IHP Annual Report 2006 - IHP Microelectronics
IHP Annual Report 2006 - IHP Microelectronics
IHP Annual Report 2006 - IHP Microelectronics
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J a h r e s b e r i c h t 2 0 0 6 – a n n u a l r e p o r t 2 0 0 6<br />
<strong>Annual</strong> <strong>Report</strong> <strong>2006</strong><br />
A n n u A l R e p o R t 2 0 0 6
prof. Dr. Wolfgang Mehr<br />
<strong>2006</strong> war für das <strong>IHP</strong> und seine Partner ein sehr erfolgreiches<br />
Jahr. Die erreichten Ergebnisse zeugen von der<br />
Fähigkeit des Institutes, durch anspruchsvolle, langfristige<br />
Forschungsarbeiten komplexe Zielstellungen<br />
zu erreichen. Ein Beispiel dafür ist die experimentelle<br />
Demonstration eines Systems für die drahtlose Kommunikation<br />
mit Datenraten bis 1 Gbps. Weitere wichtige<br />
Ergebnisse sind die erreichte Modernisierung der<br />
technologischen Ausrüstungen, der Höchstfrequenz-<br />
Messtechnik und der Design-Software für das technologische<br />
Strukturniveau 0,13 µm sowie die Weiterentwicklung<br />
der SiGe-BiCMOS-Technologie. Damit wurden<br />
die Voraussetzungen für eine weitere Erhöhung der Geschwindigkeit<br />
und Komplexität von Schaltkreisen und<br />
Systemen geschaffen.<br />
Eines der nächsten Ziele des <strong>IHP</strong> ist es, mit SiGe-Heterobipolartransistoren<br />
Lösungen für den Terahertz-Bereich<br />
zu demonstrieren. Das betrifft insbesondere Systeme<br />
mit deutlich erhöhten Datenraten und bildgebende<br />
Verfahren. Längerfristig orientiert sich das Institut<br />
darüber hinaus auf die System-Integration von Nanobauelementen<br />
mit noch höheren Arbeitsfrequenzen<br />
für Kommunikationssysteme sowie auf in Silizium integrierte<br />
Lösungen für die optische Datenübertragung.<br />
Grundlegende Arbeiten dazu werden seit mehreren Jahren<br />
im Gemeinsamen Labor mit der BTU Cottbus durchgeführt.<br />
2 A n n u A l R e p o R t 2 0 0 6<br />
V o r w o r t – F o r e w o r d<br />
<strong>2006</strong> was a very successful year for the IHp and its<br />
partners. the obtained results demonstrate the<br />
ability of the institute to achieve complex goals by<br />
performing challenging, long-term research work.<br />
Indicative of this is the experimental demonstration<br />
of a system for wireless communication with data rates<br />
up to 1 Gbps. Further important results are the<br />
realized upgrade of the technological equipment,<br />
the measuring technique for very high frequencies<br />
and the design software for the technological level<br />
of 0.13 µm as well as the progress of the SiGe BiCMoS<br />
technology development. In this way the foundations<br />
for a further increase of the speed and complexity of<br />
circuits and systems were laid.<br />
one of the next goals of the IHp is to demonstrate<br />
solutions for the tHz range using SiGe heterobipolar<br />
transistors. this development will apply in particular<br />
to systems with considerably increased data rates and<br />
to imaging systems. In the longer term the institute<br />
additionally orientates itself towards the system integration<br />
of nanoscale devices operating at still higher<br />
frequencies for communication systems as well as<br />
towards integrated silicon solutions for optical data<br />
communication. Fundamental work on this topic has<br />
been accomplished for several years in the Joint lab<br />
with the Btu Cottbus.
Die Forschungskooperationen des <strong>IHP</strong> haben sich kontinuierlich<br />
weiterentwickelt, wovon unter anderem die<br />
deutliche Erhöhung der eingeworbenen Drittmittel<br />
im Jahr <strong>2006</strong> zeugt. Der vom <strong>IHP</strong> angebotene Multi-<br />
Projekt-Wafer-Service wird weltweit durch eine steigende<br />
Zahl von Universitäten und Forschungseinrichtungen<br />
genutzt.<br />
Durch Mitarbeiter des <strong>IHP</strong> wurde die Firma „Silicon Radar“<br />
ausgegründet, die 2007 ihre operative Tätigkeit<br />
auf dem Gebiet siliziumbasierter Schaltkreise im GHz-<br />
Bereich aufnehmen wird.<br />
In Frankfurt (Oder) etablierten sich im Jahr <strong>2006</strong> drei<br />
Solarfabriken. Das <strong>IHP</strong> ist mit diesen Firmen und weiteren<br />
wissenschaftlichen Einrichtungen in einem Netzwerk<br />
zur Vorbereitung gemeinsamer Forschungs- und<br />
Ausbildungsprojekte aktiv.<br />
Der Belegschaft des <strong>IHP</strong> möchten wir an dieser Stelle<br />
für ihre sehr engagierte Arbeit danken. Der Brandenburgischen<br />
Landesregierung und der Bundesregierung<br />
gilt unser Dank für die außerordentliche Unterstützung<br />
unserer Forschungsarbeiten.<br />
Wolfgang Mehr Manfred Stöcker<br />
Wiss.-Techn. Geschäftsführer Adm. Geschäftsführer<br />
V o r w o r t – F o r e w o r d<br />
the research cooperation of the IHp has developed<br />
continuously, as is demonstrated by the significant<br />
increase of acquired third party funding in the year<br />
<strong>2006</strong>. the multi-project wafer service offered by the<br />
IHp is used throughout the world by an increasing<br />
number of universities and research institutions.<br />
the spin-off company “Silicon Radar” was founded<br />
by scientists of the IHp and will start its operational<br />
work in the area of silicon-based GHz circuits in<br />
2007.<br />
three solar factories were established in Frankfurt<br />
(oder) in <strong>2006</strong>. the IHp is working actively with these<br />
companies and other scientific institutions in a network<br />
for the preparation of joint projects for research<br />
and education in this context.<br />
At this point we would like to thank the IHp staff for<br />
their dedicated work. We are also grateful to the regional<br />
government of Brandenburg and the federal<br />
government for the extraordinary support of our research<br />
activities.<br />
A n n u A l R e p o R t 2 0 0 6
A n n u A l R e p o R t 2 0 0 6<br />
i n h a l t s V e r Z e i c h n i s – c o n t e n t s<br />
Contents
i n h a l t – c o n t e n t s<br />
Vorwort<br />
Aufsichtsrat<br />
Wissenschaftlicher Beirat<br />
Das <strong>IHP</strong> auf einen Blick<br />
Forschung des <strong>IHP</strong><br />
Das Jahr <strong>2006</strong><br />
Ausgewählte Projekte<br />
Gemeinsame Labore<br />
Konferenzen und Workshops<br />
Zusammenarbeit und Partner<br />
Gastwissenschaftler und Seminare<br />
Publikationen<br />
Angebote und Leistungen<br />
Wegbeschreibung zum <strong>IHP</strong><br />
2<br />
6<br />
7<br />
8<br />
0<br />
26<br />
66<br />
72<br />
76<br />
80<br />
8<br />
72<br />
80<br />
Foreword<br />
Supervisory Board<br />
Scientific Advisory Board<br />
IHp in a nutshell<br />
IHp‘s Research<br />
update <strong>2006</strong><br />
Selected projects<br />
Joint labs<br />
Conferences and Workshops<br />
Collaboration and partners<br />
Guest Scientists and Seminars<br />
publications<br />
Deliverables and Services<br />
Directions to IHp<br />
A n n u A l R e p o R t 2 0 0 6
Aufsichtsrat<br />
Konstanze Pistor<br />
Vorsitzende<br />
Ministerium für Wissenschaft, Forschung und Kultur<br />
Land Brandenburg<br />
MinR Thomas Sondermann<br />
Stellvertretender Vorsitzender (bis 01. Nov. <strong>2006</strong>)<br />
Bundesministerium für Bildung und Forschung<br />
Dr. Volkmar Dietz<br />
Stellvertretender Vorsitzender (seit 01. Nov. <strong>2006</strong>)<br />
Bundesministerium für Bildung und Forschung<br />
Dr.-Ing. Peter Draheim<br />
Silicon Manufacturing Itzehoe SMI GmbH<br />
Prof. Dr. Helmut Gabriel<br />
Freie Universität Berlin<br />
Dr. Eckhard Grass<br />
<strong>IHP</strong> GmbH<br />
Norbert Quinkert<br />
Motorola GmbH, Taunusstein<br />
Dr. Harald Richter<br />
<strong>IHP</strong> GmbH<br />
Prof. Dr. Ernst Sigmund<br />
Brandenburgische Technische Universität Cottbus<br />
MinR Gerhard Wittmer<br />
Ministerium der Finanzen<br />
Land Brandenburg<br />
6 A n n u A l R e p o R t 2 0 0 6<br />
a u F s i c h t s r a t – s u p e r V i s o r y b o a r d<br />
supervisory board<br />
Konstanze pistor<br />
Chair<br />
Ministry of Science, Research and Culture<br />
State of Brandenburg<br />
Minr thomas sondermann<br />
Deputy Chair (until november 1, <strong>2006</strong>)<br />
Federal Ministry of education and Research<br />
dr. Volkmar dietz<br />
Deputy Chair (since november 1, <strong>2006</strong>)<br />
Federal Ministry of education and Research<br />
dr.-ing. peter draheim<br />
Silicon Manufacturing Itzehoe SMI GmbH<br />
prof. helmut Gabriel<br />
Freie universität Berlin<br />
dr. eckhard Grass<br />
IHp GmbH<br />
norbert Quinkert<br />
Motorola GmbH, taunusstein<br />
dr. harald richter<br />
IHp GmbH<br />
prof. ernst sigmund<br />
Brandenburg technical university, Cottbus<br />
Minr Gerhard wittmer<br />
Ministry of Finance<br />
State of Brandenburg
Wissenschaftlicher Beirat<br />
w i s s e n s c h a F t l i c h e r b e i r a t – s c i e n t i F i c a d V i s o r y b o a r d<br />
Prof. Dr. Hermann G. Grimmeiss<br />
Vorsitzender<br />
Department of Solid State Physics<br />
University of Lund, Schweden<br />
Dr. Jürgen Arndt<br />
Stellvertretender Vorsitzender<br />
ATMEL Germany GmbH, Heilbronn<br />
Prof. Dr. Ignaz Eisele<br />
Fakultät für Elektrotechnik und<br />
Informationstechnik<br />
Universität der Bundeswehr München<br />
Prof. Dr. Christian Enz<br />
CSEM SA, Neuchatel, Schweiz<br />
Prof. Dr. Michael Hoffmann<br />
Institut für Mikrowellentechnik<br />
Universität Ulm<br />
Prof. Dr. Ulrich Rohde<br />
Synergy Microwave Corporation, USA<br />
Dr. Josef Winnerl<br />
Infineon Technologies AG, München<br />
Leitung<br />
Prof. Dr. Wolfgang Mehr<br />
Wissenschaftlich-Technischer Geschäftsführer<br />
Manfred Stöcker<br />
Administrativer Geschäftsführer<br />
scientific advisory board<br />
prof. hermann G. Grimmeiss<br />
Chair<br />
Department of Solid State physics<br />
university of lund, Sweden<br />
dr. Jürgen arndt<br />
Deputy<br />
AtMel Germany GmbH, Heilbronn<br />
prof. ignaz eisele<br />
Department of electrical engineering and<br />
Information technology<br />
university of the Bundeswehr Munich<br />
prof. christian enz<br />
CSeM SA, neuchatel, Switzerland<br />
prof. Michael hoffmann<br />
Institute of Microwave techniques<br />
university of ulm<br />
prof. ulrich rohde<br />
Synergy Microwave Corporation, uSA<br />
dr. Josef winnerl<br />
Infineon technologies AG, Munich<br />
Management<br />
prof. wolfgang Mehr<br />
Director<br />
Manfred stöcker<br />
Administrative Director<br />
A n n u A l R e p o R t 2 0 0 6<br />
7
8 A n n u A l R e p o R t 2 0 0 6<br />
d a s i h p a u F e i n e n b l i c K – i h p i n a n u t s h e l l<br />
<strong>IHP</strong> in a Nutshell
Das Institut<br />
d a s i h p a u F e i n e n b l i c K – i h p i n a n u t s h e l l<br />
- Gegründet 1983; 1991 Neugründung aus einem<br />
früheren Akademieinstitut mit langjähriger<br />
Erfahrung in der Mikroelektronik auf Silizium-<br />
Basis<br />
- 210 Mitarbeiter aus 16 Ländern<br />
- Mitglied der Leibniz-Gemeinschaft<br />
aufgabe<br />
- Wirkung als Europäisches Forschungs- und<br />
Innovationszentrum für drahtlose Kommunikationstechnologien<br />
- Stärkung der Wettbewerbsfähigkeit der deutschen<br />
und europäischen Mikroelektronik- und Kommunikationsforschung<br />
- Erhöhung der Attraktivität der Region als<br />
Hochtechnologiestandort<br />
strategie<br />
- Konzentration auf drahtlose und Breitbandkommunikation<br />
- Erarbeitung zukunftsorientierter Technologien,<br />
Schaltkreise und Systeme bis zu Prototypen<br />
- Wertschöpfung durch Innovation<br />
Infrastruktur<br />
- Vollständige Innovations-Kette vom Material<br />
bis zu Systemen, einschließlich Pilotlinie mit<br />
0,25 (0,13) µm-BiCMOS-Technologien<br />
Kompetenzen<br />
- Systeme für die drahtlose Kommunikation<br />
- HF-Schaltkreisentwurf<br />
- Erweiterung von Silizium-CMOS-Technologien<br />
für neue Funktionen<br />
- Materialien für die Mikro- und Nanoelektronik<br />
the institute<br />
- Founded in 1983; re-established in 1991 as a<br />
successor institution to the former institute of<br />
the east German Academy with extensive<br />
experience in silicon microelectronics<br />
- 210 employees from 16 countries<br />
- Member of the leibniz Association<br />
Mission<br />
- to act as a european Research and Innovation<br />
Center for wireless communication<br />
technologies<br />
- to strengthen the competitive position of the<br />
German and european microelectronic and<br />
communication research<br />
- to enhance the attractiveness of the region<br />
as a location for high technology<br />
strategy<br />
- to focus on solutions for wireless and broadband<br />
communications<br />
- Development of future-oriented technologies,<br />
circuits and systems up to prototypes<br />
- to create value through innovation<br />
Facilities<br />
- Complete innovation chain from materials to<br />
systems, including a pilot line with<br />
0.25 (0.13) µm BiCMoS technologies<br />
competencies<br />
- Systems for wireless communication<br />
- RF circuit design<br />
- extension of silicon CMoS technologies for new<br />
functionalities<br />
- Materials for micro- and nanoelectronics<br />
A n n u A l R e p o R t 2 0 0 6
0 A n n u A l R e p o R t 2 0 0 6<br />
F o r s c h u n G d e s i h p – i h p ‘ s r e s e a r c h<br />
<strong>IHP</strong>‘s Research
Das <strong>IHP</strong> arbeitet an den folgenden drei eng miteinander<br />
verbundenen Forschungsprogrammen:<br />
1. Drahtloses Internet: Systeme und Anwendungen,<br />
2. Technologieplattform für drahtlose und<br />
Breitbandkommunikation,<br />
3. Materialien für die Mikro- und Nanoelektronik.<br />
Gemeinsames Ziel ist die Schaffung innovativer Lösungen<br />
für Anwendungen in den Bereichen drahtlose<br />
und Breitbandkommunikation.<br />
Die Forschungsprogramme nutzen die besonderen<br />
Möglichkeiten des <strong>IHP</strong>. So verfügt das <strong>IHP</strong> über eine<br />
Pilotlinie für technologische Forschungen und Entwicklungen.<br />
Eine weitere Besonderheit ist das vertikale<br />
Forschungskonzept des <strong>IHP</strong> unter Nutzung der<br />
zusammenhängenden und aufeinander abgestimmten<br />
Kompetenzen des Instituts auf den Gebieten Systementwicklung,<br />
Schaltungsentwurf, Technologie und Materialforschung.<br />
Die Forschung des <strong>IHP</strong> setzt auf die typischen Stärken<br />
eines Leibniz-Instituts: Sie ist charakterisiert durch eine<br />
langfristige, komplexe Arbeit, die Grundlagenforschung<br />
mit anwendungsorientierter Forschung verbindet.<br />
Die Realisierung der Forschungsprogramme erfolgt<br />
mit Hilfe eines regelmäßig aktualisierten Portfolios<br />
von Projekten. Die Aktualisierung geschieht aufgrund<br />
inhaltlicher Erfordernisse sowie der Möglichkeiten für<br />
Kooperationen und Finanzierung. Drittmittelprojekte<br />
werden im Einklang mit den strategischen Zielen des<br />
<strong>IHP</strong> eingeworben.<br />
Im Folgenden werden wesentliche Zielstellungen der<br />
Forschungsprogramme des <strong>IHP</strong> beschrieben.<br />
Drahtloses Internet: Systeme und Anwendungen<br />
In diesem Programm werden komplexe Systeme für<br />
die drahtlose Kommunikation in Form von Prototypen<br />
und Anwendungen untersucht und entwickelt. Ziel sind<br />
Hardware / Software-Systemlösungen auf hochintegrierten<br />
Single-Chips. Der vertikale Forschungsansatz<br />
zeigt sich auch in der Architektur der erarbeiteten Systeme.<br />
Im Wesentlichen wird die Wechselwirkung zwischen<br />
verschiedenen Schichten optimiert und eine vertikale<br />
Migration semantischer Elemente realisiert.<br />
Die drei Hauptforschungsrichtungen sind Systeme mit<br />
hoher Performance, Systeme mit geringem Energiever-<br />
F o r s c h u n G d e s i h p – i h p ‘ s r e s e a r c h<br />
IHp is working on the following three closely connected<br />
research programs:<br />
1. Wireless Internet: Systems and Applications,<br />
2. technology platform for Wireless and<br />
Broadband Communication,<br />
3. Materials for Micro- and nanoelectronics.<br />
the joint objective is the creation of innovative solutions<br />
for wireless and broadband applications.<br />
the research programs make use of the special opportunities<br />
provided by the IHp. In this way the institute<br />
has a pilot line for research and technological developments.<br />
An additional feature is the IHp vertical<br />
research concept employing the associated and harmonized<br />
competencies of the institute in the fields of<br />
system development, circuit design, technology and<br />
materials research.<br />
the research of the IHp is based on the typical<br />
strengths of a leibniz Institute; it is dominated by<br />
long-term, complex efforts which connect basic research<br />
with application-oriented research.<br />
the realization of the research programs is accomplished<br />
through a project portfolio which is regularly<br />
updated according to the content requirements as<br />
well as through opportunities for cooperations and<br />
outside funding. Grant projects are acquired in accordance<br />
with the strategic goals of IHp.<br />
Significant goals of IHp’s research programs are specified<br />
below.<br />
wireless internet: systems and applications<br />
this program investigates and develops complex systems<br />
for wireless communication as prototypes and<br />
applications with the objective to find solutions for<br />
Hardware / Software systems on highly integrated<br />
single chips. the vertical research approach is also<br />
reflected in the architecture of the addressed systems.<br />
Basically inter-layer interaction is optimized<br />
and a vertical migration of semantic elements is performed.<br />
the three major directions of research are systems<br />
with high performance, systems with low power con-<br />
A n n u A l R e p o R t 2 0 0 6
auch und Middleware für kontextabhängige drahtlose<br />
Internetanwendungen.<br />
Für drahtlose Systeme mit hoher Performance ist es das<br />
Ziel, alle Funktionen eines drahtlosen PDA auf einem Chip<br />
zu integrieren. Dabei sollen Datenraten bis über 2 Gbps<br />
bei Trägerfrequenzen bis zu 60 GHz erreicht werden.<br />
Weiterführende Arbeiten hin zu Datenraten bis 100 Gbps<br />
werden im Grundlagenbereich dieses Forschungsprogramms<br />
vorbereitet.<br />
Die Forschung zu Systemen mit geringem Energieverbrauch<br />
hat zum Ziel, Sensornetze auf Basis hochintegrierter<br />
Chips zu realisieren. Typische Anwendungen dafür<br />
sind Body-Area-Netze für medizinische Anwendungen<br />
oder im Wellness-Bereich. In diesem Zusammenhang<br />
werden neue Netzarchitekturen, verteilte, ressorcenarme<br />
Middlewareansätze, neue energieeffiziente Medienzugriffsprotokolle<br />
sowie energieeffiziente Transceiver erforscht<br />
und realisiert. UWB-Transceiver sind für Anwendungen<br />
im Nahbereich und Anwendungen mit hohen<br />
Ortsauflösungseigenschaften besonders geeignet.<br />
Die Forschung zu kontextabhängigen Middleware-Systemen<br />
betrifft insbesondere auch die Erhaltung der<br />
Privatsphäre und die Sicherheit bei der Nutzung mobiler<br />
Endgeräte. Darüber hinaus wird die symmetrische bzw.<br />
asymmetrische Verteilung von Ressourcen zwischen Endgeräten<br />
und Servern im Gesamtsystem untersucht.<br />
Technologieplattform für drahtlose und<br />
Breitbandkommunikation<br />
In diesem Programm werden Technologien (insbesondere<br />
BiCMOS-Technologien) mit zusätzlichen Funktionen<br />
durch die modulare Erweiterung industrieller CMOS-<br />
Technologien entwickelt. Die Schwerpunkte in diesem<br />
Programm sind Technologien mit hoher Performance,<br />
kostengünstige Technologien für System-on-Chip, sowie<br />
die Sicherung des Zugriffs interner und externer Designer<br />
auf die Technologien des <strong>IHP</strong>.<br />
Die Forschung in Richtung Technologien hoher Performance<br />
zielt auf extrem schnelle SiGe HBTs, einschließlich komplementärer<br />
Bauelemente und neuer Bauelementekonzepte<br />
für Anwendungen bei Frequenzen bis > 100 GHz.<br />
Zielstellung der Forschung für kostengünstige Technologien<br />
ist es, BiCMOS-Technologien mit ausreichender<br />
Performance und geringen Fertigungskosten zu entwickeln<br />
sowie darin zusätzliche Module wie HF-LDMOS,<br />
2 A n n u A l R e p o R t 2 0 0 6<br />
F o r s c h u n G d e s i h p – i h p ‘ s r e s e a r c h<br />
sumption and middleware for context sensitive wireless<br />
internet applications.<br />
the goal for high-performance wireless systems is to<br />
integrate all functionalities of a wireless pDA on a<br />
single chip. the targets are to achieve a data rate exceeding<br />
2 Gbps at carrier frequencies of up to 60 GHz.<br />
Continuing activities towards data rates up to 100 Gbps<br />
will be made in the basic area of this research program.<br />
the research on systems with low energy consumption<br />
is directed towards sensor networks based on highly<br />
integrated chips. typical applications are body-area<br />
networks for health care or wellness. In this context<br />
new network architectures, distributed low resource<br />
middleware concepts, new energy efficient protocols<br />
for medium access as well as energy efficient transceivers<br />
are investigated and realised. uWB transceivers<br />
are particularly well suited for short range<br />
applications and applications requiring high spatial<br />
resolution.<br />
Research in context-sensitive middleware systems<br />
addresses especially privacy and security questions<br />
in using mobile devices. Moreover the symmetrical<br />
and asymmetrical resource distribution between client<br />
and server parts of the overall system is investigated.<br />
technology platform for wireless and<br />
broadband communication<br />
the goal of this program is to develop value-added<br />
technologies, preferably BiCMoS technologies, by<br />
the modular extension of industrial CMoS. the focal<br />
points in this program are technologies with a high<br />
performance, low-cost technologies for system-onchip,<br />
and the provision of technology access for internal<br />
and external designers.<br />
the research towards high-performance technologies<br />
targets ultrafast SiGe HBts, including complementary<br />
devices and new device concepts for applications at<br />
frequencies of up to > 100 GHz.<br />
the aim of the research for low-cost technologies is<br />
to develop BiCMoS technologies with ample performance<br />
and low manufacturing costs and to integrate<br />
additional modules such as RF lDMoS, Flash and passive<br />
devices.
Flash und passive Bauelemente zu integrieren.<br />
Die 0,25-µm-BiCMOS-Technologien des <strong>IHP</strong> sind europa-<br />
und weltweit für Designer nutzbar. Ein Zeitplan für die<br />
entsprechenden technologischen Durchläufe in der Pilotlinie<br />
in Frankfurt (Oder) ist über die Internetadresse<br />
des <strong>IHP</strong> verfügbar. Eine neue 0,13-µm-BiCMOS-Technologie<br />
wird entwickelt.<br />
Materialien für die Mikro- und Nanoelektronik<br />
Die Materialforschung am <strong>IHP</strong> hat die Integration neuer Materialien<br />
in gegenwärtige und zukünftige Technologien zum<br />
Ziel, um so verbesserte, zusätzliche oder neuartige Funktionalitäten<br />
zu erreichen. Darüber hinaus werden Grundlagen<br />
für neue Forschungsgebiete am <strong>IHP</strong> geschaffen.<br />
Gegenstand der Arbeiten sind neue Hoch-k-Dielektrika<br />
sowie die Erforschung neuer Prinzipien für Hochleistungs-<br />
Schaltkreise unter Nutzung von Nanostrukturen bzw. optischer<br />
Datenübertragung. An den letztgenannten Zielen<br />
wird in einem gemeinsamen Labor mit der BTU Cottbus<br />
gearbeitet.<br />
Aktuelle Schwerpunkte der Arbeiten zu neuen Hoch-k-Dielektrika<br />
sind praseodymhaltige ternäre Legierungen für<br />
zukünftige Anwendungen in MIM-Kondensatoren, Speichern<br />
und Transistoren sowie als Epitaxievermittler für<br />
hochwertige heteroepitaktische Halbleiterschichten (SIS-<br />
Schichtstapel). Weiterhin werden neue Materialien für<br />
SAW-Filter und NVM-Speicher bewertet.<br />
Gegenstand der Arbeiten im Gemeinsamen Labor mit der<br />
BTU Cottbus ist die Si-Materialforschung. Dabei sollen die<br />
Eigenschaften des Si-Materials maßgeschneidert werden,<br />
um neue Anwendungen zu ermöglichen und um bestehende<br />
Anwendungen zu verbessern.<br />
Schwerpunkte sind die grundlagenorientierte Vorlaufforschung<br />
zu Si-basierten Lichtemittern für die optische Datenübertragung,<br />
zum Defect Engineering für zukünftige<br />
Si-Wafer sowie für eine selbstorganisierte Anlagerung von<br />
Biomolekülen an der Si-Oberfläche, zum Bandstrukturdesign<br />
und Ladungsträgertransport in Si-basierten Quantenstrukturen<br />
und zur Beherrschung der elektrischen Eigenschaften<br />
von Kristalldefekten in Solar-Si.<br />
F o r s c h u n G d e s i h p – i h p ‘ s r e s e a r c h<br />
IHp’s 0.25 µm BiCMoS technologies are available<br />
in europe and throughout the world for designers.<br />
A schedule for technological runs in<br />
the pilot line in Frankfurt (oder) is available<br />
via IHp`s internet address. A new 0.13 µm SiGe<br />
BiCMoS technology is under development.<br />
Materials for Micro- and nanoelectronics<br />
Materials research at IHp targets the integration of<br />
new materials into the technology to achieve additional,<br />
better or innovative functionalities. It also<br />
gears towards the preparation of new research fields<br />
at the institute.<br />
Subject of the research are new high-k dielectrics<br />
and the research of new concepts for high-performance<br />
circuits using nanostructures or optical data<br />
transmission. the latter work is done at the Joint lab<br />
IHp / Btu Cottbus.<br />
Current focal points of the activities with high-k<br />
dielectrics are ternary alloys with praseodymium for<br />
future applications in MIM capacitors, memories and<br />
transistors as well as for epitaxy mediation for high<br />
quality epitactical semiconductor layers (silicon-<br />
insulator-silicon stacks). Additionally, new materials<br />
for SAW filters and non-volatile memories are evaluated.<br />
Silicon materials research is the subject matter of the<br />
Joint lab IHp / Btu. Silicon properties are tailored<br />
to enable new applications and to improve existing<br />
ones.<br />
Focuses are initial basic research for Si-based light<br />
emitters for optical data transmission, defect engineering<br />
for future silicon wafers, self organized adsorption<br />
of biomolecules on the silicon surface, band<br />
structure design and charge carrier transport in Sibased<br />
quantum structures, and the control of electrical<br />
properties of crystal defects in solar silicon.<br />
A n n u A l R e p o R t 2 0 0 6
A n n u A l R e p o R t 2 0 0 6<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
Update <strong>2006</strong>
Das Jahr <strong>2006</strong><br />
Im Jahr <strong>2006</strong> gab es zahlreiche Initiativen zur weiteren<br />
Vernetzung der Forschung des <strong>IHP</strong> und zur Vorbereitung<br />
neuer Forschungsprojekte.<br />
Wissenschaftler des <strong>IHP</strong> waren tätig als Initiatoren, Organisatoren<br />
oder Vortragende wissenschaftlicher Konferenzen<br />
und Workshops auf allen Forschungsgebieten<br />
des <strong>IHP</strong>. Beispiele für maßgeblich durch <strong>IHP</strong>-Mitarbeiter<br />
organisierte internationale Veranstaltungen sind<br />
drei Symposien beim E-MRS Spring Meeting in Nizza<br />
(Symposium A „Current Trends in Nanoscience“, Symposium<br />
L „Characterisation of High-k Dielectric Materials“<br />
und Symposium V „Advanced Silicon for the 21 th<br />
Century“), die internationale Konferenz „Extended<br />
Defects in Semiconductors“ in Halle, der Workshop<br />
„SiGe:C HBT: Device Technology and Applications“ bei<br />
der European Microwave Week in Manchester sowie der<br />
Workshop „From Research to Innovation“ in Szczecin.<br />
<strong>IHP</strong>-Mitarbeiter waren beteiligt bei der Organisation<br />
des „Workshops on Dielectrics in <strong>Microelectronics</strong>“<br />
(WoDiM) in Catania, eines Symposiums „Silicon Materials<br />
Science and Technology“ in Denver und eines Symposiums<br />
„SiGe: Materials, Processing and Devices“ in<br />
Cancun.<br />
In Frankfurt (Oder) wurden durch das <strong>IHP</strong> mehrere internationale<br />
Veranstaltungen organisiert, so ein Workshop<br />
mit dem National NanoFab Center (NNFC) Korea,<br />
das Symposium „Halbleiter und Nanostrukturen“, der<br />
5. Workshop zu „High-Performance SiGe BiCMOS for<br />
Wireless and Broadband Communication“ mit anschließendem<br />
Tutorial zu „<strong>IHP</strong> Design Kits“ sowie der internationale<br />
Sommerstudiengang Mikroelektronik mit<br />
Studenten aus Osteuropa.<br />
Die Kooperationen des <strong>IHP</strong> mit regionalen Universitäten<br />
und Fachhochschulen konnten weiter ausgebaut<br />
werden. Die Forschungsarbeiten des Gemeinsamen Labors<br />
mit der BTU Cottbus fanden internationale Anerkennung.<br />
Sie sind ein wichtiger Bestandteil der langfristigen<br />
Vorlaufforschung des <strong>IHP</strong>. Ein gemeinsames<br />
Forschungs- und Ausbildungszentrum des <strong>IHP</strong> und der<br />
TFH Wildau wurde eröffnet. Mit der TU Berlin wurde ein<br />
Kooperationsvertrag unterzeichnet. Das <strong>IHP</strong> bewarb<br />
sich zusammen mit der TU Berlin und weiteren Berliner<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
update <strong>2006</strong><br />
the year <strong>2006</strong> produced numerous initiatives for the<br />
further networking of the institute’s research and for<br />
the preparation of new research projects.<br />
Scientists of the IHp were active as initiators, organizers<br />
or speakers at scientific conferences and workshops<br />
on all major spheres of IHp’s activities. examples<br />
of international meetings significantly organized<br />
by IHp staff are three symposia at the e-MRS Spring<br />
Meeting in nice (symposium A “Current trends in nanoscience”,<br />
symposium l “Characterisation of High-k<br />
Dielectric Materials” and symposium V “Advanced Silicon<br />
for the 21th Century”), the international conference<br />
“extended Defects in Semiconductors“ in<br />
Halle, the workshop “SiGe:C HBt: Device technology<br />
and Applications” at the european Microwave Week in<br />
Manchester as well as the workshop “From Research<br />
to Innovation“ in Szczecin.<br />
IHp co-workers were actively involved in the organization<br />
of the “Workshops on Dielectrics in <strong>Microelectronics</strong>”<br />
(WoDiM) in Catania, a symposium “Silicon<br />
Materials Science and technology” in Denver and a<br />
symposium “SiGe: Materials, processing and Devices”<br />
in Cancun.<br />
Several international meetings in Frankfurt (oder)<br />
were organized by the IHp, such as a workshop with<br />
the national nanoFab Center (nnFC) Korea, the symposium<br />
“Semiconductors and nanostructures”, the<br />
5th workshop “High performance SiGe BiCMoS for<br />
Wireless and Broadband Communication” followed by<br />
a tutorial about “IHp Design Kits” as well as the “International<br />
Summer School on <strong>Microelectronics</strong>” with<br />
students from eastern europe.<br />
Cooperations of the IHp with regional universities<br />
and universities of applied sciences were further developed.<br />
Research at the Joint lab with the Btu Cottbus<br />
gained international recognition. they are an essential<br />
part of the long-term research at the IHp.<br />
the common research and education centre of the<br />
IHp and the university of Applied Sciences Wildau<br />
(tFHW) was inaugurated in February. this Joint lab<br />
unites important competencies in research and education<br />
of both partners. A cooperation contract<br />
A n n u A l R e p o R t 2 0 0 6
Forschungseinrichtungen als Exzellenzcluster „Human-<br />
Centric Communication“. Die Europa-Universität Viadrina<br />
und das <strong>IHP</strong> bieten ihr Know-how den Unternehmen<br />
der Region an. Dazu wurde im Juli <strong>2006</strong> das gemeinsame<br />
Transferzentrum Ostbrandenburg gegründet.<br />
Die internationale Kooperation des Institutes konnte<br />
im Jahr <strong>2006</strong> weiter ausgebaut werden. Das dokumentiert<br />
sich unter anderem in den neuen Kooperationsvereinbarungen<br />
mit der Tohoku Universität Sendai in Japan,<br />
mit der TU Szczecin, MOUs mit dem NNFC und dem<br />
ETRI in Korea sowie in dem Beginn der Zusammenarbeit<br />
mit der National-Taiwan-University in Taipeh.<br />
Die Designerin Li Wang wurde <strong>2006</strong> auf zwei IEEE-Konferenzen<br />
mit einem „Best Paper Award“ ausgezeichnet.<br />
Sie erhielt die Ehrungen für einen Micromixer für 77 GHz<br />
Radar (International Microwave Symposium, San Francisco)<br />
und für einen Frequenzteiler (6 th Topical Meeting<br />
on Silicon Monolithic Integrated Circuits in RF Systems,<br />
San Diego). Der Mitarbeiter des Gemeinsamen Labors<br />
mit der BTU Cottbus, Tzanimir Arguirov, erhielt für seine<br />
Präsentation den „Young Scientist Award“ eines EMRS-<br />
Symposiums in Nizza.<br />
Durch ein hochrangiges Gutachtergremium des BMBF<br />
wurde im Rahmen des Programms InnoProfile das<br />
<strong>IHP</strong>-Projekt „TANDEM“ ausgewählt, in dem extrem<br />
verbrauchsarme Funksysteme für sensorische Anwendungen<br />
entwickelt werden.<br />
6 A n n u A l R e p o R t 2 0 0 6<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
with the Humboldt university of Berlin was signed.<br />
together with the technical university of Berlin and<br />
other Berlin research institutions the IHp applied<br />
for becoming a cluster of excellence “Human Centric<br />
Communication”. the european university Viadrina<br />
and the IHp jointly offer their know-how to regional<br />
companies. For this purpose the “transfer Center east<br />
Brandenburg” was founded in July <strong>2006</strong>.<br />
the international cooperation of the institute was further<br />
developed in <strong>2006</strong>. this is documented amongst<br />
others by new cooperation agreements with the tohoku<br />
university Sendai in Japan, with the Szczecin university<br />
of technology, by Mous with the nnFC and the<br />
etRI in Korea as well as by the beginning of cooperation<br />
with the national taiwan university in taipeh.<br />
the RF designer li Wang was presented with the “Best<br />
paper Award” at two Ieee-conferences in <strong>2006</strong>. She<br />
received the awards for a 77 GHz radar micromixer<br />
(International Microwave Symposium, San Francisco)<br />
and for a frequency divider (6th topical Meeting on<br />
Silicon Monolithic Integrated Circuits in RF Systems,<br />
San Diego). the scientist of the Joint lab IHp / Btu<br />
Cottbus,tzanimir Arguirov, received the “Young Scientist<br />
Award“ for his presentation of an eMRS-symposium<br />
in nice.<br />
In the framework of the BMBF program Innoprofile<br />
the IHp-project tAnDeM was selected by a high-ranking<br />
referee team. tAnDeM will develop radio systems<br />
for sensor applications with very low power consumption.
Wissenschaftliche Ergebnisse<br />
Drahtloses Internet: Systeme und Anwendungen<br />
Die Ergebnisse dieses Forschungsprogramms wurden<br />
insbesondere durch die Abteilungen System Design und<br />
Circuit Design unter Nutzung der Ergebnisse anderer<br />
Abteilungen erarbeitet. Schwerpunkte sind Si-basierte<br />
Schaltungen und Systeme mit extrem hohen Leistungsparametern<br />
als Schlüssel für neue Anwendungsfelder.<br />
Beispiele für Ergebnisse im Jahr <strong>2006</strong> sind:<br />
1. Integrierte Lösungen für Systeme zur drahtlosen<br />
Kommunikation mit sehr hohen Datenraten<br />
Die Schaltkreise für 60-GHz-Receiver und -Transmitter<br />
wurden optimiert. Im Juni <strong>2006</strong> wurde mit sehr<br />
großem Erfolg ein vollständiges 60-GHz-Übertragungssystem<br />
realisiert und auf dem Statusseminar<br />
des BMBF in Erlangen demonstriert. Sowohl die 60-<br />
GHz-Schaltungen als auch die 5-GHz-Schaltungen<br />
für die Zwischenfrequenz-Bearbeitungen arbeiteten<br />
wie spezifiziert. Das Basisband wurde vollständig<br />
realisiert und auf FPGA-Boards mit dem HF-Frontend<br />
integriert. Datenraten bis zu 780 Mbps konnten<br />
übertragen werden. Damit positioniert sich das<br />
<strong>IHP</strong> gleichauf mit IBM im internationalen Vergleich<br />
von drahtloser Gigabit-Kommunikation bei 60 GHz.<br />
Zusätzlich wurde ein Vorschlag des <strong>IHP</strong> zur Standardisierung<br />
bei der TG 15.3c der IEEE 802 Initiative<br />
eingereicht. Hier gibt es inzwischen eine enge Kooperation<br />
mit France Telecom und anderen großen<br />
Firmen.<br />
2. Radarsensoren bei 24 GHz und bei 77 GHz<br />
Nach erfolgreichen Arbeiten zu Radarsensoren bei 24<br />
GHz wurde im August <strong>2006</strong> die Firma „Silicon Radar“<br />
aus dem <strong>IHP</strong> ausgegründet. Die Firma wird in Kooperation<br />
mit einem Industriepartner eine finale Version<br />
für die Fertigung von spannungsgesteuerten Oszilatoren<br />
(VCOs) für kommerzielle Radarmodule sowie<br />
LNAs und Mischer erarbeiten. Am <strong>IHP</strong> wird in einem<br />
Projekt an grundlegenden Lösungen für ein Single-<br />
Chip Radar-Frontend bei 24 GHz gearbeitet.<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
scientific results<br />
wireless internet: systems and applications<br />
the results of this research program were obtained<br />
in particular by the departments System Design and<br />
Circuit Design using also the results from other departments.<br />
emphasis here is on circuits and systems<br />
with extremely high performance parameters as keys<br />
for new application fields.<br />
examples of results in <strong>2006</strong> are:<br />
1. Integrated solutions for wireless communication<br />
systems with very high data rates<br />
the 60 GHz receiver and transmitter circuits were<br />
optimized. In June <strong>2006</strong> a complete data transmission<br />
system for 60 GHz was very successfully<br />
realized and presented at the BMBF status seminar<br />
in erlangen. Both the circuits at 60 GHz and<br />
at 5 GHz for the intermediate frequency worked as<br />
specified. the base band was completely realized<br />
and integrated on FpGA boards together with the<br />
RF frontend. Data rates up to 780 Mbps could be<br />
transferred. thus the IHp positions itself on the<br />
same level with IBM in wireless Gigabit communication<br />
at 60 GHz. In addition, IHp submitted a<br />
suggestion for the standardisation to tG 15.3c of<br />
the Ieee 802 initiative. In the meantime a close<br />
collaboration with France telecom and other big<br />
companies was established.<br />
2. Radar sensors at 24 GHz and at 77 GHz<br />
After successful work on radar detectors at 24 GHz<br />
the IHp spin-off “Silicon Radar” was founded in<br />
August <strong>2006</strong>. In cooperation with an industrial<br />
partner the company will develop a final version<br />
for the manufacturing of voltage-controlled oscillators<br />
(VCos) for commercial radar modules as well<br />
as lnAs and mixers. At the IHp a project is under<br />
way on fundamental solutions for a single chip radar<br />
frontend at 24 GHz.<br />
A n n u A l R e p o R t 2 0 0 6<br />
7
Die 77-GHz-Komponenten für das FMCW-Radar wurden<br />
weiter optimiert. Ein Breitband-VCO mit hoher<br />
Ausgangsleistung konnte realisiert werden.<br />
3. Schnelle A / D- und D / A-Umsetzer<br />
In einem internen Projekt wurde ein schneller A / D-<br />
Wandler mit 12 GSps und 4 Bit Auflösung (3,2 ENOB)<br />
realisiert. Ein Drittmittelprojekt zur Realisierung von<br />
A / D- und D / A-Wandlern für Ultra-Breitband-Funksysteme<br />
konnte eingeworben werden. Als wichtige<br />
Komponenten für schnelle A / D-Wandler wurden ein<br />
Komparator mit 20 GHz Taktrate, 4 mV Auflösung und<br />
40 mW Verlustleistung sowie ein schneller Track-And-<br />
Hold-Verstärker mit 10 GSps, 7,8 Bit (ENOB) Auflösung<br />
realisiert und bei der ESSCIRC präsentiert.<br />
4. Single-Chip PLL-Frequenzsynthesizer<br />
Zwei Projekte zur Realisierung von kostengünstigen<br />
vollintegrierten Frequenzsynthesizern bei 10 und<br />
19 GHz für die breitbandige Satellitenkommunikation<br />
wurden in Zusammenarbeit mit der ESA begonnen.<br />
In diesem Rahmen wurden als kritischste<br />
Bauelemente zwei VCOs mit hervorragenden Phasenrauschwerten<br />
sowie ein kompletter Frequenzsynthesizer<br />
in SiGe BiCMOS mit Fractional-N PLL<br />
und Delta-Sigma-Modulator realisiert. Die Funktionalität<br />
konnte mit zwei Einzelchips (CMOS und<br />
BiCMOS) gezeigt werden. Die Realisierung eines<br />
Single-Chip Synthesizers wird folgen.<br />
Zudem wurden theoretische Untersuchungen zum<br />
Phasenrauschen in Fractional-N PLLs durchgeführt,<br />
sowie ein Simulationswerkzeug in Matlab<br />
implementiert, um die anspruchsvollen Phasenrauschanforderungen<br />
erreichen zu können.<br />
8 A n n u A l R e p o R t 2 0 0 6<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
the 77 GHz components for the FMCW radar were<br />
further optimized. A broadband VCo with high<br />
output power was realized.<br />
3. Fast A / D- and D / A-converters<br />
A fast A / D-converter with 12 GSps and 4 bit resolution<br />
(3.2 enoB) was realised in an internal project.<br />
A third-party funded project for the development<br />
of A / D- and D / A-converters for uWB radio<br />
systems was acquired. As important components<br />
for fast A / D-converters a comparator with 20 GHz<br />
clock rate, 4 mV resolution and 40 mW power dissipation<br />
as well as a fast track-and-hold amplifier<br />
with 10 GSps, 7.8 bits (enoB) resolution was realized<br />
and presented at the conference eSSCIRC.<br />
4. Single chip pll frequency synthesizer<br />
In collaboration with the european Space Agency<br />
(eSA) two projects were started for the realization<br />
of cost-effective fully integrated frequency synthesizers<br />
at 10 GHz and 19 GHz. As most critical<br />
devices also two VCos with excellent phase noise<br />
as well as a complete frequency synthesizer with<br />
fractional-n pll and Delta-Sigma-Modulator were<br />
realized in SiGe BiCMoS. the functionality was<br />
demonstrated with two single chips (CMoS and<br />
BiCMoS). the next step will be a single chip synthesizer.<br />
Additionally, theoretical investigations concerning<br />
the phase noise in fractional-n plls were<br />
performed. A simulation tool was implemented<br />
in MAtlAB to fulfil the challenging phase noise<br />
requirements.
5. Integriertes Wireless-Bus-System für medizinische<br />
Anwendungen<br />
Die Arbeiten fanden im Rahmen des Projektes BA-<br />
SUMA statt. Die Knotenarchitektur des Body-Area-<br />
Netzes wurde realisiert und erfolgreich getestet. Das<br />
generische, ereignisgesteuerte Betriebssystem RE-<br />
FLEX wurde portiert und zusammen mit einer innovativen<br />
SDL-Laufzeitumgebung integriert. Dadurch<br />
werden die Entwicklungszeiten für MAC- und Netzwerkprotokolle<br />
deutlich verkürzt. Das IEEE802.15.3<br />
MAC-Protokoll wurde auf dieser Plattform realisiert<br />
und zusammen mit einem MAC-Hardwarebeschleuniger<br />
integriert.<br />
Ausgehend von diesen Ergebnissen wurden verschiedene<br />
weiterführende Projekte zu Sensornetzwerken<br />
initiiert. So wurde zu diesem Thema das Projekt<br />
„TANDEM“ im Rahmen der InnoProfile-Ausschreibung<br />
des BMBF mit einer Förderung von 3 Mio. Euro<br />
eingeworben.<br />
6. Ultra-Wide-Band Schaltkreise<br />
Das EU-Projekt „PULSERS 2“ (Nachfolger des Projektes<br />
PULSERS) begann am 1. Januar <strong>2006</strong>. Innerhalb<br />
dieses Projektes wurden Arbeiten zum Systemkonzept<br />
durchgeführt. Zusätzlich wurden in einem<br />
internen <strong>IHP</strong>-Projekt verschiedene Komponenten<br />
für ein impulsbasiertes UWB-Frontend entwickelt<br />
und Ergebnisse auf internationalen Konferenzen<br />
publiziert.<br />
7. Modulare Prozessor-Bibliothek<br />
Der LEON-Prozessor ermöglicht in seiner strahlungssicheren<br />
Variante die Anwendung der Sensorknoten<br />
des <strong>IHP</strong> im Weltraum. Dazu wird eine eigene Bibliothek<br />
entwickelt und es werden schaltungstechnische<br />
Varianten untersucht. Das <strong>IHP</strong> hat einen LEON-3 FT<br />
Prozessor realisiert, der nach den Vorgaben der ESA<br />
als strahlungsfest eingesetzt werden kann. Ziel dieser<br />
Arbeiten ist es, das <strong>IHP</strong> als einen zugelassenen<br />
Komponentenlieferanten der ESA zu etablieren. Mit<br />
den schnellen SiGe-Technologien des <strong>IHP</strong> ist sowohl<br />
eine hervorragende Hochfrequenz-Performance als<br />
auch eine hohe Integration erreichbar.<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
5. Integrated wireless bus system for medical<br />
applications<br />
the research was performed in the framework of<br />
the project BASuMA. the node architecture of the<br />
body-area-network was realized and successfully<br />
tested. the generic, event-controlled operating<br />
system ReFleX was ported and integrated together<br />
with an innovative SDl cycle time environment.<br />
In this manner, the development periods<br />
for MAC and network protocols are significantly<br />
shortened. the Ieee 802.15.3 MAC protocol was<br />
realized on this platform and integrated together<br />
with the MAC hardware accelerator.<br />
Based on these results, new projects on sensor<br />
networks were initiated. As an example, the project<br />
tAnDeM in the framework of the BMBF initiative<br />
Innoprofile was won with euro 3 million<br />
funding.<br />
6. ultra-wideband circuits<br />
the european project pulSeRS 2 (successor of the<br />
project pulSeRS) started January 1, <strong>2006</strong>. In this<br />
project a system concept was drafted. Additionally,<br />
various components for an impulse-based uWB<br />
frontend were developed in an IHp-project and<br />
published at international conferences.<br />
7. Modular processor library<br />
the radiation hard version of the leon processor<br />
enables the use of IHp’s sensor nodes in outer<br />
space. For this purpose a new library is under development<br />
and special circuit versions are tested.<br />
the IHp has developed a leon-3 Ft processor for<br />
radiation hard applications according to the eSA<br />
requirements. the intention of this work is the establishment<br />
of the IHp as a listed component supplier<br />
for the eSA. IHp’s high frequency SiGe technologies<br />
allow for an excellent RF performance as<br />
well as for a high level of integration.<br />
A n n u A l R e p o R t 2 0 0 6
8. Spezifische Lösungen bei 5 GHz<br />
Die Arbeiten im EU-Projekt WINDECT wurden erfolgreich<br />
beendet. Das Ergebnis ist ein neuartiger<br />
MAC-Prozessor, der als weltweit erster Prozessor die<br />
HCCA Mode der 802.11e Spezifikation erfüllt. Der<br />
HCCA Mode dient im Wesentlichen der Unterstützung<br />
einer garantierten Übertragungsqualität in<br />
drahtlosen Netzen. Die Ergebnisse sind notwendige<br />
Voraussetzung für das Projekt HOMEPLANE, ein im<br />
BMWi Wettbewerb NGM eingeworbenes Projekt zu<br />
drahtlosen Heimnetzen. Dieses Projekt liefert auch<br />
die Basis für die Arbeiten des <strong>IHP</strong> im Bereich der<br />
Car-2-Car Kommunikation, die in zukünftigen Fahrzeugen<br />
die Verkehrssicherheit erhöhen soll.<br />
9. Ein neues Konzept für Kryptoprozessoren<br />
Im Bereich der kontextsensitiven drahtlosen Internetanwendungen<br />
wurden Erfolge bei Kryptoprozessoren<br />
erzielt. Die Prozessoren des <strong>IHP</strong> unterstützen<br />
durch den neuartigen modularen Aufbau verschiedene<br />
elliptische Kurven und unterschiedliche AES<br />
Sicherheitsstufen. Zusätzlich konnte der Datendurchsatz<br />
gesteigert werden. Zum Thema Kryptoprozessoren<br />
wurden zahlreiche Masterarbeiten geschrieben,<br />
von denen eine als beste Masterarbeit<br />
der Fakultät 1 der BTU Cottbus ausgezeichnet wurde.<br />
Zwei Patente wurden im Rahmen dieser Arbeit<br />
angemeldet.<br />
Technologieplattform für drahtlose und Breitbandkommunikation<br />
Im Jahr <strong>2006</strong> wurde sowohl an der Sicherung der Stabilität<br />
der existierenden 0,25-µm-BiCMOS-Technologien<br />
und in ausgewählten Punkten an deren Weiterentwicklung<br />
als auch an einem neuen 0,13-µm-BiCMOS-<br />
Prozess gearbeitet. Die 0,13-µm-Technologie dient<br />
der Erforschung neuer Bauelemente-, Schaltungs- und<br />
Systemkonzepte und soll zusätzlich zu den 0,25-µm-<br />
Technologien im MPW- und Prototyping Service des <strong>IHP</strong><br />
angeboten werden.<br />
20 A n n u A l R e p o R t 2 0 0 6<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
8. Specific wireless solutions at 5 GHz<br />
the eu-project WInDeCt was finished successfully.<br />
the result of the project is the first MAC processor<br />
worldwide that realizes the HCCA mode of the<br />
802.11e specification. the HCCA mode basically<br />
supports a data transmission with guaranteed<br />
quality of service in wireless networks. these results<br />
are a necessary prerequisite for HoMeplAne,<br />
a project on wireless home networking, won in the<br />
competition nGI of the BMWi. the WInDeCt results<br />
are also the basis for IHp’s activities in the<br />
area of car-2-car communication, which will increase<br />
the traffic safety for future cars.<br />
9. A new concept for crypto processors<br />
Successes were achieved with crypto processors<br />
for wireless internet applications. With their novel<br />
modular setup the processors developed at the<br />
IHp support different elliptic curves and different<br />
AeS security levels. Additionally the throughput<br />
was increased. numerous master theses were<br />
written about crypto processors, with one of them<br />
awarded as the best of the faculty 1 of the Btu<br />
Cottbus. IHp applied for two crypto processor patents.<br />
technology platform for wireless and broadband<br />
communication<br />
In <strong>2006</strong> there were activities both on the stability<br />
of the existing 0.25 µm BiCMoS technologies and on<br />
selected topics for their development as well as for a<br />
new 0.13 µm BiCMoS process. the 0.13 µm technology<br />
is necessary for studying new concepts for devices,<br />
circuits and systems. In addition to the 0.25<br />
µm technologies it will be offered in the MpW and<br />
prototyping Service of the IHp.
Beispiele für Ergebnisse <strong>2006</strong> sind:<br />
1. Weiterentwicklung der 0,25-µm- und Entwicklung<br />
der 0,13-µm-BiCMOS-Technologie<br />
Für eine komplementäre BiCMOS-Technologie wurde<br />
ein neues Bipolar-Integrationskonzept entwickelt,<br />
das speziell auf niedrige Prozesskosten abzielt.<br />
Mit dem neuen Kozept können drei npn-HBTs mit<br />
f T / BV CEO -Werten von 40 GHz / 5 V , 63 GHz / 3,5 V , und<br />
120 GHz / 2,1 V zusammen mit einem 32 GHz / 4,4 V<br />
pnp SiGe HBT mit nur drei zusätzlichen Maskenschritten<br />
im Vergleich zum unterliegenden CMOS-<br />
Prozess hergestellt werden. Diese Ergebnisse wurden<br />
im Dezember <strong>2006</strong> auf der IEDM in San Francisco<br />
vorgestellt.<br />
Es konnten deutliche Fortschritte bei der Entwicklung<br />
der 0,13-µm-SiGe-BiCMOS-Technologie erzielt<br />
werden. So wurde der Prozess der Maskendatengenerierung<br />
für 0,13-µm-Masken etabliert und erfolgreich<br />
mit der Erstellung des ersten vollständigen<br />
Maskensatzes demonstriert. Im Juli wurden die Silizium-Wafer<br />
für die Erstellung der MOS-Spicemodelle<br />
fertig gestellt und die Daten für die Entwicklung der<br />
0,13-µm-Bibliothek geliefert. Erste funktionierende<br />
Testchips (4 Mbit SRAM) demonstrieren die Richtigkeit<br />
des Technologiekonzeptes. Die Entwicklung der<br />
Technologiemodule ist zum großen Teil abgeschlossen.<br />
An einzelnen Modulen sind noch Optimierungsarbeiten<br />
notwendig (z.B. Trenchfill, Metallisierung).<br />
Für die zwei Technologievarianten SG13B<br />
(High Performance HBT mit minimalem CMOS) und<br />
SG13S (vollständige 0,13-µm-BiCMOS) ist „Early<br />
Access“ für Ende 2007 vorgesehen.<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
examples of results in <strong>2006</strong> are:<br />
1. Further development of the 0.25 µm and develop-<br />
ment of the 0.13 µm BiCMoS technology<br />
A new low-cost, bipolar integration concept for a<br />
complementary 0.25 µm BiCMoS technology was<br />
developed. three npn HBts with f t / BV Ceo values of<br />
40 GHz / 5 V, 63 GHz / 3.5 V and 120 GHz / 2.1 V<br />
together with a 32 GHz / 4.4 V pnp HBt can be fabricated<br />
with only three mask steps in addition to<br />
the underlying CMoS core process. In December<br />
<strong>2006</strong> these results were presented at the IeDM in<br />
San Francisco.<br />
Considerable progress was made in the development<br />
of the 0.13 µm SiGe BiCMoS technology. the<br />
process of generating mask data for the 0.13 µm<br />
level was developed and successfully demonstrated<br />
by realizing a first complete mask set. In July<br />
the silicon wafer for the extraction of the spice<br />
models were completed and the data for the development<br />
of the 0.13 µm library were delivered.<br />
First working 4 Mbit SRAM test chips proved the<br />
technology concept. the development of the<br />
technology modules is close to completion. Some<br />
modules such as trench fill and metallization<br />
still need optimisation. early access for the two<br />
technology versions SG13B (high performance<br />
HBts with minimum CMoS) and SG13S (complete<br />
0.13 µm BiCMoS) is planned for the end of 2007.<br />
A n n u A l R e p o R t 2 0 0 6<br />
2
2. Flash Speicher<br />
Die Technologie für integrierte Flash Speicher konnte<br />
stabilisiert und weiter optimiert werden. Um<br />
weitere Verbesserungen der Parameter (z.B. Read<br />
Access) des 65 kB Stacked-Gate Flash-Speichers zu<br />
erreichen, wurde eine zusätzliche Design-Iteration<br />
durchgeführt und es konnte eine Lesezugriffszeit<br />
von 50 ns demonstriert werden. Für die Speicher<br />
auf Basis der Single-Poly-Zellen (Speichertechnologie<br />
für eine besonders kostengünstige Integration<br />
kleiner Speicher) sind erste IP-Speicherbausteine<br />
entworfen und erfolgreich getestet worden: ein 1kBit-Flash-Speicher<br />
und ein 8 Bit nichtflüchtiges<br />
Register. Zuverlässigkeitsuntersuchungen für beide<br />
Technologievarianten werden 2007 durchgeführt<br />
und abgeschlossen. Der Leiter des Projektes,<br />
Alexander Fox, konnte die Ergebnisse in seiner Promotionsarbeit<br />
mit Auszeichnung verteidigen.<br />
3. Neue LDMOS<br />
Durch ein neues Bauelementekonzept mit verändertem<br />
Driftgebiet konnte die Zuverlässigkeit der<br />
LDMOS-Transistoren entscheidend verbessert werden.<br />
Dieses Konzept ist die Basis für die Integration<br />
in die 0,13-µm-BiCMOS-Technologie.<br />
4. Weltweite Nutzung der <strong>IHP</strong>-Technologien durch<br />
MPW & Prototyping Service<br />
Die regelmäßigen Technologie-Shuttles am <strong>IHP</strong><br />
ermöglichen auch Hochschulen, Forschungseinrichtungen<br />
und Industriepartnern die Präparation<br />
innovativer Entwicklungsmuster und Prototypen.<br />
Durch Verbesserung der Infrastruktur konnte die<br />
Betreuung der Partnerprojekte und deren Zugriff auf<br />
wichtige Informationen weiter qualifiziert werden.<br />
Durch Einführung einer neuen Software gelang es,<br />
die Generierung der Maskendaten zu verbessern und<br />
Fehlerquellen zu reduzieren. <strong>2006</strong> konnten die erzielten<br />
Drittmitteleinnahmen erhöht werden. Eine<br />
wesentliche Ursache für das sehr gute Ergebnis ist<br />
die Attraktivität der angebotenen BiCMOS-Technologien.<br />
22 A n n u A l R e p o R t 2 0 0 6<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
2. Flash memory<br />
the technology for integrated flash memory was<br />
stabilized and further optimized. Additional design<br />
iteration was made to improve the parameters<br />
(e.g. read access) of the 65 kB stacked gate<br />
flash memory. A read access time of 50 ns was demonstrated.<br />
First Ip memory blocks (a 1 kbit flash<br />
memory and an 8 bit non-volatile register) were<br />
designed and tested successfully for the memories<br />
based on single poly cells, which is a technology<br />
for the cost-effective integration of small memories.<br />
Reliability tests for both technology versions<br />
will be made and completed in 2007. the project<br />
leader, Alexander Fox, defended the results of his<br />
graduation work with honour.<br />
3. new lDMoS devices<br />
the reliability of the lDMoS transistors was improved<br />
essentially by a new device concept with<br />
a changed drift area. the lDMoS integration into<br />
the 0.13 µm BiCMoS technology will be based on<br />
this concept.<br />
4. Worldwide use of the IHp technologies by the<br />
MpW and prototyping Service<br />
the regular IHp technology shuttles also allow<br />
universities, research institutions and industrial<br />
partners to prepare innovative development samples<br />
and prototypes. the support of partner projects<br />
and their access to important information<br />
was further qualified by an improved infrastructure.<br />
the generation of mask data was improved<br />
and the sources of error were reduced by using<br />
new software. the third-party income was increased<br />
in <strong>2006</strong>. the major reason for this excellent<br />
result is the attractiveness of the BiCMoS technologies<br />
offered.
5. Projekt KOKON<br />
In diesem BMBF-Verbundprojekt testen deutsche<br />
Automobilhersteller und die Halbleiterindustrie<br />
gemeinsam die Integration und Zuverlässigkeit von<br />
Silizium-Millimeterwellen-Schaltkreisen (MMIC) für<br />
die Anwendung als Radar-Sende / Empfangseinheit<br />
(Anti-Kollisions-Radar, Nahbereichs-Radar) im Frequenzbereich<br />
76 - 81 GHz. Wesentlich ist dabei die<br />
Entwicklung von VCOs (Oszillatoren) mit Leistungsverstärkern<br />
in SiGe-Technologien. Zusätzlich zu den<br />
ursprünglich geplanten Aufgaben wurden von der<br />
Universität Ulm designte VCOs mit <strong>IHP</strong>-Technologie<br />
gefertigt.<br />
Materialien für die Mikro- und Nanoelektronik<br />
Ein Schwerpunkt der Materialforschung waren Hoch-k-<br />
Dielektrika auf Basis von Praseodym und deren spezifische<br />
Anwendungen. Am gemeinsamen Labor mit der<br />
BTU Cottbus wurde auf neuen Gebieten wie Si-basierte<br />
Quantenbauelemente und Lichtemitter gearbeitet.<br />
Beispiele für Ergebnisse <strong>2006</strong> sind:<br />
1. Globale Heteroepitaxie edler Schichten<br />
Struktur, Defekte und die dielektrischen Eigenschaften<br />
des kubischen Pr 2 O 3 (111) / Si(111)-Heteroepitaxie-Systems<br />
wurden untersucht und bewertet.<br />
Es konnte weiter gezeigt werden, dass auf<br />
diesem System beim Vorhandensein vorteilhafter<br />
Defektenergien ein einkristallines heteroepitaktisches<br />
Schichtwachstum sowohl von Si(111) als<br />
auch von Ge(111) mit besserer Qualität möglich<br />
ist als auf dem Si(001)-Substrat. Dieser Effekt<br />
kann durch eine geeignete Wärmebehandlung des<br />
Schichtstapels noch verstärkt werden. Die Epitaxiebedingungen<br />
für Si(111) auf Pr 2 O 3 (111) lassen<br />
sich weiter dadurch verbessern, indem durch eine zusätzliche<br />
dünne Y 2 O 3 -Schicht zwischen Pr 2 O 3 (111)<br />
und Si(111) die Bildung eines amorphen Silikats<br />
verhindert wird.<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
5. project KoKon<br />
In this BMBF funded cooperation project German<br />
automobile producers and the semiconductor industry<br />
are jointly testing the integration and reliability<br />
of Si-millimeter-wave integrated circuits<br />
(MMIC) for application as radar transmitter / receiver<br />
units (anti-collision-radar, short-range-radar)<br />
in the frequency range 76 - 81 GHz. In this<br />
context the development of VCos (voltage controlled<br />
oscillators) with power amplifiers in SiGe<br />
technologies is essential. In addition to the originally<br />
planned tasks, VCos were designed by the<br />
university of ulm in IHp technology.<br />
Materials for Micro- and nanoelectronics<br />
the main focus of the materials research was High-k-<br />
Isolators on the basis of praseodymium and specific applications<br />
for them. At the Joint lab IHp / Btu Cottbus<br />
the research focus was on new areas such as integrated<br />
silicon-based quantum devices and light emitters.<br />
examples of results in <strong>2006</strong> are:<br />
1. Global hetero-epitaxy of functional layers<br />
Structure, defects and dielectric properties of the<br />
cubic pr 2 o 3 (111) / Si(111)-hetero-epitaxial system<br />
were investigated and evaluated. It was demonstrated<br />
that in presence of advantageous defect<br />
energies a single crystalline hetero-epitaxial<br />
layer growth of Si(111) as well as of Ge(111) is<br />
possilble with a higher quality than on an Si(001)<br />
substrate. this effect can be enhanced by a suitable<br />
heat treatment of the layer stack. the conditions<br />
for epitaxy of Si(111) on pr 2 o 3 (111) can be<br />
improved further by preventing the growth of an<br />
amorphous silicate using an additional Y 2 o 3 -layer<br />
between pr 2 o 3 (111) and Si(111).<br />
A n n u A l R e p o R t 2 0 0 6<br />
2
2. PrAlO 3 auf TiN-beschichteten Si(001)-Wafern<br />
Die Untersuchungen an diesen Schichtstapeln<br />
wurden im Hinblick auf den Einfluss von Defekten<br />
auf das Leckstromverhalten in Speicherbauelementen<br />
der nächsten Generation durchgeführt.<br />
Wechselwirkungen zwischen dem Substrat und der<br />
dielektrischen Schicht sowie Oberflächenkontaminationen<br />
sind maßgebend für die Entstehung von<br />
Defekten. Infolge chemischer Reaktionen an der<br />
Interface ist ein defektkontrollierter Anstieg des<br />
Leckstromes durch die Schicht mit wachsender Temperatur<br />
zu beobachten.<br />
3. Hoch-k-MIM-Kondensatoren<br />
Der Einsatz von Hoch-k-Materialien in MIM-Kondensatoren<br />
für Analoganwendungen dient der Flächenreduzierung<br />
und erfordert eine ausreichende<br />
Kapazitäts-Spannungs-Unabhängigkeit. Auf der<br />
Grundlage eines physikalischen Modells für die<br />
Spannungsabhängigkeit der Kapazität ist es möglich,<br />
kritische Schichtdicken für dielektrische Materialien<br />
zu bestimmen, für die die quadratische<br />
Spannungsabhängigkeit einen akzeptablen Grenzwert<br />
nicht überschreitet. Bei Kenntnis der kritischen<br />
Schichtdicken ist auch die Berechnung der maximalen<br />
Kapazitätsdichten möglich. Planare MIM-Kondensatoren<br />
mit HfO 2 als Dielekrikum weisen eine<br />
dreifach höhere Kapazitätsdichte als SiO 2 -basierte<br />
MIM-Kondensatoren bei vergleichbarer Spannungslinearität<br />
auf.<br />
4. Silizium-basierte Lichtemitter<br />
Direktes Silizium-Waferbonden (realisiert in Zusammenarbeit<br />
mit dem MPI für Mikrostrukturphysik<br />
Halle) erlaubt die reproduzierbare Erzeugung von<br />
regelmäßigen Versetzungsnetzwerken. Dabei kann<br />
für eine bestimmte Fehlorientierung ein Netzwerk<br />
erzeugt werden, bei dem die D1-Linie dominiert.<br />
Das ist die erforderliche Wellenlänge des Emitters<br />
von 1,5 µm (Vortrag des <strong>IHP</strong> auf der IEDM 2005).<br />
2 A n n u A l R e p o R t 2 0 0 6<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
2. prAlo 3 on tin-coated Si(001) wafers<br />
the research on these layer stacks was performed<br />
in view of the influence of defects on the leakage<br />
current in next generation memories. Interactions<br />
between the substrate and the dielectric layer as<br />
well as surface contaminations determine the defect<br />
generation. As a result of chemical reactions<br />
at the interface a defect-controlled increase of<br />
the leakage current with higher temperature is<br />
observed.<br />
3. High-k MIM capacitances<br />
the use of high-k materials in MIM capacitances<br />
for analog applications serves the reduction of silicon<br />
area and requires a sufficient independence<br />
of the capacitance from the applied voltage. Based<br />
on a physical model for the voltage dependence<br />
of the capacitance, critical thicknesses for<br />
dielectric layers can be determined for which the<br />
quadratic voltage dependence of the capacitance<br />
remains below a critical value. If the critical layer<br />
thicknesses are known, the maximum area capacitance<br />
can be calculated. planar MIM capacitances<br />
with Hfo 2 -dielectric have a three times higher<br />
area capacitance compared to Sio 2 -based ones,<br />
with comparable voltage linearity.<br />
4. Silicon-based light emitters<br />
Direct bonding of silicon wafers (realised together<br />
with the MpI for Microstructure physics in Halle)<br />
enables the reproducible formation of dislocation<br />
networks. In this process a network can be formed<br />
with light emission dominated by the D1-line for a<br />
defined misorientation. this is the required emitter<br />
wavelength of 1.5 µm (IHp’s IeDM-presentation<br />
in 2005).
Im Jahr <strong>2006</strong> wurde dieses Konzept erstmals für<br />
eine MOS-LED genutzt, bei der sich das Versetzungsnetzwerk<br />
ca. 45 nm unterhalb des etwa 1,8 nm dicken<br />
Tunneloxides befindet. Dieses Ergebnis wurde<br />
in einem gemeinsamen Vortrag (<strong>IHP</strong> und MPI Halle)<br />
auf der IEDM <strong>2006</strong> mit Erfolg präsentiert.<br />
5. Silizium-basierte Nanostrukturen<br />
Begonnen wurde mit Arbeiten zu Silizium-Nanodrähten<br />
für die Mikroelektronik (in Kooperation<br />
mit der Zhejiang Universität, China) sowie zu<br />
Schichtstapeln aus dünnen Silizium-Schichten, die<br />
in dünne Silizium-Oxid-Schichten eingebettet sind,<br />
für die Photovoltaik der 3. Generation (in Zusammenarbeit<br />
mit der RWTH Aachen).<br />
Die Schichtstapel mit den dünnen Silizium-Schichten<br />
lassen ein Bandgap-Engineering zu. Ab ca. 5 nm<br />
Schichtdicke nimmt mit sinkender Dicke des Siliziums<br />
die Breite der Energie-Bandlücke deutlich zu.<br />
Dieser Effekt soll in Tandemstrukturen mit variierter<br />
Bandlücke für zukünftige Si-basierte Höchsteffizienz-Solarzellen<br />
ausgenutzt werden.<br />
6. Silizium für die Mikroelektronik<br />
Auf diesem Arbeitsgebiet wurde in Kooperation<br />
mit der deutschen Industrie gearbeitet, um deren<br />
Wettbewerbsposition zu stärken. In der Zusammenarbeit<br />
mit der Siltronic AG für zukünftige Si-Wafer<br />
wurden u.a. experimentelle und theoretische Arbeiten<br />
zur Sauerstoffpräzipitation durchgeführt. Für<br />
die Centrotherm GmbH + Co. KG wurde der Einfluss<br />
der Hochtemperatur-Prozessierung auf die Vergleitung<br />
in horizontal und vertikal gelagerten Si-<br />
Wafern großen Durchmessers untersucht und eine<br />
sehr gute Übereinstimmung mit Modellrechnungen<br />
gefunden.<br />
d a s J a h r 2 0 0 6 – u p d a t e 2 0 0 6<br />
In <strong>2006</strong> this concept was applied for a MoS-leD for<br />
the first time. In this device the dislocation network<br />
is about 45 nm below the tunnel oxide with a<br />
thickness of about 1.8 nm. this achievement was<br />
successfully presented in a joint presentation of<br />
IHp and the MpI Halle at the <strong>2006</strong> IeDM.<br />
5. Silicon-based nano-structures<br />
In cooperation with the Zhejiang university in<br />
China we have started research on silicon nanowires<br />
for microelectronics. We have also started<br />
working together with the RWtH Aachen on stacks<br />
of thin silicon layers embedded in thin layers of<br />
silicon oxide, for application in third generation<br />
photovoltaics.<br />
using stacks of thin silicon layers allows Bandgap<br />
engineering. Beginning at about 5 nm, the energy<br />
of the band gap significantly rises with decreasing<br />
layer thickness. this effect can be utilized in<br />
tandem structures with varying band gap for future<br />
solar cells of high efficiency.<br />
6. Silicon for microelectronics<br />
In this area we collaborated with the German industry<br />
in order to strengthen their competitive<br />
position. In cooperation with the Siltronic AG for<br />
future silicon wafers we performed e.g. experimental<br />
and theoretical work on the precipitation<br />
of oxygen. For Centrotherm GmbH & Co. KG the<br />
influence of high-temperature processing for gliding<br />
processes in horizontal and vertical wafers of<br />
high diameters was investigated. A very good correlation<br />
with model calculations was found.<br />
A n n u A l R e p o R t 2 0 0 6<br />
2
26 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Selected Projects
Drahtloses Internet<br />
WIGWAM - Wireless Gigabit with Advanced<br />
Multimedia Support<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Ziel des <strong>IHP</strong>-Beitrages dieses vom BMBF geförderten<br />
Projektes war es, ein Höchstgeschwindigkeits-Kommunikationssystem<br />
mit Datenraten von 1 Gbps zu entwerfen<br />
und prototypisch zu implementieren. Um den ständig<br />
wachsenden Bedarf an Datenrate zu befriedigen,<br />
gewinnt das 60-GHz-Band zunehmend an Bedeutung.<br />
Viele Firmen und Forschungseinrichtungen beschäftigen<br />
sich daher mit entsprechenden Systemen und<br />
Schaltungen.<br />
Die wesentlichen Beiträge des <strong>IHP</strong> am WIGWAM Projekt<br />
sind prototypische Realisierung eines kompletten 60-<br />
GHz-Kommunikationssystems, mit den Basiskomponenten<br />
analog Frontend (AFE), Basisbandprozessor (BB)<br />
und Medium Access Control Prozessor (MAC).<br />
Die 60-GHz-Sender- und Empfänger-Chips konvertieren<br />
das übertragene Signal auf eine Zwischenfrequenz von<br />
5 GHz. Ein lokaler Oszillator mit geringem Phasenrauschen<br />
ist für die OFDM Übertragung notwendig. Sowohl<br />
für den Sender als auch für den Empfänger werden eine<br />
56-GHz-PLL verwendet. Nach dem Hochmischen des Sig-<br />
nals wird eine Pufferstufe mit großer Verstärkung eingesetzt.<br />
Um die Gefahr des Schwingens zu verringern,<br />
wurde dafür ein differentielles Design verwendet. Der<br />
60-GHz-Sender wurde in einen Chip integriert, wie in<br />
Abb. 1 ersichtlich. Dieser enthält drei wesentliche Blöcke:<br />
die 56-GHz-PLL, einen Mischer sowie einen 60-GHz-<br />
Ausgangspuffer. Der Mischer beruht auf einer Gilbert<br />
Topologie. Für den zweistufigen Ausgangpuffer kam<br />
eine Kaskode-Topologie zum Einsatz, die eine Verstärkung<br />
von 20 dB erreicht und eine bessere Linearität<br />
als eine Common-Emitter-Schaltung aufweist. Zwei<br />
Leiterplatten für Sender und Empfänger wurden entworfen.<br />
Diese bestehen aus dem, im Vergleich zu Keramiksubstraten,<br />
kostengünstigen Rogers 3003 Material.<br />
Die nackten Chips wurden auf das Substrat in einer<br />
Silicon-on-Board Technologie (SOB) montiert. Zur Verbindung<br />
kommen kurze Bonddrähte zum Einsatz. Abb.<br />
2 zeigt die Empfänger-Platine. Der Sender wurde auf<br />
die gleiche Weise hergestellt. Teure und komplizierte<br />
Packaging Technologien werden damit nicht benötigt.<br />
wireless internet<br />
wiGwaM - wireless Gigabit with advanced<br />
Multimedia support<br />
the IHp contribution to this BMBF funded cooperative<br />
project was focused on the development and prototype<br />
implementation of an ultra-high-speed communication<br />
system with data rates of 1 Gbps. to satisfy<br />
the rapidly growing demand for communication<br />
bandwidth, the 60 GHz band has become more and<br />
more attractive to many companies and research institutions.<br />
We have recently completed and presented<br />
the first version of a system demonstrator, operating<br />
in this frequency band. this demonstrator comprises<br />
three main blocks: the 60 GHz analog frontend (AFe),<br />
the baseband processor (BB) and a high-throughput<br />
medium access control processor (MAC). three departments<br />
of IHp are involved in the project.<br />
the 60 GHz receiver and transmitter chips convert the<br />
60 GHz signal to an intermediate frequency (IF) of<br />
about 5 GHz or vice versa, respectively. A low phase<br />
noise local oscillator is required for oFDM application.<br />
We used a pll working at 56 GHz for both the<br />
receiver and the transmitter. After up conversion,<br />
the signal is weak. A high gain buffer is needed to<br />
amplify it. to reduce the risk of oscillations, we used<br />
a differential design approach. A 60 GHz transmitter<br />
frontend was integrated into a single chip as shown<br />
in Fig. 1. three building blocks were integrated: A<br />
56 GHz pll, an up converter mixer and a 60 GHz output<br />
buffer. the up converter mixer utilizes a Gilbert mixer<br />
topology as the core. A two stage cascode topology<br />
was used as the 60 GHz output buffer which provides<br />
a gain as high as 20 dB and better linearity compared<br />
to a common emitter configuration. two boards<br />
were designed for transmitter and receiver, respectively.<br />
Rogers 3003 is used as the substrate instead<br />
of ceramic because of the low cost. the bare chips<br />
are mounted directly onto the boards in a silicon on<br />
board (SoB) technology. they are connected to the<br />
board by bond wires. Fig. 2 shows the receiver board.<br />
the transmitter board was realized in the same way.<br />
Complicated and expensive packaging techniques are<br />
not required in this solution. A Vivaldi antenna with a<br />
A n n u A l R e p o R t 2 0 0 6<br />
27
Abb. 1: Chip Photo des 60-GHz-Senders.<br />
Fig. 1: transmitter chip photo.<br />
28 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Direkt auf der Leiterplatte ist auch eine Vivaldi Antenne<br />
mit einem Öffnungswinkel von 30 Grad untergebracht.<br />
Diese Antenne wurde von unserem Partner, dem IHE<br />
der Universität Karlsruhe entwickelt.<br />
Die ZF Modulator- und Demodulator-Chips wurden ebenfalls<br />
am <strong>IHP</strong> entwickelt (Abb. 3). Der ZF-Empfänger<br />
demoduliert das 5-GHz-Signal vom 60-GHz-Frontend<br />
und generiert das komplexe Basisband I / Q Signal. Eine<br />
programmierbare 10-GHz-PLL mit einem Frequenzteiler<br />
erzeugt das I / Q Signal für den Sender und auch für<br />
den Empfänger. Auf der Sendeseite wird das komplexe<br />
I / Q Basisbandsignal mit einem I / Q Modulator auf die<br />
Zwischenfrequenz von 5 GHz gemischt und dann an das<br />
60-GHz-Frontend weitergeleitet.<br />
Bislang wurde kein 60-GHz-Transceiver in Silizium Technologie<br />
mit einem integrierten 60 GHz HF-Filter veröffentlicht.<br />
Dieses Filter ist notwendig, um Interferenzen<br />
mit benachbarten Kanälen zu vermeiden. Dazu wurde<br />
ein LNA mit einem Bandpassfilter dritter Ordnung entworfen.<br />
Der gemessene und simulierte Frequenzgang<br />
dieses Filters ist in Abb. 4 dargestellt. Ein kompletter<br />
Empfänger kann durch direkte Verbindung des LNA mit<br />
dem Mischer ohne weitere HF-Filter implementiert werden.<br />
Der Basisbandprozessor (BB) des WIGWAM Demonstrators<br />
arbeitet mit der OFDM Übertragungstechnik.<br />
Es werden acht verschiedene Datenraten unterstützt.<br />
Diese reichen von 120 Mbps bis zu 1,08 Gbps. Eine neuere<br />
Breitbandversion unterstützt auch Datenraten bis<br />
radiation angle of about 30 degree is also integrated<br />
into the boards. this antenna was developed by our<br />
partner, the IHe at the university of Karlsruhe.<br />
the IF modulator and demodulator chips were also<br />
designed at IHp. the IF receiver demodulates the<br />
5 GHz signal from the 60 GHz frontend output and<br />
generates a complex baseband I / Q signal. A 10 GHz<br />
programmable pll with a divide-by-two stage was<br />
used to generate the quadrature lo signal for both<br />
the receiver and the transmitter. the IF transmitter<br />
modulates the baseband I / Q signal to 5 GHz IF signal<br />
which feeds to the 60 GHz transmitter IF input.<br />
Abb. 2: Leiterplatte mit Empfängerchip.<br />
Fig. 2: Receiver board.<br />
up to now, all published 60 GHz transceiver systems in<br />
silicon technologies do not have an on chip RF filter,<br />
which is necessary to avoid interference with other<br />
systems working in a close frequency band. For this<br />
purpose, a new lnA with a 3rd order bandpass filter<br />
response was successfully designed and tested. the<br />
measured and simulated lnA frequency response is<br />
shown in Fig. 4. A complete receiver frontend can be<br />
realized by directly connecting the lnA and the mixer<br />
without any passive RF filter.<br />
the Baseband processor (BB) of the WIGWAM demonstrator<br />
is based on oFDM transmission and supports<br />
eight different data rates ranging from 120 Mbps up<br />
to 1,08 Gbps. A newer wideband version supports<br />
higher rates up to 2 Gbps. the simulated frame-error
Abb. 3: LNA und Mischer Chip Photos.<br />
Fig. 3: lnA and mixer chip photo.<br />
Abb. 5: Paketfehlerraten bei einer Datenrate von 1920 Mbps<br />
für verschiedene Kanäle.<br />
Fig. 5: System performance of the high data rate mode<br />
(1920 Mbps) for different channels.<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
zu 2 Gbps. Die Paketfehlerkurven in Abbildung 5 entstammen<br />
Systemsimulationen für die Datenrate 1920<br />
Mbps für vier verschiedene Kanalszenarien unter der<br />
Annahme der perfekten Kanalschätzung. Die Paketgröße<br />
betrug 2048 Datenbytes. Die vier Szenarien entsprechen<br />
typischen Ausbreitungsbedingungen im Büro<br />
für Sichtkontakt (CM 3.2) und ohne Sichtkontakt (CM<br />
4) sowie entsprechenden Modellen in einer Bibliothek<br />
(CM 5 und CM 6). Ungerichtete Antennen liegen den<br />
Kanalmodellen zugrunde. Fehlerhafte Pakete müssen<br />
in der Regel neu gesendet werden. Um den Einfluss von<br />
solchen Paketen auf die effektive Datenrate vernachlässigen<br />
zu können, ist eine Paketfehlerrate von unter<br />
1% erstrebenswert. Von Interesse sind daher diejenigen<br />
Punkte, wo die Fehlerkurven unter die 1%-Marke fallen.<br />
Anhand der Charakteristiken des analogen Front-Ends<br />
(Sendeleistung, Antennengewinn, Rauschzahl) lässt<br />
Abb. 4: Gemessene und simulierte Verstärkung des LNA in<br />
Abhängigkeit von der Frequenz.<br />
Fig. 4: Measured and simulated lnA gain versus frequency.<br />
curves shown in Fig. 5 represent the physical layer<br />
system performance for the high data rate mode of<br />
1920 Mbps for four different channel scenarios under<br />
the assumption of perfect channel estimation. 2048<br />
data bytes were used per frame. the four channel<br />
scenarios are the office line-of-sight (loS) link (CM<br />
3.2) and non-line-of-sight (nloS) link (CM 4) and<br />
the library loS and nloS link scenarios (CM 5 and CM<br />
6). omnidirectional antennas were assumed in the<br />
simulations. A desirable packet error rate is below<br />
1%, in which case the real throughput is hardly diminished<br />
by erroneous frames, which usually have to<br />
be retransmitted. the critical points are determined<br />
by the 1%-crossings of the FeR curves. together with<br />
the characteristics of the analogue frontend (trans-<br />
Abb. 6: Analog Frontend Komponenten des <strong>IHP</strong> 60-GHz-<br />
Demonstrators.<br />
Fig. 6: Analog frontend components of the <strong>IHP</strong> 60 GHz<br />
demonstrator.<br />
A n n u A l R e p o R t 2 0 0 6<br />
2
0 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
sich die erzielbare Reichweite für eine zuverlässige<br />
Übertragung abschätzen.<br />
Als Medium Access Control (MAC) Protokoll wurde eine<br />
modifizierte Version des IEEE 802.15.3 MAC Standards<br />
verwendet. Es läuft auf einer Hardware-Plattform, die aus<br />
einem in <strong>IHP</strong>-Technologie gefertigten LEON Prozessor Chip<br />
und einem FPGA besteht. In letzterem sind die externen<br />
Interface und ein Hardware-Accelerator realisiert, der zeitkritische<br />
Operationen wie die Berechnung der CRC Prüfsummen<br />
mit der erforderlichen Performance ausführt.<br />
Ein kompletter 60-GHz-Demonstrator für Datenraten bis<br />
1 Gbps wurde entwickelt und ist in Abb. 6 zu sehen. Das<br />
Analog Frontend basiert auf Schaltungen in der <strong>IHP</strong>eigenen<br />
0,25-µm-SiGe-BiCMOS-Technologie. Die Basisbandverarbeitung<br />
ist auf einer FPGA Plattform implementiert.<br />
Dies erlaubt einen „Hardware-in-the-Loop”<br />
Ansatz zur schnellen Verifikation des Analog Frontend.<br />
Abb. 7: OFDM 16-QAM Konstellationsdiagramm mit kommerziell<br />
verfügbarem Basisband Signal Generator.<br />
Fig. 7: oFDM 16 QAM constellation diagram using commercial<br />
baseband equipment.<br />
Die maximale Datenrate, die wir mit diesem Demonstrator<br />
bislang gezeigt haben, beträgt 720 Mbps. Dies wurde<br />
auf dem BMBF Statusseminar in Erlangen im Juni <strong>2006</strong><br />
vorgeführt. Ein 16-QAM Konstellationsdiagramm sowie<br />
das Leistungsspektrum des OFDM-Signals sind in den<br />
Abb. 7 bzw. 8 dargestellt. Die letztendliche Version des<br />
Demonstrators wird eine Datenrate von > 1 Gbps übertragen<br />
können. Gemeinsam mit internationalen Partnern<br />
setzen wir unsere Arbeiten fort, die Ergebnisse dieses<br />
Projektes in den IEEE802.15.3c Standard einzubringen.<br />
mit power, antenna gain, noise figure), the maximum<br />
range of reliable transmission can be estimated.<br />
An adapted version of the Ieee 802.15.3 MAC standard<br />
was utilized as Medium Access Control (MAC)<br />
protocol. It runs on a hardware platform consisting<br />
of a 32 bit leon processor fabricated in IHp 0.25 µm<br />
CMoS technology and an FpGA implementing external<br />
interfaces as well as a hardware accelerator. this component<br />
allows implementing time critical functions<br />
such as the CRC check with the performance needed.<br />
A complete 60 GHz oFDM demonstrator for data rates<br />
up to 1 Gbps was developed and implemented as shown<br />
in Fig. 6. the analog frontend is based on circuits implemented<br />
in IHp‘s 0.25 µm SiGe BiCMoS technology.<br />
the baseband processor is implemented on an FpGA<br />
platform. this allows a hardware-in-the-loop approach<br />
for fast verification of the analog frontend.<br />
Abb. 8: Leistungsspektrum der OFDM Unterträger mit SNR.<br />
Fig. 8: Subcarrier power spectrum and SnR.<br />
the maximum data rate achieved by our demonstrator<br />
so far is 720 Mbps. It was shown at the BMBF Status<br />
Seminar in erlangen in June <strong>2006</strong>. We will continue<br />
our work to further optimize the performance of the<br />
demonstrator. the QAM constellation diagram and<br />
subcarrier power spectra measured at the receiver are<br />
shown in Figs. 7 and 8.<br />
the final version will show the full data rate of >1<br />
Gbps. In parallel, we will continue our efforts to contribute<br />
our results to the Ieee802.15.3c standard.
HOMEPLANE<br />
Der heutige Heimvernetzungsmarkt ist geprägt durch<br />
die Heterogenität der Endgeräte und Anwendungen<br />
ohne Interoperabilität. HOMEPLANE (Home Media<br />
Platform and Networks) ist ein vom BMWi finanziertes<br />
Projekt mit dem Ziel, bestehende Hemmnisse bei der<br />
Einführung von Heimnetzen zu beseitigen und eine homogene,<br />
benutzerfreundliche Plattform zu schaffen.<br />
In einem Konsortium von fünf Partnern (Universität<br />
Dortmund, Siemens, Microsoft, Lintec, <strong>IHP</strong>) werden Szenarien<br />
und Geschäftsmodelle, Middleware, Sicherheit,<br />
Benutzerschnittstellen und Medienübertragung behandelt.<br />
Ein spezieller Schwerpunkt ist die drahtlose Übertragung<br />
mit der benötigten Dienstgüte in einem WLAN<br />
nach IEEE 802.11. Neben der Konsortialführung und<br />
Untersuchungen zur Sicherheit ist dieses die wichtigste<br />
Aufgabe des <strong>IHP</strong> im Projekt.<br />
Ein funkbasiertes System hat deutliche Vorteile gegenüber<br />
einer drahtgebundenen Lösung (Abb. 9). Der<br />
Benutzer kann in einfacher Weise sein Netz zusammensetzen,<br />
ohne eine komplizierte Verkabelung durchzuführen.<br />
Die Funklösung bietet höhere Flexibilität, da<br />
die Geräte ohne Aufwand positioniert werden können.<br />
Darüber hinaus wird der Trend zu mobilen Endgeräten<br />
unterstützt, der Anwender kann seine Dienste dort in<br />
Anspruch nehmen, wo er es gerade bevorzugt.<br />
Abb. 9: Skizze eines Heimnetzes auf WLAN Basis.<br />
Fig. 9: Sketch of a home network based on WlAn.<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
hoMeplane<br />
Currently, home networking is characterized by a mixture<br />
of devices and applications without interoperability.<br />
the project HoMeplAne (Home Media platform<br />
and networks) is financed by the German Federal Ministry<br />
of economics and technology with the aim to<br />
eliminate obstacles in the introduction of home networks<br />
by developing a homogeneous and user-friendly<br />
platform.<br />
A consortium of five partners (university of Dortmund,<br />
Siemens, Microsoft, lintec, IHp) is investigating user<br />
scenarios and business models, middleware, security,<br />
user interfaces, and media data transmission. A special<br />
focus is on wireless transmission with the required<br />
quality of service in an Ieee 802.11 WlAn. Apart from<br />
the consortium leadership and security issues this is<br />
the main effort of the IHp in the project.<br />
A wireless system offers major advantages compared<br />
to wired solutions in a home network (Fig. 9). typical<br />
users want to build up their system without the effort<br />
for cabling. Wireless transmission offers higher flexibility,<br />
since devices can be repositioned easily. Also,<br />
the trend to mobile devices is supported; each user<br />
can invoke his favorite applications wherever he finds<br />
it convenient.<br />
legend<br />
dVb-t Digital Video Broadcast terrestrial<br />
wlan Wireless local Area networks<br />
bs Base Station<br />
Gw Gateway<br />
haG Home Automation Gateway<br />
rc Remote Control<br />
Vr Video Recorder<br />
tV television<br />
stb Set-top Box<br />
dsl Digital Subscriber line<br />
pc personal Computer<br />
A n n u A l R e p o R t 2 0 0 6
Bei der Verwendung von WLAN als Basis der Heimvernetzung<br />
gibt es einige Probleme zu lösen. Diese werden<br />
in Zusammenarbeit mit dem Lehrstuhl für Kommunikationstechnik<br />
der Universität Dortmund untersucht.<br />
Erstens ist der Funkkanal anfällig für Störungen. Daher<br />
sind besondere Maßnahmen nötig, um die Dienstgüte<br />
für Medienübertragung wie z.B. Video zu garantieren.<br />
Zweitens teilen sich alle Benutzer die limitierte Bandbreite.<br />
Es ist insbesondere in Mehrfamilienhäusern eine<br />
Herausforderung, allen Benutzern die erwartete Performance<br />
zu liefern.<br />
Der IEEE 802.11 Standard wurde für die Übertragung<br />
gewählt, weil dieser zum de-facto WLAN-Standard geworden<br />
ist. Dieses Protokoll wurde jedoch für die Computernvernetzung<br />
entworfen und ist wenig geeignet für<br />
Daten mit Echtzeit-Anforderungen. Die Arbeiten hierzu<br />
setzen auf dem vorangegangenen EU-Projekt WINDECT<br />
auf. Abb. 10 zeigt, wie dort die Dienstgüte für Audiodaten<br />
in einem hybriden Telefonie / Daten WLAN Netz<br />
bereitgestellt wurde. Den Audiodaten werden von der<br />
Baisstation im „contention-free period“ Zeitintervalle<br />
zugewiesen, in welchen mit garantierter Priorität übertragen<br />
wird. Im darauf folgenden „contention period“<br />
werden Daten übertragen, welche nach den üblichen<br />
Algorithmen ihre Prioritäten aushandeln. Diese Lösung<br />
setzt eine zentrale Netzstruktur voraus. Für das Heimnetz<br />
wird eine Ad-hoc-Struktur bevorzugt. Die zu entwickelnden<br />
Lösungen sind prinzipiell ähnlich, sind aber<br />
erheblich aufwändiger um den Anforderungen mehrerer<br />
Wohnungen und diverser Dienstgüteklassen gerecht zu<br />
werden. Von zentraler Bedeutung ist, dass der vom <strong>IHP</strong><br />
entwickelte WLAN-Chipset an die untersuchten Algorithmen<br />
angepasst werden kann.<br />
2 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
When the home network uses wireless data transmission,<br />
some challenges arise. the IHp is investigating<br />
these in close cooperation with the Communication<br />
technology Institute of the university of Dortmund.<br />
First, the wireless channel is error-prone, requiring<br />
special measures to guarantee the quality of service<br />
needed for, e.g., streaming video. Secondly, all users<br />
share the limited bandwidth. In houses occupied by<br />
several families, specially designed procedures must<br />
be used to supply the required performance to all<br />
users.<br />
the Ieee 802.11 standard was chosen because it has<br />
become the de-facto WlAn standard. However, it was<br />
developed for data transfer between computers and<br />
not for streaming video with real-time requirements.<br />
the project work builds on the previous eu-financed<br />
WInDeCt project. Fig. 10 shows how the quality of<br />
service for audio data was guaranteed in a hybrid telephone<br />
/ data WlAn system. Base stations assign time<br />
slots for audio data in the “contention-free period”.<br />
In the “contention period” other data is transmitted<br />
according to the usual algorithms for channel access.<br />
this solution is based on a centralized structure. For a<br />
home network, a decentralized configuration is preferable.<br />
the newly developed procedures will be similar<br />
in principle, but will be more complicated in order to<br />
handle the requirements of neighboring users and varying<br />
quality of service needs. An important feature<br />
is that the IHp WlAn chipset can be adapted to the<br />
investigated algorithms.
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Abb. 10: Unterstützung der Dienstgüte für Audiodaten im WLAN.<br />
Fig. 10: Support of quality of service for audio data in a WlAn.<br />
Als weiterer Schwerpunkt bearbeitet das <strong>IHP</strong> die Sicherheitsaspekte.<br />
Hierbei soll die Privatsphäre sowohl innerhalb<br />
als auch zwischen den Wohneinheiten gewährleistet<br />
sein, der Benutzer soll sicher von extern auf sein<br />
Heimnetz zugreifen können. Eine sichere Fernwartung<br />
des Netzes soll unterstützt werden, und es müssen die<br />
Medieninhalte geschützt werden. Die entwickelten Verfahren<br />
zur WLAN-Optimierung und Sicherheit werden in<br />
einem Demonstrator vorgeführt.<br />
the IHp is also working on the security aspects in<br />
home networks. the goals are that privacy is protected<br />
between neighbors as well as within a family,<br />
that remote servicing can be done safely, that users<br />
can access their network externally without security<br />
risks, and that media content is protected adequately.<br />
the developed methods for WlAn optimization<br />
as well as security support will be presented in a demonstrator.<br />
A n n u A l R e p o R t 2 0 0 6
Sichere Kommunikation mit Endgeräten<br />
beschränkter Ressourcen<br />
Der Einsatz mobiler Endgeräte sowie die Verwendung<br />
von Sensornetzen stellen neue Herausforderungen an<br />
die Realisierung einer sicheren Kommunikation. Die<br />
auszutauschenden persönlichen und geschäftlichen<br />
Daten müssen gegen unerlaubtes Mithören und Verfälschen<br />
geschützt werden. Die hierfür verwendeten<br />
kryptographischen Verfahren sind jedoch sehr rechenintensiv<br />
und verbrauchen somit relativ viel Energie. Um<br />
lange Nutzungszeiten bei sicherer Kommunikation zu<br />
realisieren werden in diesem Projekt energieeffiziente<br />
Hardwarebeschleuniger untersucht. Neben dem Energieverbrauch<br />
sind auch die Kosten eines Hardwarebeschleunigers<br />
von großer Bedeutung, da die Kosten für<br />
einen Sensorknoten durch die zusätzliche Hardware nur<br />
minimal erhöht werden dürfen.<br />
Die Elliptische Kurven Kryptographie (ECC) ist ein<br />
asymmetrisches Verschlüsselungsverfahren, das eine<br />
herausragende Sicherheit bei relativ kurzen Schlüssellängen<br />
aufweist. Die aufwändigste Operation hierbei<br />
ist die Multiplikation von zwei jeweils mehrere hundert<br />
Bit langen Polynomen. Diese kann bis zum Tausendfachen<br />
beschleunigt werden, wenn geeignete Hardwarebeschleuniger<br />
eingesetzt werden. Im Rahmen dieses<br />
Projektes wurde eine Lösung entwickelt, die sich mit<br />
geringem Designaufwand an die Anforderungen der jeweiligen<br />
Einsatzumgebung anpassen lässt (Abb. 11).<br />
A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
secure communication for resource<br />
constraint devices<br />
the use of mobile devices as well as the advent of<br />
sensor networks raises new challenges for ensuring<br />
a secure communication. personal and business data<br />
have to be protected against eavesdropping and falsification.<br />
this can be achieved by applying cryptographic<br />
means. the problem is that they require a<br />
lot of computing and significantly consume battery<br />
power. In order to ensure long up times while still<br />
communicating securely this project investigates energy<br />
efficient hardware accelerators. For this class of<br />
devices, cost is also an important issue since material<br />
costs of e.g. sensor nodes should only increase by a<br />
few euro cents.<br />
elliptic Curve Cryptography (eCC) is a public key approach<br />
that ensures a high level of security with relatively<br />
short keys. the most complex operation is the<br />
multiplication of two polynomials of several hundred<br />
bits length. this operation can be sped up by three<br />
orders of magnitude if appropriate hardware accelerators<br />
are used. In this project we developed a solution<br />
which can easily be adapted to current design goals<br />
such as extremely small area consumption or low power<br />
consumption (Fig. 11).<br />
Abb. 11: Struktur einer 4-Segment 233 Bit Multiplikationseinheit.<br />
Fig. 11: Structure of the 4-segment 233 bit multiplication unit.
Tabelle 1: Größe der Selektions- und Akkumulationseinheit<br />
verschiedener Konfigurationen im Vergleich zu der<br />
bisherigen fest-verdrahteten Lösung.<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Diese Flexibilität wird dabei durch den Einsatz der im<br />
Rahmen des Projektes entwickelten Iterativen Karatsuba<br />
Multiplikation ermöglicht. Anstelle eines monolithischen<br />
Multiplikationsblockes ist die Multiplikation<br />
dreigeteilt. Zuerst wird in einem Selektionsblock die<br />
Multiplikation in eine Anzahl kleinerer Teil-Multiplikationen<br />
aufgeteilt. Die Anzahl und Größe dieser partiellen<br />
Multiplikationen bestimmt, wie schnell und groß<br />
das Design am Ende wird. Wir haben drei bevorzugte<br />
Designs: Ein 2-Segment-Setup, das 3 Clockzyklen<br />
benötigt, das 4-Segment-Setup (9 Zyklen) und das<br />
8-Segment-Setup (27 Zyklen). Im zweiten Schritt wird<br />
in jedem Clockzyklus eine partielle Multiplikation in<br />
einem kombinatorischen Multiplizierer berechnet. Die<br />
Ergebnisse werden im dritten Schritt in der so genannten<br />
Akkumulationseinheit zum Endergebnis zusammengefügt.<br />
Die Selektions- und Akkumulationseinheiten sind dabei<br />
hochregulär gestaltet. Das ermöglicht nicht nur ein hohes<br />
Maß an Flexibilität, sondern benötigt auch weniger<br />
Siliziumfläche. Im Vergleich zu einer ersten am <strong>IHP</strong> realisierten<br />
fest verdrahteten Lösung können bis zu 70%<br />
Fläche für das 8-Segment-Setup eingespart werden<br />
(siehe Tabelle 1).<br />
Flexibility was achieved by exploiting the Iterative<br />
Karatsuba approach which was developed earlier in<br />
this project. our multiplier does not apply one monolithic<br />
multiplication block but three smaller pieces.<br />
First, the large multiplication is broken down into a<br />
set of smaller partial multiplications. the number<br />
and the size of these partial multiplications determine<br />
the performance and the size of the whole design.<br />
We normally use the following three designs: a<br />
2-segment design that needs only three clock cycles<br />
for the complete multiplication, the 4-segment and<br />
8-segment design which need 9 and 27 clock cycles,<br />
respectively. the second step is the actual execution<br />
of the partial multiplications in a combinatorial<br />
multiplier. Its results will be finally aggregated in an<br />
accumulation unit.<br />
Both the selection and the accumulation units were<br />
designed as a highly regular structure. the regularity<br />
in the design is not only cornerstone of the flexibility,<br />
but also implies benefits regarding silicon area.<br />
A comparison of our current solution with its hardwired<br />
predecessor shows that we can save up to 70%<br />
of the silicon area (table 1).<br />
selection accumulation summation original<br />
sel. + acc. Method<br />
2 segment 0.05 0.08 0.13 0.15<br />
4 segment 0.05 0.09 0.14 0.39<br />
8 segment 0.06 0.10 0.16 0.59<br />
table 1: Silicon area of selection and accumulation unit of<br />
different configurations compared to their predecessor<br />
version.<br />
A n n u A l R e p o R t 2 0 0 6
6 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Die benötigte Siliziumfläche und Energie pro Multiplikation<br />
für eine Auswahl von Multiplizierern mit unterschiedlichen<br />
Operanden und damit auch Schlüssellängen<br />
sind in Abb. 12 dargestellt. Für fünf verschiedene<br />
Operandengrößen sind je drei Setups aufgeführt, wobei<br />
die Anzahl der Segmente angibt, in wie viele Teile die<br />
Operanden zerlegt werden. Anhand der Parameter kann<br />
man dann eine für die Anwendung optimale Konfiguration<br />
aus Sicherheit (Schlüssellänge), Siliziumfläche<br />
und Energieverbrauch wählen.<br />
Mit den hier entwickelten Hardwarebeschleunigern wird<br />
der Einsatz asymmetrischer Verschlüsselungsverfahren<br />
sogar für den Bereich der ubiquitären Systeme ermöglicht.<br />
Sie verbrauchen einerseits zur Realisierung ihrer<br />
Aufgaben kaum Energie und andererseits kosten sie<br />
nur wenige Euro-Cent wegen ihres geringen Flächenbedarfes.<br />
the required silicon area and the energy per multiplication<br />
for a set of multiplication units supporting<br />
diverse operand sizes (i.e. key lengths) is depicted in<br />
Fig. 12. For each operand size three setups are shown.<br />
the number of segments represents the proportion of<br />
the partial multiplication to the full size. Based on<br />
the presented results one can find the optimal configuration<br />
for each application – with the parameters<br />
security (key length), silicon area and energy consumption.<br />
the hardware accelerators developed in this project<br />
allow the use of public key cryptography even for<br />
ubiquitous systems. this is due to the fact that our<br />
solution requires almost no energy and its production<br />
cost is only a few euro cents due to its small size.<br />
Abb. 12: Siliziumfläche (Blöcke) und Energieverbrauch (Linien)<br />
verschiedener am <strong>IHP</strong> verwendeter Multiplizierer für<br />
Schlüssellängen von 163 bis 571 Bit. Fläche und Energie-<br />
verbrauch pro Multiplikation wurden für die 0,25-µm-<br />
CMOS-Technologie des <strong>IHP</strong> gemessen.<br />
Fig. 12: Silicon area (bars) and energy consumption (lines) of<br />
diverse IHp multipliers and key length from 163 to 571 bit.<br />
Area and energy per multiplication have been measured<br />
for the IHp 0.25 µm CMoS technology.
Strahlungsresistente Chips<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Ziel des Projektes ist es, mit vorwiegend schaltungs-<br />
technischen Mitteln, d.h. mit fehlertolerantem (FT) Design,<br />
eine höhere Resistenz integrierter Schaltungen gegen<br />
Fehlfunktionen zu erreichen, die insbesondere durch<br />
hochenergetische Strahlung hervorgerufen werden.<br />
Es existieren viele verschiedene Strahlungsarten sowohl<br />
im Weltraum als auch in Kernreaktoren oder in den Teilchenbeschleunigern<br />
der Hochenergiephysik. Elektronische<br />
Bauteile sind dort erhöhter Belastung z.B. durch<br />
Strahlung energiereicher Protonen oder schwerer Ionen<br />
sowie Alpha-, Röntgen- oder Gammastrahlung ausgesetzt.<br />
Neben den unterschiedlichen Langzeiteffekten im Halbleitermaterial,<br />
die vorwiegend mit technologischen oder<br />
Layout-technischen Mitteln reduziert werden müssen,<br />
treten auch sogenannte Single-Event-Effekte auf, die<br />
mit spezieller Schaltungstechnik unterdrückt werden<br />
können. Der häufigste Effekt ist der Single-Event-Upset<br />
(SEU), bei dem z.B. eine durch ein einzelnes Proton<br />
hervorgerufene Ionisierung des Halbleitermaterials<br />
zur fehlerhaften Änderung eines gespeicherten Bit-Zustandes<br />
führt.<br />
radiation-hardened chips<br />
the objective of the project is to increase the resistance<br />
of CMoS integrated circuits against functional<br />
failures caused by the high-energy radiation using<br />
predominantly circuit-design techniques, i.e. faulttolerant<br />
(Ft) design techniques.<br />
Many different types of radiation exist in space, in nuclear<br />
reactors and in particle accelerators. electronic<br />
components in these environments are subjected to<br />
enhanced stress due to radiation (for example, beams<br />
of energetic protons or heavy ions, alpha-, gamma- or<br />
x-radiation, etc.).<br />
long-term radiation effects in semiconductor materials<br />
are usually reduced by the use of technological or<br />
layout techniques, while short-term radiation effects<br />
like the so-called Single-event-upset (Seu is one of<br />
the most frequent radiation effects in semiconductor<br />
materials) can also be minimized by the use of special<br />
circuit-design techniques. Failures caused by Seu<br />
are the change of a bit-state in a circuit sequential<br />
element caused by a single particle (proton) induced<br />
ionization of the semiconductor material.<br />
Abb. 13: Für Strahlungstests ausgewähltes LEON3-FT-Chip.<br />
Fig. 13: leon3 Ft chip selected for radiation tests.<br />
A n n u A l R e p o R t 2 0 0 6<br />
7
Für die Implementierung von FT-Schaltungstechniken<br />
wurde ein 150 MHz LEON3-FT-Prozessorkern mit jeweils<br />
2 kByte Befehls- und Daten-Cache, einem AMBA-Systembus<br />
sowie daran angeschlossenen Systemkomponenten<br />
ausgewählt. Zur Erweiterung der Testmöglichkeiten<br />
wurde eine Scan-Chain sowie ein JTAG-Interface<br />
eingebaut. In Abb. 13 ist das Blockschaltbild dargestellt<br />
Im ersten Schritt wurden fehlertolerante Schaltungen<br />
eingebaut, die sowohl sämtliche Flipflops als auch alle<br />
internen Speicherblöcke vor SEUs schützen sollen. Die<br />
Flipflops wurden mit dreifacher Redundanz und anschließender<br />
Auswahlschaltung versehen. Die Speicher<br />
erhielten zusätzliche Parity-Bits, die mit einer entsprechenden<br />
Error-Detection-and-Correction (EDAC) Logik<br />
verwaltet wurden. Wegen der etwas komplizierteren<br />
Technik wurde das Registerfile in den SEU-Schutz noch<br />
nicht mit einbezogen.<br />
Die Strahlungstests fanden bei der ESA (Nordwijk, Niederlande)<br />
statt und wurden über unsere Partnerfirma<br />
Gaisler Research (Göteborg, Schweden) organisiert und<br />
vorgenommen. Abb. 14 zeigt den Versuchsaufbau und<br />
Abb. 15 den für die Strahlungstests geöffneten LEON3-<br />
FT Chip.<br />
Abb. 14: SEU-Test Vakuumkammer mit Zielsystem.<br />
Fig. 14: Seu test vacuum chamber and target system.<br />
8 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
As the fault-tolerant (Ft) test-chip for investigating<br />
the short-term radiation effects (specially, the Seu),<br />
a 150 MHz leon3-Ft processor core with instruction<br />
and data caches (2 kByte each), AMBA system-bus<br />
and attached system components has been selected.<br />
For improved test purpose, a scan-chain and a JtAG<br />
interface has been implemented. Fig. 13 shows the<br />
block-diagram of the test-chip.<br />
In the first step of building, fault-tolerant integrated<br />
circuits were introduced to protect all flip-flops<br />
and internal memory blocks against the Seus. In<br />
this case, the flip-flops are protected by the use of<br />
triple-module redundancy (tMR) and corresponding<br />
voter circuitry. the memory blocks included additional<br />
parity-bits that were controlled by corresponding<br />
error Detection and Correction (eDAC) logic. In this<br />
first step the register file is not protected against the<br />
Seus due to complex correction technique and limited<br />
core area.<br />
the radiation test was organized and performed at<br />
eSA (noordwijk, the netherlands) by our partner<br />
company Gaisler Research (Göteborg, Sweden). Fig.<br />
14 shows the test chamber and target system, while<br />
Fig. 15 shows the de-lidded leon3-Ft chip.<br />
Abb. 15: Geöffneter LEON3-FT Chip.<br />
Fig. 15: De-lidded leon3-Ft chip.
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Obwohl weder Technologie- noch Layout-Anpassungen<br />
vorgenommen wurden und das Registerfile noch nicht<br />
geschützt war, wurden in einem 3-stündigem Test<br />
(Strahlungsquelle Cf-252) nur 281 SEUs registriert, von<br />
denen 99% korrigiert wurden. Allerdings traten etwa<br />
halbstündlich Latchup-Effekte auf, die jedoch nicht zur<br />
Zerstörung des Chips führten.<br />
In einem weiteren Zwischenschritt wurden kleinere Design-Änderungen<br />
durchgeführt, u.a. wurden schnellere<br />
statische Speicher (SRAMs) eingesetzt. Die anschließend<br />
durchgeführten Strahlungstests führten zu ähnlichem<br />
SEU-Verhalten (99,5% korrigiert), doch es traten<br />
keine Latchup-Effekte mehr auf.<br />
Diese sehr schnell und ohne aufwändige Technologieänderung<br />
erreichten Ergebnisse werden in der dritten<br />
Phase sowohl durch weitere schaltungstechnische Maßnahmen<br />
als auch durch die Entwicklung einer speziellen<br />
Bibliothek für strahlungsresistente Schaltungen<br />
ergänzt. Das Ziel ist die Registrierung des <strong>IHP</strong> als zugelassener<br />
Hersteller von strahlungsresistenten Schaltungen<br />
und Baugruppen durch die ESA.<br />
the test-chip was subjected to heavy-ion error injection<br />
using Californium (Cf-252). the tests were carried<br />
out for 3 hours and although no changes were made<br />
neither in technology nor layout only 281 effective<br />
Seus were reported and 99% of these were corrected.<br />
one latch-up event was registered approximately every<br />
30 minutes with the given ion flux.<br />
In the meantime, an improved version of the testchip<br />
with faster static memories (SRAMs) was implemented.<br />
the results of the performed radiation tests<br />
showed similar Seu behaviour with 99.5% of the Seus<br />
corrected but no latch-up effect occurred during the<br />
whole test.<br />
these preliminary results (achieved in a short time<br />
and without expensive technological changes) will<br />
be improved in a third phase of the project using a<br />
new circuit design technique as well as developing<br />
a special radiation-hardened cell library. the main<br />
goal is to qualify and register IHp for european Space<br />
Agency (eSA) as an approved provider of radiationhardened<br />
CMoS integrated circuits and systems.<br />
A n n u A l R e p o R t 2 0 0 6
0 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Hochfrequenz-SiGe-MMICs für einen Umsetzer<br />
und einen Lokaloszillator (SiMs)<br />
Das Ziel des Projektes SiMs ist es, Lokaloszillatoren als<br />
monolithische Mikrowellenbauteile (MMICs) zu entwerfen<br />
und zu testen, jeweils eins für 18,3 GHz und für den<br />
10-GHz-Bereich. Diese Frequenzen sind für die Verwendung<br />
von Hardware im Weltraum üblich.<br />
Die Projektkoordination erfolgt durch die Kayser-<br />
Threde GmbH, München als Prime Contractor zur ESA als<br />
Kunde, mit dem <strong>IHP</strong>, Frankfurt (Oder) und dem IMST,<br />
Kamp-Lintfort als Subauftragnehmer.<br />
Der Kommunikationsmarkt benötigt Breitband-Übertragungen,<br />
High Definition Television (HDTV) und Interaktivität,<br />
wobei HDTV die führende Rolle übernehmen<br />
wird. Alles zusammen erfordert eine große Anzahl von<br />
individuellen Übertragungskanälen, was zu einer großen<br />
Anzahl von Auf- und Abwärtskonvertern führt. Diese<br />
hohen Anforderungen können optimal durch hochintegrierte<br />
SiGe MMICs bedient werden. Als Demonstrator<br />
wird deshalb in diesem Projekt ein Lokaloszillator (LO)<br />
Synthesizer entwickelt, da diese HF-Schaltung sehr gut<br />
geeignet ist, die Vorteile der SiGe-Technologie nachzuweisen.<br />
Die beiden kritischsten Bausteine des LO sind<br />
der Voltage-Controlled-Oscillator (VCO) mit der zu erreichenden<br />
Phasenrauschspezifikation, und der Fraktional-N<br />
Teiler mit seinem starken Einfluss auf das Phasenrauschen<br />
und die Spurs.<br />
Es wurde ein differentieller Colpitts-Oszillator mit einem<br />
speziellem Varaktor-Design entwickelt, um das Phasenrauschen<br />
zu verbessern. Abb. 16 zeigt das Layout des VCO. Für<br />
den 10-GHz-VCO wurden sehr gute Phasenrauschwerte mit<br />
-119 dBc für 1 MHz Offset erreicht, und die Ausgangsleistung<br />
erreicht 6 dBm. Für den 18-GHz-VCO wurde ein Phasenrauschen<br />
von -112 dBc für 1 MHz Offset erhalten.<br />
Das aktuelle Design ist ein Fraktional-N Frequenzsynthesizer,<br />
für den sowohl die ausgezeichneten HF-Eigenschaften<br />
der SiGe-Transistoren als auch das hohe<br />
Integrationsniveau durch Verwendung von CMOS-Transistoren<br />
genutzt werden. Der IC des Fractional-N Frequenzsynthesizers<br />
enthält eine vollständige Phase-<br />
Locked-Loop (PLL) zusammen mit einem digitalen<br />
high Frequency siGe MMics for converter<br />
and local oscillator (siMs)<br />
the goal of the SiMs project is to design and test two<br />
local oscillators as monolithic microwave integrated<br />
circuits (MMICs), one for 18.3 GHz and one for 10 GHz<br />
range. these frequencies are common for hardware<br />
applications in space.<br />
the project is conducted by Kayser-threde GmbH,<br />
Munich, as the prime Contractor to the customer eSA,<br />
with IHp, Frankfurt (oder) and IMSt, Kamp- lintfort as<br />
sub-contractors.<br />
the communication market demands broadband<br />
transmission, high density television (HDtV) and interactivity,<br />
whereby HDtV will become the leading<br />
application. All applications require a high number<br />
of individual channels, leading to a large number of<br />
up- and down-converters. these high demands can be<br />
served best with highly integrated SiGe MMICs. therefore,<br />
in this project a local oscillator (lo) synthesizer<br />
was developed and chosen as a demonstrator, because<br />
this RF-element is particularly well suited to prove<br />
the advantages of SiGe technology. the most critical<br />
building blocks of the lo are the voltage controlled<br />
oscillator (VCo) which is challenging in its phase noise<br />
behavior, and the fractional-n divider with its large<br />
influence on phase noise and spurs.<br />
A differential Colpitts oscillator with special varactor-design<br />
was developed to improve the phase noise<br />
performance. the layout is presented in Fig.16. the<br />
phase noise is very good for the 10 GHz VCo with<br />
-119 dBc at 1 MHz offset, and the output power is<br />
about 6 dBm. For the 18 GHz VCo a phase noise of<br />
-112 dBc at 1 MHz offset is obtained.<br />
the current design is a fractional-n frequency synthesizer<br />
taking advantage of the excellent high-frequency<br />
performance of SiGe as well as the integration<br />
potential when using silicon CMoS processing. the<br />
fractional-n frequency synthesizer IC contains the<br />
entire phase-locked-loop (pll) along with the digital<br />
fractional SDM (Sigma Delta Modulator) and a serial<br />
processor interface (SpI). the pll has been designed
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
fraktionalen SDM (Sigma Delta Modulator) und einem<br />
Serial Processor Interface (SPI). Die PLL wurde als<br />
Dual-Loop PLL entworfen, die eine Coarse und eine Fine<br />
Loop besitzt, die mit den entsprechenden Varaktor-Eingängen<br />
des VCO verbunden sind. Abb. 17 zeigt die Architektur<br />
des Lokaloszillators als Blockschaltbild.<br />
Abb. 16: Layout des 10-GHz-VCO mit Umschaltung von Varaktoren.<br />
Fig. 16: layout of the 10 GHz VCo with varactor switching.<br />
In der ersten Version besteht der LO aus zwei MMIC-Chips.<br />
Für den HF-Chip des Lokaloszillators (VCO, Prescaler,<br />
Dual Modulus Divider, und PFD) wurden vorwiegend die<br />
Bipolarelemente der <strong>IHP</strong> SGB25VD SiGe- Technologie verwendet,<br />
wobei für den anderen Chip der PLL (Reference<br />
Divider, Main Divider und Fractional-N Controller) die<br />
digitale Bibliothek der 0,25-µm-CMOS-Technologie des<br />
<strong>IHP</strong> genutzt wurde. Diese Trennung berücksichtigte, dass<br />
der Fractional-N Divider und der Phasen-Detektor voneinander<br />
ausreichend isoliert werden müssen, um Spurs zu<br />
vermeiden. Die gemessenen Phasenrauschwerte des LO<br />
sind nahe der Spezifikation (< 10 dB Unterschied).<br />
Obwohl das vorliegende Synthesizer-Design bereits gute<br />
Werte liefert, wurden die beiden MMIC- Bausteine für<br />
eine zweite LO-Version durch einige Änderungen verbessert.<br />
Insbesondere ist zu nennen, dass der BiCMOS- und<br />
der CMOS-Teil nun in einem Single-Chip-LO integriert<br />
wurden, wobei die <strong>IHP</strong> SGB25VD Technologie verwendet<br />
wurde. Außerdem wird nun eine höhere Referenzfrequenz<br />
(100 MHz statt 33 MHz) verwendet, um mittels einer<br />
größeren Loop-Bandwidth bessere Phasenrauschwerte<br />
zu ermöglichen. Dies erforderte jedoch ein neues Design<br />
für den programmierbaren Main Counter, da nun<br />
die maximale Eingangsfrequenz statt 400 MHz größer<br />
als 1 GHz ist. Der Programm- und Swallow-Counter wurden<br />
deshalb in BiCMOS-ECL entworfen.<br />
as a dual-loop pll featuring a coarse and a fine loop,<br />
which connect to the coarse and fine tuning varactor<br />
inputs of the VCo. the architecture of the local oscillator<br />
is depicted as a block diagram in Fig. 17.<br />
Abb. 17: Blockschaltbild des Lokaloszillators für 18,0-18,5 GHz.<br />
Fig. 17: Block diagram of the 18.0 to 18.5 GHz local oscillator.<br />
In the first version, the lo consists of two MMICs. the<br />
high frequency section of the lo (VCo, prescaler, dual<br />
modulus divider, and pFD) was realized using mainly<br />
the bipolar components of the IHp SGB25VD SiGe<br />
technology, the other part of the pll (reference divider,<br />
main divider, and fractional n controller) has<br />
been realized using the digital library of the 0.25 µm<br />
IHp CMoS technology. this separation takes care of<br />
the critical isolation between the fractional n divider<br />
and the phase detector to avoid spurs. the measured<br />
phase noise values of the lo are close to the specification<br />
(< 10 dB difference).<br />
Although the current synthesizer design is working<br />
quite well, the MMICs are improved in several ways for<br />
the second version of the lo. First of all, the BiCMoS<br />
and the CMoS part are now integrated into a singlechip<br />
lo using the IHp SGB25VD technology. Furthermore,<br />
a higher reference frequency (100 MHz instead<br />
of 33 MHz) is used in order to achieve better phase<br />
noise values by increasing the loop bandwidth. this<br />
however required a new design of the programmable<br />
main counter as the maximum input frequency is now<br />
> 1 GHz instead of 400 MHz. therefore, program and<br />
swallow counter are designed in BiCMoS eCl logic.<br />
A n n u A l R e p o R t 2 0 0 6
Rauscharme Frequenzsynthesizer für OFDM:<br />
Von der Theorie zu Systemen<br />
Integrierte Frequenzsynthesizer für drahtlose Transceiver<br />
stellen eine große Herausforderung dar, weil ihre<br />
Performance oft die Datenrate begrenzt. Der Abstimmbereich<br />
muss relativ groß sein, um Schwankungen der<br />
Bauelementeparameter zu kompensieren. Ein großer Abstimmbereich<br />
erhöht wiederum das Rauschniveau. Des<br />
Weiteren müssen Spulen und Kondensatoren normalerweise<br />
integriert werden, um geringe Kosten zu erreichen.<br />
Das begrenzt den Q-Faktor in spannungsgesteuerten Oszillatoren<br />
und die Größe der Filterkondensatoren in Phase-locked<br />
Loops (PLL). Infolge des relativ starken Phasenrauschens<br />
kann die Bitfehlerrate in OFDM-basierten<br />
drahtlosen Systemen stark beeinträchtigt sein.<br />
In den letzten drei Jahren wurde viel Arbeit geleistet,<br />
um den Einfluss von Phasenrauschen auf OFDM-<br />
Systeme zu modellieren und zu optimieren. In die Beschreibung<br />
von PLL- und VCO-Rauschen im Frequenzbereich<br />
wurden weißes Rauschen, Funkelrauschen und<br />
Substratrauschen einbezogen. Die Standardabweichung<br />
des PLL-Phasenfehlers wurde auf Bauelemente- und<br />
Systemparameter zurückgeführt. Mit Hilfe eines Zeitbereichsmodels<br />
des PLL Phasenrauschens können realistische<br />
Bitfehlerraten mit einem Systemsimulator<br />
simuliert werden. Das verwendete stochastische Modell<br />
basiert auf dem Wienerprozess und dem Ornstein-Uhlenbeck-Prozess,<br />
welche aus der Theorie der optischen<br />
Spektroskopie gut bekannt sind.<br />
2 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
low-noise Frequency synthesizers for<br />
oFdM: From theory to systems<br />
Integrated frequency synthesizers for wireless transceivers<br />
are challenging since their performance often<br />
limits the achievable data rate. the tuning range<br />
has to be relatively large to compensate variations in<br />
the device parameters. A large tuning range, in turn,<br />
increases the noise level. Furthermore, inductances<br />
and capacitors must generally be integrated for low<br />
cost. this limits the quality factor in the voltagecontrolled<br />
oscillator (VCo) and the capacitor size in<br />
the filters of the phase-locked loops (pll). As a result<br />
of the relatively high phase noise, the bit-error rate<br />
(BeR) in oFDM-based wireless systems may be strongly<br />
affected.<br />
During the past three years, a lot of work was carried<br />
out in modeling and optimizing the effect of phase<br />
noise on the performance of oFDM systems. White<br />
noise, flicker noise and noise in the substrate were<br />
included in the frequency-domain description of<br />
pll and VCo noise. the rms phase error (jitter) of a<br />
pll was attributed to device and system parameters.<br />
A time-domain model for pll phase noise was used<br />
to allow realistic bit-error-rate simulations with a<br />
system simulator. the stochastic model used is based<br />
on the Wiener process and the ornstein-uhlenbeck<br />
process, which are well known from theory in optical<br />
spectroscopy.
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Auf der Basis unseres Phasenrauschmodells haben wir<br />
Frequenzsynthesizer für das 60-GHz- und das 24-GHz-<br />
Frequenzband entwickelt. Diese stellen Weltrekorde<br />
bezüglich Geschwindigkeit und Phasenrauschen unter<br />
den siliziumbasierten Synthesizern dar. Abb. 18 zeigt<br />
ein Chip-Photo einer experimentellen PLL für drahtlose<br />
Anwendungen im 60-GHz- und im 24-GHz-Band.<br />
Das Phasenrauschen in einem integrierten 60-GHz-Transceiver<br />
ist extrem wichtig in OFDM-Systemen, da die Bitfehlerrate<br />
stark mit dem Phasenrauschen korreliert ist.<br />
Systemparameter für ein 60-GHz-OFDM-System wurden<br />
vorgeschlagen, die zum Teil auf den BER-Simulationen<br />
beruhen (Abb. 19). Dabei wurde die Rauschfilterung<br />
im Basisband mittels moderner Signalverarbeitung in<br />
dem verwendeten Model berücksichtigt. Unser OFDM-<br />
Systemkonzept wird gegenwärtig zur Aufnahme in einen<br />
IEEE-Standard vorgeschlagen.<br />
Abb. 18: Chipfoto eines integrierten Frequenzsynthesizers für<br />
drahtlose Anwendungen im 60-GHz- und 24-GHz-Band.<br />
Fig. 18: Chip photo of integrated frequency synthesizer for<br />
wireless applications in the 60 GHz and the 24 GHz band.<br />
Based on our phase noise model, frequency synthesizers<br />
for the 60 GHz and the 24 GHz ISM bands have<br />
been developed. they represent world records in<br />
terms of operating frequency and phase noise for silicon-based<br />
synthesizers. Fig. 18 shows a chip photo of<br />
an experimental pll for wireless applications in the<br />
60 GHz and the 24 GHz ISM band.<br />
phase noise in a 60 GHz integrated transceiver is crucial<br />
for oFDM systems, since the BeR is strongly correlated<br />
with the pll phase noise. System parameters<br />
for a 60 GHz oFDM system have been proposed, which<br />
are partly based on BeR simulations as illustrated in<br />
Fig. 19. Here we have included the baseband noise<br />
filtering by state-of-the-art signal processing. our<br />
oFDM system concept is currently actively proposed<br />
for adoption as an Ieee standard.<br />
Abb. 19: Berechnete Standardabweichung des Phasenfehlers der<br />
PLL als Funktion der Loop-Bandbreite für drei OFDM-<br />
Symbollängen.<br />
Fig. 19: Calculated pll jitter as a function of the loop bandwidth<br />
for three oFDM symbol lengths.<br />
A n n u A l R e p o R t 2 0 0 6
Technologieplattform<br />
SiGe-BiCMOS-Technologie für 77 /79 GHz<br />
Auto-Radar (Projekt KOKON)<br />
Im Verbundprojekt KOKON untersuchen deutsche Automobilhersteller<br />
(DaimlerChrysler), Zulieferer, Mikroelektronikfirmen<br />
(Infineon, Atmel) und Forschungsinstitute<br />
gemeinsam die Einsatzfähigkeit von Schaltungen<br />
in SiGe-Technologie für Radarsensoren bei 77 GHz bzw.<br />
79 GHz. Am <strong>IHP</strong> werden dafür als Demonstratorschaltung<br />
für einen Radarsignalgenerator spannungsgesteuerte<br />
Oszillatoren (VCO) mit Leistungsverstärkern<br />
entworfen und hergestellt.<br />
Radarsysteme in modernen Autos erhöhen sowohl<br />
die Sicherheit (Stop-and-go-Funktion, Kollisionswarnung),<br />
als auch den Fahrkomfort (Parkhilfe). Leider<br />
sind heutige Systeme entweder sehr teuer oder wie das<br />
kürzlich eingeführte 24-GHz-System aus frequenz-regulatorischen<br />
Gründen nur Interimslösungen (in der EU<br />
zu ersetzen ab 2013). Eine sinnvolle Alternative sind<br />
Schaltungen in SiGe-Technologie für die zwei Radarvarianten:<br />
• 77 GHz Weitbereichsradar,<br />
• 79 + / - 2 GHz Ultra-Weitband Nahbereichsradar.<br />
Neben den zu erfüllenden technischen Spezifikationen<br />
(möglichst hohe Ausgangsleistung bei niedrigem Phasenrauschen),<br />
werden an die Schaltungen auch hohe Anforderungen<br />
bezüglich Stabilität und Zuverlässigkeit bei<br />
Temperaturen zwischen –40°C und +125°C gestellt.<br />
A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
technology platform<br />
siGe bicMos technology for 77 / 79 Ghz<br />
automotive radar (KoKon project)<br />
Within the BMBF funded project KoKon German automobile<br />
manufacturers (DaimlerChrysler), suppliers,<br />
microelectronics companies (Infineon, Atmel), and<br />
research institutes jointly investigate the capability<br />
of 77 / 79 GHz radar sensors in SiGe technology. At<br />
IHp voltage controlled oscillators (VCo) with output<br />
buffers are to be designed and manufactured as demonstrator<br />
circuits for a radar signal generator.<br />
Radar sensors in modern cars enhance safety (“stopand-go”<br />
function, collision warning) and comfort<br />
(parking aid). unfortunately, today’s systems are either<br />
very expensive or like the 24 GHz system just interim<br />
solutions (to be replaced in the eu from 2013).<br />
promising alternative solutions are circuits in SiGe<br />
technology for two radar variants:<br />
• 77 GHz long range radar,<br />
• 79 + / - 2 GHz short range ultra-wideband radar.<br />
Besides meeting the technical specifications (high<br />
output power but low phase noise) high demands are<br />
also made on temperature stability and system reliability<br />
between –40°C and +125°C.
Abb. 20: Kennlinien zweier VCO mit zwei unterschiedlichen<br />
SiGe HBTs und Ausgangsleistungen bis +15 dBm.<br />
Fig. 20: Characteristics of two VCos with two different<br />
SiGe HBt types showing output power up to +15 dBm.<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Für das <strong>IHP</strong> ergeben sich innerhalb des Projekts folgende<br />
Arbeitsschwerpunkte:<br />
- Entwurf des Oszillators und Optimierung seiner<br />
Kernparameter (anhand der Spezifikationen der<br />
Automobilzulieferer),<br />
- Optimierung der Temperaturstabilität (beispielsweise<br />
möglichst geringe Änderung der Oszillatorschwingfrequenz),<br />
- Untersuchung der Zuverlässigkeit von Halbleiterbauelementen<br />
und der Oszillatorschaltung.<br />
Dabei sollen die Ergebnisse mit denen einer alternativen<br />
SiGe-Bipolartechnologie verglichen werden.<br />
Letztere unterscheidet sich von der des <strong>IHP</strong> in den HBT<br />
Spezifikationen (z.B. andere Grenzfrequenzen), dem<br />
Backend (Al-Metallisierung (<strong>IHP</strong>) zu Kupfer-Metallisierung)<br />
und den passiven Bauelementen (NMOS-Akkumulationsvaraktoren<br />
(<strong>IHP</strong>) als variable Kapazitäten zu<br />
reinen Bipolar-Varaktoren).<br />
there are three priorities for the IHp within the project:<br />
- design of the oscillator and optimization of its<br />
core parameters (according to the specifications<br />
of automotive suppliers),<br />
- optimization of temperature stability (e.g. lowest<br />
possible change of oscillator frequency),<br />
- investigation of device and circuit reliability.<br />
Additionally, these results will be compared with results<br />
of an alternative SiGe bipolar process. this process<br />
differs from the IHp technology by HBt specifications<br />
(e.g. different transit frequencies), backend (Al<br />
(IHp) to Cu metallization), and passive components<br />
(nMoS accumulation (IHp) to bipolar varactors).<br />
0.93 mm<br />
0.85 mm<br />
Abb. 21: Spannungsgesteuerter Oszillator mit zweistufigem<br />
Leistungsverstärker für 77 / 79 GHz Radarsignalgeneratoren.<br />
Fig. 21: Voltage controlled oscillator with two-stage output buffer<br />
for 77 / 79 GHz radar signal generators.<br />
A n n u A l R e p o R t 2 0 0 6
6 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Folgende Resultate konnten im Rahmen des Projektes<br />
bisher erreicht werden:<br />
Für die <strong>IHP</strong> SG25H1 Technologie wurden spannungsgesteuerte<br />
Oszillatoren in differentieller Colpitts-Topologie<br />
entworfen. Die bisherigen Schaltungen liefern mit<br />
einem einstufigen Leistungsverstärker Ausgangsleistungen<br />
je nach gewähltem SiGe-Transistortyp bis zu<br />
+15 dBm [32 mW] (Abb. 20) und ein Phasenrauschen<br />
bei 77 GHz von –90 dBc / Hz @ 1 MHz Offset. In Verbindung<br />
mit einem zweistufigen Leistungsverstärker<br />
(Abb. 21) werden bis zu +18 dBm [63 mW] erwartet.<br />
Damit wird dann die Spezifikation von +16 dBm übertroffen.<br />
Die Anforderungen der Automobilindustrie bezüglich<br />
Temperaturstabilität und Zuverlässigkeit verlangen einen<br />
großen Aussteuerbereich des VCO bzw. eine möglichst<br />
geringe Änderung der Oszillatorfrequenz und<br />
Ausgangsleistung bis 125°C. Der Oszillator in Abb. 20<br />
zeigt einen Aussteuerbereich von 7 GHz. Die Drift<br />
der Oszillatorfrequenz beträgt deutlich weniger als<br />
-2 GHz / 100 K. Diese Werte können durch die Kombination<br />
von SiGe HBT mit den NMOS-Varaktoren des<br />
CMOS-Moduls erreicht werden; es müssen dafür keine<br />
speziellen Bipolarvaraktoren entwickelt und integriert<br />
werden.<br />
Bei Zuverlässigkeitsuntersuchungen an den HBT bei<br />
125°C und sehr hohen Strömen (bis zu 35 mA / µm 2 )<br />
konnte nachgewiesen werden, dass die Hochfrequenzparameter<br />
stabil bleiben. Das weist darauf hin, dass im<br />
Vergleich zur Kupfer-Metallisierung auch die Aluminium-Metallisierung<br />
diesen Anforderungen gewachsen<br />
ist.<br />
the following results were achieved within the project<br />
until now.<br />
Differential voltage controlled oscillators in Colpitts<br />
topology were designed for IHp’s SG25H1 technology.<br />
present differential circuits with single-stage output<br />
buffers deliver output powers up to +15 dBm [32 mW]<br />
(Fig. 20) – depending on the transistor type - and<br />
phase noise levels at 77 GHz of about –90 dBc / Hz<br />
@ 1 MHz offset. For a VCo with a double stage buffer<br />
(Fig. 21) up to +18 dBm [63 mW] are expected. this is<br />
well above the specification of +16 dBm.<br />
the automotive industry‘s demand for sufficient temperature<br />
stability and reliability requires a large tuning<br />
range combined with small changes of oscillator<br />
frequency and output power up to 125°C. the oscillator<br />
in Fig. 20 shows a tuning range of 7 GHz and additionally<br />
an oscillator frequency drift of significantly<br />
less than –2 GHz per 100 K has been measured. these<br />
results were obtained by the combination of SiGe HBt<br />
and the nMoS varactors of the CMoS module; no special<br />
bipolar varactors had to be introduced for this.<br />
With reliability stress tests of the HBts at 125°C and<br />
very high current densities (up to 35 mA / µm 2 ) it was<br />
shown that the high frequency parameters remained<br />
unchanged.<br />
this indicates that like the copper metallization the<br />
aluminium backend copes with these standards.
130-nm-BiCMOS-Technologie<br />
Ziel des Projektes ist die Entwicklung einer Technologie<br />
für integrierte Kommunikationssysteme auf einem Siliziumchip<br />
(System-on-Chip) mit höchsten Datenraten und<br />
Übertragungsfrequenzen. Die 130-nm-BiCMOS-Technologie<br />
wird Basis für die zukünftige technologische Forschung<br />
und für die Untersuchung neuer Schaltungs- und<br />
Systemkonzepte sein. Darüber hinaus wird die Technologie<br />
Forschungs- und Entwicklungspartnern über den<br />
Prototyping-Service des <strong>IHP</strong> zur Verfügung gestellt.<br />
SiGe-BiCMOS-Technologien der nächsten Generation<br />
stellen durch die Integration von HF-Schaltungen im<br />
mm-Wellenbereich mit schnellen Digitalschaltungen<br />
hoher Packungsdichte einen Schlüssel für die kostengünstige<br />
Realisierung integrierter Kommunikationssysteme<br />
mit großer Bandbreite dar. Durch HBTs mit<br />
Grenzfrequenzen oberhalb von 200 GHz werden Anwendungen<br />
wie drahtlose Kommunikation im 60-GHz-Band,<br />
lichtleiterbasierte Kommunikationssysteme mit Datenraten<br />
oberhalb 40 Gbps und automobile Radarsysteme<br />
bei 77 GHz ermöglicht.<br />
Abb. 22: HF-Charakteristik von high-performance HBTs.<br />
Fig. 22: RF characteristics of high-performance HBts.<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
130 nm bicMos technology<br />
the objective of the project is the development of a<br />
technology suitable for system-on-a-chip (SoC) solutions<br />
for wireless and broadband communication at<br />
highest data rates and highest transmission frequencies.<br />
the 130 nm BiCMoS process will be the platform<br />
for future technology research and for the investigation<br />
of new circuit and system concepts. Moreover,<br />
the technology will be available to research and development<br />
partners via the IHp prototyping service.<br />
the integration of mm-wave RF circuits with highspeed,<br />
high-density digital blocks in next generation<br />
SiGe BiCMoS technologies is a key for cost-effective<br />
realizations of high-bandwidth communication systems.<br />
HBts with cut-off frequencies above 200 GHz<br />
facilitate new applications such as wireless links in<br />
the 60 GHz band, fiber optics communication systems<br />
with data rates above 40 Gbps, and automotive<br />
radar at 77 GHz.<br />
Abb. 23: Transferkennlinien von 130 nm NMOS- und<br />
PMOS-Transistoren.<br />
Fig. 23: Transfer characteristics of 130 nm NMOS and<br />
pMoS transistors.<br />
A n n u A l R e p o R t 2 0 0 6<br />
7
8 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Im Jahr <strong>2006</strong> wurde erstmals der vollständige technologische<br />
Ablauf des 130-nm-BiCMOS-Prozesses realisiert.<br />
In der Technologie werden zwei Typen von SiGe-HBTs,<br />
die für hohe Frequenzen bzw. hohe Durchbruchspannungen<br />
optimiert wurden, sowie CMOS-Transistoren mit<br />
zwei Gateoxiddicken für Betriebsspannungen von 1,2 V<br />
und 3,3 V bereitgestellt.<br />
Die HBTs zeichnen sich gegenüber vorangegangenen<br />
Technologiegenerationen u.a. durch selbstjustierte Basis-<br />
und Emittergebiete und durch eine Reduzierung der<br />
Emitterweite auf 120 nm aus. Für die high-performance<br />
HBTs wurden Grenzfrequenzen f T und f max im Bereich von<br />
250-300 GHz realisiert (Abb. 22). Der CMOS-Prozess wurde<br />
für Anwendungen mit geringem Leistungsverbrauch<br />
optimiert. Die 1,2-V-NMOS- und PMOS-Transistoren zeigen<br />
Leckströme von 50 pA / µm und Betriebsströme von<br />
440 bzw. 200 µA / µm (Abb. 23).<br />
Eine Aluminium-Metallisierung mit bis zu sieben Metallebenen<br />
wurde entwickelt. Darunter sind zwei für<br />
HF-Anwendungen optimierte 2 µm bzw. 3 µm dicke<br />
Metallebenen, die die Integration von passiven Komponenten<br />
wie Spulen, Transformatoren und Übertragungsleitungen<br />
hoher Güte ermöglichen.<br />
Die erste Version des Designkit für die 130-nm-BiCMOS-<br />
Technologie wurde <strong>2006</strong> erarbeitet und wird z.Z. für die<br />
Entwicklung von Schaltungen für die Bewertung der<br />
HF-Eigenschaften der Technologie und für die Erstellung<br />
von Bibliotheken für digitale CMOS-Schaltungen<br />
eingesetzt. Die Nutzbarkeit der Technologie für hochintegrierte<br />
Schaltungen wurde durch erste funktionsfähige<br />
4-Mbit-SRAM-Chips demonstriert (Abb. 24).<br />
In <strong>2006</strong>, the full-flow 130 nm BiCMoS process was<br />
realized for the first time. the technology provides<br />
two types of SiGe HBts optimized for high frequencies<br />
and high breakdown voltages, respectively, and CMoS<br />
transistors with two gate oxide thicknesses for operating<br />
voltages of 1.2 V and 3.3 V.<br />
new features of the HBt devices compared to previous<br />
generations are self-aligned base and emitter regions<br />
and minimal emitter widths of 120 nm. Cut-off<br />
frequencies f t and maximum oscillation frequencies<br />
f max in the 250 to 300 GHz range were realized for<br />
the high-performance HBts (Fig. 22). the CMoS process<br />
was optimized for low-power applications. the<br />
1.2 V nMoS and pMoS transistors exhibit off-currents<br />
of 50 pA / µm and on-currents of 440 µA / µm and<br />
200 µA / µm, respectively (Fig. 23).<br />
An aluminum back-end-of-line with up to seven metal<br />
layers was developed. these include two metal layers<br />
with thicknesses of 2 µm and 3 µm facilitating the<br />
integration of passive components such as inductors,<br />
transformers, and transmission lines with high quality<br />
factors.<br />
A first revision of the design kit for the 130 nm BiCMoS<br />
technology was developed in <strong>2006</strong>. It is now used<br />
for designing benchmark circuits for the evaluation<br />
of the RF performance of the technology and digital<br />
CMoS libraries. the capability of the technology for<br />
VlSI circuit fabrication was demonstrated by first fully-functional<br />
4 Mbit SRAM chips (Fig. 24).<br />
Abb. 24: Aufnahme einer SRAM-Zelle (Raster-TEM).<br />
Fig. 24: Scanning transmission electron microscope<br />
image of an SRAM cell.
Kostengünstiger SiGe CBiCMOS Prozess<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Projektziel war es zu prüfen, ob ein kostengünstiger<br />
CBiCMOS-Prozeß realisierbar ist, der mit minimaler Anzahl<br />
an bipolaren Masken- und Prozessschritten ausreichend<br />
gute npn- und pnp-Transistorparameter für ein<br />
breites Spektrum von Anwendungen liefert.<br />
Eine komplementäre BiCMOS-(CBiCMOS-)Technologie,<br />
die npn- und pnp-Transistoren mit ähnlichen Parametern<br />
liefert, ist sehr vorteilhaft und innovativ für eine Vielzahl<br />
analoger Schaltungen. Der ideale CBiCMOS-Prozeß<br />
sollte auf bipolarer Seite npn- und pnp-Transistoren mit<br />
besten HF-Parametern liefern, gleichzeitig aber auch<br />
Transistoren mit höherer Durchbruchsspannung, und<br />
das bei Kosten, die möglichst nicht über denen eines<br />
BiCMOS- oder sogar RF-CMOS-Prozesses liegen. <strong>IHP</strong>’s<br />
erste CBiCMOS-Technologie (SG25H2) bietet ein npn-f T<br />
von 170 GHz und ein pnp-f T von 90 GHz, die beste jemals<br />
erreichte CBiCMOS pnp-Grenzfrequenz. Allerdings wurde<br />
diese Technologie vor allem hinsichtlich bester HF-<br />
Parameter optimiert, ohne allzu große Rücksicht auf die<br />
Prozesskosten. Im Gegensatz dazu bestand die große<br />
Herausforderung dieses Projektes darin, attraktive HF-<br />
Parameter mit einem Prozessfluß zu erhalten, der mit<br />
deutlich weniger bipolaren Masken- und Prozessschritten,<br />
verglichen mit dem Stand der Technik, auskommt.<br />
Um einen einfachen CBiCMOS-Prozeß zu erhalten, wurde<br />
der Prozessablauf des 1-Masken Bipolar-Moduls der<br />
<strong>IHP</strong> npn-BiCMOS-Technologie SGB25VD für die pnp-Herstellung<br />
adaptiert. Außerdem wurde ein zweiter Isolationsgraben<br />
eingeführt, der eine geringere Tiefe aufweist<br />
als der des Basisprozesses. Der flachere Graben<br />
trennt das aktive Transistorgebiet vom Kontaktgebiet<br />
und erlaubt uns, gleichzeitig niedrige Kollektorwiderstände<br />
und Basis-Kollektor-Kapazitäten mit einer einfachen,<br />
Epitaxie-freien Kollektorstruktur zu erreichen<br />
(Abb. 25).<br />
cost-optimized siGe cbicMos process<br />
the objective of this project was to investigate the<br />
feasibility of a cost-optimized SiGe CBiCMoS process,<br />
which provides ample npn and pnp transistor<br />
performance for a wide range of applications, while<br />
utilizing a minimum of dedicated bipolar mask and<br />
processing steps.<br />
A complementary BiCMoS (CBiCMoS) technology containing<br />
both npn and pnp devices with matched performance<br />
offers compelling advantages in many types<br />
of analog circuits. An ideal CBiCMoS process should<br />
provide both npn and pnp devices with best RF performance<br />
on the bipolar side, combined with higher<br />
voltage transistors, but preferably not above the cost<br />
of a BiCMoS or even an RF-CMoS process. IHp`s first<br />
SiGe CBiCMoS technology (SG25H2) combines a 170<br />
GHz f t npn device with a 90 GHz f t pnp transistor demonstrating<br />
a level of pnp RF performance not seen<br />
before. For this unique technology, however, performance<br />
was clearly the priority, while cost was not in<br />
the main focus. the big challenge of this particular<br />
CBiCMoS project was to demonstrate attractive npn<br />
and pnp device performance in a process flow with<br />
a much lower number of dedicated bipolar mask and<br />
processing steps compared to the state-of-the-art.<br />
to obtain a low-cost CBiCMoS process, we adapted the<br />
process sequence applied in the 1-mask, npn-only bipolar<br />
module of IHp’s low-cost npn-BiCMoS process<br />
SGB25VD also for pnp fabrication. Moreover, we introduced<br />
a second shallow trench (SStR) which has<br />
a lower depth compared to the trench of the process<br />
core. the SStR separates the active bipolar transistor<br />
regions from the collector contact regions and allows<br />
us to simultaneously reach low values of collector resistance<br />
(RC) and base-collector capacitance (CBC)<br />
with a simple, epi-free collector structure (Fig. 25).<br />
A n n u A l R e p o R t 2 0 0 6
Abb. 25: REM Querschnittsbilder eines pnp SiGe HBT zur Illustration der benutzten zwei Typen von Isolationsgräben.<br />
Fig. 25: SeM X-sections of a pnp SiGe HBt illustrating the two trench types used.<br />
Folgende Hauptergebnisse des Projektes wurden erreicht:<br />
1) Unter Hinzufügung von nur drei Maskenschritten<br />
zur unterliegenden HF-CMOS-Linie ist ein CBiCMOS-<br />
Prozeß realisierbar, der 3 Typen von npn-Transistoren<br />
(120 GHz f T / 2,1 V BV CEO , 63 GHz f T / 3,5 V BV CEO und<br />
40 GHz f T / 5 V BV CEO ) zusammen mit einem 32 GHz<br />
f T , 35 GHz f max , 4,2 V pnp SiGe HBT liefert.<br />
2) Mit zwei weiteren Implant-Masken, d.h. mit insgesamt<br />
nur 5 Bipolar-Masken können zusätzlich (npn-<br />
Fall) oder alternativ (pnp) zu den Transistoren des<br />
3-Masken-Moduls ein 150 GHz f T , 2,2 V npn HBT und<br />
entweder ein 43 GHz f T , 65 GHz f max , 4,2 V pnp HBT<br />
oder ein 38 GHz f T , 70 GHz f max , 5,8 V pnp HBT hergestellt<br />
werden. Abb. 26 zeigt f T und f max dieser pnp-<br />
Transistoren in Abhängigkeit vom Kollektorstrom.<br />
Abb. 27 vergleicht die pnp HF-Parameter des neuen Prozesses<br />
mit den Daten anderer CBiCMOS-Technologien.<br />
Tabelle 2 bezieht zusätzlich noch die npn HF-Parameter<br />
und die Anzahl der Bipolarmasken als Maß für die Prozesskomplexität<br />
in den Vergleich ein. Es wird deutlich,<br />
dass der neue Prozess hinsichtlich der Kombination von<br />
Prozesskomplexität / -Kosten und erreichbarer HF-Parameter<br />
der komplementären Bipolartransistoren derzeit<br />
unerreicht ist.<br />
0 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
the primary results of this project can be summarized<br />
as follows:<br />
1) With a minimum of only three bipolar mask<br />
adders, the new CBiCMoS process provides 3 types<br />
of npn SiGe devices featuring 120 GHz f t<br />
(at 2.1 V BV Ceo ), 63 GHz f t (3.5 V BV Ceo ), and<br />
40 GHz f t (5 V BV Ceo ), together with a 32 GHz<br />
f t , 35 GHz f max , 4.2 V pnp SiGe HBt.<br />
2) With two additional implant masks, i.e. with only<br />
5 bipolar masks in total, a 150 GHz f t , 2.2 V npn<br />
HBt and either a 43 GHz f t , 65 GHz f max , 4.2 V pnp<br />
or a 38 GHz f t , 70 GHz f max , 5.8 V pnp device can be<br />
fabricated additionally (in the npn case) or alternatively<br />
(pnp case) to the devices of the 3-mask<br />
module. Fig. 26 shows f t and f max vs collector current<br />
for these pnp devices.<br />
Fig. 27 compares the pnp RF data of the new process<br />
with data of other CBiCMoS technologies. table<br />
2 additionally includes npn parameters and the no.<br />
of dedicated bipolar masks as a measure of process<br />
complexity and thus cost. It is obvious that the new<br />
process provides by far today’s best combination of<br />
complexity / cost and RF performance of the complementary<br />
bipolar devices in a fully featured CBiCMoS<br />
process.
parameter IHp (this project) IHp tI IBM Jazz Semi<br />
(f t / f max in GHz, BV Ceo in V) SG25H2 (BCtM03) (SiRF07) (Homepage)<br />
High-BV npn-f / f / BV t max Ceo 40 / 80 / 5 + 63 / 95 / 3.5 - 27 / 90 / 6 29 / 51 / 6 + 38 / 150 / 6 +<br />
45 / 73 / 4.5 78 / 190 / 3.5<br />
low-BV npn-f / f / BV 120 / 110 / 2.1 150 / 160 / 2.2 170/170/1.9 - t max Ceo 60 / 85 / 3.3 155/200/2.2<br />
pnp-f / f / BV t max Ceo 32 / 35 / 4.4 38 / 70 / 5.8 or 90/120/2.5 27 / 60 / 6 28 / 26 / 6 17 / f not max<br />
43 / 65 / 4.2 available / 7<br />
Bipo-mask no. over RF-CMoS 3 5 10 see* >8** >8**<br />
* not simply formed by an integration of a bipolar module in an RF-CMoS baseline<br />
** Mask no. by a rough estimation only<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Abb. 26: f T und f max in Abhängigkeit vom Kollektorstrom für die<br />
pnp-Transistoren, die alternativ mit dem komplementären<br />
5-Masken Bipolar-Modul herstellbar sind.<br />
Fig. 26: f t and f max vs. collector current for pnp transistors which<br />
can be fabricated alternatively in the 5-mask,<br />
complementary bipolar module.<br />
Abb. 27: f T und f max in Abhängigkeit von BV CEO für pnp-Transistoren<br />
verschiedener CBiCMOS-Technologien.<br />
Fig. 27: f t and f max vs. BV Ceo for pnp transistors from different<br />
CBiCMoS technologies.<br />
(1 tI data from BCtM03, 2 IBM data from SiRF07,<br />
3 Jazz data from homepage)<br />
Tabelle 2: Vergleich verschiedener CBiCMOS-Technologien (bzw. npn-BiCMOS-Technologien mit pnp-Option).<br />
table 2: Comparison of CBiCMoS technologies (and npn BiCMoS technologies with a pnp option, respectively).<br />
A n n u A l R e p o R t 2 0 0 6
Zuverlässigkeit von HBTs<br />
Ziel des Projektes ist es, das Degradationsverhalten von<br />
SiGe Heterobipolartransitoren (HBT) in Abhängigkeit<br />
von Strom, Spannung und Temperatur zu untersuchen,<br />
um Maximalparameter festzulegen, die ein ausreichend<br />
gutes Funktionieren über 10 Jahre garantieren.<br />
Die Entwicklung unserer BiCMOS-Technologien findet<br />
durch den Nachweis ihrer Zuverlässigkeit gemäß internationaler<br />
Standards ihren Abschluss. Dabei gibt<br />
es Forschungsbedarf insbesondere zur Zuverlässigkeit<br />
von Höchstgeschwindigkeits-SiGe-HBTs, da auf diesem<br />
Gebiet noch relativ wenig bekannt und kaum etwas publiziert<br />
ist. Die grundlegende Idee ist es dabei, bei Einhaltung<br />
definierter Designregeln eine Lebensdauer von<br />
10 Jahren bei weniger als 0,01 % Ausfällen zu garantieren.<br />
Neben verschiedenen Stresstests mit komplexen<br />
Schaltkreisen, Untersuchungen zur Elektromigration,<br />
zur Oxidstabilität, zur Heißladungsträgerinjektion u.<br />
a., ist die Bestimmung der Zuverlässigkeit von HBT-<br />
Strukturen von zentraler Bedeutung.<br />
Mit der SG25H1-Technologie präparierte npn200-Transistoren<br />
wurden in unserem Intrinsic-Testsystem MIRA<br />
von QualiTau bei Temperaturen von 60 °C, 125 °C, und<br />
150 °C mit Emitterströmen (I E ) von 0,7 bis 10 mA bei<br />
Kollektor-Basis-Spannungen (V CB ) zwischen 0 und 3 V<br />
gestresst. In definierten Intervallen wurden Gummel-<br />
Plots bei Stresstemperatur und V CB = 0 V mit V BE zwischen<br />
0,2 und 1,0 V gemessen (siehe Abb. 28). Die<br />
Degradation der Stromverstärkung Beta = I C / I B wird bei<br />
verschiedenen Werten von V BE betrachtet, wobei 10 %<br />
Degradation als Fehlerkriterium definiert wird.<br />
2 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
reliability of hbts<br />
The objective of the project is to characterize the degradation<br />
behavior of SiGe heterobipolar transistor<br />
(HBT) structures as a function of current, voltage, and<br />
temperature to define maximum allowed parameters to<br />
guarantee 10 years of sufficient operation.<br />
The final point in the development of our BiCMOS technologies<br />
is the proof of their reliability according to<br />
international standards. This requires the basic understanding<br />
of different degradation mechanisms. There is<br />
a strong research demand especially for the reliability<br />
of high speed SiGe HBTs, since there is still little known<br />
on this field and nearly nothing has been published so<br />
far. The general idea of technology qualification is to<br />
guarantee a lifetime of ten years with less than 0.01 %<br />
failures under defined design rules. Besides different<br />
stress tests of complex circuits, tests for electromigration,<br />
gate oxide integrity, hot carrier injection and<br />
others, it is of fundamental importance to characterize<br />
the reliability of HBT structures.<br />
For this purpose, we stressed npn200 transistors pre-<br />
pared with the SG25H1 technology at temperatures of<br />
60 °C, 125 °C, and 150 °C with emitter currents (I E ) between<br />
0.7 and 10 mA and collector base voltages (V CB )<br />
between 0 and 3 V in our intrinsic reliability test system<br />
MIRA from QualiTau. Gummel plots were measured after<br />
defined stress sequences at stress temperature with<br />
V CB = 0 V in a V BE range from 0.2 to 1.0 V (see Fig. 28).<br />
Degradation parameter is the current gain Beta = I C / I B<br />
at a given V BE value. The typical failure criterion is a 10 %<br />
degradation of Beta.
Abb. 28: Gummel-Plots (links), Beta vs. V BE (mitte) und über<br />
9 Transistoren gemittelte relative Beta-Degradation<br />
vs. Stresszeit (rechts) unter Stressbedingungen<br />
V CB = 2,0 V , I E = 2,5 mA und T = 60 °C.<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Die in Abb. 28 gezeigte Zeitabhängigkeit der Degradation<br />
von Beta ist so nur für schwachen und mittleren<br />
Stress typisch. Bei höheren Emitterströmen oder V CB -<br />
Werten beobachtet man eine Sättigung der Degradation<br />
und anschließende Abnahme mit zunehmender<br />
Stresszeit. Dies ist die Folge zweier konkurrierender<br />
Mechanismen. Für die Sättigung der Beta-Degradation<br />
oder gar die Umkehr des Degradationstrends sind<br />
Auf- und Entladungsprozesse im Isolationsmaterial<br />
zwischen Emitter und Basis, hervorgerufen durch heiße<br />
Ladungsträger, verantwortlich.<br />
Als Beispiel für den Einfluss von V CB auf das Degradationsverhalten<br />
zeigt Abb. 29 für verschiedene V BE die<br />
mittlere Lebensdauer für eine 10 %-ige Beta-Degradation<br />
bei I E = 2,5 mA und T = 60 °C. Die Degradation ist<br />
deutlich stärker bei niedrigen V BE -Werten und nimmt mit<br />
V CB zu. Die auf eine Lebensdauer von 10 Jahren extrapolierten<br />
Linien für V BE = 0,6 – 0,95 V in der Darstellung<br />
der Lebensdauer vs. V CB schneiden sich alle bei etwa<br />
V CB = 1,2 V. Das bedeutet, dass unabhängig von V BE unter<br />
diesen Stressbedingungen für V CB < 1,2 V eine Lebensdauer<br />
von 10 Jahren garantiert werden kann.<br />
Fig. 28: Gummel plots (left), Beta vs. V Be (middle) and relative<br />
Beta degradation (averaged over nine devices) vs. stress<br />
time (right) under stress conditions<br />
V CB = 2.0 V, I e = 2.5 mA, and t = 60 °C.<br />
the time dependence of Beta degradation shown in<br />
Fig. 28 is typical for weak and medium stress conditions<br />
only. At higher emitter currents or higher<br />
V CB values, we observe that the degradation reaches<br />
a maximum and starts to decrease with increasing<br />
stress time. this is caused by the competition of two<br />
different mechanisms. Charging and discharging processes<br />
in the isolation material between emitter and<br />
base caused by hot carriers are responsible for the saturation<br />
and even the reversal of Beta degradation.<br />
As an example for the role of V CB , Fig. 29 shows for different<br />
V Be the mean time to failure (mean lifetime) for<br />
10 % Beta degradation at I e = 2.5 mA and t = 60 °C.<br />
the degradation is significantly stronger at low V Be<br />
values, and it increases with V CB . the lines extrapolated<br />
for V Be = 0.60 - 0.95 to a lifetime of 10 years in<br />
the MttF vs. V CB plot all cross at about V CB = 1.2 V. this<br />
means that independent of the V Be value it is possible<br />
to guarantee a lifetime of ten years for V CB < 1.2 V<br />
under these stress conditions.<br />
A n n u A l R e p o R t 2 0 0 6
Abb. 29: Mittlere Lebensdauer (MTTF) für 10 % Beta-Degradation<br />
vs. V BE für unterschiedliche V CB -Werte (links) und vs.<br />
V CB für verschiedene V BE -Werte (rechts) nach Stress<br />
mit I E = 2,5 mA bei T = 60 °C.<br />
A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Das Degradationsverhalten im gesamten V CB – V BE – I E<br />
– T-Parameterraum ist sehr komplex. So ist es z.B. möglich,<br />
dass abhängig von den anderen Parametern die<br />
Degradation von Beta mit der Temperatur zu- oder abnehmen<br />
kann. Das Verstehen und Modellieren dieses<br />
komplexen Verhaltens ist Gegenstand weiterer Untersuchungen.<br />
the degradation behavior in the whole V CB – V Be – I e<br />
– t parameter space is rather complex. thus it is for<br />
example possible that the degradation of Beta increases<br />
or decreases with temperature depending on the<br />
other parameters. the understanding and modeling<br />
of this complex behavior is subject of further investigation.<br />
Fig. 29: Mean time to failure (MttF) of 10 % Beta degradation<br />
vs. V Be for different V CB values (left) and vs. V CB for<br />
different V Be values (right) at I e = 2.5 mA and t = 60 °C<br />
stress.
Materialien für die Mikro- und Nanoelektronik<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Modellierung der quadratischen Spannungsabhängigkeit<br />
von Hoch-k-MIM-Kondensatoren<br />
Die Einführung von Hoch-k-Dielektrika in Metall-Isolator-Metall-Kondensatoren<br />
(MIM) zur Flächenreduzierung<br />
erregt viel Aufmerksamkeit. Das Erreichen einer<br />
ausreichenden Kapazitäts-Spannungs-Linearität in<br />
Hoch-k-MIM-Kondensatoren ist immer noch eine Heraus-<br />
forderung.<br />
Die Ursache des nichtlinearen Kapazitäts-Spannungs-<br />
Verhaltens C(V) von MIM-Kondensatoren mit Al 2 O 3 -,<br />
Y 2 O 3 -, HfO 2 - oder Pr 2 Ti 2 O 7 -Dielektrika wurde untersucht.<br />
Basierend auf dem elektrooptischen Kerr-Effekt, wurde<br />
ein physikalischer Ausdruck für den quadratischen<br />
Spannungskoeffizienten α abgeleitet.<br />
Materials for Micro- and nanoelectronics<br />
Modeling the Quadratic Voltage dependence<br />
of high-k MiM capacitors<br />
the introduction of high-k dielectrics into Metal-<br />
Insulator-Metal (MIM) capacitors to reduce the area<br />
attracts much attention. nevertheless, it is still a<br />
challenge to achieve sufficient capacitance voltage<br />
linearity in high-k MIM capacitors.<br />
the origin of the nonlinear capacitance-voltage<br />
behavior of MIM capacitors with Al 2 o 3 , Y 2 o 3 , Hfo 2 or<br />
pr 2 ti 2 o 7 dielectrics is investigated. Based on the electro-optical<br />
Kerr effect, a physical expression for the<br />
quadratic voltage coefficient α is derived.<br />
Abb. 30: C(V)-Kurven von MIM Kondensatoren verschiedener<br />
Dielekrika mit 20 – 30 nm Schichtdicke.<br />
Die durchgezogenen Linien repräsentieren das Modell.<br />
Fig. 30: C(V) curves of MIM capacitors for different dielectrics with<br />
thicknesses of 20 – 30 nm. the solid lines represent the model.<br />
A n n u A l R e p o R t 2 0 0 6
6 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Die gemessenen C(V)-Kurven ausgewählter Hoch-k-Materialien<br />
und die entsprechenden Anpassungen, repräsentiert<br />
durch die Linien, sind in Abb. 30 dargestellt.<br />
Mit Hilfe der erhaltenen intrinsischen Parameter ist es<br />
mittels des Modells möglich, die kritische Schichtdicke<br />
für jedes Hoch-k-Material zu bestimmen, bei der α kleiner<br />
als der erforderliche Wert von 100 ppm / V 2 bleibt.<br />
Mit Kenntnis der kritischen Schichtdicke ist es ebenfalls<br />
möglich, die maximal mögliche Kapazitätsdichte<br />
für die Hoch-k-Materialien zu berechnen. In Abb. 31 ist<br />
dargestellt, wie die kritische Kapazitätsdichte mit der<br />
Dielektrizitätskonstante wächst. Kapazitätsdichten von<br />
3-4 fF / µm 2 können durch den Gebrauch von Hoch-k-<br />
Materialien anstelle von SiO 2 erreicht werden, und die<br />
Kondensatorfläche kann um einen Faktor 2 reduziert<br />
werden.<br />
the measured C(V) curves of selected high-k dielectrics<br />
and the corresponding fits, represented by the<br />
lines, are shown in Fig. 30. By using the determined<br />
intrinsic parameters, the model is capable to provide<br />
the critical thickness of the high-k material. thereby,<br />
α is fixed to the required value of 100 ppm / V 2 . With<br />
the knowledge of the critical thickness, it is also possible<br />
to calculate the maximum capacitance density<br />
with α-values smaller than 100 ppm / V 2 . As shown<br />
in Fig. 31, the critical capacitance density increases<br />
with the dielectric constant. Capacitance densities of<br />
3-4 fF / µm 2 can be achieved by using high-k materials<br />
instead of Sio 2 . therefore, the capacitor area can<br />
be reduced by a factor of 2.<br />
Abb. 31: Berechnete kritische Kapazitätsdichten als Funktion<br />
der Dielektrizitätskonstanten bei α = 100 ppm / V 2 .<br />
Fig. 31: Calculated critical capacitance density as a function<br />
of k-values with α = 100 ppm / V 2 .<br />
[1] J. e. Babcock et al., Ieee eDl 22, 230-233, (2001).<br />
[2] S.-Y. Yun et al., Apl 82 2874-2876, (2003).
Hoch-k-PrAlO 3 auf TiN-bedecktem Si(001)<br />
und Grenzflächenreaktion<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
In der Arbeit wurden PrAlO 3 / TiN auf Si(001) und der<br />
Einfluss von Defekten auf die Leckstromdichte in diesem<br />
Material für die Anwendung in der nächsten Generation<br />
von Halbleiterbauelementen untersucht.<br />
Die fortschreitende Verkleinerung mikroelektronischer<br />
Bauelemente erfordert Isolatoren mit höherer dielektrischer<br />
Konstante k. Der Austausch von SiO 2 durch ein<br />
alternatives Hoch-k-Material erzeugt eine Reihe von Defekten<br />
an den Grenzflächen, welche die dielektrischen<br />
Schichteigenschaften beeinflussen. Das Verstehen der<br />
Thermodynamik und Kinetik des Schichtwachstums<br />
während der Herstellung des Hoch-k-Stapels ist wesentlich,<br />
um die Grenzschichten atomar zu kontrollieren<br />
und die Zahl der Defekte zu minimieren.<br />
Diese Arbeit ist darauf gerichtet, den Einbau von Verunreinigungen<br />
in Hoch-k-Schichten zu untersuchen und<br />
zu vermeiden.<br />
Die Wechselwirkung zwischen dem Substrat und der<br />
Schicht kann leicht zur Bildung schädlicher Defekte<br />
führen, manchmal mit makroskopischem Charakter.<br />
Diese Tendenz kann durch Oberflächenkontamination<br />
und / oder Stöchiometrieschwankungen unterstützt<br />
werden. Wir haben mikroskopische Eigenschaften<br />
(elektrische Aktivität und Formationsenergie) von<br />
Punktdefekten im PrAlO 3 -Dielektrikum untersucht. Es<br />
wurde gefunden, dass die Kontamination durch Sauerstoff<br />
und TiO aus der Schicht zwischen PrAlO 3 und TiN<br />
(Abb. 32) und / oder Wasser (PrAlO 3 ist schwach hygroskopisch)<br />
(Abb. 33) ein Problem im Praseodymaluminat<br />
darstellen können.<br />
Die Zugabe von Al 2 O 3 stabilisiert die Schicht in ihrer<br />
amorphen Struktur und scheint das multivalente Verhalten<br />
von Pr zu unterdrücken.<br />
high-k pralo 3 on tin covered si(001) and<br />
interfacial reaction<br />
the work was done to investigate prAlo 3 / tin on<br />
Si(001) with regard to the influence of defects on the<br />
leakage current density in next generation semiconductor<br />
devices.<br />
the proceeding scaling of microelectronic devices<br />
requires insulator layers with a higher dielectric<br />
constant k. the substitution of Sio 2 by an alternative<br />
high-k material creates a series of defects at the<br />
interfaces which influence the dielectric properties<br />
of the film. understanding the thermodynamics and<br />
kinetics of film growth during fabrication of high-k<br />
gate stacks is vital to establish atomic level control<br />
of interfacial layers and to minimize the number of<br />
defects.<br />
the paper is directed to explore and avoid the incorporation<br />
of impurities into the dielectric high-k layer.<br />
the interaction between the substrate and the film<br />
may readily lead to the formation of detrimental<br />
defects: point defects as well as extended defects,<br />
sometimes of true macroscopic character. this tendency<br />
may be enhanced by surface contamination<br />
and / or local variations in stoichiometry. We analyzed<br />
the microscopic properties (electrical activity<br />
and formation energies) of major point defects in<br />
prAlo 3 dielectrics. We found that contamination with<br />
oxygen and tio coming from tiox interlayer between<br />
prAlo 3 and tin (Fig. 32) or / and water (hygroscopicity<br />
of prAlo 3 ) (Fig. 33) is a problem in the case of<br />
pr 2 o 3 / Al 2 o 3 alloying.<br />
the addition of Al 2 o 3 to pr 2 o 3 stabilizes the film in its<br />
amorphous structure and seems to suppress the multivalent<br />
behavior of pr.<br />
A n n u A l R e p o R t 2 0 0 6<br />
7
Der Leckstrom ist nach dem Tempern über 700°C unabhängig<br />
von der Ausheizart (z.B.: schnelles Heizen<br />
[RTA] oder bei konventionellem Ofenheizen) signifikant<br />
erhöht. Wir argumentieren, dass die Wechselwirkung<br />
zwischen der PrAlO 3 Schicht und dem TiN Substrat<br />
(Abb. 32) so genannte „Hot Spots“ verursacht, welche<br />
mit der Anwesenheit von TiAl+ Donatoren verbunden<br />
sind. Wir erwarten, dass durch das Ausheizen über 700 °C<br />
in der Umgebung der Zwischenschicht zu TiN Donatoren<br />
in höherer Konzentration erzeugt werden und dabei<br />
vorzugsweise in der Region in der ein Überschuss von<br />
Pr-Oxiden und eine hohe Konzentration von Volumendefekten<br />
vorliegt.<br />
Abb. 32: Schichtstruktur von PrAlO 3 / TiN auf Si(001) TiO 2 / TiNO x<br />
bzw. Hydroxid an den Grenzen von PrAlO 3 .<br />
Fig. 32: layered structure of prAlo 3 / tin on Si(001).<br />
tio 2 / tino x and hydroxide flank the prAlo 3 layer.<br />
8 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
the leakage current is significantly increased if the<br />
anneal takes place at temperatures higher than 700 °C,<br />
independent of the annealing method (i.e. by rapid<br />
thermal anneal or by using a conventional oven). We<br />
argue that the interaction between prAlo 3 film and<br />
the tin substrate (Fig. 32) causes the formation of<br />
hot spots which are possibly associated with the presence<br />
of tiAl+ donors. We expect that annealing at<br />
temperatures above 700 °C produces these donors at<br />
a high concentration in the vicinity of the interface<br />
with tin and preferably in regions where there is an<br />
excess of pr oxide and a high concentration of open<br />
volume defects.<br />
Praseodymium Oxygen / Sauerstoff<br />
Abb. 33: OH-Gruppen, eingebaut in einer Pr 2 O 3 -Matrix:<br />
auf Zwischengitterplätzen als (OH) I - und im Gitter<br />
als (OH) O + .<br />
Fig. 33: oH groups trapped in pr 2 o 3 matrix:<br />
interstitial (oH) I - and substitutional (oH) o + .
Halbleiter/Isolator/Halbleiter Heterostrukturen<br />
hoher Qualität: Grenzflächenund<br />
Gitteranpassungsansätze<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Ziel des Projektes ist die globale bzw. lokale Integration<br />
neuer Materialien in die Silizium-Technologieplattform,<br />
um durch die Verfügbarkeit alternativer Halbleiterschichten<br />
geeigneter Qualität die Funktionalität<br />
und Leistung der Si-basierten Schaltkreistechnologie<br />
weiter auszubauen.<br />
Halbleiter-basierte integrierte Schaltkreise werden bis<br />
zum heutigen Tage hauptsächlich in monolithischen<br />
Materialien angefertigt, deren Gitterkonstanten von der<br />
Natur vorgegeben sind. Da die Materialeigenschaften<br />
selbstverständlich für die Leistungsfähigkeit der Schaltkreise<br />
wichtig sind, entwickelten sich in der Vergangenheit<br />
je nach Anwendung verschiedene Halbleitermaterialien<br />
als Plattform für verschiedene Technologien.<br />
Die Silizium-Technologie ist ohne Zweifel dominant auf<br />
dem Halbleitermarkt und entwickelt sich aufgrund des<br />
wachsenden Bedarfs an digitaler Prozessierung rasant<br />
weiter. In optoelektronischen Anwendungen nahe der<br />
870-nm-Wellenlänge wiederum ist das ternäre Halbleitersystem<br />
AlGaAs auf GaAs-Substraten führend. Und<br />
für die Telekommunikation wächst z. Z. der Bedarf an<br />
InP-Einkristallscheiben, da hierauf InGaAsP-Schichten<br />
gitterangepasst erzeugt werden können. Letzteres<br />
Materialsystem besitzt hervorragende Emissionseigenschaften<br />
im Bereich der Wellenlängen 1,3 und 1,55 µm,<br />
die für die Signalverarbeitung via optische Fasersysteme<br />
mit niedrigem Verlust von hoher Bedeutung sind.<br />
Heutzutage ist folglich nur sehr selten aufgrund dieser<br />
Trennung der Substratplattformen eine Interaktion<br />
zwischen der Silizium- und der III-V- (als auch mit der<br />
aufkommenden II-VI) Halbleiterwelt zu beobachten.<br />
towards high-quality semiconductor /<br />
insulator / semiconductor – heterostructures:<br />
interface & lattice engineering<br />
the project goal is the global and / or local integration<br />
of new valuable semiconductor materials in the silicon<br />
technology platform to extend the performance<br />
and functionality of silicon based integrated circuits<br />
(ICs) by the availability of high quality alternative semiconductor<br />
layers with appropriate properties.<br />
Semiconductor-based integrated circuits (ICs) are<br />
built – to date on monolithic materials, mainly with<br />
lattice constants defined by nature. As the properties<br />
of the materials are important for the performance<br />
of the electronic circuitry, different semiconductor<br />
materials became the technology platform of choice<br />
for the various, targeted applications. Si technology<br />
is undoubtedly the dominant semiconductor market<br />
driven by the thirst for digital processing capability.<br />
In applications involving optoelectronics near the<br />
870 nm wavelength, the AlGaAs alloy system on GaAs<br />
is widely employed. And for telecommunications, Inp<br />
substrates became the bulk semiconductor platform,<br />
as InGaAsp can be grown lattice matched to achieve<br />
the desired 1.3 and 1.55 µm wavelength emission<br />
required for low-loss transmission in optical fibers.<br />
today, an interaction between the mature Si and the<br />
rapidly evolving III-V (as well as the upcoming II-VI)<br />
semiconductor worlds can be rarely observed, certainly<br />
due to the processing of the various technologies<br />
with their targeted applications on different semiconductor<br />
platforms.<br />
A n n u A l R e p o R t 2 0 0 6
Abb. 34: Transmissionselektronenmikroskopie (TEM) –<br />
Studie entlang des Si Azimuts des<br />
epi-Si 0,5 Ge 0,5 / (Y 2 O 3 ) 1-x (Pr 2 O 3 ) x (x=0,5 bis 0,75 ) /<br />
Si(111) Systems: (a) Übersicht; (b) Grenzflächen;<br />
(c) Heteroepitaktische Stapelfolge (siehe Text).<br />
60 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Die Vision auf dem Forschungsgebiet der „Engineered<br />
Wafer Systems“ ist die Steigerung der Funktionalität<br />
und / oder Leistungsfähigkeit integrierter Schaltkreise<br />
durch die Überwindung dieser Trennung der elektronischen<br />
Systeme, die historisch bedingt ist, durch die<br />
Verfügbarkeit der verschiedenen Substrate. Die Hauptforschungsrichtung<br />
am <strong>IHP</strong> ist die monolithische Integration<br />
gitterangepasster bzw. gitterfehlangepasster<br />
alternativer Halbleiter in die Silizium-Plattform, da<br />
diese die reifste und daher auch kommerziell dominierende<br />
Technologie darstellt. Methodisch konzentriert<br />
sich der Forschungsansatz auf die Abscheidung ein-<br />
kristalliner Puffer- und alternativer Halbleiterschichten<br />
mittels der Heteroepitaxie, da neben der Flexibilität<br />
diese Technik eine v.a. kosteneffektive Integration in<br />
die Halbleitertechnologie eröffnet.<br />
the vision of engineered wafer systems is to increase<br />
the functionality and / or performance of integrated<br />
circuits by overcoming these limitations of electronic<br />
systems, brought about by the historical separation<br />
of the different semiconductor platforms. the main<br />
research objective at the IHp is the monolithic integration<br />
of lattice matched or mismatched alternative<br />
semiconductor thin film materials on the mainstream<br />
silicon platform, as the latter is the most mature and<br />
in consequence the commercially most dominant semiconductor<br />
technology worldwide. thereby, the film<br />
deposition method of choice in this research project<br />
is focused on the integration via heteroepitaxy by<br />
the subsequent deposition of single crystalline buffer<br />
and alternative semiconductor layers on the silicon<br />
wafer. this method offers besides the high flexibility<br />
to address in principle global as well as local integration<br />
approaches the important advantage to be appropriate<br />
for achieving the cost-effective integration<br />
of alternative semiconductor materials in the silicon<br />
technology platform under conventional cleanroom<br />
conditions.<br />
Fig. 34: transmission electron Microscopy (teM) Study along<br />
the Si azimuth of the epi-Si 0.5 Ge 0.5 /<br />
(Y 2 o 3 ) 1-x (pr 2 o 3 ) x (x=0.5 to 0.75) / Si(111) system:<br />
(a) overview image; (b) interface study;<br />
(c) heteroepitaxial stacking configuration (see text).
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Der patentierte <strong>IHP</strong>-Ansatz besteht in der Erzeugung<br />
von einkristallinen, ternären (A 2 O 3 ) 1-x (B 2 O 3 ) x<br />
(x = 0 bis 1) Mischoxidpuffern auf Silizium-Substraten.<br />
Die 100 %ige Mischbarkeit der Oxidkomponenten<br />
A 2 O 3 und B 2 O 3 ist gewährleistet, da beide in der Ia-3<br />
Kristallstruktur kristallisieren. Aufgrund der weiten<br />
Verbreitung dieser A 2 O 3 -Oxidstruktur über das Periodensystem<br />
ergibt sich eine hohe Flexibilität bei der Integration<br />
von Heterostrukturen mit funktionalen Halbleiterschichten<br />
in Bezug sowohl auf die Gitteranpassung<br />
als auch auf das Maßschneidern von Grenzflächenenergien.<br />
Diese Eigenschaften sind von zentraler Bedeutung<br />
für das Züchten funktionaler Halbleiterschichten<br />
auf dem Puffer mit geschlossener Filmstruktur und hoher<br />
einkristalliner Güte. Zur Demonstration sei die Integration<br />
von SiGe-Schichten hohen Ge-Anteils mittels<br />
(Y 2 O 3 ) 1-x (Pr 2 O 3 ) x -Mischoxiden auf Si(111) betrachtet.<br />
TEM-Studien sind in Abb. 34 für das<br />
epi-Si 0,5 Ge 0,5 / (Y 2 O 3 ) 1-x (Pr 2 O 3 ) x (x = 0,5 bis 0,75) / Si(111)-<br />
System gezeigt. Abb. 34(a) demonstriert die geschlossene<br />
epi-Si 0,5 Ge 0,5 (111) Schicht mit atomarer Rauhigkeit.<br />
Abb. 34(b) zeigt die amorphe Grenzfläche (IF)<br />
zwischen Oxidpuffer und Si(111), die zur Isolation<br />
durch thermische Behandlung nach der Oxid-Epitaxie<br />
erzeugt wird. Die hoch auflösende TEM-Studie 34(c) bezeugt<br />
anhand der Pfeile die für eine Typ A / Typ B / Typ<br />
A Epitaxie typische Stapelfolge. Detaillierte synchrotronbasierte<br />
Röntgenstudien erfolgten an der European<br />
Synchrotron Radiation Facility (E.S.R.F) in Frankreich<br />
zur Verifikation der hier skizzierten Ergebnisse an<br />
epi-Si 1-y Ge y (y = 0 bis 1) / (Y 2 O 3 ) 1-x (Pr 2 O 3 ) x (x = 0 bis 1) / Si(111)<br />
Systemen.<br />
the patented IHp materials science approach consists<br />
of the growth of single crystalline, ternary<br />
(A 2 o 3 ) 1-x (B 2 o 3 ) x mixed oxide buffers on silicon substrates.<br />
Mixed oxide buffers with stoichiometries<br />
varying over the full range from x = 0 to 1 can be<br />
prepared due to the fact that both oxide components<br />
crystallize in the Ia-3 crystal structure. As this A 2 o 3<br />
oxide structure type is quite widespread over the<br />
periodic system of elements, the approach offers a<br />
high flexibility for the integration of functional semiconductor<br />
layers by adjusting the lattice dimension<br />
as well as by tailoring the interface energy of the<br />
oxide buffer. these properties are of central importance<br />
for achieving the integration of valuable semiconductor<br />
layers of closed film morphologies and<br />
of high single crystalline quality. the integration of<br />
SiGe films with high Ge content via (Y 2 o 3 ) 1-x (pr 2 o 3 ) x<br />
buffers on Si(111) is discussed in the following to<br />
demonstrate the feasibility of the approach. Fig.<br />
34 summarizes cross section teM studies of the<br />
epi-Si 0.5 Ge 0.5 / (Y 2 o 3 ) 1-x (pr 2 o 3 ) x (x = 0.5 to 0.75) / Si(111)-<br />
system. Fig. 34(a) shows an overview, confirming the<br />
growth of a closed epi-Si 0.5 Ge 0.5 layer with roughness<br />
limited to the atomic scale. Fig. 34(b) shows an amorphous<br />
interface (IF) between the oxide and Si(111),<br />
prepared after the oxide epitaxy step by post deposition<br />
annealing to improve the electrical properties.<br />
the high-resolution study in Fig. 34(c) illustrates by<br />
dashed arrows the stacking configuration, typical for<br />
type A / type B / type A epitaxy. Detailed Synchrotron<br />
based X-ray diffraction studies at the european Synchrotron<br />
Radiation Facility (e.S.R.F) in France were<br />
applied to verify the here sketched results on the epi-<br />
Si 1-y Ge y (y = 0 bis 1) / (Y 2 o 3 ) 1-x (pr 2 o 3 ) x (x = 0 bis 1) / Si(111)<br />
systems.<br />
A n n u A l R e p o R t 2 0 0 6<br />
6
Si-basierte Nanostrukturen für neue<br />
Bauelementeanwendungen<br />
62 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Si-basierte Nanostrukturen besitzen interessante Eigenschaften,<br />
die für zukünftige Anwendungen in der<br />
Elektronik, Optik, Photovoltaik usw. von Bedeutung<br />
sind. Hier berichten wir über Untersuchungen (a) an<br />
multiplen Stapeln aus alternierenden Si- und SiO 2-<br />
Schichten (MQWs = Multi-Quantum-Wells) und (b) an<br />
Si-Nanodrähten (NWs = Nano-Wires).<br />
(a) Die Si / SiO 2 -MQWs haben wir von der RWTH Aachen<br />
erhalten. Sie wurden mit plasmagestützter CVD abgeschieden,<br />
wobei die Dicke der a-Si-Schichten zwischen<br />
2 und 5 nm variiert wurde und die SiO 2 -Schichten eine<br />
Dicke von 3 nm aufwiesen. Der Einfluss von Wärmebehandlungen<br />
(Ofen, RTA, Laser) und Substratmaterialien<br />
(Quarz, Saphir) auf das Kristallisationsverhalten der Si-<br />
Schichten wurde analysiert.<br />
Dabei zeigt z.B. die Mikro-Raman-Spektroskopie, dass<br />
Si-Nanokristalle, die bei RTA entstehen, stark verspannt<br />
sind. Weiterhin wird die metastabile Si-III-Phase gebildet.<br />
Anschliessende Laserbehandlungen reduzieren<br />
die Druckspannung erheblich. Aus PL-Untersuchungen<br />
geht hervor, dass die elektronische Bandlücke mit sinkender<br />
Dicke der Si-Schichten zunimmt, siehe Abb. 35.<br />
Somit erlauben diese MQWs eine kontrollierte Steuerung<br />
der Bandlücke und sind Kandidaten für neue Sibasierte<br />
Tandem-Solarzellen mit sehr hoher Effizienz.<br />
si-based nanostructures for novel device<br />
applications<br />
Si-based nanostructures offer interesting features<br />
for future applications in electronics, optics, photovoltaics,<br />
etc. Here, we report our observations (a)<br />
on multiple quantum wells (MQWs) consisting of alternating<br />
Si and Sio 2 layers and (b) on Si nanowires<br />
(nWs). the objective is to obtain a deeper insight in<br />
such nanostructures which will help to engineer their<br />
properties.<br />
(a) Stacks of Si / Sio 2 MQWs were provided by RWtH<br />
Aachen. they were deposited by remote plasma enhanced<br />
CVD, with a-Si layer thickness ranging from<br />
2-5 nm and Sio 2 -layer thickness of 3 nm. the influence<br />
of thermal treatments (furnace, RtA, laser) and<br />
substrate materials (quartz, sapphire) on Si crystallization<br />
was analyzed.<br />
For example, micro-Raman investigations showed<br />
that Si nanocrystals formed after RtA are under high<br />
residual stress. Moreover, the metastable Si III phase<br />
was detected. the compressive stress could be<br />
relaxed considerably upon laser annealing. From pl<br />
observations we deduce an increase of the bandgap<br />
with decreasing thickness of the Si layer (Fig. 35).<br />
Accordingly, such MQWs structures are candidates for<br />
bandgap engineering which may allow to realize novel<br />
Si based tandem solar cells with high efficiency.
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
(b) Die Si-NWs mit einem Durchmesser von ca. 20 nm<br />
wurden durch thermische Verdampfung von SiO hergestellt<br />
und uns von der Zhejiang Universität in Hangzhou,<br />
China bereitgestellt. Sie wurden mit Lumineszenzverfahren<br />
untersucht (PL und CL).<br />
Die Spektren weisen eine Reihe von Linien auf, die auf<br />
ausgedehnte Kristalldefekte innerhalb der Si-NWs, auf<br />
die Grenzfläche zwischen dem Si-Kern und der SiO 2 -<br />
Schale der NWs oder auf die Band-Band-Linie zurückzuführen<br />
sind. Besonders interessant ist, dass mit ansteigender<br />
Temperatur die defekt-bedingten D-Linien<br />
stärker werden. Für Raumtemperatur dominiert die D1-<br />
Linie bei 1550 nm das Spektrum mit effizienter Emission<br />
(Abb. 36).<br />
Erst kürzlich wurde beschrieben, dass die Lichtextraktion,<br />
für LEDs aus Verbindungshalbleiter-Material, stark<br />
anwächst, wenn Nanostab / Nanodraht-Anordnungen<br />
an Stelle von kompakten LEDs verwendet werden. Dieser<br />
Ansatz sollte auch für LEDs, die aus Si-NWs bestehen,<br />
gültig sein.<br />
Abb. 35: Aus der Verschiebung des Maximums der Fotolumineszenz<br />
bei Verringerung der Dicke der Siliziumschicht kann auf<br />
die Vergrößerung des Bandabstandes geschlossen werden.<br />
Der Einsatz zeigt ein Fotolumineszenz-Spektrum von 2 nm<br />
dicken Si-Schichten im MQW-Stapel.<br />
Fig. 35: the increase of the bandgap with decreasing thickness of<br />
the Si layers can be deduced from the peak position<br />
measured by pl. the insert shows a pl spectrum for 2 nm<br />
thick Si layers in the MQW stack.<br />
(b) Si nWs with a diameter of about 20 nm fabricated<br />
by thermal evaporation of Sio were provided by Zhejiang<br />
university Hangzhou, China. they were studied<br />
by luminescence (Cl and pl).<br />
the spectra showed a number of lines which are related<br />
to extended crystal defects inside the nWs, to the<br />
interface between the Si core and Si oxide shell surrounding<br />
the Si nWs or to the Si band-band line. Most<br />
interestingly, with increasing temperature the defect<br />
related D lines become stronger. At room temperature<br />
the D1-line at 1550 nm dominates the spectrum with<br />
efficient emission (Fig. 36).<br />
Recently, it was demonstrated that the light extraction<br />
from an leD was strongly enhanced by using<br />
nanorod / nanowire arrays instead of the entire area<br />
of the leD fabricated from direct compound material.<br />
this approach might also be applied for leDs making<br />
use of Si nWs.<br />
Abb. 36: Die Fotolumineszenz-Spektren von Si-Nanodrähten bei<br />
Raumtemperatur zeigen ein neues intensives Band 4<br />
um 1550 nm. Das obere Spektrum wurde bei planarem<br />
Einfall des Elektronenstrahles beobachtet. Das untere<br />
Spektrum wurde am Querschnitt nach Aufspaltung der<br />
Probe gemessen.<br />
Fig. 36: Cl spectra of Si nanowires measured at room temperature<br />
exhibit a new intensive band 4 around 1550 nm. the<br />
upper spectrum was observed with planar incidence of<br />
the electron beam and the lower spectrum was measured<br />
on the cross-section after cleaving the sample.<br />
A n n u A l R e p o R t 2 0 0 6<br />
6
1,5 µm Emission aus einer<br />
Si MOS-LED<br />
6 A n n u A l R e p o R t 2 0 0 6<br />
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Unser Ziel war es, eine Si-basierte MOS-LED für die<br />
Lichtemission bei 1,5 µm zu demonstrieren, die mit der<br />
Si-Technologie herstellbar ist.<br />
Die optische Übertragung von Daten auf dem Chip wird<br />
in Zukunft benötigt. Für viele Schlüsselkomponenten<br />
konnte bereits gezeigt werden, dass sie mit der Si-Technologie<br />
realisierbar sind. Ein CMOS-kompatibler elektrisch<br />
gepumpter Lichtemitter ist jedoch noch nicht<br />
verfügbar. Dieser Lichtemitter muss bei Raumtemperatur<br />
(RT) eine ausreichend hohe Effizienz aufweisen und<br />
räumlich begrenzt Licht bei 1,5 µm ausstrahlen.<br />
Kürzlich haben wir gezeigt, dass Si-Waferbonden die reproduzierbare<br />
Herstellung von Versetzungsnetzwerken<br />
mit einer geeigneten Struktur erlaubt, die eine dominante<br />
Lumineszenz der D1-Versetzungslinie bei der geforderten<br />
Wellenlänge von 1,5 µm hervorbringt.<br />
Das Auftreten der Band-Band-Linie bei 1,1 µm bei der<br />
Elektrolumineszenz (EL) von MOS-Tunneldioden ist<br />
bereits bekannt. Ein derartiges EL-Spektrum von einer<br />
MOS-Tunneldiode, das bei RT aufgenommen wurde und<br />
bei dem die BB-Linie dominiert, ist in Abb. 37 gezeigt.<br />
Die entsprechenden physikalischen Grundprozesse für<br />
MOS-LEDs auf n- bzw. p-Si sind in Abb. 38 schematisch<br />
dargestellt. Wenn nun ein Versetzungsnetzwerk mit geeigneter<br />
Struktur in der Nähe der Grenzfläche Si / Oxid<br />
platziert wird - und zwar dicht an der Akkumulationsrandschicht<br />
bzw. innerhalb von ihr – dann dominiert<br />
die D1-Line bei 1,5 µm und nicht mehr die BB-Linie.<br />
Dies zeigt das EL-Spektrum in Abb. 39 deutlich. Der<br />
Tunnelstrom wächst mit zunehmender Vorspannung an<br />
der Gate-Elektrode und führt zu einem Anwachsen der<br />
Lumineszenzintensität. Für die hier gezeigte MOS-LED<br />
auf p-Si befindet sich das Versetzungsnetzwerk in etwa<br />
45 nm Tiefe unterhalb der Si / Oxid-Grenzfläche. Auf<br />
dem etwa 1,8 nm dicken Si-Oxid wurde eine 134 nm dicke<br />
Ti-Gate-Elektrode abgeschieden (mit 7,9 x 10 -3 cm 2<br />
Fläche).<br />
1.5 µm emission from a<br />
si Mos-led<br />
our objective is to demonstrate a Si-based MoS-leD<br />
which emits at 1.5 µm and can be made with Si technology.<br />
on-chip optical interconnects will be essential for future<br />
integrated circuits. Many key components that<br />
can be integrated on the chip have already been realized<br />
using Si technology. A CMoS-compatible electrically<br />
pumped Si-based light emitter is still not available.<br />
the desired light emitter should not only exhibit<br />
a high luminescence efficiency at room temperature<br />
(Rt), but must also be spatially confined and emit at<br />
about 1.5 µm.<br />
Recently, we have demonstrated that Si wafer bonding<br />
allows the reproducible formation of dislocation<br />
networks that exhibit a dominating light emission at<br />
the desired wavelength of about 1.5 µm which is originated<br />
by the dislocation-related D1-line.<br />
electroluminescence (el) with emission of the bandto-band<br />
(BB) line at about 1.1 µm has been observed<br />
from a MoS tunnel diode. A corresponding el spectrum<br />
of a MoS tunnel diode exhibiting BB luminescence<br />
at Rt is shown in Fig. 37. the basic processes<br />
in MoS-leDs on n-type and p-type Si, respectively, are<br />
schematically represented in Fig. 38. When a dislocation<br />
network with appropriate structure is positioned<br />
near the Si / oxide interface, close to / within the accumulation<br />
layer, the radiative recombination is dominated<br />
by the D1 line at about 1.5 µm instead of the<br />
BB line. this is clearly seen from the el spectra shown<br />
in Fig. 39. the tunnelling current increases with increasing<br />
gate voltage, leading to an enhancement of<br />
the el intensity. the MoS-leD on p-type Si, with the<br />
dislocation network at a depth of about 45 nm, consisted<br />
of a 134 nm thick ti gate (7.9 x 10 -3 cm 2 ) deposited<br />
on 1.8 nm thick Si oxide.
a u s G e w ä h l t e p r o J e K t e – s e l e c t e d p r o J e c t s<br />
Die von uns demonstrierte neuartige Si-LED für Infrarot-Emission<br />
kommt beispielsweise ohne eine zusätzliche<br />
Er-Dotierung aus und ist voll mit der Si-Technologie<br />
kompatibel. Unsere Abschätzungen zeigen, dass<br />
wir eine RT-Effizienz von etwa 1 % erwarten können,<br />
wenn die von uns vorgeschlagenen Verbesserungen umgesetzt<br />
werden.<br />
Abb. 37: Die Elektrolumineszenz einer MOS Tunneldiode auf p-Si<br />
zeigt bei Raumtemperatur Band-Band Lumineszenz mit<br />
einer Effizienz >0,1 %. Der Einschub zeigt die Abhängigkeit<br />
der Elektrolumineszenz vom Strom.<br />
Fig. 37: el of a MoS tunnel diode on p-Si exhibiting BB luminescence<br />
at Rt with an efficiency > 0.1 %. the insert<br />
shows the dependence of the el signal on the current<br />
level.<br />
the novel Si leD for IR emission does not require<br />
additional er doping and is fully compatible with Si<br />
technology. According to our estimates and proposed<br />
improvements it offers the capability for an efficiency<br />
around 1 % at Rt.<br />
Abb. 38: Modell einer MOS-LED, (a) p-Material mit einem Versetzungsnetzwerk,<br />
das sowohl Versetzungs-Lumineszenz<br />
als auch Band-Band-Lumineszenz zeigen kann (b) n-Si<br />
ohne Versetzungsnetzwerk zeigt nur Band-Band-<br />
Lumineszenz.<br />
Fig. 38: Scheme of MoS-leD, (a) p-type material with dislocation<br />
network, capable of yielding both dislocation and BB<br />
luminescence, (b) n-type Si without network yielding BB<br />
luminescence only.<br />
Abb. 39: Elektrolumineszenz einer MOS-LED bei 80 K unter<br />
negativer Gatespannung mit durch ein Versetzungsnetzwerk<br />
nahe der Si / Oxid-Grenzfläche hervorgerufener<br />
Strahlung bei 1,5 µm. Die Intensität wächst unterpropor-<br />
tional mit zunehmendem Tunnelstrom, wie in den Spektren<br />
bei 2, 5 und 8 mA erkennbar ist. Der Einsatz zeigt die<br />
Strom-Spannungs-Abhängigkeit der LED bei 300 K.<br />
Fig. 39: electroluminescence at 80 K of a MoS-leD under<br />
negative gate bias with 1.5 µm radiation caused by the<br />
dislocation network near the Si / oxide interface. the<br />
intensity is found to increase sub-linearly with<br />
increasing tunneling current as seen from the spectra<br />
measured at 2, 5 and 8 mA, respectively. the insert<br />
represents the I-V characteristic of the leD at 300 K.<br />
A n n u A l R e p o R t 2 0 0 6<br />
6
66 A n n u A l R e p o R t 2 0 0 6<br />
G e M e i n s a M e l a b o r e – J o i n t l a b s<br />
Joint Labs
Gemeinsames Labor <strong>IHP</strong>/BTU<br />
Das Gemeinsame Labor <strong>IHP</strong> / BTU auf dem Campus<br />
der Brandenburgischen Technischen Universität (BTU)<br />
Cottbus besteht seit 2000. Es bündelt die Forschungspotentiale<br />
beider Partner und leistet – unter maßgeblicher<br />
Einbeziehung von Studenten – interdisziplinäre<br />
Forschung auf dem Gebiet der Halbleitermaterialien.<br />
Dabei bezieht es Lehrstühle der BTU in seine Forschungstätigkeit<br />
ein, wie Experimentalphysik II / Materialwissenschaften,<br />
Theoretische Physik, Physikalische<br />
Chemie oder Schaltkreisentwurf. Darüber hinaus ist<br />
auch die Fachhochschule Lausitz mit dem Gemeinsamen<br />
Labor assoziiert und beteiligt sich durch technisch-präparative<br />
Arbeiten.<br />
National arbeitet das Gemeinsame Labor im Rahmen<br />
seiner Projektarbeit mit einer ganzen Reihe von Forschungseinrichtungen<br />
wie dem MPI Halle, den Universitäten<br />
Göttingen, Jena, Stuttgart, RWTH Aachen, HMI<br />
Berlin oder dem IPHT Jena und dem Unternehmen Siltronic<br />
AG, Burghausen, vertraglich zusammen.<br />
Eine wichtige Aufgabe stellt auch der Ausbau der internationalen<br />
Vernetzung des Gemeinsamen Labors dar.<br />
Die BTU und das <strong>IHP</strong> sind über das Gemeinsame Labor<br />
Mitglied im internationalen Konsortium SiWEDS (Silicon<br />
Wafer Engineering & Defect Science Center, siehe<br />
www.mse.ncsu.edu / siweds / ), dem renommierte Halbleiterfirmen,<br />
wie z.B. Texas Instr., Toshiba, Samsung,<br />
Siltronic AG, Centrotherm GmbH, und namhafte Universitäten,<br />
wie z.B. MIT, Stanford, UC Berkeley, angehören.<br />
International wurden neben den bestehenden Verbindungen<br />
in <strong>2006</strong> Zusammenarbeiten mit dem Institut<br />
MESA+ an der Universität Twente (Niederlande) und<br />
mit dem Unternehmen SOITEC S.A. (Frankreich) begonnen.<br />
Ebenso arbeitet das Gemeinsame Labor aktiv im<br />
Europäischen Projekt CADRES (Coordinated Action on<br />
Defects Related to Engineering Advanced Silicon Based<br />
Devices) mit an dem eine große Zahl europäischer Universitäten,<br />
Forschungseinrichtungen und Unternehmen<br />
beteiligt sind.<br />
G e M e i n s a M e l a b o r e – J o i n t l a b s<br />
Joint lab ihp / btu<br />
the Joint lab IHp / Btu located at the campus of the<br />
Brandenburg technical university Cottbus (Btu) was<br />
founded in 2000. It pools the research potential of<br />
the partners IHp and Btu and conducts interdisciplinary<br />
research – with substantial participation of<br />
students – in the field of semiconductor materials.<br />
the Btu chairs experimental physics II / Materials<br />
Science, theoretical physics, physical Chemistry and<br />
Circuit Design are closely involved in its research activities.<br />
the nearby university of Applied Sciences<br />
lausitz is also associated with the Joint lab and contributes<br />
engineering and preparation work.<br />
Within the framework of its research projects, the<br />
Joint lab collaborates on contract basis nation-wide<br />
with various research facilities such as e.g. MpI Halle,<br />
universities in Göttingen, Jena, and Stuttgart, RWtH<br />
Aachen, HMI Berlin or IpHt Jena, and with the wafer<br />
manufacturer Siltronic AG, Burghausen.<br />
the expansion of its international networking is a further<br />
important task of the Joint lab. Btu Cottbus and<br />
the IHp - via IHp / Btu Joint lab - are a member of the<br />
international consortium SiWeDS (Silicon Wafer engineering<br />
& Defect Science Center, see www.mse.ncsu.<br />
edu / siweds / ), associating noted semiconductor<br />
companies, e.g. texas Instruments, toshiba, Samsung,<br />
Siltronic AG, Centrotherm GmbH and well-known universities<br />
such as MIt, Stanford and uC Berkeley. In<br />
addition to the already existing international scientific<br />
contacts, new collaborations with the institute<br />
MeSA+ at university twente (netherlands) and with<br />
the company SoIteC S.A. (France) were started in<br />
<strong>2006</strong>. Moreover, the Joint lab actively participates<br />
in the european project CADReS (Coordinated Action<br />
on Defects Related to engineering Advanced Silicon<br />
Based Devices), which involves numerous european<br />
universities, research facilities and companies.<br />
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Im Jahr <strong>2006</strong> bearbeitete das Gemeinsame Labor vier<br />
Drittmittelprojekte, darunter zwei BMBF-Projekte, ein<br />
Projekt der Volkswagenstiftung und ein Industrieprojekt.<br />
Der Bund und das Land Brandenburg förderten<br />
bis Ende <strong>2006</strong> im Rahmen des Hochschul- und Wissenschaftprogramms<br />
HWP im Gemeinsamen Labor den<br />
Aufbau eines Kompetenzzentrums für Halbleitermaterialien<br />
und -technologien. In diesem Zusammenhang<br />
wurde die Kernkompetenz des Gemeinsamen Labors<br />
„Maßschneidern der Eigenschaften des Silizium-Materials“<br />
durch grundlagenorientierte Vorlaufforschung<br />
weiter ausgebaut. Im Bewusstsein, dass die entwickelte<br />
Si-Technologie heute über breite Möglichkeiten verfügt<br />
und nach neuen Anwendungen sucht, beteiligt sich das<br />
Gemeinsame Labor an Arbeiten, dem Silizium Eigenschaften<br />
„anzutrainieren“, die seinen künftigen Einsatz<br />
auf neuen Einsatzfeldern gestatten soll.<br />
Basierend auf den Ergebnissen dieser Vorlaufforschung<br />
– zu der z.B. Si-basierte Lichtemitter, Si-basierte Nanostrukturen<br />
wie c-Si / SiO 2 -Schichtstapel und Si-Nanodrähte<br />
oder die kontrollierte Platzierung von Biomolekülen<br />
auf Si für Biochips zählen – werden für das<br />
<strong>IHP</strong> Entscheidungen für seine zukünftige inhaltliche<br />
Ausrichtung vorbereitet.<br />
Die langfristigen Forschungsschwerpunkte des Gemeinsamen<br />
Labors zum Komplex „Silizium“ sollen Beiträge<br />
zur Weiterentwicklung der Mikroelektronik, zur Einführung<br />
einer Si-basierten Nanoelekronik, zur Einführung<br />
einer Si-basierten Photonik, zur Verknüpfung von Si mit<br />
der Biologie und zur Unterstützung der Si-basierten<br />
Photovoltaik liefern. Auf dem letztgenannten Gebiet<br />
ist das Gemeinsame Labor in der BTU-Forschungeinrichtung<br />
CeBra (Centrum für Energietechnologie Brandenburg,<br />
siehe www.tu-cottbus.de / cebra / ) verankert.<br />
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G e M e i n s a M e l a b o r e – J o i n t l a b s<br />
In <strong>2006</strong> the Joint lab worked on four projects funded<br />
by third parties, among them two projects funded<br />
by the BMBF (Federal Ministry of education and<br />
Research), one project funded by Volkswagenstiftung<br />
and one industry project. Within the framework of<br />
their university and science program, the Federal Republic<br />
of Germany and the State of Brandenburg provided<br />
support for the development of a centre of expertise<br />
for semiconductor materials and technology<br />
in the Joint lab until the end of <strong>2006</strong>. this grant allowed<br />
conducting fundamental cutting-edge research<br />
and strengthening the Joint lab’s core competency<br />
“tailoring of Si material properties”.<br />
Aware of the high capabilities of advanced Si technology<br />
and the constant search for new applications,<br />
the Joint lab participates in research aimed at “teaching”<br />
the silicon material new properties that are<br />
to enable the use of Si in new application areas. the<br />
results of this cutting-edge research, comprising Sibased<br />
light emitters, Si-based nanostructures such<br />
as c-Si / Sio 2 stacks or Si nanowires, and controlled<br />
binding of biomolecules to Si for future biochips,<br />
will serve as a basis for decisions regarding future research<br />
directions at IHp.<br />
the long-term research topics of the Joint lab in the<br />
field of silicon aim to contribute to future developments<br />
in microelectronics, implementation of Sibased<br />
nanoelectronics, implementation of Si-based<br />
photonics, interfacing Si electronics with biology, and<br />
support for Si-based photovoltaics. With the latter research<br />
field, the Joint lab is connected to the Btu<br />
research facility CeBra (Center for energy technology<br />
Brandenburg, see www.tu-cottbus.de / cebra / ).
Die Arbeiten zum Komplex „Silizium“ sind inhaltlich<br />
wie folgt strukturiert und werden im Rahmen von Projekten,<br />
meist in Arbeitsteilung mit externen Partnern,<br />
verfolgt:<br />
Mikroelektronik<br />
- Si für zukünftige Halbleitertechnologien<br />
(Forschungsvertrag mit Siltronic AG)<br />
- Si-basierte Lichtemitter (BMBF-Projekt<br />
„SILEM“ mit MPI Halle und Universität Stuttgart)<br />
- Diagnostik für die Si-Material- und Technologieentwicklung<br />
(Vereinbarung mit SOITEC S.A.,<br />
Frankreich)<br />
Nanoelektronik<br />
- Si / SiO 2 – Schichtstapel mit Dicken im nm-Bereich<br />
(Kooperation mit der RWTH Aachen)<br />
- Si-Nanodrähte (Kooperation mit Zhejiang Univ.,<br />
Hangzhou, VR China)<br />
Verknüpfung Si mit Biomolekülen<br />
- Kontrollierte Platzierung von Biomolekülen auf Si<br />
(Volkswagen-Projekt „SOBSI“ mit MPI Halle,<br />
IPHT Jena, Universität Göttingen)<br />
Photovoltaik<br />
- Bandstrukturdesign für zukünftige Höchsteffizienz-<br />
Solarzellen (BMBF-Projekt „Bandstrukturdesign…“<br />
mit RWTH Aachen, HMI Berlin, Universitäten<br />
Stuttgart und Jena)<br />
- Einfluß von Verunreinigungen auf die elektrische<br />
Wirkung von Kristalldefekten in Si (Vorbereitung<br />
des BMU-Verbundrojektes „SolarFocus“ an dem<br />
sich deutsche Unternehmen der Photovoltaikbranche<br />
und Forschungseinrichtungen wie FhG<br />
ISE Freiburg oder ISF Hameln sowie Hochschulen<br />
wie u.a. Universitäten Konstanz, Freiberg …<br />
beteiligen)<br />
Transport in Si-basierten Quantenstrukturen<br />
- Theorie für schnelle Si-Nanodraht-FETs<br />
Pulsed Laser Deposition<br />
- Erzeugung von Nanostrukturen<br />
Im Jahr <strong>2006</strong> wurden von den <strong>IHP</strong>-Mitarbeitern im Gemeinsamen<br />
Labor mehr als 24 Publikationen veröffentlicht,<br />
46 Vorträge, darunter 7 eingeladene, gehalten und<br />
4 Patente angemeldet. Ein Vortrag auf der Internationalen<br />
Konferenz EDS-<strong>2006</strong> wurde mit dem „Helmut Alexander<br />
Award“ ausgezeichnet.<br />
G e M e i n s a M e l a b o r e – J o i n t l a b s<br />
the research activities within the complex “Silicon”<br />
are organized in the form of projects as given below<br />
and are mostly carried out in collaboration with external<br />
partners:<br />
<strong>Microelectronics</strong><br />
- Si for future semiconductor technologies<br />
(research contract with Siltronic AG)<br />
- Si-based light emitter (project “SIleM”, funded<br />
by BMBF, collaboration with MpI Halle and<br />
university Stuttgart)<br />
- Diagnostics for Si materials and technology<br />
development (non-disclosure agreement with<br />
SoIteC S.A., France)<br />
nanoelectronics<br />
- Si / Sio 2 stacks of nm thickness<br />
(cooperation RWtH Aachen)<br />
- Si nanowires (cooperation with Zhejiang<br />
university, Hangzhou, p.R. China)<br />
interfacing si with biomolecules<br />
- Controlled binding of biomolecules on Si<br />
(project “SoBSI”, funded by Volkswagenstiftung,<br />
collaboration with MpI Halle, IpHt Jena and<br />
university Göttingen)<br />
photovoltaics<br />
- Band structure design for future high-efficiency<br />
solar cells (project funded by BMBF, collaboration<br />
with RWtH Aachen, HMI Berlin, university<br />
Stuttgart, university Jena)<br />
- Impact of impurities on the electrical effect of<br />
crystal defects in Si (preparation of joint project<br />
“SolarFocus”, to be funded by BMu, participation<br />
of German pV companies, research institutes<br />
and universities )<br />
transport in si-based Quantum structures<br />
- theory of fast Si nanowire Fets<br />
pulsed laser deposition<br />
- Manufacturing of nanostructures<br />
In <strong>2006</strong>, more than 24 publications, 46 presentations<br />
(among them 7 invited) and 4 patents originated<br />
from research of IHp scientists in the Joint lab. A<br />
contribution at the international conference eDS-<br />
<strong>2006</strong> received the “Helmut Alexander Award”.<br />
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Für die laufenden Projekte standen für das Jahr <strong>2006</strong><br />
mehr als 600 T Euro eingeworbene Drittmittel zur Verfügung.<br />
Hervorzuheben ist auch die Beteiligung des Gemeinsamen<br />
Labors an der Ausrichtung von Internationalen<br />
Konferenzen wie der International Conference „Extended<br />
Defects in Semiconductors“ (EDS <strong>2006</strong>) vom<br />
17.- 22. September <strong>2006</strong> in Halle und dem Symposium<br />
„Advanced Silicon for the 21 st Century“ auf dem<br />
EMRS / IUMRS Spring Meeting vom 29.05.-02.06.<strong>2006</strong><br />
in Nizza.<br />
Das Gemeinsame Labor unterstützt das Lehrangebot<br />
der BTU mit Vorlesungen, Übungen und Praktika.<br />
Weiterführende Informationen über das Gemeinsame<br />
Labor sind unter www.jointlab.de abrufbar.<br />
Gemeinsames Labor <strong>IHP</strong>/TFH Wildau<br />
Das gemeinsame Forschungs- und Ausbildungszentrum<br />
(Joint Lab) des <strong>IHP</strong> und der Technischen Fachhochschule<br />
Wildau (TFHW) wurde am 20.02.<strong>2006</strong> in Anwesenheit<br />
der Ministerin für Wissenschaft Forschung und<br />
Kultur des Landes Brandenburg, Frau Prof. Dr. Johanna<br />
Wanka, des Präsidenten der TFH Wildau, Prof. Dr.<br />
László Ungvári, und des Wissenschaftlich-Technischen<br />
Geschäftsführers des <strong>IHP</strong>, Prof. Dr. Wolfgang Mehr,<br />
feierlich eröffnet. Auf der Basis des Forschungs- und<br />
Entwicklungsvertrages <strong>IHP</strong>-TFH Wildau vom 30. April<br />
2005 sind konkrete Schritte zur Koordinierung der Aktivitäten<br />
in Forschung und Lehre an beiden Institutionen<br />
festgelegt worden, die unter dem Dach eines gemeinsamen<br />
Labors, dem „Joint Lab <strong>IHP</strong> / TFHW“ stattfinden<br />
sollen.<br />
Der Forschungsschwerpunkt des Joint Lab ist die Entwicklung<br />
neuartiger siliziumbasierter Devicekonzepte.<br />
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third party funding of more than 600,000 euR was obtained<br />
for the current projects in <strong>2006</strong>.<br />
Worth emphasizing is the participation of the Joint<br />
lab in the organisation of international conferences<br />
such as the International Conference “extended Defects<br />
in Semiconductors” (eDS <strong>2006</strong>) in Halle and the<br />
Symposium “Advanced Silicon for the 21 st Century” at<br />
the eMRS Spring Meeting <strong>2006</strong> in nice (France).<br />
the Joint lab supports teaching at Btu Cottbus by<br />
lectures, exercises and practical courses.<br />
For further information about the Joint lab IHp / Btu<br />
please visit the website www.jointlab.de.<br />
Joint lab ihp / tFh wildau<br />
the common research and education centre (Joint<br />
lab) of the IHp and the university of Applied Sciences<br />
Wildau (tFHW) was inaugurated on February 20,<br />
<strong>2006</strong> in presence of the minister for science, research<br />
and culture of Brandenburg, prof. Johanna Wanka,<br />
the president of the tFH Wildau, prof. lászló ungvári,<br />
and the scientific director of the IHp, prof. Wolfgang<br />
Mehr. on the basis of the research and development<br />
contract between IHp and tFH Wildau dated April 30,<br />
2005, concrete steps were defined for the coordination<br />
of activities in research and teaching in both institutions<br />
which are to take place under the auspices of<br />
a common lab, the “Joint lab IHp / tFHW”.<br />
the main research focus is on the development of<br />
new silicon-based device concepts.
Im Rahmen des Projektes: „Deposition und Strukturierung<br />
von Funktionsschichten für neuartige Bauelemente<br />
der Informationstechnologie und Sensorik“ wurde ein<br />
siliziumbasierter Testchip entwickelt, der eine detaillierte<br />
Charakterisierung elektronischer Transporteigenschaften<br />
erlaubt. Erste Versuchsmuster dieser Testchips<br />
befinden sich gegenwärtig in der Evaluierungsphase.<br />
Diese Entwicklung wurde im Rahmen des Europäischen<br />
Forschungsnetzwerkes EUROFET (http:www.tfh-wildau.<br />
de / iplpt / eurofet / ) durchgeführt, welches die TFHW<br />
koordiniert. Durch die Entwicklung des Testchips steht<br />
eine schnelle Methode zur Erfassung relevanter elektronischer<br />
Materialparameter zur Verfügung.<br />
Für das Projekt „Minimal-invasiver Glucose Sensor<br />
(MIBS)“ wurden durch Joint-Lab-Mitarbeiter der TFHW<br />
Beiträge bei der Auswahl unterschiedlicher Materialien<br />
geleistet.<br />
Ein weiteres, zentrales Arbeitsgebiet des Joint Lab ist<br />
die gemeinsame Lehre. Dazu gehört die Einbindung<br />
fachlicher Aspekte der Chipherstellung (<strong>IHP</strong>) in das<br />
Studium der „Physikalischen Technik“ an der TFH Wildau.<br />
Ziel ist es, die vorhandenen Module des Hauptstudiums<br />
mit anwendungsorientierten Lehrinhalten aus<br />
dem Bereich der Mikroelektronik zu untersetzen. Damit<br />
wird eine weitere Praxiskomponente, die sich in die<br />
Hauptlinie der Ausbildung an der TFH einordnet, für die<br />
Studierenden angeboten. Zwei Praktika am <strong>IHP</strong> sind<br />
als Pflicht- und Wahlpflichtfach in das Hauptstudium<br />
der „Physikalischen Technik“ integriert. Im Jahre <strong>2006</strong><br />
wurden 12 Praktikums- und Diplomarbeiten durch Studenten<br />
der TFH Wildau am <strong>IHP</strong> angefertigt und durch<br />
Mitarbeiter des <strong>IHP</strong> betreut.<br />
G e M e i n s a M e l a b o r e – J o i n t l a b s<br />
Within the scope of the project: “Deposition and<br />
structuring of functional layers for new device elements<br />
in information and sensor technology“, a silicon-based<br />
test chip which permits a detailed characterization<br />
of electronic transport properties was<br />
developed. presently the first experimental models<br />
of these test chips are in the evaluation phase. this<br />
development was carried out within the scope of the<br />
european research network euRoFet (http:www.tfhwildau.de<br />
/ iplpt / eurofet / ) which is coordinated by<br />
the tFHW. By the development of the test chip a quick<br />
method for aquisition of relevant electronic material<br />
parameters is available.<br />
Members of the Joint lab contributed to the selection<br />
of materials in the project “Minimum-invasive<br />
glucose sensor (MIBS)“.<br />
Another central field of activity in the Joint lab is<br />
common teaching. this includes the integration of<br />
technical aspects of chip processing (IHp) into the<br />
study of “physical technology“ at the tFH Wildau.<br />
the objective is to complement the existing modules<br />
of the main study with application-oriented teaching<br />
contents from the field of microelectronics. In this<br />
way another practice-orientated component is integrated<br />
into the outline of the education at the tFHW<br />
and made available to the students. two training<br />
courses at the IHp are integrated as compulsory and<br />
electoral compulsory subjects into the main study of<br />
“physical technology”. In <strong>2006</strong>, 12 training course<br />
papers and diploma theses were contributed by students<br />
of the tFH Wildau at the IHp which were supervised<br />
by employees of the IHp.<br />
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K o n F e r e n Z e n u n d w o r K s h o p s – c o n F e r e n c e s a n d w o r K s h o p s<br />
Conferences and Workshops
K o n F e r e n Z e n u n d w o r K s h o p s – c o n F e r e n c e s a n d w o r K s h o p s<br />
Workshop des National NanoFab Center (NNFC),<br />
Korea mit dem <strong>IHP</strong> zum Thema „Cooperation in<br />
the Field of Nanotechnology”,<br />
12. – 16. Februar <strong>2006</strong>, Frankfurt (Oder).<br />
Auf diesem durch das BMBF geförderten Workshop informierten<br />
sich die Partner gegenseitig über ihre aktuellen<br />
Forschungsvorhaben und aussichtsreiche Themen<br />
für eine Kooperation. Bei einem Gegenbesuch in Korea<br />
wurde dazu ein Memorandum of Understanding unterzeichnet.<br />
symposium „silicon Materials science and technology<br />
X” innerhalb der 209. ecs-tagung,<br />
8. – 11. Mai <strong>2006</strong>, denver, usa.<br />
Im Mittelpunkt dieser bereits zum zehnten Mal stattfindenden<br />
viertägigen Veranstaltung standen Materialfragen<br />
und technologische Aspekte von Silizium.<br />
Ein Mitarbeiter des <strong>IHP</strong> war maßgeblich an der Vorbereitung<br />
und Durchführung des Symposiums beteiligt.<br />
Workshop „From Research to Innovation”<br />
17. – 19. Mai <strong>2006</strong>, Szczecin, Polen.<br />
Im Rahmen des Workshops wurden Fragen der innovativen<br />
Verwertung von Forschungsergebnissen diskutiert.<br />
Die gemeinsam von Mitarbeitern des <strong>IHP</strong> und der TU<br />
Szczecin organisierte und durchgeführte Veranstaltung<br />
fand im Rahmen des Deutsch-Polnischen Jahres statt.<br />
E-MRS <strong>2006</strong> Spring Meeting,<br />
29. Mai – 2. Juni <strong>2006</strong>, Nizza, Frankreich.<br />
Es wurden drei Symposien maßgeblich durch <strong>IHP</strong>-Mitarbeiter<br />
organisiert:<br />
Symposium A: „Current Trends in Nanoscience -<br />
from Materials to Applications”<br />
Symposium L: „Characterisation of High-k<br />
Dielectric Materials”<br />
Symposium V: „Advanced Silicon for the 21st Century”<br />
workshop of the national nanoFab center (nnFc),<br />
Korea with the ihp on “cooperation in the Field<br />
of nanotechnology”,<br />
February 12 -16, <strong>2006</strong>, Frankfurt (oder).<br />
At this Workshop supported by the BMBF the partners<br />
informed one another about their current research<br />
projects and promising topics for a cooperation. During<br />
a return visit in Korea a Memorandum of understanding<br />
was signed.<br />
symposium “silicon Materials science and technology<br />
X” within the 209th ecs Meeting,<br />
May 8 – 11, <strong>2006</strong>, denver, usa.<br />
In the focus of this four-day meeting, taking place for<br />
the tenth time, were material issues and technological<br />
aspects of silicon.<br />
A member of the IHp was significantly involved in the<br />
preparation and implementation of the symposium.<br />
workshop “From research to innovation”<br />
May 17 – 19, <strong>2006</strong>, szczecin, poland.<br />
During the workshop questions related to the utilization<br />
of research results for innovations were discussed.<br />
the meeting, jointly organized and implemented by<br />
members of the IHp and the technical university of<br />
Szczecin, took place in the context of the Germanpolish<br />
year.<br />
e-Mrs <strong>2006</strong> spring Meeting,<br />
May 29 – 2 June 2, <strong>2006</strong>, nice, France.<br />
three symposia were significantly organized by IHp<br />
staff:<br />
Symposium A: “Current trends in nanoscience -<br />
from Materials to Applications”<br />
Symposium l “Characterisation of High-k<br />
Dielectric Materials”<br />
Symposium V: “Advanced Silicon for the<br />
21st Century”<br />
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K o n F e r e n Z e n u n d w o r K s h o p s – c o n F e r e n c e s a n d w o r K s h o p s<br />
<strong>IHP</strong>-Symposium „Halbleiter und Nanostrukturen“,<br />
14. Juni <strong>2006</strong>, Frankfurt (Oder).<br />
Auf diesem Symposium berichteten namhafte Wissenschaftler<br />
deutscher Forschungseinrichtungen über ihre<br />
aktuellen Arbeiten.<br />
Die vom <strong>IHP</strong> organisierte Veranstaltung diente auch der<br />
Würdigung verdienstvoller Mitarbeiter des Institutes,<br />
die altersbedingt ausscheiden.<br />
14 th Workshop on Dielectrics in <strong>Microelectronics</strong><br />
(WoDiM), 26. – 28. Juni <strong>2006</strong>, Catania, Italien.<br />
Hauptziel des Symposiums war es, Spezialisten auf dem<br />
Gebiet der Dielektrika und deren Anwendungen in der<br />
Mikroelektronik zusammenzubringen.<br />
Ein Mitarbeiter des <strong>IHP</strong> war im internationalen Organisationskomitee<br />
der WoDiM tätig. Im Jahr 2008 wird<br />
diese Tagung durch das <strong>IHP</strong> organisiert und in Bad<br />
Saarow in der Nähe von Frankfurt (Oder) stattfinden.<br />
Fünfter Internationaler Sommerstudiengang Mikroelektronik,<br />
28. August – 2. September <strong>2006</strong>, Frankfurt (Oder).<br />
Zu dieser Veranstaltung zum Thema Technologien und<br />
Materialien für die drahtlose Kommunikation waren<br />
Studenten aus Ost- und Mitteleuropa eingeladen.<br />
Vorbereitet und durchgeführt wurde sie durch das <strong>IHP</strong><br />
gemeinsam mit dem Investorcenter Ostbrandenburg<br />
und der Europauniversität Viadrina.<br />
European Microwave Week, Workshop WS2 „SiGeC<br />
HBT: Device Technology and Applications”,<br />
10. September <strong>2006</strong>, Manchester, Großbritannien.<br />
Auf diesem Workshop wurden die SiGe BiCMOS-Technologien<br />
des <strong>IHP</strong> und deren Anwendung für Radar,<br />
60-GHz-Transceiver, schnelle A/D-Wandler und UWB-<br />
Schaltkreise vorgestellt.<br />
Der Workshop wurde von der Universität Paderborn organisiert<br />
und vom <strong>IHP</strong> durchgeführt.<br />
ihp-symposium “semiconductors and nanostructures“,<br />
June 14, <strong>2006</strong>, Frankfurt (oder).<br />
At this symposium well-known scientists from German<br />
research institutions reported on their current work.<br />
the meeting organized by the IHp also served as a<br />
framework for the appraisal of merited members of<br />
the institute, about to retire from office due to age.<br />
14 th workshop on dielectrics in <strong>Microelectronics</strong><br />
(wodiM), June 26 – 28, <strong>2006</strong>, catania, italy.<br />
the main objective of the symposium was to bring together<br />
specialists working in the field of dielectrics<br />
and all aspects of their applications in microelectronics.<br />
A scientist of the IHp was a member of the international<br />
WoDiM organisation committee. the next symposium<br />
in 2008 will be organized by the IHp and take<br />
place in Bad Saarow near Frankfurt (oder).<br />
Fifth international summer school on<br />
<strong>Microelectronics</strong>,<br />
august 28 – september 2, <strong>2006</strong>, Frankfurt (oder).<br />
the topic of the summer school was technologies and<br />
materials for wireless communication. Students from<br />
east and Central europe were invited to participate.<br />
the meeting was organized and implemented by the<br />
IHp together with the Investor Center ostbrandenburg<br />
and the european university Viadrina.<br />
european Microwave week, workshop ws2 “siGec<br />
hbt: device technology and applications”,<br />
september 10, <strong>2006</strong>, Manchester, uK.<br />
IHp’s SiGe BiCMoS technologies and their application<br />
for radar, 60 GHz transceivers, fast A/D converters and<br />
uWB circuits were presented at the workshop.<br />
the event was organized by the university of paderborn<br />
and implemented by the IHp.
K o n F e r e n Z e n u n d w o r K s h o p s – c o n F e r e n c e s a n d w o r K s h o p s<br />
Internationale Konferenz „Extended Defects in Semiconductors“,<br />
17. – 22. September <strong>2006</strong>, Halle.<br />
Wichtige Themen waren das Auftreten von Defekten bei<br />
der Erzeugung von Nanostrukturen sowie der Vergleich von<br />
Experimenten und der theoretischen Beschreibung mehrdimensionaler<br />
Defekte und Nanostrukturen in Halbleitern.<br />
Ein Mitarbeiter des <strong>IHP</strong> war einer der beiden Vorsitzenden<br />
der Veranstaltung.<br />
Fünfter <strong>IHP</strong>-Workshop „High-Performance SiGe<br />
BiCMOS for Wireless and Broadband Communication”,<br />
25. September <strong>2006</strong>, Frankfurt (Oder).<br />
Auf diesem jährlich stattfindenden Kooperationsworkshop<br />
informierte das <strong>IHP</strong> über seine neuesten<br />
Forschungsergebnisse. Schwerpunkte waren die BiC-<br />
MOS-Technologien und deren Verfügbarkeit für MPW &<br />
Prototyping sowie neueste Hochfrequenzschaltungen.<br />
Der Workshop wurde durch das <strong>IHP</strong> organisiert und unter<br />
Einbeziehung von Partnern durchgeführt.<br />
Zweites Tutorial „<strong>IHP</strong> Design Kits”,<br />
26. – 27. September <strong>2006</strong>, Frankfurt (Oder).<br />
Im Anschluß an den Workshop vom 25. September fand<br />
ein zweitägiges Tutorial statt, bei dem die Teilnehmer<br />
die zur Nutzung der <strong>IHP</strong>-Technologien notwendigen<br />
Spezialkenntnisse erlernen bzw. vertiefen konnten.<br />
Die Veranstaltung wurde vom <strong>IHP</strong> organisiert und durch<br />
die advICo GmbH durchgeführt.<br />
Symposium „SiGe: Materials, Processing, and Devices“<br />
innerhalb der 210. ECS Tagung, 29. Oktober –<br />
3. November <strong>2006</strong>, Canun, Mexico.<br />
Die Konferenz war die zweite Veranstaltung im Rahmen einer<br />
Konferenzreihe, die alle zwei Jahre stattfindet. Schwerkunkte<br />
waren SiGe und Ge vom Material über Aspekte der<br />
Prozesstechnologie bis zu Bauelementeanwendungen.<br />
Ein Mitarbeiter des <strong>IHP</strong> ist für den Prozesstechnologieteil<br />
der Konferenz verantwortlich.<br />
international conference “extended defects in<br />
semiconductors”, september 17 – 22, <strong>2006</strong>, halle.<br />
Key subjects were the appearance of defects in relation<br />
to the formation of nanostructures and the comparison<br />
of experiments and the theoretical description of extended<br />
defects and nanostructures in semiconductors.<br />
An IHp member was one of the two chairpersons of<br />
the conference.<br />
Fifth ihp-workshop “high-performance siGe bic-<br />
Mos for wireless and broadband communication”,<br />
september 25, <strong>2006</strong>, Frankfurt (oder).<br />
At this annual cooperation workshop the IHp informed<br />
about its newest research results. In the focus<br />
were the BiCMoS technologies and their availability<br />
for MpW & prototyping as well as the latest high-frequency<br />
circuits.<br />
the workshop was organized by the IHp and implemented<br />
together with partners.<br />
second tutorial “ihp design Kits”,<br />
september 26 – 27, <strong>2006</strong>, Frankfurt (oder).<br />
Following the workshop on September 25, a two day<br />
tutorial took place during which the participants<br />
learned and reinforced the special knowledge necessary<br />
for the utilization of the IHp technologies.<br />
the tutorial was organized by the IHp and implemented<br />
by the advICo GmbH.<br />
symposium “siGe: Materials, processing, and devices”<br />
within the 210 th ecs Meeting, october 29 –<br />
november 3, <strong>2006</strong>, canun, Mexico.<br />
the conference was the second event within a biannual<br />
series. SiGe and Ge, from materials to aspects of<br />
processing and device applications, were in the focus.<br />
An IHp scientist is responsible for the technology<br />
part of the conference.<br />
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Z u s a M M e n a r b e i t u n d p a r t n e r – c o l l a b o r a t i o n a n d p a r t n e r s<br />
Collaboration and Partners
Industrie / Industry*<br />
Z u s a M M e n a r b e i t u n d p a r t n e r – c o l l a b o r a t i o n a n d p a r t n e r s<br />
AdMoS GmbH, Germany<br />
advICo microelectronics GmbH, Germany<br />
Airbus Deutschland GmbH, Germany<br />
AIXtRon AG, Germany<br />
Alcatel Sel AG, Germany<br />
Alcatel-lucent, Germany<br />
Alfa Microonde snc, Italy<br />
Alpha europe GmbH, Germany<br />
Alpha pacific technologies Co ltd., taiwan<br />
Applied Ceramics europe AG, lichtenstein<br />
Applied Materials GmbH, Germany<br />
ASM europe B.V., the netherlands<br />
Atmel Germany GmbH, Germany<br />
Bio Sensor technologie GmbH, Germany<br />
Centellax Inc., uSA<br />
centrotherm GmbH+Co. KG, Germany<br />
Coreoptics GmbH, Germany<br />
DaimlerChrysler Research Centre, Germany<br />
eADS Deutschland GmbH, Germany<br />
enpirion Inc., uSA<br />
eurescom GmbH, Germany<br />
eVision Systems, Germany<br />
Freescale Semiconductor Germany GmbH, Germany<br />
Gaisler Research, Sweden<br />
Genesys ltd., ukraine<br />
GWt-tuD GmbH, Germany<br />
HtC Consulting, Germany<br />
IBM Research GmbH, Switzerland<br />
IMSt GmbH, Germany<br />
Infineon technologies AG, Munich, Germany<br />
Infineon technologies AG, ulm, Germany<br />
InnoSent GmbH, Germany<br />
Kayser-threde GmbH, Germany<br />
KMSD, lithuania<br />
KotuRA Inc., uSA<br />
leica Camera AG, Germany<br />
lesswire AG, Germany<br />
lintec Information technologies AG, Germany<br />
MeDAV GmbH, Germany<br />
Mergeoptics GmbH, Berlin, Germany<br />
MIpS technologies International AG, Germany<br />
nokia Research Centre, Germany<br />
phasor Solutions, uK<br />
philips Consumer electronics B.V. , the netherlands<br />
philips Research laboratories Aachen, Germany<br />
philotech GmbH, Germany<br />
Qimonda AG Dresden, Germany<br />
Robert Bosch GmbH, Germany<br />
Rohde & Schwarz GmbH & Co. KG, Germany<br />
Sennheiser electronic GmbH & Co. KG, Germany<br />
Siemens AG, Germany<br />
Siltronic AG, Germany<br />
Sitec GmbH, Germany<br />
St<strong>Microelectronics</strong> S.R.l., Italy<br />
Stratalight Communications Inc., uSA<br />
telefunken Radio Communication Systems GmbH und<br />
Co. KG, Germany<br />
teS electronic engineering GmbH, Germany<br />
teS electronic Solutions GmbH, Germany<br />
texas Instruments Deutschland GmbH, Germany<br />
t-Systems nova GmbH, Germany<br />
umicore, Belgium<br />
Wisair ltd., Israel<br />
* Ausgewählte Partner / Selected partners<br />
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Z u s a M M e n a r b e i t u n d p a r t n e r – c o l l a b o r a t i o n a n d p a r t n e r s<br />
Forschungsinstitute und Universitäten /<br />
research institutes and universities*<br />
Aalen university of Applied Sciences, Germany<br />
Astron, the netherlands<br />
Brandenburg technical university, Germany<br />
Brandenburg university of Applied Sciences, Germany<br />
Budapest university of technology and economics,<br />
Hungary<br />
etH Zurich, Switzerland<br />
etRI, Daejeon, Korea<br />
european Synchrotron Radiation Facility, France<br />
european university Viadrina of Frankfurt (oder),<br />
Germany<br />
Fraunhofer IIS, erlangen, Germany<br />
Fraunhofer IpMS, Dresden, Germany<br />
Fraunhofer IZM, Berlin, Germany<br />
Fraunhofer HHI, Berlin, Germany<br />
Freie universität Berlin, Germany<br />
Friedrich-Alexander-university erlangen-nuremberg,<br />
Germany<br />
Friedrich-Schiller-university Jena, Germany<br />
Georg-August-university of Göttingen, Germany<br />
Georgia Institute of technology, uSA<br />
Hahn-Meitner Institute Berlin, Germany<br />
Humboldt university of Berlin, Germany<br />
Institute of Computer Science, ICS-FoRtH, Greece<br />
Istanbul technical university, turkey<br />
ludwig-Maximilians-university of Munich, Germany<br />
Max planck Institute of Microstructure physics,<br />
Germany<br />
Microsoft Innovation Center, Aachen, Germany<br />
national nanoFab Center (nnFC), Korea<br />
national taiwan university, taiwan<br />
politecnico di torino, Italy<br />
progress <strong>Microelectronics</strong> Research Institute,<br />
Moscow, Russia<br />
Radiolabs, Rome, Italy<br />
Rome university “la Sapienza”, Italy<br />
Ruhr-university of Bochum, Germany<br />
RWtH Aachen university, Germany<br />
Sabanci university Istanbul, turkey<br />
Southeast university nanjing, China<br />
Szczecin university of technology, poland<br />
technical university of Berlin, Germany<br />
technical university of Braunschweig, Germany<br />
technical university of Dresden, Germany<br />
technical university of Ilmenau, Germany<br />
technical university of Munich, Germany<br />
technical university of ukraine, ukraine<br />
tohoku university Sendai, Japan<br />
university di Firenze, Italy<br />
university of Applied Sciences Wildau, Germany<br />
university of Bergen, norway<br />
university of Bremen, Germany<br />
university of Bristol, uK<br />
university of California, uSA<br />
university of Cantabria, Spain<br />
university of Chicago, uSA<br />
university of Dortmund, Germany<br />
university of Karlsruhe, Germany<br />
university of Kassel, Germany<br />
university of osnabrück, Germany<br />
university of oulo, Finland<br />
university of paderborn, Germany<br />
university of potsdam, Germany<br />
university of Stuttgart, Germany<br />
university of ulm, Germany<br />
Victoria university of Manchester, uK<br />
Zhejiang university, China<br />
* Ausgewählte Partner / Selected partners
Z u s a M M e n a r b e i t u n d p a r t n e r – c o l l a b o r a t i o n a n d p a r t n e r s<br />
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G a s t w i s s e n s c h a F t l e r u n d s e M i n a r e – G u e s t s c i e n t i s t s a n d s e M i n a r s<br />
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Guest Scientists and Seminars
G a s t w i s s e n s c h a F t l e r u n d s e M i n a r e – G u e s t s c i e n t i s t s a n d s e M i n a r s<br />
Gastwissenschaftler / Guest scientists<br />
Gastwissenschaftler Institution Forschungsgebiet<br />
Guest scientists institution research area<br />
1. Mr. e. o. Ates Istanbul technical university, turkey process technology<br />
2. prof. M. Bartel Aalen university of Applied Sciences, Circuit Design<br />
Germany<br />
3. prof. M. Bäumler university of Bremen, Germany Materials Research<br />
4. Dr. M. Grudanov Genesis ltd., Kiev, ukraine System Design<br />
5. Dr. p. Hartogh Max planck Institute for Solar System System Design<br />
Research, lindau, Germany<br />
6. Mr. A. Hudyryev national technical university process technology<br />
of ukraine, Kiev, ukraine<br />
7. Dr. K. Maharatna university of Bristol, uK System Design<br />
8. prof. J. Murota tohoku university, Sendai, Japan process technology<br />
9. Mr. A. Schäfer university of Bremen, Germany Materials Research<br />
10. prof. V. e. Stikanov national technical university Circuit Design<br />
of ukraine, Kiev, ukraine<br />
11. prof. Ch. teichert university of leoben, Austria Materials Research<br />
12. prof. J. Wollschläger university of osnabrück, Germany Materials Research<br />
13. Dr. D. Zheng Kotura Inc., Monterey park, uSA process technology<br />
A n n u A l R e p o R t 2 0 0 6<br />
8
G a s t w i s s e n s c h a F t l e r u n d s e M i n a r e – G u e s t s c i e n t i s t s a n d s e M i n a r s<br />
Seminare / seminars<br />
Vortragender Institution Thema<br />
presenter institution topic<br />
1. Dr. K. Bach X-FAB Semiconductor Foundry “SoI CMoS technologies for<br />
AG, erfurt, Germany Higher Voltages“<br />
2. prof. M. Böhm university of Siegen, Germany “technologies and Components for a<br />
Monolithic Integrated Chemical lab<br />
on a Microchip”<br />
3. Mr. H. Campanella Centro nacional de Micro- “thin-film piezoelectric Resonators (FBAR)<br />
electrónica - Instituto de for High-frequency Applications at CnM”<br />
Microelectrónica de Barcelona,<br />
Spain<br />
4. Mr. A. Chakravorty technical university of Dresden, “A perspective of Bipolar transistor Compact<br />
Germany Modeling with HICuM”<br />
5. prof. R. Fornari Institute of Crystal Growth, Berlin, “Growth of Ferroelectric layers by liquid<br />
Germany Injection MoCVD”<br />
6. prof. u. Gösele Max planck Institute of Micro- “Silicon – new Areas of Application“<br />
structure physics, Halle, Germany<br />
7. Dr. p. Hartogh Max planck Institute for Solar ”Solar System Research by passive<br />
System Research, lindau, Germany Microwave Remote Sensing“<br />
8. Dr. M. Frank IBM, t.J. Watson Research Center, ”oxide-semiconductor Interfaces:<br />
Yorktown Hights, uSA High-k Gate Dielectrics on Si, Ge, and GaAs“<br />
9. prof. e. Kasper university of Stuttgart, Germany “Fast IR-sensitive Ge-Detectors on Si“<br />
82 A n n u A l R e p o R t 2 0 0 6
G a s t w i s s e n s c h a F t l e r u n d s e M i n a r e – G u e s t s c i e n t i s t s a n d s e M i n a r s<br />
Vortragender Institution Thema<br />
presenter institution topic<br />
10. prof. p. Kücher Fraunhofer Center nanoelectronic ”nanoelectronics Beyond Atomic Scaling –<br />
technologies, Dresden, Germany How to Integrate Research into<br />
Manufacturing“<br />
11. prof. H. lichte technical university of Dresden, ”electron Microscopy and electron<br />
Germany Holography for the Investigation of<br />
nano-structures“<br />
12. prof. S. Mantl Research Centre of Jülich, ”new Materials and Concepts for<br />
Germany nano-MoSFets“<br />
13. Dr. M. Mertig technical university of Dresden, ”Bio-nanotechnology<br />
Germany (nanowires and networks)“<br />
14. prof. J. Reif Brandenburg technical university, ”laser-Ablation-Initiated Self-organized<br />
Cottbus, Germany nanostructures on Silicon Surface“<br />
15. Mr. R. Richter Max planck Institute of physics, ”Silicon Radiation Detectors for X-ray<br />
Munich, Germany Astronomy and High-energy physics”<br />
16. prof. H. Strunk Friedrich Alexander university ”Stress Relaxation in Semiconductor<br />
of erlangen-nuremberg, Germany Heterostructures“<br />
17. prof. Ch. teichert university of leoben, Austria ”Self-organization of Semiconductor<br />
nanostructures“<br />
18. prof. e. Weber Fraunhofer Institute for Solar ”the Future of Silicon-based<br />
energy Systems, Freiburg, Germany photovoltaics“<br />
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p u b l i K a t i o n e n – p u b l i c a t i o n s<br />
Publications
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
A Wireless Communication Platform for Long-Term Health Monitoring<br />
Daniel Dietterle, Jean-Pierre Ebert, Gerald Wagenknecht, and Rolf Kraemer<br />
<strong>IHP</strong> microelectronics GmbH, Wireless Communication Systems, PO Box 1466,<br />
15204 Frankfurt (Oder), Germany<br />
{dietterle, ebert, wagenknecht, kraemer}@ihp-microelectronics.com<br />
Abstract<br />
Recent advances in wireless communication technology<br />
have opened the way for long-term health monitoring applications.<br />
In this paper, we introduce the BASUMA project,<br />
which will develop novel biomedical sensors and a wireless<br />
communication platform that provides connectivity among<br />
these sensors. This enables new, intelligent medical applications.<br />
The design and implementation of the wireless medium<br />
access control (MAC) protocol is the major focus of<br />
this paper. We describe our work-in-progress on hardware/software<br />
co-design, in particular, our co-simulation<br />
framework for profiling and performance estimation.<br />
1. Introduction<br />
The application of sensor networks in health care has<br />
attracted much research work ( [6], [7]) in recent years.<br />
Advances in system-on-chip (SoC) design and wireless<br />
communication technology enable the development of tiny,<br />
battery-powered sensor nodes that can be worn on the human<br />
body. Wireless communication among the sensors and<br />
to external medical devices allow patients to move more<br />
freely in a hospital environment or even return to their<br />
homes while their health is being monitored.<br />
This can lead to cost savings due to shorter stays in a<br />
hospital and to an increased quality of life. Furthermore,<br />
long-term continuous health monitoring for chronically ill<br />
patients or patients belonging to a risk group helps to diagnose<br />
symptoms of a disease much earlier than at regular or<br />
emergency visits of a doctor.<br />
Several technological challenges have to be faced before<br />
a working health monitoring system can be deployed. One<br />
aspect concerns the development of miniaturized biomedical<br />
sensors that are battery-powered and still provide sufficient<br />
accuracy. Moreover, new algorithms for diagnosing<br />
the patient’s health state based on possibly inaccurate, however<br />
continuous sensor measurements and combining mea-<br />
proc. ubiCare‘06, 474 (<strong>2006</strong>)<br />
surements from different sensors have to be designed and<br />
validated in practice. Reliability of the system is another<br />
major concern as it must operate correctly without human<br />
intervention for several weeks or months under any circumstances.<br />
The long operating times without replacing batteries<br />
requires an efficient system and the application of effective<br />
power management strategies.<br />
These challenges are addressed by the BASUMA (Body<br />
Area System for Ubiquitous Multimedia Applications) research<br />
project [12]. Within the scope of this interdisciplinary<br />
project, novel biomedical sensors and medical algorithms<br />
for the evaluation of sensor readings as well as<br />
a generic wireless communication platform will be developed.<br />
This paper focuses on the design and implementation<br />
of the BASUMA wireless medium access control (MAC)<br />
protocol for a body area network (BAN). The protocol implementation<br />
needs to be reliable, fulfill the tight resource<br />
constraints, and in particular consume very low power. Because<br />
of its power saving mechanisms and reservationbased<br />
channel access method we base our MAC protocol<br />
on the IEEE 802.15.3 standard [1].<br />
We have modeled the MAC protocol in the Specification<br />
and Description Language (SDL) [2]. However, the timecritical<br />
protocol functionality cannot be realized completely<br />
in software, unless an extremely fast processor is used, leading<br />
to unacceptably high power consumption. Therefore,<br />
our approach is to partition the protocol functionality into<br />
hardware and software.We use profiling of the system to decide<br />
about the hardware/software partitioning and have developed<br />
a co-simulation framework that allows connecting<br />
an instruction set simulator with an SDL simulator. Hardware/software<br />
co-design is not yet completed, therefore we<br />
cannot report any results of this process.<br />
The paper is organized as follows. In Sect. 2, we briefly<br />
introduce the technical objectives of the BASUMA project.<br />
After that, in Sect. 3, our design flow of the MAC protocol<br />
development and results achieved so far are presented. In<br />
Sect. 4, our co-simulation framework is described in detail.<br />
Finally, in Sect. 5, we give a summary of the paper.<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
2. Objectives of the BASUMA Project<br />
BASUMA [12] (Body Area System for Ubiquitous Multimedia<br />
Applications) is a research project started in 2004<br />
that has the objective to develop a platform for wireless<br />
communication around the human body. This platform<br />
will consist of hardware and software components that are<br />
specifically designed for small, low-power devices.<br />
The capabilities of the BASUMA platform are to be<br />
demonstrated with a medical application. A number of<br />
battery-powered sensor nodes measuring various bioparameters,<br />
such as heart rate, temperature, or ECG are attached<br />
to the human body and form a wireless network. Additionally,<br />
novel biomedical sensors, such as lactate or ROS<br />
(reactive oxygen species) sensors, are developed within the<br />
scope of the project. While being subject to imperfections<br />
in the measuring environment and much less available energy<br />
compared to stationary laboratory equipment, the sensors<br />
need to be sufficiently sensitive to draw sound conclusions<br />
about the state of health of the patient.<br />
The body area (sensor) network forms the basis for longterm<br />
health monitoring of chronically ill patients. The signals<br />
measured by the sensor nodes are locally analyzed (preprocessed)<br />
and evaluated within the node or network, and<br />
communication with a remote medical center is only initiated<br />
when necessary. An application scenario and the BA-<br />
SUMA hardware architecture are shown in Fig. 1. All nodes<br />
ECG<br />
Lung<br />
sound<br />
Blood<br />
pressure<br />
Accelerometer<br />
86 A n n u A l R e p o R t 2 0 0 6<br />
BASUMA wireless sensor node Sensor<br />
LEON2<br />
Processor<br />
Digital<br />
Baseband<br />
Memory<br />
Body Area Network<br />
(BAN)<br />
Input /<br />
Output<br />
UWB<br />
Frontend<br />
Figure 1. Body area network and BASUMA<br />
hardware architecture<br />
in the BAN are in communication range of each other, hence<br />
multi-hop communication is not required. We investigate<br />
ultra-wide band (UWB) technology as the means of communication.<br />
We assume the IEEE 802.15.3 MAC protocol<br />
[1] as very suitable for medical applications due to its offered<br />
functionality such as reserved time slots, power management,<br />
security features, and network coordinator han-<br />
dover. We have reduced the complexity of the protocol by<br />
omitting not required functions.<br />
Our MAC protocol design flow including hardware/software<br />
co-design is described in more detail in the<br />
following sections. It can be applied not only to communication<br />
protocol implementation, but to any embedded systems<br />
application development as it puts special emphasis on<br />
reliability and efficiency.<br />
3. MAC Protocol Design and Implementation<br />
The starting point of our design flow was the IEEE<br />
802.15.3 MAC protocol specification [1]. We have modeled<br />
the MAC protocol in the Specification and Description<br />
Language (SDL) [2]. SDL is a formal language that<br />
allows systems to be modeled, simulated, verified, and implemented.<br />
It is a popular language for protocol modeling<br />
(cf. [14], [15]). Telelogic TAU SDL Suite [3] is a commercially<br />
available SDL tool that we are using for our research<br />
work. SDL implementations derived by that tool consist<br />
of automatically generated C code and a run-time environment.<br />
By extensively simulating the model we could verify<br />
the correct functionality of our model.<br />
The next step was to target the model to the real-time<br />
operating system (RTOS) Reflex. For this purpose, we developed<br />
a so-called Tight Integration model for Reflex. This<br />
replaces the SDL run-time environment with a tailored, very<br />
efficient RTOS integration layer.<br />
Some of the MAC protocol functionality underlies tight<br />
timing constraints, for instance acknowledgment frame<br />
transmission has to start exactly 10 microseconds after the<br />
end of a received frame. This cannot be achieved with a<br />
pure software implementation as it would require a processor<br />
clocked at a very high frequency leading to high<br />
power consumption. Therefore, some protocol functions<br />
need to be realized in hardware. To find a reasonable hardware/software<br />
partitioning, we apply profiling of the software<br />
model. The functionality that has been mapped to the<br />
hardware partition will then be designed using the hardware<br />
description language VHDL. Finally, software and hardware<br />
are integrated in a test system.<br />
Our design flow is further explained in the following<br />
paragraphs.<br />
3.1. Protocol Modeling in SDL<br />
The MAC protocol was modeled in SDL and simulated<br />
using Telelogic TAU SDL Suite. The SDL description of<br />
system behavior is based on communicating extended finite<br />
state machines (CEFSM) that are executed concurrently.<br />
State machines are represented by SDL processes. Processes<br />
communicate with each other and the system environment<br />
by exchanging asynchronous signals that may
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carry any number of parameters. SDL also provides timers<br />
that can be configured to generate signals at defined points<br />
in time. Each process in an SDL system contains a FIFO<br />
(First-In-First-Out) input buffer into which the received signals<br />
and timer events are queued.<br />
In our model, the protocol functionality has been divided<br />
into a number of SDL processes, similar to an objectoriented<br />
design approach. Each process is responsible for a<br />
well-defined functionality. For instance, there are processes<br />
that are only needed for devices that are capable to act as<br />
piconet coordinator (PNC). A more detailed description of<br />
our SDL model can be found in [11].<br />
It is possible to connect several instances of the MAC<br />
protocol model to form a network that can be simulated. It<br />
is also possible to formally verify the protocol, however we<br />
used extensive simulation runs in order to validate correct<br />
protocol behaviour. An SDL testbench drives different test<br />
scenarios, for instance, starting and joining a piconet, or<br />
asynchronous and isochronous data exchange.<br />
3.2. Operating System Integration<br />
The validated SDL model is the basis for the MAC protocol<br />
implementation by an automatic transformation. The effort<br />
of re-implementing the protocol in C/C++ would be too<br />
high and error-prone compared to an optimization approach<br />
where inefficient SDL concepts in the model are replaced<br />
by equivalent functions with less overhead. Additionally,<br />
the time to achieve a fully tested implementation is considerable<br />
shortened. Here, instead of using an SDL run-time<br />
environment, we tightly integrate the SDL model with the<br />
underlying OS, in our case Reflex.<br />
Reflex [9] is a tiny, event-flow oriented OS for<br />
deeply embedded systems [8]. Although quite similar to<br />
TinyOS [10] — the operating system most often used for<br />
wireless sensor nodes — we believe it is better tailored<br />
for our system because of its earliest-deadline-first process<br />
scheduling strategy. While TinyOS tasks run to completion<br />
before any other task is scheduled, time-critical tasks<br />
(activities) in Reflex will interrupt lower-priority activities.<br />
Such a behaviour is difficult to achieve in TinyOS. We have<br />
ported Reflex for the LEON2 processor, which we selected<br />
as the general-purpose processor for the BASUMA hardware<br />
platform.<br />
The required memory space for the operating system Reflex,<br />
the integration layer, and a simple SDL system was<br />
measured to be about 20 kbytes for a system targeted for<br />
the LEON2 processor. Further details can be found in [13].<br />
3.3. Hardware/Software Co-Design<br />
The objective of the hardware/software co-design is to<br />
partition the pure software system into hardware and soft-<br />
ware. While being less flexible and more time-consuming<br />
to design than software, hardware implementations can<br />
achieve an order of 100 or 1000 higher processing efficiency.<br />
Thus, by mapping time-critical tasks to hardware, it<br />
is possible to clock the system at a moderate (10-50 MHz)<br />
frequency, thereby minimizing the energy consumption.<br />
To identify bottlenecks in the pure software implementation<br />
and to estimate the required clock frequency to meet<br />
all timing constraints, we perform a profiling of the software.<br />
For that purpose, the software is simulated using the<br />
LEON2 instruction set simulator (ISS) TSIM [4]. TSIM<br />
allows profiling of individual functions. This way, we can<br />
identify functions that are most often called or that consume<br />
most of the processing time.<br />
In order to see whether the protocol implementation<br />
meets its timing requirements, we couple the ISS with the<br />
SDL simulator that simulates a body area network on an<br />
abstract time basis. Only the ISS consumes real time when<br />
executing instructions while, in the SDL simulation, time<br />
advances only when SDL timers expire. Both simulators<br />
are synchronized, so that there is a common time basis and<br />
the correct order of events is ensured. Our co-simulation approach<br />
is presented in the following Sect. 4 in more detail<br />
and shown schematically in Fig. 2.<br />
Abstract<br />
protocol<br />
model<br />
SDL simulator<br />
Abstract<br />
protocol<br />
model<br />
Wireless link model<br />
Instruction set<br />
simulator<br />
Protocol<br />
implement.<br />
model<br />
Figure 2. Co-simulation framework<br />
3.4. Hardware Accelerator Design<br />
The protocol functionality that has been mapped to hardware<br />
in the previous step will be designed in VHDL. As we<br />
are targeting system-on-chip (SoC) implementations, this<br />
protocol accelerator becomes a block of our SoC hardware<br />
platform, attached to the on-chip AMBA high performance<br />
bus (AHB).<br />
Additionally, the protocol accelerator has got an interface<br />
to the physical layer implementation, such that the payload<br />
of received and transmitted frames passes through the<br />
accelerator and can be processed (e.g., by CRC and AES<br />
algorithms) on the fly. When the hardware accelerator is<br />
designed to be a bus master, it can access the RAM to store<br />
or read frame data independently of the processor.<br />
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The use of hardware accelerators as an addition to a<br />
general-purpose processor, which handles all non-timecritical<br />
protocol functionality, has been reported previously<br />
in the literature (cf. [16], [17]) for wireless MAC protocol<br />
implementations. Our hardware platform around<br />
the LEON2 processor including the protocol accelerator is<br />
shown in Fig. 3.<br />
LEON2<br />
proc.<br />
AHB<br />
Controller<br />
Protocol<br />
Accelerator<br />
Memory<br />
Controller<br />
PROM<br />
Memory bus<br />
88 A n n u A l R e p o R t 2 0 0 6<br />
I/O port<br />
Baseband<br />
Processing<br />
IrqCtrl Timers<br />
SRAM<br />
UARTS<br />
APB<br />
RF Frontend<br />
AHB<br />
AHB/APB<br />
Bridge<br />
Figure 3. Block diagram of the BASUMA hardware<br />
platform<br />
3.5. Integration and Test<br />
The final step in the design flow is the integration of the<br />
hardware and software implementations and a test of the<br />
complete system. We are planning to fabricate the wireless<br />
communication platform as a single chip to minimize the<br />
overall power consumption. However, before we tape out<br />
the first SoC, we will test the complete digital system on<br />
an FPGA board and connect it to an external RF frontend<br />
board. The GR-CPCI-XC2V development board [5] from<br />
Pender Electronic Design is well suited for this purpose.<br />
4. Co-Simulation Approach<br />
In this section, we will describe our co-simulation framework<br />
that allows us to join together the Telelogic TAU SDL<br />
simulator with the LEON2 instruction set simulator TSIM<br />
[4]. An application of this co-simulation approach is shown<br />
in Fig. 2.<br />
The SDL simulation as well as the TSIM simulation<br />
both have their own simulation time. In order to guarantee<br />
semantically correct co-simulation runs, both simulations<br />
must be synchronized. In the case of the ISS, time<br />
advances at each processed instruction, while our (abstract)<br />
SDL simulation does not consume time when transitions are<br />
simulated. Only when there are no more active transitions,<br />
the simulation time can advance to the next scheduled SDL<br />
timer or external event.<br />
In our framework, the co-simulation is controlled by the<br />
SDL simulator. The SDL simulator processes transitions in<br />
the SDL model and queries the environment for input signals<br />
by calling the function xInEnv(). It can also output<br />
signals to the environment through the function xOutEnv().<br />
Together with the functions xInitEnv() and xCloseEnv() this<br />
is the interface that Telelogic provides to interact with external<br />
software components from the SDL simulator (Fig. 4).<br />
SDL simulator TSIM library<br />
SDL<br />
model<br />
xInitEnv()<br />
xCloseEnv()<br />
xInEnv()<br />
xOutEnv()<br />
Environment<br />
tsim_init()<br />
tsim_exit()<br />
tsim_cmd()<br />
I/O module<br />
get_signal()<br />
put_signal()<br />
Part of the co−simulation framework<br />
write mem<br />
read mem<br />
Figure 4. Components of the co-simulation<br />
framework<br />
At simulation start, the xInitEnv() function is called by<br />
the SDL simulator. From this function, the ISS is initialized<br />
and the application to be simulated by it is loaded. The<br />
SDL simulator then simulates all active transitions at timestamp<br />
0. When there are no more transitions, it calls the<br />
xInEnv() function to check whether there are external signals<br />
as inputs for the SDL model.<br />
As a parameter of the xInEnv() function, the timestamp<br />
of the next SDL timer that is going to expire is passed. Since<br />
there are no active transitions and no other sources of signals<br />
that could trigger a transition before the indicated timestamp,<br />
it is safe to advance TSIM until it reaches this point<br />
in time in its simulation. The call to continue TSIM is made<br />
from within xInEnv().<br />
When the external (i.e. TSIM simulated) system sends<br />
a signal to the SDL system during that simulation, TSIM<br />
is stopped immediately and control resumes in the xInEnv()<br />
function. Here, the current TSIM simulation time is read<br />
and the abstract SDL simulation time is advanced to reflect<br />
the same point in time. The signal sent from the external<br />
system is input into the SDL model — this is the purpose of<br />
calling the xInEnv() function by the SDL simulator.<br />
When all active transitions have been simulated,<br />
xInEnv() is called again. Consequently, the ISS will be<br />
resumed. With this approach, the SDL simulation time<br />
cannnot advance ahead of the time of the instruction set simulator,<br />
which might lead to a signal being sent from the ISS<br />
to the SDL simulation too late.
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It is also possible that signals are sent to the TSIM system<br />
from the abstract SDL simulation. For that purpose, a<br />
signal queue has been implemented that stores these signals<br />
and can be read from the application simulated in the ISS.<br />
Whenever a signal is written into that queue, an interrupt<br />
request is created so that the application — after it has been<br />
resumed from xInEnv() — will first read these signals and<br />
process them, in turn.<br />
5. Conclusions<br />
In this paper, we have presented our design flow for a<br />
body area network communication platform and put special<br />
focus on the MAC protocol hardware/software co-design.<br />
The MAC protocol has been modeled in SDL. We are using<br />
the CAdvanced code generator from the Telelogic TAU<br />
SDL Suite for an automatic transformation of the model. A<br />
Tight Integration model targeting the operating system Reflex<br />
has been developed.<br />
We have demonstrated the feasibility of our approach for<br />
resource-constrained embedded systems such as wireless<br />
sensor nodes enabling SDL-based software development for<br />
this class of devices. This could lead to verified and reliable<br />
systems that can be used for long-term, unsupervised applications.<br />
The use of hardware accelerators that take over timecritical<br />
and processing-intensive tasks from the processor is<br />
intended. This way, the processor can be clocked at a lower<br />
frequency and the power consumption is decreased. A cosimulation<br />
framework joining an SDL simulation with an<br />
instruction set simulator has been presented in this paper.<br />
This co-simulation framework will help us to profile our<br />
implementation model.<br />
6. Acknowledgments<br />
This work was partly funded by the German federal ministry<br />
of economics and labour (BMWA) under grant no. 01<br />
MT 306.<br />
References<br />
[1] IEEE Standard 802, ”Part 15.3: Wireless Medium Access<br />
Control (MAC) and Physical Layer (PHY) Specifications for<br />
High Rate Wireless Personal Area Networks,” 2003.<br />
[2] ITU-T, ”ITU-T Recommendation Z.100. SDL: Specification<br />
and Description Language,” 1999.<br />
[3] Telelogic AB. (2004). Telelogic Tau SDL Suite. [Online].<br />
Available: http://www.telelogic.com/products/tau/sdl<br />
[4] Gaisler Research AB. (2005). TSIM Simulator User’s Manual.<br />
[Online]. Available: http://www.gaisler.com/doc/tsim-<br />
1.3.3.pdf<br />
[5] Pender Electronic Design GmbH. (2005). GR-CPCI-<br />
XC2V Development Board User Manual. [Online].<br />
Available: http://www.pender.ch/docs/GR-CPCI-<br />
XC2V user manual.pdf<br />
[6] E. Jovanov et al. ”A wireless body area network of intelligent<br />
motion sensors for computer assisted physical rehabilitation,”<br />
in Journal of Neuroengineering and Rehabilitation,<br />
2(1):6, 2005<br />
[7] R. Bults et al. ”Body Area Networks for Ambulant Patient<br />
Monitoring Over Next Generation Public Wireless Networks,”<br />
in Proc. 3rd IST Mobile and Wireless Communications<br />
Summit, 2004<br />
[8] K. Walther et al. ”Generic Trigger Variables and Event Flow<br />
Wrappers in Reflex,” in ECOOP — Workshop on Programming<br />
Languages and Operating Systems, 2004<br />
[9] J. Nolte. (2005). Reflex - Realtime Event FLow EXecutive.<br />
[Online]. Available: http://www-bs.informatik.tucottbus.de/38.html?&L=2<br />
[10] J. Hill et al. ”System Architecture Directions for Networked<br />
Sensors,” in Architectural Support for Programming Languages<br />
and Operating Systems, 2000, pp. 93–104<br />
[11] D. Dietterle et al. ”High-Level Behavioral SDL Model for<br />
the IEEE 802.15.3 MAC Protocol,” in Proc. of the 2nd International<br />
Conference on Wired/Wireless Internet Communications<br />
(WWIC), P. Langendörfer et al. (eds). Lecture Notes<br />
in Computer Science, Vol. 2957. Springer-Verlag, Berlin<br />
Heidelberg New York, 2004, pp. 165–176<br />
[12] (2005). BASUMA - Body Area System for Ubiquitous<br />
Multimedia Applications. [Online]. Available:<br />
http://www.basuma.de<br />
[13] G. Wagenknecht et al. ”Transforming Protocol Specifications<br />
for Wireless Sensor Networks into Efficient Embedded<br />
System Implementations,” submitted to the Third European<br />
Workshop on Wireless Sensor Networks (EWSN <strong>2006</strong>).<br />
[14] M. Hännikäinen et al. ”Using SDL for Implementing a<br />
Wireless Medium Access Control Protocol,” in IEEE International<br />
Symposium on Multimedia Software Engineering<br />
(MSE 2000), 2000, pp 229–236<br />
[15] E. Grass et al. ”On the Single-Chip Implementation of a<br />
Hiperlan/2 and IEEE 802.11a Capable Modem,” in IEEE<br />
Personal Communications, vol. 8, no. 6, December 2001,<br />
pp. 48–57<br />
[16] M. Haroud et al. ”HW accelerated ultra wide band MAC<br />
protocol using SDL and SystemC,” in Proc. IEEE Radio and<br />
Wireless Conference (RAWCON’04), IEEE, 2004.<br />
[17] D. Dietterle et al. ”Design of a Hardware Accelerator for a<br />
Power-Optimized Implementation of the IEEE 802.11 MAC<br />
Layer,” in Proc. 3rd Int. Conf. on Internet Computing, 2002,<br />
pp. 225–230<br />
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�<br />
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
proc. Ieee Workshop on Design and Diagnostics of electronic Circuits and Systems, 50 (<strong>2006</strong>)<br />
90 A n n u A l R e p o R t 2 0 0 6<br />
LEON�2:�General�Purpose�Processor�<br />
for�a�Wireless�Engine�<br />
�<br />
Z.�Stamenković,�C.�Wolf,�G.�Schoof�and�J.�Gaisler*�<br />
<strong>IHP</strong>�GmbH,�Frankfurt�(Oder),�Germany�<br />
*Gaisler�Research,�Göteborg,�Sweden�<br />
�<br />
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�<br />
I.� INTRODUCTION�<br />
�<br />
To� harness� complexity� and� decrease� time�to�market,� the�<br />
system� design� process� is� developing,� mainly� going� from�<br />
composing�designs�from�low�level�building�blocks�to�the�reuse�<br />
of� very� complex� ones.� Advanced� System�on�Chip� (SoC)�<br />
designs� are� usually� a� mix� of� externally� sourced� Intellectual�<br />
Property� (IP)� blocks� and� in�house� developed� standard�<br />
functions� and� application� specific� blocks.� We� focus� on�<br />
wireless� communication� SoCs� that� strongly� request� both�<br />
energy� saving� and� real�time� processing� solutions� to� enable�<br />
flexible�designs�according�to�customer�demands.�<br />
Our� final� goal� is� to� design� and� implement� a� wireless�<br />
engine� [1]� that� needs� to� result� in� a� multiprocessor� on� a� chip�<br />
including� a� general� purpose� processor,� custom� processors,�<br />
memory,� standard� input/output� component,� digital� baseband�<br />
and�analog�frontend�(Figure�1).�Several�projects�contribute�to�<br />
accomplish�this�task.�<br />
�<br />
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�<br />
Figure�1:�Illustration�of�the�wireless�engine�approach�<br />
�<br />
Wireless� Broadband� Network�(WBN)� project�focuses�on�<br />
highly� integrated� broadband� wireless� modems� according� to�<br />
1-4244-0185-2/06/$20.00 c�<strong>2006</strong> IEEE 50<br />
IEEE802.11a� [2]� and� HiperLAN2� [3]� standards.� The� WBN�<br />
team� developed� special� hardware/software� co�designs� that�<br />
allow�the�realization�of�wireless�modems�with�full�throughput�<br />
of�54Mb/s�including�the�MAC�layer�[4].�<br />
Wireless� Internet� (WI)� project� develops� a� new� terminal�<br />
oriented�TCP/IP�for�wireless�systems.�The�focus�is�to�raise�the�<br />
energy�efficiency�by�using�a�vertical�optimization�[5].�<br />
Mobile� Business� Engine� (MBE)� project� seeks� a� specific�<br />
application�processor�for�the�wireless�engine�that�targets�highly�<br />
efficient�encryption�operations�to�increase�wireless�privacy�and�<br />
security�[6].�<br />
Test� project� defines� a� new� Design�for�Testability� (DFT)�<br />
approach�and�techniques�for�testing�multiprocessors�on�a�chip.�<br />
To� support� these� projects,� we� develop� a� library� of�<br />
reusable� ASIC� modules� (Modular� Processor� Library� [7])�<br />
particularly�suitable�for�small,�low�power�devices,�as�required�<br />
for� a� wireless� engine.� Powerful� embedded� processors� always�<br />
play�the�crucial�role�in�such�a�library.�<br />
In� starting� phase,� we� implemented� a� high�performance�<br />
low�power�system�on�chip�based�on�LEON�2�processor�system�<br />
[8]� as� a� general� purpose� processor� of� our� wireless� engine�<br />
targeted� to� run� at� maximum� frequency� of� 80� MHz� and� with�<br />
power�consumption�of�500�mW.�<br />
The� paper� is� organized� as� follows.� The� system�<br />
architecture� as� well� as� configuration� issues� are� presented� in�<br />
Section� 2.� Integration� of� system� components� and� verification�<br />
methodology� are� presented� in� Section� 3.� � The� conclusion� is�<br />
given�in�Section�4.�<br />
�<br />
II.� SYSTEM�ARCHITECTURE�AND�CONFIGURATION�<br />
�<br />
LEON�2� processor� system� [8]� is� highly� configurable,�<br />
allowing� the� user� to� customize� it� for� a� certain� application�<br />
(selecting�different�cache�sizes,�multiplier�performance,�clock�<br />
generation,�etc.)�or�target�technology.�It�is�available�as�an�open�<br />
core� in� form� of� a� VHDL� model� describing� the� SPARC� V8�<br />
processor� core,� system� bus� and� peripheral� components� [9].�<br />
New� modules� can� easily� be� added� using� the� on�chip� system�<br />
bus�[10].�A�graphical�configuration�tool�based�on�UNIX�kernel�<br />
scripts� is� used� to� configure� the� system.� The� configuration�<br />
environment�is�modified�to�include�the�<strong>IHP</strong>’s�0.25�m�CMOS�<br />
CDR3�library�[11]�as�a�target�technology�library.�<br />
The�architecture�of�the�configured�system�is�presented�in�<br />
Figure� 2.� The� system� is� based� on� LEON�2� core� connected�<br />
through� the� AMBA� bus� to� system� peripherals.� The� core�
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
integrates�both�instruction�and�data�cache�memories�(ICACHE�<br />
and� DCACHE)� and� corresponding� cache� controllers.� It� also�<br />
includes� an� interface� to� the� AMBA� advanced� high�<br />
performance�bus�(AMBA�AHB)�and�its�controller.�A�memory�<br />
controller�is�attached�to�the�AHB.�It�provides�an�interface�to�an�<br />
external� flash� memory� and� static� RAMs.� The� slower� AMBA�<br />
advanced�peripheral�bus�(AMBA�APB)�is�attached�to�the�AHB�<br />
via� a� bridge.� Two� UARTs,� timer,� I/O� port� and� interrupt�<br />
controller�are�connected�to�the�APB.�<br />
�<br />
��������<br />
����<br />
��������<br />
�������<br />
�����������<br />
����<br />
��<br />
����<br />
����<br />
��������� ��������<br />
����<br />
������ �������<br />
�������<br />
�������<br />
����<br />
�����������<br />
����� ������<br />
�<br />
�<br />
Figure�2:�System�architecture�<br />
�<br />
��� �������������<br />
LEON�2� integer� unit� implements� the� full� SPARC� V8�<br />
standard,� including� all� multiply� and� divide� instructions.� It� is�<br />
based� on� a� 5�stage� instruction� pipeline,� and� separate�<br />
instruction� and� data� cache� interfaces.� The� number� of�register�<br />
windows� is� configurable� within� the� limit� of� the� SPARC�<br />
standard�(2���32).�We�have�decided�for�an�inferred�register�file�<br />
(made�of�flip�flops)�of�8�register�windows.�<br />
�<br />
��� �����������������<br />
Separate� instruction� and� data� caches� are� provided,� each�<br />
configurable� to� 1� �� 64� KB,� with� 16�32� bytes� per� line.� Sub�<br />
blocking� is� implemented� with� one� valid� bit� per� 32�bit� word.�<br />
The� instruction� cache� uses� streaming� during� line�refill� to�<br />
minimize� refill� latency.� The� data� cache� uses� write�through�<br />
policy�and�implements�a�double�word�write�buffer.�Both�cache�<br />
types� can� be� configured� as� a� direct�mapped� or� as� a� multi�set�<br />
cache�with�associativity�of�2���4�implementing�either�the�least�<br />
recently�used� or� the� random� replacement� policy� (a� 2�way�<br />
associative� cache� implements� the� least�recently�replaced�<br />
algorithm).��<br />
We�have�implemented�a�configuration�consisting�of�an�8�<br />
KB� instruction� cache� and� an� 8� KB� data� cache� with� 16� bytes�<br />
per�line.�Each�of�the�caches�consists�of�a�tag�array�and�a�data�<br />
array.�As�associativity�is�one,�the�tag�array�is�23�bit�wide�and�<br />
the�data�array�is�32�bit�wide�in�both�caches.�<br />
Two� embedded� SRAM� blocks� with� size� of� 8� KB� and� 2�<br />
KB�are�used�for�implementation�of�the�tag�and�data�arrays.�The�<br />
tag�arrays�have�been�implemented�of�a�block�of�2�KB�(the�size�<br />
51<br />
is�512�x�32).�Also,�the�data�arrays�have�been�implemented�of�a�<br />
block�of�8�KB�(the�size�is�2048�x�32).�<br />
�<br />
��� ������������������<br />
The�external�memory�bus�is�controlled�by�a�programmable�<br />
memory�controller.�The�controller�acts�as�a�slave�on�the�AHB.�<br />
The�function�of�the�memory�controller�is�programmed�through�<br />
memory�configuration�registers�through�the�APB.�The�memory�<br />
bus�provides�a�direct�interface�to�PROM,�memory�mapped�I/O�<br />
devices� and� asynchronous� static� RAM� (SRAM).� Chip�select�<br />
decoding�is�done�for�two�PROM�banks,�one�I/O�bank�and�five�<br />
SRAM�banks.�Therefore,�there�are�eight�chip�select�signals�in�<br />
the�memory�controller.�<br />
�<br />
��� �����������������������������<br />
LEON�2� processor� system� includes� hardware� debug�<br />
support� to� aid� software� debugging� on� target� hardware.� The�<br />
support�is�provided�through�two�modules:�a�debug�support�unit�<br />
(DSU)�and�a�debug�communication�link�(DCL).�The�DSU�can�<br />
put�the�processor�in�debug�mode,�allowing�read/write�access�to�<br />
all� processor� registers� and� cache� memories.� The� DSU� also�<br />
contains� a� trace� buffer� which� stores� executed� instructions� or�<br />
data�transfers�on�the�AMBA�AHB�bus.�For�simplicity�and�area�<br />
saving,� we� have� not� included� this� buffer� in� the� implemented�<br />
configuration.� The� debug� communications� link� implements� a�<br />
simple� read/write� protocol� and� uses� standard� asynchronous�<br />
UART�communications.�<br />
The� debug� support� unit� is� used� to� control� the� processor�<br />
debug�mode.�The�DSU�is�attached�to�the�AHB�bus�as�a�slave,�<br />
occupying�a�2�MB�address�space.�Through�this�address�space,�<br />
any�AHB�master�can�access�the�processor�registers.�The�DSU�<br />
control� registers� can� be� accessed� at� any� time,� while� the�<br />
processor�registers�and�caches�can�only�be�accessed�when�the�<br />
processor� has� entered� debug� mode.� In� debug� mode,� the�<br />
processor� pipeline� is� held� and� the� processor� is� controlled� by�<br />
the�DSU.�<br />
The� debug� communication� link� consists� of� a� dedicated�<br />
UART� connected� to� the� AHB� bus� as� a� master.� A� simple�<br />
communication� protocol� is� supported� to� transmit� access�<br />
parameters� and� data.� A� link� command� consists� of� a� control�<br />
byte,� followed� by� a� 32�bit� address� and� optional� write� data.�<br />
Through�the�communication�link,�a�read�or�write�transfer�can�<br />
be�generated�to�any�address�on�the�AHB�bus.�<br />
�<br />
��� �������������������<br />
Two�on�chip�buses�are�provided:�AMBA�AHB�and�APB.�<br />
The� APB�is�used�to� access�peripherals�and�on�chip�registers,�<br />
while�the�AHB�is�used�for�high�speed�data�transfers.�The�full�<br />
AHB/APB�standard�is�implemented.��<br />
The� processor� is� connected� to� the� AHB� through� the�<br />
instruction� and� data� cache� controllers.� Access� conflicts�<br />
between� the� two� cache� controllers� are� resolved� locally.� The�<br />
processor� will� perform� burst� transfers� to� fetch� instruction�<br />
cache� lines� or� reading/writing� data� as� results� of� double�<br />
load/store� instructions.� Byte,� half�word� and� word� load/store�<br />
instructions� will� perform� single� (non�sequential)� accesses.�<br />
A n n u A l R e p o R t 2 0 0 6<br />
91
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Locked� transfers� are� only� performed� on� LDST� and� SWAP�<br />
instructions.� Double� load/store� transfers� are� however� also�<br />
guaranteed�to�be�atomic�since� the�arbiter�will�not�re�arbitrate�<br />
the�bus�during�burst�transfers.�<br />
AHB� is� designed� for� high�performance,� high�clock�<br />
frequency� system� modules.� It� acts� as� a� high�performance�<br />
system� backbone� bus.� This� bus� supports� the� efficient�<br />
connection� of� processors,� on�chip� memories� and� off�chip�<br />
external� memory� interfaces� with� low�power� peripheral�<br />
functions.� LEON�2� uses� the� AMBA�2.0� AHB� to� connect� the�<br />
processor�cache�controllers�to�the�memory�controller�and�other�<br />
high�speed� units.� In� our� configuration,� two� masters� are�<br />
attached�onto�the�bus:�the�processor�and�the�UART�of�debug�<br />
communication� link,� and� three� slaves� are� provided:� the�<br />
memory�controller,�the�debug�support�unit�and�the�AHB/APB�<br />
bridge.�<br />
AHB/APB�bridge�acts�as�the�only�master�on�the�APB.�All�<br />
communication�between�masters�on�the�AHB�and�slaves�on�the�<br />
APB� pass� through� this� bridge.� The� APB� is� optimized� for�<br />
minimal�power�consumption�and�reduced�interface�complexity�<br />
to�support�peripheral�functions.�It�is�configured�to�connect�five�<br />
slaves:� interrupt� controller,� timer,� two� UARTs,� and� parallel�<br />
I/O�port.�<br />
�<br />
��� ���������������������<br />
The�interrupt�controller�is�used�to�prioritize�and�propagate�<br />
interrupt� requests� from� internal� or� external� devices� to� the�<br />
integer�unit.�In�total�15�interrupts�are�handled,�divided�on�two�<br />
priority�levels.�<br />
�<br />
��� �����������<br />
The� timer� unit� implements� two� 24�bit� timers,� one� 24�bit�<br />
watchdog�and�one�10�bit�shared�prescaler.�We�do�not�use�the�<br />
watchdog.�<br />
�<br />
��� ������<br />
Two�identical�UARTs�are�used�for�serial�communications.�<br />
The�UARTs�support�data�frames�with�8�data�bits,�one�optional�<br />
parity� bit� and� one� stop� bit.� To� generate� the� bit�rate,� each�<br />
UART� has� a� programmable� 12�bits� clock� divider.� Hardware�<br />
flow�control� is� supported� through� the� RTSN/CTSN� hand�<br />
shake�signals.�<br />
�<br />
��� ������������������<br />
A� partially� bit�wise�programmable� 32�bit� I/O� port� is�<br />
provided�on�the�chip.�The�port�is�split�in�two�parts���the�lower�<br />
16�bits�are�accessible�via�the�PIO[15:0]�signal�while�the�upper�<br />
16�bits�uses�DATA[15:0]�and�can�only�be�used�when�all�areas�<br />
(ROM,�RAM�and�I/O)�of�the�memory�bus�are�in�8��or�16�bit�<br />
mode.�We�have�used�the�lower�16�bits�of�the�I/O�port�that�can�<br />
be�individually�programmed�as�an�output�or�input.�<br />
�<br />
��� �����������������������<br />
Since� LEON�2� processor� system� is� synthesized� from� an�<br />
extensively� configurable� VHDL� model,� a� configuration�<br />
register� (read�only)� is� used� to� indicate� which� options� were�<br />
92 A n n u A l R e p o R t 2 0 0 6<br />
52<br />
enabled� during� synthesis.� For� each� option� present,� the�<br />
corresponding�register�bit�is�hardwired�to�‘1’.�<br />
�<br />
��� ��������������������<br />
The� processor� can� be� powered�down� by� writing� an�<br />
arbitrary�value�to�the�power�down�register.�Power�down�mode�<br />
will�be�entered�on�the�next�load�or�store�instruction.�To�enter�<br />
the�power�down�mode�immediately,�a�store�to�the�power�down�<br />
register� should� be� performed� followed� by� a� ‘dummy’� load.�<br />
During�power�down�mode,�the�integer�unit�will�effectively�be�<br />
halted.� The� power�down� mode� will� be� terminated� (and� the�<br />
integer� unit� re�enabled)� when� an� unmasked� interrupt� with�<br />
higher�level�than�the�current�processor�interrupt�level�becomes�<br />
pending.� All� other� functions� and� peripherals� operate� as�<br />
nominal�during�the�power�down�mode.�<br />
�<br />
III.� SYSTEM�IMPLEMENTATION�AND�VERIFICATION�<br />
�<br />
For�system�implementation�and�verification,�we�have�used�<br />
the� original� simulation� and� synthesis� scripts� [9]� having�<br />
provided� necessary� modifications.� First,� modifications� have�<br />
been� done� to� incorporate� custom� SRAM� Verilog� simulation�<br />
models�into�the�original�VHDL�processor�model.�<br />
�<br />
��� ����������<br />
The� system� is� fully� synthesizable� with� most� synthesis�<br />
tools.�After�the�configured�processor�system�including�SRAM�<br />
models� had� been� verified,� we� have� modified� the� synthesis�<br />
scripts� to� map� the� design� into� the� target� library.� The� design�<br />
with� directly� instantiated� SRAM� blocks� and� pads� has� been�<br />
synthesized�for�a�target�frequency�of�80�MHz�using�Synopsys�<br />
Design�Compiler� [12].�An�SDF�(Standard�Delay�Format)�file�<br />
of�the�synthesized�gate�level�netlist�has�been�generated�too.�<br />
�<br />
��� �������������<br />
A� generic� testbench� is� provided� for� generation� of� a� few�<br />
testbench�configurations:�FUNC�testbench�performing�a�quick�<br />
check� of� most� on�chip� functions,� MEM� testbench� testing� all�<br />
on�chip�memory�with�patterns�of�0x55�and�0xAA,�and�FULL�<br />
testbench� combining�memory�and�functional� tests,�suitable�to�<br />
generate�test�vectors�for�manufacturing�testing�[9].�Numerous�<br />
simulations�using�these�testbenches�have�been�carried�out�after�<br />
synthesis�to�prove�the�correct�functionality�of�the�design�gate�<br />
level� netlist.� All� the� simulations� without� and� with� the�<br />
corresponding� SDF� file� have� been� done� using� ModelSim�<br />
Simulator� [13].� The� same� simulations� (using� the� original�<br />
testbenches� and� self�made� assembler� program)� are� used� for�<br />
verification�of�the�netlist�of�the�generated�layout.�<br />
�<br />
��� �������<br />
After� functionality� of� the� synthesized� netlist� had� been�<br />
verified,� we� have� created� a� floorplan� using� Cadence� First�<br />
Encounter� [14].� In� floorplanning� phase,� the� memory� blocks�<br />
have� been� placed� as� hard� macros.� Design� layout� has� been�<br />
generated� using� a� standard� sequence� of�the�back�end� process�<br />
steps:� power� planning,� placement,� clock� tree� generation,�
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
routing�and�verification�of�geometry.�The�processor�system�is�<br />
fabricated� in� the� <strong>IHP</strong>’s� 0.25�m� CMOS� technology.� The� chip�<br />
photo�is�shown�in�Figure�3.�Geometrical�and�electrical�features�<br />
of�the�chip�are�summarized�in�TABLE�1.�The�data�show�high�<br />
performance� and� low� power� of� the� implemented� system�on�<br />
chip.�<br />
�<br />
TABLE�1�<br />
CHIP�FEATURES�<br />
Area� 27.2�mm 2�<br />
Number�of�transistors� ~1.500.000�<br />
Number�of�ports� 128�signal�+�16�power�<br />
Maximum�frequency� 85�MHz�<br />
Power�consumption� 530mW@2.5V,�60�MHz�<br />
�<br />
�<br />
�<br />
�<br />
Figure�3:�Chip�photo�<br />
�<br />
��� ������������<br />
The� design�is� highly�testable� as�in�addition�to�functional�<br />
testing�of�the�complete�system�on�chip,�the�SRAM�blocks�have�<br />
been�tested�by�integrated�BIST�and�the�rest�of�the�logic�by�a�<br />
chain�of�scanable�flip�flops�(a�scan�chain).�<br />
Each� SRAM� block� includes� the� BIST� logic,� and�<br />
subsequently,� four� additional� ports:� an� enable� signal,� a� reset�<br />
signal,�a�‘fail’�signal�(which�is�asserted�in�case�of�a�fault)�and�a�<br />
‘done’� signal� (which� is� asserted�when�the�test�is� finished).�A�<br />
Verilog� BIST� testbench� has� been� prepared� for� simulation�<br />
purposes.�<br />
�<br />
�<br />
�<br />
�<br />
�<br />
�<br />
�<br />
�<br />
�<br />
�<br />
53<br />
For� the� inserted� scan�chain� (made� of� more� than� 11000�<br />
scanable� flip�flops),� we� have� generated� more� than� 1300�<br />
manufacturing�test�vectors�by�Synopsys�TetraMAX�Automatic�<br />
Test�Pattern�Generator�in�form�of�a�WGL�file.�A�Verilog�DPV�<br />
testbench� has� been� prepared� for� serial� simulation� of� all� scan�<br />
data�too.��<br />
All�the�tests�(FULL�test,�BIST�and�scan�test)�are�executed�<br />
on�the�Agilent's�chip�tester�93000.�<br />
�<br />
IV.� CONCLUSION�<br />
�<br />
This� paper� presents� an� experience� in� implementation� of�<br />
LEON�2� processor� system� configured� to� play� the� role� of� a�<br />
general� purpose� processor� for� the� <strong>IHP</strong>’s�wireless�engine.�We�<br />
have� demonstrated� the� performance� and� features� of� this�<br />
processor� system� (fabricated� in� the� <strong>IHP</strong>’s� 0.25�m� CMOS�<br />
technology)� that� meet� requirements� imposed� by� target�<br />
application.� The� implemented� processor� system� has� been�<br />
verified�and�become�a�reusable�module�of�our�modular�library.�<br />
�<br />
REFERENCES�<br />
�<br />
1.� <strong>IHP</strong>�–�Innovations�for�High�Performance�microelectronics,�<br />
http://www.ihp�ffo.de/wireless/WLEindx.htm�<br />
2.� http://grouper.ieee.org/groups/802/11�<br />
3.� http://www.hiperlan2.com�<br />
4.� E.�Grass,�K.�Tittelbach�Helmrich,�U.�Jagdhold,�A.�Troya,�G.�Lippert,�O.�<br />
Krüger,� J.� Lehmann,� K.� Maharatna,� K.F.� Dombrowski,� N.� Fiebig,� R.�<br />
Kraemer,� and� P.� Mähönen,� “On� the� single�chip� implementation� of� a�<br />
Hiperlan/2� and� IEEE� 802.11a� capable� modem,”� ����� ���������<br />
�����������������������,�vol.�8,�pp.�48�57,�2001.�<br />
5.� M.�Methfessel,�K.F.�Dombrowski,�P.�Langendörfer,�H.�Frankenfeldt,�I.�<br />
Babanskaja,�I.�Matthaei,�and�R.�Kraemer,�“Vertical�optimization�of�data�<br />
transmission� for� mobile� wireless� terminals,”� ����� ���������<br />
��������������,�vol.�9,�pp.�36�43,�2002.�<br />
6.� P.� Langendörfer,� “Integration� moderner� Hand�<br />
Implementierungstechniken� in� Codegeneratoren,”� ����������� ���<br />
��������,�2001.�<br />
7.� Z.�Stamenković,�G.�Panić,�U.�Jagdhold,�H.�Frankenfeldt,�K.�Tittelbach�<br />
Helmrich,�G.�Schoof,�and�R.�Kraemer,�“Modular�Processor:�A�Flexible�<br />
Library� of� ASIC� Modules,”� ������ ���� ������� ��������������<br />
����������������������������������������������,�pp.�428�432,�2004.�<br />
8.� LEON�2�Processor�User’s�Manual,�http://www.gaisler.com/�<br />
9.� LEON�2�VHDL�Model,�http://www.gaisler.com/products/leon2�<br />
10.� AMBA�On�Chip�Bus�Standard,�ARM�Inc.,�<br />
http://www.arm.com/armtech/AMBA�<br />
11.� <strong>IHP</strong>�–�Innovations�for�High�Performance�microelectronics,�<br />
http://www.ihp�ffo.de/ihpoffer/OFFindx.htm�<br />
12.� Synopsys�Inc.,�http://www.synopsys.com�<br />
13.� Model�Technology,�http://www.model.com�<br />
14.� Cadence�Design�Systems,�http://www.cadence.com�<br />
A n n u A l R e p o R t 2 0 0 6<br />
93
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
An Improved Highly-Linear Low-Power Down-Conversion<br />
Micromixer for 77 GHz Automotive Radar in SiGe Technology<br />
94 A n n u A l R e p o R t 2 0 0 6<br />
Li Wang 1,2<br />
, Rolf Kraemer 1,2<br />
, and Johannes Borngraeber 1<br />
1<br />
<strong>IHP</strong> <strong>Microelectronics</strong>, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany,<br />
2<br />
Technical University of Brandenburg, 03013 Cottbus, Germany<br />
Abstract — This paper proposes a method to improve the nonlinearity<br />
of the differential RF signals, the noise figure and<br />
conversion gain in the existing micromixer through inserting a<br />
transistor that is connected in diode form in the mirrored RF<br />
branch. These improvements are demonstrated by three<br />
micromixers designed at different frequency bands. A 77 GHz<br />
micromixer in 0.25 µm SiGe:C BiCMOS technology using the<br />
proposed method is fabricated and measured. Additionally,<br />
current injection technique is applied in the circuit to increase<br />
gain and reduce power consumption. 13.4 dB gain, 18.4 dB NF<br />
and 1.4 dBm OP1dB are achieved with 176 mW power<br />
consumption at 4.5 V. To the authors’ knowledge, this is the first<br />
reported 77 GHz micromixer.<br />
Index Terms — Automotive radar, BiCMOS, Downconversion,<br />
Gilbert mixers, micromixer, 77 GHz, SiGe.<br />
I. INTRODUCTION<br />
Up to now, most of the reported millimeter-wave radar<br />
front-end were realized with Schottky diodes and<br />
implemented in GaAs technologies for their excellent device<br />
performance. However, the application of GaAs circuits in the<br />
fields such as 77 GHz automotive radar is limited by the high<br />
cost. With the advent of 200 GHz f T SiGe:C technology, it is<br />
attractive to realize the circuits with lower cost and excellent<br />
performance. The so far reported two active mixers in SiGe<br />
technologies in mm-wave range such as V-band (50 to 75<br />
GHz) and W-band (75 to 110 GHz) are a single-balanced (SB)<br />
mixer at 60 GHz [1] and a double-balanced Gilbert (DBG)<br />
mixer at 77 GHz [2]. However, single-ended double- balanced<br />
(SEDB) micromixer in the mm-wave range has not yet been<br />
reported.<br />
In this paper, after a detailed analysis of the existing mixer<br />
structures, we propose an improved micromixer structure,<br />
which improves the RF asymmetry, conversion gain (CG) and<br />
noise figure (NF) compared with other existing micromixer<br />
topologies. The improvement is demonstrated by three designs<br />
using this structure. A 77 GHz down-conversion micromixer<br />
circuit using the proposed structure is fabricated in <strong>IHP</strong>’s lowcost<br />
0.25 µm SiGe:C BiCMOS technology. To the authors’<br />
knowledge, this is the first reported SiGe 77 GHz micromixer.<br />
Compared with the previously published SiGe 77 GHz active<br />
down-conversion mixer [2], measured results of the fabricated<br />
chip demonstrate a 60% better linearity with 41% less power<br />
consumption.<br />
0-7803-9542-5/06/$20.00 ©<strong>2006</strong> IEEE<br />
proc. Internat. Microwave 1834 Symposium (<strong>2006</strong>)<br />
II. ANALYSIS OF CURRENT MIXER STRUCTURES<br />
The current structures of mixer are: SB mixer, DBG mixer,<br />
and SEDB micromixer. SB mixer has the advantages such as<br />
low power consumption, lower requirement for LO power,<br />
good NF, no need of RF balun. However it is limited by the<br />
following: low CG, limited linearity due to the V-I converter,<br />
narrow dynamic range, more IM products, and large LO<br />
leakage. In comparison with SB mixer, DBG mixer has the<br />
double-balanced structure which overcomes the disadvantages<br />
of SB mixer. However it requires higher LO power and either<br />
a differential low noise amplifier (LNA) to provide differential<br />
RF signals or a single-ended LNA with a single-ended to<br />
differential converter. The differential LNA consumes double<br />
power and chip area of the single-ended LNA. Additionally,<br />
the single-ended LNA requests an active single-ended-todifferential<br />
converter whose phase and amplitude unbalance<br />
greatly worsen the linearity of the mixer at the mm-wave<br />
range. Although RF LC balun also converts single-ended<br />
signal to differential signals, it occupies a larger chip area and<br />
can’t provide well-balanced differential signals. SEDB<br />
micromixer has an inherent single-ended port for the RF<br />
signal without using the RF balun, and provides balanced<br />
signal paths for the LO and RF, thus overcomes the<br />
disadvantages of the SB mixer. Furthermore, the advantages<br />
of DBG are preserved in SEDB micromixer. Based on the<br />
above consideration, we choose SEDB structure in our design.<br />
So far, the SEDB mixer were reported only at very low<br />
frequencies. In the next section, we propose a method to<br />
reduce the residual non-linearity caused by asymmetry in RF<br />
signal path and to improve the gain and noise figure compared<br />
to the existing micromixers. The improvement is verified in<br />
W-band.<br />
III. IMPROVED MICROMIXER STRUCTURE<br />
The circuit of mixer consists of a mixer core, an LO buffer,<br />
and an IF buffer. Three existing micromixer structures<br />
reported in [3], [5], and [6] are shown in Fig. 1 (a), (b), and<br />
(c). The improved structure is depicted in Fig. 2. What<br />
differentiates our proposed method from the existing methods<br />
is the mirrored RF upper branch which is marked in a dashed<br />
circle. In other reported micromixer structures shown in Fig.<br />
1, Q6 is either connected in different ways or not used. We<br />
propose to connect a transistor Q6 in a diode form as shown in
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
RF<br />
Q5<br />
Q7<br />
R1<br />
R2<br />
R3<br />
R4<br />
Q6<br />
Q10<br />
Q8<br />
Q11<br />
R11<br />
Vbias<br />
Fig. 2. Circuit of 77 GHz micromixer core with single-ended RF and<br />
differential LO and IF<br />
Delta Gain (dB)<br />
Quad<br />
transistors<br />
Fig. 2. The most important benefit of this way of connecting<br />
Q6 is the better balancing of the amplitude and phase of the<br />
differential RF signals, this is realized by providing a more<br />
symmetric structure for RF signals at node A and B. Then this<br />
results in the cancellation of the individual non-linearity of I1<br />
and I3 and improves the performance of micromixer.<br />
R6<br />
R5<br />
C3<br />
RF<br />
Q5<br />
Q7<br />
Quad<br />
transistors<br />
R1<br />
R2<br />
R3<br />
R4<br />
2<br />
Q8<br />
Q10<br />
Q11<br />
R11<br />
Vbias<br />
(a)<br />
(b)<br />
Fig. 1. Current existing structures of micromixer: (a) Structure in [3], (b) Structure in [5], (c) Structure in [6]<br />
LO+<br />
LO-<br />
RF<br />
4.0<br />
3.0<br />
2.0<br />
1.0<br />
0.0<br />
-1.0<br />
-2.0<br />
-3.0<br />
Vcc<br />
R7 R8 C1 C2 R9 R10<br />
I1<br />
Q1 Q2 Q3 Q4<br />
A<br />
B<br />
I2<br />
Q5<br />
Q7<br />
R1<br />
R2<br />
R3<br />
R4<br />
Q6<br />
I3<br />
Q8<br />
Q10<br />
Q11<br />
a b c<br />
Structures of mixer<br />
R11<br />
R6<br />
R5<br />
C3<br />
0.5<br />
0.0<br />
-0.5<br />
-1.0<br />
-1.5<br />
-2.0<br />
-2.5<br />
-3.0<br />
dG_a@70 GHz dG_b@77 GHz<br />
dG_c@84 GHz dNF_a@70 GHz<br />
dNF_b@77 GHz dNF_c@84 GHz<br />
Fig. 3. Gain and NF comparison among the proposed mixer<br />
structure and existing structures at different frequency bands<br />
IF+<br />
IF-<br />
Vbias<br />
Delta NF (dB)<br />
1835<br />
R6<br />
R5<br />
C3<br />
RF<br />
Q5<br />
Q7<br />
Quad<br />
transistors<br />
R1<br />
R2<br />
R3<br />
To verify the improvement, three circuits were designed at<br />
70 GHz, 77 GHz and 84 GHz, respectively. The gain and NF<br />
between the proposed mixer structure and the existing<br />
mircomixers are compared and illustrated in Fig. 3. We define<br />
dG_x = G_new − G_x, and dNF_x = NF_new − NF_x, where<br />
G_new (or NF_new) and G_x (or NF_x) are conversion gain<br />
(or NF) of the mixer with the new structure and the structure<br />
(x) in Fig. 1 respectively, x denotes a, b, and c. Our structure<br />
reduces the NF compared to the other three structures and the<br />
reduction is more noticeable at higher frequencies. The reason<br />
is that the individual non-linearities of the two output currents<br />
I1 and I3 are cancelled, thus the noise interference part is<br />
removed. The improvement for gain is also positive compared<br />
to structure (a) and (b) with the same reason. Compared to<br />
structure (c), the gain is reduced by 0.09 dB, 0.51 dB, and 0.15<br />
dB for 70 GHz, 77 GHz, and 84 GHz respectively. This is<br />
because that in (c), the incidental inequality of VCE of Q8 helps<br />
to recover some of the current gain in the mirror lost due to its<br />
finite ac beta. Since the structure depicted in Fig. 1. (c) uses<br />
no components in the mirrored RF upper branch, Q8 suffers<br />
avalanche risk. This is particularly important for SiGe<br />
technologies which have a low BVCEO. Since the BVCEO is 1.9<br />
V in the 200 GHz fT SiGe technology, VCE of Q8 is on the<br />
border of BVCEO. Therefore, structure (c) is not suitable for<br />
low BVCEO technologies. In sum, our proposed structure<br />
improves the linearity of the two differential RF signals and<br />
thus increases the gain, reduces the NF without increasing the<br />
complexity of the circuit and avoids the avalanche.<br />
III. CIRCUIT DESIGN<br />
R11<br />
Vbias<br />
The proposed micromixer structure is used in the design of<br />
a 77 GHz mixer. Additionally, current injection [4] is realized<br />
by using R 7 and R 10 to increase the gain without increasing the<br />
tail current; thus, the gain can be improved by using larger<br />
collector load with lower supply voltage. While the internal<br />
circuit has a differential architecture, the LO and RF ports are<br />
single-ended. The input matching for RF port is greatly<br />
facilitated by feeding the single-ended RF signal to the small<br />
resistor R1 which is connected to the emitter of Q5. This<br />
further linearizes the mixer and matches the RF port to 50<br />
R4<br />
(c)<br />
Q8<br />
Q10<br />
Q11<br />
R6<br />
R5<br />
C3<br />
A n n u A l R e p o R t 2 0 0 6<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Ohm. Additionally, the matching still can be finely optimized<br />
by the control voltage Vbias. The internal differential RF<br />
signals are achieved by the current mirror Q 7 and Q 8 without<br />
using RF balun and provides differential RF signals with<br />
improved linearity. At the collector node, RF and LO signals<br />
are filtered out by a Metal-Insulator-Metal (MIM) capacitor to<br />
feed only the low frequency IF signals to the IF buffer.<br />
50 Ohm<br />
LO<br />
Vcc<br />
Fig. 4. Circuit diagram of LO buffer<br />
The differential LO signals are provided by the LO buffer as<br />
shown in Fig. 4. A 50 Ohm resistor and a transmission line are<br />
used at the input to provide a good match to the LO input<br />
probe. Additionally, the LO buffer provides constant gain for<br />
the LO differential signals to provide sufficient power to drive<br />
the mixer. AC coupling is used to remove the DC offset of the<br />
differential LO signals. Furthermore, emitter followers behave<br />
as low impedance interfaces to the mixer core. The circuit of<br />
an IF buffer (not shown) is a one-stage differential amplifier<br />
with emitter degeneration, and it is only used to provide a<br />
matching circuit for the 50 Ohm measurement port without<br />
influencing the linearity and gain of the mixer.<br />
The circuits were fabricated in a SiGe:C HBT self-aligned<br />
single-polysilicon technology with 0.25 µm minimum<br />
lithographic emitter width and four Al metal layers described<br />
in [7]. Collector emitter breakdown voltage BV CEO is 1.9 V.<br />
The f T and f max are up to 200 GHz. The highly lossy substrate’s<br />
resistance is 50 Ωcm.<br />
IV. MEASUREMENT RESULTS AND DISCUSSIONS<br />
The chip photograph is shown in Fig. 5. The chip area is 0.5<br />
mm × 0.55 mm including pads, and 0.3 mm × 0.2 mm without<br />
pads. RF and LO are fed from the opposite sides to improve<br />
the isolation in layout. All the measurements were done on<br />
wafer with mm-wave source module HP 83558A and<br />
multiplier for W-band. The exact input power of LO and RF is<br />
measured by Agilent W8486A W-band power sensor and HP<br />
HP E4419B power meter. The noise figure (NF) was<br />
measured by using the W-band noise source and Aeroflex<br />
PN9000 Phase Noise Test System.<br />
The mixer operates at a supply voltage of 4.5 V with a total<br />
current consumption only 39 mA, and consumes 176 mW<br />
power with 49.5 mW for the mixer core. With 2 dBm LO<br />
96 A n n u A l R e p o R t 2 0 0 6<br />
LO+<br />
LO-<br />
1836<br />
3<br />
Gain (dB)<br />
Gnd Vcc Vb Gnd<br />
Gnd<br />
Gnd<br />
Mixer<br />
LO LO<br />
B uffer<br />
C ore<br />
IF B uffer<br />
R F<br />
Gnd<br />
Gnd<br />
G nd IF+ IF- Gnd<br />
Fig. 5. Chip photo of mixer with chip area of 0.5 × 0.55 mm 2<br />
IF Output Power(dBm<br />
20<br />
15<br />
10<br />
-10<br />
-15<br />
5<br />
0<br />
-5<br />
5<br />
0<br />
-5<br />
-10<br />
-15<br />
-20<br />
-25<br />
-30<br />
-35<br />
-40<br />
Freq_LO= 77 GHz<br />
Power_LO=1 dBm.<br />
Freq_RF=77.1 GHz<br />
-55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0<br />
RF Input Power (dBm)<br />
Fig. 6. Measured IF power versus RF input power<br />
Freq_IF=100 MHz<br />
Power_LO=1 dBm.<br />
versus LO frequency<br />
versus RF frequency<br />
-20<br />
70 75 80 85 90<br />
LO / RF Input Frequency (GHz)<br />
Fig. 7. Measured conversion gain versus RF and LO input<br />
frequency<br />
power, a maximum gain of 13.4 dB at 77 GHz is measured.<br />
Fig. 6 depicts the output power for an IF frequency of<br />
100MHz versus the RF input power. The LO frequency and<br />
power is 77 GHz and 1 dBm respectively. The mixer shows a<br />
wide dynamic range with input 1 dB compression point of -12<br />
dBm. In Fig. 7, the measured CG versus LO and RF input<br />
frequency is shown for 100 MHz IF frequency and 1dBm LO<br />
power. The measured CG versus RF frequency is larger than<br />
10 dB at the center frequency of 77 and 84 GHz and peaks<br />
also for LO frequency at 77 GHz. This demonstrates that good
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Gain (dB)<br />
15<br />
12<br />
9<br />
6<br />
3<br />
Freq_LO= 77 GHz<br />
Freq_RF=77.1 GHz<br />
Power_RF=-27.7dBm<br />
0<br />
-15 -10 -5 0 5<br />
LO Power ( dBm )<br />
Fig. 8. Measured conversion gain versus LO input power<br />
TABLE I<br />
COMPARISON TO REPORTED 77 GHZ ACTIVE SIGE MIXER<br />
Ref. Technology Gain<br />
[2] 0.18µm<br />
This<br />
work<br />
200GHz f T<br />
0.25µm<br />
200GHz f T<br />
IF<br />
P 1dB<br />
(dB) (MHz) (dBm) (dB)<br />
matching is achieved at both ports. Fig. 8 shows the linearity<br />
of CG versus LO power. CG saturates at 2 dBm LO power.<br />
For 77 GHz LO, CG is 12.6 dB and 13.4 dB gain for LO<br />
power of 1 dBm and 2 dBm respectively. The signals emitting<br />
to the substrate at such band and the highly lossy substrate<br />
result in loss and medium isolation. The measured port<br />
isolation of LO-RF and LO-IF is larger than 34 dB and 28 dB<br />
respectively. 18.4 dB SSB NF is obtained by measuring the<br />
output noise power density utilizing the Gain Method. The<br />
measured output noise power density of the mixer and the<br />
residual noise power density are –160 dBV 2<br />
/Hz and –170<br />
dBV 2 /Hz respectively. The data was obtained by repeating<br />
each step several times with the similar curves.<br />
So far, we have not found reports with measured IP3 result<br />
near 77 GHz range or beyond. The practical problems prohibit<br />
us from building a measurement setup. The mechanical<br />
difficulties encountered during installing the required<br />
equipment and apparatus: two 77 GHz RF sources, a W-band<br />
coupler, a W- band LO source module, and four probes.<br />
Another source (Agilent) using tricky mixing algorithm to<br />
establish two-tone signals works for low frequencies only.<br />
Since all the measured data, including 1 dB compression<br />
point, CG, port matching agree with the simulation data very<br />
well, we can safely use the simulated –2.5 dBm IP3 as<br />
practical metric for mixer. Furthermore, the rule of thumb<br />
states that the real IP3 is around 10 dB larger than the P1dB. That is, the real IP3 can be estimated as -12 dBm + 10 dB = -2<br />
NF<br />
Voltage Power Isolation FOM<br />
(V)<br />
(mW)<br />
(dB)<br />
22 500 -30 >14 -5 300 - -63.77<br />
13.4 100 -12 18.4 4.5 176 >34/<br />
>28<br />
-60.86<br />
1837<br />
4<br />
dBm. This IP3 estimate also well agrees with the simulated<br />
IP3 of -2.5 dBm with only 0.5 dB estimation error. Therefore<br />
we could say that -2.5 dBm IP3 is trustable. Table I shows a<br />
comparison between the so far reported 77 GHz active SiGe<br />
mixer. We choose the new definition of figure-of-merit<br />
(FOM) to have a comprehensive comparison of mixer<br />
performance and show the FOM MIX as an indication.<br />
FOM MIX=(CG-NF)+(MIX LIN-NF)-MIX pwr, where the definitions<br />
for each term can be found in [8]. 60% better linearity and<br />
higher FOM MIX are achieved with 41% less power<br />
consumption.<br />
V. CONCLUSION<br />
A 77 GHz SiGe micromixer with a proposed topology is<br />
presented in 200 GHz SiGe:C technology. 13.4 dB maximum<br />
gain and 18.4 dB NF are achieved with 2 dBm LO power. 1.4<br />
dBm OP 1dB demonstrates the high linearity of the mixer with<br />
176 mW power consumption at 4.5 V. Compared to other<br />
existing structures of micromixers, we demonstrated that our<br />
structure improves the gain and NF without increasing the<br />
circuit complexity. To the authors’ knowledge, this is the first<br />
reported micromixer at 77 GHz.<br />
ACKNOWLEDGEMENT<br />
The authors acknowledge the equipment support from Prof.<br />
A. Thiede University of Paderborn, and Ferdinand-Braun-<br />
Institut (FBI) in Berlin.<br />
REFERENCES<br />
[1] S. K. Reynolds, “A 60-GHz superheterodyne downconversion<br />
mixer in silicon-germanium bipolar technology,” IEEE Journal<br />
Solid-State Circuits, VOL. 39, NO. 11, Nov. 2004, pp. 2065-<br />
2068.<br />
[2] W. Perndl, H. Knapp, M. Wurzer, K. Aufinger, et al., “A lownoise<br />
and high gain double-balanced mixer for 77 GHz<br />
automotive radar front-ends in SiGe:C HBT technology,” IEEE<br />
Radio Frequency Circuits Symposium, 2004, pp. 47-50.<br />
[3] B. Gilbert, “The MICROMIXER: A highly linear variant of the<br />
Gilbert mixer using a bisymmetric class-AB input stage,” IEEE<br />
Journal Solid-State Circuits, VOL. 32, NO. 9, Sep. 1997, pp.<br />
1412-1423.<br />
[4] B. Razavi, “RF microelectronics,” (Prentice Hall. New York.<br />
1998), Chap. 6<br />
[5] C. Meng, T-Han. Wu, T-Hung. Wu, G-W. Huang, “A 5.2 GHz<br />
16 dB CMFB Gilbert downconversion mixer using 0.35 µm<br />
deep trench isolation SiGe BiMCOS technology,” IEEE MTT-S<br />
International Microwave Symposium, 2003, pp.975-978.<br />
[6] C. Y. Wang, S. S. Lu, C. C. Meng, and Y. S. Lin, “A SiGe<br />
micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications,”<br />
IEEE Microwave and Optical Technology Letters Vol. 41, No.<br />
5, Jun. 2004, pp. 343-346.<br />
[7] B. Heinemann, et al.: "Novel collector design for high-speed<br />
SiGe:C HBTs," IEEE IEDM Tech. Dig., 2002, pp. 775-778.<br />
[8] J. P. Comeau, J. D. Cressler, J. Lee, A.J. Joseph,: "An 8.4-12.0<br />
GHz down-conversion mixer implemented in SiGe HBT<br />
technology” IEEE Topical Meeting on Silicon Monolithic<br />
Integrated Circuits in RF systems, 2004, pp.13-16.<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
�������������������������������������������������������������������<br />
�����������������<br />
98 A n n u A l R e p o R t 2 0 0 6<br />
proc. european Microwave Integrated Circuits Conference, 198 (<strong>2006</strong>)<br />
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A n n u A l R e p o R t 2 0 0 6<br />
101
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process<br />
102 A n n u A l R e p o R t 2 0 0 6<br />
D. Knoll, B. Heinemann, K. E. Ehwald, A. Fox, H. Rücker, R. Barth, D. Bolze, T. Grabolla,<br />
U. Haak, J. Drews, B. Kuck, S. Marschmeyer, H. H. Richter, M. Chaimanee, O. Fursenko,<br />
P. Schley, B. Tillack, K. Köpke, Y. Yamamoto, H. E. Wulf, and D. Wolansky<br />
Abstract<br />
We demonstrate a low-cost, high-performance, high-voltage<br />
complementary SiGe:C BiCMOS process. This technology<br />
offers three npn SiGe:C devices with fT/ BVCEO values of<br />
40GHz/ 5V, 63GHz/ 3.5V, and 120GHz/ 2.1V together with a<br />
32GHz fT/ 35GHz fmax/ 4.4V pnp SiGe:C HBT by adding only<br />
three bipolar masks to the underlying RF-CMOS process. With<br />
two additional implant masks, a 150GHz, 2.2V npn HBT and<br />
either a 43GHz fT/ 65GHz fmax/ 4.2V pnp or a 38GHz fT/<br />
70GHz fmax, 5.8V pnp device can be fabricated additionally (in<br />
the npn case) or alternatively (pnp case) to the devices of the 3mask<br />
module.<br />
Introduction<br />
It has long been recognized that a Si bipolar or BiCMOS<br />
technology platform containing both npn and pnp devices with<br />
matched performance can offer compelling advantages in many<br />
types of analog circuits (1, 2). An ideal process for such<br />
applications could be a complementary BiCMOS (CBiCMOS)<br />
process which provides, on the bipolar side, both npn and pnp<br />
devices with best RF performance, combined with higher<br />
voltage transistors, but preferably at a process cost not too<br />
much above that of BiCMOS or even RF-CMOS. Recently,<br />
first SiGe CBiCMOS technologies have been reported (3-5),<br />
demonstrating a level of pnp RF performance not seen before<br />
(4, 5). For these technologies, however, performance has<br />
clearly the primacy, while cost is not in the main focus. Here,<br />
we demonstrate for the first time a strictly cost-optimized<br />
SiGe:C CBiCMOS process, which offers, with a minimum of<br />
bipolar mask and processing steps, ample npn and pnp<br />
performance for the majority of applications. The key measures<br />
to get a low-cost, complementary bipolar module are the<br />
adaptation of the process sequence applied in our 1-mask npnonly<br />
module (6) also for pnp fabrication, and the introduction of<br />
a second shallow trench (SSTR) which has a lower depth<br />
compared to the trench of the process core. The SSTR, which is<br />
filled and planarized together with the core trench, separates the<br />
active HBT regions from the collector contact regions and<br />
allows us to reach simultaneously low values of collector<br />
resistance (RC) and base-collector capacitance (CBC) with a<br />
1-4244-0439-8/06/$20.00 © <strong>2006</strong> IEEE<br />
IeDM technical Digest, 607 (<strong>2006</strong>)<br />
<strong>IHP</strong><br />
Im Technologiepark 25, 15236 Frankfurt (Oder), Germany<br />
simple, epi-free collector structure.<br />
Our primary results can be summarized as follows. 1) With a<br />
minimum of only three bipolar mask adders, the new<br />
CBiCMOS process offers 3 types of npn SiGe:C devices<br />
featuring 120GHz fT (at 2.1V BVCEO), 63GHz fT (3.5V BVCEO),<br />
and 40GHz fT (5V BVCEO), together with a 32GHz fT, 35GHz<br />
fmax, 4.2V pnp SiGe:C HBT. 2) With two additional implant<br />
masks, i.e. with only 5 bipolar masks in total, a 150GHz fT,<br />
2.2V npn HBT and either a 43GHz fT, 65GHz fmax, 4.2V pnp or<br />
a 38GHz fT, 70GHz fmax, 5.8V pnp device can be fabricated<br />
additionally (in the npn case) or alternatively (pnp case) to the<br />
devices of the 3-mask module.<br />
A. Process Integration<br />
CBiCMOS Process Flow<br />
Fig. 1 demonstrates the new SiGe:C CBiCMOS process. As<br />
baseline, a 0.25µm RF-CMOS platform is used which is very<br />
similar to that of <strong>IHP</strong>’s high-performance CBiCMOS process<br />
(4, 5). The baseline offers, with 20 lithographic steps, a triplewell<br />
CMOS core, several types of polysilicon resistors with<br />
sheet resistances ranging from 7Ω to 2kΩ, a MIM capacitor,<br />
and a 5-level Al-BEOL with 2µm and 3µm thick top layers. By<br />
adding the 3-mask or 5-mask complementary HBT modules,<br />
the total CBiCMOS mask count is 23 and 25, respectively.<br />
An essential goal for any bipolar integration in a CMOS<br />
baseline is the reuse of CMOS libraries in the BiCMOS<br />
process. An advantage of the applied HBT integration scheme<br />
in this respect is that the essential bipolar process steps are<br />
carried out already before gate structuring, as can be seen from<br />
Fig. 1. Moreover, the same final RTP step as used in the CMOS<br />
baseline is applied also for the CBiCMOS process. In result, the<br />
bipolar integration is fully modular, i.e. the core CMOS<br />
parameters remain unchanged, compared to the RF-CMOS<br />
baseline.<br />
B. NPN and PNP HBT Fabrication<br />
The complementary SiGe:C HBTs consist of implanted, epi-
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
RF-CMOS Baseline Bipolar Adders<br />
Mask “STR”<br />
Std. depth trench etch<br />
Liner / trench fill / CMP<br />
CMOS well implants<br />
Gate stack deposition<br />
Nitride protection layer<br />
Nitride wet etch<br />
Gate RIE<br />
S/D implants + RTA<br />
Salicide blocker<br />
CoSi formation<br />
5 level AlCu BEOL incl.<br />
MIM module<br />
Mask (A) “SSTR“<br />
Low depth trench etch<br />
Mask (D) “NPN COLL”<br />
NPN collector implant<br />
Mask (E) “PNP COLL”<br />
PNP collector implant<br />
Mask (B) “NEWIN”<br />
NPN module * )<br />
Mask (C) “PEWIN”<br />
PNP module * )<br />
* ) Module main steps<br />
• Nitride / Poly RIE<br />
• Oxide wet etch<br />
• Si / p + or n + SiGe:C / Si<br />
differential epi<br />
• Spacer formation<br />
• n + or p + emitter<br />
deposition<br />
• Poly CMP on Nitride<br />
Fig. 1. CBiCMOS process flow. The 3-mask complementary bipolar<br />
module uses masks (A-C) only, while masks (D) and/or (E), with the<br />
corresponding collector and isolation implants, can be added to get<br />
enhanced performance for both device types.<br />
free collectors, with the second shallow trench (SSTR) located<br />
between the active HBT region and the collector contact region,<br />
as shown in Fig. 2. The 3-mask module uses mainly CMOS<br />
well implants to form the different bipolar collectors including<br />
the vertical isolation of the pnp collector from the p - substrate<br />
(Fig. 3). The higher performance of the 5-mask module stems<br />
from extra collector and isolation implants introduced with the<br />
masks “NPN COLL” and “PNP COLL”, respectively, before<br />
forming the gate stack.<br />
HBT fabrication essentially starts after depositing the MOS<br />
gates and a Si3N4 protection layer. The fabrication steps are<br />
similar to the sequence described previously for a npn-only<br />
module (6), including the removal of the gate material from the<br />
HBT regions, growing the SiGe:C base and a Si cap layer,<br />
forming spacers, and depositing a highly-doped emitter layer.<br />
Collector Emitter<br />
n +<br />
Gate<br />
CoSi<br />
SSTR<br />
W plug<br />
p +<br />
n-SiGe:C base<br />
Collector<br />
Process core<br />
shallow trench<br />
Oxide spacer<br />
SSTR<br />
Fig. 2. SEM X-sections of a pnp SiGe:C HBT illustrating the two trench<br />
types used. Note that same hard mask, trench fill, and CMP processes are<br />
used for both trenches, as can be seen from Fig.1.<br />
Finally, the emitter and base material is removed by CMP from<br />
the Si3N4 layer surface, separating the emitter from the external<br />
base. This sequence is applied first for the npn and then again<br />
for the pnp devices. After wet etching the nitride film from the<br />
gate stack, CMOS device fabrication is completed with the gate<br />
structuring process and the source/drain implantations. These<br />
process steps are also be used for structuring and doping the<br />
HBT external base regions.<br />
Oxide spacer p + Emitter<br />
SSTR<br />
SIC<br />
n-SiGe:C base<br />
Poly SiGe:C/Si<br />
p-Well<br />
Deep n-Well (as used for NMOS isolation)<br />
n + Gate<br />
poly<br />
p + S/D<br />
Fig. 3. Schematic X-section of the PNP-1 SiGe:C HBT which uses only<br />
implants from the CMOS process core for collector formation and vertical<br />
device isolation.<br />
A n n u A l R e p o R t 2 0 0 6<br />
103
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
f T or f max (GHz)<br />
100<br />
90<br />
80<br />
70<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
0<br />
V CE = 2V<br />
10 -4<br />
f max<br />
104 A n n u A l R e p o R t 2 0 0 6<br />
Device Results<br />
Table 1 summarizes all devices available with the 3-mask and<br />
5-mask complementary bipolar module, respectively.<br />
TABLE I<br />
COMPLEMENTARY SiGe:C HBTS AVAILABLE WITH A 3-MASK OR 5-<br />
MASK BIPOLAR MODULE<br />
HBT Typical parameters (for emitter dimensions, see below)<br />
3-mask, complementary HBT module<br />
NPN-1 fT/ fmax= 40/ 80GHz, BVCEO= 5.0V, β= 220<br />
NPN-2 fT/ fmax= 63/ 95GHz, BVCEO= 3.5V, β= 220<br />
NPN-3 fT/ fmax= 120/ 110GHz, BVCEO= 2.1V, β= 220<br />
PNP-1 fT/ fmax= 32/ 35GHz, BVCEO= 4.4V, β= 25<br />
5-mask, complementary HBT module<br />
(Additional (npn) and alternative (pnp) bipolar devices)<br />
NPN-4 fT/ fmax= 150/ 160GHz, BVCEO= 2.2V, β= 220<br />
PNP-2 or* ) fT/ fmax= 43/ 65GHz, BVCEO= 4.2V, β= 25<br />
PNP-3 fT/ fmax= 38/ 70GHz, BVCEO= 5.8V, β= 25<br />
* ) Choice between low-voltage, high-fT PNP-2 and high-voltage, high-fmax<br />
PNP-3 by using different implants with mask “PNP COLL”; see Fig. 1.<br />
The drawn emitter width and length of all these devices<br />
(defined by masks “NEWIN” or “PEWIN”) is 850nm and<br />
1480nm, respectively. By applying an inside spacer technology,<br />
the effective emitter dimensions are lower, as can be seen from<br />
Fig. 2. For the RF measurements (Figs. 4-7), output<br />
characteristics (Fig. 8), and Gummel plots (Fig. 9), small arrays<br />
with ten of such devices in parallel were used.<br />
Figs. 4 and 5 show fT and fmax vs. collector current for the npn<br />
transistors, respectively. The better performance of the NPN-<br />
4 transistor in comparison to NPN-3 (where the collector is<br />
formed mainly by CMOS well implants), comes from the<br />
higher collector doping introduced with the extra mask “NPN<br />
COLL”. Fig. 6 shows fT and fmax vs. collector current for the<br />
NPN-1<br />
fT NPN-2<br />
10 -3<br />
Collector Current (A)<br />
10 -2<br />
Fig. 4: fT and fmax vs. collector current for high-voltage npn transistors (10<br />
devices in parallel).<br />
f T or f max (GHz)<br />
f T or f max (GHz)<br />
Transit Frequency (GHz)<br />
160<br />
140<br />
120<br />
100<br />
80<br />
60<br />
40<br />
20<br />
0<br />
70<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
0<br />
10 -4<br />
V CE = -3V<br />
f max<br />
10 -4<br />
f max<br />
10 -3<br />
NPN-4<br />
NPN-3<br />
V CE = 1.5V<br />
10 -2<br />
Collector Current (A)<br />
Fig. 5: fT and fmax vs. collector current for low-voltage npn transistors (10<br />
devices in parallel).<br />
PNP-3<br />
10 -4<br />
f T<br />
10 -3<br />
PNP-1<br />
Collector Current (A)<br />
10 -3<br />
f T<br />
PNP-2<br />
10 -2<br />
Fig. 6: fT and fmax vs. collector current for pnp transistors (10 devices in<br />
parallel).<br />
45<br />
40 PNP-2<br />
-3<br />
35<br />
30<br />
25<br />
-1.5<br />
-1<br />
-2<br />
20<br />
15<br />
10<br />
5<br />
V (V) CE<br />
Collector Current (A)<br />
10 -2<br />
Fig. 7: fT vs. collector current at different collector-emitter voltages for a<br />
pnp transistor.<br />
three pnp devices available. The strong improvement in fmax<br />
of PNP-2 and PNP-3 compared to PNP-1, as demonstrated in<br />
Fig. 6, results primarily from the optimized combination of<br />
collector and isolation implants, applied with the extra mask<br />
“PNP COLL”. Fig. 7 demonstrates the low voltage<br />
dependence of the pnp RF parameters resulting from the high<br />
base doping applied and a careful profile design at the basecollector<br />
junction.
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Collector Current (mA)<br />
10.0<br />
7.5<br />
5.0<br />
2.5<br />
0.0<br />
-2.5<br />
-5.0<br />
-7.5<br />
-10.0<br />
10 -11<br />
10 -10<br />
10 -9<br />
10 -8<br />
10 -7<br />
10 -6<br />
10 -5<br />
10 -4<br />
10 -3<br />
10 -2<br />
PNP-3<br />
NPN-3<br />
PNP-2<br />
PNP-1<br />
NPN-4<br />
NPN-2<br />
NPN-1<br />
-8 -7 -6 -5 -4 -3 1 2 3 4 5 6 7 8 9<br />
Collector-Emitter Voltage (V)<br />
Fig. 8: pnp and npn SiGe:C HBT open-base output characteristics.<br />
Base or Collector Current (A)<br />
PNP-1<br />
V CB = 0V<br />
NPN-4<br />
-0.8 -0.4 0.4 0.8<br />
Base-Emitter Voltage (V)<br />
Fig. 9: Gummel plots of pnp and npn SiGe:C HBTs.<br />
Figs. 8 and 9 show open-base output characteristics<br />
demonstrating the different BVCEO values, and Gummel plots,<br />
respectively.<br />
Manufacturability of the new HBT module is demonstrated<br />
by low-leakage Gummel plots of 4k pnp HBT arrays (Fig.<br />
10), and by a typical wafer map of the pnp current gain<br />
demonstrating a very low σ (Fig. 11).<br />
Summary and Conclusions<br />
In summary, we have demonstrated a new CBiCMOS SiGe:C<br />
HBT process which provides high-performance and highvoltage<br />
at a very low process complexity, and thus cost. It<br />
offers several complementary bipolar device types, including<br />
a 150GHz fT, 160GHz fmax npn and a 43GHz fT, 65GHz fmax<br />
pnp transistor by adding only 5 mask levels to a RF CMOS<br />
baseline.<br />
Base or Collector Current (A)<br />
10 -10<br />
10 -9<br />
10 -8<br />
10 -7<br />
10 -6<br />
10 -5<br />
10 -4<br />
10 -3<br />
10 -2<br />
10 -1<br />
from 7 wafer sites<br />
@ V CB = 0 and 1V<br />
-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3<br />
Base-Emitter Voltage (V)<br />
Fig. 10: Gummel plots of 4k pnp transistor arrays.<br />
No. of Devices<br />
10<br />
8<br />
6<br />
4<br />
2<br />
References<br />
Arrays of 4096<br />
pnp transistors<br />
(1) J. D. Cressler et al., “A high-speed complementary silicon bipolar<br />
technology with 12-fJ power-delay product”, IEEE Electron Device<br />
Letters, Vol. 14, pp. 523-526, November 1993.<br />
(2) D. M. Monticelli, “The future of complementary bipolar”, Proceedings of<br />
the 2004 Bipolar/BiCMOS Technology Meeting (BCTM), pp. 21-25<br />
(2004).<br />
(3) B. El-Kareh et al., “A 5V complementary-SiGe BiCMOS technology for<br />
high-speed precision analog circuits”, Proceedings of the 2003<br />
Bipolar/BiCMOS Technology Meeting (BCTM), pp. 211-214 (2003).<br />
(4) B. Heinemann et al., “A complementary BiCMOS technology with high<br />
speed npn and pnp SiGe:C HBTs”, Technical Digest of the 2002<br />
International Devices Meeting (IEDM), pp. 117-120 (2003).<br />
(5) B. Heinemann et al., “Complementary BiCMOS”, Proceedings of the 1 st<br />
Int. Symposium SiGe: Materials, Processing, and Devices, ECS, Vol.<br />
2004-07, pp. 25-31 (2004).<br />
(6) D. Knoll et al., “A flexible, low-cost, high performance SiGe:C BiCMOS<br />
process with a one-mask HBT module, Technical Digest of the 2002<br />
International Devices Meeting (IEDM), pp. 783-786 (2002).<br />
I B<br />
I C<br />
0<br />
21 22 23 24 25 26 27<br />
Beta @ V = -0.7V<br />
BE<br />
Fig. 11: Wafer histogram of pnp transistor current gain, measured on 45<br />
sites of an 8-inch wafer.<br />
A n n u A l R e p o R t 2 0 0 6<br />
105
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
106 A n n u A l R e p o R t 2 0 0 6<br />
ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
10.1149/1.2355901, copyright The Electrochemical Society<br />
Dopant Diffusion in SiGeC Alloys<br />
H. Rücker, B. Heinemann, R. Kurps, and Y. Yamamoto<br />
<strong>IHP</strong>, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany<br />
In this paper, we discuss the impact of germanium and carbon on<br />
the diffusion of common dopants in Si-based alloys. We review results<br />
of various diffusion experiments and discuss the basic physical<br />
mechanisms of the observed changes of diffusion coefficients<br />
as a function of alloy composition. Results of boron and phosphorus<br />
marker layer diffusion experiments are presented for binary<br />
Si1-xGex and Si1-yCy and ternary Si1-x-yGexCy alloys.<br />
Introduction<br />
Alloying germanium and/or carbon to the Si lattice can change diffusion coefficients of B,<br />
P, As, and Sb by more than one order of magnitude. These effects have a major impact on<br />
design and fabrication of Si-based heterojunction devices such as high-speed npn and pnp<br />
SiGe HBTs and strained channel FETs. The most prominent example for the exploitation<br />
of suppressed dopant diffusion is the npn SiGe HBT. Reduced diffusion of boron in SiGe<br />
has facilitated the fabrication of extremely sharp base doping profiles resulting in excellent<br />
RF performance. Carbon doping of the SiGe layer has been identified as a means for<br />
further suppression of the diffusion of boron and consequently became an indispensable<br />
feature of state-of-the-art high-performance SiGe HBTs.<br />
This paper is organized as follows. The next section shortly reviews diffusion experiments<br />
in strained and relaxed SiGe alloys. The impact of C on dopant diffusion in<br />
carbon-doped Si is discussed in the following section. In the final section, diffusion of B<br />
and P in ternary SiGe:C alloys is investigated by marker layer experiments.<br />
Strained and relaxed SiGe herterostructures<br />
In epitaxial SiGe layers, alloy composition and strain manipulate dopant diffusion coefficients.<br />
Cowern et al. [1] have demonstrated that the diffusion coefficients of B and Ge<br />
depend exponentially on the Ge content x in compressively strained Si1-xGex layers on Si<br />
(100) substrates. The dependence of the diffusion coefficients on the Ge content x is described<br />
by<br />
~<br />
D( x)<br />
� D0<br />
exp( xQ<br />
/ kT ) , (1)<br />
where D0 is the diffusion coefficient in Ge-free silicon and Q ~ describes a change of<br />
the activation energy with increasing Ge content. According to Ref. [1], the suppressed<br />
diffusion of B in epitaxial Si1-xGex on Si (100) is described by a coefficient Q ~ (B) = -0.71<br />
eV while the enhanced diffusion of Ge is described by a coefficient Q ~ (Ge) = 1.68 eV.<br />
Please note that these activation energy coefficients Q ~ account for contributions due to<br />
strain and due to chemical effects.<br />
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ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
For numerical simulation of dopant diffusion in SiGe layers in various strain states, a<br />
quantitative description of the individual effects of strain and of alloy composition is<br />
needed. Several experiments have been performed over the last 15 years to measure the<br />
diffusion coefficients of common dopants as a function of chemical composition and of<br />
the strain state of epitaxial Si1-xGex layers. These experiments provided a consistent picture<br />
of the qualitative effects of strain and composition. However, numerical values of the<br />
dependencies of diffusion coefficients on strain and alloy composition are still under dispute.<br />
Strain influences the diffusivity of vacancy diffusers and interstitial diffusers in opposite<br />
direction. While compressive biaxial strain suppresses the diffusion of the interstitial<br />
diffuser B [2], it enhances the diffusion of Sb [3] and Ge [4] which diffuse via a vacancy<br />
mechanism. Tensile strain changes diffusivities in the opposite direction. This behavior<br />
can be explained qualitatively by the influence of strain on the formation enthalpies of<br />
interstitial and vacancy-like point defects. In general, compressive strain increases formation<br />
energies of interstitial defects and reduces formation energies of vacancy-like defects.<br />
Consequently, interstitial densities are reduced while vacancy densities are enhanced in<br />
compressively strained layers.<br />
The chemical composition of the alloy acts in a more complex way on binding energies<br />
and mean free paths of the mobile defects of different dopant atoms. In relaxed SiGe,<br />
diffusivities of P [5], As [5], and Sb [4] are enhanced relative to those in Si while the diffusivity<br />
of B [6] is reduced.<br />
Moreover, dopant segregation at Si/SiGe interfaces has to be considered for the interpretation<br />
of diffusion experiments in SiGe heterostructures. Thus, B segregates into layers<br />
of higher Ge content while P segregates into adjacent Ge-free Si layers. This segregation<br />
is controlled by the change of the enthalpy of the substitutional dopant ion with Ge<br />
fraction due to chemical effects as well as due to electric fields caused by free carrier<br />
confinement [7-9].<br />
The impact of carbon<br />
The effect of C on the diffusion of dopants in Si and SiGe is primarily due to changed<br />
densities of the intrinsic point defects (vacancies and self-interstitials) in C-rich regions.<br />
Substitutional C in Si was found to suppress strongly the diffusion of boron during annealing<br />
of implantation damage [10] as well as during annealing steps without excess interstitials<br />
[11]. A reduction of the B diffusivity by a factor of twenty has been reported<br />
for Si:C layers with a C concentration of 1x10 20 cm -3 [11]. Diffusion of phosphorus is<br />
suppressed in a similar way while diffusion of arsenic and antimony is enhanced in Cdoped<br />
Si [12]. Since B and P diffuse via an interstitial mechanism and Sb and As diffuse<br />
via a vacancy mechanism, these observations indicate a suppressed density of self-interstitials<br />
and an enhanced density of vacancies in C-doped Si.<br />
Fast out-diffusion of C from regions of high C concentration has been identified as<br />
the driving force for these non-equilibrium point defect densities [13]. During anneals, C<br />
diffuses out of regions of high C concentration. C diffusion in Si occurs via a substitutional-interstitial<br />
exchange mechanism. Immobile substitutional carbon atoms (Cs) are<br />
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108 A n n u A l R e p o R t 2 0 0 6<br />
transformed into mobile interstitial carbon (Ci) through the kick-out reaction with Si selfinterstitials<br />
(I)<br />
Cs + I � Ci. (2)<br />
In addition, interstitial C can be formed in the dissociative Frank-Turnbull reaction<br />
Cs � Ci +V, (3)<br />
where V is a vacancy. The flux of mobile Ci defects out of C-rich regions has to be<br />
compensated by an opposite flux of Si self-interstitials into the C-rich region, and/or a<br />
flux of vacancies outwards. For C concentrations above ~10 18 cm -3 , the product of the C<br />
concentration and the C diffusion coefficient exceeds the corresponding transport parameters<br />
for the fluxes of self-interstitials and vacancies:<br />
CCDC > CI eq DI and CCDC > CV eq DI . (4)<br />
Under these conditions, diffusion of C becomes limited by the compensating fluxes of<br />
Si point defects, which in turn leads to an undersaturation of self-interstitials and a supersaturation<br />
of vacancies in the C-rich region [12-14]. In addition, C precipitation can cause<br />
a further suppression of the density of self-interstitials for C concentrations of about<br />
10 20 cm -3 and higher [15].<br />
Ternary Si1-x-yGexCy alloys<br />
In ternary Si1-x-yGexCy alloys, the discussed effects of germanium and carbon act simultaneously.<br />
Carbon doping causes an additional reduction of the diffusivity of B in<br />
SiGe [9]. It has been reported that the suppression of B diffusion due to carbon can be<br />
even stronger in SiGe:C than in Si:C [16].<br />
We have studied the combined effects of Ge and C alloying on the diffusion of<br />
dopants by marker layer experiments in binary Si1-xGex and Si1-yCy and ternary<br />
Si1-x-yGexCy layers. Boron and phosphorus diffusion markers were in situ grown by low<br />
pressure CVD in Si, Si0.9Ge0.1, and Si0.8Ge0.2 layers with three different C concentrations<br />
in each case. The SiGe:C layers are pseudomorphically strained on Si (100) substrates.<br />
Diffusion coefficients were extracted from numerical fitting of secondary-ion mass<br />
spectroscopy (SIMS) depth profiles measured before and after annealing. SIMS profiles<br />
were measured using a CAMECA IMS WF with a 0.5 keV O2 ion beam for B and Ge<br />
profiling and a 1 keV Cs ion beam for P and C profiling.<br />
Boron Diffusion<br />
ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
Three wafers with boron diffusion markers were grown. Each water contained tree<br />
boron spikes with peak concentrations of about 2x10 18 cm -3 . The boron spikes were centered<br />
in 25nm wide Si1-x-yGexCy layers with different alloy compositions. Typical depth<br />
profiles are shown in Fig. 1 for the wafer with a Ge content of 10% in the alloy layers.<br />
The as-grown C concentrations for the three spikes are 1x10 20 cm -3 , 3x10 19 cm -3 , and below<br />
the detection limit of 1x10 18 cm -3 , respectively. For the other two wafers the Ge content<br />
was changed to 20% and 0% while B and C profiles were similar to the first wafer.<br />
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B & C Concentration (cm -3 )<br />
10 20<br />
10 19<br />
10 18<br />
10 17<br />
ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
10<br />
0 50 100 150 200<br />
16<br />
Depth (nm)<br />
Figure 1. SIMS profiles of B diffusion markers in Si0.9Ge0.1:C layers with three different<br />
C concentrations. The as-grown Ge, C, and B profiles are shown together with the diffused<br />
boron profile after annealing at 900ºC for 1 hour.<br />
Diffused profiles were measured for all samples after annealing at 900ºC for 15 minutes<br />
and for 1 hour. For the chosen low B concentrations, B diffusion is well described by<br />
Fickian diffusion with constant diffusion coefficients. Diffusion coefficients were extracted<br />
by fitting the annealed B profiles with a Fickian diffusion equation using the asgrown<br />
B profile as input. The obtained diffusion coefficients at 900ºC are plotted in Fig.<br />
2 as a function of Ge and C concentrations.<br />
The diffusion coefficients of B in the C-free SiGe samples shown in Fig. 2 confirm<br />
the exponential dependence on Ge content proposed in [1]. For each of the three C concentrations<br />
investigated here, we have applied Eq. (1) to fit the B diffusion coefficients as<br />
a function of the Ge content (lines in Fig. 2). Results of the fit are summarized in Table 1.<br />
TABLE I. Diffusion parameters of B in SiGe:C alloys at 900ºC obtained from fitting the data of Fig. 2<br />
to Eq. (1).<br />
Carbon concentration (cm -3 )<br />
D 0 (cm -2 /s) Q ~ (eV)<br />
< 1E18 9.7 10 -14 -0.58<br />
3E19 2.2 10 -14 -0.81<br />
1E20 5.4 10 -13 -0.65<br />
Carbon doping results in a suppression of B diffusivities by almost the same factor for<br />
the three considered Ge concentrations. C concentrations of 3E19cm -3 were found to suppress<br />
B diffusivities by about a factor of 5 while C concentrations of 1E20cm -3 suppressed<br />
B diffusivities by about a factor of 20. Within the accuracy of the present experiments,<br />
the suppression of boron diffusion in SiGe:C can be described as a product of<br />
a retardation coefficient due to Ge and a retardation coefficient due to C.<br />
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14<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
Ge Content (%)<br />
A n n u A l R e p o R t 2 0 0 6<br />
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110 A n n u A l R e p o R t 2 0 0 6<br />
B Diffusion Coefficient (10 -14 cm -2 /s)<br />
10<br />
1<br />
0.1<br />
no C<br />
3x10 19 cm -3 C<br />
1x10 20 cm -3 C<br />
0.0 0.1 0.2<br />
Ge Content<br />
Figure 2. Extracted diffusion coefficients of B in SiGe:C alloys at 900ºC as a function<br />
of Ge and C concentrations. Error bars were estimated from the scattering of the fitted<br />
diffusion coefficients for different annealing times and from uncertainties of the numerical<br />
fits. Lines are fits of the diffusion coefficients as a function of the Ge content according<br />
to Eq. (1).<br />
Phosphorus Diffusion<br />
We have investigated the diffusion of P in Si, Si0.9Ge0.1, Si0.8Ge0.2, and Si0.8Ge0.2:C<br />
doped with 5x10 19 cm -3 carbon.. All layers are grown pseudomorphically on Si (100)<br />
substrates. Two P diffusion profiles in Si and strained Si0.9Ge0.1 are shown in Fig. 3.<br />
P Concentration (cm -3 )<br />
10 18<br />
10 17<br />
(a)<br />
ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
20 40 60 80 100<br />
1073<br />
(b)<br />
Depth (nm)<br />
20 40 60 80 100 0<br />
Figure 3. SIMS profiles of P diffusion markers in as-grown samples and after annealing<br />
at 900ºC for 15 min. (a) Si reference sample, (b) Si0.9Ge0.1 sample.<br />
10<br />
8<br />
6<br />
4<br />
2<br />
Ge Content (%)
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
According to the previous discussion, P diffusion in compressively strained SiGe is<br />
expected to be suppressed due to strain and enhanced due to Ge alloying. Fig. 3 indicates<br />
that the combined effect of strain and alloy composition is a slower diffusion of P in<br />
Si0.9Ge0.1 than in Si. Moreover, Fig. 3 indicates a segregation of P from the Si0.9Ge0.1<br />
layer into the adjacent Si region.<br />
This segregation of P is much more pronounced for the Si0.8Ge0.2 sample (Fig.4a).<br />
Comparison of the P diffusion profiles in Figs. 4a and 4b shows that C doping results in a<br />
strong suppression of P diffusion in SiGe. However, more experimental data are needed<br />
for an accurate determination of diffusion and segregation coefficients of P as a function<br />
of Ge and C concentration.<br />
P & C Concentration (cm -3 )<br />
10 20<br />
10 19<br />
10 18<br />
10 17<br />
(a)<br />
10<br />
0 50 100<br />
16<br />
ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
Ge<br />
0 50 100 150 0<br />
Depth (nm)<br />
Figure 4. SIMS profiles of P diffusion markers in as-grown samples and after annealing<br />
at 900ºC for 60 min. (a) Si0.8Ge0.2 sample without carbon doping (b) Si0.8Ge0.2 sample<br />
doped with 5x10 19 cm -3 carbon.<br />
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(b)<br />
Conclusions<br />
Dopant diffusion coefficients in SiGe:C alloy show changes of more than one order<br />
of magnitude as a function of alloy composition. In SiGe heterostructures, diffusion coefficients<br />
are influenced by Ge content, strain and segregation across Si/SiGe interfaces. C<br />
doping suppresses diffusion coefficients of the interstitial diffusers B and P and enhances<br />
diffusion coefficients of the vacancy diffusers As and Sb. In ternary SiGe:C alloys, the<br />
suppression of the diffusion coefficient of boron can be approximately described as a<br />
product of a retardation coefficient due to Ge and a retardation coefficient due to C.<br />
References<br />
1. N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravensteijn, and W. B. de<br />
Boer, Phys. Rev. Lett. 72, 2585 (1994).<br />
2. N. R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hnasen, and A. Nylandsted<br />
Larsen, J. Appl. Phys. 94, 3883 (2003).<br />
C<br />
Ge<br />
20<br />
15<br />
10<br />
5<br />
Ge Content (%)<br />
A n n u A l R e p o R t 2 0 0 6<br />
111
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
112 A n n u A l R e p o R t 2 0 0 6<br />
ECS Transactions, 3 (7) 1069-1075 (<strong>2006</strong>)<br />
3. P. Kringhoj, A. Nylandsted Larsen, and S. Y. Shirayev, Phys. Rev. Lett. 76, 3372<br />
(1996).<br />
4. G. Xia, O. O. Olubuyide, J. L. Hoyt, and M. Canonico, Appl. Phys. Lett. 88,<br />
013507 (<strong>2006</strong>).<br />
5. S. Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 80,<br />
1743 (2002).<br />
6. P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, and D. Lefforge, Appl. Phys. Lett.<br />
66, 580 (1995).<br />
7. S. M. Hu, D. C. Ahlgren, P. A. Rosenheim, and J. O. Chu, Phys. Rev. Lett. 67,<br />
1450 (1991).<br />
8. R. F. Lever, J. M. Bonar, and A. F. W. Willoughby, J. Appl. Phys. 83 1988<br />
(1998).<br />
9. H. Rücker and B. Heinemann, Solid-State Electronics 44 783 (2000).<br />
10. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D.C. Jacobson, C. S. Rafferty, G.<br />
H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftmann, and T. E. Hayes, Appl. Phys.<br />
Lett. 66, 1370 (1995).<br />
11. H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, and H. J.<br />
Osten, Appl. Phys. Lett. 73, 1682 (1998) and 75, 147 (E) (1999) .<br />
12. H. Rücker, B. Heinemann, D. Bolze, D. Knoll, D. Krüger, R. Kurps, H. J. Osten,<br />
P. Schley, B. Tillack, and P. Zaumseil, Technical Digest, International Electron<br />
Device Meeting, (IEEE, Piscataway, NJ, 1999) p.109.<br />
13. R. Scholz, U. Gösele, J.-Y. Huh, and T. Y. Tan, Appl. Phys. Lett. 72, 200 (1998).<br />
14. R. F. Scholz, P. Werner, U. Gösele, and T. Y. Tan, Appl. Phys. Lett. 74, 392<br />
(1999).<br />
15. H. Rücker, B. Heinemann, and R. Kurps, Phys. Rev. B 64, 073202 (2001).<br />
16. M. S. A. Karunaratne, A. F. W. Willoughby, J. M. Bonar, J. Zhang, and P.<br />
Ashburn, J. Appl. Phys. 97, 113531 (2005).<br />
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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 8, AUGUST <strong>2006</strong> 1937<br />
Briefs<br />
High-Quality Al2O3/Pr2O3/Al2O3 MIM Capacitors<br />
for RF Applications<br />
Ch. Wenger, G. Lippert, R. Sorge, T. Schroeder, A. U. Mane,<br />
G. Lupina, J. Dabrowski, P. Zaumseil, X. Fan, L. Oberbeck,<br />
U. Schroeder, and H.-J. Müssig<br />
Abstract—The electrical characteristics of layered Al2O3/Pr2O3/<br />
Al2O3 metal–insulator–metal (MIM) capacitors for RF device applications<br />
are presented for the first time. This advanced dielectric layer system<br />
4-nm Al2O3/8-nm Pr2O3/4-nm Al2O3 shows a high capacitance density<br />
of 5.7 fF/µm 2 , a low leakage current density of 5 × 10 −9 A/cm 2 at 1 V,<br />
and an excellent dielectric loss behavior over the studied frequency range.<br />
Index Terms—Capacitor, high-κ, metal–insulator–metal (MIM), thinfilm<br />
devices, voltage linearity.<br />
I. INTRODUCTION<br />
The metal–insulator–metal (MIM) capacitors as passive devices<br />
for RF and mixed-signal IC applications have attracted much attention.<br />
The replacement of conventional SiO2 and Si3N4 by high-k<br />
dielectric materials is essential to reduce the capacitor area. Recently,<br />
several high-k materials such as Al2O3, AlTiOx, AlTaOx,<br />
(HfO2)1−x(Al2O3)x, HfO2, ZrO2, Y2O3, Ta2O5, PrTixOy, and Pr2O3<br />
have been investigated as potential MIM capacitor dielectrics [1]–[10].<br />
Pr2O3 exhibits a promising k-value of 15–30 [7]. However, because<br />
of moderate leakage characteristics [9], MIM capacitors including<br />
pure Pr2O3 dielectrics are not suitable for RF applications. As an<br />
alternative, layered Al2O3/Pr2O3/Al2O3 MIM capacitors are promising<br />
candidates to meet the requirements of the current International<br />
Roadmap for Semiconductors (ITRS). In this brief, we present a<br />
new high-k MIM stack with a high capacitance density as high as<br />
5.7 fF/µm 2 and a low leakage current density. The intrinsic losses<br />
of the dielectrics were extracted by equivalent circuit simulation.<br />
II. EXPERIMENTS<br />
Sputtered TiN films with a thickness of 10 nm were used as bottom<br />
electrodes. Al2O3 and Pr2O3 films with various thicknesses were<br />
deposited by electron beam evaporation, with 4-nm-thick Al2O3 layers<br />
at the bottom and top sides of the dielectric stack. The thickness of<br />
the Pr2O3 layers was varied in the range of 9–77 nm. The Al2O3 and<br />
Pr2O3 layers were deposited at 100 ◦ C. Finally, Au dots with a diameter<br />
of 400 µm were evaporated through a shadow mask. Capacitance<br />
density, leakage current, and dielectric loss were measured to electrically<br />
characterize the MIM capacitors. Physical analysis of the stacked<br />
films was done by cross section transmission electron microscopy<br />
(XTEM), X-ray reflection (XRR), and X-ray diffraction (XRD).<br />
Manuscript received February 7, <strong>2006</strong>; revised April 27, <strong>2006</strong>. This work<br />
was supported within the scope of technology development by the EFRE fund<br />
of the European Community and by the State Saxony of the Federal Republic<br />
of Germany. The review of this brief was arranged by Editor V. R. Rao.<br />
Ch. Wenger, G. Lippert, R. Sorge, T. Schroeder, A. U. Mane, G. Lupina,<br />
J. Dabrowski, P. Zaumseil, X. Fan, and H.-J. Müssig are with <strong>IHP</strong>, 15236<br />
Frankfurt (Oder), Germany (e-mail: wenger@ihp-microelectronics.com).<br />
L. Oberbeck and U. Schroeder are with Infineon Technologies SC300 GmbH<br />
and Co. OHG, 01099 Dresden, Germany.<br />
Digital Object Identifier 10.1109/TED.<strong>2006</strong>.877870<br />
0018-9383/$20.00 © <strong>2006</strong> IEEE<br />
Fig. 1. XTEM picture of the Al2O3/Pr2O3/Al2O3 stack MIM capacitor.<br />
III. RESULTS AND DISCUSSIONS<br />
MIM capacitors with Pr2O3 as the dielectric demonstrated high-k<br />
values (∼ 15), but the leakage current density is not sufficiently low<br />
[9]. For this reason, we use the band-offset engineering approach by<br />
sandwiching the Pr2O3 film between two layers of the wide band gap<br />
insulator Al2O3. Aside from the increase of the electric barrier height,<br />
the top Al2O3 layer also acts as a cap to protect the Pr2O3 film against<br />
humidity. The hygroscopic nature is a well-known characteristic of<br />
Pr2O3 [11]. Positive fixed charges can be created by water absorption<br />
from air, which affect the electrical characteristics in an indefinite<br />
manner.<br />
Due to the moderate k-value of Al2O3 (∼ 8), the resulting capacitance<br />
of the Al2O3/Pr2O3/Al2O3 stacked MIM capacitors will be<br />
reduced. Therefore, the Al2O3 layer thickness must be kept as thin as<br />
possible to obtain high capacitance densities, but its barrier capability<br />
against water diffusion has to be ensured. To meet both requirements,<br />
the thickness of the Al2O3 was set to 4 nm.<br />
The XTEM image of a stacked MIM capacitor with 4-nm<br />
Al2O3/8-nm Pr2O3/4-nm Al2O3 is shown in Fig. 1. The thickness of<br />
the dielectric stack was determined by XTEM and controlled by XRR.<br />
XRD experiments (not shown) indicate that the Al2O3 and the Pr2O3<br />
layers are amorphous. The capacitance density, which is measured at<br />
10 kHz as a function of dielectric thickness, is illustrated in Fig. 2.<br />
The highest capacitance value of 5.7 fF/µm 2 was obtained by a stack<br />
of 4-nm Al2O3/9-nm Pr2O3/4-nm Al2O3. A model of three serial<br />
capacitors was used to calculate the capacitance density. The fitting<br />
parameters of these procedure were the k-values of Al2O3 and Pr2O3,<br />
whereas the thicknesses of the dielectric films were determined by<br />
XRR. The derived k-values are 8 for Al2O3 and 15 for Pr2O3. The<br />
capacitance densities of pure Al2O3 and Pr2O3 capacitors, which are<br />
calculated using these k-values, are shown in Fig. 2 (dotted lines).<br />
The capacitance of thin stacked MIM capacitors is dominated by the<br />
k-value of Al2O3, whereas the effective k-value of thicker MIM stacks<br />
is regulated by Pr2O3. The dissipation factors (tan δ) obtained from<br />
MIM capacitors with different Pr2O3 thicknesses at 0 V bias voltage<br />
are shown in Fig. 3. The stacked capacitor with 5.7 fF/µm 2 exhibits<br />
a small tan δ of 0.02 at a frequency of 10 kHz. With increasing the<br />
Pr2O3 thickness, the dielectric loss increases. To extract the intrinsic<br />
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1938 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 8, AUGUST <strong>2006</strong><br />
Fig. 2. Capacitance density versus thickness of the stacked Al2O3/Pr2O3/<br />
Al2O3 dielectrics. Solid line: serial capacitor model. Dotted line: single-layer<br />
Al2O3 and Pr2O3 capacitors.<br />
Fig. 3. Loss tangent (tan δ) of stacked MIM capacitors with different Pr2O3<br />
thicknesses as a function of frequency at 0 V. Solid line: simulated loss tangents.<br />
Fig. 4. Equivalent circuit for a layered Al2O3/Pr2O3/Al2O3 MIM capacitor.<br />
dissipation losses of the stacked dielectrics, the tan δ of the equivalent<br />
circuit was simulated, as shown in Fig. 4. The required capacitance<br />
values are extracted from capacitance–voltage measurements, and<br />
the conductivities of the Al2O3 and Pr2O3 layers are determined<br />
from leakage current–voltage characteristics. The leakage currents of<br />
single-layer Al2O3 and Pr2O3 MIM capacitors are shown in Fig. 5<br />
and will be discussed later in the text. The simulated loss tangents are<br />
114 A n n u A l R e p o R t 2 0 0 6<br />
Fig. 5. Leakage current density at 1 V of single-layer Pr2O3 and Al2O3 MIM<br />
capacitors as a function of dielectric film thickness. The current measurement<br />
of Al2O3 is limited by the sensitivity of the instrument.<br />
Fig. 6. Extracted access loss tangent as a function of frequency.<br />
represented as solid lines in Fig. 3. The paraboliclike behavior can be<br />
simulated, but it is clearly seen that there is an access loss, which is<br />
not included in the used equivalent circuit. The increase of tan δ in the<br />
high-frequency range above 100 kHz is caused by additional losses<br />
like contact resistances. Interfacial relaxation, which is so-called the<br />
Maxwell–Wagner effect, leads to an increase of tan δ in the frequency<br />
regime below 10 kHz. The excess dielectric loss in the middle of the<br />
frequency regime cannot be explained by the equivalent circuit model.<br />
By subtracting the simulated loss tangent from the measured losses, we<br />
extracted the access tan δ, as shown in Fig. 6. It is clearly seen that the<br />
access dissipation factor rises with increasing Pr2O3-film thickness.<br />
Various microscopic mechanisms can be listed to explain the dielectric<br />
loss in the Pr2O3 layer. For example, free carriers are stored<br />
at the dielectric–electrode interfaces, leading to space charges [12].<br />
By applying an electric field, macroscopic dipoles will be created,
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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 8, AUGUST <strong>2006</strong> 1939<br />
Fig. 7. Leakage current densities of stacked MIM capacitors as a function of<br />
the applied voltage.<br />
resulting in space charge relaxation processes. The dielectric can also<br />
become a loss by dipolar relaxation of moving oxygen vacancies.<br />
Further work is on the way to determine the microscopic origin of the<br />
observed dielectric loss.<br />
The leakage currents of single-layer Al2O3 and Pr2O3 MIM capacitors<br />
are shown in Fig. 5. Over the studied film thickness range, the<br />
leakage current of Pr2O3 is strongly affected by the film thickness,<br />
whereas the leakage mechanism of Al2O3 is weakly influenced. The<br />
current measurement in this range is limited by the sensitivity of the<br />
instrument. Because of the higher band gap of Al2O3 (∼ 8.8 eV) [13],<br />
the leakage current density is lower than that of Pr2O3. The estimated<br />
band gap of Pr2O3 is around 4.6 eV [14].<br />
The observed leakage current characteristics of the stacked dielectrics<br />
are shown in Fig. 7. The dielectric stack of 4-nm<br />
Al2O3/9-nm Pr2O3/4-nm Al2O3 exhibits the lowest leakage current<br />
density of 5 × 10 −9 A/cm 2 at 1 V. The increment of the Pr2O3<br />
thickness leads to higher leakage current densities, which correspond<br />
to the loss tangent characteristics.<br />
IV. CONCLUSION<br />
The MIM capacitor with a dielectric stack composed of 4-nm<br />
Al2O3/9-nm Pr2O3/4-nm Al2O3 exhibits excellent electrical performances,<br />
such as high capacitance density, low dielectric loss, and<br />
excellent leakage current density. This laminated capacitor meets the<br />
requirements for passive MIM devices in RF applications. However,<br />
by increasing the Pr2O3-film thickness, the loss tangent as well as the<br />
leakage current density rise.<br />
REFERENCES<br />
[1] S. B. Chen, C. H Lai, A. Chin, J. C. Hsieh, and J. Liu, “High-density MIM<br />
capacitors using Al2O3 and AlTiOx dielectrics,” IEEE Electron Device<br />
Lett., vol. 23, no. 4, pp. 185–187, Apr. 2002.<br />
[2] M. Y. Yang, C. H. Huang, A. Chin, C. Zhu, M. F. Li, and D.-L. Kwong,<br />
“High-density MIM capacitors using AlTaOx Dielectrics,” IEEE Electron<br />
Device Lett., vol. 24, no. 5, pp. 306–308, May 2003.<br />
[3] H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong,<br />
P. D. Foo, M. B. Yu, X. Liu, and J. Winkler, “MIM capacitors using<br />
atomic-layer-deposited high-k (HfO2)1−x(Al2O3)x dielectrics,” IEEE<br />
Electron Device Lett., vol. 24, no. 2, pp. 60–62, Feb. 2003.<br />
0018-9383/$20.00 © <strong>2006</strong> IEEE<br />
[4] X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong,<br />
P. D. Foo, and M. B. Yu, “A high-density MIM capacitor (13 fF/µm 2 )<br />
using ALD HfO2 dielectrics,” IEEE Electron Device Lett., vol. 24, no. 2,<br />
pp. 63–65, Feb. 2003.<br />
[5] S.-Y. Lee, H. Kim, P. C. McIntyre, K. C. Sarawat, and J.-S. Byun, “Atomic<br />
layer deposition of ZrO2 on W for metal–insulator–metal capacitor application,”<br />
Appl. Phys. Lett., vol. 82, no. 17, pp. 2874–2876, Apr. 2003.<br />
[6] C. Durand, C. Vallée, V. Loup, O. Salicio, C. Dubourdieu, S. Blonkowski,<br />
M. Bonvalot, P. Holliger, and O. Joubert, “Metal–insulator–metal capacitors<br />
using Y2O3 dielectric grown by pulsed-injection plasma enhanced<br />
metal–organic chemical vapor deposition,” J. Vac. Sci. Technol. A, Vac.<br />
Surf. Films, vol. 22, no. 3, pp. 655–660, May 2004.<br />
[7] T. Busani and R. A. B. Devine, “The importance of network structure in<br />
high-k dielectrics: LaAlO3, Pr2O3, and Ta2O5,” J. Appl. Phys., vol. 98,<br />
no. 4, p. 044102, Aug. 2005.<br />
[8] T. Ishikawa, D. Kodama, Y. Matsui, M. Hiratani, T. Furusawa, and<br />
D. Hisamoto, “High-capacitance Cu/Ta2O5/Cu MIM structure for SoC<br />
applications featuring a single-mask add-on process,” in IEDM Tech. Dig,<br />
2002, pp. 940–942.<br />
[9] C. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert,<br />
and H.-J. Müssig, “First investigation of metal–insulator–metal (MIM)<br />
capacitor using Pr2O3 dielectrics,” Mater. Sci. Semicond. Process., vol. 7,<br />
no. 4–6, pp. 227–230, 2004.<br />
[10] C. Wenger, R. Sorge, T. Schroeder, A. U. Mane, G. Lippert, G. Lupina,<br />
J. Dabrowski, P. Zaumseil, and H.-J. Muessig, “MIM capacitors using<br />
amorphous high-k PrtixOy dielectrics,” Micrelectron. Eng., vol. 80,<br />
pp. 313–316, Jun. 2005.<br />
[11] S. Jeon and H. Hwang, “Effect of hygroscopic nature on the electrical<br />
characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3 and<br />
Dy 2 O3),” J. Appl. Phys., vol. 93, no. 10, pp. 6393–6395, May 2003.<br />
[12] R. Coelho, Physics of Dielectrics. Amsterdam, The Netherlands: Elsevier,<br />
1979, ch. 7.<br />
[13] J. Robertson, “Band offets of wide-band-gap oxides and implications for<br />
future electronic devices,” J. Vac. Sci. Technol. B, Miocroelectron, vol. 18,<br />
no. 3, pp. 1785–1789, 2000.<br />
[14] A. V. Prokofiev, A. I. Shelykh, and B. T. Melekh, “Periodicity in the band<br />
gap variation of Ln2X3 (X = O, S, Se) in the lanthanide series,” J. Alloys<br />
Compd., vol. 242, no. 1, pp. 41–44, Sep. 1996.<br />
The Improvement of Polycrystalline Silicon TFTs<br />
Fabricated by Employing Periodic Metal Pads<br />
Hsu-Yu Chang, Chao-Yu Meng, Ming-Wei Tsai,<br />
Bo-Chuan Yang, Tzu-Hung Chuang, and Si-Chen Lee<br />
Abstract—Polysilicon films with regular-sized and large grains were<br />
fabricated by employing periodic metal (Cr–Al) pads as the heat sinks<br />
and with underlying silicon oxynitride (SiON) as the heat absorption<br />
layer. The poly-Si could grow to regular hexagonal grains after excimer<br />
laser annealing (ELA). The thin-film transistors (TFTs) fabricated by<br />
this method show uniform characteristics that are suitable for large-area<br />
applications. The TFT achieves a field-effect mobility of 270 cm 2 /V · s and<br />
an ON–OFF current ratio exceeding 10 8 . It is found that the TFT with the<br />
smaller channel width and length results in a better subthreshold swing<br />
because it contains fewer grain boundaries and, thus, fewer defects. After<br />
comparing the performance of TFTs using either double-metal Cr–Al<br />
or single-metal Al photonic-crystal pads, it is found that the Cr could<br />
efficiently impede the diffusion of Al into Si during ELA.<br />
Index Terms—Photonic crystal, polycrystalline silicon, thin-film<br />
transistor (TFT).<br />
Manuscript received October 13, 2005; revised April 21, <strong>2006</strong>. This work<br />
was supported by the National Science Council of Taiwan, R.O.C., under<br />
Contract NSC 93-2215-E-002-046. The review of this brief was arranged by<br />
Editor T. Skotnicki.<br />
The authors are with the Graduate Institute of Electronic Engineering and<br />
Department of Electrical Engineering, National Taiwan University, Taipei<br />
10617, Taiwan, R.O.C.<br />
Digital Object Identifier 10.1109/TED.<strong>2006</strong>.877873<br />
A n n u A l R e p o R t 2 0 0 6<br />
115
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Praseodymium silicate films on Si„100… for gate dielectric applications:<br />
Physical and electrical characterization<br />
G. Lupina, a� T. Schroeder, J. Dabrowski, Ch. Wenger, A. U. Mane, and H.-J. Müssig<br />
<strong>IHP</strong>-<strong>Microelectronics</strong>, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany<br />
P. Hoffmann and D. Schmeisser<br />
Angewandte Physik-Sensorik, BTU Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany<br />
�Received 9 November 2005; accepted 12 March <strong>2006</strong>; published online 12 June <strong>2006</strong>�<br />
Praseodymium �Pr� silicate dielectric layers were prepared by oxidation and subsequent N 2<br />
annealing of thin Pr metal layers on SiO 2/Si�100� substrates. Transmission electron microscopy<br />
studies reveal that the resulting dielectric has a bilayer structure. Nondestructive depth profiling by<br />
using synchrotron radiation x-ray photoelectron spectroscopy shows that, starting from the<br />
substrate, the dielectric stack is composed of a SiO 2-rich and a SiO 2-poor Pr silicate phase. Valence<br />
and conduction band offsets of about 2.9 and 1.6 eV, respectively, between the dielectric and the<br />
Si�100� substrate bands were deduced. Pr silicate films with an equivalent oxide thickness of 1.8 nm<br />
show approximately three orders of magnitude lower leakage currents than silicon oxynitride<br />
references. Capacitance versus voltage measurements of the Pr silicate/Si�100� system report a flat<br />
band voltage shift of 0.22 V, an effective dielectric constant of about 11 and a reasonably good<br />
interface quality with an interface state density on the order of 10 11 cm −2 . Experimental results are<br />
supplemented by ab initio considerations which review the most probable mechanisms of fixed<br />
charge formation in the Pr silicate layers. © <strong>2006</strong> American Institute of Physics.<br />
�DOI: 10.1063/1.2202235�<br />
I. INTRODUCTION<br />
The continuous reduction of metal-oxide-semiconductor<br />
field-effect transistor �MOSFET� dimensions was in the past<br />
the major factor contributing to the performance increase of<br />
integrated circuits �IC’s�. 1,2 However, as the MOSFET channel<br />
length is shrinked to the nanometer regime, alternative<br />
device designs, and alternative materials are necessary to<br />
continue scaling at the current rate. 3 One of the key challenges<br />
is the replacement of the traditional silicon dioxide<br />
�SiO 2� gate dielectric which has become thinner than 1.5 nm<br />
in state-of-the-art devices and does not provide sufficient insulation<br />
anymore. 4 Although considerable progress was<br />
achieved in optimizing oxynitride dielectrics to reduce the<br />
gate leakage currents as compared to SiO 2, the introduction<br />
of a material with higher dielectric constant �high k� is very<br />
desirable. 3 Therefore, different high-k dielectrics on silicon<br />
�Si� are currently studied. Many of the metal oxides that<br />
initially appeared attractive due to their high dielectric constants<br />
were eliminated because of either low conduction<br />
band offset with respect to Si �e.g., TiO 2, Ta 2O 5� or thermodynamic<br />
instability in contact with Si �e.g., ZrO 2�. 5,6 In contrast<br />
to these binary compounds, transition and rare-earth<br />
metal silicates satisfy many requirements for gate dielectrics<br />
in advanced MOSFET devices, i.e., silicate-type materials<br />
show reasonable k values and form a high quality interface<br />
on Si comparable with state-of-the-art SiO 2/Si systems. 7<br />
Based on these arguments, it is desirable to engineer a com-<br />
a� Author to whom correspondence should be addressed; electronic mail:<br />
lupina@ihp-microelectronics.com<br />
116 A n n u A l R e p o R t 2 0 0 6<br />
JOURNAL OF APPLIED PHYSICS 99, 114109 �<strong>2006</strong>�<br />
positionally graded silicate film with a SiO 2-rich interface<br />
layer on Si �high carrier mobility� and a SiO 2-poor top layer<br />
�high dielectric constant�.<br />
In this study, we take advantage of the high tendency of<br />
praseodymium �Pr� to form silicates. 8 As a main result, it is<br />
found that the solid state reaction of Pr with SiO 2/Si�100�<br />
results in a silicate film morphology of the above given bilayer<br />
structure.<br />
II. EXPERIMENT<br />
Phosphorus-doped Si�100� wafers ��=0.3–0.6 � cm�<br />
covered with thin ��1.2 nm� SiO 2 layers formed by a<br />
chemical passivation procedure 9 were used as substrates.<br />
About 2-nm-thick Pr films were deposited on these substrates<br />
by molecular beam epitaxy �MBE� while the wafer<br />
was kept at room temperature �RT�. Base pressure in the<br />
process chamber during deposition was in the 10 −8 mbar<br />
range. Following the deposition, samples were oxidised in<br />
air at RT. Subsequently, a postdeposition annealing step �<br />
1 min at 700 °C� in nitrogen �N 2� with oxygen partial pressure<br />
of 10 −5 mbar was applied. In this way Pr silicate layers<br />
with thickness of about 5 nm were obtained.<br />
Characterization of the film composition after each<br />
preparation step was performed by x-ray photoelectron<br />
spectroscopy �XPS� using nonmonochromatized AlK�<br />
�1486.6 eV� radiation and a PHI 10–360 energy analyzer. Si<br />
2p, O 1s, and Pr 3d core level spectra were collected at a<br />
takeoff angle of 45°. After preparation, the structure and the<br />
chemical composition of the dielectrics was determined.<br />
Transmission electron microscopy �TEM� images were obtained<br />
using a Philips CM 300 microscope with a point-to-<br />
0021-8979/<strong>2006</strong>/99�11�/114109/8/$23.00 99, 114109-1<br />
© <strong>2006</strong> American Institute of Physics<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
114109-2 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
point spatial resolution of 1.8 Å. Nondestructive depth profiling<br />
studies by synchrotron radiation XPS �SR-XPS� were<br />
performed at the UPGM 49/2 undulator beamline of BESSY<br />
II. 10 Incident photon energies �E 0� of 350, 600, 850, and<br />
1100 eV were chosen to allow depth profile studies covering<br />
the whole dielectric film thickness. The emitted photoelectrons<br />
were collected with an Omicron EA 125 hemispherical<br />
energy analyzer at a takeoff angle of 85° with respect to the<br />
sample surface. All XPS and SR-XPS spectra were referenced<br />
to the Au 4f 7/2 line �84 eV�. The electron inelastic<br />
mean free path �IMFP� for Si 2p, O 1s, and Pr 3d photoelectrons<br />
was estimated using the NIST Standard Reference Database<br />
71. 11 The corresponding sampling depth was defined<br />
as three times the IMFP.<br />
For electrical characterization, metal-insulator-semiconductor<br />
�MIS� capacitors were formed by in situ evaporation<br />
of gold �Au� electrodes of �200 nm thickness on the Pr<br />
silicate/Si�100� system. The backside of each sample was<br />
coated with a �300-nm-thick Al layer. Finally, a postmetallization<br />
annealing step �15 min at 300 °C� in forming gas<br />
�5% H 2 in N 2� was applied. The capacitance versus voltage<br />
�CV� measurements were performed in serial mode at a frequency<br />
of 10 kHz using an Agilent 4294A impedance analyzer.<br />
Equivalent oxide thickness �EOT� was extracted from<br />
the accumulation capacitance using the QITFIT software<br />
which applies a quantum-mechanical correction for charge<br />
quantization in the Si substrate. 12 Current versus voltage<br />
�JV� characteristics were obtained using an AVT 110 wafer<br />
tester.<br />
Ab initio calculations were done with the ab initio<br />
pseudopotential plane wave code FHI96MD. 13,14 We applied<br />
the local density approximation �LDA� for the exchange and<br />
correlation energy 15,16 and nonlocal pseudopotentials in the<br />
Trouller-Martins scheme 17,18 with 40 Ry cutoff for plane<br />
waves. Since numerous defect structure have been investigated<br />
for the purpose of this work and the typical cells have<br />
no symmetry but many atoms, a low-symmetry special<br />
k-point sampling scheme would require a prohibitively high<br />
numerical effort. The Brillouin zone was thus sampled at the<br />
� k point corresponding to the cell of dimensions as close as<br />
possible to the dimensions of the Pr 2O 3 2�2�1 cell<br />
�orthorombic with dimensions 1.08�1.73�1.30 nm 3 �. Tests<br />
with more converged samplings indicate that although more<br />
exact calculations are needed to confirm the quantitative results,<br />
the qualitative picture presented here is valid.<br />
III. RESULTS AND DISCUSSION<br />
A. XPS study of film formation<br />
The results of the in situ XPS study at the various film<br />
preparation steps are presented in Fig. 1.<br />
The SiO 2/Si�100� substrate exhibits Si 2p emission �Fig.<br />
1�a�� from bulk Si and from SiO 2 located at 99.3 and<br />
103.3 eV, respectively. The corresponding O 1s spectrum<br />
�Fig. 1�b�� shows a single emission peak at 533.3 eV which<br />
is typical for SiO 2. 19<br />
After deposition of about 2 nm metallic Pr, both the Si<br />
bulk and the small oxide related Si 2p peak �Fig. 1�a�� move<br />
towards higher binding energy by nearly the same amount<br />
FIG. 1. XPS Si 2p �a�, O 1s �b�, and Pr 3d �c� spectra during Pr silicate film<br />
preparation. Labels indicate preparation steps.<br />
��0.3 eV�. The direction of this shift is consistent with<br />
downward band bending in the Si substrate and the presence<br />
of a dipole over the dielectric, probably induced by charge<br />
transfer from the Pr layer to the Si substrate in the process of<br />
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114109-3 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
Fermi level equilibration. 20 Furthermore, an additional component<br />
centered at 98.2 eV appears �arrow�. Its position at<br />
lower binding energy than the Si bulk signal suggests that Pr<br />
silicide is formed. 21 The O 1s emission �Fig. 1�b�� exhibits a<br />
broad feature, resulting from the overlap of Pr 2O 3, Pr silicate<br />
and SiO 2 peaks centered at 530.1, 531.9, and 533.1 eV, respectively.<br />
This broadening proves that the metallic Pr layer<br />
is not stable on SiO 2 at RT. 21 The SiO 2 layer is partially<br />
reduced by Pr and the reaction products are Pr oxide, Pr<br />
silicate and Pr silicide. The Pr 3d spectrum shows a complex<br />
emission pattern characteristic of rare-earth elements. Due to<br />
initial- and final state hybridization effects, it is difficult to<br />
assign chemical states to the features observed in the XPS Pr<br />
3d lines. 22,23 Despite this, some insight can be gained by<br />
comparing the shape of the Pr 3d emission at the various<br />
preparation steps. After Pr deposition, the Pr 3d 5/2 and 3d 3/2<br />
spin-orbit components are located at 932.5 and 952.8 eV,<br />
respectively. These values and the observed spectrum shape<br />
are in good agreement with those reported for pure Pr. 24 The<br />
Pr 3d spectrum reflects only the metallic part of the deposited<br />
Pr layer because the high binding energy of this core<br />
level results in such a low kinetic energy of the emitted photoelectrons<br />
that only the film surface is probed.<br />
After air exposure, there is no evidence of Pr–Si bonds<br />
in the Si 2p emission range anymore �Fig. 1�a��. This proves<br />
the thermodynamic instability of Pr silicides in oxygen-rich<br />
environments. Furthermore, the bulk Si peak shifts to its<br />
original clean substrate position showing that band bending,<br />
introduced in the system by Pr deposition, is reduced during<br />
the oxidation process. Such a reversibility of the Si substrate<br />
core level peak positions was reported before and associated<br />
with the change of the topmost layer of the stack from a<br />
metallic source of electrons to an electrically inactive insulator<br />
as the deposited overlayer is oxidized. 21 The Si oxide<br />
related peak gains intensity and appears at 101.9 eV. This is<br />
an intermediate value with respect to bulk Si �99.3 eV� and<br />
SiO 2 �103.3 eV�, indicating the formation of a Pr silicate<br />
compound. 19 It can therefore be concluded that at least part<br />
of the Pr atoms have intermixed with SiO 2. 22 The O 1s main<br />
peak �Fig. 1�b�� is observed at 531.4 eV, consistent with Pr<br />
silicate being the dominant specie in the dielectric. A shoulder<br />
structure at 530 eV points to the presence of Pr 2O 3. In<br />
the corresponding Pr 3d spectrum �Fig. 1�c�� the Pr 3d 5/2 and<br />
3d 3/2 lines appear at 933.6 and 954.0 eV, respectively. In<br />
addition, satellite structures on the lower binding energy side<br />
of the main peaks show up, producing an emission pattern<br />
typical for Pr oxides. 24 The fact that the surface sensitive Pr<br />
3d spectrum reports only Pr oxide and no Pr silicate formation<br />
shows that the oxide is situated on top of the Pr silicate.<br />
After N 2 annealing, the Si 2p substrate emission peak<br />
�Fig. 1�a�� undergoes a shift by about 0.4 eV towards higher<br />
binding energy �99.7 eV�. This downward bend of the energy<br />
bands in the silicon at the dielectric/Si interface is associated<br />
with an accumulation of negative charge in the silicon<br />
in the interface region. If this charge is compensated by<br />
positive charge in the film, an electrical field must exist in<br />
the dielectric. Such a potential drop over the dielectric is<br />
observed in CV measurements described in one of the following<br />
sections and is at most of the order of 0.2 eV. As the<br />
118 A n n u A l R e p o R t 2 0 0 6<br />
FIG. 2. SR-XPS Si 2p �a� and O 1s �b� photoelectron lines of the Pr silicate<br />
film. Labels indicate incident photon energies.<br />
Si 2p silicate component �Fig. 1�a�� is found to shift during<br />
N 2 annealing by more than 0.2 eV, namely, by about 1 eV<br />
towards higher binding energy �102.9 eV�, it is safe to attribute<br />
this Si 2p silicate line position change mostly to a<br />
modified Pr silicate stoichiometry. 25 In addition, the rather<br />
broad full width at half maximum �FWHM� of the peak<br />
��2.4 eV� suggests contributions from various silicate-type<br />
compounds.<br />
The change in the Pr silicate stoichiometry during N 2<br />
annealing is also reflected in the shape of the O 1s spectrum.<br />
The O 1s spectrum �Fig. 1�b�� is dominated by a Pr silicate<br />
peak at 531.6 eV. 19 The formerly observed Pr 2O 3 peak<br />
�530 eV� has disappeared and a shoulder on the higher binding<br />
energy side of the main peak shows up. The latter feature<br />
at 533 eV indicates the growth of an SiO 2-rich Pr silicate<br />
compound during the thermal N 2 treatment �discussed in<br />
more detail in the nondestructive depth profiling SR-XPS<br />
study below�. The shape of the Pr 3d core level emission<br />
�Fig. 1�c�� does not significantly change after N 2 annealing<br />
but the main peaks shift toward higher binding energy by<br />
�0.9 eV. Again, this shift exceeds the potential in the<br />
dielectric ��0.2 eV� after N 2 annealing. The Pr 3d peak<br />
position change must therefore mainly result from a modified<br />
chemical environment of the Pr atoms on the surface of the<br />
dielectric layer. In fact, the shift direction is consistent with<br />
Pr silicate formation, a conclusion supported by simple<br />
electronegativity arguments. 26 The electronegativities of Pr,<br />
Si, and O on the Pauling scale are 1.1, 1.9, and 3.4,<br />
respectively. 27 Thus, Pr–O–Pr bonds are substantially more<br />
ionic than Si–O–Si bonds. If these two units are intermixed<br />
�Pr–O–Si�, the relative covalency of Si makes Pr in Pr xSi yO z<br />
even more ionic than in bulk Pr mO n. As a result, the XPS<br />
binding energy of Pr in Pr xSi yO z is larger than in Pr mO n. This<br />
trend is consistent with observations of core level shifts in<br />
other silicate alloys. 28<br />
B. SR-XPS depth profiling study<br />
Figure 2 summarizes the SR-XPS data obtained for prepared<br />
Pr silicate dielectrics on Si�100�.<br />
The Si 2p spectrum �Fig. 2�a�� taken at the substrate<br />
sensitive excitation of 1100 eV shows the Si substrate spin-<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
114109-4 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
orbit doublet with its maximum at 99.4 eV. This signal is<br />
accompanied by the broad Pr silicate feature at 102 eV. The<br />
observed line shape is best fitted by assuming the presence a<br />
SiO 2-rich ��103 eV� and a SiO 2-poor ��102 eV� silicate<br />
phase in the dielectric layer. The peak of the SiO 2-rich Pr<br />
silicate phase is visible as a shoulder structure in the spectrum<br />
excited at E=1100 eV, but its intensity is strongly decreased<br />
in the surface sensitive mode �E=350 eV�. This behavior<br />
clearly demonstrates that the SiO 2-rich Pr silicate<br />
phase is situated close to the Si substrate interface. At<br />
E=350 eV, no Si substrate peak is observed anymore. The<br />
spectrum is dominated by the Si 2p core level at 102.6 eV,<br />
indicative of the SiO 2-poor silicate phase. Furthermore, by<br />
measuring the photoelectron line position as a function of the<br />
excitation energy, SR-XPS allows to study potential gradients<br />
in the dielectric/Si system in more detail. For example,<br />
the Si 2p bulk peak shifts towards higher binding energy<br />
by 0.4 eV, as the excitation energy is varied from<br />
1100 to 600 eV. As already discussed above, this demonstrates<br />
downward band bending in the Si substrate. The resulting<br />
potential difference across the Pr silicate dielectric is<br />
detected in SR-XPS by the gradual shift of the Si 2p silicate<br />
peak towards higher binding energy ��0.4 eV� as a function<br />
of decreasing excitation energy.<br />
It is interesting to note that the potential difference<br />
across the dielectric film is determined below in the CV<br />
study and amounts to at most 0.2 eV. The higher Si 2p silicate<br />
line position variation in SR-XPS results probably from<br />
chemical contributions, i.e., the presence of a compositionally<br />
graded silicate layer.<br />
The corresponding O 1s spectra are displayed in Fig.<br />
2�b�. At E=1100 eV, the main feature is centered at<br />
531.6 eV proving the presence of Pr–O–Si bonds. A shoulder<br />
at the high binding energy side ��533 eV� is also clearly<br />
visible. In accordance with the Si 2p data, we assign it to the<br />
SiO 2-rich silicate at the interface. Changing E 0 from<br />
1100 to 600 eV decreases the intensity of the latter feature<br />
with respect to the main Pr silicate line. However, it is still<br />
present in the most surface sensitive mode. This implies that<br />
the shoulder structure of the O 1s peak is not only caused by<br />
the SiO 2-rich Pr silicate interface layer but also by OH species<br />
at the surface. 24 For completeness, it is noted that both<br />
O 1s lines follow the trend observed for the Si 2p lines and<br />
shift towards higher binding energy by �0.35 eV, when E 0<br />
is varied from 1100 to 600 eV.<br />
C. TEM analysis<br />
The cross-section TEM image �Fig. 3� confirms the bilayer<br />
structure of the dielectric deduced from SR-XPS. Three<br />
regions can be distinguished over the Si�100� substrate. The<br />
1.7-nm-thick bright bottom layer with a smooth interface to<br />
Si is, given the photoemission results, attributed to the<br />
SiO 2-rich Pr silicate compound. The darker film region with<br />
a thickness of about 3.5 nm represents the SiO 2-poor Pr silicate<br />
layer. The bright layer on top is glue used for TEM<br />
sample preparation. Note that no lattice fringes are observed<br />
in the Pr silicate region indicating an amorphous character of<br />
FIG. 3. Cross-section TEM image of a Pr silicate film on Si�100�.<br />
the dielectric. As recently demonstrated by combined x-ray<br />
diffraction �XRD� and XPS studies, Pr silicate films on<br />
Si�100� remain amorphous up to 900 °C. 29<br />
D. Electronic structure<br />
Any dielectric discussed as post-SiO 2 gate oxide must<br />
exhibit valence and conduction band offsets of at least 1 eV<br />
with respect to Si to fulfill the important requirement of low<br />
leakage current. 30<br />
The valence band �VB� offset can be directly derived<br />
from photoemission measurements. 31 Figure 4�a� displays<br />
SR-XPS VB spectra of the hydrogen terminated Si�100� substrate<br />
and of the Pr silicate/Si�100� system measured both<br />
with an excitation energy of 350 eV. The VB spectrum of<br />
pure Si�100�, described in detail elsewhere, 32 acts here as<br />
reference to determine the position of the Si VB maximum.<br />
As indicated in Fig. 4, this value is derived from the measurement<br />
by determining the point where the tangent of the<br />
VB edge crosses the energy axes. In this way, it is found that<br />
the VB maximum of the Pr silicate dielectric is displaced by<br />
about 2.9 eV towards higher binding energy with respect to<br />
Si. This value of the VB offset is reasonable, as it is placed<br />
between the experimentally determined VB offsets of the<br />
Pr 2O 3/Si�100� �1.1 eV� �Ref. 33� and SiO 2/Si�100� �4.4 eV�<br />
�Ref. 34� system. It was recently reported in the literature<br />
that the VB offset of �ZrO 2� x�SiO 2� 1−x silicates with respect<br />
to Si varies as a function of composition �x ranging from 0 to<br />
1� between the limiting values of the components SiO 2 and<br />
ZrO 2. 35 Pr silicate layers probably follow the same trend, an<br />
assumption supported by a previous in situ VB study of the<br />
solid state reaction between Pr and SiO 2/Si�111�. 21 These<br />
authors demonstrate the evolution of the Pr 4f peak structure<br />
as a function of Pr coverage right above the VB maximum of<br />
SiO 2. In this way, the VB offset with respect to Si is reduced.<br />
In the VB spectrum of the Pr silicate film �Fig. 4� emission<br />
from Pr 4f states is responsible for the main peak at 4.7 eV.<br />
Towards lower binding energies, three further shoulders are<br />
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A n n u A l R e p o R t 2 0 0 6<br />
119
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
114109-5 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
FIG. 4. �a� VB spectra of pure Si and the Pr silicate film, �b� O 1s energyloss<br />
feature of the SiO 2 reference sample and the Pr silicate film.<br />
visible at 7.1, 9, and 11.2 eV. The position and shape of the<br />
shoulder at 11.2 eV is very similar to the O 2p–Si 3s, 3p<br />
valence band region of SiO 2, indicating that the character of<br />
Si–O bonds does not substantially change in the Pr-silicate<br />
film. This result is supported by the fact that electropositve<br />
metal atoms in silica are known to create their specific oxygen<br />
coordination polyhedra by strong interaction with the<br />
more delocalized nonbonding O 2p orbitals of the Si–O<br />
bonds. 36 Emission from nonbonding O 2p orbitals results in<br />
VB spectra of clean SiO 2 in a broad unstructured peak in the<br />
binding energy region from about 6 to 10 eV. Clearly, this<br />
featureless VB region of SiO 2 is replaced in the Pr-silicate<br />
film by an emission signal characterized by two shoulders<br />
�7.1 and 9 eV�. It is interesting to note that such a two peak<br />
structure was observed in the VB spectrum of cubic Y 2O 3, a<br />
compound isomorphic with Pr 2O 3. Based on semiempirical<br />
tight binding calculations, the main peak at 7.1 eV was attributed<br />
to O 2p VB orbitals in a pure or distorted tetrahedral<br />
cation environment and the existence of direct hopping terms<br />
between neighboring oxygen atoms was invoked to account<br />
for the weaker shoulder at 9 eV. This similarity suggests that<br />
Pr atoms in Pr-silicate films locally create the same oxygen<br />
coordination polyhedron, as encountered in the bulk oxide<br />
compounds. 37,38 However, this preliminary interpretation of<br />
the Pr-silicate VB spectrum needs further corroboration by<br />
experimental and theoretical studies, as photoemission spectra<br />
of Pr compounds are known to be complicated by hybridization<br />
effects between Pr 4f and O 2p states. 23<br />
The conduction band �CB� offset between Pr silicate and<br />
Si�100� is deduced in the following. Photoelectron scattering<br />
by creation of electron-hole pairs often allows to estimate<br />
indirectly the band gap of insulators by XPS studies. 39,40 In<br />
120 A n n u A l R e p o R t 2 0 0 6<br />
FIG. 5. Schematic illustration of band offset energies of SiO 2 and Pr silicate<br />
with respect to Si.<br />
this procedure, the energy difference between the position of<br />
the photoelectron peak and the onset of the corresponding<br />
loss peak structure on its high binding energy side is taken as<br />
a fingerprint of the insulator band gap. This is illustrated in<br />
Fig. 4�b� using the O 1s loss region of the SiO 2 and the Pr<br />
silicate film. In case of the 2-nm-thick SiO 2/Si�100� reference<br />
sample, a band gap of 8.1 eV is obtained. This result<br />
shows that the method tends to underestimate the real band<br />
gap of about 8.9 eV whenever competing scattering processes<br />
of lower energy occur. The same trend could be responsible<br />
for the fact that the here deduced band gap of<br />
5.6 eV of the Pr silicate film is by about 0.9 eV smaller than<br />
the value recently reported for Pr silicate films on Si�111�. 41<br />
However, this discrepancy of the reported band gap values<br />
could also result from different Pr silicate film stoichiometries.<br />
Hofmann et al. prepared Pr silicate films on Si�111� by<br />
solid state reaction between Pr and SiO 2/Si�100� using a<br />
metal/oxide ratio similar to our study. 21 A Pr silicate band<br />
gap of about 5.5 eV can be deduced from their combined<br />
ultraviolet photoemission spectroscopy �UPS� -inverse photoemission<br />
electron spectroscopy �IPES� study which is close<br />
to the value of our study. This is a reasonable value because<br />
it is intermediate between the band gaps found for Pr 2O 3<br />
�3.9 eV, 33 5.2 eV �Ref. 42�� and SiO 2 �9 eV�. 34 Furthermore,<br />
the reported band gaps of rare-earth silicates generally range<br />
from 4 to 6 eV. 43 Relying that way on the band gap measurement,<br />
we deduce a CB offset of 1.6 eV by subtracting<br />
from the Pr-silicate band gap of 5.6 eV the Si band gap<br />
�1.1 eV� and the value of the above determined VB offset<br />
�2.9 eV�. A scheme of the band discontinuities at the Pr<br />
silicate/Si interface is drawn in Fig. 5 and the band offsets of<br />
the SiO 2/Si system are included for comparison. 34 It is<br />
clearly seen that Pr silicate layers on Si are characterized by<br />
�a� substantially lower band offsets than SiO 2 films and that<br />
�b� the band offsets are quite asymmetric, namely, 1.6 eV for<br />
electrons and 2.9 eV for holes. Both statements are true for<br />
many high-k oxides because �a� the band gap is roughly inversely<br />
proportional to the dielectric constant and �b� the VB<br />
offset is almost uniquely determined by the position of the<br />
oxide O 2p orbitals but the CB offset is a strong function of<br />
the metal wave functions which constitute the CB edge. 44<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
114109-6 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
FIG. 6. JV characteristics of the SiO xN y reference sample and the Pr silicate<br />
dielectric both with EOT=1.8 nm.<br />
E. Electrical characterization<br />
The photoemission study on the Pr silicate/Si�100� system<br />
gives thus evidence for band discontinuities at the<br />
dielectric/Si interface high enough to act as effective charge<br />
injection barriers. This important insight is corroborated by<br />
JV measurements displayed in Fig. 6. The JV curve for nitrided<br />
SiO 2 serves as reference. The Pr silicate and nitrided<br />
SiO 2 films have the same EOT of about 1.8 nm to allow a<br />
direct comparison. In the depletion region of the MOS capacitor<br />
�negative gate bias�, the JV curves show behavior<br />
typical of a reverse biased p-n junction. 45 Here, the current<br />
flowing through the MOS structure is limited by the reverse<br />
biased p + -n junction induced by the electric field under the<br />
gate oxide. The magnitude of the reverse current is governed<br />
mainly by the minority carrier generation in bulk Si.<br />
In the accumulation regime �positive gate bias�, the JV<br />
curve is determined by various current conduction mechanisms<br />
through the dielectric layer and provides a measure of<br />
the gate dielectric quality. 4 It is seen that the leakage current<br />
across the Pr silicate is significantly lower than that across<br />
the SiO xN y reference layer. For example, the leakage current<br />
measured at +1 V above the flatband voltage �V FB� is of the<br />
order of 5�10 −5 A/cm 2 which is about three orders of magnitude<br />
lower than in case of the high-quality nitrided SiO 2<br />
layer.<br />
Insight into the conduction mechanism involved is<br />
gained from analysis of the JV curve in the accumulation<br />
region. The measured linear relation of the logarithm of the<br />
leakage current density versus the square root of the applied<br />
electric field �inset in Fig. 6� points either to Schottky �S� or<br />
Poole-Frenkel �PF� emission. 45 The current density in the<br />
Schottky model is given by<br />
J = A * T 2 exp� � SE 1/2 − � S<br />
k BT �, �1�<br />
where � S=�e 3 /4�� 0�� 1/2 , A * is the effective Richardson constant,<br />
T is temperature, � S is the potential barrier between the<br />
Si substrate and dielectric layer conduction band, k B is the<br />
FIG. 7. CV curve of the Pr silicate dielectric on Si�100�.<br />
Bolzmann constant, e is the electronic charge, E is the applied<br />
electric field, � 0 is the dielectric constant of free space,<br />
and � is the high frequency dielectric constant.<br />
In the Poole-Frenkel model, the corresponding relationship<br />
is given by<br />
J = J 0 exp� � PFE 1/2 − � PF<br />
k BT �, �2�<br />
where � PF=�e 3 /�� 0�� 1/2 , J 0 is the low-field current density,<br />
and � PF the depth of the trap potential well.<br />
The fact that the quantity � PF is larger than � S by<br />
a factor of two allows to discriminate between S and<br />
PF processes by determining the slope of the ln J−E 1/2<br />
plot. The experimental value of � obtained equals<br />
1.35�10 −4 �cm eV� 1/2 . This is clearly closer to the theoretical<br />
value of � S=1.8�10 −4 �cm eV� 1/2 than to the theoretical<br />
value of � PF=3.6�10 −4 �cm eV� 1/2 pointing to the Schottky<br />
emission as the main conduction mechanism. The potential<br />
barrier height � S is estimated form the ordinate value at<br />
E=0. A height of �1.4 eV is found which is in line with the<br />
CB offset determined above by photoemission.<br />
Figure 7 shows the CV characteristics of the Pr silicate<br />
dielectric on Si�100�. A primary interesting point concerns<br />
the overall shape of the measured CV curve. From the fact<br />
that it is not streched out, a good interface quality between<br />
the Pr silicate dielectric layer and the Si�100� substrate can<br />
be deduced. A quantitative fit by the QITFIT software tool<br />
results in an interface state density �D it� of the order of<br />
10 11 cm −2 . Secondly, interesting insights can be gained from<br />
the measured capacitance in accumulation. From this value,<br />
an EOT of around 1.8 nm is extracted. By using the total<br />
physical thickness of the dielectric stack, the same capacitance<br />
value allows to calculate the effective dielectric constant<br />
which is on the order of 11. Certainly, the effective k<br />
value is strongly limited by the presence of the SiO 2-rich Pr<br />
silicate layer of lower dielectric constant close to the Si substrate.<br />
To extract the dielectric constant of the latter layer, a<br />
simple model of two capacitors in series is assumed. The<br />
interface SiO 2-rich Pr silicate layer and the SiO 2-poor Pr<br />
silicate layer on top of it are modeled by the permittivities k 1<br />
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A n n u A l R e p o R t 2 0 0 6<br />
121
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
114109-7 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
and k 2, respectively. The inset in Fig. 7 shows possible combinations<br />
of k 1 and k 2 to reproduce the measured effective k<br />
value of 11. Using the reported dielectric constant k 2 of<br />
�19.7 for the SiO 2-poor Pr silicate, 41 a k 1 value of �5.7 is<br />
deduced. As this value is higher than the dielectric constant<br />
of SiO 2 �k=3.9�, the electrical measurement is in line with<br />
the SR-XPS study and provides support for the formation of<br />
a SiO 2-rich Pr silicate layer at the interface. Thirdly, the flatband<br />
voltage shift of the measured CV curve corroborates the<br />
presence of a potential difference across the Pr silicate layer<br />
of about 0.2 eV detected above by SR-XPS. For this purpose,<br />
the data of the Au/Pr silicate/Si system is compared<br />
with a simulated CV curve of a Au/SiO 2/Si MOS structure.<br />
In the simulation of the latter, an ideal SiO 2 layer �no fixed<br />
charge, interface dipoles, etc.� and the same Si substrate doping<br />
concentration as in our Pr silicate study was applied.<br />
Under the reasonable assumption that the work function of<br />
the Au top electrode on Pr silicate is the same as on SiO 2, the<br />
measured and simulated CV curves are expected to coincide<br />
for the case of an ideal Pr silcate film. However, Fig. 7<br />
clearly shows that the flatband voltage of the Au/Pr xSi yO z/Si<br />
system is shifted with respect to the Au/SiO 2/Si structure by<br />
�0.22 V towards negative voltage. It is important to note<br />
that magnitude and direction of this flatband voltage shift<br />
correlate well with the potential gradient across the Pr silicate<br />
dielectric layer detected by SR-XPS. Clearly, a possible<br />
microscopic origin of these experimental findings is the presence<br />
of positive fixed charge in the Pr silicate layer. However,<br />
as pointed out in more detail in the next section, the<br />
physics of electrically active defect sites in the Pr silicate/Si<br />
system is more complicated and further contributing factors<br />
can not be ruled out at present.<br />
F. Ab initio calculations<br />
In order to understand the origin of the positive charge in<br />
the silicate films, we have analyzed the formation and the<br />
electrical properties of various point defects in Pr silicates.<br />
The details of this calculations will be given elsewhere; 46<br />
here we summarize the main ideas and results sketching the<br />
most probable scenarios of fixed charge formation.<br />
Pr silicate can be regarded as a mixture<br />
n�Pr 2O 3�m�SiO 2� with Si–O–Si, Pr–O–Si, and Pr–O–Pr<br />
bonds. To describe theoretically point defect formation in<br />
these bonding configurations, we use SiO 2 �n=0�, G-type<br />
Pr 2Si 2O 7 �m=2n� �Ref. 47�, and cubic Pr 2O 3 �m=0� as<br />
model substances, respectively. The current discussion of<br />
nonstoichiometric silicate is based solely on the dependence<br />
of point defect formation energies on the chemical potential<br />
of oxygen, ��O�. The coexistence of various stoichiometries<br />
of the Pr silicate in our system indicates that during the silicate<br />
formation at high temperature the chemical potential<br />
��O� is situated between the equilibrium of stoichiometric<br />
Pr 2Si 2O 7 and SiO 2 and the equilibrium of stoichiometric<br />
Pr 2Si 2O 7 and Pr 2O 3. We assume that this range of ��O�<br />
roughly reflects the change of ��O� over the composition of<br />
our Pr silicate system.<br />
122 A n n u A l R e p o R t 2 0 0 6<br />
In most of this range, it is found that the formation en-<br />
3+<br />
ergy of Pr interstitial PrI is negative: it varies from about<br />
−1.5 eV at the Pr oxide end to about +0.5 eV at the Si oxide<br />
3+<br />
end. A negative PrI formation energy means that it is energetically<br />
more favorable to dissolve some Pr atoms as triple<br />
positively charged interstitials in the silicate. In other words,<br />
the silicate may be enriched in SiO2 by the oxidation of Si<br />
whereby the required oxygen not only stems from the ambient<br />
but to certain extent also from the reduction of Pr2O3 moieties in the Pr silicate. This is described by the following<br />
relationship<br />
2Pr 2Si 2O 7 + 3Si → 2Pr I 3+ + Pr2Si 2O 7:SiO 2, �3�<br />
where Pr2Si2O7:SiO2 stands for Pr2Si2O7 slightly enriched<br />
in SiO2. As the silicate composition changes towards the<br />
SiO2 end, the energy gain from Pr2O3 reduction decreases<br />
and eventually changes sign to become a loss of 0.5 eV at<br />
the SiO2 limit. Over the same range of ��O�, the formation<br />
2+<br />
energies of oxygen vacancies OV and valence alternated �un-<br />
+<br />
deroxidized� Pr atoms PrVA are small �around +0.5 eV� in<br />
Pr2O3. The latter defect corresponds formally to a half oxygen<br />
vacancy. One would expect a comparable energy cost<br />
when an oxygen deficiency defect is created at a Pr-rich site<br />
in the network of the silicate, that is, at a site where the<br />
removal of the oxygen atom does not break any covalent<br />
bonds with Si.<br />
3+ 2+ +<br />
Can some of these defects �PrI , OV , PrVA�<br />
be responsible<br />
for the positive fixed charge detected by photoemission<br />
3+<br />
and CV studies in our Pr silicate film? The energy of PrI decreases �by approximately 0.2 eV� when the defect moves<br />
from Pr2Si2O7 to Pr2O3. Therefore, one expects that Pr interstitials<br />
created during mixing diffuse away across the Pr oxide<br />
to the surface of the film, where they are oxidized by<br />
oxygen from the ambient. The oxygen vacancies are expected<br />
to become eventually filled by oxygen as the ultrathin<br />
film interacts with oxygen from the ambient. But underoxi-<br />
+<br />
dized praseodymium, PrVA, may survive because in order to<br />
become oxidized, such defects would need to pair into oxy-<br />
+<br />
gen vacancies. Therefore, we suspect that PrVA in<br />
Pr2O3—rich Pr silicates may be responsible for the positive<br />
charge observed in the films. Another possibility that is<br />
pointed to by the results of our calculations is that the positive<br />
charge is trapped in the Si-rich region of the Pr silicate<br />
in form of over-coordinated oxygen atoms. This model will<br />
be discussed in detail in a separate publication. 46<br />
IV. CONCLUSIONS<br />
We demonstrated that the solid state reaction of Pr with<br />
native SiO 2 layers on Si�100� can be tailored to prepare compositionally<br />
graded Pr silicate dielectrics with good interface<br />
properties, low leakage currents, and appropriate k values.<br />
These results along with the reported good thermal stability<br />
against crystallization and phase separation make Pr silicate<br />
films attractive for high-k applications. 29 Further work is under<br />
way to optimize the system �i.e., achieve EOT values<br />
below 1 nm �Ref. 48�� and integrate the alternative high-k<br />
dielectric in conventional complementary metal-oxide semiconductor<br />
�CMOS� process technology. 49,50<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
114109-8 Lupina et al. J. Appl. Phys. 99, 114109 �<strong>2006</strong>�<br />
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E. J. Nowak, IBM J. Res. Dev. 46, 169 �2002�.<br />
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E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H.<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Residual stress in Si nanocrystals embedded in a SiO 2 matrix<br />
T. Arguirov, a� T. Mchedlidze, and M. Kittler<br />
<strong>IHP</strong>, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany and <strong>IHP</strong>/BTU Joint Lab,<br />
Konrad Wachsmann Allee 1, D-03046 Cottbus, Germany<br />
R. Rölver, B. Berghoff, M. Först, and B. Spangenberg<br />
Institute of Semiconductor Electronics, RWTH Aachen University, D-52074 Aachen, Germany<br />
�Received 23 March <strong>2006</strong>; accepted 13 June <strong>2006</strong>; published online 2 August <strong>2006</strong>�<br />
Multiple quantum wells consisting of alternating Si and SiO 2 layers were studied by means of<br />
Raman scattering. The structures were fabricated by the remote plasma enhanced chemical vapor<br />
deposition of amorphous Si and SiO 2 layers on quartz substrate. The structures were subjected to a<br />
rapid thermal annealing procedure for Si crystallization. The obtained results suggest that the Si<br />
layers consist of nanocrystals embedded in an amorphous Si phase. It was found that the silicon<br />
nanocrystals inside 2 nm thin layers are under high residual compressive stress. Moreover, the<br />
metastable Si III phase was detected in these samples supporting the presence of large compressive<br />
stresses in the structures. The compressive stress could be relaxed upon local laser annealing.<br />
© <strong>2006</strong> American Institute of Physics. �DOI: 10.1063/1.2260825�<br />
Multiple quantum wells �MQWs� consisting of alternating<br />
Si and SiO 2 layers attract considerable interest due to<br />
their luminescent properties and possibilities of band gap<br />
adjustment, related mainly to carrier confinement effects. 1<br />
The MQW structures are fabricated by deposition of alternating<br />
amorphous silicon �a-Si� and silicon dioxide �SiO 2� layers.<br />
An appropriate heat treatment is applied after deposition<br />
for recrystallization of a-Si. The amorphous-to-crystalline<br />
phase transition in MQWs occurs through random nucleation<br />
of crystalline Si �c-Si� clusters surrounded by a-Si and is<br />
influenced by stress fields existing in the system. It was reported<br />
that nucleation of c-Si is suppressed near the Si/SiO 2<br />
interface in the adjacent 0.5–1.0 nm of the Si layer. 2 A careful<br />
analysis of the crystallization process was presented in<br />
Ref. 3, where the authors showed that the major factor restricting<br />
the crystallization of the nanolayers is the strain<br />
exerted by the SiO 2 to the Si layers due to the lattice mismatch<br />
of the materials. The screening distance after which<br />
the c-Si nucleation centers in the a-Si phase are not influenced<br />
by the Si/SiO 2 interface was estimated to be about<br />
2.5 nm. Consequently, an equilibriumlike furnace annealing<br />
will not allow a complete crystallization of Si nanolayers<br />
with thicknesses less than 5 nm due to the influence of the<br />
interfaces. The rapid thermal annealing �RTA� procedure<br />
should allow heating of the a-Si nanolayers directly. Therefore,<br />
proper adjustment of the RTA procedure may minimize<br />
influence of interfaces. However, compressive stress during<br />
RTA can be generated in the layers due to difference in the<br />
expansion coefficients of Si and SiO 2, and this stress may<br />
influence the crystallization. The aim of the present work<br />
was an investigation of stresses in the MQW samples during<br />
RTA procedure.<br />
Stacks consisting of ten periods of Si/SiO 2 layers were<br />
deposited on quartz substrates by remote plasma enhanced<br />
chemical vapor deposition. 4 The thickness of a-Si layers was<br />
varied in the range from 2 to 5 nm, and the thickness of<br />
SiO 2 layers was kept at 3 nm for all MQW samples. The<br />
RTA procedure was carried out at 1100 °C for 30 s. For<br />
a� Electronic mail: arguirov@tu-cottbus.de<br />
124 A n n u A l R e p o R t 2 0 0 6<br />
APPLIED PHYSICS LETTERS 89, 053111 �<strong>2006</strong>�<br />
better heat absorption, the side of the samples with deposited<br />
layers was brought in thermal contact with a silicon wafer<br />
during the RTA process. The heating of the structures is then<br />
caused by light directly absorbed in the layers and by the<br />
heat exchange between the silicon wafer and the sample. An<br />
additional annealing step at 400 °C in forming gas was conducted<br />
to further improve the interface quality and for hydrogen<br />
passivation of the defects. The MQW samples were<br />
analyzed by micro-Raman measurements on a Dilor XY<br />
triple spectrometer equipped with frequency doubled<br />
Nd:YVO 4 laser �Coherent Verdi� at a wavelength of<br />
532 nm. The illuminated spot was 1 �m in diameter, and the<br />
power of the laser during the measurements was kept below<br />
4 mW to avoid unintentional heating of the structures. The<br />
absolute positions of the Raman peaks were determined by<br />
comparison with the spectrum of a Hg calibration lamp. To<br />
investigate an influence of local annealing by laser beam,<br />
single spot on the sample surface with 2 nm thick a-Si layers<br />
was subjected to illumination by the probe beam using high<br />
laser powers.<br />
All MQW samples showed blueshifted band edge photoluminescence,<br />
which can be attributed to quantum confinement<br />
of charge carriers in nanocrystalline Si �nc-Si�. 4 The<br />
Raman spectra in Fig. 1 show that all measured samples<br />
contain a-Si and nc-Si fractions. The scattering from amorphous<br />
material has a maximum at about 480 cm −1 and can be<br />
deconvoluted in three broad peaks 5 �Fig. 1, inset�. The sharp,<br />
asymmetric peak at higher wavenumbers is associated with<br />
nc-Si. Changes in the shape of the spectra with the changes<br />
in the Si layer thickness are mainly related to the contribution<br />
of nc-Si phase. It is not possible to determine exactly a<br />
value of crystallinity, i.e., the absolute volume fraction of<br />
nc-Si and a-Si in the layers, because the Raman scattering<br />
cross section for nc-Si is strongly dependent on the size of<br />
the nanocrystals. 6 As a rough estimate for this value, one can<br />
use a ratio of integrated intensities for signals related to nc-Si<br />
and a-Si. We obtained crystallinity of �5% for the 2 nm<br />
thick layers and �25% for the 5 nm thick layers. A comparison<br />
between the volume fraction estimated from transmission<br />
electron microscopy images and that obtained from the<br />
0003-6951/<strong>2006</strong>/89�5�/053111/3/$23.00 89, 053111-1<br />
© <strong>2006</strong> American Institute of Physics<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
053111-2 Arguirov et al. Appl. Phys. Lett. 89, 053111 �<strong>2006</strong>�<br />
FIG. 1. Raman spectra from MQW samples, thickness of Si layers is indicated<br />
on the related curves. The position of Raman peak in bulk Si is<br />
indicated by a doted line c-Si. The inset shows fitting of the experimental<br />
spectra with three peaks related to the amorphous material and the residual<br />
peak related to nc-Si.<br />
Raman results on similar samples showed that latter gives an<br />
overestimation of the volume fraction within �10%.<br />
Figure 2 compares the dependencies of positions and of<br />
widths of nc-Si Raman peaks on the layer thickness with the<br />
results of the calculations. 7,8 The peak width �full width at<br />
half maximum �FWHM�� follows the theoretical predictions<br />
quite well. The asymmetry of the nc-Si peak �Fig. 1, inset�<br />
can originate from scatter in the sizes of the nanocrystals<br />
and/or from the variation of their residual stress. Since the<br />
dependence of the FWHM corresponds well to that predicted<br />
theoretically, we suppose that the main source of asymmetry<br />
is homogeneous broadening. Contrary to the theoretical<br />
predictions, 7,8 a shift to higher Raman frequencies in the<br />
peak position was observed upon decreasing the layer thickness.<br />
Similar results were reported previously. 9 It was<br />
shown 10 that the width of the Si Raman peak is barely influenced<br />
by compressive stress, although the position of the<br />
FIG. 2. Symbols represent the experimental data for the position shift �a�<br />
and FWHM �b� of the nc-Si related peak. The peak shift is given relative to<br />
the position of the crystalline bulk Si material. The model calculations are<br />
presented by dashed �Ref. 7� and dotted �Ref. 8� lines.<br />
FIG. 3. Change of the gap between Raman peak positions �Pos�c-Si�<br />
−Pos�nc-Si�� detected in the sample with 2 nm layers with the increase of<br />
power of the probe beam; the line serves as a guide for the eye. Inset: Si III<br />
peak detected before �solid line� and after �dotted line� laser annealing.<br />
peak maximum is strongly shifted. Therefore we attributed<br />
the observed anomalous behavior to a residual hydrostatic<br />
stress exerted from the a-Si phase on the nc-Si grains during<br />
RTA.<br />
We investigated response of the system to the laser annealing.<br />
For this, the power of the probing laser was increased<br />
stepwise at one spot from 4 to 120 mW. The exposure<br />
time was varied in order to keep the exposition constant<br />
for various laser powers. It should be noted that in contrast to<br />
the RTA, the laser annealing is a steady state process where<br />
the steady state conditions are reached within several<br />
microseconds. 11 Thus the crystallization conditions are determined<br />
mainly by the acting laser power and not by the exposure<br />
time.<br />
Figure 3 shows change of a gap between Raman peak<br />
positions �Pos�c-Si�−Pos�nc-Si�� with the increase in the applied<br />
laser power. The position of the nc-Si peak in the spectra<br />
was determined by subtracting the reference spectrum,<br />
i.e., the spectrum measured at 120 mW from all other spectra.<br />
This procedure highlighted the nc-Si peak, because the<br />
a-Si related scattering was not shifted and does not contribute<br />
to the resulting curve. As seen in Fig. 3, a shift in the<br />
Raman peak position to lower wavenumbers was observed<br />
upon increasing the laser power. After the peak reached a<br />
value of �10 cm−1 below the position for bulk c-Si, the shift<br />
leveled off. To exclude possible influence of local temperature<br />
change on the Raman shift and the peak width, 10,12,13 we<br />
measured the Raman spectrum at the low laser power at the<br />
same spot after the laser annealing. The spectral shapes at the<br />
high and the low power measurements were identical within<br />
the experimental error. This fact suggests that the change in<br />
the nc-Si peak position in our experiment is related to the<br />
stress relaxation caused by annealing and not to changes in<br />
experimental conditions.<br />
The final position for the nc-Si peak roughly corresponds<br />
to that expected for �2 nm size crystallites of relaxed<br />
nc-Si. 7,8 Then from the obtained change in the peak position<br />
caused by laser annealing ��10 cm−1� and by applying the<br />
approximation for influence of stress in c-Si, 14 the compressive<br />
stress in the initial state of nc-Si after RTA was estimated<br />
as �5 GPa.<br />
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A n n u A l R e p o R t 2 0 0 6<br />
125
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
053111-3 Arguirov et al. Appl. Phys. Lett. 89, 053111 �<strong>2006</strong>�<br />
As an additional confirmation for the presence of high<br />
compressive stresses in the system, a peak at about 180 cm −1<br />
was observed in the low energetic part of the Raman spectrum<br />
in the samples before laser annealing �Fig. 3, inset�.<br />
This peak can be related to the metastable Si III phase. 5,15<br />
The Si III phase is formed by expansion and cooling of the<br />
high-temperature, high-pressure stable metallic silicon<br />
phase—Si II �Refs. 15 and 16�—and requires compressive<br />
stresses of about 10 GPa at elevated temperatures. 16 Therefore,<br />
the presence of Si III phase confirms that the silicon<br />
was exposed to high compressive stresses during RTA. Si III<br />
is a metastable phase and transforms to Si I by relaxation of<br />
the compressive stress during annealing. Such relaxation of<br />
the Si III related peak was indeed observed in the Raman<br />
spectra upon the laser treatment. The inset in Fig. 3 shows<br />
that the peak related to the Si III phase is strongly reduced<br />
after the laser annealing. The dependence of the Raman peak<br />
position on the Si layer thickness �Fig. 2�a�� probably should<br />
be attributed to a screening of the compressive stress by<br />
a-Si material in thicker Si layers.<br />
In summary, RTA annealed MQWs showed an anomalous<br />
blueshift of nc-Si related Raman peak on decreasing of<br />
Si layer thickness. Such behavior could be ascribed to residual<br />
compressive stresses in the layers. This supposition<br />
was supported by presence of high-pressure Si III phase in<br />
the samples after RTA. Laser annealing led to redshift of<br />
126 A n n u A l R e p o R t 2 0 0 6<br />
nc-Si Raman peak and suppression of Si III related peak.<br />
This indicates relaxation of stress by local laser annealing.<br />
This work has been partly funded by the European Commission<br />
under the frame of SINANO �IST-506844� and by<br />
the BMBF, Germany �Contract 03SF0308�.<br />
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S. Kouteva-Arguirova, Tz. Arguirov, D. Wolfframm, and J. Reif, J. Appl.<br />
Phys. 94, 4946 �2003�.<br />
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N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
1.5 µm Emission from a Silicon MOS-LED Based on a Dislocation Network<br />
M. Kittler 1,2 , M. Reiche 3 , X. Yu 1,2 , T. Arguirov 1,2 , O.F. Vyvenko 2,4 , W. Seifert 1,2 ,<br />
T. Mchedlidze 2 , G. Jia 2 and T. Wilhelm 3<br />
Abstract<br />
A novel Si MOS-LED is demonstrated, which is fully<br />
compatible with Si technology. It is based on a dislocation<br />
network fabricated by wafer direct bonding. Light emission<br />
at 1.5 µm was observed when the network was near the<br />
Si/SiO 2 interface close to/inside the accumulation layer<br />
induced by the gate voltage.<br />
Introduction<br />
On-chip optical interconnects will be essential for future<br />
integrated circuits. Many key components that can be<br />
integrated on the chip have already been demonstrated by Si<br />
technology. A CMOS-compatible electrically pumped Sibased<br />
light emitter is still lacking. Different approaches for<br />
light emitters have been studied, e.g. (1-6). The desired light<br />
emitter should not only exhibit a high luminescence<br />
efficiency at room temperature (RT), but also be spatially<br />
confined and emit at about 1.5 or 1.3 µm.<br />
LEDs based on Er-doped layers consisting of Si nanoparticles<br />
embedded in Si oxide (7) or Si nitride (4), respectively, are<br />
known to emit at 1.55 µm. However, a rather high bias<br />
voltage is needed to cause efficient electroluminescence<br />
(EL). Another LED exhibiting 1.5 µm light emission with a<br />
RT efficiency > 0.1% (8) makes use of the luminescent<br />
properties of dislocations introduced by plastic deformation.<br />
Furthermore, also Si nanowires containing crystal<br />
defects/dislocations were observed to produce a dominating<br />
1.5 µm light emission at RT (9). In order to utilize<br />
dislocations as active elements in devices, their wellcontrolled,<br />
reproducible formation is an essential<br />
prerequisite.<br />
Recently, it has been demonstrated that Si wafer bonding<br />
allows the reproducible formation of dislocation networks<br />
that exhibit a dominating light emission at the desired<br />
wavelength of about 1.5 µm (6). EL at about 1.5 µm from a<br />
p-n junction formed by direct bonding of p- and n-type<br />
wafers was already observed a few years ago (10). The<br />
present paper reports an efficient light emission at 1.5 µm<br />
from a MOS-LED containing a regular dislocation network.<br />
1-4244-0439-8/06/$20.00 © <strong>2006</strong> IEEE<br />
IeDM technical Digest, 845 (<strong>2006</strong>)<br />
1<br />
<strong>IHP</strong>, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany<br />
2<br />
<strong>IHP</strong>/BTU Joint Lab, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany<br />
3<br />
MPI für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany<br />
4 St. Petersburg State University, Uljanovskaja 1, 198904 St. Petersburg, Russia<br />
The light emission was observed when the dislocation<br />
network was within/close to the accumulation layer formed<br />
by the gate bias.<br />
Dislocation-related luminescence in silicon<br />
A typical luminescence spectrum for dislocated Si with the<br />
quartet of defect-related D1-D4 lines (11) is shown in the<br />
insert of Fig. 1. The D1 and D3 lines appear at about 1.5 or<br />
1.3 µm, respectively, i.e. at the required wavelengths.<br />
For application of dislocations as active parts of LEDs their<br />
formation must be reproducible regarding both structure and<br />
location. Si wafer direct bonding using hydrophobic surfaces<br />
is a promising technique to form a regular dislocation<br />
network. Details of the bonding procedure used are described<br />
in (12). An example TEM micrograph of a periodic<br />
dislocation network consisting of closely spaced screw and<br />
edge dislocations is represented in Fig. 2. The structure of a<br />
dislocation network, i.e., density and type of the dislocations<br />
Fig. 1: Example of impact of misorientation/structure on the luminescence<br />
spectra of dislocation networks.<br />
(A) Twist angle of α = 9°, dominating D1 line; (B) twist angle of α = 8.2°,<br />
dominating D3 line. Same tilt angle of β = 0.2° in both cases. (C)<br />
Appearance of D1 line for the network shown in Fig. 2. The insert shows a<br />
typical spectrum of dislocated Si, exhibiting the D1-D4 lines formed by<br />
dislocations and the BB line.<br />
A n n u A l R e p o R t 2 0 0 6<br />
127
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Fig. 2: TEM plan view of a periodic dislocation network fabricated by direct<br />
bonding of (100) Si wafers. The directions of screw and edge dislocations<br />
are indicated. Note, for this network only the D1-line was detected (see<br />
spectrum C in Fig. 1).<br />
formed, depends on the misorientation angles for twist, α,<br />
and tilt, β, during wafer bonding. The dislocation network<br />
can be well reproduced by appropriately adjusting the angles.<br />
Fig. 1 demonstrates that the luminescence spectra strongly<br />
correlate with the structure of the dislocation network. Hence,<br />
the luminescence spectrum can be tailored by the<br />
misorientation angles in a controlled manner and dominance<br />
of either D1 or D3 radiation can be attained.<br />
A layer transfer treatment allows positioning the dislocation<br />
network close to the wafer surface, e.g. (13). The network<br />
can be placed at depths ranging from less than 50 nm (see<br />
Fig. 6) to micrometers below the surface.<br />
Fig. 3: EL of a MOS tunnel diode on p-Si exhibiting BB luminescence at<br />
300 K with an efficiency > 0.1 %. The insert shows the dependence of the<br />
EL signal on the current level.<br />
128 A n n u A l R e p o R t 2 0 0 6<br />
Silicon MOS-LED<br />
EL with emission of the band-to-band (BB) line at about<br />
1.1 µm has been reported from a MOS tunnel diode<br />
prepared on n-type Si (14). Under positive gate bias electrons<br />
EL intensity (a.u.)<br />
300 K<br />
EL intensity (a.u.)<br />
900 1000 1100 1200 1300 1400<br />
Wavelength (nm)<br />
1000 1200 1400 1600<br />
Wavelength (nm)<br />
5<br />
60 mA<br />
20<br />
10<br />
(a) (b)<br />
Fig. 4: Scheme of MOS-LED, (a) p-type material with dislocation network,<br />
capable of yielding both dislocation and BB luminescence, (b) n-type Si<br />
without network yielding BB luminescence only.<br />
are attracted, building an accumulation layer close to the<br />
Si/oxide interface, and a hole current is formed by tunneling<br />
through the oxide layer.<br />
Also MOS tunnel diodes on p-type Si yield comparable<br />
results. Fig. 3 shows the EL spectrum observed at RT<br />
exhibiting the BB line with an efficiency > 0.1%. As shown<br />
in the insert the EL intensity increases sub-linearly with<br />
increasing tunneling current. The basic processes in MOS-<br />
LEDs on n-type and p-type Si, respectively, are schematically<br />
represented in Fig. 4.<br />
Dislocation-based MOS-LED<br />
When a dislocation network with appropriate structure is<br />
positioned near the Si/oxide interface, close to/within the<br />
accumulation layer, the radiative recombination is dominated<br />
by the D1 line at about 1.5 µm instead of the BB line.<br />
280000<br />
260000<br />
EL intensity (a.u.)<br />
240000<br />
220000<br />
200000<br />
180000<br />
160000<br />
140000<br />
Current (A)<br />
0,01<br />
1E-3<br />
1E-4<br />
1E-5<br />
1E-6<br />
1E-7<br />
1.1<br />
Energy (eV)<br />
1.0 0.9<br />
0 1<br />
Voltage (V)<br />
2 3<br />
120000<br />
1000 1100 1200 1300 1400 1500 1600 1700<br />
Wavelength (nm)<br />
Fig. 5: Electroluminescence at 80 K of a MOS-LED (gate area of about<br />
7.9 x 10 -3<br />
cm 2<br />
) under negative gate bias with 1.5 µm radiation caused by the<br />
dislocation network near the Si/oxide interface. The intensity is found to<br />
increase sub-linearly with increasing tunneling current as seen from the<br />
spectra measured at 2, 5 and 8 mA, respectively. The insert represents the<br />
I-V characteristic of the LED at 300K.<br />
0.8<br />
8 mA<br />
5<br />
2
Fig. 6: XTEM of the MOS-LED consiting of a 134 nm Ti layer on 1.8 nm Si<br />
oxide. The dislocation network is positioned in a depth of about 45 nm and<br />
was fabricated by direct bonding of p-type Si wafers, ρ ~ 10 Ωcm, with<br />
(100) orientation.<br />
This is clearly seen from the EL spectra shown in Fig. 5. The<br />
MOS-LED on p-type Si, with the dislocation network at a<br />
depth of about 45 nm, consisted of a 134 nm thick Ti gate<br />
(7.9 x 10 -3 cm 2 ) deposited on 1.8 nm thick Si oxide, see TEM<br />
micrographs shown in Fig. 6. The I-V characteristic is given<br />
in the insert of Fig. 5. The tunneling current increases with<br />
increasing gate voltage, leading to an enhancement of the EL<br />
intensity.<br />
To estimate the efficiency, we compared the EL of a Si p-n<br />
diode under forward bias with that of the MOS-LED (Fig. 7),<br />
obtaining a value of about 0.1% for the 1.5 µm emission<br />
generated by the MOS-LED at 80 K. Fig. 8 shows that<br />
increasing the temperature (T) from 80 to 210 K causes a<br />
red-shift of the D1 line and a reduction of the EL intensity /<br />
EL power intensity (pW nm -1<br />
)<br />
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
1.6 1.4<br />
Wavelength (µm)<br />
1.2 1<br />
MOS-LED<br />
p-n diode<br />
0.6 µW /A 1.35 µW/A<br />
0<br />
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br />
Energy (eV)<br />
Fig. 7: Comparison of the EL internal quantum efficiencies of a Si p-n diode<br />
and the MOS-LED. The p-n diode was measured at RT under forward bias,<br />
yielding an efficiency of 0.15%. For the MOS-LED, the estimated efficiency<br />
at 80K was about 0.1%.<br />
EL intensity (a.u.)<br />
W a ve le ng th (µm )<br />
1 .7 1.6 1 .5 1.4 1 .3 1.2 1 .1<br />
T = 21 0 K<br />
T = 8 0 K<br />
0.7 0.8 0.9 1.0 1.1 1.2<br />
Energy (eV )<br />
Fig. 8: Comparison of EL of the MOS-LED at 80 and 210 K. The EL data<br />
are normalized on tunneling current values.<br />
efficiency by a factor of about 2. Increase of temperature to<br />
300 K was found to further reduce the EL efficiency.<br />
Nevertheless, we suppose that sufficient 1.5 µm<br />
luminescence at 300 K is achievable with dislocation<br />
networks, since clearly detectable D1 emission at 300 K<br />
(efficiency > 0.1%) was demonstrated already for a p-n LED<br />
containing a dislocation network.<br />
Prospects for future improvements<br />
We suppose that elimination of non-radiative recombination<br />
channels, such as states at the Si/oxide interface, will<br />
significantly improve the efficiency. The reported upper limit<br />
of efficiency of radiative recombination in Si at RT is about<br />
20% (15).<br />
Utilization of gate dielectrics with smaller band-gap, e.g. Hf<br />
oxide, and stacks of multiple parallel networks could enhance<br />
efficiency further.<br />
Moreover, a bias voltage applied to the network significantly<br />
enhances the D-line emission in the cathodoluminescence<br />
mode (Fig. 9a), probably due to modification of the<br />
occupancy of the dislocation defect levels (16,17).<br />
Accordingly, a combination of a MOS diode or a p-n junction<br />
under forward bias, for injection of excess carriers with<br />
additional bias voltage applied to the network could be an<br />
alternative LED design (Fig. 9b). This might even allow<br />
modulation of the LED via the bias voltage.<br />
We also observed that, for the same structure of the<br />
dislocation network, the intensity of the D1 luminescence is<br />
significantly enhanced (about three times) by a trace of<br />
oxygen accommodated at the bonded interface (18). Oxygen<br />
exhibits this positive influence when its content is just above<br />
the SIMS detection limit and when no Si oxide precipitates<br />
are observed at the bonded interface. Hence, controlled<br />
placement of a trace of oxygen (Si oxide) before wafer direct<br />
bonding may help to increase the efficiency of a dislocationbased<br />
light emitter.<br />
A n n u A l R e p o R t 2 0 0 6<br />
129
N A C H D R U C K E A U S G E W Ä H L T E R P U b L i K A T i o N E N – R E P R i N T S o F S E L E C T E D P U b L i C A T i o N S<br />
Fig. 9: Influence of a bias voltage: (a) Enhancement of D-line CL emission<br />
caused by a bias applied to the dislocation network. The maximum intensity<br />
appears at about 2.5 V. The insert represents the sample configuration. (b)<br />
Suggested LED design to exploit this effect.<br />
130 A n n u A l R e p o R t 2 0 0 6<br />
Summary<br />
A novel Si LED for IR emission has been demonstrated,<br />
which does not require additional Er doping and is fully<br />
compatible with Si technology. According to our estimates<br />
and the supposed improvements it offers the capability for an<br />
efficiency around 1% at RT. We consider the proposed<br />
network-based MOS-LED a promising concept for the<br />
realization of a Si-based on-chip light emitter.<br />
Acknowledgements<br />
(a)<br />
(b)<br />
The authors would like to thank G. Weidner for X-TEM.<br />
Parts of this work have been supported by the<br />
Volkswagenstiftung Hannover, Germany.<br />
References<br />
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Tech. Digest (2004) pp. 343-346.<br />
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(5) M.H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu,<br />
S.T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, C.W.<br />
Liu, IEDM Tech. Digest (2005) pp. 1023-1026<br />
(6) M. Kittler, M. Reiche, T. Arguirov, W. Seifert, X. Yu, IEDM Tech.<br />
Digest (2005) pp. 1027-1030.<br />
(7) F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzo, F. Priolo,<br />
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(<strong>2006</strong>).<br />
(10) E.Ö. Sveinbjörnsson, S. Bengtsson, J. Weber, N. Keskitalo, ECS Proc.<br />
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Phys. Lett. 82, 2996 (2003).<br />
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(17) X. Yu, O.F. Vyvenko, M. Kittler, W. Seifert, T. Mchedlidze,<br />
T. Arguirov, M. Reiche, “Combined CL/EBIC/DLTS Investigation of a<br />
Regular Dislocation Network Formed by Silicon Wafer Direct<br />
Bonding”, “Beam Injection Assessment of Microstructures in<br />
Semiconductors - BIAMS <strong>2006</strong>”, St. Petersburg, June <strong>2006</strong>, BIAMS<br />
Proceedings in press.<br />
(18) M. Kittler, M. Reiche, W. Seifert, X. Yu, T. Arguirov, O.F. Vyvenko,<br />
T. Mchedlidze, T. Wilhelm, "Regular Dislocation Networks in Silicon<br />
as a Tool for Novel Device Application", "High Purity Silicon 9” ,<br />
ECS Transactions - Cancun, Volume 3 (<strong>2006</strong>), in press.
Erschienene Publikationen<br />
Published Papers<br />
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(1) Determination of Low Concentrations of<br />
N and C in CZ-Si by Precise FTiR<br />
Spectroscopy<br />
V.D. Akhmetov, H. Richter, n. Inoue<br />
Materials Science and engineering B 134(2-3),<br />
207 (<strong>2006</strong>)<br />
Adding of relatively small amounts of n and C, on<br />
the order of 1 × 10 14 cm -3 in the growing crystals of<br />
Czochralski Si (CZ-Si) is considered now as a tool for<br />
the control of the internal gettering processes based<br />
on the precipitation of oxygen. the sensitivity of the<br />
conventional procedure of measurements by Fourier<br />
transform infrared (Ft-IR) spectroscopy measurements<br />
is not sufficient to determine, in a reliable<br />
manner, such concentrations of n and C. this report<br />
contains results of the implementation of the modified<br />
method of Ft-IR measurements, which allows<br />
one to improve the sensitivity for more than one order<br />
of magnitude. the new method is based mainly<br />
on (1) the modified Ft-IR system with enhanced photometric<br />
accuracy achieved by a suppression of the<br />
influence of the instabilities, and (2) using Brewster<br />
geometry to suppress the interference effects. the<br />
method contains built-in checking of the achieved<br />
accuracy of the recorded spectrum. the examples of<br />
the determination of [n] and [C] on the 10 14 cm -3 -level<br />
in 2 mm thick samples as well as in industrial wafers<br />
are presented.<br />
(2) FTiR Spectroscopic System with improved<br />
Sensitivity<br />
V.D. Akhmetov, H. Richter<br />
Materials Science in Semiconductor<br />
processing 9(1-3), 92 (<strong>2006</strong>)<br />
the problem of the determination of the intensity of<br />
weak infrared (IR) absorption bands by differential<br />
IR spectroscopy is considered for the case of a noise-limited<br />
sensitivity. A spectroscopic system based<br />
on a Fourier transform IR (FtIR) spectrometer which<br />
improves the sensitivity of the IR method by at least<br />
30 times, is described. In the conventional differen-<br />
tial FtIR measurements, only a single pair of spectra<br />
(from the analyzed sample and from the reference) is<br />
taken during the whole acquisition time. In contrast,<br />
in our system, we take the data interchangeably from<br />
the analyzed pair of sample and reference during the<br />
same acquisition time. this “modulation” of samples<br />
suppresses the contribution of the low-frequency<br />
noise as well as long-term instabilities in the differential<br />
spectrum. the described system consists of an<br />
FtIR spectrometer, a computer-controlled optimized<br />
sample changer, and software for fully automated<br />
multiple measurements. the main steps of data processing<br />
as well as an example of application of multiple<br />
measurements for a diagnostics of thin wafers<br />
are presented.<br />
(3) Pressure-induced Transformations of<br />
Nitrogen implanted into Silicon<br />
V.D. Akhmetov, A. Misiuk, A. Barcz, H. Richter<br />
physica Status Solidi A 203(4), 781 (<strong>2006</strong>)<br />
Czochralski (CZ) Si samples implanted with nitrogen,<br />
with doses 10 17 ion / cm 2 and 10 18 ion / cm 2 , at 140<br />
keV, were studied by means of Fourier transform infrared<br />
spectroscopy after annealing at 1130 °C / 5 h<br />
under different hydrostatic pressures, from 1 bar<br />
to 10.7 kbar. It has been found for each pressure<br />
applied, that the increased nitrogen dose leads to<br />
transformation of the broadband spectra to the fine<br />
structure ones, corresponding to crystalline silicon<br />
nitride. the spectral position of observed sharp peaks<br />
in the investigated pressure region is red shifted in<br />
comparison to that for the peaks of crystalline silicon<br />
oxynitride found recently by other investigators<br />
in nitrogen-containing poly-Si as well as in a residual<br />
melt of nitrogen-doped CZ-Si. the application of the<br />
pressure during annealing results in further red shift<br />
of the nitrogen-related bands. the observed decrease<br />
of frequency of vibrational bands is explained in<br />
terms of the pressure induced lowered incorporation<br />
of oxygen into growing oxynitride phase. Secondary<br />
ion mass spectrometry data reveal the decrease of<br />
oxygen content in implanted layer with increasing<br />
pressure during annealing.<br />
A n n u A l R e p o R t 2 0 0 6<br />
131
132 A n n u A l R e p o R t 2 0 0 6<br />
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(4) Pressure-assisted Lateral Nanostructuring<br />
of the Epitaxial Silicon Layers with SiGe<br />
Quantum Wells<br />
I.V. Antonova, M.B. Gulyaev, V.A. Skuratov,<br />
R.A. Soots, V.I. obodnikov, A. Misiuk,<br />
p. Zaumseil<br />
Solid State phenomena 114, 291 (<strong>2006</strong>)<br />
transformations of the SiGe / Si superlattice structures,<br />
either annealed at high pressure, or irradiated<br />
by high energy ions and subjected to post-implantation<br />
annealing, were studied and compared. Both<br />
types of treatments were found to lead to the formation<br />
of recharged defects clusters, resulting in the<br />
appearance of peaks on C-V characteristics, shrinkage<br />
of Ge profiles registered by SIMS technique after annealing,<br />
and disappearance of peaks in the free carrier<br />
profiles. the effects were more pronounced in the<br />
case of high energy ion implantation. the results are<br />
explained by the vacancy-assisted precipitation of Ge<br />
in SiGe layers.<br />
(5) Residual Stress in Si Nanocrystals<br />
Embedded in a Sio 2 Matrix<br />
t. Arguirov, t. Mchedlidze, M. Kittler, R. Rölver,<br />
B. Berghoff, M. Först, B. Spangenberg<br />
Applied physics letters 89, 053111 (<strong>2006</strong>)<br />
Multiple quantum wells consisting of alternating<br />
Si and Sio 2 layers were studied by means of Raman<br />
scattering. the structures were fabricated by the remote<br />
plasma enhanced chemical vapor deposition of<br />
amorphous Si and Sio 2 layers on quartz substrate. the<br />
structures were subjected to a rapid thermal annealing<br />
procedure for Si crystallization. the obtained<br />
results suggest that the Si layers consist of nanocrystals<br />
embedded in an amorphous Si phase. It was<br />
found that the silicon nanocrystals inside 2 nm thin<br />
layers are under high residual compressive stress. Moreover,<br />
the metastable Si III phase was detected in<br />
these samples supporting the presence of large compressive<br />
stresses in the structures. the compressive<br />
stress could be relaxed upon local laser annealing.<br />
(6) Towards Silicon based Light Emitters<br />
Utilising the Radiation from Dislocation<br />
Networks<br />
t. Arguirov, M. Kittler, W. Seifert, X. Yu<br />
Materials Science and engineering B 134,<br />
109 (<strong>2006</strong>)<br />
on-chip optical interconnects require a CMoS-compatible<br />
electrically pumped Si-based light emitter<br />
at about 1.5 µm. Dislocations in silicon offer a recombination<br />
centre for light emission at the desired<br />
energy. Here we report on the radiative properties of<br />
dislocation networks, created in a well controllable<br />
manner at a certain depth of silicon wafers. Dislocation<br />
networks, created by ion implantation and annealing,<br />
misfit dislocation in SiGe buffers and a novel<br />
concept of dislocations created by misoriented direct<br />
bonded Si wafers are discussed. We demonstrate that<br />
under a specific misorientation a dislocation network<br />
with efficient room temperature D1 (1.55 µm) emission<br />
might be generated.<br />
(7) Structure of biomembrane-on-Silicon<br />
Hybrids Derived from X-Ray Reflectometry<br />
M. Birkholz, p. Zaumseil, M. Kittler, I. Wallat,<br />
M. Heyn<br />
Materials Science and engineering B 134,<br />
125 (<strong>2006</strong>)<br />
the organic–inorganic interface and its proper structural<br />
adjustment are of central importance for the<br />
fabrication of hybrid material systems from biomolecules<br />
and semiconductors. Such material hybrids are<br />
currently under development for several advanced<br />
applications, in particular for biomolecular sensing.<br />
An investigation of biomolecular immobilization on<br />
semiconductor surfaces by X-ray reflectometry (XRR)<br />
will be presented. Complete biomembrane patches<br />
of purple membrane (pM) from Halobacterium salinarum<br />
were immobilized on oxidized and nitrided<br />
silicon wafers. A covalent immobilization protocol<br />
based on 3-aminopropyltriethoxysilane (AptS) and<br />
glutaric dialdehyde (GD) was applied for cross-linking<br />
the biomolecules to the semiconductor surface. XRR<br />
could be shown to yield the relevant morphological<br />
parameters of biomolecular monolayers such as layer
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
thickness, interface roughness and coverage. Synchrotron<br />
radiation was not required, but a laboratory<br />
rotating anode set-up was sufficient to study the prepared<br />
stacking of organic monolayers. According to<br />
the measurement and analysis of XRR patterns both<br />
cross-linking layers AptS and GD are required for bonding<br />
purple membrane patches to Sio 2 / Si, whereas<br />
GD alone suffices for cross-linking to Si 3 n 4 / Si. this<br />
distinct behavior offers a pathway for nanopatterning<br />
of biomolecules on Si surfaces by selective passivation.<br />
(8) A 20 GSample/s, 40 mW SiGe HbT<br />
Comparator for Ultra-High-Speed ADC<br />
Y. Borokhovych, H. Gustat<br />
eCS transactions 3(7), 937 (<strong>2006</strong>)<br />
this paper presents a high-speed master-slave comparator<br />
in an eCl configuration. Implemented in 190 GHz<br />
SiGe HBt technology, the comparator occupies<br />
0.7 x 0.7 mm 2 , including bondpads. the comparator<br />
can operate at a speed up to 20 GSample / s with a resolution<br />
of 7.2 bits per 1.2 Vp-p input. the low power<br />
consumption of the comparator itself (40 mW) and<br />
its small corearea of 190 x 35 µm 2 make it suitable<br />
for mediumresolution full-flash A / D converters and<br />
other low-power comparator applications.<br />
(9) Ab initio Study of Point Defects in<br />
Dielectrics based on Pr oxides<br />
J. Dabrowski, A. Fleszar, G. lupina, Ch. Wenger<br />
Materials Science in Semiconductor<br />
processing 9, 897 (<strong>2006</strong>)<br />
We discuss the influence of band structures and point<br />
defects (oxygen vacancies and interstitials, and praseodymium<br />
vacancies) in pr 2 o 3 , pro 2 , and prSio 3.5 on<br />
the electrical properties of high-K gate dielectrics for<br />
the application in CMoS technology. In particular,<br />
we consider the origin of fixed charges and leakage<br />
currents. We address these issues mostly from the<br />
perspective of ab initio calculations for formation<br />
energies, electronic structures, and band alignment<br />
between the film and the silicon substrate.<br />
(10) High Spatial Resolution Mapping of<br />
Partially Strain-Compensated SiGe:C Films<br />
in the Presence of Postannealed Defects<br />
A.V. Darahanau, A. Benci, A.Y nikulin,<br />
J. etheridge, J. Hester, p. Zaumseil<br />
Journal of Applied physics 99, 113531 (<strong>2006</strong>)<br />
An experimental-analytical technique for the model-independent<br />
nondestructive characterization of singlecrystal<br />
alloys is applied to partially strain-compensated<br />
SiGe:C / Si single layer structures with high concentrations<br />
of Ge. the studies were performed on pre- and postannealed<br />
SiGe:C / Si samples. X-ray Bragg diffraction<br />
profiles were collected at a synchrotron radiation source<br />
near the absorption edge of Ge. the studies have allowed<br />
the reconstruction of the complex crystal structure<br />
factor as a function of crystal depth, permitting direct<br />
observation of the effect of the thermal annealing on<br />
lattice strain and structural composition in the SiGe:C<br />
layer. the technique was shown to be applicable to the<br />
analysis of both perfect crystals and crystal structures<br />
containing a low defect concentration.<br />
(11) An integrated 3.1-5.1 GHz Pulse Generator<br />
for Ultra-Wideband Wireless Localization<br />
Systems<br />
X. Fan, G. Fischer, B. Dietrich<br />
Advances in Radio Science 4, 247 (<strong>2006</strong>)<br />
this paper presents an implementation of an integrated<br />
ultra-wideband (uWB), Binary-phase Shift<br />
Keying (BpSK) Gaussian modulated pulse generator.<br />
VCo, multiplier and passive Gaussian filter are the key<br />
components. the VCo provides the carrier frequency<br />
of 4.1 GHz, the lC Gaussian filter is responsible for the<br />
pulse shaping in the baseband. Multiplying the baseband<br />
pulse and the VCo frequency shifts the pulse to<br />
the desired center frequency. the generated Gaussian<br />
pulse ocuppies the frequency range from 3.1 to 5.1 GHz<br />
with the center frequency at 4.1 GHz. Simulations<br />
and measured results show that this spectrum fulfills<br />
the mask for indoor communication systems given by<br />
the FCC (Federal Communications Commission, 2002).<br />
the total power consumption is 55 mW using a supply<br />
voltage of 2.5 V. Circuits are realized using the IHp<br />
0.25 µm SiGe:C BiCMoS technology.<br />
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(12) Cost-Effective integration of an FNprogrammed<br />
Embedded Flash Memory into<br />
a 0.25 µm SiGe:C RF-biCMoS Technology<br />
A. Fox, K.e. ehwald, p. Schley, R. Barth,<br />
S. Marschmeyer, C. Wolf, V.e. Stikanov,<br />
A. Gromovyy and A. Hudyryev<br />
<strong>Microelectronics</strong> Journal 37(11), 1194 (<strong>2006</strong>)<br />
this paper presents a process technology for costeffective<br />
integration of low-power flash memories<br />
into a 0.25 µm, high performance SiGe:C RF-BiCMoS<br />
process. only four additional lithographic steps are<br />
used on top of the baseline BiCMoS process, leading<br />
to in total 23 mask levels for the BiCMoS / embedded<br />
flash process. uniform-channel Fowler-nordheim programmable<br />
and erasable stacked-gate cells, suitable<br />
for medium density (Mbit) memories, are demonstrated.<br />
peripheral high-voltage transistors, with >10 V<br />
breakdown voltage, are integrated without additional<br />
mask steps on top of the flash cell integration. the<br />
flash memory integration is modular and has negligible<br />
impact on the original CMoS and HBt device<br />
parameters.<br />
(13) infrared Absorption Measurement of<br />
Carbon Concentration in Silicon Crystals<br />
n. Inoue, M. nakatsu, V. Akhmetov<br />
eCS transactions 2(2), 461 (<strong>2006</strong>)<br />
Sensitivity and accuracy of carbon concentration<br />
measurement by infrared (IR) absorption spectroscopy<br />
are improved. We cut unnecessary high energy<br />
light input by a low pass filter. Measurement condition<br />
of sample and reference is kept as equal as possible<br />
by using the sample changer and measure them<br />
alternately for many times. It is possible to improve<br />
the accuracy by keeping the temperature of sample<br />
and reference as close as possible. In the analytical<br />
procedure, we use a reduced phonon spectrum fitting<br />
instead of straight baseline. Standard carbon spectrum<br />
fitting to a small carbon peak make it possible<br />
to determine the carbon concentration accurately. As<br />
a result, we can measure differential carbon concentration<br />
down to about 1x10 14 atoms / cm 3 .<br />
(14) 1.5 µm Luminescence of Silicon Nanowires<br />
Fabricated by Thermal Evaporation of Sio<br />
G. Jia, M. Kittler, Z. Su, D. Yang, and J. Sha<br />
physica Status Solidi A 203, R55 (<strong>2006</strong>).<br />
Silicon nanowires (nWs) fabricated by thermal evaporation<br />
of Sio were studied by cathodoluminescence.<br />
A band around 1550 nm (0.8 eV) was observed. It<br />
appears above 225 K and its intensity increases with<br />
increasing temperature. the broad band consists of<br />
the defect-related D1 and D2 lines and is supposed to<br />
be formed by extended defects within the nWs that<br />
are decorated with oxygen. Moreover, luminescence<br />
bands are found that are related to Si oxide and / or<br />
the interface between Si and Si oxide. In addition, the<br />
Si band-to-band line and the G center are observed.<br />
(15) A Contribution to oxide Precipitate<br />
Nucleation in Nitrogen Doped Silicon<br />
G. Kissinger, u. lambert, M. Weber,<br />
F. Bittersberger, t. Müller, H. Richter,<br />
W. von Ammon<br />
physica Status Solidi A 203(4), 677 (<strong>2006</strong>)<br />
Based on Fourier transform infrared (FtIR) spectroscopy<br />
and bulk micro-defect investigations, in relation<br />
to earlier results of other groups, we suggest<br />
the following model for oxide precipitate nucleation<br />
in n-doped silicon. Around 600 °C a nucleation maximum<br />
exists where oxide precipitates are formed via<br />
oxygen attachment to both noo and nno complexes.<br />
these complexes are formed by the reaction of nn<br />
with interstitial oxygen. Vacancy supersaturation enhances<br />
this type of precipitate nucleation. A second<br />
nucleation maximum exists around 900 °C. this is<br />
assumed to be due to a vacancy assisted oxynitride<br />
Sio x n y based nucleation process. the higher density<br />
of the oxynitride phase compared to silicon oxide and<br />
a higher residual vacancy concentration would explain<br />
the observed shift of the maximum nucleation<br />
rate to higher temperatures around 900 °C.
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(16) Analytical Modeling of the interaction of<br />
Vacancies and oxygen for oxide Precipitation<br />
in RTA Treated Silicon Wafers<br />
G. Kissinger, J. Dabrowski, A. Sattler,<br />
C. Seuring, t. Müller, H. Richter, W. von Ammon<br />
eCS transactions 2(2), 247 (<strong>2006</strong>)<br />
We have investigated the impact of RtA induced vacancy<br />
supersaturation on oxide precipitation based<br />
on as much as possible experimental and theoretical<br />
values. oxygen precipitation after RtA processing was<br />
found to be controlled by the initial concentration of<br />
interstitial oxygen in a sixth power dependency and<br />
frozen vacancies just in a cubic dependency. the formation<br />
of tensile strained nVo 2 clusters seems to be<br />
the favored process for coherent nucleation of oxide<br />
precipitates. the reduction of interstitial oxygen<br />
can be accurately modeled for the temperature range<br />
from 1150 °C to 1250 °C using Ham‘s theory for<br />
precipitate growth and an empirical relation based<br />
on nucleation of oxide precipitates by agglomeration<br />
of Vo 2 complexes. During RtA treatments at temperatures<br />
greater than or equal to 1300 °C vacancies seem<br />
to be consumed by other processes. Below RtA temperatures<br />
of 1150 °C, oxide precipitation is dominated<br />
by shrunken as-grown precipitate nuclei because<br />
as-grown nuclei can be dissolved only at RtA temperatures<br />
greater than or equal to 1150 °C.<br />
(17) Combination of optical Measurement and<br />
Precipitation Theory to overcome the<br />
obstacles of Detection Limits<br />
G. Kissinger, t. Müller, A. Sattler, W. Häckl,<br />
p. Krottenthaler, t. Grabolla, H. Richter,<br />
W. von Ammon<br />
Materials Science in Semiconductor<br />
processing 9, 236 (<strong>2006</strong>)<br />
Ham‘s theory was applied in order to become independent<br />
of detection limits for oxide precipitates and<br />
to quantify the phenomenon of oxygen loss to invisible<br />
BMDs during thermal treatments. the density<br />
of detectable bulk micro-defects (BMDs) depends on<br />
the size distribution of grown-in nuclei and the ramp<br />
rate, temperature, and duration of the thermal treatment<br />
applied. there is no correlation to the invisible<br />
BMDs. During conventional annealing, the density of<br />
the invisible BMDs decreases exponentially with increasing<br />
radius of precipitates at a nearly constant<br />
loss of interstitial oxygen. only if the calculated radius<br />
exceeds 70 nm, a 100 % loss of interstitial oxygen<br />
to BMDs detectable by scanning infrared microscopy<br />
(SIRM) seems to be possible. After RtA processing at<br />
1230 °C, a period of 1 h at 1000 °C would be necessary<br />
for the growing oxide precipitates to reach a saturated<br />
density detectable by SIRM, but there remains a<br />
very high density of invisible BMDs consuming interstitial<br />
oxygen. In n-doped silicon, the vast majority<br />
of BMDs is detectable by SIRM, cleave and etch, and<br />
infrared light scattering tomography after thermal<br />
processing.<br />
(18) oxide Precipitation via Coherent<br />
“Seed”-oxide Phases<br />
G. Kissinger, J. Dabrowski<br />
eCS transactions 3(4), 97 (<strong>2006</strong>)<br />
until now, oxide precipitation is treated in theoretical<br />
models as homogeneous nucleation of incoherent<br />
Sio x precipitates. In reality, this type of nucleation is<br />
very seldom because it is hindered by a high energy<br />
barrier which results from the incoherent interface.<br />
the key role of Vo 2 complexes for nucleation of oxide<br />
precipitates was already demonstrated on a broad experimental<br />
basis. Ab initio calculations have shown<br />
that the agglomeration of Vo 2 is energetically favorable.<br />
In this contribution, the bulk modulus and molecular<br />
volume of nVo 2 clusters, so-called seed-Sio 2 ,<br />
are determined and an analytical nucleation model is<br />
developed. In a second step, a more advanced model<br />
was developed which is based on a mono-layered agglomeration<br />
of Vo 2 complexes on 100 planes, so called<br />
seed-Sio and the heterogeneous nucleation of amorphous<br />
Sio 2 (a-Sio 2 ) at these plates. From energetic<br />
reasons, the advanced model is regarded as the most<br />
plausible nucleation path.<br />
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(19) Regular Dislocation Networks in Silicon<br />
as a Tool for Novel Device Application<br />
M. Kittler, M. Reiche, W. Seifert, X. Yu,<br />
t. Arguirov, o.F. Vyvenko, t. Mchedlidze,<br />
t. Wilhelm<br />
eCS transactions 3(4), 429 (<strong>2006</strong>)<br />
the paper deals with possibilities of utilizing dislocation<br />
structures as active components of devices. the<br />
suggested means for controlled formation of dislocations<br />
is direct wafer bonding, giving rise to well defined<br />
dislocation networks with adjustable properties.<br />
It is shown that the networks allow building light<br />
emitting diodes based on the D line luminescence<br />
of the dislocations. A light emitter at about 1.5 µm<br />
wavelength is demonstrated, with an efficiency potential<br />
estimated at 1 %. Immobilization of biomolecules<br />
on Si surfaces by Coulomb interaction with the<br />
dislocations in the network is another application<br />
discussed. Finally, the potential use of dislocation<br />
networks as insulating layers permeable to impurities<br />
to be gettered and as three-dimensional buried conductive<br />
channels in the Si wafer is addressed.<br />
(20) Self-organized Pattern Formation of<br />
biomolecules at Si Surfaces: intended<br />
Application of a Dislocation Network<br />
M. Kittler, X. Yu, o.F. Vyvenko, M. Birkholz,<br />
W. Seifert, M. Reiche, t. Wilhelm, t. Arguirov,<br />
A. Wolff, W. Fritzsche, M. Seibt<br />
Materials Science and engineering C 26,<br />
902 (<strong>2006</strong>)<br />
Defined placement of biomolecules at Si surfaces is a<br />
precondition for a successful combination of Si electronics<br />
with biological applications. We aim to realize<br />
this by Coulomb interaction of biomolecules with dislocations<br />
in Si. the dislocations form charged lines<br />
and they will be surrounded with a space charge region<br />
being connected with an electric field. the electric<br />
stray field in a solution of biomolecules, caused<br />
by dislocations located close to the Si surface, was<br />
estimated to yield values up to few kVcm -1 . A regular<br />
dislocation network can be formed by wafer direct<br />
bonding at the interface between the bonded wafers<br />
in case of misorientation. the adjustment of misori-<br />
entation allows the variation of the distance between<br />
dislocations in a range from 10 nm to a few µm. this is<br />
appropriate for nanobiotechnology dealing with protein<br />
or DnA molecules with sizes in the nm and lower<br />
µm range. Actually, we achieved a distance between<br />
the dislocations of 10–20 nm. Also the existence of a<br />
distinct electric field formed by the dislocation network<br />
was demonstrated by the technique of the electron-beam-induced<br />
current (eBIC). Because of the<br />
relatively short range of the field, the dislocations<br />
have to be placed close to the surface. We positioned<br />
the dislocation network in an interface being 200 nm<br />
parallel to the Si surface by layer transfer techniques<br />
using hydrogen implantation and bonding. Based on<br />
eBIC and luminescence data we postulate a barrier of<br />
the dislocations at the as bonded interface < 100 meV.<br />
We plan to dope the dislocations with metal atoms<br />
to increase the electric field. We demonstrated that<br />
regular periodic dislocation networks close to the Si<br />
surface formed by bonding are realistic candidates for<br />
self-organized placing of biomolecules. experiments<br />
are underway to test whether biomolecules decorate<br />
the pattern of the dislocation lines.<br />
(21) Silicon-based Light Emitters<br />
M. Kittler, M. Reiche, t. Arguirov,<br />
W. Seifert, X. Yu<br />
physica Status Solidi A 203(4), 802 (<strong>2006</strong>)<br />
A new concept for a Si light emitting diode (leD) capable<br />
of emitting efficiently at 1.55 µm or at 1.3 µm,<br />
respectively, is proposed. It utilizes radiation from a<br />
well-defined dislocation network created in a reproducible<br />
manner by direct Si wafer bonding. the wavelength<br />
of the light emitted from the network can be<br />
tailored by adjusting the misorientation between the<br />
Si wafers. that way dominance of radiation at 1.55 µm<br />
(D1 line) or at 1.3 µm (D3 line) was achieved. there<br />
are hints that decoration of the dislocations by<br />
oxygen enhances the intensity of the D1 radiation.<br />
A critical analysis of the light emitter proposed by W.<br />
l. ng et al. [nature 410, 192 (2001)] using band-toband<br />
emission is given. Its application at the above<br />
wavelengths would require a few microns thick SiGe<br />
layer on top of the Si substrate.
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(22) System integration by Request-driven<br />
GALS Design<br />
M. Krstic, e. Grass, C. Stahl, M. piz<br />
Iee proceedings - Computers and Digital<br />
techniques 153(5), 362 (<strong>2006</strong>)<br />
A novel request-driven globally asynchronous locally<br />
synchronous (GAlS) technique for the system integration<br />
of complex digital blocks is proposed. For this new<br />
GAlS technique, an asynchronous wrapper compliant<br />
is developed and evaluated. this proposed GAlS technique<br />
is applied to a baseband processor compatible<br />
with the wireless lAn standard Ieee 802.11a. the developed<br />
GAlS baseband processor chip is fabricated<br />
and measured. Besides improvements of the system<br />
integration process, a 5 dB reduction in electromagnetic<br />
interference, 30 % reduction in instantaneous<br />
supply current variation, and similar dynamic power<br />
consumption as in the synchronous baseband processor<br />
is achieved.<br />
(23) A Low-Power, X-band SiGe HbT Low-Noise<br />
Amplifier for Near-Space Radar Applications<br />
W.-M. l. Kuo, R. Krithivasan, X. li, Y. lu,<br />
J. D. Cressler, H. Gustat, B. Heinemann<br />
Ieee Microwave and Wireless Components<br />
letters 16(9), 520 (<strong>2006</strong>)<br />
A low-power, X-band low-noise amplifier (lnA) is presented.<br />
Implemented with 180 GHz silicon-germanium<br />
(SiGe) heterojunction bipolar transistors (HBts),<br />
the circuit occupies 780 x 660 µm 2 . the lnA exhibits<br />
a gain of 11.0 dB at 9.5 GHz, a mean noise figure of<br />
2.78 dB across X-band, and an input third-order intercept<br />
point of -9.1 dBm near 9.5 GHz, while dissipating<br />
only 2.5 mW. the low-power performance of this lnA,<br />
together with its natural total-dose radiation immunity,<br />
demonstrates the potential of SiGe HBt technology<br />
for near-space radar applications.<br />
(24) A Distributed Privacy Enforcement<br />
Architecture based on Kerberos<br />
p. langendörfer, K. piotrowski, M. Maaser<br />
WSeAS transactions on Communications 5,<br />
2 (<strong>2006</strong>)<br />
In this paper we propose a distributed privacy enforcement<br />
architecture. each mobile client runs its own<br />
privacy negotiation unit as well as its own Kerberos<br />
ticket granting server. the privacy negotiation units<br />
are compatible with the p3p standard, but allow mutual<br />
exchange of privacy policies and enforce that these<br />
are digitally signed in case of an agreement. each of<br />
the individual tGS may provide tickets only for data<br />
that is owned by the mobile (user) on behalf of which<br />
it is executed. In addition the initial authentication<br />
phase can be done by the standard Kerberos approach<br />
as well as based on pKI using certificate chains. So<br />
our architecture gives the user back control over her<br />
personal data and it provides better scalability to the<br />
context aware platform. It also opens up the Kerberos<br />
approach for environments in which the mobile client<br />
discovers new services, which are not registered at its<br />
platform, i.e., at the Kerberos server. our measurements<br />
indicate that running our privacy enforcement<br />
architecture on the mobile device does not inhibit a<br />
real burden. Successful negotiations are completed<br />
within 2 seconds including message exchange and<br />
compiling a ticket is done in about 100 ms at 238 MHz<br />
and the client application size of our Java tGS implementation<br />
is less than 50 kByte.<br />
(25) Praseodymium Silicate Films on Si(100)<br />
for Gate Dielectric Applications: Physical<br />
and Electric Characterization<br />
G. lupina, t. Schroeder, J. Dabrowski,<br />
Ch. Wenger, A.u. Mane, H.-J. Müssig,<br />
p. Hoffmann, D. Schmeißer<br />
Journal of Applied physics 99, 114109 (<strong>2006</strong>)<br />
praseodymium (pr) silicate dielectric layers were<br />
prepared by oxidation and subsequent n 2 annealing<br />
of thin pr metal layers on Sio 2 / Si(100) substrates.<br />
transmission electron microscopy studies reveal<br />
that the resulting dielectric has a bilayer structure.<br />
nondestructive depth profiling by using synchrotron<br />
radiation x-ray photoelectron spectroscopy shows<br />
that, starting from the substrate, the dielectric stack<br />
is composed of a Sio 2 -rich and a Sio 2 -poor pr silicate<br />
phase. Valence and conduction band offsets of about<br />
2.9 and 1.6 eV, respectively, between the dielectric<br />
and the Si(100) substrate bands were deduced. pr<br />
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silicate films with an equivalent oxide thickness of<br />
1.8 nm show approximately three orders of magnitude<br />
lower leakage currents than silicon oxynitride references.<br />
Capacitance versus voltage measurements<br />
of the pr silicate / Si(100) system report a flat band<br />
voltage shift of 0.22 V, an effective dielectric constant<br />
of about 11 and a reasonably good interface<br />
quality with an interface state density on the order of<br />
10 11 cm –2 . experimental results are supplemented by<br />
ab initio considerations which review the most probable<br />
mechanisms of fixed charge formation in the pr<br />
silicate layers.<br />
(26) Thermal Stability of Pr Silicate High-k-<br />
Layers on Si(100)<br />
G. lupina, t. Schroeder, Ch. Wenger,<br />
J. Dabrowski, H.-J. Müssig<br />
Applied physics letters 89, 222909 (<strong>2006</strong>)<br />
thermal stability of amorphous pr silicate high-k<br />
layers on Si(001) was evaluated in view of complementary<br />
metal-oxide-semiconductor transistor processing<br />
requirements. Materials science techniques<br />
prove that no crystallization, no phase separation<br />
into Sio 2 and pr 2 o 3 , and no pr silicide formation at the<br />
interface occur after 1 min rapid thermal annealing<br />
treatment in n 2 over the temperature range from 600<br />
to 900 °C. electrical measurements confirm within<br />
this thermal budget well-behaved characteristics<br />
with k values between 11 and 13 and leakage currents<br />
about three orders of magnitude lower than in case of<br />
Sion reference layers.<br />
(27) involvement of iron-Phosphorus<br />
Complexes in iron Gettering for N-Type<br />
Silicon<br />
t. Mchedlidze, M. Kittler<br />
physica Status Solidi A 203(4), 786 (<strong>2006</strong>)<br />
Mechanisms for phosphorus (p) diffusion gettering<br />
(pDG) for iron are supplemented by possible formation<br />
of iron-phosphorus complexes in heavy p-doped<br />
region. existence of such complexes was recently<br />
reported based on the results of electron-spin resonance<br />
investigations. DltS measurements suggest a<br />
high probability for the formation of iron-phosphorus<br />
complexes in n-type silicon in the presence of vacancies<br />
and / or vacancy-phosphorus pairs. on the other<br />
hand, recent theoretical calculations predict formation<br />
of negatively charged vacancy-phosphorus pairs<br />
in the heavily p-doped region of silicon during pDG.<br />
these facts indicate on possibility to explain the high<br />
efficiency of the pDG process for iron by assuming<br />
formation of iron-phosphorus complexes in the heavy<br />
p-doped region of silicon. possible advantages of<br />
application of hydrogen or nitrogen assisted pDG are<br />
considered.<br />
(28) Structural and optical Properties of<br />
Si / Sio 2 Multi-Quantum Wells<br />
t. Mchedlidze, t. Arguirov, M. Kittler,<br />
R. Roelver, B. Berghoff, M. Foerst and<br />
B. Spangenberg<br />
physica e available online (<strong>2006</strong>)<br />
Structural and optical properties of Si / Sio 2 multiquantum<br />
wells (MQW) were investigated by means<br />
of Raman scattering and photoluminescence (pl)<br />
spectroscopy. the MQW structures were fabricated<br />
on a quartz substrate by remote plasma enhanced<br />
chemical vapour deposition (RpeCVD) of alternating<br />
amorphous Si and Sio 2 layers. After layer deposition<br />
the samples were subjected to heat treatments, i.e.<br />
rapid thermal annealing (RtA) and furnace annealing.<br />
Distinct pl signatures of confined carriers evidenced<br />
formation of Si-nanocrystals (nc-Si) in annealed samples.<br />
Analyses of Raman spectra also show presence<br />
of nc-Si phase along with amorphous-Si (a-Si) phase<br />
in the samples. the strong influence of the annealing<br />
parameters on the formation of nc-Si phase suggests<br />
broad possibilities in engineering MQW with various<br />
optical properties. Interestingly, conversion of the<br />
a-Si phase to the nc-Si phase saturates after certain<br />
time of furnace annealing. on the other hand, thinner<br />
Si layers showed a disproportionately lower crystalline<br />
volume fraction. From the obtained results we could<br />
assume that an interface strain prevents full crystallization<br />
of the Si layers and that the strain is larger for<br />
thinner Si layers. the anomalous dependence of nc-<br />
Si Raman scattering peak position on deposited layer<br />
thickness observed in our experiments also supports<br />
the above assumption.
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(29) Atomically Controlled Processing for<br />
Group iV Semiconductors by Chemical<br />
Vapor Deposition<br />
J. Murota, M. Sakuraba, B. tillack<br />
Japanese Journal of Applied physics pt. 1<br />
45(9a), 6767 (<strong>2006</strong>)<br />
one of the main requirements for Si-based ultrasmall<br />
devices is atomic-order control of process technology.<br />
Here we show the concept of atomically controlled<br />
processing for group IV semiconductors based on<br />
atomic-order surface reaction control. By ultraclean<br />
low-pressure chemical vapor deposition using SiH 4<br />
and GeH 4 gases, high-quality low-temperature epitaxial<br />
growth of Si, Ge, and Si 1-x Ge x with atomically flat<br />
surfaces and interfaces on Si(100) is achieved, and<br />
atomic-order surface reaction processes on group<br />
IV semiconductor surface are formulated based on<br />
a langmuir-type surface adsorption and reaction<br />
scheme. In in-situ doped Si 1-x Ge x epitaxial growth<br />
on the (100) surface in a SiH 4 –GeH 4 –dopant (pH 3 , or<br />
B 2 H 6 or SiH 3 CH 3 )–H 2 gas mixture, the deposition rate,<br />
the Ge fraction and the dopant concentration are<br />
explained quantitatively assuming that the reactant<br />
gas adsorption / reaction depends on the surface site<br />
material and that the dopant incorporation in the<br />
grown film is determined by Henry‘s law. Self-limiting<br />
formation of 1–3 atomic layers of group IV or related<br />
atoms in the thermal adsorption and reaction of<br />
hydride gases on Si(100) and Ge(100) is generalized<br />
based on the langmuir-type model. Si or SiGe epitaxial<br />
growth over n, p or B layer already-formed on<br />
Si(100) or SiGe(100) surface is achieved. Furthermore,<br />
the capability of atomically controlled processing<br />
for advanced devices is demonstrated. these results<br />
open the way to atomically controlled technology for<br />
ultralarge-scale integrations.<br />
(30) Effect of Fluorine on the Activation and<br />
Diffusion behaviour of boron implanted<br />
Preamorphized Silicon<br />
S. paul, W. lerch, B. Colombeau, n.e.B Covern,<br />
F. Christiano, S. Bonelli, D. Bolze<br />
Journal of Vacuum Science and technology B<br />
24(1), 437 (<strong>2006</strong>)<br />
In this study we investigated the effect of position<br />
and dose of a separate fluorine coimplant on the<br />
activation and diffusion behavior of germanium<br />
preamorphized boron implants. Germanium preamorphized<br />
silicon was implanted with boron, and fluorine<br />
was subsequently implanted with different energies<br />
and doses to place it either at the projected range<br />
of the boron implant, or between the boron profile<br />
and the amorphous-crystalline interface, or at this<br />
interface. the wafers were spike annealed at temperatures<br />
ranging from 950 to 1050 °C. In terms of<br />
sheet resistance it was found that the superposition<br />
of B and F profiles leads to decreased activation compared<br />
to the wafers without any F implant. Increased<br />
boron activation is seen for all the other cases with<br />
the biggest effects for the highest fluorine dose. the<br />
positioning of F either between the boron projected<br />
range and the end of range (eoR) or at the eoR leads<br />
to more box-shaped boron profiles with shallower<br />
junction depth than the reference wafer.<br />
(31) Protecting Privacy in E-Cash Schemes by<br />
Securing Hidden identity Approaches<br />
against Stochastic Attacks<br />
K. piotrowski, p. langendörfer, o. Maye,<br />
Z. Dyka<br />
Internet Research emerald 16(2), 159 (<strong>2006</strong>)<br />
to enhance security and privacy of e-cash systems<br />
that apply revocable anonymity by presenting a statistical<br />
attack that reveals the hidden ID and suitable<br />
protection means against this kind of attack.<br />
(32) Quantum Theory for ac-Admittance<br />
p.n. Racec, u. Wulf<br />
Materials Science and engineering C 26,<br />
876-880 (<strong>2006</strong>)<br />
Starting from a mean field calculation for the static<br />
capacitance of a MIS-nanostructure with a near back<br />
gate [p.n. Racec, e.R. Racec and u. Wulf, phys. Rev. B<br />
65, 193314, (2002)] we develop an approach to determine<br />
its ac-admittance. Mainly because of the interaction<br />
with the near back gate the inversion electron<br />
layer which forms in the considered MIS-nanostructure<br />
assumes on open character which is taken into<br />
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account in the landauer–Büttiker formalism. For the<br />
Coulomb interaction the Hartree approximation is<br />
applied. In quantitative agreement with experiments<br />
a characteristic step in the static C–V trace results<br />
when the inversion layer is populated from the back<br />
gate. We found that this characteristic step is dominated<br />
by a particular resonance which we call intermediate<br />
resonance. Consistent with our static calculations<br />
we determine the density–density correlation<br />
function in the random phase approximation to find<br />
the ac-admittance. As an example we demonstrate<br />
that the lifetime of the static resonance induces a<br />
characteristic turnover frequency for the ac-admittance.<br />
An equivalent small-signal circuit is proposed<br />
and the dependence of its elements (capacitance and<br />
resistance) on the working point for low and high frequencies<br />
are presented.<br />
(33) Small-Signal Circuit Elements of MiS-Type<br />
Nanostructures<br />
p.n. Racec, u. Wulf<br />
Solid State phenomena 121-123, 549 (<strong>2006</strong>)<br />
Starting from a mean field calculation for the static<br />
capacitance of a MIS-nanostructure with a near<br />
back gate [p.n. Racec, e.R. Racec and u. Wulf, phys.<br />
Rev. B 65, 193314, (2002)] we develop an approach<br />
to determine the equivalent small-signal circuit. the<br />
analyzed system has an open character, taken into account<br />
in the landauer-Büttiker formalism. the Coulomb<br />
interaction is treated in Hartree approximation.<br />
Consistent with our static calculation we determine<br />
the charge-charge correlation function in the random<br />
phase approximation to find the ac-admittances.<br />
the small-signal circuit consists of a voltage-dependent<br />
capacitance and a resistance in series. Beyond<br />
a characteristic frequency V c they become frequency<br />
dependent. the characteristic frequency is given by<br />
the life time of specific resonance which develops in<br />
the system.<br />
(34) Dislocation-induced Light Emission<br />
M. Reiche, M. Kittler, t. Wilhelm, t. Arguirov,<br />
W. Seifert, X. Yu, t. Mchedlidze<br />
eCS transactions 3(7), 311 (<strong>2006</strong>)<br />
Hydrophobic wafer bonding causes the formation of<br />
dislocation networks in the bonded interface. the<br />
structure of the dislocation network depends on<br />
the misorientation between both wafers during the<br />
bonding. the characterization of the dislocation networks<br />
proved that the luminescence depends only on<br />
the structure of the dislocation network. Different<br />
degrees of misorientation cause that different lines<br />
in the pl- and Cl-spectra appear. this makes it possible<br />
to construct monochromatic light sources.<br />
(35) Dopant Diffusion in SiGe:C Alloys<br />
H. Rücker, B. Heinemann, R. Kurps, Y. Yamamoto<br />
eCS transactions 3(7), 1069 (<strong>2006</strong>)<br />
In this paper, we discuss the impact of germanium<br />
and carbon on the diffusion of common dopants in<br />
Si-based alloys. We review results of various diffusion<br />
experiments and discuss the basic physical mechanisms<br />
of the observed changes of diffusion coefficients<br />
as a function of alloy composition. Results of<br />
boron and phosphorus marker layer diffusion experiments<br />
are presented for binary Si 1-x Ge x and Si 1-y C y and<br />
ternary Si 1-x-y Ge x C y alloys.<br />
(36) on the Epitaxy of Twin-Free Cubic (111)<br />
Praseodymium Sesquioxide Films on Si (111)<br />
t. Schroeder, p. Zaumseil, G. Weidner,<br />
Ch. Wenger, J. Dabrowski, H.-J. Müssig,<br />
p. Storck<br />
Journal of Applied physics 99, 014101 (<strong>2006</strong>)<br />
twin-free epitaxial cubic (111) praseodymium sesquioxide<br />
films were prepared on Si(111) by hexagonalto-cubic<br />
phase transition. Synchrotron radiation<br />
grazing incidence x-ray diffraction and transmission<br />
electron microscopy were applied to characterize the<br />
phase transition and the film structure. As-deposited<br />
films grow single crystalline in the (0001)-oriented<br />
hexagonal high-temperature phase of praseodymium<br />
sesquioxide. In situ x-ray diffraction studies deduce<br />
an activation energy of 2.2 eV for the hexagonal-to-cubic<br />
phase transition. transmission electron<br />
microscopy shows that the phase transition is accompanied<br />
by an interface reaction at the oxide / Si(111)<br />
boundary. the resulting cubic (111) low-temperature
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
praseodymium sesquioxide film is single crystalline<br />
and exclusively shows B-type stacking. the 180° rotation<br />
of the cubic oxide lattice with respect to the<br />
Si substrate results from a stacking fault at the substrate<br />
/ oxide boundary.<br />
(37) Standardization of Test Methods of bulk<br />
Microdefects and Denuded Zone in<br />
Annealed CZ Si<br />
R. takada, n. Inoue , K. Moriya, K. Kashima,<br />
K. nakashima, M. Kato, S. Kitagawa, t. ono,<br />
H. uzushido, n. nango and V. Akhmetov<br />
eCS transactions 2(2), 471 (<strong>2006</strong>)<br />
the requirement to standardize measurement methods<br />
for BMD (Bulk Micro Defect) density and DZ<br />
(Denuded Zone) CZ silicon has lead to the establishment<br />
of a SeMI standard for annealed CZ silicon wafers.<br />
therefore, it was decided that we should aim at<br />
standardizing the preferential-etching and 90 degrees<br />
laser-scattering tomography techniques as a<br />
collaborative work between JeItA (Japan electronics<br />
and Information technology Industries Association)<br />
and JSpS (Japan Society of promotion of Science)<br />
145 th Committee. In this work, we carried out a set<br />
of round robin tests and examined whether we could<br />
jointly standardize both the preferential-etching and<br />
the 90 degrees laser-scattering methods. this resulted<br />
in a standardized measurement protocol for BMD<br />
density and DZ width, which has become known as the<br />
JeItA standard eM 3508 [1].<br />
(38) Atomic Layer Processing for Doping of SiGe<br />
B. tillack, Y. Yamamoto, D. Bolze,<br />
B. Heinemann, H. Rücker, D. Knoll, J. Murota,<br />
W. Mehr<br />
thin Solid Films 508(1-2), 279 (<strong>2006</strong>)<br />
Atomic layer processing has been demonstrated for<br />
doping of SiGe during Reduced pressure Chemical Vapour<br />
Deposition (RpCVD) in a commercial single wafer<br />
reactor. Atomic level control of dose and location has<br />
been obtained for B doping using B 2 H 6 and for p doping<br />
using pH 3 . the main idea of atomic layer processing<br />
is the separation of adsorption of the reactant<br />
gases from the deposition process. By this way, self-<br />
limitation has been shown for p doping. By lowering<br />
the temperature for B 2 H 6 exposure (100 °C), the nonself-limiting<br />
character of the B doping process can<br />
be changed to self-limitation. By this manner, very<br />
shallow doping profiles with low sheet resistance<br />
have been obtained, capable for future ultra-shallow<br />
junction applications. p atomic layer doping is shown<br />
to be suitable for the creation of steep and narrow<br />
doping profiles suitable for high-performance pnp<br />
Heterojunction Bipolar transistors (HBts). this result,<br />
together with the already demonstrated usage of B<br />
atomic layer doping for npn HBts, demonstrates the<br />
capability of the atomic layer processing approach for<br />
future devices with critical requirements for dopant<br />
dose and location control.<br />
(39) High Quality Al 2 o 3 / Pr 2 o 3 / Al 2 o 3 MiM<br />
Capacitors for RF Applications<br />
Ch. Wenger, G. lippert, R. Sorge, t. Schroeder,<br />
A.u. Mane, G. lupina, J. Dabrowski,<br />
p. Zaumseil, X. Fan, l. oberbeck,<br />
u. Schröder, H.-J. Müssig<br />
Ieee transactions on electron Devices 53(8),<br />
1937 (<strong>2006</strong>)<br />
the electrical characteristics of layered<br />
Al 2 o 3 / pr 2 o 3 / Al 2 o 3 metal–insulator–metal (MIM) capacitors<br />
for RF device applications are presented for<br />
the first time. this advanced dielectric layer system<br />
4-nm Al 2 Ho 3 / 8-nm pr 2 o 3 / 4-nm Al 2 o 3 shows a high<br />
capacitance density of 5.7 fF / µm 2 , a low leakage current<br />
density of 5 x 10 -9 A / cm 2 at 1 V, and an excellent<br />
dielectric loss behavior over the studied frequency<br />
range.<br />
(40) Chemical Vapor Phase Etching of Polycrystalline<br />
Selective to Epitaxial SiGe<br />
Y. Yamamoto, B. tillack, K. Köpke, o. Fursenko<br />
thin Solid Films 508(1-2), 297 (<strong>2006</strong>)<br />
Combination of nonselective Si / SiGe growth with selective<br />
chemical vapor phase etching of poly-Si / SiGe<br />
was investigated with the aim to create epitaxial<br />
Si / SiGe in a selective manner. Directly after the nonselective<br />
deposition, an HCl vapor phase etching was<br />
performed within the same reactor (RpCVD) at diffe-<br />
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rent process conditions (HCl partial pressure, etching<br />
temperature) to remove the polycrystalline Si / SiGe<br />
selectively to the epitaxial material. Microloading<br />
effect of nonselective SiGe process was ignorable to<br />
that of selective SiGe process. etching rate of poly-<br />
Si / SiGe was higher than that of epitaxial Si / SiGe. We<br />
found that there is a pattern size dependence of the<br />
etching process which becomes smaller by increasing<br />
HCl flow, indicating that high HCl flow condition is<br />
required for uniform epitaxial Si / SiGe thickness. Selectivity<br />
of polycrystalline to epitaxial Si / SiGe becomes<br />
higher with increasing etching temperature. the<br />
selectivity of polycrystalline to epitaxial etching for<br />
SiGe can be improved by adding a thin Si cap layer<br />
which will be partly removed during the etching process.<br />
(41) P Doping Control During SiGe:C Epitaxy<br />
Y. Yamamoto, B. tillack, K. Köpke, R. Kurps<br />
thin Solid Films 508 (1-2), 288 (<strong>2006</strong>)<br />
phosphorus (p) doping during SiGe:C epitaxy by using<br />
reduced pressure chemical vapor deposition (RpCVD)<br />
was investigated with the aim to prevent non-intended<br />
doping and to create steep doping profiles. We<br />
found that p diffusion during cap SiGe:C growth is<br />
not a major cause for p autodoping. the source of p<br />
autodoping is not the reactor but the wafer itself. By<br />
unloading the wafer at < 200 °C in H 2 HF dip treatment<br />
after p-doped SiGe:C layer deposition, p autodoping<br />
was drastically suppressed. this means that the<br />
source layer for p autodoping was partly removed by<br />
the HF treatment. We also found that this layer could<br />
not be removed by in-situ HCl dry etching after p-doped<br />
SiGe:C layer deposition. lowering growth rate of<br />
nondoped cap SiGe:C layer without changing temperature<br />
improves the p autodoping at high p concentration.<br />
By reducing growth temperature from 600 to<br />
550 °C for nondoped SiGe:C cap layer keeping same<br />
growth rate, steepness of p autodoping was improved<br />
from 20.9 nm / dec to 8.7 nm / dec. By reducing<br />
growth temperature further to 500 °C, steepness of<br />
p autodoping is drastically improved to 3.4 nm / dec.<br />
the impact of the growth temperature is indicating<br />
segregation as the main factor for autodoping and<br />
profile steepness. therefore, by reducing growth temperature<br />
for SiGe cap layer deposition, non-intended<br />
p doping could be suppressed resulting in very steep<br />
p profiles applicable for devices with critical doping<br />
profile requirements.<br />
(42) Properties of Dislocation Networks Formed<br />
by Si Wafer Direct bonding<br />
X. Yu, t. Arguirov, M. Kittler, W. Seifert,<br />
M. Ratzke, M. Reiche<br />
Materials Science in Semiconductor<br />
processing 9, 96 (<strong>2006</strong>)<br />
Reproducible formation of well-controlled dislocation<br />
structures is a prerequisite to use dislocations<br />
as an active part of devices. Regular dislocation networks<br />
have been formed at the interface by Si wafer<br />
direct bonding. the barriers of interface were generally<br />
smaller than 100 meV. the temperature dependence<br />
of the electron-beam-induced current (eBIC)<br />
contrast of the interface indicates a deep state density<br />
of a few 10e5 per cm along the dislocation lines<br />
in the network. It is also found that the dislocation<br />
networks in Si can act as effective channel for carrier<br />
transport. photoluminescence (pl) reveals that the<br />
D line spectrum related to the dislocation networks<br />
can be tailored by the bonding misorientation. So,<br />
the D1 line can be made the dominating feature in<br />
the pl spectrum. It is suggested that regular dislocation<br />
networks represent an interesting new nanosystem<br />
for future applications, such as accommodation<br />
biomolecules onto silicon, dislocation-based leD or<br />
buried nanowires.<br />
(43) optimization of Anti-reflective Coatings<br />
for High NA Lithography<br />
J. Bauer, o. Fursenko, S. Virko, B. Kuck,<br />
t. Grabolla, V. Melnik, W. Mehr<br />
proc. 4 th Workshop ellipsometry, 94 (<strong>2006</strong>)<br />
(44) Swing Curve Measurement and Simulation<br />
for High NA Lithography<br />
J. Bauer, u. Haak, K. Schulz, G. old, A. Kraft<br />
proc. Microlithography <strong>2006</strong>, SpIe, Metrology,<br />
Inspection, and process Control for<br />
Microlithography XX, 6152, 1209 (<strong>2006</strong>)
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(45) An Ultra-Wideband Low Power Consumption<br />
Differential Low Noise Amplifier in<br />
SiGe:C biCMoS Technology<br />
p.K. Datta, G. Fischer<br />
proc. Ieee Radio and Wireless Symposium,<br />
RWS ‘06, 107 (<strong>2006</strong>)<br />
(46) An Ultra-Wideband Transceiver Front-End<br />
in SiGe:C biCMoS Technology<br />
p.K. Datta, X. Fan, G. Fischer<br />
proc. <strong>2006</strong> Ieee International Conference<br />
on ultra-Wideband, 167 (<strong>2006</strong>)<br />
(47) A Wireless Communication Platform<br />
for Long-Term Health Monitoring<br />
D. Dietterle, J.-p. ebert, G. Wagenknecht,<br />
R. Kraemer<br />
proc. of the 1 st Ieee International Workshop<br />
on pervasive and ubiquitous Health Care<br />
(ubiCare ‘06), Ieee Computer Society,<br />
474 (<strong>2006</strong>)<br />
(48) bASUMA - Ein körpernahes Funknetzwerk<br />
für Telemonitoring<br />
J.-p. ebert, t. Falck, J. espina<br />
proc. 7. Würzburger Medizintechnik-Kongress<br />
für medizinische Anwendungen im Krankenhaus,technologien-partnerschaftenpraktische<br />
lösungen, abstract (<strong>2006</strong>)<br />
(49) Leakage Current and Dopant Activation in<br />
Ultra-Shallow Junctions Following Millisecond<br />
Anneals Measured by Non-Contact<br />
Junction Photo-Voltage Methods<br />
V.n. Faifer, t.M.H. Wong, M.I.Curent,<br />
D.K. Schroder, p.J. timans, S. McCoy, J. Gelpey,<br />
W. lerch, S. paul, D. Bolze, t. Claryssee,<br />
t. Zangerle, A. Moussa, W. Vandervorst<br />
proc. American Vacuum Society 53rd International Symposium (<strong>2006</strong>)<br />
(50) bASUMA - The Sixth Sense for Chronically<br />
iii Patients<br />
t. Falck, J. espina, J.-p. ebert, D. Dietterle<br />
proc. Body Sensor networks (<strong>2006</strong>)<br />
(51) An integrated Gaussian Modulated Pulse<br />
Generator for Ultra-Wideband Wireless<br />
Localization System<br />
X. Fan, p.K. Datta, G. Fischer<br />
proc. Joint China Japan Microwave Conference,<br />
2, 566 (<strong>2006</strong>)<br />
(52) SiGe:C biCMoS Technologie für 77 GHz<br />
Radaranwendungen<br />
G.G. Fischer<br />
proc. ItG / BMBF Statusseminar “Automobile<br />
Radarsensorik für Fahrerassistenzsysteme”,<br />
VDe Kongress, 1, 349 (<strong>2006</strong>)<br />
(53) Stability Constraints in SiGe Epitaxy<br />
A. Fischer<br />
the Silicon Heterostructure Handbook:<br />
Materials, Fabrication, Devices, Circuits, and<br />
Applications of SiGe and Si Strained layer<br />
epitaxy / ed. J. Cressler, Boca Raton,<br />
CRC press, 127 (<strong>2006</strong>)<br />
(54) Combination of Spectroscopic Ellipsometry<br />
and Reflectometry for Characterization<br />
of Ni Silicide Process<br />
o. Fursenko, D. Bolze, I. Costina, p. Zaumseil,<br />
t. Huelsmann, W. lerch<br />
proc. 4 th Workshop ellipsometry, 133 (<strong>2006</strong>)<br />
(55) A broadband Low Spur Fully integrated<br />
biCMoS PLL for 60 GHz Wireless Applications<br />
S. Glisic, W. Winkler<br />
proc. Ieee Radio and Wireless Symposium -<br />
RWS ‘06, 451 (<strong>2006</strong>)<br />
(56) A 10 GS / s 2 V pp Emitter Follower only<br />
Track and Hold Amplifier in SiGe biCMoS<br />
Technology<br />
S. Halder, S.A. osmany, H. Gustat, B. Heinemann<br />
proc. Ieee International Symposium on<br />
Circuits and Systems (ISCAS ‘06), 4775 (<strong>2006</strong>)<br />
(57) An 8 bit 10 GS / s 2 V pp Track and Hold<br />
Amplifier in SiGe biCMoS Technology<br />
S. Halder, H. Gustat, J.C. Scheytt<br />
proc. eSSCIRC, 416 (<strong>2006</strong>)<br />
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144 A n n u A l R e p o R t 2 0 0 6<br />
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(58) High-Performance biCMoS Technologies<br />
without Epitaxially-buried Subcollectors<br />
and Deep Trenches<br />
B. Heinemann, R. Barth, D. Knoll, H. Rücker,<br />
B. tillack, W. Winkler<br />
Conference Digest of <strong>2006</strong> 3 rd International<br />
SiGe technology and Device Meeting,<br />
IStDM ‘06, 230 (<strong>2006</strong>)<br />
(59) Creation of SiGe Radhard Library<br />
H.-V. Heyer, u. Jagdhold<br />
proc. 1 st International Workshop on Analog<br />
and Mixed Signal Integrated Circuits for<br />
Space Applications, AMICSA (<strong>2006</strong>)<br />
(60) 1.5 µm Emission from a Silicon MoS-LED<br />
based on a Dislocation Network<br />
M. Kittler, M. Reiche, X. Yu, t. Arguirov,<br />
o. Vyvenko, W. Seifert, t. Mchedlidze, G. Jia,<br />
t. Wilhelm<br />
IeDM technical Digest, 845 (<strong>2006</strong>)<br />
(61) A Low-Cost, High-Performance, High-<br />
Voltage Complementary biCMoS Process<br />
D. Knoll, B. Heinemann, K.e. ehwald, A. Fox,<br />
H. Rücker, R. Barth, D. Bolze, t. Grabolla,<br />
u. Haak, J. Drews, B. Kuck, S. Marschmeyer,<br />
H.H. Richter, M. Chaimanee, o. Fursenko,<br />
p. Schley, B. tillack, K. Köpke, Y. Yamamoto,<br />
H.e. Wulf, D. Wolansky<br />
IeDM technical Digest, 607 (<strong>2006</strong>)<br />
(62) industry Examples at State-of-the-Art: iHP<br />
D. Knoll<br />
the Silicon Heterostructure Handbook:<br />
Materials, Fabrication, Devices, Circuits, and<br />
Applications of SiGe and Si Strained layer<br />
epitaxy / ed. J. Cressler, Boca Raton,<br />
CRC press, 321 (<strong>2006</strong>)<br />
(63) Siliziumbasierte Mikroelektronik für die<br />
drahtlose Hochleistungskommunikation<br />
R. Kraemer<br />
proc. Fachtagung Mikroelektronik<br />
“<strong>Microelectronics</strong> on the Move!” im Rahmen<br />
des VDe-Kongresses, 1, 481 (<strong>2006</strong>)<br />
(64) The institute of High Performance<br />
<strong>Microelectronics</strong>: Excellent Research<br />
Environment for PhD. Students and Post Doc<br />
R. Kraemer<br />
Digest of the 4 th Joint Symposium on optoand<br />
Microelectronic Devices and Circuits<br />
(SoDC ‘06), 109 (<strong>2006</strong>)<br />
(65) A Graphical Tool for Specification, Rapid<br />
Prototyping and implementation of<br />
Location based Services<br />
p. langendörfer, S. Adam<br />
proc. Innovations for europe Mobility,<br />
ItG-Fachtagung im Rahmen des<br />
VDe-Kongresses, 1, 53 (<strong>2006</strong>)<br />
(66) Efficient Protection of Mobile Devices by<br />
Cross Layer interaction of Firewall<br />
Approaches<br />
p. langendörfer, M. lehmann, K. piotrowski<br />
proc. 4 th International Conference on Wired /<br />
Wireless Internet Communications<br />
(WWIC <strong>2006</strong>), Springer, lnCS 3970, 155 (<strong>2006</strong>)<br />
(67) on the implementation of a Low-Power<br />
iEEE 802.11a Compliant Viterbi Decoder<br />
K. Maharatna, A. troya, M. Krstic, e. Grass<br />
proc. VlSI Design Conference, 613 (<strong>2006</strong>)<br />
(68) An optical indoor Positioning System for<br />
the Mass Market<br />
o. Maye, J. Schäffner, M. Maaser<br />
proc. of 3 rd Workshop on positioning,<br />
navigation and Communication –<br />
WpnC ‘06, 111 (<strong>2006</strong>)<br />
(69) Nanoelectronics – a Major Driver for Ultra-high<br />
integration and Ulta-high Speed innovations<br />
W. Mehr<br />
proc. of nnFC International Symposium on<br />
nanotechnology, 42 (<strong>2006</strong>)<br />
(70) A Complementary RF-LDMoS Architecture<br />
Compatible with 0.13 µm CMoS Technology<br />
n. Mohapatra, H. Rücker, K.e. ehwald, R. Sorge,<br />
R. Barth, p. Schley, D. Schmidt, H.e. Wulf
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
proc. of the 18 th International Symposium on<br />
power Semiconductor Devices and ICs<br />
(ISpSD ‘06), 37 (<strong>2006</strong>)<br />
(71) Atomically Controlled CVD Technology for<br />
Group iV Semiconductors<br />
J. Murota, M. Sakuraba, B. tillack<br />
<strong>2006</strong> 8 th International Conference on Solid-<br />
State and Integrated Circuit technology<br />
proceedings, 440 (<strong>2006</strong>)<br />
(72) Spike and Flash Annealing of Shallow<br />
Arsenic and Phosphorus implants in<br />
Different Gaseous Ambient<br />
S. paul, W. lerch, S. McCoy, J. Gelpey, D. Bolze<br />
proc. 16 th International Conference in Ion<br />
Implantation technology (IIt ‘06), 109 (<strong>2006</strong>)<br />
(73) How Public Key Cryptography influences<br />
Wireless Sensor Node Lifetime<br />
K. piotrowski, p. langendörfer, S. peter<br />
proc. 4 th ACM Workshop on Security of Ad Hoc<br />
and Sensor networks (SASn ‘06), 169 (<strong>2006</strong>)<br />
(74) A Simple oFDM Physical Layer for Short-<br />
Range High Data Rate Transmission at 60 GHz<br />
M. piz, e. Grass<br />
proc. 11 th International oFDM Workshop<br />
(InoWo ‘06), 303 (<strong>2006</strong>)<br />
(75) Carbon Plasma Etching in Advanced<br />
Semiconductor Technologies<br />
H.H. Richter, K.A. pears, M. Markert,<br />
S. Marschmeyer, S. Günther,<br />
G. Weidner, H. Silz<br />
Verhandlungen der Deutschen physikalischen<br />
Gesellschaft 5, 33 (<strong>2006</strong>)<br />
(76) Single Crystalline Semiconductorinsulator-Semiconductor<br />
Systems by oxide<br />
Engineering and Lattice Matching<br />
Approaches<br />
t. Schroeder, I. Costina, p. Zaumseil, G. lupina,<br />
Ch. Wenger, J. Dabrowski, H.-J. Müssig<br />
proc. 13 th Workshop on oxide electronics,<br />
abstracts book (<strong>2006</strong>)<br />
(77) The iEEE 802.15.3 MAC Protocol Accelerator<br />
for a body Area Sensor Network<br />
H. Shah, D. Dietterle, J.-p. ebert, R. Kraemer<br />
proc. of the 9 th International Symposium on<br />
Wireless personal Communication (WpMC ‘06),<br />
(<strong>2006</strong>)<br />
(78) An implementation Study on Fault-Tolerant<br />
LEoN-3 Processor System<br />
Z. Stamenkovic, C. Wolf, G. Schoof, J. Gaisler<br />
proc. Ip-Based SoC Design Conference, 23<br />
(<strong>2006</strong>)<br />
(79) LEoN-2: General Purpose Processor for a<br />
Wireless Engine<br />
Z. Stamenkovic, C. Wolf, G. Schoof, J. Gaisler<br />
proc. of the <strong>2006</strong> Ieee Workshop on Design<br />
and Diagnostics of electronic Circuits and<br />
Systems, 50 (<strong>2006</strong>)<br />
(80) SoC Design: Engineering or Art<br />
Z. Stamenkovic<br />
proc. 25 th Ieee International Conference on<br />
<strong>Microelectronics</strong>, 401 (<strong>2006</strong>)<br />
(81) A Fully Differential 60 GHz Receiver Front-<br />
End with integrated PLL in SiGe:C biCMoS<br />
Y Sun, S. Glisic, F. Herzel<br />
proc. european Microwave Integrated Circuits<br />
Conference, 198 (<strong>2006</strong>)<br />
(82) An integrated 60 GHz Receiver Front-End in<br />
SiGe:C biCMoS<br />
Y. Sun, l. Wang, J. Borngräber, F. Herzel,<br />
W. Winkler, R. Kraemer<br />
proc. of the 6 th topical Meeting on Silicon<br />
Monolithic Integrated Circuits in RF Systems<br />
(SiRFIC ‘06), 269 (<strong>2006</strong>)<br />
(83) An integrated 60 GHz Transceiver Front-<br />
End for oFDM in SiGe biCMoS<br />
Y. Sun, S. Glisic, M. piz, F. Herzel, K. Schmalz,<br />
e. Grass, W. Winkler, J.C. Scheytt, R. Kraemer<br />
Digest of the 4 th Joint Symposium on optoand<br />
Microelectronic Devices and Circuits<br />
(SoDC ‘06), 93 (<strong>2006</strong>)<br />
A n n u A l R e p o R t 2 0 0 6<br />
145
146 A n n u A l R e p o R t 2 0 0 6<br />
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(84) Atomic Layer Processing for Future Micro-<br />
and Nanotechnology<br />
B. tillack<br />
proc. of the International Symposium on<br />
System Construction of Global-networkoriented<br />
Information electronics, 11 (<strong>2006</strong>)<br />
(85) SiGe:C biCMoS Technologies for High<br />
Frequency Applications<br />
B. tillack, B. Heinemann, D. Knoll, H. Rücker,<br />
G.G. Fischer, W. Winkler, W. Mehr<br />
proc. 2 nd International Workshop on new<br />
Group IV Semiconductor nanoelectronics,<br />
program and abstracts, 1 (<strong>2006</strong>)<br />
(86) Strained SiGe and Si Epitaxy<br />
B. tillack, p. Zaumseil<br />
the Silicon Heterostructure Handbook:<br />
Materials, Fabrication, Devices, Circuits, and<br />
Applications of SiGe and Si Strained layer<br />
epitaxy / ed. J. Cressler, Boca Raton, CRC press,<br />
33 (<strong>2006</strong>)<br />
(87) Transforming Protocol Specifications for<br />
Wireless Sensor Networks into Efficient<br />
Embedded System implementations<br />
G. Wagenknecht, D. Dietterle, J.-p. ebert,<br />
R. Kraemer<br />
proc. 3 rd european Workshop on Wireless<br />
Sensor networks (eWSn), Berlin, Springer,<br />
lnCS 3868, 228 (<strong>2006</strong>)<br />
(88) 77 GHz Automotive Radar Receiver Front-<br />
end in SiGe:C biCMoS Technology<br />
l. Wang, J. Borngräber, W. Winkler<br />
proc. eSSCIRC, 388 (<strong>2006</strong>)<br />
(89) A 0.7-1.4 GHz Variable band Low Noise<br />
Amplifier for Multi-band Applications<br />
l. Wang, W. Winkler, G. Wang, J. Borngräber<br />
proc. 8 th International Conference on Solid-<br />
State and Integrated Circuit technology<br />
proceedings, 1547 (<strong>2006</strong>)<br />
(90) Low Power Frequency Dividers in SiGe:C<br />
biCMoS Technology<br />
l. Wang, Y. Sun, J. Borngräber, A. thiede,<br />
R. Kraemer<br />
proc. of Ieee Mtt-S 6 th topical Meeting on<br />
Silicon Monolithic Integrated Circuits in<br />
RF Systems, 357 (<strong>2006</strong>)<br />
(91) An improved Highly-Linear Low-Power<br />
Down-Conversion Micromixer for 77 GHz<br />
Automotive Radar in SiGe Technology<br />
l. Wang, R. Kraemer, J. Borngräber<br />
proc. Internat. Microwave Symposium (<strong>2006</strong>)<br />
(92) High Quality Layered Pr 2 Ti 2 o 7 / Sio 2 MiM<br />
Capacitor for Mixed-Signal Applications<br />
Ch. Wenger, R. Sorge, t. Schroeder, A.u. Mane,<br />
D. Knoll, J. Dabrowski, H.-J. Müssig<br />
proc. of the 6 th topical Meeting on Silicon<br />
Monolithic Integrated Circuits in RF Systems<br />
(SiRFIC ‚06), 241 (<strong>2006</strong>)<br />
(93) An indoor Localization System based on<br />
DTDoA for Different Wireless LAN<br />
F. Winkler, e. Fischer, e. Grass, p. langendörfer<br />
proc. of 3 rd Workshop on positioning, navigation<br />
and Communication - WpnC ‘06, 117 (<strong>2006</strong>)<br />
(94) Front-End MMiC for Low-Cost 24 GHz Radar<br />
Systems<br />
W. Winkler, J. Borngräber<br />
proc. International Radar Symposium<br />
(IRS ‘06), 145 (<strong>2006</strong>)<br />
(95) A Novel Approach to Self-organized Pattern<br />
Formation of biomelcules at Silicon<br />
Surfaces<br />
A. Wolff, W. Fritzsche, M. Kittler, X. Yu,<br />
M. Reiche, t. Wilhelm, M. Seibt, o. Voß<br />
proc. International Symposium on DnA-Based<br />
nanoscale Integration, 31 (<strong>2006</strong>)<br />
(96) Phosphorus Segregation Control for SiGe:C<br />
Epitaxy<br />
Y. Yamamoto<br />
Conference Digest of <strong>2006</strong> 3 rd International
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
SiGe technology and Device Meeting,<br />
IStDM ‘06, 282 (<strong>2006</strong>)<br />
(97) optical Properties, Elasto-optical Effects,<br />
and Critical-Point Parameters of biaxially<br />
Stressed Si 1-y C y Alloys on Si (001)<br />
St. Zollner, V. Vartanian, J.p. lui, p. Zaumseil,<br />
H.-J. osten, A.A. Demkov, B-Y nguyen<br />
Conference Digest of <strong>2006</strong> 3 rd International<br />
SiGe technology and Device Meeting,<br />
IStDM ‘06, 90 (<strong>2006</strong>)<br />
(98) Design of a Wireless Communication<br />
Platform for body Area Networks<br />
D. Dietterle, G. Wang, J.-p. ebert, R. Kraemer<br />
proc. of WWRF 16 (<strong>2006</strong>)<br />
(99) High Performance SiGe biCMoS Technology<br />
for High Frequency Applications<br />
G.G. Fischer<br />
proc. 36 th european Microwave Conference<br />
(<strong>2006</strong>)<br />
(100) SiGe:C biCMoS Technologien für 77/79 GHz<br />
Automobilradar<br />
G.G. Fischer<br />
GMM-Workshop „Hochfrequenz-Halbleitertechnologien<br />
für Automobilanwendungen“<br />
(<strong>2006</strong>)<br />
(101) SiGe:C biCMoS-Technologien für Mikroelek-<br />
tronik-Anwendungen über 60 GHz<br />
G.G. Fischer<br />
GMM-Workshop Mikroelektronik-Anwendungen<br />
(<strong>2006</strong>)<br />
(102) UWb Transceiver for Data Communication<br />
and indoor Localization<br />
G. Fischer<br />
proc. 36 th european Microwave Conference<br />
(<strong>2006</strong>)<br />
(103) SiGe iCs for the 77 GHz Automotive Radar<br />
S. Glisic, l. Wang<br />
proc. eeefCoM Workshop Hochfrequenztechnik,<br />
Komponenten, Module und eMV (<strong>2006</strong>)<br />
(104) Scalable Low-Power High-Speed biCMoS<br />
ECL Library<br />
H. Gustat<br />
proc. 36 th european Microwave Conference<br />
(<strong>2006</strong>)<br />
(105) Ultra-High Speed A /D and D /A Converters<br />
H. Gustat<br />
proc. 36 th european Microwave Conference<br />
(<strong>2006</strong>)<br />
(106) 60 GHz RF-Frontend for 1 Gbit /s WLAN<br />
Transceiver<br />
F. Herzel<br />
proc. 36 th european Microwave Conference<br />
(<strong>2006</strong>)<br />
(107) impact of Ni Layer Thickness and Anneal<br />
Time on Nickel Silicide Formation by Rapid<br />
Thermal Processing<br />
t. Huelsmann, J. niess, W. lerch, o. Fursenko,<br />
D. Bolze<br />
proc. 14 th Ieee International Conference on<br />
Advanced thermal processing of<br />
Semiconductors (<strong>2006</strong>)<br />
(108) 60 GHz SiGe Transceiver Frontend-iCs für<br />
die drahtlose Nahfeldkommunikation<br />
J.C. Scheytt, Y. Sun, S. Glisic, F. Herzel,<br />
K. Schmalz, e. Grass, W. Winkler, R. Kraemer<br />
proc. eeefCoM Workshop Hochfrequenztechnik,<br />
Komponenten, Module und eMV<br />
(<strong>2006</strong>)<br />
(109) Frequenzagiler Synthesizer und effizienter<br />
Leistungsverstärker für Multi-Standard<br />
basisstationen<br />
J.C. Scheytt<br />
proc. BMBF Statusseminar (<strong>2006</strong>)<br />
(110) High-Performance Mixed-Signal iCs in SiGe<br />
biCMoS Technology<br />
J.C. Scheytt, R. Kraemer<br />
proc. european Microwave Week (<strong>2006</strong>)<br />
A n n u A l R e p o R t 2 0 0 6<br />
147
148 A n n u A l R e p o R t 2 0 0 6<br />
E R S C H i E N E N E P U b L i K A T i o N E N – P U b L i S H E D P A P E R S<br />
(111) An integrated 5 GHz Wideband Quadrature<br />
Modem in SiGe:C biCMoS Technology<br />
K. Schmalz, F. Herzel, M. piz<br />
proc. of the 36 th european Microwave<br />
Conference, 1656 (<strong>2006</strong>)<br />
(112) Radar Circuits and Components<br />
W. Winkler<br />
proc. 36 th european Microwave Conference (<strong>2006</strong>)<br />
(113) A 70 MHz – 4.1 GHz 5 th -order Elliptic gm-C<br />
Low-Pass Filter in Complementary SiGe<br />
Technology<br />
l. Yuan, R. Krithivasan, W.-M.l. Kuo,<br />
l. Xiangtao, J.D. Cressler, H. Gustat,<br />
B. Heinemann<br />
proc. of the Ieee Bipolar / BiCMoS Circuits<br />
and technology Meeting, BCtM ‘06, 4.3.1.<br />
(<strong>2006</strong>)<br />
(114) 60 GHz Demonstrator in 0.25 µm SiGe:C<br />
biCMoS Technology<br />
e. Grass, M. piz, F. Herzel, K. Schmalz, Y. Sun,<br />
S. Glisic, K. tittelbach-Helmrich<br />
proc. Ieee 802.15 Meeting, Document<br />
number: Ieee 802.15-06 / 0320r0 (<strong>2006</strong>)<br />
(115) Protocol integration of 60 GHz PHY<br />
e. Grass, K. tittelbach-Helmrich, D. Dietterle,<br />
J.-p. ebert, R. Kraemer<br />
proc. Ieee 802.15 Meeting, Doc.no:<br />
Ieee 802.12-06 / 0127r0 (<strong>2006</strong>)<br />
(116) NEPP: Negotiation Enhancements for<br />
Privacy Policies<br />
M. Maaser, S. ortmann, p. langendörfer<br />
proc. W3C Workshop on languages for privacy<br />
policy negotiation and Semantics-Driven<br />
enforcement (<strong>2006</strong>)<br />
(117) 60 GHz Channel Measurements for “Video<br />
Supply in Trains, busses and Aircraft”<br />
Scenario<br />
M. peter, W. Keusgen, e. Grass<br />
proc. Ieee 802.15 Meeting, Document<br />
number: Ieee 802.15-06 / 0476r0 (<strong>2006</strong>)<br />
Eingeladene Vorträge<br />
invited Presentations<br />
(1) biomolecular Sensing - and Potential<br />
Contributions from <strong>Microelectronics</strong><br />
M. Birkholz<br />
technische Fachhochschule Wildau,<br />
January 26, <strong>2006</strong>, Germany<br />
(2) Körpernahe Funknetze zur Fernüberwachung<br />
des Gesundheitszustandes von<br />
Patienten<br />
D. Dietterle<br />
Gauss-Woche, Frankfurt (oder),<br />
April 07, <strong>2006</strong>, Germany<br />
(3) bASUMA - body Area System for Ubiquitous<br />
Multimedia Applications<br />
J.-p. ebert<br />
5. Schloß Steinhöfel Seminar of GI RGB and<br />
German Chapter of ACM, Fürstenwalde,<br />
April, <strong>2006</strong>, Germany<br />
(4) bASUMA - Ein körpernahes Funknetzwerk<br />
für Telemonitoring<br />
J.-p. ebert, t. Falck, J. espina<br />
7. Würzburger Medizintechnik-Kongress für<br />
medizinische Anwendungen im Krankenhaus,<br />
technologien-partnerschaften-praktische<br />
lösungen, Würzburg,<br />
Mai 14-17, <strong>2006</strong>, Germany<br />
(5) Drahtlose Kommunikation in eingebetteten<br />
Automobilsystemen - Stand und Vision der<br />
Funktechnik für den Einsatz in Fahrzeugen<br />
J.-p. ebert<br />
Die Zuliefermesse: 7. Internationale Fachmesse<br />
für teile, Module, Komponenten und<br />
technologien, leipzig, June, <strong>2006</strong>, Germany<br />
(6) SiGe:C biCMoS Technologien für 77/79 GHz<br />
Automobilradar<br />
G.G. Fischer<br />
GMM-Workshop „Hochfrequenz-Halbleitertechnologien<br />
für Automobilanwendungen“,<br />
München, June 22, <strong>2006</strong>, Germany
E i N G E L A D E N E V o R T R Ä G E – i N V i T E D P R E S E N T A T i o N S<br />
(7) UWb Transceiver Architecture for Robust<br />
Location Determination<br />
G. Fischer, J.C. Scheytt, R. Kraemer<br />
Ieee International Microwave Symposium<br />
Ieee-Mtt-S, Workshop WMA, San Francisco,<br />
June 11-16, <strong>2006</strong>, uSA<br />
(8) Ultra-Wide band Transceiver für indoor<br />
Lokalisierung und Datenkommunikation<br />
G. Fischer<br />
Workshop Analog Integrated Circuits,<br />
tu Kaiserslautern, March 13, <strong>2006</strong>, Germany<br />
(9) broadband Wireless Communication at<br />
60 GHz: Systems, Circuits and Technologies<br />
e. Grass, M. piz, F. Herzel, K. Schmalz, Y. Sun,<br />
S. Glisic, M. Krstic, K. tittelbach-Helmrich,<br />
M. ehrig, W. Winkler, R, Kramer, J.C. Scheytt<br />
Workshop “From Research to Innovation”,<br />
Szczecin, May 17-19, <strong>2006</strong>, poland<br />
(10) High-Performance biCMoS Technologies<br />
without Epitaxially-buried Subcollectors<br />
and Deep Trenches<br />
B. Heinemann, R. Barth, D. Knoll, H. Rücker,<br />
B. tillack, W. Winkler<br />
<strong>2006</strong> 3 rd International SiGe technology and<br />
Device Meeting, IStDM <strong>2006</strong>, princeton,<br />
May 15-17, <strong>2006</strong>, uSA<br />
(11) Analytical Modeling of the interaction of<br />
Vacancies and oxygen for oxide Precipita-<br />
tion in RTA Treated Silicon Wafers<br />
G. Kissinger, J. Dabrowski, A. Sattler,<br />
C. Seuring, t. Müller, H. Richter, W. von Ammon<br />
10 th International Symposium on Silicon<br />
Materials, Science, and technology<br />
(Semiconductor Silicon <strong>2006</strong>), Denver,<br />
May 07-12, <strong>2006</strong>, uSA<br />
(12) Dislocations in Solar Silicon:<br />
Electrical Activity<br />
M. Kittler<br />
nordic Workshop on Crystalline Si Solar Cells,<br />
oslo, January 23-24, <strong>2006</strong>, norway<br />
(13) iR-Emitter auf Si-basis<br />
M. Kittler<br />
ISF Hameln, Institutsseminar, Hameln,<br />
november 21, <strong>2006</strong>, Germany<br />
(14) Regular Dislocation Networks in Silicon<br />
M. Kittler<br />
SoIteC, Bernin, June 26, <strong>2006</strong>, France<br />
(15) Regular Dislocation Networks in Silicon as<br />
a Tool for Novel Device Application<br />
M. Kittler, M. Reiche, W. Seifert, X. Yu,<br />
t. Arguirov, o.F. Vyvenko, t. Mchedlidze,<br />
t. Wilhelm<br />
210 th eCS Meeting, Symposium ‚High purity<br />
Silicon 9‘, Cancun,<br />
october 29 - november 03, <strong>2006</strong>, Mexico<br />
(16) Silicon Nanostructures for iR Light<br />
Emitters<br />
M. Kittler, t. Arguirov, W. Seifert, X. Yu, G. Jia,<br />
o.F. Vyvenko, t. Mchedlidze, M. Reiche,<br />
t. Wilhelm, J. Sha, D. Yang<br />
e-MRS Spring Meeting <strong>2006</strong>, Symposium A:<br />
Current trends in nanoscience, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(17) Automatisierungstechnik<br />
R. Kraemer<br />
BMBF-Workshop „Kommunikationstechnolo-<br />
gien für das Internet der Dinge“, Köln,<br />
September 22, <strong>2006</strong>, Germany<br />
(18) Car-to-Car-Kommunikation<br />
R. Kraemer<br />
technologietag Mitteldeutschland, Dresden,<br />
november 08, <strong>2006</strong>, Germany<br />
(19) Gigabit Wireless Communication based on<br />
integrated 60 GHz biCMoS Frontend<br />
R. Kraemer<br />
1. Informatik-Kooperationsworkshop,<br />
Btu Cottbus, october 20, <strong>2006</strong>, Germany<br />
A n n u A l R e p o R t 2 0 0 6<br />
149
150 A n n u A l R e p o R t 2 0 0 6<br />
E i N G E L A D E N E V o R T R Ä G E – i N V i T E D P R E S E N T A T i o N S<br />
(20) Kommunikations- und Sicherungsverfahren<br />
für eingebettete Systeme<br />
R. Kraemer<br />
Symposium „Moderne Ausbildungsmethoden<br />
und Simulation“, Dresden,<br />
March 21 - 22, <strong>2006</strong>, Germany<br />
(21) Sensornetze im medizinischen Umfeld<br />
R. Kraemer<br />
3 rd leibniz Conference of Advanced Science,<br />
lichtenwalde, october 12 - 14, <strong>2006</strong>, Germany<br />
(22) Siliziumbasierte Mikroelektronik für die<br />
drahtlose Hochleistungskommunikation<br />
R. Kraemer<br />
Fachtagung Mikroelektronik „<strong>Microelectronics</strong><br />
on the Move!“ im Rahmen des VDe-Kongresses<br />
<strong>2006</strong>, Aachen, october 24 - 25, <strong>2006</strong>, Germany<br />
(23) System and Circuit Research in iHP<br />
R. Kraemer<br />
4 th Joint Symposium on opto- and Microelectronic<br />
Devices and Circuits (SoDC <strong>2006</strong>),<br />
Duisburg, September 03 - 08, <strong>2006</strong>, Germany<br />
(24) Verfahren zur ultraschnellen drahtlosen<br />
Übertragung von Daten und deren<br />
Anwendungen<br />
R. Kraemer<br />
Ringvorlesung „Das Internet und seine Anwendungen<br />
(IV)“, Btu Cottbus,<br />
May 09, <strong>2006</strong>, Germany<br />
(25) Advanced dielectrics for highly scaled<br />
DRAM applications: The example of<br />
( Pr 2 o 3 ) 1-x (Al 2 o 3 ) x mixed oxide systems<br />
on TiN<br />
G. lippert, H.-J. Müssig<br />
Infineon Workshop on Dielectric Materials for<br />
DRAM applications, Dresden,<br />
March 16, <strong>2006</strong>, Germany<br />
(26) PrAlo 3 -based M-i-M Structures for<br />
Advanced DRAM Applications<br />
G. lippert<br />
external Collaboration Workshop, Qimonda,<br />
Dresden, September 07, <strong>2006</strong>, Germany<br />
(27) Development of 0.13 µm Shallow Trench<br />
Etch Process<br />
S. Marschmeyer<br />
AMAt Workshop etch Customer Workshop,<br />
Dresden, May 10, <strong>2006</strong>, Germany<br />
(28) Rod-like Defects in Silicon: Signatures of<br />
Distinct RLD Structures Detected by<br />
Various Measurement Methods<br />
t. Mchedlidze, t. Arguirov, G. Jia, M. Kittler<br />
International Conference on extended Defects<br />
in Semiconductors, eDS <strong>2006</strong>, Halle,<br />
September 17-22, <strong>2006</strong>, Germany<br />
(29) Nanoelectronics – a Major Driver for Ultra-high<br />
integration and Ulta-high Speed innovations<br />
W. Mehr<br />
nnFC International Symposium on<br />
nanotechnology, Daejeon City,<br />
March <strong>2006</strong>, Republic of Korea<br />
(30) Science to the Market – SiGe:C Technology<br />
and RF Circuits and Systems for Mobile<br />
Communication<br />
W. Mehr<br />
Workshop From Research to Innovation,<br />
Szczecin, May 17-19, <strong>2006</strong>, poland<br />
(31) SiGe biCMoS Technologies for RF Mixed<br />
Signal Circuits-Technology, Design Kit and<br />
Circuit iPs<br />
W. Mehr<br />
Mentor Workshop, Frankfurt / Main,<br />
oktober, <strong>2006</strong>, Germany<br />
(32) SiGe RF Mixed Signal Circuits and Technologies<br />
– New Developments and Perspectives<br />
(1 Gbit / s, LP Sensor Networks and Fiber<br />
optics)<br />
W. Mehr<br />
tFH Wildau, December, <strong>2006</strong>, Germany
E i N G E L A D E N E V o R T R Ä G E – i N V i T E D P R E S E N T A T i o N S<br />
(33) Atomically Controlled Processing for Future<br />
Si-based Devices<br />
J. Murota, M. Sakuraba, B. tillack<br />
<strong>2006</strong> Advanced Research Workshop Future<br />
trends in <strong>Microelectronics</strong>: up the nano Creek,<br />
Crete, June 26-30, <strong>2006</strong>, Greece<br />
(34) Welche Rolle spielen neue dielektrische<br />
Materialien in der Mikroelektronik?<br />
H.-J. Müssig<br />
Akademisches Festkolloquium der Btu<br />
Cottbus, December 12, <strong>2006</strong>, Germany<br />
(35) Dopant Diffusion in SiGeC Alloys<br />
H. Rücker, B. Heinemann, R. Kurps,<br />
Y. Yamamoto<br />
2 nd International SiGe & Ge: Materials,<br />
processing, and Device Symposium, 210 th eCS<br />
Meeting, Cancun,<br />
october 29 - november 03, <strong>2006</strong>, Mexico<br />
(36) High-Performance Mixed-Signal iCs in SiGe<br />
biCMoS Technology<br />
J.C. Scheytt, R. Kraemer<br />
european Microwave Week <strong>2006</strong>, Manchester,<br />
September 10, <strong>2006</strong>, uK<br />
(37) iHP - Technologien und elektrische<br />
Möglichkeiten – Lösungen mit Analog<br />
office<br />
R.F. Scholz<br />
3. AWR Anwendertreffen, München,<br />
october 04, <strong>2006</strong>, Germany<br />
(38) Advanced Dielectrics for Highly Performing<br />
and Functionalized Silicon based iCs<br />
t. Schroeder<br />
MInAteC Winter School electrochemistry for<br />
the Semiconductor Industry, Grenoble,<br />
December 11, <strong>2006</strong>, France<br />
(39) Global and Local Heteroepitaxy Approaches<br />
in Si-based <strong>Microelectronics</strong>: Motivation,<br />
Methods and Materials<br />
t. Schroeder<br />
Surface Science Seminar of the physics<br />
Department of the university of osnabrück,<br />
August, 18, <strong>2006</strong>, Germany<br />
(40) Materials for Si-based Nanoelectronics –<br />
Discoveries and Challenges in Nanospace<br />
t. Schroeder<br />
Hanse-Wissenschafts-Kolloquium,<br />
Delmenhorst, August 16, <strong>2006</strong>, Germany<br />
(41) Single Crystalline Heteroepitaxial<br />
Semiconductor-insulator-Semiconductor<br />
Systems on Si(111)<br />
t. Schroeder<br />
eSRF experimental Division Meeting, Grenoble,<br />
May 23, <strong>2006</strong>, France<br />
(42) Ultra-Thin Dielectric Films for Si based<br />
Nanoelectronic Device Technology<br />
t. Schroeder<br />
5 th International Workshop on Surfaces and<br />
Interfaces, university of Marseille,<br />
February 01-03, <strong>2006</strong>, France<br />
(43) SoC Design: Engineering or Art<br />
Z. Stamenkovic<br />
25 th Ieee International Conference on<br />
<strong>Microelectronics</strong>, nis, May 14-17, <strong>2006</strong>, Serbia<br />
(44) Atomic Layer Processing for Future<br />
Micro- and Nanotechnology<br />
B. tillack<br />
System Construction of Global-networkoriented<br />
Information electronics, Sendai,<br />
January 31 - February 01, <strong>2006</strong>, Japan<br />
(45) SiGe:C biCMoS Technologies for High<br />
Frequency Applications<br />
B. tillack, B. Heinemann, D. Knoll, H. Rücker,<br />
G.G. Fischer, W. Winkler, W. Mehr<br />
2 nd International Workshop on new Group IV<br />
Semiconductor nanoelectronics, Sendai,<br />
october 02, <strong>2006</strong>, Japan<br />
A n n u A l R e p o R t 2 0 0 6<br />
151
152 A n n u A l R e p o R t 2 0 0 6<br />
E i N G E L A D E N E V o R T R Ä G E – i N V i T E D P R E S E N T A T i o N S<br />
(46) SiGe:C biCMoS Technologies for High Speed<br />
Applications<br />
B. tillack<br />
etRI, Daejeon,<br />
March 16, <strong>2006</strong>, Republic of Korea<br />
(47) SiGe:C biCMoS Technologies for High Speed<br />
Applications<br />
B. tillack<br />
ntu – national taiwan university,<br />
March 21, <strong>2006</strong>, taiwan<br />
(48) SiGe:C biCMoS Technologies for High Speed<br />
Applications<br />
B. tillack<br />
nagoya university, nagoya,<br />
December 16, <strong>2006</strong>, Japan<br />
(49) The Running 0.25 µm Technology as the<br />
0.13 µm biCMoS, which is under<br />
Development<br />
B. tillack<br />
CIC – Chip implementation Center taiwan,<br />
March 20, <strong>2006</strong>, taiwan<br />
(50) Millimeter-wave integrated Cicruits in<br />
SiGe:C biCMoS Technology<br />
W. Winkler<br />
uMC taiwan, March 21, <strong>2006</strong>, Hsinchu, taiwan<br />
(51) Millimeter-wave integrated Cicruits in<br />
SiGe:C biCMoS Technology<br />
W. Winkler<br />
tSMC, Hsinchu, March 20, <strong>2006</strong>, taiwan<br />
(52) Millimeter-wave integrated Cicruits in<br />
SiGe:C biCMoS Technology<br />
W. Winkler<br />
national taiwan university, taipei,<br />
March 21, <strong>2006</strong>, taiwan<br />
(53) Millimeter-wave integrated Cicruits in<br />
SiGe:C biCMoS Technology<br />
W. Winkler<br />
Chip Implementation Center taipei,<br />
March 20, <strong>2006</strong>, taiwan<br />
Vorträge<br />
Presentations<br />
(1) Determination of Low Concentrations of N<br />
and C in CZ-Si by Precise FTiR Spectroscopy<br />
V.D. Akhmetov, H. Richter, n. Inoue<br />
e-MRS <strong>2006</strong> Spring Meeting, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(2) Determination of Nitrogen in Thin CZ-Si<br />
Wafers by Means of High Sensitive FTiR<br />
Spectroscopy<br />
V.D. Akhmetov, H. Richter<br />
All-Russian Meeting „Silicon <strong>2006</strong>“,<br />
Krasnojarsk, July 04-06, <strong>2006</strong>, Russia<br />
(3) FTiR-Messungen an MQW<br />
V.D. Akhmetov<br />
BMBF-projekt-treffen „Bandstrukturdesign:<br />
ladungsträgertransport in Si-basierten<br />
Quantenstrukturen für zukünftige<br />
Höchsteffizienz-Solarzellen“, Cottbus,<br />
october 18- 20, <strong>2006</strong>, Germany<br />
(4) iR Spectroscopy of Carbon and boron States<br />
in Highly Doped SiGe:C(b) Layers<br />
V.D. Akhmetov, H. Richter<br />
All-Russian Meeting „Silicon <strong>2006</strong>“,<br />
Krasnojarsk, July 04-06, <strong>2006</strong>, Russia<br />
(5) Nitrogen in Thin Silicon Wafers Determined<br />
by Vibrational FTiR Spectroscopy with<br />
Enhanced Sensitivity<br />
V.D. Akhmetov, H. Richter<br />
44. Arbeitskreis „punktdefekte“ Combined<br />
with CADReS expert Group Meeting, Dresden,<br />
March 23-25, <strong>2006</strong>, Germany<br />
(6) Precise FTiR Spectroscopy of Carbon and<br />
boron in Thin SiGe:C(b) Layers<br />
V.D. Akhmetov, H. Richter<br />
44. Arbeitskreis „punktdefekte“ Combined<br />
with CADReS expert Group Meeting, Dresden,<br />
March 23-25, <strong>2006</strong>, Germany
(7) Practical Scalable and Statistical Modeling<br />
of SiGe HbT‘s<br />
B. Ardouin, R.F. Scholz, G.G. Fischer, D. Knoll<br />
HICuM Workshop <strong>2006</strong>, Heilbronn,<br />
June 12, <strong>2006</strong>, Germany<br />
(8) Effect of Mechanical Stress in Nanocrystalline<br />
Si / Sio 2 Multiple Quantum Wells<br />
t. Arguirov, t. Mchedlidze, M. Kittler, R. Rölver,<br />
M. Först, o. Winkler, B. Spangenberg<br />
International Conference on extended Defects<br />
in Semiconductors, eDS <strong>2006</strong>, Halle,<br />
September 17-22, <strong>2006</strong>, Germany<br />
(9) Photoluminescence Study on Defects in<br />
Multicrystalline Silicon<br />
t. Arguirov, G. Jia, W. Seifert, M. Kittler<br />
International Conference on Beam Injection<br />
Assessment of Microstructures in Semiconductors<br />
(BIAMS <strong>2006</strong>), St. petersburg,<br />
June 11-15, <strong>2006</strong>, Russia<br />
(10) Raman-Untersuchungen von mechanischen<br />
Spannungen in MQW<br />
t. Arguirov, t. Mchedlidze, M. Kittler<br />
BMBF-projekt-treffen „Bandstrukturdesign:<br />
ladungsträgertransport in Si-basierten<br />
Quantenstrukturen für zukünftige Höchsteffizienz-Solarzellen“,<br />
Cottbus,<br />
october 18- 20, <strong>2006</strong>, Germany<br />
(11) Towards Silicon based Light Emitters<br />
Utilising the Radiation from Dislocation<br />
Networks<br />
t. Arguirov, M. Kittler, W. Seifert, X. Yu<br />
e-MRS Spring Meeting <strong>2006</strong>, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(12) ARC and Swing optimization for High-NA<br />
Photolithography<br />
J. Bauer<br />
4 th IISB lithography Simulation Workshop,<br />
Hersbruck, September 29, <strong>2006</strong>, Germany<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(13) optimization of Anti-reflective Coatings<br />
for High NA Lithography<br />
J. Bauer, o. Fursenko, S. Virko, B. Kuck,<br />
t. Grabolla, V. Melnik, W. Mehr<br />
4 th Workshop ellipsometry, Berlin,<br />
February 20-22, <strong>2006</strong>, Germany<br />
(14) Swing Curve Measurement and Simulation<br />
for High NA Lithography<br />
J. Bauer, u. Haak, K. Schulz, G. old, A. Kraft<br />
SpIe International Symposium on Microlithography<br />
<strong>2006</strong>, San Jose,<br />
February 19-24 <strong>2006</strong>, uSA<br />
(15) beiträge der Materialforschung für die<br />
Entwicklung der Fotovoltaik<br />
M. Birkholz<br />
lehrprobevortrag im Habilitationsverfahren<br />
an der Btu Cottbus, June 28, <strong>2006</strong>, Germany<br />
(16) GiD and GiSAXS Characterization of biomolecules<br />
on Semiconductors<br />
M. Birkholz, I. Zizak, n. Darowski, I. Wallat,<br />
p. Zaumseil, M. Kittler, M. p. Heyn<br />
Bessy nutzertreffen, Berlin,<br />
December 07-08, <strong>2006</strong>, Germany<br />
(17) Small-Angle X-Ray Reciprocal Space<br />
Mapping of Surface Relief Gratings<br />
M. Birkholz, p. Zaumseil, J. Bauer, D. Bolze,<br />
G. Weidner<br />
e-MRS Spring Meeting, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(18) Structure of biomembrane-on-Silicon<br />
Hybrids Derived From X-Ray Reflectometry<br />
M. Birkholz, p. Zaumseil, M. Kittler, I. Wallat,<br />
M. Heyn<br />
e-MRS <strong>2006</strong> Spring Meeting, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(19) The Evolution of Structural Properties<br />
During the Growth of Thin Films<br />
M. Birkholz<br />
A n n u A l R e p o R t 2 0 0 6<br />
153
Wissenschaftlicher Vortrag im Habilitationsverfahren<br />
an der Btu Cottbus,<br />
november 24, <strong>2006</strong>, Germany<br />
(20) A 20 GSample /s, 40 mW SiGe HbT<br />
Comparator for Ultra-High-Speed ADC<br />
Y. Borokhovych, H. Gustat<br />
2 nd International SiGe & Ge: Materials,<br />
processing, and Device Symposium, 210 th eCS<br />
Meeting, Cancun,<br />
october 29 - november 03, <strong>2006</strong>, Mexico<br />
(21) Ab initio Atomistic Calculations for CMoS<br />
Technology Development<br />
J. Dabrowski<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(22) Ab initio Calculations for CMoS Technology<br />
Developments<br />
J. Dabrowski<br />
Workshop From Research to Innovation,<br />
Szczecin, May 17-19, <strong>2006</strong>, poland<br />
(23) Charge States of Native Point Defects in<br />
Pr-based High-k Dielectrics<br />
J. Dabrowski, A. Fleszar, G. lupina, G. lippert,<br />
A.u. Mane, Ch. Wenger<br />
DpG Frühjahrstagung Dresden,<br />
March 27-31, <strong>2006</strong>, Germany<br />
(24) Ti at interfaces between Si and High-k Films<br />
J. Dabrowski<br />
DpG Frühjahrstagung Dresden,<br />
March 27-31, <strong>2006</strong>, Germany<br />
(25) An Ultra-Wideband Low Power Consumption<br />
Differential Low Noise Amplifier in<br />
SiGe:C biCMoS Technology<br />
p.K. Datta, G. Fischer<br />
Ieee Radio and Wireless Symposium, RWS <strong>2006</strong>,<br />
San Diego, January 17-19, <strong>2006</strong>, uSA<br />
154 A n n u A l R e p o R t 2 0 0 6<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(26) An Ultra-Wideband Transceiver Front-End<br />
in SiGe:C biCMoS Technology<br />
p.K. Datta, X. Fan, G. Fischer<br />
<strong>2006</strong> International Conference on ultra-<br />
Wideband, Waltham,<br />
September 24-27, <strong>2006</strong>, uSA<br />
(27) A Wireless Communication Platform for<br />
Long-Term Health Monitoring<br />
D. Dietterle, G. Wagenknecht, J.-p. ebert,<br />
R. Kraemer<br />
1 st Ieee International Workshop on pervasive<br />
and ubiquitous Health Care (ubiCare <strong>2006</strong>),<br />
pisa, March 13, <strong>2006</strong>, Italy<br />
(28) Design of a Wireless Communication<br />
Platform for body Area Networks<br />
D. Dietterle, G. Wang, J.-p. ebert, R. Kraemer<br />
WWRF 16, Shanghai, April 26-28, <strong>2006</strong>, China<br />
(29) bASUMA - A body Sensor System for<br />
Telemedicine<br />
J.-p. ebert, t. Falck<br />
3 rd european Workshop on Wireless Sensor<br />
networks (eWSn), Zurich,<br />
February 13-15, <strong>2006</strong>, Switzerland<br />
(30) Leakage Current and Dopant Activation in<br />
Ultra-Shallow Junctions Following Millisecond<br />
Anneals Measured by Non-Contact<br />
Junction Photo-Voltage Methods<br />
V.n. Faifer, t.M.H. Wong, M.I. Curent,<br />
D.K. Schroder, p.J. timans, S. McCoy,<br />
J. Gelpey, W. lerch, S. paul, D. Bolze,<br />
t. Claryssee, t. Zangerle, A. Moussa,<br />
W. Vandervorst<br />
American Vacuum Society 53 rd International<br />
Symposium, San Francisco,<br />
november 12-17, <strong>2006</strong>, uSA<br />
(31) bASUMA - The Sixth Sense for Chronically<br />
iii Patients<br />
t. Falck, J. espina, J.-p. ebert, D. Dietterle<br />
Body Sensor networks, Cambridge,<br />
April 03-05, <strong>2006</strong>, uSA
(32) An integrated Gaussian Modulated Pulse<br />
Generator for Ultra-Wideband Wireless<br />
Localization System<br />
X. Fan .<br />
Joint China Japan Microwave Conference <strong>2006</strong>,<br />
Chengdu, August 24, <strong>2006</strong>, China<br />
(33) Contamination during High Temperature<br />
Treatments in SiC Reactor Tubes<br />
A. Fischer, V. Akhmetov, G. Kissinger,<br />
M. Kittler<br />
SIWeDS Fall Meeting, Cancun,<br />
november 02-03, <strong>2006</strong>, Mexico<br />
(34) High Performance SiGe biCMoS Technology<br />
for High Frequency Applications<br />
G.G. Fischer<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
(35) SiGe:C biCMoS Technologie für 77 GHz<br />
Radaranwendungen<br />
G.G. Fischer<br />
ItG / BMBF Statusseminar „Automobile Radarsensorik<br />
für Fahrerassistenzsysteme“,<br />
VDe Kongress Aachen,<br />
october 24, <strong>2006</strong>, Germany<br />
(36) SiGe:C biCMoS Technologies for RF Auto-<br />
motive Application<br />
G.G. Fischer<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(37) SiGe:C biCMoS-Technologien für Mikroelektronik-Anwendungen<br />
über 60 GHz<br />
G.G. Fischer<br />
GMM-Workshop Mikroelektronik-Anwendungen,<br />
Duisburg, January 23, <strong>2006</strong>, Germany<br />
(38) UWb Transceiver for Data Communication<br />
and indoor Localization<br />
G. Fischer<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(39) Electron-Holographic Measurement of<br />
“Dead Layer” Thickness, Amorphous<br />
Surface Layer Thickness, Noise, and<br />
inelastic Mean Free Path in Silicon<br />
Specimens prepared by Argon Milling<br />
and Fib<br />
p. Formanek<br />
the 16 th International Microscopy Congress<br />
(IMC 16), Sapporo,<br />
September 03-08, <strong>2006</strong>, Japan<br />
(40) Development and Characterization of a<br />
Process Technology for a 0.25 µm SiGe:C<br />
RF-biCMoS embedded Flash Memory<br />
A. Fox .<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(41) Combination of Spectroscopic Ellipsometry<br />
and Reflectometry for Characterization<br />
of Ni Silicide Process<br />
o. Fursenko, D. Bolze, I. Costina, p. Zaumseil,<br />
t. Huelsmann, W. lerch<br />
4 th Workshop ellipsometry, Berlin,<br />
February 20-22, <strong>2006</strong>, Germany<br />
(42) Vollkostenrechnung im iHP<br />
u. George<br />
Workshop Finanzielle und rechtliche Aspekte<br />
bei eu projekten im 6. und 7. Forschungsrahmenprogramm,<br />
Dresden,<br />
november 02, <strong>2006</strong>, Germany<br />
(43) A broadband Low Spur Fully integrated<br />
biCMoS PLL for 60 GHz Wireless<br />
Applications<br />
S. Glisic, W. Winkler<br />
Ieee Radio and Wireless Symposium – RWS<br />
<strong>2006</strong>, San Diego, January 17-19, <strong>2006</strong>, uSA<br />
(44) SiGe iCs for the 77 GHz Automotive Radar<br />
S. Glisic<br />
eeefCoM Workshop, Hochfrequenztechnik,<br />
Komponenten, Module und eMV, ulm,<br />
June 27-29, <strong>2006</strong>, Germany<br />
A n n u A l R e p o R t 2 0 0 6<br />
155
(45) 60 GHz Demonstrator in 0.25 µm SiGe:C<br />
biCMoS Technology<br />
e. Grass, M. piz, F. Herzel, K. Schmalz, Y. Sun,<br />
S. Glisic, K. tittelbach-Helmrich<br />
Ieee 802.15 Meeting, San Diego,<br />
July <strong>2006</strong>, uSA<br />
(46) 60 GHz oFDM Demonstrator in SiGe biCMoS<br />
Technology<br />
e. Grass, M. piz, F. Herzel, K. Schmalz, Y. Sun,<br />
S. Glisic, K. tittelbach-Helmrich, M. Krstic,<br />
M. ehrig, R. Kraemer, J.C. Scheytt<br />
BMBF Statusseminar <strong>2006</strong>, Mobile Kommunikation<br />
und Gan-elektronik, Fraunhofer<br />
Institut für Integrierte Schaltungen – IIS,<br />
erlangen, June 21-22, <strong>2006</strong>, Germany<br />
(47) Protocol integration of 60 GHz PHY<br />
e. Grass, K. tittelbach-Helmrich, D. Dietterle,<br />
J.-p. ebert, R. Kraemer<br />
Ieee 802.15 Meeting, Denver,<br />
March, <strong>2006</strong>, uSA<br />
(48) Scalable Low-Power High-Speed biCMoS<br />
ECL Library<br />
H. Gustat, G. Kell<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
(49) Ultra-High Speed A / D and D / A Converters<br />
H. Gustat<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
(50) A 10 GS /s 2 V pp Emitter Follower only<br />
Track and Hold Amplifier in SiGe biCMoS<br />
Technology<br />
S. Halder, S.A. osmany, H. Gustat,<br />
B. Heinemann<br />
Ieee International Symposium on Circuit<br />
and Systems <strong>2006</strong> (ISCAS <strong>2006</strong>), Island of Kos,<br />
May 21-24, <strong>2006</strong>, Greece<br />
(51) An 8 bit 10 GS /s 2 V pp Track and Hold<br />
Amplifier in SiGe biCMoS Technology<br />
S. Halder, H. Gustat, J.C. Scheytt<br />
156 A n n u A l R e p o R t 2 0 0 6<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
eSSCIRC <strong>2006</strong>, Montreux,<br />
September 18-22, <strong>2006</strong>, Switzerland<br />
(52) Si-bauelemente am iHP - von Hochfrequenz-<br />
und Hochvolttransistoren zum<br />
VLSi-Schaltkreis<br />
B. Heinemann<br />
Festkolloquium „40 Jahre Forschung für die<br />
Siliziumelektronik“, Frankfurt (oder),<br />
April 10, <strong>2006</strong>, Germany<br />
(53) 60 GHz RF-Frontend for 1 Gbit /s WLAN<br />
Transceiver<br />
F. Herzel<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
(54) 60 GHz Transceiver Analog Frontend<br />
F. Herzel<br />
German-Korean Workshop on nanotechnology<br />
nnFC - IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
(55) Creation of SiGe Radhard Library<br />
H.-V. Heyer, u. Jagdhold<br />
1 st International Workshop on Analog and<br />
Mixed Signal Integrated Circuits for Space<br />
Applications, AMICSA <strong>2006</strong>, Xanthi,<br />
october 02-03, <strong>2006</strong>, Greece<br />
(56) European Low Noise Local oscillator MMiC<br />
in SiGe Technology at 10 GHz and 18.3 GHz:<br />
the SiMs Project<br />
H.-V. Heyer, R. Follmann, D. Köther, K. Schmalz,<br />
F. Herzel, W. Winkler, J. nilsson, B.-M. Folio,<br />
B. Glass<br />
Microwave technology and techniques Workshop<br />
enabling Future Space Systems, estec,<br />
noordwijk, May 15-16, <strong>2006</strong>, the netherlands<br />
(57) impact of Ni Layer Thickness and Anneal<br />
Time on Nickel Silicide Formation by Rapid<br />
Thermal Processing<br />
t. Huelsmann, J. niess, W. lerch, o. Fursenko,<br />
D. Bolze<br />
Rtp <strong>2006</strong>-14 th Ieee International Conference
on Advanced thermal processing of Semiconductors,<br />
Kyoto, october 10-13, <strong>2006</strong>, Japan<br />
(58) infrared Absorption Measurement of<br />
Carbon Concentration in Silicon Crystals<br />
n. Inoue, M. nakatsu, V. D. Akhmetov<br />
eCS 10 th International Symposium on Silicon<br />
Materials Science and technology, Denver,<br />
May 07-12, <strong>2006</strong>, uSA<br />
(59) Einführung in das digitale VLSi-Design<br />
u. Jagdhold<br />
Fachhochschule lausitz, Senftenberg,<br />
December 20, <strong>2006</strong>, Germany<br />
(60) Radiation Hardness<br />
u. Jagdhold<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(61) Cathodoluminescence investigation of<br />
Silicon Nanowires<br />
G. Jia, t. Arguirov, M. Kittler, Z. Su, D. Yang,<br />
J. Sha<br />
44. Arbeitskreis punktdefekte Combined with<br />
CADReS expert Group Meeting, Dresden,<br />
March 23-25, <strong>2006</strong>, Germany<br />
(62) Cathodoluminescence investigation on<br />
Silicon Nanowires Fabricated by Thermal<br />
Evaporation of Sio<br />
G. Jia, t. Arguirov, M. Kittler, Z. Su, D. Yang,<br />
J. Sha<br />
International Conference on Beam Injection<br />
Assessment of Microstructures in Semiconductors<br />
(BIAMS <strong>2006</strong>), St. petersburg,<br />
June 11-15, <strong>2006</strong>, Russia<br />
(63) Luminescence of Silicon Nanowires<br />
G. Jia, t. Arguirov, M. Kittler, D. Yang, J. Sha<br />
International Conference on extended Defects<br />
in Semiconductors <strong>2006</strong> (eDS <strong>2006</strong>), Halle,<br />
September 17-22, <strong>2006</strong>, Germany<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(64) Defect Studies in Si 1-x Ge x Alloys and<br />
Si / Si 1-x-y Ge x C y Multilayers<br />
S. Kalem, e.V. lavrov, G. Kissinger, Y. Zhang,<br />
A.n. larsen, H. Radamson, J. Weber<br />
2 nd CADReS Workshop, Kalyves,<br />
September 08-11, <strong>2006</strong>, Greece<br />
(65) innovative Mikroelektronik am iHP –<br />
von ideen bis zu optimierten Prozessen<br />
W. Kissinger<br />
tagung der Kommission operations Research<br />
des Verbandes der Hochschullehrer für<br />
Betriebswirtschaft e.V. und der Deutschen<br />
Gesellschaft für operations Research, europauniversität<br />
Viadrina, Frankfurt (oder),<br />
February 10, <strong>2006</strong>, Germany<br />
(66) interaction of Vacancies and oxygen for<br />
oxide Precipitation in RTA Treated Silicon<br />
Wafers<br />
G. Kissinger, J. Dabrowski, A. Sattler,<br />
C. Seuring, t. Müller, W. von Ammon<br />
e-MRS Spring Meeting <strong>2006</strong>, Symposium V:<br />
Advanced Silicon for the 21 st Centry, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(67) Nanoelectronics and Ultrafast Communica-<br />
tions Technology R&D at the iHP<br />
W. Kissinger<br />
Workshop „Future Developments in organic<br />
electronics and photonics“, tFH Wildau,<br />
June 27, <strong>2006</strong>, Germany<br />
(68) oxide Precipitation via Coherent “Seed”oxide<br />
Phases<br />
G. Kissinger, J. Dabrowski<br />
High purity Silicon IX, 210 th eCS Meeting,<br />
Cancun, october 29 - november 03, <strong>2006</strong>, Mexico<br />
(69) oxide Precipitation via Coherent “Seed”oxide<br />
Phases<br />
G. Kissinger, J. Dabrowski<br />
2 nd CADReS Workshop, Kalyves,<br />
Spetember 08-11, <strong>2006</strong>, Greece<br />
A n n u A l R e p o R t 2 0 0 6<br />
157
(70) 1.5 µm Emission from a Silicon MoS-LED<br />
based on a Dislocation Network<br />
M. Kittler, M. Reiche, X. Yu, t. Arguirov,<br />
o. Vyvenko, W. Seifert, t. Mchedlidze, G. Jia,<br />
t. Wilhelm<br />
<strong>2006</strong> Ieee International electron Device<br />
Meeting, IeDM <strong>2006</strong>, San Francisco,<br />
December 11-13 <strong>2006</strong>, uSA<br />
(71) Light Emitters based on Silicon<br />
Nanostructures<br />
M. Kittler<br />
German-Korean Workshop on nanotechnology<br />
nnFC - IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
(72) A Low-Cost, High-Performance, High-<br />
Voltage Complementary biCMoS Process<br />
D. Knoll, B. Heinemann, K.-e. ehwald, A. Fox,<br />
H. Rücker, R. Barth, D. Bolze, t. Grabolla,<br />
u. Haak, J. Drews, B. Kuck, S. Marschmeyer,<br />
H.H. Richter, M. Chaimanee, o. Fursenko,<br />
p. Schley, B. tillack, K. Köpke, Y. Yamamoto,<br />
e. Wulf, D. Wolansky<br />
<strong>2006</strong> Ieee International electron Device<br />
Meeting, IeDM <strong>2006</strong>, San Francisco,<br />
December 11-13, <strong>2006</strong>, uSA<br />
(73) iHP‘s 0.25 µm biCMoS Technologies<br />
D. Knoll<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(74) Extraction of CTH with Pulsed Measurements<br />
F. Korndörfer<br />
Bipolar Arbeitskreis, erfurt,<br />
october 27, <strong>2006</strong>, Germany<br />
(75) 60 GHz Communication Systems<br />
R. Kraemer, e. Grass<br />
Wireless World Research Forum Meeting 17,<br />
Heidelberg, november 15-17, <strong>2006</strong>, Germany<br />
158 A n n u A l R e p o R t 2 0 0 6<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(76) An integrated 60 GHz Transceiver Front-<br />
End for oFDM in SiGe: biCMoS<br />
R. Kraemer, Y. Sun, S. Glisic, M. piz, F. Herzel,<br />
K. Schmalz, e. Grass, W. Winkler, J.C. Scheytt<br />
4 th Joint Symposium on opto- and Microelectronic<br />
Devices and Circuits (SoDC <strong>2006</strong>),<br />
Duisburg, September 03 -08, <strong>2006</strong>, Germany<br />
(77) Drahtlose Kommunikation in eingebetteten<br />
Automobilsystemen - Stand und Vision der<br />
Funktechnik für den Einsatz in Fahrzeugen<br />
R. Kraemer<br />
8. Kongress Wireless technologies, Dortmund,<br />
September 27-28, <strong>2006</strong>, Germany<br />
(78) Herausforderungen der Car-to-Car-<br />
Kommunikation<br />
R. Kraemer<br />
2. Wirtschaftstreffen „IHp trifft Automotive“,<br />
Frankfurt (oder), April 19, <strong>2006</strong>, Germany<br />
(79) iHP innovations and Research in Wireless<br />
Systems<br />
R. Kraemer<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(80) iHP Systems Circuits<br />
R. Kraemer<br />
German-Korean Workshop on nanotechnology<br />
nnFC - IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
(81) iHP meets Automotive<br />
R. Kraemer<br />
2. Wirtschaftstreffen „IHp trifft Automotive“,<br />
Frankfurt (oder), April 19, <strong>2006</strong>, Germany<br />
(82) UWb Transceiver for Data Communication<br />
and indoor Localization<br />
R. Kraemer, G. Fischer<br />
WWRF 16, Shanghai, April 26-28, <strong>2006</strong>, China
(83) Asynchronous and Synchronous Design<br />
Methods for Communication Systems and<br />
Applications<br />
M. Krstic<br />
1 st International Conference for Young<br />
Researchers in Computer Science, Control,<br />
electrical engineering and telecommunications,<br />
ICYR <strong>2006</strong>, Zielona Gora,<br />
September 08, <strong>2006</strong>, poland<br />
(84) A Graphical Tool for Specification, Rapid<br />
Prototyping and implementation of<br />
Location based Services<br />
p. langendörfer, S. Adam<br />
Innovations for europe Mobility, ItG-Fachtagung<br />
im Rahmen des VDe-Kongresses <strong>2006</strong>,<br />
Aachen, october 23-24, <strong>2006</strong>, Germany<br />
(85) Efficient Protection of Mobile Devices by<br />
Cross Layer interaction of Firewall<br />
Approaches<br />
p. langendörfer, M. lehmann, K. piotrowski<br />
4 th International Conference on Wired / Wireless<br />
Internet Communications (WWIC <strong>2006</strong>),<br />
Bern, May 10-12, <strong>2006</strong>, Switzerland<br />
(86) interface Reactions between High K<br />
Praseodymium Aluminate and TiN<br />
G. lippert, J. Dabrowski, I. Costina, G. lupina,<br />
V. Melnik, l. oberbeck, u. Schröder,<br />
t. Schroeder, Ch. Wenger, p. Zaumseil,<br />
H.-J. Müssig<br />
e-MRS Spring Meeting <strong>2006</strong>, Symposium l:<br />
Characterization of High-k Dielectric Materials,<br />
nice, May 29 - June 02, <strong>2006</strong>, France<br />
(87) innovative Materials: Key to Advances in<br />
<strong>Microelectronics</strong><br />
G. lupina<br />
Workshop From Research to Innovation,<br />
Szczecin, May 17-19, <strong>2006</strong>, poland<br />
(88) Modern CMoS Transistor Physics<br />
G. lupina<br />
5 th International Summerschool at IHp,<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(89) Praseodymium Silicate High-k Dielectric<br />
Layers on Si(100)<br />
G. lupina, t. Schroeder, J. Dabrowski,<br />
Ch. Wenger, A.u. Mane, G. lippert,<br />
H.-J. Müssig<br />
DpG Frühjahrstagung Dresden,<br />
March 27-31, <strong>2006</strong>, Germany<br />
(90) Praseodymium Silicate High-k Dielectrics<br />
G. lupina, t. Schroeder, Ch. Wenger,<br />
H.-J. Müssig<br />
e-MRS IuMRS ICeM Spring Meeting <strong>2006</strong>, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(91) Praseodymium Silicate High-k Dielectrics<br />
for CMoS Gate Dielectric Applications<br />
G. lupina, t. Schroeder, Ch. Wenger,<br />
J. Dabrowski, D. Schmeißer, H.-J. Müssig<br />
Junior euromat <strong>2006</strong>, lausanne,<br />
September 04-08, <strong>2006</strong>, Switzerland<br />
(92) NEPP: Negotiation Enhancements for<br />
Privacy Policies<br />
M. Maaser, S. ortmann, p. langendörfer<br />
W3C Workshop on languages for privacy<br />
policy negotiation and Semantics-Driven<br />
enforcement, Ispra, october 17-18, <strong>2006</strong>, Italy<br />
(93) on the implementation of a Low-Power<br />
iEEE 802.11a Compliant Viterbi Decoder<br />
K. Maharatna, A. troya, M. Krstic, e. Grass<br />
VlSI Design Conference, Hyderabad,<br />
January 03-07, <strong>2006</strong>, India<br />
(94) Atomic Vapour Deposition of High-k Hfo 2 :<br />
Growth Kinetics and Electrical Properties<br />
A.u. Mane, Ch. Wenger, J. Dabrowski,<br />
G. lupina, t. Schroeder, G. lippert, R. Sorge,<br />
p. Zaumseil, G. Weidner, I. Costina,<br />
H.-J. Müssig, S. pasko, u. Weber, V. Méric,<br />
M. Schumacher<br />
DpG Frühjahrstagung Dresden,<br />
March 27-31, <strong>2006</strong>, Germany<br />
A n n u A l R e p o R t 2 0 0 6<br />
159
(95) iHP ADS and Catena Design Kits<br />
t. Mausolf<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(96) An optical indoor Positioning System for<br />
the Mass Market<br />
o. Maye, J. Schäffner, M. Maaser<br />
3 rd Workshop on positioning, navigation and<br />
Communication - WpnC <strong>2006</strong>, Hannover,<br />
March 16, <strong>2006</strong>, Germany<br />
(97) Effect of Various Substrates and Various<br />
Heat Treatments on Crystallinity of Si<br />
Layers in MQW Structures<br />
t. Mchedlidze, t. Arguirov, S. Kouteva-<br />
Arguirova, G. Jia, M. Kittler<br />
BMBF-projekt-treffen „Bandstrukturdesign:<br />
ladungsträgertransport in Si-basierten<br />
Quantenstrukturen für zukünftige Höchsteffizienz-Solarzellen“,<br />
Cottbus,<br />
october 18- 20, <strong>2006</strong>, Germany<br />
(98) Electro- and Photoluminescence from<br />
b and Si implanted p-n Junctions<br />
t. Mchedlidze, t. Arguirov, M. Kittler<br />
Seminar university of twente, enschede,<br />
october 04, <strong>2006</strong>, the netherlands<br />
(99) Fe-P Complexes in n-Si<br />
t. Mchedlidze, M. Kittler<br />
44. Arbeitskreis punktdefekte Combined with<br />
CADReS expert Group Meeting, Dresden,<br />
March 23-25, <strong>2006</strong>, Germany<br />
(100) Structural and optical Properties of<br />
Si / Sio 2 Multi-Quantum Wells<br />
t. Mchedlidze, t. Arguirov, M. Kittler, R. Rölver,<br />
B. Berghoff, M. Först, B. Spangenberg<br />
e-MRS <strong>2006</strong>, Symposium C, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
160 A n n u A l R e p o R t 2 0 0 6<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(101) High-Performance SiGe biCMoS for Wireless<br />
and broadband Communication and<br />
Tutorial iHP Design Kits<br />
W. Mehr<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(102) Technologies and Circuits for Wireless<br />
Communication<br />
W. Mehr<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(103) A Complementary RF-LDMoS Architecture<br />
Compatible with 0.13 µm CMoS Technology<br />
n. Mohapatra, H. Rücker, K.e. ehwald, R. Sorge,<br />
R. Barth, p. Schley, D. Schmidt, H.e. Wulf<br />
18 th International Symposium on power<br />
Semiconductor Devices and ICs (ISpSD <strong>2006</strong>),<br />
napoli, June 04-08, <strong>2006</strong>, Italy<br />
(104) High-k Dielectrics and Examples of<br />
Application<br />
H.-J. Müssig<br />
German-Korean Workshop on nanotechnology<br />
nnFC – IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
(105) Phase Noise and Jitter Modeling for<br />
Fractional-N PLLs<br />
S.A. osmany, F. Herzel, K. Schmalz, W. Winkler<br />
„Integrierte digitale und analoge Schaltungen“<br />
- Kleinheubacher tagung,<br />
September 25-29, <strong>2006</strong>, Germany<br />
(106) Spike and Flash Annealing of Shallow<br />
Arsenic and Phosphorus implants in<br />
Different Gaseous Ambient<br />
S. paul, W. lerch, S. McCoy, J. Gelpey, D. Bolze<br />
16 th International Conference in Ion Implantation<br />
technology IIt – <strong>2006</strong>, Marseille,<br />
June 11-16, <strong>2006</strong>, France
(107) 60 GHz Channel Measurements for “Video<br />
Supply in Trains, busses and Aircraft”<br />
Scenario<br />
M. peter, W. Keusgen, e. Grass<br />
Ieee 802.15 Meeting, Dallas,<br />
november 14, <strong>2006</strong>, uSA<br />
(108) How Public Key Cryptography influences<br />
Wireless Sensor Node Lifetime<br />
K. piotrowski, p. langendörfer, S. peter<br />
4 th ACM Workshop on Security of Ad Hoc and<br />
Sensor networks (SASn <strong>2006</strong>), Alexandria,<br />
october 30, <strong>2006</strong>, uSA<br />
(109) A Simple oFDM Physical Layer for Short-<br />
Range High Data Rate Transmission at<br />
60 GHz<br />
M. piz, e. Grass<br />
11 th International oFDM Workshop (InoWo ‘06)<br />
Hamburg, August 31, <strong>2006</strong>, Germany<br />
(110) Quantum Effects in Si Nanocrystals<br />
Embedded in oxide or Amorphous Matrix<br />
p.n. Racec<br />
BMBF-projekt-treffen „Bandstrukturdesign:<br />
ladungsträgertransport in Si-basierten<br />
Quantenstrukturen für zukünftige Höchsteffizienz-Solarzellen“,<br />
Cottbus,<br />
october 18-20, <strong>2006</strong>, Germany<br />
(111) Si / SiGe Double barrier Resonant Tunneling<br />
Diodes<br />
p.n. Racec, e.R. Racec, u. Wulf, G. Kissinger,<br />
H. Richter<br />
1 st leibnitz Conference of Advanced Science,<br />
nanoscience 2005, lichtenwalde,<br />
october 06-08, <strong>2006</strong>, Germany<br />
(112) on the Reliability of Scanning Probe based<br />
Electrostatic Force Measurements<br />
M. Ratzke, J. Reif<br />
e-MRS <strong>2006</strong>, Symposium F, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(113) Scanning Probe based Electrical Characterization<br />
of Dislocation Networks Formed by<br />
Wafer Direct bonding<br />
M. Ratzke, o. Vyvenko, X. Yu, J. Reif, M. Kittler,<br />
M. Reiche<br />
International Conference on extended Defects<br />
in Semiconductors <strong>2006</strong> (eDS <strong>2006</strong>), Halle,<br />
September 17-22, <strong>2006</strong>, Germany<br />
(114) Light Emission by Dislocations in Silicon<br />
M. Reiche, M. Kittler, t. Wilhelm, t. Arguirov,<br />
W. Seifert, X. Yu<br />
leoS <strong>2006</strong>, 19 th <strong>Annual</strong> Meeting of the Ieee<br />
lasers and electro-optics Society, Montreal,<br />
october 29 - november 02, <strong>2006</strong>, Canada<br />
(115) Electrical Properties of Laser-Ablationinitiated<br />
Self-oganized Nanostructures on<br />
Silicon Surface<br />
J. Reif, M. Ratzke, o. Varlamova, F. Costache<br />
e-MRS <strong>2006</strong>, Symposium V, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(116) Carbon Plasma Etching in Advanced<br />
Semiconductor Technologies<br />
H.H. Richter, K.A. pears, M. Markert,<br />
S. Marschmeyer, S. Günther, G. Weidner,<br />
H. Silz<br />
DpG Frühjahrstagung Augsburg,<br />
March 27-30, <strong>2006</strong>, Germany<br />
(117) 0.13 µm biCMoS Development<br />
H. Rücker<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(118) SiGe biCMoS Technology<br />
H. Rücker<br />
German-Korean Workshop on nanotechnology<br />
nnFC - IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
A n n u A l R e p o R t 2 0 0 6<br />
161
(119) Technologies for Radio Frequency<br />
Applications<br />
H. Rücker<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(120) 60 GHz SiGe Transceiver Frontend-iCs für<br />
die drahtlose Nahfeldkommunikation<br />
J.C. Scheytt, Y. Sun, S. Glisic, F. Herzel,<br />
K. Schmalz, e. Grass, W. Winkler, R. Kraemer<br />
eeefCoM Workshop, Hochfrequenztechnik,<br />
Komponenten, Module und eMV, ulm,<br />
June 27-29, <strong>2006</strong>, Germany<br />
(121) Frequenzagiler Synthesizer und effizienter<br />
Leistungsverstärker für Multi-Standard<br />
basisstationen<br />
J.C. Scheytt<br />
BMBF Statusseminar <strong>2006</strong> in erlangen,<br />
June 20-22, <strong>2006</strong>, Germany<br />
(122) RF Circuit Design at iHP<br />
J.C. Scheytt<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(123) E-Test Measurements for biCMoS and Flash<br />
Technologies - Experiences and Problems<br />
p. Schley, A. Fox, B. Heinemann, D. Knoll,<br />
H. Rücker<br />
Keithley user Meeting, prague,<br />
october 08, <strong>2006</strong>, Czech Republic<br />
(124) An integrated 5 GHz Wideband Quadrature<br />
Modem in SiGe:C biCMoS Technology<br />
K. Schmalz, F. Herzel, M. piz<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
(125) Cadence Design Kit and MPW Service<br />
R.F. Scholz<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
162 A n n u A l R e p o R t 2 0 0 6<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(126) Design Kit & Multi Project Wafer Service<br />
R.F. Scholz<br />
German-Korean Workshop on nanotechnology<br />
nnFC - IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
(127) Heteroepitaxial (Pr 2 o 3 ) 1-x (Y 2 o 3 ) Mixed<br />
oxide Systems on Si Substrates as buffer<br />
Layers for the Preparation of High -Quality<br />
Single Crystalline Layer Systems<br />
t. Schroeder, H.-J. Müssig<br />
project Review Siltronic, Burghausen,<br />
February, <strong>2006</strong>, Germany<br />
(128) on the Epitaxy of Twin-free Cubic (111)<br />
Praseodymium Sesquioxide Films on<br />
Si(111)<br />
t. Schroeder, Ch. Wenger, H.-J. Müssig<br />
DpG Frühjahrstagung Dresden,<br />
March 27-31, <strong>2006</strong>, Germany<br />
(129) oxide Engineering and Lattice Matching<br />
Approaches for the Preparation of Single<br />
Crystalline Semiconductor-insulator-<br />
Semiconductor Systems<br />
t. Schroeder<br />
Materials Science Seminar of tu Dresden,<br />
october 07, <strong>2006</strong>, Germany<br />
(130) Physics of Metal-oxide-Semiconductor<br />
(MoS) Structures<br />
t. Schroeder<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(131) Studying the CMoS Process Compatibility<br />
of Praseodymium Silicate Layers on<br />
Si(001): Physical, Electrical, Thermal and<br />
Etching Properties<br />
t. Schroeder, G. lupina, Ch. Wenger, A.u. Mane,<br />
J. Dabrowski, H.-J. Müssig<br />
14 th Workshop on Dielectrics in Microelectro-
nics (WoDIM), Catania,<br />
June 26-28, <strong>2006</strong>, Italy<br />
(132) An implementation Study on Fault-Tolerant<br />
LEoN-3 Processor System<br />
Z. Stamenkovic, C. Wolf, G. Schoof, J. Gaisler<br />
Ip-Based SoC Design Conference, Grenoble,<br />
December 06-07, <strong>2006</strong>, France<br />
(133) LEoN-2: General Purpose Processor for<br />
a Wireless Engine<br />
Z. Stamenkovic, C. Wolf, G. Schoof, J. Gaisler<br />
9 th Ieee Workshop on Design and Diagnostics<br />
of electronic Circuits and Systems, prague,<br />
April 18-21, <strong>2006</strong>, Czech Republic<br />
(134) A Fully Differential 60 GHz Receiver Front-<br />
End with integrated PLL in SiGe:C biCMoS<br />
Y. Sun, S. Glisic, F. Herzel<br />
european Microwave Integrated Circuits<br />
Conference <strong>2006</strong>, Manchester,<br />
September 10-15, <strong>2006</strong>, uK<br />
(135) A Fully Differential 60 GHz Receiver Front-<br />
End with integrated PLL in SiGe:C biCMoS<br />
Y Sun, S. Glisic, F. Herzel<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(136) An integrated 60 GHz Receiver Front-End<br />
in SiGe:C biCMoS<br />
Y. Sun, l. Wang, J. Borngräber, F. Herzel,<br />
W. Winkler, R. Kraemer<br />
the 6 th topical Meeting on Silicon Monolithic<br />
Integrated Circuits in RF Systems (SiRFIC)<br />
<strong>2006</strong>, San Diego, January 18-20, <strong>2006</strong>, uSA<br />
(137) An integrated 60 GHz Transceiver Front-<br />
End for oFDM in SiGe biCMoS<br />
Y. Sun, S. Glisic, F. Herzel, K. Schmalz, e. Grass,<br />
W. Winkler, R. Kraemer<br />
WWRF 16, Shanghai, April 26-28, <strong>2006</strong>, China<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(138) Standardization of Test Methods of bulk<br />
Microdefects and Denuded Zone in<br />
Annealed CZ Si<br />
R. takada, n. Inoue, K. Moriya, K. Kashima,<br />
K. nakashima, M. Kato, S. Kitagawa, t. ono,<br />
H. uzushido, n. nango and V. Akhmetov<br />
eCS 10 th International Symposium on Silicon<br />
Materials Science and technology, Denver,<br />
May 07-12, <strong>2006</strong>, uSA<br />
(139) Development of SiGe biCMoS Technologies<br />
at the iHP: introduction<br />
B. tillack<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(140) NNFC - iHP Workshop: introduction<br />
B. tillack<br />
German-Korean Workshop on nanotechnology<br />
nnFC - IHp, Frankfurt (oder),<br />
February 14-15, <strong>2006</strong>, Germany<br />
(141) Design and implementation of a QoS<br />
Capable WLAN Modem for iEEE 802.11a<br />
K. tittelbach-Helmrich, G. panic, D. Dietterle,<br />
M. Krstic, J. Klatt, n. Fiebig, J. lehmann<br />
Workshop Quality-of-Service over Wireless<br />
lAns for Converged enterprise networks,<br />
Berlin, May 24, Germany<br />
(142) bias Conditions in Gamma Radiation<br />
Assurance Tests of bipolar Technologies<br />
for HEP Applications<br />
M. ullan, S. Diez, F. Campabadal, M. lozano,<br />
G. pellegrini, D. Knoll, B. Heinemann<br />
<strong>2006</strong> nuclear Science Symposium, Medical<br />
Imaging Conference and 15 th International<br />
Room temperature Semiconductor Detector<br />
Workshop, San Diego,<br />
october 29 - november 04, <strong>2006</strong>, uSA<br />
(143) Gamma Radiation Effects on Three<br />
Different SiGe HbT Technologies<br />
M. ullan, S. Diez, F. Campabadal, M. lozano,<br />
A n n u A l R e p o R t 2 0 0 6<br />
163
G. pellegrini, D. Knoll, B. Heinemann<br />
RADeCS <strong>2006</strong>, Athens,<br />
September 27-29, <strong>2006</strong>, Greece<br />
(144) interaction of iron with Grown-in<br />
Dislocations in p-type Silicon:<br />
An EbiC / DLTS Study<br />
o. Vyvenko, M. Kittler, W. Seifert<br />
International Conference on extended Defects<br />
in Semiconductors, eDS <strong>2006</strong>, Halle,<br />
September 17-22, <strong>2006</strong>, Germany<br />
(145) Transforming Protocol Specifications for<br />
Wireless Sensor Networks into Efficient<br />
Embedded System implementations<br />
G. Wagenknecht, D. Dietterle, J.-p. ebert,<br />
R. Kraemer<br />
3 rd european Workshop on Wireless Sensor<br />
networks (eWSn), Zurich,<br />
February 13-15, <strong>2006</strong>, Switzerland<br />
(146) 77 GHz Automotive Radar Receiver Frontend<br />
in SiGe:C biCMoS Technology<br />
l. Wang, J. Borngräber, W. Winkler<br />
eSSCIRC <strong>2006</strong>, Montreux,<br />
September 18-22, <strong>2006</strong>, Switzerland<br />
(147) A 0.7-1.4 GHz Variable band Low Noise<br />
Amplifier for Multi-band Applications<br />
l. Wang, W. Winkler, G. Wang, J. Borngräber<br />
8 th International Conference on Solid-State<br />
and Integrated-Circuit technology, Shanghai,<br />
october 23-26, <strong>2006</strong>, China<br />
(148) An improved Highly-Linear Low-Power<br />
Down-Conversion Micromixer for 77 GHz<br />
Automotive Radar in SiGe Technology<br />
l. Wang, R. Kraemer, J. Borngräber<br />
Ieee Mtt-S International Microwave<br />
Symposium, San Francisco,<br />
June 11-16, <strong>2006</strong>, uSA<br />
(149) bAAD: bidirectional Arbitrated<br />
Adaptive DFE<br />
G. Wang, J.-p. ebert, R. Kraemer<br />
164 A n n u A l R e p o R t 2 0 0 6<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
<strong>2006</strong> Ieee Sarnoff Symposium, princeton,<br />
March 27-28, <strong>2006</strong>, uSA<br />
(150) Advanced Dielectric Thin Film Deposition<br />
Techniques in <strong>Microelectronics</strong>: From<br />
Research to Production<br />
Ch. Wenger<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(151) High Quality Layered Pr 2 Ti 2 o 7 / Sio 2 MiM<br />
Capacitor for Mixed-Signal Applications<br />
Ch. Wenger, R. Sorge, t. Schroeder, A.u. Mane,<br />
D. Knoll, J. Dabrowski, H.-J. Müssig<br />
the 6 th topical Meeting on Silicon Monolithic<br />
Integrated Circuits in RF Systems (SiRFIC)<br />
<strong>2006</strong>, San Diego, January 18-20, <strong>2006</strong>, uSA<br />
(152) High-k Metal-insulator-Metal Capacitors<br />
for Radio Frequency Mixed-Signal Application<br />
Ch. Wenger, A.u. Mane, R. Sorge, G. Weidner,<br />
t. Schroeder, J. Dabrowski, G. lippert,<br />
p. Zaumseil, H.-J. Müssig<br />
DpG Frühjahrstagung Dresden,<br />
March 27-31, <strong>2006</strong>, Germany<br />
(153) Non-Linearity of High-k MiM Capacitors<br />
Ch. Wenger, t. Schroeder, J. Dabrowski,<br />
R. Sorge, H.-J. Müssig, S. pasko, Ch. lohe<br />
14 th Workshop on Dielectrics in<br />
<strong>Microelectronics</strong> (WoDIM), Catania,<br />
June 26-28, <strong>2006</strong>, Italy<br />
(154) New Support System at iHP and Customer<br />
Satisfaction Questionnaire<br />
W. Wichmann<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(155) An indoor Localization System based on<br />
DTDoA for Different Wireless LAN<br />
F. Winkler, e. Fischer, e. Grass, p. langendörfer
3 rd Workshop on positioning, navigation and<br />
Communication – WpnC <strong>2006</strong>, Hannover,<br />
March 16, <strong>2006</strong>, Germany<br />
(156) Front-End MMiC for Low-Cost 24 GHz Radar<br />
Systems<br />
W. Winkler, J. Borngräber<br />
International Radar Symposium (IRS <strong>2006</strong>),<br />
Krakow, May 22-26, <strong>2006</strong>, poland<br />
(157) Radar Circuits and Components<br />
W. Winkler<br />
36 th european Microwave Conference <strong>2006</strong>,<br />
Manchester, September 10-15, <strong>2006</strong>, uK<br />
(158) interconnect Technologies, Metallization,<br />
Selected backend of Line (bEoL) Topics<br />
D. Wolansky<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(159) Self-organized Pattern Formation of<br />
biomolecules at Silicon Surfaces<br />
A. Wolff, W. Fritzsche, M. Kittler, X. Yu,<br />
M. Reiche, t. Wilhelm, M. Seibt, o. Voß<br />
DnA-Based nanoscale Integration Symposium,<br />
Jena, May 23-25, <strong>2006</strong>, Germany<br />
(160) Self-organized Pattern Formation of<br />
biomolecules at Silicon Surfaces<br />
A. Wolff, W. Fritzsche, M. Kittler, X. Yu,<br />
M. Reiche, t. Wilhelm, M. Seibt, o. Voß<br />
Summer School: Complex Materials:<br />
Cooperative projects of the natural,<br />
engineering and Biosciences; International<br />
university Bremen,<br />
June 24 - July 01, <strong>2006</strong>, Germany<br />
(161) Self-organized Pattern Formation of<br />
biomolecules at Silicon Surfaces<br />
A. Wolff, W. Fritzsche, M. Kittler, X. Yu,<br />
M. Reiche, t. Wilhelm, M. Seibt, o. Voß<br />
Symposium‚ DAnn-based nanoscale<br />
Integration‘, Jena, May 18-22, <strong>2006</strong>, Germany<br />
V o R T R Ä G E – P R E S E N T A T i o N S<br />
(162) P Segregation behavior in SiGe:C Epitaxy<br />
Y. Yamamoto, K. Köpke, p. Zaumseil, B. tillack<br />
ASM user Meeting, parsdorf,<br />
September 28, <strong>2006</strong>, Germany<br />
(163) Phosphorus Segregation Control for SiGe:C<br />
Epitaxy<br />
Y. Yamamoto, K. Köpke, p. Zaumseil, B. tillack<br />
3 rd International SiGe technology and Device<br />
Meeting, IStDM <strong>2006</strong>, princeton,<br />
May 15-17, <strong>2006</strong>, uSA<br />
(164) Combined CL / EbiC / DLTS investigation of<br />
a Regular Dislocation Network Formed by<br />
Silicon Wafer Direct bonding<br />
X. Yu, o. Vyvenko, M. Kittler, W. Seifert,<br />
t. Mchedlidze, t. Arguirov, M. Reiche<br />
International Conference on Beam Injection<br />
Assessment of Microstructures in Semiconductors<br />
(BIAMS <strong>2006</strong>), St. petersburg,<br />
June 11-15, <strong>2006</strong>, Russia<br />
(165) Enhancement of iR Emission from a<br />
Dislocation Network in Si due to an<br />
External bias Voltage<br />
X. Yu, o.F. Vyvenko, M. Reiche, M. Kittler<br />
e-MRS <strong>2006</strong> Spring Meeting, nice,<br />
May 29 - June 02, <strong>2006</strong>, France<br />
(166) investigation of Dislocation Networks<br />
Formed by Si Wafer Direct bonding<br />
X. Yu, M. Kittler, t. Arguirov, W. Seifert,<br />
M. Ratzke, M. Reiche<br />
International Conference on extended Defects<br />
in Semiconductors <strong>2006</strong> (eDS <strong>2006</strong>), Halle,<br />
September 17-22, <strong>2006</strong>, Germany<br />
(167) A 70 MHz – 4.1 GHz 5 th -order Elliptic gm-C<br />
Low-Pass Filter in Complementary SiGe<br />
Technology<br />
l. Yuan, R. Krithivasan, W.-M.l. Kuo,<br />
l. Xiangtao, J.D. Cressler, H. Gustat,<br />
B. Heinemann<br />
Ieee Bipolar / BiCMoS Circuits and technology<br />
Meeting, BCtM <strong>2006</strong>, Maastricht,<br />
october 08-10, <strong>2006</strong>, the netherlands<br />
A n n u A l R e p o R t 2 0 0 6<br />
165
(168) Qualification Status of iHP’s 0.25 µm<br />
biCMoS Technologies<br />
p. Zaumseil<br />
5 th Workshop High-performance SiGe BiCMoS<br />
for Wireless and Broadband Communication,<br />
Frankfurt (oder),<br />
September 25-26, <strong>2006</strong>, Germany<br />
(169) X-Ray Characterization of Dielectric Films<br />
(an overview)<br />
p. Zaumseil<br />
5 th International Summerschool at IHp,<br />
Frankfurt (oder),<br />
August 28 - September 02, <strong>2006</strong>, Germany<br />
(170) X-Ray Characterization of Periodic Sub-nm<br />
Surface Relief Gratings<br />
p. Zaumseil, M. Birkholz, G. Weidner<br />
Xtop <strong>2006</strong>, Baden-Baden,<br />
September 19-22, <strong>2006</strong>, Germany<br />
(171) optical Properties, Elasto-optical Effects,<br />
and Critical-Point Parameters of biaxially<br />
Stressed Si 1-y C y Alloys on Si (001)<br />
St. Zollner, V. Vartanian, J.p. lui, p. Zaumseil,<br />
H.-J. osten, A.A. Demkov, B-Y nguyen<br />
<strong>2006</strong> 3 rd International SiGe technology and<br />
Device Meeting, IStDM <strong>2006</strong>, princeton,<br />
May 15-17, <strong>2006</strong>, uSA<br />
166 A n n u A l R e p o R t 2 0 0 6<br />
b E R i C H T E – R E P o R T S<br />
Berichte<br />
<strong>Report</strong>s<br />
(1) Zum weiteren Vorgehen bei der<br />
Zusammenarbeit mit biologie und Medizin<br />
M. Birkholz<br />
Strategiepapier, Frankfurt (oder), April <strong>2006</strong><br />
(2) Scenario Definition and initial Threat<br />
Analysis<br />
A.J.D. Casaca, D. Westhoff, p. langendörfer,<br />
K. piotrowski, S. peter<br />
project ubiSec&Sens<br />
(3) Ab initio investigation of Dielectrics for<br />
Modern <strong>Microelectronics</strong><br />
J. Dabrowski, A. Fleszar, G. lupina, A.u. Mane<br />
projekt: nIC hfo06, April <strong>2006</strong><br />
(4) Feasibility Study Wireless Technologies<br />
for NSR applications<br />
D. Dietterle, J.-p. ebert, p. langendörfer,<br />
G. panic, S. peter, K. piotrowski, J. Kersten,<br />
K. Dombrowski<br />
Final project <strong>Report</strong> for Airbus,<br />
IHp GmbH, Frankfurt (oder), May <strong>2006</strong><br />
(5) bASUMA – Projektzwischenbericht<br />
J.-p. ebert, D. Dietterle, G. Wang,<br />
A. J. Bakurudeen<br />
2. Halbjahr 2005, IHp GmbH, Frankfurt (oder),<br />
February <strong>2006</strong><br />
(6) bASUMA – Projektzwischenbericht<br />
J.-p. ebert, D. Dietterle, G. Wang,<br />
A. J. Bakurudeen<br />
1. Halbjahr <strong>2006</strong>, IHp GmbH, Frankfurt (oder),<br />
September <strong>2006</strong><br />
(7) Contamination during High Temperature<br />
Treatments in SiC Reactor Tubes<br />
A. Fischer, V. Akhmetov, G. Kissinger,<br />
M. Kittler<br />
SIWeDS Fall Meeting, Cancun,<br />
november 02-03, <strong>2006</strong>, Mexico
(8) Future Silicon Wafers (Abschlussbericht)<br />
G. Kissinger<br />
projekt Future Silicon Wafers, Dezember <strong>2006</strong><br />
(9) Future Silicon Wafers (Zwischenbericht)<br />
G. Kissinger<br />
projekt Future Silicon Wafers, Juli <strong>2006</strong><br />
(10) Alternatives Silicium für Solarzellen<br />
(ASiS): Einfluss von Verunreinigungen auf<br />
die elektrische Wirkung von Kristalldefekten<br />
M. Kittler, W. Seifert, t. Arguirov, G. Jia,<br />
o.F. Vyvenko<br />
Abschlussbericht BMu-projekt 0329846 H,<br />
<strong>2006</strong><br />
(11) Zwischenbericht SobSi-Projekt<br />
(Volkswagenstiftung)<br />
M. Kittler, M. Reiche, M. Seibt,<br />
W. Fritzsche et al.<br />
Februar <strong>2006</strong><br />
(12) DRAM Capacitors on TiN-Pr 2 o 3 /<br />
Al 2 o 3 - TiN basis for DRAM Applications<br />
G. lippert<br />
Industry <strong>Report</strong>: IHp -Qimonda Feasibility<br />
Study, Final <strong>Report</strong>, July <strong>2006</strong><br />
(13) Pr 2 o 3 -Added Al 2 o 3 Dielectrics for Future<br />
DRAM Technologies<br />
G. lippert, H.-J. Müssig<br />
Abschlussbericht zur Machbarkeitsstudie,<br />
IHp-Infineon projekt, 01.03.<strong>2006</strong><br />
(14) Evaluation of Heteroepitaxial Si 1-x Ge x /<br />
(Pr 2 o 3 ) 1-x (Y 2 o 3 ) x / Si(111) Systems as<br />
Soi Materials<br />
t. Schroeder<br />
Industry <strong>Report</strong>: Appendix to the<br />
IHp-SIltRonIC Feasibility study Burghausen,<br />
06.02.06<br />
b E R i C H T E – R E P o R T S<br />
(15) Ge and Si Heteroepitaxy via bixbyte based<br />
buffer oxides on the Si Technology<br />
Platform<br />
t. Schroeder<br />
Industry <strong>Report</strong> of the Siltronic – IHp<br />
technology project<br />
(16) Monolithic integration of New Valuable<br />
Semiconductors on the Si Technology<br />
Platform<br />
t. Schroeder, p. Storck<br />
Industry <strong>Report</strong> of the Siltronic – IHp<br />
technology project<br />
(17) Final System Performance and Validation<br />
<strong>Report</strong><br />
M. Spegel, p. Reinhardt, B. Cheetham, A. lunn,<br />
F.-M. Krause, K. tittelbach-Helmrich<br />
Deliverable D7.2 des WInDeCt projektes<br />
(18) interim <strong>Report</strong>: Scientific Cooperation<br />
between AiXTRoN and iHP<br />
Ch. Wenger<br />
project High-K (Aixtron), September <strong>2006</strong><br />
(19) Specification of the Advanced Concealed<br />
Data Aggregation<br />
D. Westhoff, C. Castelluccia, S. peter,<br />
p. langendörfer<br />
project ubiSec&Sens<br />
(20) Specification, implementation and Simulation<br />
of Secure Distributed Data Storage<br />
D. Westhoff, p. langendörfer, K. piotrowski,<br />
A. poschmann<br />
project ubiSec&Sens<br />
A n n u A l R e p o R t 2 0 0 6<br />
167
Monographien<br />
Monographs<br />
(1) Thin Film Analysis by X-Ray Scattering<br />
M. Birkholz<br />
with contributions by p. Fewster and C. Genzel,<br />
Wiley-VCH, Weinberg, 356 pages, (<strong>2006</strong>)<br />
(2) <strong>2006</strong> SiGe and Ge: Materials, Processing<br />
and Devices Symposium<br />
D. Harame, J. Cressler, B. tillack, G. Masini,<br />
S. Koester, J. Boquet, K. Rim, M. Caymax,<br />
A. Reznicek, S. Zaima ( eds.)<br />
eCS transactions 3(7) (<strong>2006</strong>)<br />
(3) The Silicon Age<br />
M. Kittler, D. Yang (eds.)<br />
proc. 2 nd Sino-German Symposium,<br />
held 19-24 September 2005 in Cottbus,<br />
Germany, Special issue:<br />
physica Status Solidi (a), 203(4),<br />
657-809 (<strong>2006</strong>)<br />
(4) Wireless Network Security<br />
S. Shen, C. lin, Y. Sun, J. pan, p. langendörfer,<br />
Z. Cao .<br />
Wireless Communications and Mobile<br />
(Wiley) 6(3) (<strong>2006</strong>)<br />
168 A n n u A l R e p o R t 2 0 0 6<br />
M o N o G R A P H S – H A b i L i T A T i o N S / D i S S E R T A T i o N S<br />
Habilitationen / Dissertationen<br />
Habilitations / Dissertations<br />
(1) Atomic Puzzle - Growth-Structure-Property<br />
Relations in Thin Solid Films for Advanced<br />
Technological Applications<br />
M. Birkholz<br />
Habilitation Btu Cottbus (<strong>2006</strong>)<br />
(2) Development and Characterisation of a<br />
Process Technology for a 0.25µm SiGe:C<br />
RF-biCMoS embedded Flash Memory<br />
A. Fox<br />
Dissertation technische universität Kiel (<strong>2006</strong>)<br />
(3) Request-driven GALS Technique for<br />
Datapath Architectures<br />
M. Krstic<br />
Dissertation Btu Cottbus (<strong>2006</strong>)<br />
(4) Praseodymium Silicate High-k Dielectrics<br />
on Si(100)<br />
G. lupina<br />
Dissertation Btu Cottbus (<strong>2006</strong>)<br />
(5) Key Management for Wireless Ad-Hoc<br />
Networks<br />
D. Sanchez<br />
Dissertation Btu Cottbus (<strong>2006</strong>)
Diplomarbeiten / Masterarbeiten /<br />
Bachelorarbeiten<br />
Diploma Theses / Master Theses /<br />
bachelor Theses<br />
D i P L o M A T H E S E S / M A S T E R T H E S E S / b A C H E L o R T H E S E S<br />
(1) Design und Entwicklung eines graphischen<br />
Editors für Rapid Prototyping und Realisierung<br />
kontext-sensitiver Dienste mit PLASMA<br />
S. Adam<br />
Masterarbeit Btu Cottbus (<strong>2006</strong>)<br />
(2) Eine Datensicherungs- und Transportschicht<br />
für drahtlose Sensornetze<br />
M. Brzozowski<br />
Masterarbeit Btu Cottbus (<strong>2006</strong>)<br />
(3) Entwurf und implementation eines LDPC-<br />
Kodierers / Dekodierers für ein Gbit-WLAN<br />
M. ehrig<br />
Diplomarbeit Humboldt-universität Berlin (<strong>2006</strong>)<br />
(4) Simulation und Realisierung eines auf<br />
differentiellen Laufzeiten basierenden<br />
Systems zur Positionsbestimmung und<br />
Anpassung an diverse Netzwerkstandards<br />
e. Fischer<br />
Diplomarbeit Humboldt-universität Berlin (<strong>2006</strong>)<br />
(5) Automatische Verifizierung von<br />
SPiCE-Modellen in Perl<br />
t. Mausolf<br />
Diplomarbeit FH Brandenburg (<strong>2006</strong>)<br />
(6) Evaluation of Design Alternatives for<br />
Flexible Elliptic Curve Hardware Accelerators<br />
S. peter<br />
Diplomarbeit Btu Cottbus (<strong>2006</strong>)<br />
(7) Desing of a Power Saving Methodology for<br />
Next Generation Wireless System-on-Chip<br />
Design<br />
K. Saeed<br />
Master of Science KtH Stockholm (<strong>2006</strong>)<br />
(8) Design of a Hardware Accelerator for<br />
iEEE 802.15.3 MAC Protocol<br />
H. Shah<br />
Master of Science KtH Stockholm (<strong>2006</strong>)<br />
(9) Dreidimensionale ortsbestimmung von<br />
mobilen Funksensoren in schwierigen<br />
Umgebungsbedingungen<br />
S. Willenbacher<br />
Masterarbeit Btu Cottbus (<strong>2006</strong>)<br />
(10) Materialcharakterisierung von Solarzellen<br />
aus multikristallinem Silicium<br />
Y. Yeromenko<br />
Diplomarbeit Btu Cottbus (<strong>2006</strong>)<br />
(11) Femtosekunden-Laser-ionisations-Flugzeitmassensprektrometrie<br />
für die Analyse<br />
von Schichtsystemen<br />
l. Zhu<br />
Diplomarbeit Btu Cottbus (<strong>2006</strong>)<br />
A n n u A l R e p o R t 2 0 0 6<br />
169
Patente<br />
Patents<br />
(1) Vorrichtung und Verfahren zur<br />
strukturierten immobilisierung von<br />
Molekülen auf Halbleitersubstraten<br />
M. Birkholz, J. Bauer, M. Kittler<br />
De-patentanmeldung IHp.271.05,<br />
am 02.03.06, AZ: 10 <strong>2006</strong> 010 495.1<br />
(2) Protokollbeschleuniger für das iEEE<br />
802.15.3 drahtlose Medienzugriffsprotokoll<br />
D. Dietterle<br />
De-patentanmeldung IHp.284.06,<br />
am 14.09.06, AZ: 10 <strong>2006</strong> 043 779.9<br />
(3) integrierter impuls-Generator mit<br />
abstimmbarer impulsbreite<br />
X. Fan<br />
De-patentanmeldung IHp.293.06,<br />
am 23.11.06, AZ: 10 <strong>2006</strong> 055 868.5<br />
(4) Asynchrone Hüllschaltung für eine global<br />
asynchrone, lokale synchrone (GALS)<br />
Schaltung<br />
e. Grass, M. Krstic<br />
pCt-Anmeldung IHp.268.pCt, am 01.08.06,<br />
AZ: pCt / ep<strong>2006</strong> / 064898<br />
(5) Leistungsverstärker mit Delta-Sigma-<br />
Modulator mit hilfsweiser Rückkopplung<br />
H. Gustat<br />
De-patentanmeldung IHp.281.06,<br />
am 21.11.06, AZ: 10 <strong>2006</strong> 055 577.5<br />
(6) Sigma-Delta-Modulator mit variablem<br />
Taktsignal<br />
H. Gustat, p. ostrovskyy<br />
De-patentanmeldung IHp.277.06,<br />
am 17.11.06, AZ: 10 <strong>2006</strong> 054 776.4-42<br />
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P A T E N T E – P A T E N T S<br />
(7) Verfahren zum Kalibrieren von<br />
Stromquellen<br />
S. Halder, H. Gustat<br />
De-patentanmeldung IHp.269.05,<br />
am 06.06.06, AZ: 10 <strong>2006</strong> 027 165.3<br />
(8) Halbleiterbauelement mit versetzungsbasiertem<br />
vergrabenen Leitbahnsystem<br />
M. Kittler, W. Seifert, X. Yu<br />
De-patentanmeldung IHp.275.05,<br />
am 13.02.06, AZ: 10 <strong>2006</strong> 007 611.7<br />
(9) Versetzungsbasierte MiS-LED<br />
M. Kittler, X. Yu, o. Vyvenko, t. Arguirov,<br />
W. Seifert, M. Reiche<br />
De-patentanmeldung IHp.283.06,<br />
am 31.05.06, AZ: 10 <strong>2006</strong> 026 457.6<br />
(10) Versetzungsbasierter Lichtemitter<br />
M. Kittler, W. Seifert, t. Arguirov, M. Reiche<br />
De-patentanmeldung IHp.265.05A,<br />
am 16.02.06, AZ: 10 <strong>2006</strong> 008 025.4-33<br />
(11) Versetzungsbasierter Lichtemitter<br />
M. Kittler, W. Seifert, t. Arguirov, M. Reiche<br />
pCt-patentanmeldung IHp.265.pCt,<br />
am 03.05.06, AZ: pCt / ep<strong>2006</strong> / 062030<br />
(12) Komplementäre bipolar-Halbleitervorrichtung<br />
D. Knoll, B. Heinemann, K.-e. ehwald<br />
De-patentanmeldung IHp.294.06,<br />
am 08.12.06, AZ: 10 <strong>2006</strong> 059 113.5<br />
(13) Geschütztes Ausführen einer Datenverarbeitungsanwendung<br />
eines Dienste-<br />
anbieters für einen Nutzer durch eine<br />
vertrauenswürdige Ausführungsumgebung<br />
p. langendörfer, M. Maaser<br />
De-patentanmeldung IHp.272.05,<br />
am 26.04.06, AZ: 10 <strong>2006</strong> 020 093.4
(14) Verfahren und Vorrichtung zum berechnen<br />
einer Polynom-Multiplikation, insbesondere<br />
für die elliptische Kurven-Kryptographie<br />
p. langendörfer, Z. Dyka, S. peter<br />
pCt-patentanmeldung IHp.264.pCt,<br />
am 06.03.06, AZ: pCt / ep<strong>2006</strong> / 060494<br />
(15) optischer Translations-Rotations-Sensor<br />
o. Maye, M. Maaser, J. Schäffner<br />
De-patentanmeldung IHp.287.06,<br />
am 29.12.06, AZ: 10 <strong>2006</strong> 062 673.7<br />
(16) MiM / MiS-Struktur mit Praseodymtitanat<br />
oder Praseodymoxid als isolatormaterial<br />
H.-J. Müssig, G. lippert, Ch. Wenger<br />
uS-patentanmeldung<br />
am 14.06.06, AZ: 11 / 454, 145<br />
(17) Verfahren zur Reduktion eines Polynoms<br />
in einem binären finiten Feld<br />
S. peter, p. langendörfer<br />
De-patentanmeldung IHp.276.05,<br />
am 22.03.06, AZ: 10 <strong>2006</strong> 013 989.5<br />
(18) integrierte Schaltung mit Strahlungsschutz<br />
G. Schoof, R. Kraemer<br />
De-patentanmeldung IHp.286.06,<br />
am 23.11.06, AZ: 10 <strong>2006</strong> 055 867.7-34<br />
P A T E N T E – P A T E N T S<br />
(19) Verschlüsselungseinheit<br />
F. Vater, S. peter, u. Jagdhold, p. langendörfer<br />
De-patentanmeldung IHp.289.06,<br />
am 22.12.06, AZ: 10 <strong>2006</strong> 062 649.4<br />
(20) Method and Apparatus for Low-Complexity<br />
and Fast Start-up Adaptive Equalization of<br />
Multipath Channel Through Accurate<br />
initialization<br />
G. Wang<br />
pCt-Anmeldung IHp.274.pCt, am 14.12.06,<br />
AZ: pCt / ep<strong>2006</strong> / 069711<br />
(21) Verfahren und Vorrichtung geringer<br />
Komplexität für eine adaptive Entzerrung<br />
von Mehrwegkanälen<br />
G. Wang<br />
De-patentanmeldung IHp.274.05,<br />
am 19.04.06, AZ: 10 <strong>2006</strong> 018 914.0<br />
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A N G E b o T E U N D L E i S T U N G E N – D E L i V E R A b L E S A N D S E R V i C E S<br />
Deliverables and Services
A N G E b o T E U N D L E i S T U N G E N – D E L i V E R A b L E S A N D S E R V i C E S<br />
Multiprojekt Wafer (MPW) und<br />
Prototyping Service<br />
Das <strong>IHP</strong> bietet seinen Forschungspartnern und Kunden<br />
Zugriff auf seine leistungsfähigen 0,25-µm-SiGe-BiC-<br />
MOS-Technologien.<br />
Die Technologien sind insbesondere für Anwendungen im<br />
oberen GHz-Bereich geeignet, so z.B. für die drahtlose und<br />
Breitbandkommunikation oder Radar. Sie bieten integrierte<br />
HBTs mit Grenzfrequenzen bis zu 220 GHz und integrierte<br />
HF-LDMOS-Bauelemente mit Durchbruchspannungen bis<br />
zu 33 V einschließlich komplementärer Bauelemente.<br />
Verfügbar sind folgende vier Technologien:<br />
SG25H1: Eine Hochleistungs-Technologie mit<br />
npn-HBTs bis zu f T / f max = 180 / 220 GHz.<br />
SG25H2: Eine komplementäre Hochleistungs-<br />
Technologie mit npn-HBTs ähnlich SG25H1<br />
und zusätzlichen pnp-HBTs mit<br />
f T / f max = 90 / 120 GHz.<br />
SG25H3: Eine Technologie mit mehreren npn-HBTs,<br />
deren Parameter von einer hohen HF-Performance<br />
(f T / f max = 110 / 180 GHz) zu größeren<br />
Durchbruchspannungen bis zu 7 V reichen.<br />
SGB25VD: Eine kostengünstige Technologie mit mehreren<br />
npn-Transistoren mit Durchbruchspannungen<br />
bis zu 7 V. Eine Besonderheit dieser Technologie<br />
sind zusätzliche integrierte komplementäre<br />
HF-LDMOS-Bauelemente mit<br />
Durchbruchspannungen bis zu 33 V.<br />
Ab 2008 bietet das <strong>IHP</strong> Zugriff auf seine 0,13-µm-<br />
BiCMOS-Technologie als nächste Generation. Diese<br />
Technologie wird integrierte HBTs mit Grenzfrequenzen<br />
bis zu 300 GHz enthalten.<br />
Es finden technologische Durchläufe nach einem festen,<br />
unter www.ihp-microelectronics.com verfügbaren Zeitplan<br />
statt.<br />
Multiproject Wafer (MPW) and<br />
Prototyping Service<br />
IHp offers research partners and customers access to<br />
its powerful 0.25 µm SiGe BiCMoS technologies.<br />
the technologies are especially suited for applications<br />
in the higher GHz bands (e.g. for wireless,<br />
broadband, radar). they provide integrated HBts with<br />
cut-off frequencies of up to 220 GHz and integrated<br />
RF lDMoS devices with breakdown voltages of up to<br />
33 V, including complementary devices.<br />
The following four technologies are available:<br />
SG25H1: A high-performance technology with<br />
npn-HBts up to f t / f max = 180 / 220 GHz.<br />
SG25H2: A complementary high-performance<br />
technology with npn-HBts similar to<br />
SG25H1 and additional pnp-HBts with<br />
f t / f max = 90 / 120 GHz.<br />
SG25H3: A technology with a set of npn-HBts<br />
ranging from a high RF performance<br />
(f t / f max = 110 GHz / 180 GHz) to higher<br />
breakdown voltages up to 7 V.<br />
SGB25VD: A cost-effective technology with a set of<br />
npn-HBts up to a breakdown voltage of<br />
7 V. A distinctive feature of this technology<br />
is additional integrated complementary<br />
RF lDMoS devices with breakdown<br />
voltages up to 33 V.<br />
From 2008 IHp will offer access to its next generation<br />
0.13 µm BiCMoS technology. this technology will<br />
include integrated HBts with cut-off frequencies of<br />
up to 300 GHz.<br />
the schedule for MpW & prototyping runs is located<br />
at www.ihp-microelectronics.com.<br />
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A N G E b o T E U N D L E i S T U N G E N – D E L i V E R A b L E S A N D S E R V i C E S<br />
Ein Cadence-basiertes Design-Kit für Mischsignale ist<br />
verfügbar. Wiederverwendbare Schaltungsblöcke und<br />
IPs des <strong>IHP</strong> für die drahtlose und Breitbandkommunikation<br />
werden zur Unterstützung von Designs angeboten.<br />
In den folgenden Tabellen sind die wesentlichen Parameter<br />
der für MPW & Prototyping angebotenen Technologien<br />
dargestellt:<br />
1. High-Performance 0.25 µm SiGe biCMoS<br />
(SG25H1)<br />
Parameter npn1 npn2<br />
bipolar Section<br />
A e 0.21 x 0.84 µm 2 0.18 x 0.84 µm 2<br />
peak f max 190 GHz 220 GHz<br />
peak f t 190 GHz 180 GHz<br />
BV Ce0 1.9 V 1.9 V<br />
BV CBo 4.5 V 4.5 V<br />
V A 40 V 40 V<br />
β 200 200<br />
A cadence-based mixed signal design kit is available.<br />
For high frequency designs an analogue Design<br />
Kit in ADS can be used. IHp’s reusable blocks and Ips<br />
for wireless and broadband are offered to support<br />
designs.<br />
technical key-parameters of the technologies offered<br />
for MpW & prototyping are:<br />
2. Complementary High-Performance 0.25 µm<br />
SiGe biCMoS (SG25H2)<br />
Parameter npn pnp<br />
bipolar Section<br />
A e 0.21 x 0.84 µm 2<br />
peak f max 170 GHz 120 GHz<br />
peak f t 170 GHz 90 GHz<br />
BV Ce0 1.9 V - 2.5 V<br />
BV CBo 4.5 V - 4.0 V<br />
V A 40 V 30 V<br />
β 160 100<br />
3. 0.25 µm SiGe biCMoS with a set of npn-HbTs, ranging from high RF performance to high breakdown<br />
voltages (SG25H3)<br />
Parameter High High Medium High<br />
Performance1 Performance2 Voltage Voltage<br />
bipolar Section<br />
A e 0.22 x 0.84 µm 2 0.42 x 0.84 µm 2 0.22 x 2.24 µm 2 0.22 x 2.24 µm 2<br />
peak f max 180 GHz 140 GHz 140 GHz 80 GHz<br />
peak f t 110 GHz 120 GHz 45 GHz 30 GHz<br />
BV Ce0 2.3 V 2.3 V 5 V > 7 V<br />
BV CBo 6.0 V 6.0 V 15.5 V 21.0 V<br />
V A 30 V 30 V 30 V 30 V<br />
β 150 150 150 150
A N G E b o T E U N D L E i S T U N G E N – D E L i V E R A b L E S A N D S E R V i C E S<br />
4. 0.25 µm SiGe biCMoS with High-Voltage Devices (SGb25VD)<br />
bipolar Section<br />
Parameter High Standard High<br />
Performance Voltage<br />
A e 0.42 x 0.84 µm 2<br />
peak f max 95 GHz 90 GHz 70 GHz<br />
peak f t 75 GHz 45 GHz 25 GHz<br />
BV Ceo 2.4 V 4.0 V 7.0 V<br />
BV CBo > 7 V > 15 V > 20 V<br />
V A > 50 V > 80 V > 100 V<br />
β 190 190 190<br />
LDMoS Section<br />
n-LDMoS p-LDMoS<br />
n-LDMoS 23 n-LDMoS 13 n-LDMoS<br />
i10****<br />
p-LDMoS 8 p-LDMoS 12<br />
BV DSS * 26 V 15 V 11.5 V -10 V -13.5 V<br />
I Dsat ** 140 µA / µm 140 µA / µm 175 µA / µm 85 µA / µm 90 µA / µm<br />
(V GS = 1.5 V) (V GS = 1.5 V) (V GS = 1.5 V) (V GS = -1.5 V) (V GS = -1.5 V)<br />
I leakage < 15 pA / µm < 15 pA / µm < 15 pA / µm < 50 pA / µm < 50 pA / µm<br />
(V DS = 20 V) (V DS = 10 V) (V DS = 8 V) (V DS = -8 V) (V DS = -8 V)<br />
R ON 11 Ωmm 7 Ωmm 7.5 Ωmm 16 Ωmm 11.5 Ωmm<br />
Peak f max *** 40 GHz 43 GHz 46 GHz 25 GHz 22 GHz<br />
Peak f T *** 19 GHz 23 GHz 21 GHz 11 GHz 11 GHz<br />
*:@100 pA / µm **:@V = 5 V ***:@V = 4 V ****: substrate isolated<br />
DS DS<br />
An addidional n-LDMOS with BV of 33 V is available.<br />
DSS<br />
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CMoS and Passives of 0.25 µm Technologies<br />
Design Kits<br />
Parameter SG25H1 – H3 SGb25VD<br />
CMoS Section<br />
Core Supply Voltage 2.5 V<br />
nMoS V th 0.6 V<br />
I Dsat 540 µA / µm 570 µA / µm<br />
I off 3 pA / µm<br />
pMoS V th - 0.56 V - 0.51 V<br />
I Dsat 230 µA / µm 290 µA / µm<br />
I off 3 pA / µm<br />
Passives<br />
MIM Capacitor 1 fF / µm 2<br />
n + poly Resistor 210 Ω /<br />
p + poly Resistor 280 Ω / 310 Ω /<br />
High poly Resistor 1600 Ω / 2000 Ω /<br />
Varactor C max / C min 3<br />
Inductor Q@2.4 GHz 12 (1 nH), 6 (15 nH)<br />
I nductor Q@5.8 GHz 16 (1 nH), 10 (2 nH)<br />
5. An Additional 0.13 µm BiCMOS With the Following Scheduled Parameters Will be Available From 2008<br />
bipolar Section<br />
Parameter<br />
Die Design Kits unterstützen eine Cadence Mischsignal-<br />
Plattform:<br />
- Design Framework II (Cadence 5.0-5.1 / 6.1<br />
vorgesehen ab 4. Quartal 2007)<br />
- Verhaltens-Beschreibung (Verilog HDL)<br />
- Logische Synthese & Optimierung (VHDL / HDL<br />
Compiler, Design Compiler / Synopsys, Power<br />
Compiler / Synopsys)<br />
npn13P npn13V<br />
A e 0.12 x 0.48 µm 2 0.12 x 0.48 µm 2<br />
peak f max 300 GHz 120 GHz<br />
peak f t 250 GHz 45 GHz<br />
BV CBo 1.7 V 4 V<br />
BV CBo 5.5 V 16 V<br />
β 500 450<br />
Design Kits<br />
the design kits support a Cadence mixed signal platform:<br />
- Design Framework II (Cadence 5.0-5.1 / 6.1<br />
scheduled for Q4 2007)<br />
- Behavioral Modeling (Verilog HDl)<br />
- logic Synthesis & optimization<br />
(VHDl / HDl Compiler, Design Compiler /<br />
Synopsys, power Compiler / Synopsys)
A N G E b o T E U N D L E i S T U N G E N – D E L i V E R A b L E S A N D S E R V i C E S<br />
- Test Generation / Synthetisierer / Test Compiler<br />
(Synopsys)<br />
- Simulation (RF: SpectreRF, Analog: SpectreS,<br />
Verhaltens-Beschreibung / Digital: Leapfrog / NC-<br />
Affirma / Verilog-XL / ModelSim)<br />
- Platzieren & Verbinden (Silicon Ensemble & Preview)<br />
- Layout (Virtuoso Editor-Cadence)<br />
- Verifizierung (Diva and Assura: DRC / LVS / Extract /<br />
Parasitic Extraction)<br />
- ADS-Support über RFDE / RFIC mit dynamischem<br />
Link zu Cadence ist verfügbar<br />
- Ein eigenständiges ADS Kit einschließlich<br />
Momentum Substrate Layer File wird unterstützt,<br />
jedoch ohne Layout-Unterstützung<br />
- Unterstützung von Analog Office und Tanner über<br />
Partner<br />
- ECL-Bibliothek für SGB25VD<br />
- Strahlungsresistente CMOS-Bibliothek ist geplant<br />
- β Design Kit für 0,13 µm BiCMOS ist ab<br />
4. Quartal 2007 verfügbar<br />
Verfügbare analoge und digitale Blöcke und Designs<br />
für die drahtlose und Breitbandkommunikation<br />
Zur Unterstützung von Designs bietet das <strong>IHP</strong> Schaltungsblöcke<br />
und Schaltungen für Lösungen im Bereich<br />
drahtlose und Breitbandkommunikation an:<br />
- LC-VCO für 77-81 GHz mit Ausgangspuffer<br />
- Komponenten für 60-GHz-Analog-Frontends<br />
(LNA, Mischer, vollständig integrierte PLL)<br />
- 60 nach 5 GHz Empfänger-Frontend mit vollständig<br />
integrierter PLL<br />
- 5 nach 60 GHz Sender-Frontend mit vollständig<br />
integrierter PLL<br />
- Mischer, VCOs, Prescaler, VCO-Prescaler für 24 GHz<br />
- DAC-Komponenten für mittlere und hohe<br />
Geschwindigkeiten bis zu 30 GSps<br />
- UWB Transceiver-Komponenten wie Mischer-<br />
Korrelator und Breitband-LNA<br />
- Statische und dynamische Teilerschaltungen bis<br />
zu 60 GHz<br />
- 5-GHz Breitband-Modem (1 Gbps) für OFDM<br />
- 8-11 GHz und 16-19 GHz Integer-N PLLs mit<br />
integriertem VCO mit geringem Phasenrauschen<br />
- test Generation / Synthesizer / test Compiler<br />
(Synopsys)<br />
- Simulation (RF: SpectreRF, Analog: SpectreS,<br />
Behavioral / Digital: leapfrog / nC-Affirma /<br />
Verilog-Xl / ModelSim)<br />
- place & Route (Silicon ensemble & preview)<br />
- layout (Virtuoso editor-Cadence)<br />
- Verification (Diva and Assura: DRC / lVS / extract /<br />
parasitic extraction)<br />
- ADS-support via RFDe / RFIC dynamic link to<br />
Cadence is available<br />
- A standalone ADS Kit including Momentum<br />
substrate layer file is supported, but without<br />
layout support<br />
- Support of Analog office, Catena, and tanner<br />
via partners is available<br />
- eCl library for SGB25VD<br />
- Radiation hard CMoS library is planned<br />
- β Design Kit for 0.13 µm BiCMoS will be available<br />
from Q4 2007<br />
Available Analog and Digital blocks and Designs<br />
for Wireless and broadband Communications<br />
to support designs, IHp offers a wide range of blocks<br />
and designs for wireless & broadband solutions:<br />
- 77-81 GHz lC-VCo with output buffer<br />
- 60 GHz Analog Frontend Components<br />
(lnA, Mixers, fully-integrated pll)<br />
- 60 to 5 GHz RX-Frontend with fully-integrated<br />
pll<br />
- 5 to 60 GHz tX-Frontend with fully-integrated<br />
pll<br />
- 24 GHZ mixers, VCos, prescaler, VCo-prescaler<br />
- DAC components for medium and high speed up<br />
to 30 GSps<br />
- uWB transceiver components such as mixer<br />
correlator, broadband lnA<br />
- Static and dynamic divider circuits for up<br />
to 60 GHz<br />
- 5 GHz broadband modem (1 Gbps) for oFDM<br />
- 8-11 GHz and 16-19 GHz Integer-n plls with<br />
integrated low phase-noise VCo<br />
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- I 2 C-Interface<br />
- SPI-Interface<br />
- SPW (Signal Processing Worksystem) und MATLAB-<br />
Modelle für einen digitalen Basisband-Prozessor für<br />
ein IEEE 802.11a / p-konformes Modem einschliess-<br />
lich der Einheiten für Synchronisation und<br />
Kanalschätzung<br />
- Designs für Basisband-Verarbeitung (Viterbi<br />
Decoder, FFT / IFFT Prozessor, CORDIC Prozessor)<br />
- Synthetisierbares VHDL-Modell des kompletten<br />
IEEE 802.11a OFDM Basisband- Prozessors einschließlich<br />
der Synchronisation und Kanalschätzung<br />
- Echtzeit-Implementierung des MAC-Layer für ein<br />
IEEE 802.11a-kompatibles Modem für eingebettete<br />
Anwendungen, bestehend aus einem auf MIPS- oder<br />
ARM-Prozessoren laufenden C-Programm, sowie<br />
einem speziellen Hardware-Beschleuniger<br />
- Ein abstraktes SDL-Modell des MAC-Layer für ein<br />
IEEE 802.11a- und HiperLAN / 2-kompatibles Modem<br />
mit Testbenches für verschiedene Anwendungs-<br />
Szenarien<br />
- Ein abstraktes SDL-Modell für IEEE 802.15.3 und<br />
IEEE 802.15.4<br />
- 5-GHz-Link-Emulator und Entwicklungsumgebung<br />
für WLAN<br />
- TCP / IP-Prozessor einschließlich Hardware-<br />
Beschleuniger für das Protokoll sowie symmetrische<br />
und asymmetrische Verschlüsselung einschließlich<br />
MD5<br />
- Flexible ECC- und AES-Kryptoprozessoren<br />
- Basisband-Modelle und Realisierungen für<br />
Gigabit-WLAN<br />
- Kontext-sensitive verteilte Middleware-Plattform<br />
(PLASMA) für das drahtlose Internet<br />
Transfer von Technologien und Technologie-Modulen<br />
Das <strong>IHP</strong> bietet den Transfer seiner 0,25-µm-BiCMOS-<br />
Technologien und Technologiemodule (HBT, LDMOS)<br />
an. Die technologischen Parameter entsprechen weitgehend<br />
den oben für MPW & Prototyping genannten.<br />
- I 2 C-Interface<br />
- SpI-Interface<br />
- SpW (Signal processing Worksystem) and<br />
MAtlAB models of a digital baseband<br />
processor for an Ieee 802.11a / p compliant<br />
modem, including the synchronization and<br />
channel estimation units<br />
- Designs for baseband processing (Viterbi decoder,<br />
FFt / IFFt processor, CoRDIC processor)<br />
- Synthesizable VHDl model of the complete<br />
Ieee 802.11a oFDM baseband processor including<br />
synchronization and channel estimation<br />
- Realtime implementation of the MAC layer for an<br />
Ieee 802.11a compliant modem for embedded<br />
applications consisting of a C-program running<br />
on MIpS or ARM processors, and a dedicated hardware<br />
accelerator<br />
- Abstract SDl model of MAC layer for<br />
Ieee 802.11a and HiperlAn / 2 compliant<br />
modem with testbenches for various deployment<br />
scenarios<br />
- Abstract SDl model for Ieee 802.15.3 and<br />
Ieee 802.15.4<br />
- 5 GHz link emulator and WlAn design /<br />
debug kit<br />
- tCp / Ip-processor including hardware<br />
accelerators for protocol and symmetric<br />
and asymmetric encryption including<br />
MD5<br />
- Flexible eCC and AeS cryptoprocessors<br />
- Baseband-models and realisations for<br />
Gigabit WlAn<br />
- Context-sensitive distributed Middleware plat-<br />
form (plASMA) for wireless internet applications<br />
Transfer of Technologies and Technology Modules<br />
IHp offers its 0.25 µm BiCMoS technologies and technology<br />
modules (HBt-Modules, lDMoS-Modules) for<br />
transfer. the technological parameters comply to a<br />
large extent with the parameters described above for<br />
MpW & prototyping.
A N G E b o T E U N D L E i S T U N G E N – D E L i V E R A b L E S A N D S E R V i C E S<br />
Unterstützung bei Prozess-Modulen<br />
Das <strong>IHP</strong> bietet Unterstützung bei der Realisierung spezieller<br />
Prozess-Module für Forschung und Entwicklung<br />
und für Prototyping bei geringen Volumina für Standard-Prozess-Module<br />
und Prozess-Schritte.<br />
Verfügbar sind u.a. folgende Prozess-Module:<br />
- Standard-Prozesse (Implantation, Ätzen, CMP &<br />
Abscheidung von Schichtstapeln wie thermisches<br />
SiO 2 , PSG, Si 3 N 4 , Al, TiN, W)<br />
- Epitaxie (Si, Si:C, SiGe, SiGe:C)<br />
- Optische Lithographie (i-Linie und 248 nm bis<br />
hinab zu 100 nm Strukturgröße)<br />
- Verkürzte Prozessabläufe.<br />
Fehleranalyse und Diagnostik<br />
Das <strong>IHP</strong> bietet Unterstützung bei der Ausbeuteerhöhung<br />
durch Fehleranalyse mit modernen Ausrüstungen<br />
wie z.B. AES, AFM, FIB, LST, REM, SIMS, STM und<br />
TEM.<br />
Process Module Support<br />
IHp offers support for advanced process<br />
modules for research and development<br />
purposes and small volume prototyping.<br />
process modules available include:<br />
- Standard processes (implantation, etching,<br />
CMp & deposition of layer stacks such<br />
as thermal Sio 2 , pSG, Si 3 n 4 , Al, tin, W)<br />
- epitaxy (Si, Si:C, SiGe, SiGe:C)<br />
- optical lithography (i-line and 248 nm down<br />
to 100 nm structure size)<br />
- Short-flow processing.<br />
Failure Mode Analysis and Diagnostics<br />
IHp offers support for yield enhancement through<br />
failure mode analysis with state-of-the-art equipment,<br />
including AeS, AFM, FIB, lSt, SeM, SIMS, StM<br />
and teM.<br />
Für weitere Informationen wenden Sie sich bitte an: For more information please contact:<br />
Dr. Wolfgang Kissinger Dr. René Scholz<br />
(General contact) (MPW & Prototyping contact)<br />
<strong>IHP</strong> <strong>IHP</strong><br />
Im Technologiepark 25 Im Technologiepark 25<br />
15236 Frankfurt (Oder), Germany 15236 Frankfurt (Oder), Germany<br />
Email: kissinger@ihp-microelectronics.com Email : scholz@ihp-microelectronics.com<br />
Tel: +49 335 56 25 410 Tel : +49 335 56 25 647<br />
Fax: +49 335 56 25 222 Fax +49 335 56 25 327<br />
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Wegbeschreibung zum <strong>IHP</strong><br />
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W E G b E S C H R E i b U N G Z U M i H P – D i R E C T i o N S T o i H P<br />
per Flugzeug<br />
- Vom Flughafen Berlin-Tegel mit der Buslinie X9 bis<br />
Bahnhof Berlin-Zoologischer Garten (19 Minuten);<br />
dann mit dem RegionalExpress RE 1 bis Frankfurt<br />
(Oder) Hauptbahnhof (ca. 1 Stunde 20 Minuten).<br />
- Vom Flughafen Berlin-Schönefeld mit dem Airport-<br />
Express oder der S-Bahnlinie S 9 bis Bahnhof Berlin-Ostbahnhof<br />
(19 bzw. 32 Minuten); dann mit dem<br />
RegionalExpress RE 1 bis Frankfurt (Oder) Hauptbahnhof<br />
(ca. 1 Stunde).<br />
- Vom Flughafen Berlin-Tempelhof mit der U-Bahnlinie<br />
U 6 Richtung Alt-Tegel bis zur Haltestelle Friedrichstraße<br />
(11 Minuten); umsteigen in den Regional-<br />
Express RE 1 bis Frankfurt (Oder) Hauptbahnhof<br />
(ca. 1 Stunde 15 Minuten).<br />
per Bahn<br />
- Von den Berliner Bahnhöfen Zoologischer Garten,<br />
Hauptbahnhof, Friedrichstraße, Alexanderplatz<br />
oder Ostbahnhof mit dem RegionalExpress RE 1 bis<br />
Frankfurt ( Oder) Hauptbahnhof.<br />
per Auto<br />
- Über den Berliner Ring auf die Autobahn A 12 in Richtung<br />
Frankfurt (Oder) / Warschau; Abfahrt Frankfurt<br />
(Oder)-West, an der Ampel links in Richtung Beeskow<br />
und dem Wegweiser „Technologiepark Ostbrandenburg“<br />
folgen.<br />
per Straßenbahn in Frankfurt (Oder)<br />
- Ab Frankfurt (Oder) Hauptbahnhof mit der Linie 3<br />
oder 4 in Richtung Markendorf Ort bis Haltestelle<br />
Technologiepark (14 Minuten).<br />
Directions to iHP<br />
by plane<br />
- From Berlin-tegel Airport take the bus X9 to the<br />
railway station Berlin-Zoologischer Garten (19 minutes);<br />
then take the Regionalexpress Re 1 to Frankfurt<br />
(oder) Hauptbahnhof (appr. 1 hour 20 minutes).<br />
- From Berlin-Schönefeld Airport take the Airport-<br />
express or the S-Bahn line S 9 to the railway<br />
station Berlin ostbahnhof (19 resp. 32 minutes);<br />
then take the Regionalexpress Re 1 to<br />
Frankfurt (oder) Hauptbahnhof (appr. 1 hour).<br />
- From Berlin-tempelhof Airport take the subway<br />
line u 6 in the direction Alt-tegel to the station<br />
Friedrichstraße (11 minutes); there transfer to<br />
the Regionalexpress Re 1 to Frankfurt (oder)<br />
Hauptbahnhof (appr. 1 hour 15 minutes).<br />
by train<br />
- take the train Regionalexpress Re 1 from the<br />
Berlin railway stations Zoologischer Garten,<br />
Hauptbahnhof, Friedrichstraße, Alexanderplatz<br />
or ostbahnhof to Frankfurt (oder) Hauptbahnhof.<br />
by car<br />
- take the highway A 12 from Berlin in the direction<br />
Frankfurt (oder) / Warschau (Warsaw); take<br />
exit Frankfurt (oder)-West, at the traffic lights<br />
turn left in the direction Beeskow and follow<br />
the signs to “technologiepark ostbrandenburg”.<br />
by tram in Frankfurt (oder)<br />
- take the tram 3 or 4 from railway station Frankfurt<br />
(oder) Hauptbahnhof in the direction Markendorf<br />
ort to technologiepark (14 minutes).
Herausgeber / Publisher<br />
IHp GmbH – Innovations for High performance <strong>Microelectronics</strong><br />
/ Institut für innovative Mikroelektronik<br />
Postadresse / Postbox<br />
postfach 1466 / postbox 1466<br />
15204 Frankfurt (oder)<br />
Deutschland / Germany<br />
Besucheradresse / Address for Visitors<br />
Im technologiepark 25<br />
15236 Frankfurt (oder)<br />
Deutschland / Germany<br />
Telefon / Fon +49 335 56 25 0<br />
Telefax / Fax +49 336 56 25 300<br />
e-Mail ihp@ihp-microelectronics.com<br />
Internet www.ihp-microelectronics.com<br />
i M P R E S S U M – i M P R i N T<br />
Redaktion / Editors<br />
Dr. Wolfgang Kissinger / Heidrun Förster<br />
Gesamtherstellung / Production in design and layout<br />
GIRAFFe Werbeagentur<br />
leipziger Straße 187<br />
15232 Frankfurt (oder)<br />
Telefon / Fon +49 335 50 46 46<br />
Telefax / Fax +49 336 50 46 45<br />
e-Mail kontakt@giraffe.de<br />
Internet www.giraffe.de<br />
Bildnachweise / Photocredits<br />
IHp, Winfried Mausolf, Rainer Weißflog<br />
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N o T i Z E N – N o T E S<br />
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