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BIBLIOGRAPHY [66] P.W. Anderson. Absence of diffusion in certain random lattices. Phys. Rev., 109:1492, 1958. [67] N.F. Mott. Electrons in disordered structures. Adv. Phys., 16(61):49, 1967. [68] N.F. Mott and E.A. Davis. Electronic Processes in Non-crystalline Materials. Oxford University Press, Oxford, 2nd edition, 1979. [69] J. Werner and M. Peisl. Exponential band tails in polycrystalline semiconductor films. Phys. Rev. B, 31(10):6881, 1985. [70] J. Werner and M. Peisl. Exponential band tails at silicon grain boundaries. Mater. Res. Soc, 46:575, 1985. [71] J. Werner. Band tailing in polycrystalline and disordered silicon, volume 35 of Procceedings of Physics, pages 345–351. Springer, Berlin, 1989. [72] K. Lips, P. Kanschat, S. Brehme, and W. Fuhs. Band tail states and free electrons in phosphorus doped microcrystalline silicon studied by esr. Thin Solid Films, 403-404:47, 2002. [73] S. Reynolds, V. Smirnov, C. Main, R. Carius, and F. Finger. Localised states in microcrystalline silicon photovoltaic structures studied by posttransit time-of-flight spectroscopy. Mater. Res. Soc. Proc., 762:327, 2003. [74] R. Carius, T. Merdzhanova, and F. Finger. Electronic properties of microcrystalline silicon investigated by photoluminescence spectroscopy on films and devices. Mater. Res. Soc. Proc., 762:321, 2003. [75] T.R. Merdzhanova. Microcrystalline Silicon Films and Solar Cells Investigated vy Photoluminescence Spectroscopy. PhD thesis, Bulgarian Academy of Science, Sofia, 2004. [76] T. Tiedje. Information about band tail states from time-of-flight experiments. Semiconductors and Semimetals, 21(Part C):207, 1984. [77] T. Dylla, E.A. Schiff, and F. Finger. Hole drift-mobility measurements and multiple-trapping in microcrystalline silicon. Mater. Res. Soc. Proc., 2004 in press. [78] B.I. Halperin and M. Lax. Impurity-band tails in the high-density limit. i. minimum counting methods. Phys. Rev., 148:722, 1966. [79] C.M. Soukoulis, M.H. Cohen, and E.N. Economou. Exponential band tails in random systems. Phys. Rev. Lett., 53:616, 1984. 125
BIBLIOGRAPHY [80] C.M. Soukoulis, M.H. Cohen, E.N. Economou, and A.D. Zdetsis. Electronic structure at band edges. Journal of Non-Crystalline Solids, 77-78:47, 1985. [81] E.N. Economou and N. Bacalis. Exponential tails in the density of states. Journal of Non-Crystalline Solids, 97-98:101, 1987. [82] E.N. Economou, C.M. Soukoulis, M.H. Cohen, and S. John. page 681. Plenum Press, New York, 1987. [83] R.A. Street and N.F. Mott. States in the gap in glassy semiconductors. Phys. Rev. Lett., 35(19):1293, 1975. [84] M.M. de Lima, P.C. Taylor, S. Morrison, A. LeGeune, and F.C. Marques. Esr observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon. Phys. Rev, B, 65(23):235324/1, 2002. [85] M. Stutzmann, M.S. Brandt, and M.W. Bayerl. Spin-dependent processes in amorphous and microcrystalline silicon: a survey. J. Non-Cryst. Solids, 266-269:1, 2000. [86] M. Stutzmann. Weak bond-dangling bond conversion in amorphous silicon. Philos. Mag. B, 56(1):63, 1987. [87] S. Klein, F. Finger, R. Carius, T. Dylla, B. Rech, M. Grimm, L. Houben, and M. Stutzmann. Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells. Thin Solid Films, 430(1-2):202, 2003. [88] M. Kondo, T. Nishimiya, K. Saito, and A. Matsuda. Light induced phenomena in microcrystalline silicon. J. Non-Cryst. Solids, 227-230(B):1031, 1998. [89] R.A. Street and D.K. Biegelsen. Distribution of recombination lifetimes in amorphous silicon. Solid State Communications, 44(4):501, 1982. [90] W.B. Jackson and N.M. Amer. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy. Physical Review B, 25(8):5559, 1982. [91] S.M. Sze. Physics of Semiconductor Devices. John Wiley & Sons, New York, 2nd edition, 1981. [92] G. Baccarani, B. Riccó, and G. Spadini. Transport properties of polycrystalline silicon films. Journal of Applied Physics, 49(11):5565, 1978. 126
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
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Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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