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Chapter 8: In this chapter, the information derived from the studies in Chapters 4-7 will be combined and summarized in a schematic picture of the density of states in both, a spatial and energetic sense. Chapter 9: In this last chapters, the most important results will be summarized and the conclusions are drawn. 5
6 Chapter 1: Introduction
Page 1 and 2: Forschungszentrum Jülich in der He
Page 4 and 5: Forschungszentrum Jülich GmbH Inst
Page 6 and 7: Kurzfassung In der vorliegenden Arb
Page 8 and 9: Abstract The electronic properties
Page 10 and 11: Contents 1 Introduction 1 2 Fundame
Page 12 and 13: CONTENTS C Abbreviations, Physical
Page 14 and 15: Chapter 1 Introduction Solar cells
Page 16 and 17: defect states provided that they ar
Page 20 and 21: Chapter 2 Fundamentals In this firs
Page 22 and 23: 2.2 Electronic Density of States St
Page 24 and 25: 2.2 Electronic Density of States ta
Page 26 and 27: 2.2 Electronic Density of States Fi
Page 28 and 29: 2.3 Charge Carrier Transport influe
Page 30 and 31: 2.3 Charge Carrier Transport functi
Page 32 and 33: Chapter 3 Sample Preparation and Ch
Page 34 and 35: 3.1 Characterization Methods Figure
Page 36 and 37: 3.1 Characterization Methods Homoge
Page 38 and 39: 3.1 Characterization Methods µ Fig
Page 40 and 41: 3.1 Characterization Methods compar
Page 42 and 43: 3.1 Characterization Methods bution
Page 44 and 45: 3.1 Characterization Methods posite
Page 46 and 47: 3.2 Deposition Technique admixture
Page 48 and 49: 3.3 Sample Preparation 3.3.1 Sample
Page 50 and 51: 3.3 Sample Preparation reverse bias
Page 52 and 53: Chapter 4 Intrinsic Microcrystallin
Page 54 and 55: 4.2 Electrical Conductivity Figure
Page 56 and 57: 4.3 ESR Signals and Paramagnetic St
Page 58 and 59: 4.3 ESR Signals and Paramagnetic St
Page 60 and 61: 4.4 Discussion - Relation between E
Page 62 and 63: 4.4 Discussion - Relation between E
Page 64 and 65: Chapter 5 N-Type Doped µc-Si:H In
Page 66 and 67: 5.2 Electrical Conductivity Figure
Page 68 and 69:
5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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6.3 On the Origin of Instability Ef
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6.3 On the Origin of Instability Ef
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Chapter 7 Transient Photocurrent Me
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7.2 Transient Photocurrent Measurem
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7.3 Temperature Dependent Drift Mob
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7.4 Multiple Trapping in Exponentia
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7.5 Discussion Table 7.2: Multiple
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7.5 Discussion 7.5.3 The Meaning of
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Chapter 8 Schematic Density of Stat
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silicon as shown in Fig. 8.1 b, whi
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Chapter 9 Summary In the present wo
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Appendix A Algebraic Description of
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Eq. A.7 then becomes L(t) F = sin(
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Appendix B List of Samples Table B.
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Table B.3: Parameters of n-type µc
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Appendix C Abbreviations, Physical
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µ d Drift mobility µ d,h Hole dri
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Bibliography [1] E. Becquerel. Mém
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BIBLIOGRAPHY [21] D. Will, C. Lerne
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BIBLIOGRAPHY [45] H. Overhof and M.
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BIBLIOGRAPHY [66] P.W. Anderson. Ab
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BIBLIOGRAPHY [93] J.W. Orton and M.
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BIBLIOGRAPHY [121] J.R. Haynes and
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BIBLIOGRAPHY [148] W. Luft and Y.S.
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BIBLIOGRAPHY [170] G.N. Advani, R.
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List of Publications 1. T. Dylla, R
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Acknowledgments At this point, I wa
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Schriften des Forschungszentrums J
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Forschungszentrum Jülich in der He
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