Deliverables and Services - IHP Microelectronics

82 A n n u A l R e p o R t 2 0 0 9
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S
(11) proton radiation damage on SiGe:C HBts
and Additivity of Ionization and
displacement effects
S. Diez, M. lozano, G. pellegrini,
F. Campabadal, I. Mandic, D. Knoll,
B. Heinemann, M. ullán
Ieee transactions on nuclear Science 56(4),
1931 (2009)
proton irradiation results are shown here for three
different SiGe:C HBt technologies from IHp Microelectronics.
High damages are observed although the
transistors remain usable for their application on the
Super-lHC. Considerations on the ionization and displacement
effects additivity are also presented in order
to validate parameterized experiments. this study
shows a reasonable agreement between proton irradiations
and previous gamma and neutron irradiations.
(12) plastic deformation in 200 mm Silicon
wafers Arising from Mechanical Loads in
Vertical-type and Horizontal-type Furnaces
A. Fischer, G. Kissinger, G. Ritter,
V. Akhmetov, M. Kittler
Materials Science and engineering B 159-
160, 103 (2009)
Slip-free high temperature processing of silicon wafers
at temperatures up to 1200 °C still remains an
engineering challenge. therefore, the authors present
the physical basis for estimation of gravitational
constraints in 200 mm silicon wafers subjected to
high temperature processes both in vertical-type and
horizontal-type furnaces. the load-induced shear
stresses in 200 mm silicon wafers stacked horizontally
and vertically were calculated using 3D-FeM analysis
of the displacement vector assuming linear elastic
behavior of the anisotropic material. For comparison
of the two complex loading cases and for relating
the effect of gravitational constraints to the mechanical
strength of the wafers, the invariant Von Mises
shear stress was chosen. Calculation of load-induced
stresses and determination of the onset of plastic
deformation have shown that for vertical-type boats
annealing at temperature >850 °C would lead to slip
formation in the bearing area of the wafer whereas
for horizontal-type boats largely slip-free processing
would be possible up to 1200 °C.
(13)
deep-uV technology for the Fabrication of
Bragg Gratings on SoI rib waveguides
I. Giuntoni, D. Stolarek, H.H. Richter,
St. Marschmeyer, J. Bauer, A. Gajda, J. Bruns,
B. tillack, K. petermann, l. Zimmermann
Ieee photonics technology letters 21(24),
1894 (2009)
In this paper we present a wafer level technology
based on deep ultra-violet (DuV) lithography to fabricate
Bragg gratings on SoI rib waveguides. the
principle of the used double patterning technique is
presented, as well the influence of the process variation
on the device performances. the fabricated
Bragg gratings were characterized and compared to
analogue structures patterned with electron-beam
lithography.
(14) Atomically Smooth and Single Crystalline
Ge(111) / cubic-pr 2 o 3 (111) / Si(111)
Heterostructures: Structural and Chemical
Composition Study
A. Giussani, p. Rodenbach, p. Zaumseil,
J. Dabrowski, R. Kurps, G. Weidner,
H.-J. Müssig, p. Storck, J. Wollschläger,
t. Schroeder
Journal of Applied physics 105, 033512
(2009)
engineered wafer systems are an important materials
science approach to achieve the globalintegration of
single crystalline Ge layers on the Si platform. Here,
we report the formation of singlecrystalline, fully relaxed
Ge(111) films by molecular beam epitaxial overgrowth
of cubic pr oxidebuffers on Si(111) substrates.
Reflection high-energy electron diffraction, scanning
electronmicroscopy, and x-ray reflectivity show that
the Ge epilayer is closed, flat, and has a sharp interface
with the underlying oxide template. Synchrotron
radiation grazing incidence x-ray diffraction and
transmission electron microscopy reveal the type-
A / B / A epitaxial relationship of the Ge(111) / cubic