Deliverables and Services - IHP Microelectronics

e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S
(7) Structure and defects of epitaxial Si(111)
Layers on y 2 o 3 (111) / Si(111) Support
Systems
C. Borschel, C. Ronning, H. Hofsäss,
A. Giussani, p. Zaumseil, Ch. Wenger, p. Storck,
t. Schroeder
Journal of Vacuum Science and technology B
27, 305 (2009)
Single crystalline epitaxial Si(111) / Y 2 o 3 (111) / Si(111)
heterostructures were grown by molecular beam epitaxy
and the morphology, structure, and defects were
characterized in detail. the growth of a closed and
smooth layer system is demonstrated by means of
reflection high energy electron diffraction measurements.
X-ray reflectometry and high resolution Rutherford
backscattering (RBS) experiments show
low surface and interface roughnesses. Channeling
RBS as well as x-ray diffraction pole figure studies
demonstrate the type A / B / A epitaxy relationship
of the Si(111) / Y 2 o 3 (111) / Si(111) heterostructure
and reveal the existence of defects in the epitaxial
Si(111) layer. these defects are studied in detail with
high resolution transmission electron microscopy,
disclosing microtwin formation and type B Si grains
as the major defects.
(8) Group-II Hafnate, Zirconate High-k
dielectrics for MIM Applications:
the defect data Issue
J. Dabrowski, p. Dudek, G. Kozlowski,
G. lupina, G. lippert, R. Schmidt, Ch. Walczyk,
Ch. Wenger
eCS transactions 25(6), 219 (2009)
We discuss the role of defects in metal oxides (mostly
in strontium hafnate, barium hafnate and barium zirconate).
the discussion is based on macroscopic and
microscopic (C-AFM) electrical measurements, ab initio
calculations for formation energies and electronic
structure of defects, numerical simulations of trapassisted
leakage, and on additional data provided by
SIMS and X-ray techniques. We argue that moisture
may be a hazardous contaminant.
(9) A Single-poly eeproM Cell for embedded
Memory Applications
A. Di Bartolomeo, H. Rücker, p. Schley, A. Fox,
S. lischke, K.-Y. na
Solid State electronics 53(6), 644 (2009)
We present a novel single-poly-silicon eepRoM cell
for embedded memory. the cell is integrated in a
0.13 µm RF-CMoS technology without process modifications
and is composed of an nMoS transistor and
a MoS capacitor on two isolated p-wells sharing a
floating poly-silicon layer. A two-polarity voltage of
±6 V is applied for writing and erasing using uniformchannel
Fowler–nordheim tunnelling. operations
faster than 1 ms, endurance over 10 +3 cycles and data
retention longer than 10 years are demonstrated.
(10) IHp SiGe:C BiCMoS technologies as a
Suitable Backup Solution for the AtLAS
upgrade Front-end electronics
S. Diez, M. lozano, G. pellegrini, I. Mandic,
D. Knoll, B. Heinemann, M. ullán
Ieee transactions on nuclear Science 56(4),
2449 (2009)
In this study we present the results of radiation
hardness studies performed on three different SiGe:
C BiCMoS technologies from Innovation for High performance
Microelectronics (IHp) for their application
in the Super-large Hadron Collider (S-lHC). We performed
gamma, neutron and proton irradiations on
the bipolar section of these technologies, in order to
consider ionization and atomic displacement damage
on electronic devices. Results show that transistors
from the IHp BiCMoS technologies remain functional
after the radiation levels expected in the innerdetector
(ID) of the AtlAS upgrade experiment. these
technologies are one of the candidates to constitute
the analog part of the Front-end chip in the AtlASupgrade
experiment, in the S-lHC.
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