Measurements

Chapter 7: Transient Photocurrent Measurements
a semiconductor device with a band gap of E G = 1.1 eV. Considering the internal
electric field, the normalized currents shown in Fig. 7.5 establish an ”envelope”
curve, indicating that, for a given time, the drift of holes depends linearly on electric
field.
7.5.2 Hole Drift Mobilities
The drift mobilities have been evaluated using Eq. 3.9. At room temperature hole
drift mobilities of µ d,h ≈ 1cm 2 /Vs are obtained from these results. Additionally,
temperature dependent photocurrent transients have been recorded in a range
between 100K and 300K. The average drift mobility was evaluated at a particular
”displacement/field” ratio of L/F = 7 × 10 −8 cm 2 /V. The hole drift mobilities
derived are much larger than that of a-Si:H, where typical values are about two
orders of magnitude smaller [142]. However, a direct experimental comparison at
the same value for L/F is not possible, because the transit times t τ in amorphous
silicon expected for this L/F value would by far exceed the deep trapping life time
τ d . Thus, holes would already be captured by deep traps without any chance of
release before they can reach the collecting electrode. Plotting µ d,h in an Arrhenius
plot shows that the hole drift mobility is simply activated with an activation
energy of E A = 0.13 eV. The physical meaning of E A for multiple trapping in an
exponential distribution of traps is still unclear. It has been suggested that E A corresponds
to an average energy required for a charge carrier trapped to release it
above the mobility edge [100], but does not describe any particular feature, like a
band-tail width or the depth of any particular trap.
Although electron and hole transport are crucial properties of these films, there
are only few conclusive data regarding the drift mobilities of these carriers in µc-
Si:H, and even less understanding of the physics governing carrier drift. The main
experimental problem has been the high dark conductivity of many of the microcrystalline
materials, which militates against conventional photocarrier time-offlight
estimation of drift mobilities. Mobility estimates have been reported using
time-of-flight on specially compensated samples [143] and also using a novel
”photo-CELIV” approach [179]. The results presented here differ qualitatively
from these works performed on different samples of µc-Si:H, which found only a
weak temperature-dependence [143, 179] and a strong electric-field dependence
of the hole drift mobility [179]. The previous work differs from this both in samples
measured and methods applied. However, recent work also performed on
one sample prepared under conditions for optimized solar cells agrees in both the
magnitude of the hole drift mobility and activation energy of µ d,h [49].
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