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Deliverables and Services - IHP Microelectronics

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(105) Highly robust X-B<strong>and</strong> LNA with extremely<br />

Short recovery time<br />

M. Rudolph, M. Dewitz, A. liero, I. Khali,<br />

n. Chaturvedi, Ch. Wipf, R.M. Bertenburg,<br />

J. Miller, J. Würfl, W. Heinrich, G. tränkle<br />

International Microwave Symposium, Boston,<br />

June 07 - 12, 2009, uSA<br />

(106) A 0.13 µm SiGe BiCMoS technology<br />

Featuring f t / f max of 240 / 330 GHz <strong>and</strong><br />

Gate delays below 3ps<br />

H. Rücker, B. Heinemann, W. Winkler, R. Barth,<br />

J. Borngräber, J. Drews, G.G. Fischer, A. Fox,<br />

t. Grabolla, u. Haak, D. Knoll, F. Korndörfer,<br />

A. Mai, S. Marschmeyer, p. Schley, D. Schmidt,<br />

J. Schmidt, K. Schulz, B. tillack, D. Wolansky,<br />

Y. Yamamoto<br />

Ieee Bipolar / BiCMoS Circuits <strong>and</strong> technology<br />

Meeting (BCtM) 2009, Capri,<br />

october 13 - 14, 2009, Italy<br />

(107) Micro-raman Mapping of residual Stresses<br />

in Multicrystalline Block Cast Silicon Solar<br />

Cell Material: their relation to the Grain<br />

Boundary Microstructure <strong>and</strong><br />

recombination Activity<br />

G. Sarau, M. Becker, S. Christiansen, M. Holla,<br />

W. Seifert<br />

24 th european Solar energy Conference,<br />

Hamburg, September 21 - 25, 2009, Germany<br />

(108) 100 Gbps wireless Communication – Can<br />

we do it in Silicon?<br />

J.C. Scheytt<br />

Seminarreihe Mikrowellen, photonik und Kommunikation,<br />

Karlsruhe, May 07, 2009, Germany<br />

(109) A 122 GHz receiver in SiGe technology<br />

K. Schmalz, W. Winkler, J. Borngäber,<br />

W. Debski, B. Heinemann, J.C. Scheytt<br />

Ieee Bipolar / BiCMoS Circuits <strong>and</strong> technology<br />

Meeting (BCtM) 2009, Capri,<br />

october 13 - 14, 2009, Italy<br />

6 A n n u A l R e p o R t 2 0 0 9<br />

V o r t r ä G e – p r e S e N t A t I o N S<br />

(110) Fault-tolerant ASIC design for High System<br />

dependability<br />

G. Schoof, M. Methfessel, R. Kraemer<br />

13 th International Forum on Advanced<br />

Microsystems for Automotive Applications<br />

(AMAA 2009), Berlin,<br />

May 05 - 06, 2009, Germany<br />

(111) tailoring Lattice parameters & B<strong>and</strong> Gaps<br />

with thin Crystalline Mixed oxide Buffer<br />

Layers on Si: the example of Lattice<br />

Matched epi-Si(111) / pryo 3 / Si(111)<br />

Heterostructures<br />

o. Seifarth, A. Giussani, p. Zaumseil,<br />

t. Schroeder<br />

Ieee Semiconductor Interface Specialist<br />

Conference (SISC 2009), Washington,<br />

December 02 - 05, 2009, uSA<br />

(112) the electronic B<strong>and</strong> diagram of thin<br />

pro 2 (111) / pr-Silicate Buffers on Si(111)<br />

<strong>and</strong> its relevance to dielectric properties<br />

o. Seifarth, C. Walczyk, G. lupina, p. Zaumseil,<br />

D. Schmeißer, H.-J. Müssig, t. Schroeder<br />

DpG Spring Meeting, Dresden,<br />

March 22 - 27, 2009, Germany<br />

(113) Fe / Cu precipitation at Si Nitride <strong>and</strong> Si<br />

Carbide particles in Intentionally<br />

Contaminated Block Cast Si<br />

W. Seifert, J. Bauer, A. erko, M. Holla,<br />

B. Gründig-Wendrock, M. Kittler, C. Knopf,<br />

G. Martinez-Criado, M. trushin, o. Vyvenko,<br />

I. Zizak<br />

3 rd International Workshop on Crystalline Si<br />

Solar Cells, trondheim,<br />

June 02 - 05, 2009, norway

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