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AMSV Newsletter 2015

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A Digital Low-Dropout Regulator with Coarse-Fine-Tuning and<br />

Burst-Mode Operation<br />

Mo Huang, Yan Lu, Sai-Weng Sin, Seng-Pan U, and Rui P. Martins<br />

In TCAS-II 2016<br />

[Accepted in <strong>2015</strong>]<br />

From Integrated Power research line<br />

Motivation<br />

Digital low-dropout (D-LDO) regulator, that replaces the<br />

power transistor in analog LDO regulator with a power<br />

switch array, has recently drawn significant attention for<br />

its low operation voltage and process scalability feature.<br />

However, for a conventional shift register based D-LDO,<br />

only one PMOS is turned on/off per clock cycle for the<br />

shift register operation; and the transient speed can only<br />

be improved by increasing sampling frequency which<br />

degrades the power consumption. To address this issue,<br />

a wide load range D-LDO regulator with coarse-fine tuning<br />

and burst-mode techniques is proposed for fast transient<br />

response and low quiescent current.<br />

Architecture<br />

For the proposed topology, the PMOS arrays consist of one<br />

coarse section and one fine section, driven by separate shift<br />

registers. To extend the load current range, the coarse<br />

PMOS array is designed to be with 64 power switches. The<br />

unit size of the coarse PMOS is designed to be 16 times of<br />

that of the fine PMOS for the loop gain boosting. To cover<br />

the current gap between two adjacent coarse bits can provide,<br />

the fine PMOS array is designed with 32 units for sufficient<br />

margin. Once the voltage undershoot/overshoot is<br />

detected, the coarse-tuning quickly finds out the coarse control<br />

word in which the load current should be located, with<br />

large power MOS strength and high sampling frequency for<br />

a fixed duration. Then, the fine-tuning with reduced power<br />

MOS strength and sampling frequency takes over the<br />

steady-state operation for high accuracy and current efficiency.<br />

Implementation<br />

Verification<br />

The proposed D-LDO regulator was fabricated in a 65-nm<br />

CMOS process.

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