Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
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e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S<br />
(31) Correlation of electrical <strong>and</strong> Luminescence<br />
properties of dislocation Networks with its<br />
Microscopic Structure<br />
t. Mchedlidze, t. Wilhelm, t. Arguirov,<br />
M. trushin, M. Reiche, M. Kittler<br />
physica Status Solidi C 6, 1817 (2009)<br />
the direct bonding of Si wafers reproducibly forms<br />
dislocation networks (Dn) with a microscopic structure<br />
defined by the mutual crystallographic orientation<br />
between the pair of wafers used for the bonding<br />
procedure. this allows studying the electrical <strong>and</strong><br />
optical properties of specific dislocations. In the present<br />
work three different Dn structures were investigated<br />
using transmission electron microscopy (teM),<br />
photoluminescence (pl) <strong>and</strong> deep level transient<br />
spectroscopy (DltS). the results show close correlation<br />
between the structural, electrical <strong>and</strong> optical<br />
properties of dislocations <strong>and</strong> opens a possibility to<br />
identify structural peculiarities of the dislocations<br />
responsible for the high intensity of photoluminescence.<br />
namely, the obtained results suggest that pl<br />
at ~0.8 eV is related to screw dislocations in Dn.<br />
(32) electroluminescence from p-i-n Structure<br />
Fabricated using Crystalline Silicon on<br />
Glass technology<br />
t. Mchedlidze, t. Arguirov, M. Holla, M. Kittler<br />
Journal of Applied physics 105, 093107<br />
(2009)<br />
Strong electroluminescence was detected at room<br />
temperature from a p-i-n structure fabricated using<br />
crystalline silicon on glass technology. the luminescence<br />
spectra at small to moderate carrier injection<br />
levels contains strong peak with maximum at energy<br />
position e ph ~0.8 eV. Additionally, a broad emission<br />
b<strong>and</strong> in the range of energies 1 eV