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Table B.3: Parameters of n-type µc-Si:H prepared using VHF-PECVD. The process parameters were T S = 200 ◦ C, the pressure was p = 40 Pa and the plasma power density P = 0.07 W/cm 2 . Sample [SiH 4 ] m [mg] σ D [S/cm] IC RS (glass) IRS C (Al) 1 ppm N S 01B467 2.0 72.2 3.11×10 −05 0.81 0.82 2.36×10 +16 01B363 4.0 69.3 6.78×10 −04 0.71 0.77 4.12×10 +16 01B357 5.0 78.5 6.04×10 −04 0.66 0.7 5.17×10 +16 01B399 6.0 91.9 1.66×10 −04 0.33 0.45 4.24×10 +16 01B361 7.0 67.2 1.49×10 −10 0 0.03 6.87×10 +15 01B466 8.0 91.1 3.76×10 −10 0 0 4.44×10 +15 5 ppm 01B390 2.0 42.0 2.11×10 −04 0.83 0.84 4.71×10 +16 01B364 4.0 44.0 6.19×10 −03 0.78 0.78 1.69×10 +17 01B385 6.0 83.4 4.24×10 −04 0.12 0.4 1.38×10 +17 01B391 7.0 81.2 2.94×10 −08 0 0.05 2.56×10 +17 01B468 8.0 93.3 1.90×10 −08 0 0 7.74×10 +15 10 ppm 01B415 2.0 79.0 2.87×10 −03 0.82 0.83 1.20×10 +17 01B402 4.0 60.0 2.06×10 −02 0.74 0.76 2.52×10 +17 01B410 6.0 83.0 1.12×10 −02 0.38 0.51 2.72×10 +17 01B413 7.0 109.0 1.45×10 −06 0 0.08 1.33×10 +17 01B472 8.0 87.7 1.72×10 −07 0 0 8.71×10 +15 113
Chapter B: List of Samples Table B.4: Parameters of intrinsic µc-Si:H prepared using a PECVD process. The process parameters were T S = 200 ◦ C, the pressure was p = 300 mTorr, and the was plasma power density P = 0.07 W/cm 2 . Sample [SiH 4 ] m [mg] σ D [S/cm] IC RS N S g-value VHF 00B501 2.0 75.0 5.09×10 −06 0.78 7.20×10 +16 2.0046 00B493 3.0 70.0 3.47×10 −06 0.68 2.50×10 +16 2.0044 00B489 4.0 80.0 1.34×10 −06 0.61 2.15×10 +16 2.0044 00B483 5.0 58.0 2.40×10 −06 0.53 2.00×10 +16 2.0044 00B487 6.0 80.0 6.81×10 −08 0.43 1.30×10 +16 2.0046 01B098 6.0 104.0 0.39 8.50×10 +15 2.0046 01B103 7.0 88.0 0.16 2.80×10 +15 2.0047 00B497 7.0 91.0 1.50×10 −10 0 2.66×10 +15 2.0047 00B509 8.0 81.0 2.45×10 −11 0 3.20×10 +15 2.0048 01B096 9.0 123.7 0 3.60×10 +15 2.0050 00B512 9.0 93.0 2.00×10 −11 0 2.00×10 +15 2.0047 03B274 20.0 67.4 0 3.80×10 +15 2.0053 03B275 30.0 92.9 0 5.00×10 +15 2.0054 01B163 50.0 158.0 0 7.00×10 +15 2.0054 03B277 100.0 65.5 0 9.50×10 +15 2.0054 114
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
Page 76 and 77: Chapter 6 Reversible and Irreversib
Page 78 and 79: 6.1 Metastable Effects in µc-Si:H
Page 88 and 89: 6.2 Irreversible Oxidation Effects
Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
Page 108 and 109: 7.4 Multiple Trapping in Exponentia
Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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