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Appendix C Abbreviations, Physical Constants and Symbols Abbreviations a-Si:H c-Si CE D + D 0 D − DB db 1 db 2 DOS ESR HWCVD IR µc-Si:H MT PECVD SWE TCO TEM TOF XRD Hydrogenated amorphous silicon Crystalline silicon Conduction electron Positively charged dangling bond defect Neutral dangling bond defect Negatively charged dangling bond defect Dangling Bond ESR line at g=2.0043 ESR line at g=2.0052 Density of states Electron spin resonance Hot-wire chemical vapor deposition Infrared spectroscopy Hydrogenated microcrystalline silicon Multiple trapping Plasma enhanced chemical vapor deposition Staebler-Wronski-Effect Transparent conductive oxide Transmission electron microscopy Time-of-flight X-ray diffraction 115
Chapter C: Abbreviations, Physical Constants and Symbols Symbols α Dispersion parameter A Contact area b Electrode spacing B 0 Flux density C Capacitance D Diffusion constant d Thickness d i Thickness of the i-layer d w Depletion layer width ∆E C Conduction band-tail width ∆E V Valence band-tail width ∆g g-tensor ∆H pp Peak to Peak line width η Energy conversion efficiency E Band gap E A Activation energy E B Barrier hight E 0 Energy of the groundstate E C Conduction band mobility edge E F Fermi level E G Energy band gap E Tr Energy of the transport path E V Valence band mobility edge ε Relative dielectic constant F Electric Field g Electronic g-value g 0 Electronic g-value of the free electron g(E) Density of states L Orbital angular moment I Current η Solar cell efficiency H Hamilton operator IC RS Raman intensity ratio J SC Short circuit current density l width of electrode L Displacement L D Debye screening length λ excitation wavelength µ 0 Band mobility 116
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
Page 78 and 79: 6.1 Metastable Effects in µc-Si:H
Page 88 and 89: 6.2 Irreversible Oxidation Effects
Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
Page 108 and 109: 7.4 Multiple Trapping in Exponentia
Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
Page 159: Forschungszentrum Jülich in der He
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