Deliverables and Services - IHP Microelectronics

8 A n n u A l R e p o R t 2 0 0 9
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S
(18) An X-Band Low-power and Low-phase-
Noise VCo using Bondwire Inductor
K. Hu, F. Herzel, J.C. Scheytt
Advances in Radio Science 7, 243 (2009)
In this paper a low-power low-phase-noise voltagecontrolled-oscillator
(VCo) has been designed and fabricated
in 0.25 µm SiGe BiCMoS process. the resonator
of the VCo is implemented with on-chip MIM capacitors
and a single aluminum bondwire. A tail current filter is
realized to suppress flicker noise up-conversion. the
measured phase noise is -126.6 dBc / Hz at 1 MHz offset
from a 7.8 GHz carrier. the figure of merit (FoM) of
the VCo is -192.5 dBc / Hz and the VCo core consumes
4 mA from a 3.3V power supply. to the best of our
knowledge, this is the best FoM and the lowest phase
noise for bondwire VCos in the X-band. this VCo will be
used for satellite communications.
(19) eBIC / pL Investigations of dislocation
Networks produced by Silicon wafer direct
Bonding
G. Jia, W. Seifert, t. Mchedlidze, t. Arguirov,
M. Kittler, t. Wilhelm, M. Reiche
Superlattices and Microstructures 45, 314
(2009)
Dislocation networks (Dns) formed by silicon wafer
bonding were studied by means of electron Beam Induced
Current (eBIC) and photoluminescence (pl).
the measurements were performed on p–n junction
diode structures prepared by ion implantation. eBIC
signal was observed not only inside the diode structure,
but also far outside the diode area. this finding
demonstrates the ability of the bonding interface to
efficiently collect minority carriers and indicates a
high electrical conductivity of the dislocation network.
In addition, circular inhomogeneities of charge
collection were observed. the contrast of those regions
was bright at high beam energies and turned dark
or vanished at lower energies. the contrast behavior
of the circular areas can be explained by local variations
of collection efficiency and recombination at
the Dn, which might be a result of different density of
oxide precipitates. pl mappings at 0.794 and 1.081 eV
revealed similar circular areas.
(20) Advances in the understanding of oxide
precipitate Nucleation in Silicon
G. Kissinger, D. Kot, V.D. Akhmetov, A. Sattler,
t. Müller, W. von Ammon
eCS transactions 18, 995 (2009)
the influence of vacancy supersaturation installed
by RtA pre-treatments in CZ silicon wafers on oxide
precipitate nucleation was investigated in the temperature
range 700-1000 °C. precipitation is enhanced
at 800 °C and increases with increasing vacancy
concentration. Getter efficiency tests for Cu and ni
have shown that the threshold value of the normalized
inner surface is shifting to higher values for increasing
RtA temperature. this can be explained by a
morphological change of the oxide precipitates with
increasing vacancy concentration from plate-like to
spherical shape.
(21) preface
G. Kissinger
Materials Science and engineering B
159-160, 1 (2009)
(22) dislocations to be used as Active
Components in Novel Silicon devices
M. Kittler, M. Reiche
Advanced engineering Materials 11(4), 249
(2009)
the electrical and optical properties of dislocations
in Si are reviewed, namely dislocation-related recombination
and luminescence, transport of minority and
majority carriers along dislocations or the electric
field around dislocations. It is shown that Si wafer
direct bonding allows well-controlled formation of
dislocation networks, giving rise to adjustable dislocation
properties. Ideas for novel Si devices utilizing
dislocations as active components are presented. In
particular, dislocation-based light emitters at about
1.5 µm wavelength are demonstrated. Concepts for
dislocation-based conductive channels and fast Fets,
manipulators of biomolecules or thermo-electric generators
are sketched.