Measurements
Electron Spin Resonance and Transient Photocurrent ... - JuSER
Electron Spin Resonance and Transient Photocurrent ... - JuSER
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BIBLIOGRAPHY<br />
[21] D. Will, C. Lerner, W. Fuhs, and K. Lips. Transport and recombination<br />
channels in undoped microcrystalline silicon studied by esr and edmr.<br />
Mater. Res. Soc. Proc., 467:361, 1997.<br />
[22] A. Mück, U. Zastrow, O. Vetterl, and B. Rech. SIMS Depth Profile Analysis<br />
of Oxygen Contermination in Hydrogenated Amorphous and Microcrystalline<br />
Silicon, page 689. Elsevier Science B.V., Amsterdam, 2000.<br />
[23] R. Brüggemann, A. Hierzenberger, H.N. Wanka, and M.B. Schubert. Electronic<br />
properties of hot-wire deposited nanocrystalline silicon. Mater. Res.<br />
Soc., 507:921, 1998.<br />
[24] M. Stutzmann and D. Biegelsen. The microscopic structure of defects in<br />
a-si:h and related materials. In Amoprhous Silicon and Related Materials,<br />
pages 557–594. World Scientific, Singapore, 1988.<br />
[25] M. Stutzmann. On the structure of dangling bond defects in silicon. Z.<br />
Phys. Chem. Neue Folge, 151(1-2):211, 1987.<br />
[26] S. Yamasaki, Jung-Kyu Lee, T. Umeda, J. Isoya, and K. Tanaka. Spatial<br />
distribution of phosphorus atoms surrounding spin centers of p-doped<br />
hydrogenated amorphous silicon elucidated by pulsed esr. J. Non-Cryst.<br />
Solids, 198-200(1):330–333, 1996.<br />
[27] S. Hasegawa, S. Narikawa, and Y. Kurata. Esr and electrical properties of<br />
p-doped microcrystalline si. Philos. Mag. B, 48(5):431–447, 1983.<br />
[28] S. Hasegawa, S. Narikawa, and Y. Kurata. Dependences of esr and electrical<br />
properties on p doping ratio for microcrystalline si. Physica B & C,<br />
117-118B+C(2):914–916, 1983.<br />
[29] F. Finger, C. Malten, P. Hapke, R. Carius, R. Fluckiger, and H. Wagner.<br />
Free electrons and defects in microcrystalline silicon studied by electron<br />
spin resonance. Philos. Mag. Lett, 70(4):247–254, 1994.<br />
[30] J. Müller. Electron Spin Resonance Studies on Microcrystalline Semiconductors.<br />
Berichte des Forschungszentrum Jülichs 3615, ISSN 0944-2952,<br />
1998.<br />
[31] M. Kondo, S. Yamasaki, and A. Matsuda. Microscopic structure of defects<br />
in microcrystalline silicon. J. Non-Cryst. Solid, 266-269:544, 2000.<br />
[32] K. Lips, P. Kanschat, and W. Fuhs. Defects and recombination in microcrystalline<br />
silicon. Solar Energy Materials and Solar Cells, 78:513, 2003.<br />
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