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Forschungszentrum Jülich GmbH Institut für Photovoltaik Electron Spin Resonance and Transient Photocurrent <strong>Measurements</strong> on Microcrystalline Silicon Thorsten Dylla Schriften des Forschungszentrums Jülich Reihe Energietechnik / Energy Technology Band / Volume 43 ISSN 1433-5522 ISBN 3-89336-410-2
Bibliographic information published by Die Deutsche Bibliothek. Die Deutsche Bibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data are available in the Internet at . Publisher and Distributor: Cover Design: Printer: Forschungszentrum Jülich GmbH Zentralbibliothek D-52425 Jülich Telefon (02461) 61-5368 · Telefax (02461) 61-6103 e-mail: zb-publikation@fz-juelich.de Internet: http://www.fz-juelich.de/zb Grafische Medien, Forschungszentrum Jülich GmbH Grafische Medien, Forschungszentrum Jülich GmbH Copyright: Forschungszentrum Jülich 2005 Schriften des Forschungszentrums Jülich Reihe Energietechnik / Energy Technology Band / Volume 43 D 188 (Diss., Berlin, Freie Univ., 2004) ISSN 1433-5522 ISBN 3-89336-410-2 Neither this book nor any part may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying, microfilming, and recording, or by any information storage and retrieval system, without permission in writing from the publisher.
Page 1 and 2: Forschungszentrum Jülich in der He
Page 6 and 7: Kurzfassung In der vorliegenden Arb
Page 8 and 9: Abstract The electronic properties
Page 10 and 11: Contents 1 Introduction 1 2 Fundame
Page 12 and 13: CONTENTS C Abbreviations, Physical
Page 14 and 15: Chapter 1 Introduction Solar cells
Page 16 and 17: defect states provided that they ar
Page 18 and 19: Chapter 8: In this chapter, the inf
Page 20 and 21: Chapter 2 Fundamentals In this firs
Page 22 and 23: 2.2 Electronic Density of States St
Page 24 and 25: 2.2 Electronic Density of States ta
Page 26 and 27: 2.2 Electronic Density of States Fi
Page 28 and 29: 2.3 Charge Carrier Transport influe
Page 30 and 31: 2.3 Charge Carrier Transport functi
Page 32 and 33: Chapter 3 Sample Preparation and Ch
Page 34 and 35: 3.1 Characterization Methods Figure
Page 36 and 37: 3.1 Characterization Methods Homoge
Page 38 and 39: 3.1 Characterization Methods µ Fig
Page 40 and 41: 3.1 Characterization Methods compar
Page 42 and 43: 3.1 Characterization Methods bution
Page 44 and 45: 3.1 Characterization Methods posite
Page 46 and 47: 3.2 Deposition Technique admixture
Page 48 and 49: 3.3 Sample Preparation 3.3.1 Sample
Page 50 and 51: 3.3 Sample Preparation reverse bias
Page 52 and 53: Chapter 4 Intrinsic Microcrystallin
Page 54 and 55:
4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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6.3 On the Origin of Instability Ef
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6.3 On the Origin of Instability Ef
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Chapter 7 Transient Photocurrent Me
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7.2 Transient Photocurrent Measurem
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7.3 Temperature Dependent Drift Mob
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7.4 Multiple Trapping in Exponentia
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7.5 Discussion Table 7.2: Multiple
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7.5 Discussion 7.5.3 The Meaning of
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Chapter 8 Schematic Density of Stat
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silicon as shown in Fig. 8.1 b, whi
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Chapter 9 Summary In the present wo
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Appendix A Algebraic Description of
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Eq. A.7 then becomes L(t) F = sin(
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Appendix B List of Samples Table B.
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Table B.3: Parameters of n-type µc
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Appendix C Abbreviations, Physical
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µ d Drift mobility µ d,h Hole dri
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Bibliography [1] E. Becquerel. Mém
Page 134 and 135:
BIBLIOGRAPHY [21] D. Will, C. Lerne
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BIBLIOGRAPHY [45] H. Overhof and M.
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BIBLIOGRAPHY [66] P.W. Anderson. Ab
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BIBLIOGRAPHY [93] J.W. Orton and M.
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BIBLIOGRAPHY [121] J.R. Haynes and
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BIBLIOGRAPHY [148] W. Luft and Y.S.
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BIBLIOGRAPHY [170] G.N. Advani, R.
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List of Publications 1. T. Dylla, R
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Acknowledgments At this point, I wa
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Schriften des Forschungszentrums J
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Forschungszentrum Jülich in der He
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