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Deliverables and Services - IHP Microelectronics

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(42) Lateral Inductive Coupling for Interchip<br />

Communication<br />

H. Gustat, V. Bhaya, e. Karge<br />

Ieee Semiconductors Conference Dresden<br />

2009 (SCD), April 29 - 30, 2009, Germany<br />

(43) power Consumption Aspects of FIr Filter<br />

Implementations for 100 Gb / s dQpSK<br />

receivers<br />

H. Gustat, J.C. Scheytt, F. Winkler<br />

Ieee Semiconductors Conference Dresden<br />

2009 (SCD), April 29 - 30, 2009, Germany<br />

(44) An Integrated 18 GHz Fractional-N-pLL in<br />

SiGe BiCMoS technology for Satellite<br />

Communications<br />

F. Herzel, S. A. osmany, K. Schmalz,<br />

W. Winkler, J.C. Scheytt, t. podrebersek,<br />

R. Follmann, H.-V. Heyer<br />

Ieee RFIC 2009, Boston,<br />

June 07 - 09, 2009, uSA<br />

(45) Status SiGe projekte<br />

H.-V. Heyer, J.C. Scheytt<br />

Industriekonferenz eee-Bauteile oberpfaffenhofen,<br />

February 03, 2009, Germany<br />

(46) Heavy Carbon Atomic-Layer doping at<br />

Si 1-x Ge x / Si Heterointerface<br />

t. Hirano, M. Sakuraba, B. tillack, J. Murota<br />

6 th International Conference on Silicon<br />

epitaxy <strong>and</strong> Heterostructures (ICSI-6),<br />

los Angeles, May 17 - 22, 2009, uSA<br />

(47) Analysis of Silicon Carbide <strong>and</strong> Silicon<br />

Nitride precipitates in Block Cast<br />

Multicrystalline Silicon<br />

M. Holla, t. Arguirov, W. Seifert, M. Kittler<br />

XIII International Autumn Meeting Gettering<br />

<strong>and</strong> Defect engineering in Semiconductor<br />

technology (GADeSt 2009), Döllnsee,<br />

September 26 - october 02, 2009, Germany<br />

0 A n n u A l R e p o R t 2 0 0 9<br />

V o r t r ä G e – p r e S e N t A t I o N S<br />

(48) defect Characterization of poly-Ge <strong>and</strong><br />

VFG-Grown Ge Material<br />

M. Holla, t. Arguirov, G. Jia, M. Kittler,<br />

C. Frank-Rotsch, F.M. Kiessling, p. Rudolph<br />

XIII International Autumn Meeting Gettering<br />

<strong>and</strong> Defect engineering in Semiconductor<br />

technology (GADeSt 2009), Döllnsee,<br />

September 26 - october 02, 2009, Germany<br />

(49) An Adjustable delay Cell at 1.4 GHz<br />

M. Hossain, n. Fiebig, J.C. Scheytt<br />

Kleinheubacher tagung, Miltenberg,<br />

September 28 - october 01, 2009, Germany<br />

(50) overview of MAC Layer enhancements for<br />

Ieee 802.15.4a<br />

J. Hund, R. Kraemer, C. Schwingenschlögl,<br />

A. Heinrich<br />

6 th Workshop on positioning, navigation <strong>and</strong><br />

Communication 2009 (WpnC‘09), Hannover,<br />

March 19, 2009, Germany<br />

(51) edX an prozess-Artefakten in einer<br />

0,13 µm BiCMoS technologie<br />

W. Höppner<br />

Anwendertreffen Mikroanalyse, Institut für<br />

Gießereitechnik, Düsseldorf,<br />

April 21 - 22, 2009, Germany<br />

(52) Heavy Nitrogen Atomic-Layer doping of<br />

Si 1-x Ge x epitaxially Grown on Si(100) by<br />

ultraclean Low-pressure CVd<br />

t. Kawashima, M. Sakuraba, B. tillack,<br />

J. Murota<br />

6 th International Conference on Silicon<br />

epitaxy <strong>and</strong> Heterostructures (ICSI-6),<br />

los Angeles, May 17 - 22, 2009, uSA

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