Deliverables and Services - IHP Microelectronics

(23) Silicon Based Ir Light emitters
M. Kittler, t. Mchedlidze, t. Arguirov,
W. Seifert, M. Reiche, t. Wilhelm
physica Status Solidi C 6, 707 (2009)
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S
A new concept for Si-based light emitting diodes (leD)
capable of emitting at 1.5 µm is proposed. It utilizes
D-band radiation from dislocations in Si. Whether a
dislocation network created in a reproducible manner
by Si wafer direct bonding or dislocation loops
produced by Si ion implantation are employed. It is
also stated that dislocation loops do not lead to the
strong band-to-band electroluminescence at 1.1 µm
of p-n diodes, as it was predicted in the literature.
A MoS-leD (Fig. A) and p-n leDs emitting at 1.5 µm
are demonstrated by the authors. the maximum efficiency
that could be achieved at room temperature is
close to 1 %. levels in the bandgap which are probably
involved in the formation of the D1-line at 1.5 µm
are revealed. Moreover, the observation of the Stark
effect for the D1-line is reported. namely, a red / blueshift
of peak position was observed in electro- and
photo-luminescence when the electric field in the
p-n leD was increased / lowered. this effect may allow
realization of a novel Si-based light emitter with
electric field modulated emission wavelength.
(24) Comparison of evaluation Criteria for
efficient Gettering of Cu and Ni in Silicon
wafers
D. Kot, G. Kissinger, A. Sattler, W. von Ammon
eCS transactions 25, 67 (2009)
the establishment of an evaluation criterion for efficient
gettering of transition metals is a very important
and difficult issue in the field of defect engineering
on silicon wafers. In this work we present results of
an investigation of the getter efficiency for Cu and ni
on Czochralski silicon wafers containing various concentrations
of oxygen and vacancies. We compare the
results with other works on criteria for efficient gettering
and analyze their strengths and weaknesses.
(25) deposition of BaHfo 3 dielectric Layers for
Microelectronic Applications by pulsed
Injection MoCVd
G. lupina, M. lukosius, Ch. Wenger, p. Dudek,
G. Kozlowski, H.-J. Müssig, A. Abrutis
Chemical Vapor Deposition 15, 167 (2009)
this paper is concerned with the deposition and characterization
of thin layers of BaHfo 3 in the view of
storage capacitor applications in random access memories.
Growth of pure BaHfo 3 was obtained at deposition
temperatures of 600-700 °C using a combination
of Ba(thd) 2 and Hf(thd) 4 precursors. the resulting
layers crystallize in the cubic perovskite structure
and exhibit a dielectric constant of ~35.
(26) dielectric Constant and Leakage Currents
of thin BaZro 3 Layers
G. lupina, J. Dabrowski, p. Dudek,
G. Kozlowski, p. Zaumseil, G. lippert,
o. Fursenko, J. Bauer, C. Baristiran,
H.-J. Müssig
Applied physics letters 94, 152903 (2009)
Dielectric properties of thin (