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90 A n n u A l R e p o R t 2 0 0 9 e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (39) on the Band Gaps and electronic Structure of thin Single Crystalline praseodymium oxide Layers on Si(111) o. Seifarth, J. Dabrowski, p. Zaumseil, S. Müller, D. Schmeißer, H.-J. Müssig, t. Schroeder Journal of Vacuum Science and technology B 27, 271 (2009) the influence of stoichiometry and crystal structure on the electronic properties of single crystalline cubic pro 2 (111), cubic pr 2 o 3 (111), and hexagonal pr 2 o 3 (0001) thin film heterostructures on Si(111) was investigated by synchrotron radiation based photoemission electron spectroscopy (peS) and x-ray absorption spectroscopy (XAS). A detailed analysis of the complex satellite structures of peS pr 3d lines of the various pr oxide phases is given. peS was in addition applied to study the o 2p derived valence band structure and the positions of the occupied pr 4f state density. It is found by a combined peS-XAS study that especially the band gap values strongly depend on the stoichiometry and crystal structure of the single crystalline pr oxide layer. Furthermore, the close structure relationship between cubic pr 2 o 3 (111) and pro 2 (111) films is probably the reason for the detection of nonstoichiometric behavior, an effect which is far less pronounced in case of hexagonal pr 2 o 3 (0001) layers. A possible origin of this effect is given by a surface modified valence change and therefore of importance to understand in future the epitaxial overgrowth of these oxide buffer heterostructures by alternative semiconductors such as germanium. (40) Synchrotron Microscopy and Spectroscopy for Analysis of Crystal defects in Silicon W. Seifert, o. Vyvenko, t. Arguirov, A. erko, M. Kittler, C. Rudolf, M. Salome, M. trushin, I. Zizak physica Status Solidi C 6, 765 (2009) the paper discusses the synchrotron-based microprobe techniques XBIC (X-ray beam induced current), - XRF (X-ray fluorescence microscopy) and -XAS (X-ray absorption microspectroscopy) and their application for studying electrical activity of defects and precipitation of transition metals in Si materials. Investigations were performed on samples of block-cast multicrystalline Si and on model samples cut from a bonded monocrystalline wafer. to analyze the precipitation sites, ni, Cu and Fe were introduced intentionally into the samples. the detected precipitates were found to consist of silicides. evidence for metal precipitates was also found in virtually uncontaminated as-grown block-cast Si. Besides ni precipitates detected at a recombination active grain boundary, particles containing one or several metals (Cu, Fe, ti, V) were observed. unexpectedly, these particles seem to exhibit low only recombination activity. Further studies are necessary to identify their nature. (41) Synchrotron-based Investigation of Iron precipitation in Multicrystalline Silicon W. Seifert, o. Vyvenko, t. Arguirov, M. Kittler, M. Salome, M. Seibt, M. trushin Superlattices and Microstructures 45, 168 (2009) We report on investigations of the precipitation of iron in block-cast multicrystalline silicon using the techniques of X-ray beam induced current, X-ray fluorescence microscopy and X-ray absorption microspectroscopy. the samples studied were intentionally contaminated with iron and annealed at temperatures between 850 and 1050 °C. Annealing at 950 °C was found to lead to well detectable iron precipitation inside the grains and at grain boundaries. Small only iron clusters were detected after the 850 °C anneal while no iron clusters were found after the 1050 °C treatment. X-ray absorption near edge structure analyses of the iron clusters revealed mostly iron silicide and in one case iron oxide. under the given condition at the beamline, the detection sensitivity for iron was estimated to be 4×10 7 atoms, corresponding to a spherical FeSi 2 particle of 40 nm radius.
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (42) thermal oxidation of CVd Grown tungsten Layers on Si Substrates for embedded Non-Volatile Memory Application R. Sohal, Ch. Walczyk, p. Zaumseil, D. Wolansky, A. Fox, B. tillack, H.-J. Müssig, t. Schroeder thin Solid Films 517, 4534 (2009) this research is targeted to enhance the functionality of bipolar complementary metal-oxide-semiconductor by innovative concepts of embedded resistive random access memory (RRAM) cells integration in the backend-of-line (Beol) region. the material of our interest is tungsten oxide as an insulator in RRAM cells and we focussed on the growth and characterisation of closed tungsten oxide layers. In this materials science study, we investigated the tungsten oxidation process under Beol constraints (
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