Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
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86 A n n u A l R e p o R t 2 0 0 9<br />
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S<br />
(27) dielectric properties of thin Hf- <strong>and</strong><br />
Zr-based Alkaline earth pervoskite Layers<br />
G. lupina, J. Dabrowski, G. Kozlowksi,<br />
p. Dudek, G. lippert, H.-J. Müssig,<br />
t. Schroeder<br />
eCS transactions 25(6), 147 (2009)<br />
thin layers of high dielectric constant materials are<br />
of special interest for memory, logic, <strong>and</strong> passive<br />
microelectronic applications. Memory storage capacitors<br />
based on these materials should exhibit high<br />
capacitance densities <strong>and</strong> low leakage currents. Here,<br />
we investigate a group of Hf- <strong>and</strong> Zr-based alkaline<br />
earth perovskites for this application. It is found<br />
that thin layers of polycrystalline BaHfo 3 , SrHfo 3 , <strong>and</strong><br />
BaZro 3 can provide capacitance densities about 2<br />
times higher than that of amorphous Hfo 2 . post deposition<br />
annealing above ~ 700 °C is a crucial processing<br />
step required for obtaining the cubic perovskite<br />
phase with high dielectric constant.<br />
(28) Hf- <strong>and</strong> Zr-Based Alkaline earth pervoskite<br />
dielectrics for Memory Applications<br />
G. lupina, J. Dabrowski, G. Kozlowksi,<br />
p. Dudek, G. lippert, p. Zaumseil, H.-J. Müssig<br />
Microelectronic engineering 86(7-9), 1842<br />
(2009)<br />
We investigate a group of Hf- <strong>and</strong> Zr-based dielectrics<br />
crystallizing in the cubic perovskite structure for<br />
memory applications. the dielectrics are deposited<br />
in the form of thin layers (
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