Deliverables and Services - IHP Microelectronics

More documents

Recommendations

Info

92 A n n u A l R e p o R t 2 0 0 9 e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (45) Combined XBIC / µ-XrF / µ-XAS / dLtS Investigation of Chemical Character and electrical properties of Cu and Ni precipitates in Silicon M. trushin, o. Vyvenko, W. Seifert, M. Kittler, I. Zizak, A. erko, M. Seibt, C. Rudolf physica Status Solidi C 6, 1868 (2009) Combination of DltS method and synchrotron-based analytical microprobe techniques was used to study the precipitation of Cu and ni atoms at two kinds of structural defects in silicon lattice: dislocation network created by direct wafer bonding and oxygeninduced microdefects. Results of our measurements revealed the difference in the preferred precipitation places: ni particles in form of niSi 2 were found only at the dislocation network, while Cu particles in form of Cu 3 Si were found both at the dislocation network and at the oxygen-induced microdefects. DltS measurements showed ni acceptor levels in ni contaminated sample and a broad band related to Cu precipitates in Cu contaminated one. In case of simultaneous Cu and ni contamination niSi 2 and Cu 3 Si precipitates were found definitely at the same places indicating therefore that the metals interact during precipitation. DltS showed the superposition of spectra for only ni and for only Cu contaminated samples. (46) Iron-oxygen Interaction in Silicon: A Combined XBIC / XrF-eBIC-dLtS Study of precipitation and Complex Building M. trushin, o. Vyvenko, W. Seifert, G. Jia, M. Kittler physica B: Condensed Matter 404, 4645 (2009) Iron–oxygen interaction in the Czochralski-grown silicon (CZ-Si) giving rise to their final precipitated state was investigated by means of a combination of electrical and element-sensitive techniques. the samples studied were intentionally contaminated with iron at 1150 °C and then they were annealed at temperatures of 850 and 950 °C to stimulate precipitate formation. Fe-related defect levels in silicon band gap and spatial distributions of iron-related precipitates were monitored after each annealing step. It was found that FeB-pairs being the dominant defects in as-contaminated sample transformed completely to the stable Feo-related complexes that served as precursors for further iron–oxygen co-precipitation. (47) pulse-Induced Low-power resistive Switching in Hfo 2 Metal-Insulator-Metal diodes for Nonvolatile Memory Applications Ch. Walczyk, Ch. Wenger, R. Sohal, M. lukosius, A. Fox, J. Dabrowski, D. Wolansky, B. tillack, H.-J. Müssig, t. Schroeder Journal of Applied physics 105, 114103 (2009) the conduction process as well as the unipolar resistive switching behavior of Au / Hfo 2 / tin metal-insulator-metal structures were investigated for future nonvolatile memory applications. With current-voltage measurements performed at different temperatures (200 – 400 K), the poole–Frenkel effect as conduction process was identified. In particular, we extracted a trap energy level at Φ t =0.35±0.05 eV below the Hfo 2 conduction band to which a microscopic origin is tentatively assigned. From current-voltage measurements of Au / Hfo 2 / tin structures, low-power (as low as 120 µW) resistive switching was observed. the required forming process is shown to be an energy-induced phenomenon. the characteristics include electric pulse-induced resistive switching by applying pulses up to 100 µs and a retention time upon continuous nondestructive readout of more than 10 4 s. (48) Band Alignment and electron traps in y 2 o 3 Layers deposited on (100) Si W.-Ch. Wang, M. Badylevich, V.V. Afanas‘jev, A. Stesmans, S. Van elshocht, M. lukosius, Ch. Walczyk, Ch. Wenger Applied physics letters 95, 132903 (2009) Y 2 o 3 films deposited by atomic vapor deposition on (100)Si with a 2 or 5 nm thick pregrown thermal Sio 2 are investigated as possible charge trapping layers. Analysis of these structures using spectroscopic ellipsometry, photoconductivity, and internal photoemission reveals that Y 2 o 3 has a 5.6 eV wide optical
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S bandgap and a 2.0 eV conduction band offset with silicon. photo(dis)charging experiments show that the optical energy depth of most of the traps exceeds 1.5 eV with respect to the Y 2 o 3 conduction band, explaining the observed charge retention time of ~10 8 s at room temperature, even in the absence of a blocking insulator. (49) postdeposition Annealing Induced transition from Hexagonal pr 2 o 3 to Cubic pro 2 Films on Si(111) t. Weisemoeller, F. Bertram, S. Gevers, A. Greuling, C. Deiter, H. tobergte, M. neumann, A. Giussani, t. Schroeder, J. Wollschläger Journal of Applied physics 105, 124108 (2009) Films of hexagonal praseodymium sesquioxide (h-pr 2 o 3 ) were deposited on Si(111) by molecular beam epitaxy and thereafter annealed in 1 atm oxygen at different temperatures, ranging from 100 to 700 °C. the films of the samples annealed at 300 °C or more were transformed to pro 2 with B-oriented Fm3 - m structure, while films annealed at lower temperatures kept the hexagonal structure. the films are composed of pro 2 and pro 2-delta species, which coexist laterally and are tetragonally distorted due to the interaction at the interface between oxide film and Si substrate. Compared to pro 2 , pro 2-delta has the same cubic structure but with oxygen vacancies. the oxygen vacancies are partly ordered and increase the vertical lattice constant of the film, whereas the lateral lattice constant is almost identical for both species and on all samples. the latter lattice constant matches the lattice constant of the originally crystallized hexagonal praseodymium sesquioxide. that means that no long range reordering of the praseodymium atoms takes place during the phase transformation. (50) the Influence of the electrode Material on Hfo 2 MIM Capacitors Ch. Wenger, M. lukosius, H.-J. Müssig, G. Ruhl, S. pasko, Ch. lohe Journal of Vacuum Science and technology B 27, 286 (2009) tan and tin are investigated as bottom electrode materials for Metal-Insulator-Metal (MIM) capacitors applications. Atomic Vapour Deposited (AVD) Hfo 2 films are used as high-k dielectric. the influence of the interfacial layer between Hfo 2 and the bottom electrode on the electrical performance of MIM capacitors is evaluated. the capacitance density as well as the capacitance voltage linearity of high-k MIM capacitors is affected by the electrode material. there is also an impact by tan and tin on leakage current density and breakdown strength of the devices. (51) the role of the Hfo 2 -tiN Interface in Voltage Nonlinearities of Metal-Insulator- Metal Capacitors Ch. Wenger, M. lukosius, H.-J. Müssig, S. pasko, Ch. lohe thin Solid Films 517, 6334 (2009) the high-k Metal-Insulator-Metal (MIM) capacitor Back-end-of-line (Beol) integration into mixed signal and Radio Frequency (RF) circuits is characterized by the effort toward optimizing the capacitance voltage linearity. this letter is focused on the role of the tio x n y -based interfacial layer with respect to Capacitance-Voltage C(V) curves of Au / Hfo 2 / tin MIM capacitors. the correlation between the quadratic capacitance-voltage variation and interfacial layer thickness is demonstrated. the quadratic voltage coefficient of the dielectric stack can be reduced by increasing the thickness of the tio x n y layer. A n n u A l R e p o R t 2 0 0 9 9
Page 1 and 2:
Annual Report 2009 A n n u A l R e
Page 3 and 4:
Die Forschungsarbeiten des IHP erm
Page 5 and 6:
I N H A L t S V e r Z e I C H N I S
Page 8 and 9:
8 A n n u A l R e p o R t 2 0 0 9 F
Page 10 and 11:
Die Forschungsprogramme haben die f
Page 12 and 13:
Technologieplattform für drahtlose
Page 14 and 15:
A n n u A l R e p o R t 2 0 0 9 d A
Page 16 and 17:
Wissenschaftliche Ergebnisse Im Fol
Page 18 and 19:
Ein erster sicherer Knoten für dra
Page 20 and 21:
In Zusammenarbeit mit ESA und DLR w
Page 22 and 23:
integrierten Wellenleitern konnten
Page 24 and 25:
sind in der Automobilelektronik ein
Page 26 and 27:
DFG Cluster - Antrag unter Beteilig
Page 28 and 29:
28 A n n u A l R e p o R t 2 0 0 9
Page 30 and 31:
Abb. 1: Die Architektur des MAC-Pro
Page 32 and 33:
GALS-Interface für die Integration
Page 34 and 35:
A n n u A l R e p o R t 2 0 0 9 A u
Page 36 and 37:
6 A n n u A l R e p o R t 2 0 0 9 A
Page 38 and 39:
TANDEM IR-UWB Kommunikation für dr
Page 40 and 41:
122 GHz Empfänger in SiGe 0 A n n
Page 42 and 43: Strahlungsfester Frequenzsynthesize
Page 44 and 45: 4 Bit, 16 GS /s Analog-Digital-Umse
Page 46 and 47: 0,13-µm-BiCMOS-Technologie 6 A n n
Page 48 and 49: RF-MEMS Integration 8 A n n u A l R
Page 50 and 51: 0 A n n u A l R e p o R t 2 0 0 9 A
Page 54 and 55: A n n u A l R e p o R t 2 0 0 9 A u
Page 56 and 57: TiN/HfO 2 /Ti/TiN MIM Strukturen f
Page 60 and 61: 60 A n n u A l R e p o R t 2 0 0 9
Page 64 and 65: 6 A n n u A l R e p o R t 2 0 0 9 G
Page 66 and 67: wurden mit dem Schlussbericht erfol
Page 68 and 69: Gemeinsames Labor IHP/TH Wildau (FH
Page 74 and 75: G A S t w I S S e N S C H A F t L e
Page 76 and 77: G A S t w I S S e N S C H A F t L e
Page 84 and 85: 8 A n n u A l R e p o R t 2 0 0 9 e
Page 100 and 101: (107) A 0.13 µm SiGe BiCMoS techno
Page 102 and 103: Eingeladene Vorträge Invited prese
Page 106 and 107: Vorträge presentations (1) Formati
Page 108 and 109: (21) on prolonging Sensornode Gataw
Page 110 and 111: (42) Lateral Inductive Coupling for
Page 112 and 113: (63) evaluation Criteria for effici
Page 114 and 115: (86) Si / Sio 2 MQw Stacks for 3 rd
Page 116 and 117: (105) Highly robust X-Band LNA with
Page 118 and 119: (124) electronic States of oxygen-f
Page 120 and 121: Monographien Monographs (1) Short-r
Page 122 and 123: (15) robuste Synchronisation für e
Page 132 and 133: Wegbeschreibung zum IHP 2 A n n u A
Page 134: A n n u A l R e p o R t 2 0 0 9 IHP
show all

Deliverables and Services - IHP Microelectronics

Create successful ePaper yourself

Delete template?

Save as template?