Deliverables and Services - IHP Microelectronics

28 A n n u A l R e p o R t 2 0 0 7
A N G E B O T E U N d L E I S T U N G E N – d E L I V E R A B L E S A N d S E R V I C E S
CMOS and Passives of 0.25 µm Technologies
Parameter SG25H1 – H3 SGB25Vd
CMOS Section
Core Supply Voltage 2.5 V
nMoS V th 0.6 V
I Dsat 540 µA / µm 570 µA / µm
I off 3 pA / µm
pMoS V th - 0.56 V - 0.51 V
I Dsat 230 µA / µm 290 µA / µm
I off 3 pA / µm
Passives
MIM Capacitor 1 fF / µm 2
n + poly Resistor 210 Ω /
p + poly Resistor 280 Ω / 310 Ω /
High poly Resistor 1600 Ω / 2000 Ω /
Varactor C max / C min 3
Inductor Q@5.8 GHz (with tM2) 20 (1 nH), 15 (1.8 nH)
Inductor Q@10 GHz (with tM2) 23 (0.7 nH), 22 (1 nH)
. 0. µm SiGe BiCMOS (SG S, SG B)
Parameter
npn13P npn13V
Bipolar Section (SG13S, SG13B)
A e 0.12 x 0.48 µm 2 0.18 x 1.00 µm 2
peak f max 300 GHz 120 GHz
peak f t 250 GHz 45 GHz
BV CBo 1.7 V 4 V
BV CBo 5.5 V 16 V
β 500 450
Logic I/O
CMOS Section (SG13S) (SG13S, SG13B)
Supply Voltage 1.2 V 3.3 V
I Dsat NMOS 440 µA /µm 550 µA/µm
I Dsat PMOS 200 µA /µm 240 µA/µm
I off 50 pA /µm 1 pA/µm