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IPP Annual Report 2007 - Max-Planck-Institut für Plasmaphysik ...

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Since evaporation of cesium and the formation of Cs layers<br />

on metal surfaces play a key role in negative hydrogen ion<br />

sources, basic investigations on Cs behaviour in hydrogen<br />

plasmas have been started at the University in <strong>2007</strong>. To<br />

determine the thickness of a Cs layer, a specially designed<br />

quartz-crystal-microbalance is used that measures the frequency<br />

difference between two oscillating crystals. Figure 3<br />

(inlay) shows the measured correlation between Cs evaporation<br />

using a Cs dispenser at different currents and the<br />

change in frequency and thus the film thickness. In contrast<br />

to studies in high-purity conditions, the growth of Cs onto<br />

the examined surfaces (Cu, Mo, W, steel) is inhomogeneous;<br />

the cesium forms local, drop-like structures with a size of<br />

several μm. SEM pictures show that only 20-30 % of the<br />

metal is covered by those structures; consequently the measured<br />

thickness represents an effective thickness. In addition,<br />

a method for in-situ measurements of the work function<br />

using the photoelectrical effect (Fowler method) has been<br />

established. As shown in figure 3 the work function decreases<br />

with the Cs coverage of the molybdenum surface; however<br />

the work function does not fall below 2.8 eV towards the<br />

expected 2.2 eV for pure Cs.<br />

Work function [eV]<br />

4.4<br />

4.2<br />

4.0<br />

3.8<br />

3.6<br />

3.4<br />

3.2<br />

3.0<br />

2.8<br />

0.0<br />

Frequency change [Hz]<br />

600<br />

500<br />

400<br />

300<br />

200<br />

100<br />

Plasma Surface Interaction Studies<br />

0<br />

6.5A<br />

dispenser<br />

current<br />

7A 7.5A<br />

0 300 600 900 1200<br />

Dispenser on-time [s]<br />

0 10 20 30 40 50 60<br />

Effective cesium thickness [nm]<br />

Figure 3: Work function of a cesium layer on molybdenum as a function of<br />

the effective thickness. The inlay shows the thickness of the Cs layer during<br />

Cs evaporation using a dispenser.<br />

In strong collaboration with the materials research group at<br />

<strong>IPP</strong>, the ongoing work on chemical erosion of different<br />

doped carbon materials in low pressure ICP hydrogen and<br />

deuterium plasmas has now been focused on the one hand on<br />

the effect of the dopant distribution, i.e. carbide grain size<br />

and on the other hand on manufacturing and surface temperature<br />

effects on the erosion yield (released carbon particles<br />

per incident ion). Doping of carbon leads to a reduction of<br />

the effective carbon surface and thus to a reduced erosion<br />

University of Augsburg<br />

60<br />

50<br />

40<br />

30<br />

20<br />

10<br />

0<br />

Cesium thickness [nm]<br />

108<br />

yield in hydrogen plasmas. In-situ measurements of the fluence<br />

resolved erosion yield were carried out by optical<br />

emission spectroscopy (CH and C 2 band emission) in combination<br />

with weight loss measurements and RBS measurements.<br />

The incident ion flux towards the surface was measured<br />

using an energy resolved mass spectrometer in combination<br />

with a Langmuir probe. The effect of the dopant distribution<br />

was studied with amorphous carbon layers with atomically<br />

disperse distribution and different concentrations of the<br />

dopant materials (V, Ti, W). Another set of these samples<br />

was previously annealed at up to 1100 K leading to the formation<br />

of carbide grains with a size of several nm depending<br />

on dopant material and concentration. Figure 4 shows the<br />

results for vanadium doped samples with a surface temperature<br />

of 300 K and incident ion energy of 30 eV in deuterium<br />

plasmas. The solid line represents the erosion yield of undoped<br />

amorphous carbon. The yields show a strong decrease<br />

with the fluence and depend strongly on the dopant concentration.<br />

This strong reduction of the erosion yield can be<br />

explained by a surface enrichment of the dopant material<br />

which was proven by RBS measurements at the <strong>IPP</strong>. The<br />

pre-annealed samples always show significantly higher<br />

yields compared to samples without annealing; an effect<br />

which is less pronounced for titanium doped layers due to a<br />

less effective grain formation by annealing.<br />

Erosion yield G C /G ion [%]<br />

10<br />

1<br />

8.5%V<br />

Scientific Staff<br />

8.5%V<br />

pre-annealed<br />

1.5%V<br />

3.5%V<br />

Dopant: V<br />

3.5%V<br />

pre-annealed<br />

a-C<br />

1.5%V<br />

pre-annealed<br />

0.1<br />

0.0 0.5 1.0 1.5 2.0<br />

Fluence [1024 m-2 ]<br />

Figure 4: Erosion yields of vanadium doped amorphous carbon with atomically<br />

disperse dopant distribution and nm-sized carbide grains (preannealed)<br />

considering different concentrations of the dopant in ICP discharges<br />

with deuterium<br />

U. Fantz, P. Starke, S. Dietrich, S. Briefi, J. Ebad-Allah,<br />

D. Filimonov, S. König, A. Manhard, P. Schmidt.<br />

Energy scenarios group: J. Herrmann, F. Botzenhart, B. Grotz,<br />

A. Hämmerle, T. Hartmann.

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