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78 A n n u A l R e p o R t 2 0 0 9 p u B L I K A t I o N e N – p u B L I C A t I o N S Publications
Erschienene Publikationen published papers e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (1) Formation of Vacancy and oxygen Containing Complexes in Cz-Si by rapid thermal Annealing V.D. Akhmetov, G. Kissinger, W. von Ammon physica B: Condensed Matter 404(23-24), 4572 (2009) Changes of the oxygen (o) state in Czochralski silicon (Cz Si) caused by rapid thermal annealing (RtA) were studied by means of Fourier transform infrared spectroscopy (FtIR) in a highly sensitive mode. the formation of vacancy (V) and o containing complexes Vo 4 , previously known only from radiation experiments was observed as a result of RtA of Si wafers under clean room conditions without applying any irradiation. the use of half wafers during RtA processing and the use of the second untreated part of the same wafer as a reference during precise differential FtIR measurements allowed us to reveal, quite reproducibly, the small RtA induced changes in the absorbance in the level of ~10 -5 in absorbance units. Special attention was paid to separate the real contribution from the bulk from a possible surface related contribution in the recorded differential absorbance spectra. As a result, the quantitatively reproducible vibrational absorption band 985 cm -1 at room temperature known of Vo 4 was revealed in each of the examined wafers after RtA. the concentration of the observed complexes was approximately 1.4 x 10 13 cm -3 as estimated from the integrated calibration factor for interstitial oxygen (oi). no traces of Vo, Vo 2 , Vo 3 , Vo 5 and Vo 6 were found in a similar level. A moderate decrease, in the level of 10 13 -10 14 cm -3 , of the content of oxygen dimers (o 2i , 1012 cm -1 ) and trimers (o 3i , 1005 cm -1 ) in asgrown Si was observed after RtA. Changes in the concentration of oi did not exceed approximately 0.5 %. possible reasons for the preferential formation of Vo 4 by RtA are briefly discussed. (2) Hydrogen transformations in Si-Based Solar Structures Studied by precise FtIr Spectroscopy V.D. Akhmetov, A.G. ulyashin, A. Holt, M. Kittler Materials Science and engineering B 159-160, 182 (2009) In this work, an attempt to clarify the origin of a very pronounced effect of the minority carrier lifetime evolution in Sin x :H / a-Si:H / Si / a-Si:H / Sin x :H and a-Si:H / Si / a-Si:H solar cell structures prepared at temperatures around 200 °C upon heat treatments in the temperature interval of 445–550 °C is performed. For a comparison, heavily hydrogenated Si substrates were investigated as well. Analysis of all structures studied was performed by means of precise FtIR measurements and quasi-steady-state photoconductance (QsspC) techniques. Annealing-induced transformations of hydrogen-related states in Si-based structures upon heat treatments were monitored by a FtIR system with an enhanced sensitivity. Strong monotonic decrease of the intensity of various Si–H and n–H stretching bands was observed in all types of H-containing layers upon heat treatments applied. It is concluded that the transformations of H-related complexes in all structures studied are responsible for the observed changes in passivation efficiency of a-Si:H and Sin x :H / a-Si:H layers. (3) Interaction of oxygen with thermally Induced Vacancies in Czochralski Silicon V.D. Akhmetov, G. Kissinger, W. von Ammon Applied physics letters 94, 092105 (2009) Complexes consisting of a vacancy and four oxygen atoms, Vo 4 , were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RtA) at 1250 °C for 30 s in Ar / o 2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced sensitivity. An absorption band at 985 cm -1 , previously observed only in irradiated Si and assigned to a local vibration mode of Vo 4 , was measured reproducibly in all RtA treated wafers examined. A concentration of about 1.4 x 10 13 cm -3 of thermally induced Vo 4 was estimated from the inte- A n n u A l R e p o R t 2 0 0 9 79
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