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BIBLIOGRAPHY [93] J.W. Orton and M.J. Powell. The hall effect in polycrystalline and powdered semiconductors. Rep. Prog. Phys., 43(11):1263, 1980. [94] W.E. Spear, A.C. Hourd, and D.L. Melville. Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from sif 4 . Phil. Mag. B, 64(5):533, 1991. [95] G. Willeke. Physics and Electronic Properties of Microcrystalline Semiconductors. Artech House, London, 1992. [96] D. Ruff. Elektrischer Transport in mikrokristallinem Silizium. PhD thesis, Philipps-Universität Marburg, 1999. [97] T. Tiedje. Physics of hydrogenated amorphous silicon II. Electronic and vibrational properties, chapter Time-resolved charged transport in hydrogenated amorphous silicon, pages 261–300. Springer-Verlag, 1984. [98] F.W. Schmidlin. Theory of trap-controlled transient photoconduction. Phys. Rev. B, 16(6):2362, 1977. [99] H. Scher and E.W. Montroll. Anomalous transit-time dispersion in amorphous solids. Physical Review B, 12(6):2455, 1975. [100] J.M. Marshall. A trap-limited model for dispersive transport in semiconductors. Philos. Mag., 36(4):959, 1977. [101] M. Silver and L. Cohen. Monte carlo simulation of anomalous transit-time dispersion of amorphous solids. Phys. Rev. B, 15(6):3276, 1977. [102] J. Noolandi. Multiple-trapping model of anomalous transit-time dispersion in alpha-se. Phys. Rev. B, 16(10):4466, 1977. [103] J. Noolandi. Equivalence of multiple-trapping model and time-dependent random walk. Phys. Rev. B, 16(10):4474, 1977. [104] C.H. Henry and D.V. Lang. Nonradiative capture and recombination by multiphonon emission in gaas and gap. Phys. Rev. B, 15(2):989, 1977. [105] D.A. Long. Raman Spectroscopy. McGraw-Hill Interantional Book Company, 1977. [106] M. Cardona. Light Scattering in Solids. Springer, Berlin, 1982. [107] H. Richter. Elektronen und Phononen in mikrokristallinem Silizium. PhD thesis, Universität Stuttgart, 1983. 127
BIBLIOGRAPHY [108] P. Hapke. VHF-Plasmaabscheidung von mikrokristalinem Silizium (µc- Si): Einfluss der Plasmaanregungsfrequenz auf die strukturellen und elektrischen Eigenschaften. PhD thesis, Rheinisch-Westfälische Technische Hochschule Aachen, 1995. [109] L. Houben. Strukturelle Eigenschaften von mikrokristallinen Silizium im Übergangsbereich zwischen mikrokristallinem und amorphem Wachstum. Diploma thesis, Heinrich-Heine-Universität Düsseldorf, 1995. [110] H. Richter, Z.P. Wang, and L. Ley. The one phonon raman spectrum in microcrystalline silicon. Solid State Communications, 39:625, 1981. [111] R. Kobliska and S. Solin. Raman spectrum of wurzit silicon. Physical Review B, 8(8):3799, 1973. [112] R. Tsu, J. Gonzalez-Hernandez, S. Chao, S. Lee, and K. Tanaka. Critical volume fraction of crystallinity for conductivity percolation in phosphorusdoped si:f:h alloys. Applied Physics Letters, 40(534), 1982. [113] S. Vepřek, F. Sarrot, and Z. Iqbal. Effect of grain boundaries on the raman spectra, opical absorption and the elastic scattering in nanometersized crystalline silicon. Physical Review B, 36(6):3344, 1987. [114] C. Ossadnik, S. Veprek, and I. Gregora. Applicability of raman scattering for the characterization of nanocrystalline silicon. Thin Solid Films, 337:148, 1999. [115] L. Houben. Morphological and crystallographic defect properties of microcrystalline silicon: a comparison between different growth modes. Journal of Non-Crystalline Solids, 227-230:896, 1998. [116] R. Carius and S. Klein. unpublished results. [117] E. Zavoisky. Spin-magnetic resonance in paramagnetics. J. Phys. USSR, 9:211, 1945. [118] P.W. Atherton. Principles of electron spin resonance. Ellis Horword, PTR Prentice Hall, Chichester, 1993. [119] C.P. Poole. Electron Spin Resonance. Wiley-Intersience, New York, 1982. [120] J. Malten. Pulsed Electron Spin Resonance of Amorphous and Microcrystalline Semiconductors. Berichte des Forschungszentrum Jülichs 3273, ISSN 0944-2952, 1996. 128
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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6.2 Irreversible Oxidation Effects
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Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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