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CONTENTS C Abbreviations, Physical Constants and Symbols 115 Bibliography 119 Publications 135 Acknowledgments 137 ix
x CONTENTS
Page 1 and 2: Forschungszentrum Jülich in der He
Page 4 and 5: Forschungszentrum Jülich GmbH Inst
Page 6 and 7: Kurzfassung In der vorliegenden Arb
Page 8 and 9: Abstract The electronic properties
Page 10 and 11: Contents 1 Introduction 1 2 Fundame
Page 14 and 15: Chapter 1 Introduction Solar cells
Page 16 and 17: defect states provided that they ar
Page 18 and 19: Chapter 8: In this chapter, the inf
Page 20 and 21: Chapter 2 Fundamentals In this firs
Page 22 and 23: 2.2 Electronic Density of States St
Page 24 and 25: 2.2 Electronic Density of States ta
Page 26 and 27: 2.2 Electronic Density of States Fi
Page 28 and 29: 2.3 Charge Carrier Transport influe
Page 30 and 31: 2.3 Charge Carrier Transport functi
Page 32 and 33: Chapter 3 Sample Preparation and Ch
Page 34 and 35: 3.1 Characterization Methods Figure
Page 36 and 37: 3.1 Characterization Methods Homoge
Page 38 and 39: 3.1 Characterization Methods µ Fig
Page 40 and 41: 3.1 Characterization Methods compar
Page 42 and 43: 3.1 Characterization Methods bution
Page 44 and 45: 3.1 Characterization Methods posite
Page 46 and 47: 3.2 Deposition Technique admixture
Page 48 and 49: 3.3 Sample Preparation 3.3.1 Sample
Page 50 and 51: 3.3 Sample Preparation reverse bias
Page 52 and 53: Chapter 4 Intrinsic Microcrystallin
Page 54 and 55: 4.2 Electrical Conductivity Figure
Page 56 and 57: 4.3 ESR Signals and Paramagnetic St
Page 58 and 59: 4.3 ESR Signals and Paramagnetic St
Page 60 and 61: 4.4 Discussion - Relation between E
Page 62 and 63:
4.4 Discussion - Relation between E
Page 64 and 65:
Chapter 5 N-Type Doped µc-Si:H In
Page 66 and 67:
5.2 Electrical Conductivity Figure
Page 68 and 69:
5.4 Dangling Bond Density Figure 5.
Page 70 and 71:
5.5 Conduction Band-Tail States Fig
Page 72 and 73:
5.6 Discussion concentration evalua
Page 74 and 75:
5.7 Summary Figure 5.7: Schematic b
Page 76 and 77:
Chapter 6 Reversible and Irreversib
Page 78 and 79:
6.1 Metastable Effects in µc-Si:H
Page 80 and 81:
Page 82 and 83:
Page 84 and 85:
Page 86 and 87:
Page 88 and 89:
6.2 Irreversible Oxidation Effects
Page 90 and 91:
Page 92 and 93:
Page 94 and 95:
6.3 On the Origin of Instability Ef
Page 96 and 97:
6.3 On the Origin of Instability Ef
Page 98 and 99:
Chapter 7 Transient Photocurrent Me
Page 100 and 101:
7.2 Transient Photocurrent Measurem
Page 102 and 103:
Page 104 and 105:
Page 106 and 107:
7.3 Temperature Dependent Drift Mob
Page 108 and 109:
7.4 Multiple Trapping in Exponentia
Page 110 and 111:
7.5 Discussion Table 7.2: Multiple
Page 112 and 113:
7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115:
Chapter 8 Schematic Density of Stat
Page 116 and 117:
silicon as shown in Fig. 8.1 b, whi
Page 118 and 119:
Chapter 9 Summary In the present wo
Page 120 and 121:
Appendix A Algebraic Description of
Page 122 and 123:
Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125:
Appendix B List of Samples Table B.
Page 126 and 127:
Table B.3: Parameters of n-type µc
Page 128 and 129:
Appendix C Abbreviations, Physical
Page 130 and 131:
µ d Drift mobility µ d,h Hole dri
Page 132 and 133:
Bibliography [1] E. Becquerel. Mém
Page 134 and 135:
BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137:
BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139:
BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141:
BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143:
BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145:
BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147:
BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149:
List of Publications 1. T. Dylla, R
Page 150 and 151:
Acknowledgments At this point, I wa
Page 152 and 153:
Schriften des Forschungszentrums J
Page 154 and 155:
Page 156 and 157:
Page 159:
Forschungszentrum Jülich in der He
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