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BIBLIOGRAPHY [45] H. Overhof and M. Otto. Theoretical investigations of models for the electronic transport in microcrystalline silicon films. In J.M. Marshall, N. Kirov, A. Vavrek, and J.M. Maud, editors, Thin Film Materials and Devices - Developments in Science and Technology, page 23. World Scientific, Singapore, 1997. [46] R. Carius, J. Müller, F. Finger, N. Harder, and P. Hapke. Photo- and dark conductivity of µc-si:h thin films. In J.M. Marshall, N. Kirov, A. Vavrek, and J.M. Maud, editors, Thin Film Materials and Devices - Developments in Science and Technology, page 157. World Scientific, Singapore, 1999. [47] W. Fuhs, P. Kanschat, and K. Lips. Bandtails and defects in microcrystalline silicon (µc-si:h). Journal of Vacuum Science & Technology B, 18(3):1792–1795, 2000. [48] N. Harder. Elektrischer transport in dotierten und undotierten mikrokristallinen siliziumschichten. Master’s thesis, Universität Leipzig, 1998. [49] M. Serin, N. Harder, and R. Carius. Investigation of the transport properties of microcrystalline silicon by time-of-flight (tof). Journal of Material Science: Material in Electronics, 14(10-12):733, 2003. [50] M. Luysberg, P. Hapke, R. Carius, and F. Finger. Structure and growth of hydrogenated microcrystalline silicon: investigation by transmission electron microscopy and raman spectroscopy of films grown at different plasma excitation frequencies. Phil. Mag. A, 75:31, 1997. [51] F. Finger, R. Carius, P. Hapke, L. Houben, M. Luysberg, and M. Tzolov. Growth and structure of microcrystalline silicon prepared with glow discharge at various plasma excitation frequencies. Mat. Res. Soc. Symp. Proc., 452:725, 1997. [52] L. Houben. Plasmaabscheidung von mikrocrystallinem Silizium: Merkmale der Mikrostruktur und deren Deutung im Sinne von Wachstumsvorgängen. PhD thesis, Heinrich-Heine-Universität Düsseldorf, 1998. [53] T. Roschek. Microcrystalline Silicon Solar Cells prepared by 13.56 MHz PECVD. PhD thesis, Heinrich-Heine-Universität Düsseldorf, 2003. [54] R.W. Collins and B.Y. Yang. In situ ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline si growth. J. Vac. Sci. Technol. B, 7(5):1155, 1989. 123
BIBLIOGRAPHY [55] C.C. Tsai, G.B. Anderson, and R. Thompson. Low temperature growth of epitaxial and amorphous silicon in a hydrogen-diluted silane plasma. J. Non-Cryst. Solids, 137-138(2):673, 1991. [56] E. Vallat-Sauvain, U. Kroll, J. Meier, N. Wyrsch, and A. Shah. Microstructure and surface roughness of microcrystalline silicon prepared by very high frequency-glow discharge using hydrogen dilution. Journal of Non- Crystalline Solids, 266-269:125, 2000. [57] I. Sieber, N. Wanderka, Kaiser, I., and Fuhs. Electron microscopic characterization of microcrystalline silicon thin films deposited by ecr-cvd. Thin Solid Films, 403-404:543, 2002. [58] L. Houben, M. Luysberg, and R. Carius. Microtwinning in microcrystalline silicon and its effects on grain size measurements. Physical Review B, 67:045312, 2003. [59] W. Beyer and A. Ghazala. Absorption strengths of si-h vibrational modes in hydrogenated silicon. Mat. Res. Soc. Symp. Proc., 507:601, 1998. [60] W. Beyer. private communication, 2002. [61] P.M. Voyles, M.M.J. Treacy, H.C. Jin, J.R. Abelson, J.M. Gibson, J. Yang, S. Guha, and R.S. Crandall. Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. Mater. Res. Soc. Proc., 664:A2.4.1, 2001. [62] C. Longeaud, J.P. Kleider, P. Roca i Cabarrocas, S. Hamma, R. Meaudre, and M. Meaudre. Properties of a new a-si:h-like material: hydrogenated polymorphous silicon. Journal of Non-Crystalline Solids, 227-230(A):96, 1998. [63] R. Koval, Xinwei Niu, J. Pearce, Lihong Jiao, G. Ganguly, J. Yang, S. Guha, R.W. Collins, and C.R. Wronski. Kinetics of light induced changes in protocrystalline thin film materials and solar cells. Mater. Res. Soc. Proc., 609:A15.5.1, 2001. [64] H. Stiebig. Entwicklung und Beschreibung von optoelektronischen Bauelementen auf der Basis von amorphen Silizium. Berichte des Forschungszentrum Jülichs 3464, ISSN 0944-2952, 1997. [65] R.A. Street. Hydrogenated Amorphous Silicon. Cambridge University Press, Cambridge, 1991. 124
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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Page 86 and 87: 6.1 Metastable Effects in µc-Si:H
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Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
Page 108 and 109: 7.4 Multiple Trapping in Exponentia
Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
Page 159: Forschungszentrum Jülich in der He
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