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Deliverables and Services - IHP Microelectronics

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G A S T w I S S E N S C H A F T L E R U N d S E M I N A R E – G U E S T S C I E N T I S T S A N d S E M I N A R S<br />

Seminare / Seminars<br />

Vortragender Institution Thema<br />

Presenter Institution Topic<br />

1. prof. I. Barsony Research Institute for technical physics & “nano Functionality in Microtechno-<br />

Materials Science (MFA Budapest), Hungaria logy at MFA Budapest“<br />

2. prof. M. Gössel university of potsdam, Germany “new Methods for on-line error<br />

Recognition“<br />

3. Dr. Y. Gurbuz Sabanci university Istanbul, turkey “MeMS Integration to IC“<br />

4. pD Dr. G. Hahn university of Konstanz, Germany “Si-foils: Advantages <strong>and</strong> Challenges“<br />

5. Mr. S. Höppner technical university of Dresden, Germany “pll Design for a 60 GHz transceiver<br />

System in 90 nm CMoS technology“<br />

6. Dr. p. K. Hurley university College Cork, Irel<strong>and</strong> “electrically Active Interface Defects<br />

in the (100)Si/Sio x /Hfo 2 /tin System:<br />

origin, passivation <strong>and</strong> Impact on<br />

Device performance“<br />

7. Mr. A. Jungst<strong>and</strong> cesah GmbH Darmstadt, Germany “GAlIleo – new Applications <strong>and</strong><br />

Industrial Challenges“<br />

8. Dr. W. Koch Kosolco, Dinkelsbühl, Germany “overview of the Development of<br />

photovoltaics”<br />

9. Dr. K. Kutsukake tohoku university Sendai, Japan “Analysis of strain status in Si/SiGe<br />

Heterostructures on Various Substrates”<br />

10. prof. M. lux-Steiner Hahn-Meitner Institute Berlin, Germany “CIS Solar Cells”<br />

11. prof. H. Meixner formerly Siemens AG, Sensor & “From the piezo effect to new<br />

Actuator Systems, Germany Generation of Fuel Injectors”<br />

12. prof. o. Michler university of Applied Sciences, “Hybrid Communication networks –<br />

Dresden, Germany Challenges for Stationary <strong>and</strong> Mobile<br />

Applications in transport <strong>and</strong> traffic”<br />

13. Mr. J. Möller elMoS Semiconductor AG, Dortmund, “optimising the High Frequency noise<br />

Germany properties of SiGe:C HBts”<br />

8 A n n u A l R e p o R t 2 0 0 7

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