Measurements
Electron Spin Resonance and Transient Photocurrent ... - JuSER
Electron Spin Resonance and Transient Photocurrent ... - JuSER
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Appendix C<br />
Abbreviations, Physical Constants<br />
and Symbols<br />
Abbreviations<br />
a-Si:H<br />
c-Si<br />
CE<br />
D +<br />
D 0<br />
D −<br />
DB<br />
db 1<br />
db 2<br />
DOS<br />
ESR<br />
HWCVD<br />
IR<br />
µc-Si:H<br />
MT<br />
PECVD<br />
SWE<br />
TCO<br />
TEM<br />
TOF<br />
XRD<br />
Hydrogenated amorphous silicon<br />
Crystalline silicon<br />
Conduction electron<br />
Positively charged dangling bond defect<br />
Neutral dangling bond defect<br />
Negatively charged dangling bond defect<br />
Dangling Bond<br />
ESR line at g=2.0043<br />
ESR line at g=2.0052<br />
Density of states<br />
Electron spin resonance<br />
Hot-wire chemical vapor deposition<br />
Infrared spectroscopy<br />
Hydrogenated microcrystalline silicon<br />
Multiple trapping<br />
Plasma enhanced chemical vapor deposition<br />
Staebler-Wronski-Effect<br />
Transparent conductive oxide<br />
Transmission electron microscopy<br />
Time-of-flight<br />
X-ray diffraction<br />
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