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(105) Highly robust X-Band LNA with extremely Short recovery time M. Rudolph, M. Dewitz, A. liero, I. Khali, n. Chaturvedi, Ch. Wipf, R.M. Bertenburg, J. Miller, J. Würfl, W. Heinrich, G. tränkle International Microwave Symposium, Boston, June 07 - 12, 2009, uSA (106) A 0.13 µm SiGe BiCMoS technology Featuring f t / f max of 240 / 330 GHz and Gate delays below 3ps H. Rücker, B. Heinemann, W. Winkler, R. Barth, J. Borngräber, J. Drews, G.G. Fischer, A. Fox, t. Grabolla, u. Haak, D. Knoll, F. Korndörfer, A. Mai, S. Marschmeyer, p. Schley, D. Schmidt, J. Schmidt, K. Schulz, B. tillack, D. Wolansky, Y. Yamamoto Ieee Bipolar / BiCMoS Circuits and technology Meeting (BCtM) 2009, Capri, october 13 - 14, 2009, Italy (107) Micro-raman Mapping of residual Stresses in Multicrystalline Block Cast Silicon Solar Cell Material: their relation to the Grain Boundary Microstructure and recombination Activity G. Sarau, M. Becker, S. Christiansen, M. Holla, W. Seifert 24 th european Solar energy Conference, Hamburg, September 21 - 25, 2009, Germany (108) 100 Gbps wireless Communication – Can we do it in Silicon? J.C. Scheytt Seminarreihe Mikrowellen, photonik und Kommunikation, Karlsruhe, May 07, 2009, Germany (109) A 122 GHz receiver in SiGe technology K. Schmalz, W. Winkler, J. Borngäber, W. Debski, B. Heinemann, J.C. Scheytt Ieee Bipolar / BiCMoS Circuits and technology Meeting (BCtM) 2009, Capri, october 13 - 14, 2009, Italy 6 A n n u A l R e p o R t 2 0 0 9 V o r t r ä G e – p r e S e N t A t I o N S (110) Fault-tolerant ASIC design for High System dependability G. Schoof, M. Methfessel, R. Kraemer 13 th International Forum on Advanced Microsystems for Automotive Applications (AMAA 2009), Berlin, May 05 - 06, 2009, Germany (111) tailoring Lattice parameters & Band Gaps with thin Crystalline Mixed oxide Buffer Layers on Si: the example of Lattice Matched epi-Si(111) / pryo 3 / Si(111) Heterostructures o. Seifarth, A. Giussani, p. Zaumseil, t. Schroeder Ieee Semiconductor Interface Specialist Conference (SISC 2009), Washington, December 02 - 05, 2009, uSA (112) the electronic Band diagram of thin pro 2 (111) / pr-Silicate Buffers on Si(111) and its relevance to dielectric properties o. Seifarth, C. Walczyk, G. lupina, p. Zaumseil, D. Schmeißer, H.-J. Müssig, t. Schroeder DpG Spring Meeting, Dresden, March 22 - 27, 2009, Germany (113) Fe / Cu precipitation at Si Nitride and Si Carbide particles in Intentionally Contaminated Block Cast Si W. Seifert, J. Bauer, A. erko, M. Holla, B. Gründig-Wendrock, M. Kittler, C. Knopf, G. Martinez-Criado, M. trushin, o. Vyvenko, I. Zizak 3 rd International Workshop on Crystalline Si Solar Cells, trondheim, June 02 - 05, 2009, norway
(114) Advanced MIMo Systems for Maximum reliability and performance Z. Stamenkovic DAAD Workshop on embedded System Design, Skopje, october 2009, Serbia (115) Architecture of an Analog Combining MIMo System Compliant to Ieee 802.11a Z. Stamenkovic, K. tittelbach-Helmrich, M. Krstic, J. perez, J. Via, J. Ibanez ICt-Mobile Summit 2009, Santander, June 10 - 12, 2009, Spain (116) Combining Internal Scan Chains and Boundary Scan register: A Case Study Z. Stamenkovic, M. Giles, F. Russi Ieee Region 8 euRoCon 2009 International Conference, St. petersburg, May 18 - 23, 2009, Russia (117) MAC protocol Implementation in rF-MIMo wLAN Z. Stamenkovic, e. Miletic, M. obrknezev, K. tittelbach-Helmrich 16 th Ieee International Conference on electronics, Circuits and Systems, Yasmin Hammamet, December 13 - 16, 2009, tunisia (118) SoC design Z. Stamenkovic DAAD Workshop on embedded System Design, university of nis, June 2009, Serbia (119) SoC design for wireless Sensor Networks Z. Stamenkovic DAAD Workshop on embedded System Design, Skopje, october 2009, Serbia V o r t r ä G e – p r e S e N t A t I o N S (120) A 360 degree phase Shifter for 60 GHz Applications in SiGe BiCMoS technology Y. Sun, J.C. Scheytt Ieee Ieee International Conference on Microwaves, Communications, Antennas and electronic Systems (CoMCAS 2009), tel-Aviv, november 09 - 11, 2009, Israel (121) Growth and Characterization of GaN Layers on Si(111) Substrates via Al 2 o 3 Buffer Systems l. tarnawska, M. Wosko, B. paszkiewicz, p. Zaumseil, t. Schroeder XI Seminar: Surfaces and Structures of thin Film layers, Szklarska poreba, May 19 - 22, 2009, poland (122) MoVpe Growth of GaN Layers on Si(111) Substrates via Al 2 o 3 Buffer Systems l. tarnawska, M. Wosko, B. paszkiewicz, p. Zaumseil, t. Schroeder 3 rd national Conference on nanotechnology nAno‘2009, Warsaw, June 22 - 26, 2009, poland (123) optimization of diffusion and Activation in Millisecond Annealing: a Study in the Application of differential Hall effect Measurements with the Continuous Anodic oxidation technique p.J. timans, Y.Z. Hu, J. Gelpey, S. McCoy, W. lerch, S. paul, D. Bolze International Workshop on InSIGHt in Semiconductor Device Fabrication, Metrology and Modeling (InSIGHt 2009), napa, April 26 - 29, 2009, uSA A n n u A l R e p o R t 2 0 0 9 7
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Annual Report 2009 A n n u A l R e
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Die Forschungsarbeiten des IHP erm
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I N H A L t S V e r Z e I C H N I S
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Technologieplattform für drahtlose
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integrierten Wellenleitern konnten
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sind in der Automobilelektronik ein
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DFG Cluster - Antrag unter Beteilig
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Abb. 1: Die Architektur des MAC-Pro
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GALS-Interface für die Integration
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TANDEM IR-UWB Kommunikation für dr
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122 GHz Empfänger in SiGe 0 A n n
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Strahlungsfester Frequenzsynthesize
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4 Bit, 16 GS /s Analog-Digital-Umse
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0,13-µm-BiCMOS-Technologie 6 A n n
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RF-MEMS Integration 8 A n n u A l R
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