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Deliverables and Services - IHP Microelectronics

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G A S t w I S S e N S C H A F t L e r u N d S e M I N A r e – G u e S t S C I e N t I S t S A N d S e M I N A r S<br />

Seminare / Seminars<br />

Vortragender Institution Thema<br />

presenter Institution topic<br />

1. prof. Marcus Baeumer university of Bremen, Germany “From the nano Scale to the Angstroem<br />

Scale: Adsorption <strong>and</strong> Reaction on<br />

nanostructured Surfaces“<br />

2. prof. Karol Froehlich Institute of electrical engineering “Recent Developments of Gan Based<br />

Bratislava, Slovakia High electron Mobility transistors“<br />

3. Dr. Glen R. Fox Fox Materials Consulting, llC Colorado, uSA “FeRAM technology“<br />

4. pD Dr. Michael Hanke paul Drude Institute for Solid State “Diffuse X-Ray Scattering at lowelectronics<br />

Berlin, Germany Dimensional nanostructures“<br />

5. Mr. pablo Herrero technical university Braunschweig, Germany “Microstrip Antenna low-cost<br />

technology at 122 GHz“<br />

6. Dr. Markus Heyde Fritz Haber Institute of the “Atomic Force Microscopy of oxide<br />

Max planck Society, Germany Surfaces“<br />

7. prof. Václav Holý Charles university in prague, Czech Republic “Diffuse Scattering from Relaxed<br />

epitaxial layers“<br />

8. Dr. Heinz-Wilhelm German Aerospace Center, Berlin, Germany “From Astronomy to Civil Security:<br />

Huebers terahertz-Research at the DlR“<br />

9. prof. ted Masselink Humboldt-university Berlin, Germany “Quantum-Cascade lasers: Semiconductor<br />

lasers for the MIR to tHz“<br />

10. prof. t. Mikolajick namlab Dresden, Germany “Semiconductor Memories: Current<br />

Status <strong>and</strong> Future 0utlook”<br />

11. prof. enrique A. universitat Autonoma de Barcelona, Spain “the life after Death of a Gate oxide”<br />

Mir<strong>and</strong>a “post-breakdown Conduction in<br />

ultra-thin Gate oxides: From physical<br />

Models to Circuit Applications“<br />

12. Dr. C. Merckling IMeC, leuven, Belgium “Molecular Beam epitaxy passivation<br />

Studies of Ge <strong>and</strong> III-V Semiconductors<br />

for Advanced CMoS“<br />

76 A n n u A l R e p o R t 2 0 0 9

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