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Appendix B List of Samples Table B.1: Parameters of intrinsic µc-Si:H prepared using a HWCVD process. The filament temperature was T F = 1650 ◦ C, while the deposition pressure was p = 3.5 Pa, except for samples 02C261-02C297 with p = 5Pa. Sample [SiH 4 ] m [mg] σ D [S/cm] IC RS N S g-value 185 ◦ C 01c297 5.0 34.8 5.21×10 −08 0.6 4.70×10 +15 2.0046 01c298 5.7 35.8 4.40×10 −09 0.51 5.10×10 +15 2.0046 01c299 5.7 37.5 5.38×10 −07 0.4 4.30×10 +15 2.0045 02C261 5.0 54.6 0.63 1.67×10 +16 2.0047 02C260 6.3 63.3 7.57×10 +15 2.0048 02C287 5.5 31.1 0.58 7.01×10 +15 2.0043 02C288 4.7 16.4 0.67 9.79×10 +15 2.0048 02C292 6.0 15.7 0 1.66×10 +16 2.0047 02C291 7.0 20.7 0.23 8.29×10 +15 2.0048 02C297 9.0 13.9 0 1.03×10 +16 2.0049 250 ◦ C 02c128 3.0 34.8 0.74 8.82×10 +16 2.0047 02c117 4.0 45.5 0.7 3.18×10 +16 2.0049 02c125 5.0 41.3 0.63 1.98×10 +16 2.0049 02c113 6.0 41.5 0.59 7.76×10 +15 2.0046 02c121 7.0 56.3 0.5 8.87×10 +15 2.0047 02c134 9.0 46.3 0 1.17×10 +16 2.0052 111
Chapter B: List of Samples Table B.2: Parameters of intrinsic µc-Si:H prepared using a HWCVD process. The filament temperature was T F = 1750 ◦ C for samples prepared at T S = 450 ◦ C and T F = 1650 ◦ C for the other. The pressure was p = 5Pa. Sample [SiH 4 ] m [mg] σ D [S/cm] IC RS N S g-value 285 ◦ C 01c050 3.0 23.0 1.38×10 −06 0.77 2.13×10 +17 2.0480 01c045 5.0 24.0 2.42×10 −06 0.65 1.36×10 +16 2.0050 01c052 6.3 22.1 1.12×10 −05 0.54 8.67×10 +15 2.0048 01c047 7.5 15.3 1.03×10 −06 0.4 2.28×10 +16 2.0052 01c051 8.8 15.0 6.69×10 −07 0.29 1.46×10 +16 2.0051 01c048 10.0 14.1 1.05×10 −10 0 4.84×10 +16 2.0050 01c074 10.0 29.3 0.1 1.42×10 +16 2.0049 01c077 11.3 24.8 0 1.18×10 +16 2.0050 01c075 12.5 28.9 0 1.23×10 +16 2.0049 330 ◦ C 01c067 5.0 31.6 2.74×10 −07 2.60×10 +17 2.0050 01c073 5.0 35.6 2.74×10 −07 0.63 2.84×10 +17 2.0050 01c064 7.5 25.6 1.15×10 −05 0.58 1.29×10 +17 2.0053 01c066 10.0 28.1 1.13×10 −06 0.42 7.70×10 +16 2.0053 01c072 11.3 27.1 5.13×10 −08 0.31 3.08×10 +16 2.0051 01c068 12.5 29.5 9.38×10 −12 0.15 4.37×10 +16 2.0053 01c065 15.0 17.9 1.95×10 −11 0 1.40×10 +17 2.0038 01c070 19.0 19.5 0 8.30×10 +16 2.0051 450 ◦ C 00C247 5.0 2.38×10 −07 0.76 4.80×10 +18 2.0050 00C235 7.5 6.94×10 −07 0.66 1.70×10 +18 2.0048 00C264 10.0 5.01×10 −07 0.75 4.30×10 +18 2.0056 00C241 12.5 3.30×10 −07 0.69 1.00×10 +18 2.0053 00C258 15.6 3.05×10 −07 0.74 8.10×10 +17 2.0050 00C266 15.6 2.46×10 −08 0.48 1.30×10 +18 00C242 18.8 7.64×10 −08 0.58 5.20×10 +17 2.0050 00C256 21.9 1.59×10 −08 0.55 1.00×10 +18 2.0053 00C261 25.0 7.09×10 −11 0.1 9.00×10 +16 2.0057 112
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
Page 74 and 75: 5.7 Summary Figure 5.7: Schematic b
Page 76 and 77: Chapter 6 Reversible and Irreversib
Page 78 and 79: 6.1 Metastable Effects in µc-Si:H
Page 88 and 89: 6.2 Irreversible Oxidation Effects
Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
Page 108 and 109: 7.4 Multiple Trapping in Exponentia
Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
Page 159: Forschungszentrum Jülich in der He
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