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BIBLIOGRAPHY [148] W. Luft and Y.S. Tsuo. Hydrogenated Amorphous Silicon Alloy Depostion. Marcel Dekker Inc., New York, Basel, Hong Kong, 1993. [149] J. Perrin, O. Leroy, and M.C. Bordage. Cross-section, rate constants and transport coefficients in silane plasma. Contributions to Plasma Physics, 36:3, 1996. [150] A. Matsuda. Formation kinetics and control of microcrystallite in µc-si:h from glw discharge plasma. Journal of non-crystalline Solids, 59-60:767, 1983. [151] H. Matsumura. Catalytic chemical vapor deposition (ctl-cvd) method producing high quality hydrogenated amorphous silicon. Jpn. J. Appl. Phys. 2, Lett., 25(12):L949, 1986. [152] R.E.I. Schropp, K.F. Feenstra, E.C. Molenbroek, H. Meiling, and J.K. Rath. Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition. Philos. Mag. B, 76(3):309, 1997. [153] A.H. Mahan, J. Carapella, B.P. Nelson, R.S. Crandall, and I. Balberg. Deposition of device quality, low h content amorphous silicon. J. Appl. Phys., 69(9):6728, 1991. [154] J. Cifre, J. Bertomeu, J. Puigdollers, M.C. Polo, J. Andreu, and A. Lloret. Polycrystalline silicon films obtained by hot-wire chemical vapour deposition. Appl. Phys. A, A59(6):645, 1994. [155] R.E.I. Schropp, Y. Xu, E. Iwaniczko, G.A. Zaharias, and A.H. Mahan. Microcrystalline silicon for solar cells at high deposition rates by hot wire cvd. Mater. Res. Soc. Proc., 715:623, 2002. [156] A. Ledermann, U. Weber, C. Mukherjee, and B Schroeder. Influence of gas supply and filament geometry on the large-area deposition of amorphous silicon by hot-wire cvd. Thin Solid Films, 395:61, 2001. [157] S. Tange, K Inoue, K. Tonokura, and M. Koshi. Catalytic decomposition of sih 4 on a hot filament. Thin Solid Films, 395:42, 2001. [158] O. Kluth. Texturierte Zinkoxidschichten für Silizium-Dünnschichtsolarzellen. PhD thesis, Rheinisch-Westfählische Technische Hochschule Aachen, 2001. [159] O. Vetterl, R. Carius, L. Houben, C. Scholten, M. Luysberg, A. Lambertz, F. Finger, P. Hapke, and H. Wagner. Effects of structural properties of 131
BIBLIOGRAPHY µc-si:h absorber layers on solar cell performance. Mater. Res. Soc. Proc., 609:A15.2.1, 2000. [160] A.L.B. Neto, T. Dylla, S. Klein, T. Repmann, A. Lambertz, R. Carius, and F. Finger. Defects and structure of hydrogenated microcrystalline silicon films deposited by different techniques. J. Non-Cryst. Solids, 338-340:168, 2004. [161] F. Finger, S. Klein, T. Dylla, A.L. Baia Neto, O. Vetterl, and R. Carius. Defects in microcrystalline silicon prepared with hot wire cvd. Mater. Res. Soc. Proc., 715:123, 2002. [162] S. Klein, J. Wolff, F. Finger, R. Carius, H. Wagner, and M. Stutzmann. Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications. Jpn. J. Appl. Phys. Part II: Letters, 41:L10, 2002. [163] R.J. Koval, Chi Chen, G.M. Ferreira, A.S. Ferlauto, J.M. Pearce, P.I. Rovira, C.R. Wronski, and R.W. Collins. Maximization of the open circuit voltage for hydrogenated amorphous silicon n-i-p solar cells by incorporation of protocrystalline silicon p-type layers. Appl. Phys. Lett., 81(7):1258, 2002. [164] H. Overhof and P. Thomas. Electronic Transport in Hydrogenated Amorphous Silicon. Springer, New York, 1989. [165] Jiang-Huai Zhou, S. Yamasaki, J. Isoya, K. Ikuta, M. Kondo, A. Matsuda, and K. Tanaka. Pulsed esr study of the conduction electron spin center in µc-si:h. Mater. Res. Soc. Proc., 452:821, 1997. [166] F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur, and M. Gunes. Stability of microcrystalline silicon for thin film solar cell applications. IEE Proceedings-Circuits, Devices and Systems, 150(4):300, 2003. [167] M. Stutzmann. The defect density in amorphous silicon. Philos. Mag. B, 60(4):531, 1989. [168] D.H. Lee and J.D. Joannopoulos. Renormalization scheme for the transfermatrix method and the surfaces of wurtzite zno. Phys. Rev. B, 24(12):6899, 1981. [169] H. Eicker. Method and apparatus for determining the concentration of one gaseous component in a mixture of gases. U.S. patent 4012692, 1977. 132
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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Page 94 and 95: 6.3 On the Origin of Instability Ef
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Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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