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BIBLIOGRAPHY [121] J.R. Haynes and W. Shockley. The mobility and life of injected holes and electrons in germanium. Physical Review, 81(5):835, 1951. [122] R. Lawrance and A.F. Gibson. The measurement of drift mobility in semiconductors. Proc. Phys. Soc, 65B:994, 1952. [123] W.E. Spear. Transit time measurements of charge carriers in amorphous selenium films. Proc. Phys. Soc., 77:1157, 1957. [124] W.E. Spear. The hole mobility in selenium. Proc. Phys. Soc., 76:826, 1960. [125] W.E. Spear. Drift mobility techniques for the study of electrical transport properties in insulating solids. Journal of Non-crystalline Solids, 1(3):197, 1969. [126] W.E. Spear and H.L. Steemers. The interpretation of drift mobility experiments on amorphous silicon. Philosophical Magazine B, 47(5):L77, 1983. [127] M.A. Lampert and P. Mark. Current Injection in Solids. Academic Press, New York, 1970. [128] T. Tiedje, T.D. Moustakas, and J.M. Cebulka. Temperature dependence of the electron drift mobility in hydrogenated a-si prepared by sputtering. Journal de Physique Colloque, 42(C-4):155, 1981. [129] T. Tiedje, C.R. Wronski, B. Abeles, and J.M. Cebulka. Electron transport in hydrogenated amorphous silicon: drift mobility and junction capacitance. Solar Cells, 2(3):301, 1980. [130] W.E. Spear and H.L. Steemers. The reversal of drifting excess carriers in an amorphous silicon junction. Philosophical Magazine B, 47(6):L107, 1983. [131] Q. Wang, H. Antoniadis, E.A. Schiff, and S. Guha. Electron drift mobility measurements and conduction bandtails in hydrogenated amorphous silicon-germanium alloys. Physical Review B, 47(15):9435, 1993. [132] M.E. Scharfe. Transient photoconductivity in vitreous as 2 se 3 . Physical Review B, 2(12):5025, 1970. [133] D.M. Pai and M.E. Scharfe. Charge transport in films of amorphous arsenic triselenide. (dc dark current and transient photoconductivity studies). Journal of Non-Crystalline Solids, 8-10:752, 1972. [134] J.M. Marshall, R.A. Street, and M.J. Thompson. Electron drift mobility in amorphous si:h. Philos. Mag. B, 54(1):51, 1986. 129
BIBLIOGRAPHY [135] C.E. Nebel, H.C. Weller, and G.H Bauer. Extended state mobility and tail state distribution of a-si 1−x ge x :h alloys. Mater. Res. Soc. Proc., 118:507, 1988. [136] C.E. Nebel. Ladungsträgertransport und Rekombination in a-SiGe:H. PhD thesis, Universität Stuttgart, 1990. [137] N. Kopidakis, E.A. Schiff, N.-G. Park, J. Van De Lagemaat, and A.J. Frank. Ambipolar diffusion of photocarriers in electrolyte-filled, nanoporous tio 2 . J. Phys. Chem. B, 104(16):3930, 2000. [138] P.N. Rao, E.A. Schiff, L. Tsybeskov, and P. Fauchet. Photocarrier driftmobility measurements and electron localization in nanoporous silicon. Chemical Physics, 284(1-2):129, 2002. [139] D. Han, D.C. Melcher, E.A. Schiff, and M. Silver. Optical-bias effects in electron-drift measurements and defect relaxation in a-si:h. Physical Review B, 48(12):8658, 1993. [140] Q. Gu, Q. Wang, E.A. Schiff, Y.M. Li, and C.T. Malone. Hole drift mobility measurements in amorphous silicon carbon alloys. J. Appl. Phys., 76(4):2310, 1994. [141] P. Rao, E.A. Schiff, L. Tsybeskov, and P.M. Fauchet. Electron time-of-flight measurements in porous silicon. Mater. Res. Soc. Proc., 452:613, 1997. [142] S. Dinca, G. Ganguly, Z. Lu, E.A. Schiff, V. V. Vlahos, C.R. Wronski, and Q. Yuan. Hole drift-mobility measurements in contemporary amorphous silicon. Mater. Res. Soc. Proc., 762:345, 2003. [143] N. Wyrsch, M. Goerlitzer, N. Beck, J. Meier, and A. Shah. Transport properties of compensated µc-si:h. Mater. Res. Soc. Proc., 420:801, 1996. [144] A. Fejfar, N. Beck, H. Stuchlikova, N. Wyrsch, P. Torres, J. Meier, A. Shah, and J. Kocka. On the transport properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 227-230:1006, 1998. [145] B. Chapman. Glow Discharge Processes. John Wiley & Sons, 1980. [146] R.A. Haefer. Oberflächen- und Dünnschicht-Technologie Teil I, Beschichtungen von Oberflächen. Springer Verlag, Berlin, 1987. [147] H. Frey and G. Kienel. Dünnschichttechnologie. VDI-Verlag, 1987. 130
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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6.2 Irreversible Oxidation Effects
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Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
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Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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