Deliverables and Services - IHP Microelectronics

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Industrie / Industry* Z U S A M M E N A R B E I T U N d P A R T N E R – C O L L A B O R A T I O N A N d P A R T N E R S advICo microelectronics GmbH, Germany AIXtRon AG, Germany Alcatel-lucent, Germany alpha microelectronics GmbH, Germany alpha pacific technologies Co., ltd., taiwan AMD Saxony llC & Co. KG, Germany Ap & S GmbH, Germany Applied Ceramics europe AG, lichtenstein ASM, Germany Astron, the netherlands Atmel, uK Atmel Germany GmbH, Germany Australia telescope national Facility, CSIRo, Australia BSt GmbH, Germany Centellax Inc., uSA centrotherm GmbH+Co. KG, Germany Ciclon Semiconductor Device Corp., uSA Continental temic, Germany Coreoptics GmbH, Germany Daimler AG, Germany eADS Deutschland GmbH, Germany enpirion Inc., uSA eSA / eSteC – teC-etp, the netherlands eurescom GmbH, Germany european Microsoft Innovation Center, Germany France telecom, France Gaisler Research AB, Sweden Genesys ltd., ukraine GreenWay Systeme GmbH, Germany IMSt GmbH, Germany Infineon technologies AG, Germany InnoSent GmbH, Germany Kayser-threde GmbH, Germany KMSD, lithuania lesswire AG, Germany lintec Information technologies AG, Germany Mattson thermal products, Germany MeDAV GmbH, Germany Mergeoptics GmbH, Germany Meytec GmbH, Germany Mikroelectronic Arastirma, turkey Mikron, Russia Motorola S.A.S., France neC europe ltd., uK phasor Solutions, uK philips Research laboratories Aachen, Germany philotech GmbH, Germany pHoenIX ContACt GmbH & Co. KG, Germany photronics GmbH, Germany picoQuant GmbH, Germany pReMA Semiconductor GmbH, Germany Qimonda AG, Germany Robert Bosch GmbH, Germany Rohde & Schwarz GmbH & Co. KG, Germany Schwarting Biosystem GmbH, Germany Sennheiser electronic GmbH & Co. KG, Germany Sensys Sensorik & Systemtechnologie GmbH, Germany Sick AG, Germany Siemens AG, Germany Siemens Communication, Germany Silicon Radar, Germany Siltronic AG, Germany Sitec GmbH, Germany Soitec, France StMicroelectronics n.V., the netherlands teleBItcom GmbH, Germany telefunken Radio Communication Systems GmbH und Co. KG, Germany teS electronic engineering GmbH, Germany teS electronic Solutions GmbH, Germany texas Instruments Deutschland GmbH, Germany ubidyne GmbH, Germany united Monolithic Semiconductors, France W.C. Heraeus GmbH, Germany Wisair ltd., Israel * Ausgewählte Partner / Selected partners A n n u A l R e p o R t 2 0 0 7 7
80 A n n u A l R e p o R t 2 0 0 7 Z U S A M M E N A R B E I T U N d P A R T N E R – C O L L A B O R A T I O N A N d P A R T N E R S Forschungsinstitute und Universitäten / Research Institutes and Universities* BeSSY GmbH, Germany Brandenburg technical university, Germany Brandenburg university of Applied Sciences, Germany Budapest university of technology and economics, Hungary etRI, Korea european university Viadrina of Frankfurt (oder), Germany Ferdinand-Braun-Institut für Höchstfrequenztechnik, Germany Fraunhofer IIS, Germany Fraunhofer HHI, Germany Freie universität Berlin, Germany Friedrich-Alexander-university erlangen-nuremberg, Germany Friedrich-Schiller-university Jena, Germany Georgia Institute of technology, uSA AMo GmbH Aachen, Germany GWt Dresden GmbH, Germany Hahn-Meitner Institute Berlin, Germany Humboldt university of Berlin, Germany IMeC, Belgium Indian Institute of technologies Kharagpur, India InoV, portugal Inp Greifswald e.V., Germany InRIA, France Institut für physikalische Hochtechnologie e.V., Germany Institutio de telecomunicacoes, portugal John von neumann-Institute for Computing, Germany leibniz university Hannover, Germany Max planck Institute of Microstructure physics, Germany Microelectronics Research Institute progress, Russia naMlab gGmbH, Germany national nanoFab Center, Korea national nano Device laboratories, taiwan national technical university of Athens, Greece national taiwan university, taiwan netherlands organisation for Applied Scientific Research, the netherlands ntlab, Belarus paul Drude Institute for Solid State electronics Berlin, Germany RADIolABS Rome, Italy Ruhr-university of Bochum, Germany RWtH Aachen, Germany Sabanci university Istanbul, turkey Southeast university najing, China St. petersburg State university, Russia technical university of Berlin, Germany technical university of Braunschweig, Germany technical university of Chemnitz, Germany technical university of Dresden, Germany technical university of Ilmenau, Germany technical university of Szczecin, poland technical university of ukraine, ukraine technical university of Munich, Germany technical university of Stuttgart, Germany technical university of ulm, Germany tohoku university Sendai, Japan università di Firenze, Italy università di Roma, Italy university of Applied Sciences lippe and Höxter, Germany university of Applied Sciences Wildau, Germany university of Bergen, norway university of Bristol, uK
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J A H R E S B E R I C H T 2 0 0 7 -
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Wissenschaftler des IHP sind aktiv
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I N H A L T S V E R Z E I C H N I S
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Wissenschaftlicher Beirat w I S S E
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Das Institut d A S I H P A U F E I
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Das IHP konzentriert sich auf die E
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Die Forschung zu Systemen mit gerin
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Materialien für die Mikro- und Nan
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Das Jahr 2007 Die mittelfristige Fo
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und erprobt. Rauscharme Verstärker
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Technologieplattform für drahtlose
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Materialien für die Mikro- und Nan
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7. Erhöhte Leitfähigkeit in Si-Ve
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13. IHP-Fußballturnier Vom IHP wur
Page 30 and 31: Drahtloses Internet Schnelle Ultra-
Page 32 and 33: A U S G E w ä H L T E P R O J E K
Page 34 and 35: TANDEM Abb. 4: Die Systemarchitektu
Page 36 and 37: Infrastruktur für Funktionaltest A
Page 50 and 51: Technologieplattform 130-nm-BiCMOS-
Page 52 and 53: Komplementärer LDMOS-Modul für ho
Page 54 and 55: Abb. 23: Gemessene Transferkennlini
Page 56 and 57: 2. Doppelbelichtungs-Technologie f
Page 58 and 59: Abb. 28: Ätzrate von SiGe mit 10,
Page 62 and 63: In Abb. 32 sind die wesentlichen Er
Page 64 and 65: Einkristallines Ge auf Si mittels O
Page 70 and 71: Lichtinduzierte Kristallisation von
Page 74 and 75: Gemeinsames Labor IHP / BTU Cottbus
Page 76 and 77: Allein zu den Halbleitermaterialien
Page 78 and 79: Ein weiteres, zentrales Arbeitsgebi
Page 82 and 83: Z U S A M M E N A R B E I T U N d P
Page 84 and 85: G A S T w I S S E N S C H A F T L E
Page 86 and 87: G A S T w I S S E N S C H A F T L E
Page 88 and 89: Erschienene Publikationen Published
Page 90 and 91: E R S C H I E N E N E P U B L I K A
Page 104 and 105: Eingeladene Vorträge Invited Prese
Page 106 and 107: E I N G E L A d E N E V O R T R ä
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Page 110 and 111: (12) Layer Processing for Future Pr
Page 112 and 113: (33) 60 GHz Channel Plan Proposal e
Page 114 and 115: (60) A Middleware Approach to Confi
Page 116 and 117: (83) Optimum Activation and diffusi
Page 118 and 119: (106) Creating Strained Si Overlaye
Page 120 and 121: (128) Selective Etching of SiGe by
Page 122 and 123: (9) Entwicklung eines Informationsf
Page 124 and 125: (22) Schichtstruktur mit Barium- od
Page 126 and 127: A N G E B O T E U N d L E I S T U N
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Design Kits A N G E B O T E U N d L
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A N G E B O T E U N d L E I S T U N
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Herausgeber / Publisher IHp GmbH -
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