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List of Publications 1. T. Dylla, R. Carius, and F. Finger. Electron spin resonance and electronic conductivity in moderately doped n-type microcrystalline silicon as a probe for the density of gap states. Mater. Res. Soc. Proc., 715:333, 2002. 2. F. Finger, S. Klein, T. Dylla, A.L. Baia Neto, O. Vetterl, and R. Carius. Defects in microcrystalline silicon prepared with hot wire cvd. Mater. Res. Soc. Proc., 715:123, 2002. 3. F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur, and M. Gunes. Stability of microcrystalline silicon for thin film solar cell applications. IEE Proceedings-Circuits, Devices and Systems, 150(4):300, 2003. 4. S. Klein, F. Finger, R. Carius, T. Dylla, B. Rech, M. Grimm, L. Houben, and M. Stutzmann. Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells. Thin Solid Films, 430(1-2):202, 2003. 5. T. Dylla, F. Finger, and R. Carius. Adsorption and oxidation effects in microcrystalline silicon. Mater. Res. Soc. Proc., 762:81, 2003. 6. F. Finger, S. Klein, R. Carius, T. Dylla, O. Vetterl, and A.L.B. Neto. Microcrystalline silicon prepared with hot-wire cvd. J. Mater. Sci., Mater. Electron., 14(10-12):621, 2003. 7. F. Finger, L. Baia Neto, R. Carius, T. Dylla, and S. Klein. Paramagnetic defects in undoped microcrystalline silicon. Phys. Stat. Sol., 1(5):1248, 2004. 8. T. Dylla, E.A. Schiff, and F. Finger. Hole drift-mobility measurements and multiple-trapping in microcrystalline silicon. Mater. Res. Soc. Proc., 2004 in press. 135
136 BIBLIOGRAPHY
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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6.3 On the Origin of Instability Ef
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6.3 On the Origin of Instability Ef
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Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
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Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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