Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
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88 A n n u A l R e p o R t 2 0 0 9<br />
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S<br />
(35) Growth of praseodymium oxide on Si(111)<br />
under oxygen deficient Conditions<br />
A. Schaefer, V. Zielasek, th. Schmidt,<br />
A. S<strong>and</strong>ell, M. Schowalter, o. Seifarth,<br />
l.e. Walle, Ch. Schulz, J. Wollschläger,<br />
t. Schroeder, A. Rosenauer, J. Falta, M. Bäumer<br />
physical Review B 80, 045414 (2009)<br />
Surface science studies of thin praseodymium oxide<br />
films grown on silicon substrates are of high interest<br />
in view of applications in such different fields<br />
as microelectronics <strong>and</strong> heterogeneous catalysis. In<br />
particular, a detailed characterization of the growth<br />
<strong>and</strong> the final structure of the films are m<strong>and</strong>atory to<br />
achieve a fundamental underst<strong>and</strong>ing of such topics<br />
as oxygen mobility <strong>and</strong> defect structure, <strong>and</strong> their<br />
role for the electronic <strong>and</strong> chemical properties. In<br />
this paper, the MBe growth of praseodymium oxide<br />
films on Si(111) substrates was investigated at lowdeposition<br />
rates (0.06 nm / min) <strong>and</strong> low-oxygen partial<br />
pressures (p(o 2 )