Deliverables and Services - IHP Microelectronics

A N G e B o t e u N d L e I S t u N G e N – d e L I V e r A B L e S A N d S e r V I C e S
3. 0.25 µm SiGe BiCMoS with High-Voltage devices (SGB25V)
parameter High Standard High
performance Voltage
Bipolar Section
A e 0.42 x 0.84 µm 2
G3d-Module in SGB25V
peak f max 95 GHz 90 GHz 70 GHz
peak f t 75 GHz 45 GHz 25 GHz
BV Ceo 2.4 V 4.0 V 7.0 V
BV CBo > 7 V > 15 V > 20 V
V A > 50 V > 80 V > 100 V
β 190 190 190
NLd3Gd22C
n-LdMoS p-LdMoS
INLd3Gd13A **** pLd3Gd19B
BV * DSS 22 V
16 V -19 V
Vth 0.65 V
0.65 V - 0.55 V
I ** Dsat 170 µA / µm
175 µA / µm - 80 µA / µm
(V = 1.5 V)
GS (V = 1.5 V) GS (V = -1.5 V)
GS
(V = 12 V)
DS (V = 8 V) DS (V = -12 V)
DS
Ileakage < 10 pA / µm
< 10 pA / µm > - 10 pA / µm
(V = 12 V)
DS (V = 8 V) DS (V = -12 V)
DS
RON 4 Ωmm
3.5 Ωmm 14 Ωmm
Peak f *** max 48 GHz
40 GHz 27 GHz
Peak f *** T 18 GHz
23 GHz 9.5 GHz
*:@ 0 pA / µm **:@V DS = V ***:@V DS = V ****: substrate isolated
preliminary target parameters extracted from first prototype preparations.
the values given may differ from the final parameters.
A n n u A l R e p o R t 2 0 0 9
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