Deliverables and Services - IHP Microelectronics

A N G E B O T E U N d L E I S T U N G E N – d E L I V E R A B L E S A N d S E R V I C E S
4. 0.25 µm SiGe BiCMOS with High-Voltage devices (SGB25Vd)
Parameter High Standard High
Performance Voltage
Bipolar Section
A e 0.42 x 0.84 µm 2
LdMOS Section
peak f max 95 GHz 90 GHz 70 GHz
peak f t 75 GHz 45 GHz 25 GHz
BV Ceo 2.4 V 4.0 V 7.0 V
BV CBo > 7 V > 15 V > 20 V
V A > 50 V > 80 V > 100 V
β 190 190 190
n-LdMOS 29
n-LdMOS p-LdMOS
n-LdMOS 23 n-LdMOS 13 n-LdMOS p-LdMOS 8 p-LdMOS 12
I10****
BV * DSS 31 V
26 V 15 V 11.5 V -10 V -13.5 V
I ** Dsat 101 µA / µm 140 µA / µm 140 µA / µm 175 µA / µm 85 µA / µm 90 µA / µm
(V = 1.5 V)
GS (V = 1.5 V) GS (V = 1.5 V) GS (V = 1.5 V) (V = -1.5 V) GS GS (V = -1.5 V)
GS
Ileakage < 15 pA / µm < 15 pA / µm < 15 pA / µm < 15 pA / µm < 50 pA / µm < 50 pA / µm
(V = 25 V)
DS (V = 20 V) DS (V = 10 V) DS (V = 8 V) DS (V = -8 V) DS (V = -8 V)
DS
RON 20 Ωmm 11 Ωmm 7 Ωmm 7.5 Ωmm 16 Ωmm 11.5 Ωmm
Peak f *** 32 GHz
max 40 GHz 43 GHz 46 GHz 25 GHz 22 GHz
Peak f *** 14 GHz
T 19 GHz 23 GHz 21 GHz 11 GHz 11 GHz
*:@ 00 pA / µm **:@V = V ***:@V = V (@V = 20 V for n-LDMOS 2 ) ****: substrate isolated
DS DS DS
parameters were extracted after initial drive in, i.e. after a single measurement of the DC transfer characteristic
(|V | = 0...2.5 V; V = 0...0.8*BV )
GS DS DSS
A n n u A l R e p o R t 2 0 0 7
27