Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
Deliverables and Services - IHP Microelectronics
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G A S t w I S S e N S C H A F t L e r u N d S e M I N A r e – G u e S t S C I e N t I S t S A N d S e M I N A r S<br />
Seminare / Seminars<br />
Vortragender Institution Thema<br />
presenter Institution topic<br />
1. prof. Marcus Baeumer university of Bremen, Germany “From the nano Scale to the Angstroem<br />
Scale: Adsorption <strong>and</strong> Reaction on<br />
nanostructured Surfaces“<br />
2. prof. Karol Froehlich Institute of electrical engineering “Recent Developments of Gan Based<br />
Bratislava, Slovakia High electron Mobility transistors“<br />
3. Dr. Glen R. Fox Fox Materials Consulting, llC Colorado, uSA “FeRAM technology“<br />
4. pD Dr. Michael Hanke paul Drude Institute for Solid State “Diffuse X-Ray Scattering at lowelectronics<br />
Berlin, Germany Dimensional nanostructures“<br />
5. Mr. pablo Herrero technical university Braunschweig, Germany “Microstrip Antenna low-cost<br />
technology at 122 GHz“<br />
6. Dr. Markus Heyde Fritz Haber Institute of the “Atomic Force Microscopy of oxide<br />
Max planck Society, Germany Surfaces“<br />
7. prof. Václav Holý Charles university in prague, Czech Republic “Diffuse Scattering from Relaxed<br />
epitaxial layers“<br />
8. Dr. Heinz-Wilhelm German Aerospace Center, Berlin, Germany “From Astronomy to Civil Security:<br />
Huebers terahertz-Research at the DlR“<br />
9. prof. ted Masselink Humboldt-university Berlin, Germany “Quantum-Cascade lasers: Semiconductor<br />
lasers for the MIR to tHz“<br />
10. prof. t. Mikolajick namlab Dresden, Germany “Semiconductor Memories: Current<br />
Status <strong>and</strong> Future 0utlook”<br />
11. prof. enrique A. universitat Autonoma de Barcelona, Spain “the life after Death of a Gate oxide”<br />
Mir<strong>and</strong>a “post-breakdown Conduction in<br />
ultra-thin Gate oxides: From physical<br />
Models to Circuit Applications“<br />
12. Dr. C. Merckling IMeC, leuven, Belgium “Molecular Beam epitaxy passivation<br />
Studies of Ge <strong>and</strong> III-V Semiconductors<br />
for Advanced CMoS“<br />
76 A n n u A l R e p o R t 2 0 0 9