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BIBLIOGRAPHY [170] G.N. Advani, R. Beard, and L. Nanis. Gas measurement method. U.S. patent 4399684, 1977. [171] H.D. Le Vine. Method and apparatus for operating a gas sensor. U.S. patent 3906473, 1975. [172] Y.M. Cross and D.R. Pyke. An x-ray photoelectron spectroscopy study of the surface composition of tin and antimony mixed metal oxide catalysts. Advances in Catalysts, 30:97, 1981. [173] S.R. Morrison. Semiconductor gas sensors. Sensors and Actuators, 2:329, 1982. [174] S. Green and P. Kathirgamanathan. Effect of oxygen on the surface conductance of porous silicon: towards room temperature sensor applications. Mater. Lett., 52(1-2):106, 2002. [175] R. Carius. private communication, 2004. [176] N. Wyrsch, N. Beck, J. Meier, P. Torres, and S. Shah. Electric field profile in µc-si:h p-i-n devices. Mater. Res. Soc. Proc., 420:181, 1998. [177] H. Antoniadis and E.A. Schiff. Isotropy of drift mobilities in hydrogen amorphous silicon. Phys. Rev. B, 44(8):3627, 1981. [178] G. Juska, K. Arlauskas, K. Genevicius, and J. Kocka. Charge carrier transport in µc-si:h. Mater. Sci. Forum, 297-298:327, 1999. [179] G. Juška, M. Viliūnas, K. Arlauskas, N. Nekrasas, N. Wyrsch, and L. Feitknecht. Hole drift mobility in µc-si:h. Journal of Applied Physics, 89(9):4971, 2001. [180] R. Atta-Fynn, P. Biswas, P. Ordejn, and D.A. Drabold. Systematic study of electron localization in an amorphous semiconductor. Phys. Rev. B, 69:085207, 2004. [181] A. Yelon, B. Movaghar, and H.M. Branz. Origin and consequences of the compensation (meyer-neldel) law. Phys. Rev. B, 46:12244, 1992. [182] A. Yelon and B. Movaghar. Reply to ”comment on ‘origin and consequences of the compensation (meyer-neldel) law’”. Phys. Rev. B, 65:077202, 2002. [183] L.C. Chen, L.A. Hamel, and A. Yelon. Monte carlo simulations of meyerneldel effect on carrier time-of-flight in a-si:h. J. Non-Cryst. Solids, 220:254, 1997. 133
BIBLIOGRAPHY [184] Q. Gu, E.A. Schiff, J.B. Chevrier, and B. Equer. High-field electron-drift measurements and the mobility edge in hydrogenated amorphous silicon. Phys. Rev. B, 52:5695, 1995. [185] J.M. Marshall. Carrier diffusion in amorphous semiconductors. Reports on Progress in Physics, 46(10):1235, 1983. [186] E.A. Schiff. Trap-controlled dispersive transport and exponential band tails in amorphous silicon. Phys. Rev. B, 24(10):6189, 1981. [187] T. Tiedje and A. Rose. A physical interpretation of dispersive transport in disordered semiconductors. Solid State Communications, 37(1):49, 1981. [188] J. Orenstein and M. Kastner. Photocurrent transient spectroscopy: measurement of the density of localized states in a-as 2 se 3 . Phys. Rev. Lett., 46(21):1421, 1981. [189] J. Orenstein, M.A. Kastner, and V. Vaninov. Transient photoconductivity and photo-induced optical absorption in amorphous semiconductors. Philos. Mag. B, 46(1):23, 1982. 134
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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6.3 On the Origin of Instability Ef
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Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
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Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
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Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
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