Thermoelectric Materials
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<strong>Thermoelectric</strong> <strong>Materials</strong><br />
Dan Lorenc<br />
Katrina Ellison<br />
March 12, 2009<br />
1
Moral of the Story<br />
• Biggest challenges for<br />
us:<br />
• Packaging<br />
• Integration<br />
• Bulk manufacturing<br />
http://www.thermoelectric.com/2005/images/te-1.jpg<br />
© Dan Lorenc and Katrina Ellison 2009<br />
3<br />
Slide
Physical Overview<br />
TH<br />
Current<br />
flow<br />
V+<br />
<strong>Thermoelectric</strong><br />
Material<br />
V-<br />
Tc<br />
Power output<br />
© Dan Lorenc and Katrina Ellison 2009<br />
Slide 4
History<br />
• 1821: Seebeck effect<br />
• 1834: Peltier effect<br />
• 1854: Thomson effect<br />
• 1910: Figure of merit<br />
• 1950: First space<br />
application<br />
First Thermopile<br />
circa 1840<br />
http://www.dself.dsl.pipex.com/MUSEUM/POWER/thermoelectric/<br />
thermoelectric.htm<br />
© Dan Lorenc and Katrina Ellison 2009<br />
5<br />
Slide
Applications<br />
• Cooling<br />
www.micropelt.com<br />
• Power generation<br />
• Space<br />
• Waste heat<br />
Radioisotope <strong>Thermoelectric</strong> Generator (RTG)<br />
Used on Voyager 1 & 2<br />
http://thermoelectrics.caltech.edu/history_page.htm<br />
www.nextbigfuture.com<br />
© Dan Lorenc and Katrina Ellison 2009 Slide 6
Strengths and Weaknesses<br />
Strengths<br />
High reliability<br />
Lightweight<br />
Quiet<br />
High scalability<br />
Weaknesses<br />
Low efficiency<br />
Expensive<br />
Exotic materials<br />
Difficult to manufacture<br />
© Dan Lorenc and Katrina Ellison 2009<br />
7<br />
Slide
Typical Specs<br />
Custom<br />
<strong>Thermoelectric</strong><br />
Nextreme<br />
Lincoln Lab<br />
Thot 260° C ~ 210° C 327° C<br />
Tcold 50° C ~ 90° C 107° C<br />
ΔT 210° C 120° C 220° C<br />
Imatched load 1.43 A 0.875 A -<br />
Vmatched load 4.33 V 0.28 V -<br />
Powermatched load 6.19 W 0.240 W -<br />
Size 1600 mm 2 5.12* mm 2 120 mm 2<br />
Power Density 0.39 W/cm 2 4.69 W/cm 2 18 W/cm 2<br />
Weight 25 g - 19 g (w/ combustor)<br />
Output Resistance 3.0 Ω 0.336 Ω -<br />
Cost $52.88 $75 -<br />
Watts per Dollar 0.12 0.0032 -<br />
* TE material size. Actual module size: 12.75 mm<br />
© Dan Lorenc and Katrina Ellison 2009<br />
8<br />
Slide
Practical Considerations: Thermal Contact<br />
http://www.customthermoelectric.com/app_notes/app_note_TEG%20Install.pdf<br />
• Module surface must be as smooth as possible<br />
for good thermal contact<br />
• Thermal Interface Material (TIM) needed<br />
between module and heat sink<br />
© Dan Lorenc and Katrina Ellison 2009<br />
9<br />
Slide
Practical Considerations: Clamping Force<br />
http://www.customthermoelectric.com/app_notes/app_note_TEG%20Install.pdf<br />
• Clamping force must be applied evenly<br />
• Typical clamping pressure ~ 1275 kPa<br />
© Dan Lorenc and Katrina Ellison 2009<br />
10<br />
Slide
Form, F’ysics and Flows<br />
http://www.wikipedia.com<br />
© Dan Lorenc and Katrina Ellison 2009<br />
11<br />
Slide
Physics<br />
V = (S B<br />
− S A<br />
)(T 2<br />
− T 1<br />
)<br />
• Seebeck Effect<br />
• Peltier Effect<br />
• Thomson Effect<br />
dQ<br />
dt<br />
= Π AB<br />
I = (Π B<br />
− Π A<br />
)I<br />
q = ρJ 2 − µJ dT<br />
dx<br />
© Dan Lorenc and Katrina Ellison 2009<br />
12<br />
Slide
Physics<br />
• Thomson relations show<br />
these are all one effect<br />
Peltier Coefficient<br />
Thomson Coefficient<br />
∏ = S ⋅ T<br />
µ = T dS<br />
dT<br />
Seebeck Coefficient<br />
William Thomson (Lord Kelvin)<br />
www.abdn.ac.uk<br />
© Dan Lorenc and Katrina Ellison 2009<br />
13<br />
Slide
ZT Number<br />
Electrical Conductivity<br />
ZT = σS2<br />
λ<br />
Thermal Conductivity<br />
T<br />
• Dimensionless figure<br />
of merit<br />
• Linked to<br />
thermodynamic<br />
efficiency<br />
• Z is often used as<br />
well - simply drop T<br />
from each side<br />
© Dan Lorenc and Katrina Ellison 2009<br />
14<br />
Slide
Z vs. Efficiency<br />
<strong>Thermoelectric</strong>s Handbook: Macro to Nano p. 1-5<br />
© Dan Lorenc and Katrina Ellison 2009<br />
15<br />
Slide
Z of Practical <strong>Materials</strong><br />
Z (K^-1*10^3)<br />
4<br />
3<br />
2<br />
Sb-BiTe-Se<br />
Bi2Te3-75Sb2 Te3<br />
(n-type)<br />
4N-PbTe<br />
Bi2Te3-75Sb2 Te3<br />
(p-type)<br />
3N-PbTe<br />
ZT=1<br />
• Z has no fundamental<br />
limit<br />
• Theoretical max with<br />
current materials ~ 4<br />
• Best commercially<br />
available ~ 1<br />
1<br />
SiGe n-type<br />
SiGe p-type<br />
• Best synthesized in lab<br />
~ 2<br />
0<br />
-200 0 200 400 600 800<br />
Temperature (K)<br />
<strong>Thermoelectric</strong>s Handbook: Macro to Nano p. 1-9<br />
• Lincoln Lab material is<br />
PbTe<br />
© Dan Lorenc and Katrina Ellison 2009<br />
16<br />
Slide
Current Research: Nanostructuring<br />
Growth<br />
Direction<br />
Material 1<br />
Material 2<br />
Material 1<br />
Material 2<br />
Material 1<br />
Substrate<br />
• Allows creation of new<br />
lattice structures<br />
(“superlattices”) which<br />
reduce thermal<br />
conductivity<br />
ZT = σS2<br />
λ<br />
T<br />
• Utilizes thin-film<br />
manufacturing methods<br />
• Technique Lincoln Lab is<br />
using<br />
© Dan Lorenc and Katrina Ellison 2009<br />
17<br />
Slide
Current Research: Low-Dimensional <strong>Materials</strong><br />
• At least one dimension<br />
no wider than lattice<br />
constant<br />
• Most promising for<br />
large increases in ZT (up<br />
to ZT=4)<br />
http://en.wikipedia.org/wiki/File:UnitCell.png<br />
© Dan Lorenc and Katrina Ellison 2009<br />
18<br />
Slide
Current Decreasing Research: Thermal PGEC Conductivity <strong>Materials</strong><br />
PGEC = “Phonon-Glass, Electron-<br />
Crystal”<br />
• High electrical conductivity<br />
• Low thermal conductivity<br />
Created by adding a loose “rattler”<br />
atom within the crystal structure<br />
http://www.nature.com/nmat/journal/v7/n10/thumbs/nmat2271-f1.jpg<br />
© Dan Lorenc and Katrina Ellison 2009<br />
19<br />
Slide
Manufacturing: Czochralski Method<br />
Molten material<br />
Formed Crystal<br />
© Dan Lorenc and Katrina Ellison 2009<br />
20<br />
Slide
Manufacturing: Zone Melting<br />
Impurities<br />
Molten Region<br />
Heating Elements<br />
Purified Crystal<br />
© Dan Lorenc and Katrina Ellison 2009<br />
21<br />
Slide
Manufacturing: Pressing<br />
Plunger<br />
Heaters<br />
Die<br />
<strong>Thermoelectric</strong> material<br />
© Dan Lorenc and Katrina Ellison 2009<br />
22<br />
Slide
Advanced Manufacturing Techniques<br />
<strong>Thermoelectric</strong>s Handbook<br />
• Contamination a problem<br />
• Electron-beam evaporation<br />
• Layered cutting into modules<br />
• Micromilling?<br />
www.micropelt.com<br />
© Dan Lorenc and Katrina Ellison 2009<br />
23<br />
Slide
Manufacturing: Sputter Deposition<br />
• Widely used for<br />
semiconductor<br />
applications, tool bit<br />
coating, etc.<br />
http://upload.wikimedia.org/wikipedia/en/7/72/Sputtering.gif<br />
• Utilized by companies<br />
marketing thin-film<br />
thermoelectrics<br />
© Dan Lorenc and Katrina Ellison 2009<br />
24<br />
Slide
Manufacturing: Epitaxy<br />
• Growth of<br />
monocrystalline thin-film<br />
material on substrate<br />
• Highest quality thin-film<br />
technique<br />
http://www.bel-india.com/BELWebsite/images/epitaxy1.jpg<br />
© Dan Lorenc and Katrina Ellison 2009<br />
25<br />
Slide
Manufacturing: Comparison<br />
Method Pros Cons<br />
Czochralski<br />
Zone Melting<br />
Pressing<br />
-Highest Quality<br />
standard technique<br />
-Well understood<br />
-Cheaper<br />
-Impurities OK<br />
-Cheapest<br />
-Exact Dimensions<br />
-Resistant to Shocks<br />
-Expensive<br />
-Post machining<br />
-Brittle<br />
-Post machining<br />
-Brittle<br />
-Lowest Quality<br />
Sputter<br />
Deposition<br />
Epitaxy<br />
- Versatile<br />
- Well-characterized<br />
- Precise<br />
- Highest Quality Thin<br />
Film Technique<br />
-<br />
- Expensive<br />
- Expensive<br />
© Dan Lorenc and Katrina Ellison 2009<br />
26<br />
Slide
References<br />
<strong>Thermoelectric</strong>s Handbook: Macro to Nano. CRC Press, 2006.<br />
Rowe, D.M. “General Principles and Basic Considerations”. pp. 1-2 : 1-14.<br />
Goldsmid, H.J. “A New Upper Limit to the <strong>Thermoelectric</strong> Figure-of-Merit”. pp. 10-1 : 10-10.<br />
Nurnus, J., H. Böttner, and A. Lambrecht. “Nanoscale <strong>Thermoelectric</strong>s”. pp. 48-1 : 48-23.<br />
Min, Gao. “<strong>Thermoelectric</strong> Module Design Theories”. pp-11-1:11-14.<br />
Cook, B.A. Harringa J.L. “Solid State Synthesis of <strong>Thermoelectric</strong> <strong>Materials</strong>”. pp. 19-1 : 19-14.<br />
© Dan Lorenc and Katrina Ellison 2009<br />
27<br />
Slide
Reading List<br />
Chapter 1: <strong>Thermoelectric</strong>s Handbook<br />
Rowe, D.M. “General Principles and Basic Considerations”. pp. 1-2 : 1-14.<br />
Will be posted/emailed shortly.<br />
© Dan Lorenc and Katrina Ellison 2009<br />
28<br />
Slide
Solid-State Approaches<br />
• <strong>Thermoelectric</strong> (TE) and thermal photovoltaic (TPV)<br />
– Spacecraft power<br />
– Navy development<br />
– TE used for larger generators<br />
Heatsink<br />
– Limited micropower efforts Coolant air<br />
Fan<br />
in<br />
Teledyne TE Generator<br />
CERDEC Sponsor<br />
HC fuel in<br />
Voltage:<br />
Power:<br />
24V to 36V<br />
adjustable<br />
120 W<br />
Efficiency: ~3%<br />
Weight: 16.4 kg<br />
w/o fuel<br />
Fuel: Diesel, JP8<br />
Era: 1988<br />
Exhaust out<br />
Combustor<br />
Converter<br />
modules<br />
Electric<br />
power out<br />
• Share common conversion architecture<br />
– Air-breathing combustor at Th w/ optional recuperator<br />
– Converter<br />
– Heatsink to maintain Tc<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
TPV and TE Thermal Conversion<br />
• Thermal photovoltaic is a straightforward extension of traditional solar<br />
PV using photoelectric effect<br />
– Thermal source couples photons to semiconductor diode junction which<br />
has a quantum energy level structure<br />
– Photon energy greater than semiconductor bandgap is absorbed to create<br />
an electron-hole-pair<br />
– For TPV, the thermal source is local, typically heated by combustion<br />
processes<br />
– Characteristic temperatures are lower than solar, so lower bandgap<br />
devices are needed<br />
• <strong>Thermoelectric</strong> effect also related to energy absorption of charge<br />
carriers in solids<br />
– Thermal and electrical conduction in non-insulating solids are<br />
manifestations of the same transport phenomena<br />
– Charge carriers act as working fluid with “specific heat”<br />
– Charge carrier thermal energy diffusion confined by voltage just as gas<br />
thermal energy diffusion confined by pressure<br />
– Carrier sign provides opportunity for negative voltage<br />
– Solid lattice introduces challenging but potentially beneficial added<br />
complexity<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
In Practice<br />
TPV Application<br />
+<br />
Potential<br />
Heat In<br />
(HC combustion)<br />
P-type<br />
N-type<br />
Heat Out<br />
Load<br />
hν > E bg<br />
Emitter<br />
T ~ 1000K<br />
-<br />
V(I,Th,Tl)<br />
Photodiode<br />
Qh(I,Th,Tl)<br />
Thomson Relations<br />
TE Application<br />
+<br />
Temperature<br />
Potential<br />
Heat In<br />
(HC combustion)<br />
P-type<br />
N-type<br />
Heat Out<br />
Load<br />
T ~ 700K<br />
-<br />
V(I,Th,Tl)<br />
TE couple<br />
Qh(I,Th,Tl)<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
In Practice<br />
volumetric heat<br />
generation<br />
TPV Application<br />
Material Heat Inelectrical<br />
(HC combustion)<br />
conductivity<br />
Thomson<br />
heat<br />
current<br />
density<br />
+<br />
1d spatial<br />
temperature<br />
gradient<br />
P-type<br />
N-type<br />
Potential<br />
Heat Out<br />
Load<br />
hν > E bg<br />
Emitter<br />
material Seebeck coefficient (ΔV/<br />
ΔT)<br />
T ~ 1000K<br />
-<br />
Photodiode<br />
V(I,Th,Tl)<br />
Qh(I,Th,Tl)<br />
Thomson Relations<br />
Relative Peltier heat<br />
(energy / charge)<br />
TE Application<br />
+<br />
Potential Color<br />
Temperature<br />
Heat In<br />
(HC combustion)<br />
N-type P-type<br />
P-type N-type<br />
Heat Out<br />
Load<br />
T ~ 700K<br />
-<br />
TE couple<br />
V(I,Th,Tl)<br />
Qh(I,Th,Tl)<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Campus - Lincoln TPV ACC Effort<br />
• Joint research program to<br />
demonstrate micro size TPV<br />
– Blackbody radiation matched PV<br />
cells on both sides<br />
– Antireflective coatings and<br />
spectral filters<br />
– Matched PV cell and combustor<br />
dimensions<br />
– Thermal management for high<br />
temperature operation<br />
– Modular fabrication<br />
• Substantial progress<br />
demonstrated<br />
Top PV cell<br />
and filter<br />
Spacer<br />
Burner<br />
Spacer<br />
Bottom filter<br />
and PV Cell<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Packaged 20W Portable Generator<br />
Featuring Lincoln NDSL TE Material<br />
3 in<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Overview of <strong>Thermoelectric</strong>s<br />
• <strong>Thermoelectric</strong> materials provide solid-state, direct conversion<br />
between thermal and electrical energy<br />
– Obtain electrical power from heat (NASA RTGs)<br />
– Solid-state cooling (TE coolers for lasers, car seats, mini fridges)<br />
• Advantages: small size, no moving parts, quiet, no pollutants<br />
The key figure of merit is ZT (unitless)<br />
Seebeck<br />
Coefficient<br />
(=ΔV/ΔT)<br />
Electrical conductivity<br />
Temperature<br />
Device Conversion Efficiency<br />
T c =300 K<br />
ZT = 5<br />
ZT = 3<br />
ZT = 2<br />
ZT = 1<br />
ZT = 0.5<br />
Lattice and electronic<br />
thermal conductivity<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Optimization of ZT<br />
Parameter values (arb. units)<br />
S<br />
ZT<br />
σ<br />
• Best TE materials today have ZT~1 at<br />
300 K, rising to ~1.5-2 at 600-1000 K<br />
• Difficulty of increasing ZT due to<br />
interplay between S, σ, and κ e<br />
– As carrier concentration increases, S<br />
decreases while σ and κ e increase<br />
– Maximum ZT typically at ~1x10 18 to 1x10 20<br />
cm -3 depending on material<br />
• Two approaches to increase ZT<br />
– Decrease κ L (phonon conductivity) through<br />
nanostructuring 1-4<br />
– Increase power factor (=S 2 σ) through<br />
electron filtering 5 or quantum confinement 6<br />
κ e<br />
1<br />
T.C. Harman et al., Science 297, 2229 (2002).<br />
2<br />
R. Venkatasubramanian et al., Nature 413, 597 (2001).<br />
3<br />
W. Kim et al., Phys. Rev. Lett. 96, 045901 (2006).<br />
4<br />
K.F. Hsu et al., Science 303, 818 (2004).<br />
5<br />
D. Vashaee and A. Shakouri, J. Appl. Phys. 95, 1233 (2004).<br />
6<br />
L.D. Hicks and M.S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Intrinsic ZT for Various <strong>Materials</strong><br />
• Lincoln performed<br />
pioneering work to<br />
demonstrate ZT<br />
enhancement<br />
– MBE grown<br />
spontaneous<br />
nanostructure<br />
– nano dot superlattice<br />
(NDSL)<br />
• Work continues in a<br />
number of material<br />
systems<br />
– Lincoln NDSL among<br />
the best<br />
– Inconsistent<br />
measurement results<br />
[1] T.M. Tritt et al., MRS Bulletin 31, 188 (2006). [2] B. Poudel et al., Science 320, 634 (2008). [3] H. Bottner et al., MRS Bulletin 31, 211 (2006).<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Power Generation:<br />
100-µm-Thick n-NDSL<br />
10 W/cm 2<br />
= -235 µV/K<br />
T c = 25 °C<br />
= -187 µV/K<br />
• Electrical power generated from thermal gradient across sample<br />
• n-PbTe/PbSe NDSL: 1 mm 2 , 100 µm length, Sn/Ni/Au top and Sn bottom contact<br />
• Power density is 5-6x higher than previous best 1 100-µm-thick NDSL (G-207)<br />
• Power density is ~10x higher than TPV, ~100x higher than 1-sun solar cell<br />
1<br />
T.C. Harman et al., Appl. Phys. Lett. 88, 243504 (2006).<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Part II<br />
Lincoln Laboratory Project Overview<br />
and<br />
Link to Campus Project<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
20 Watt Generator<br />
TE vs. TPV<br />
TPV, 25% combustor efficiency<br />
TPV, 70% combustor efficiency<br />
TPV, 50% combustor efficiency<br />
LL NDSL TE<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
20W TPV and TE System Comparison<br />
TPV<br />
(high eff.)<br />
TPV<br />
(high power)<br />
TE<br />
(optimum)<br />
Hot side temperature 1200K 1200K 600K<br />
Cold side temperature 320K 350K 380K<br />
Combustor Efficiency 70% 70% 80%<br />
Converter Efficiency 20.3% 18.2% 7.6%<br />
Device area 47 cm² 52 cm² 1.2 cm²<br />
Junction power density 0.46 W/cm² 0.40 W/cm² 18 W/cm²<br />
Combustor heat flux 2.3 W/cm² 2.2 W/cm² 25 W/cm²<br />
Overall efficiency 12.3% 13.3% 5.7%<br />
Converter / Combustor mass 146 gm 164 gm 19 gm<br />
Heatsink mass 126 gm 35 gm 116 gm<br />
System mass 364 gm 289 gm 300 gm<br />
Packaging issues<br />
Vacuum, high temperature braze, parasitic<br />
heat transfer effects<br />
Junction thermal stress,<br />
high temperature<br />
stability<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Comparative System Performance<br />
500 MWe Steam Power<br />
6 month fuel<br />
• 60% mass reduction<br />
for 10 hour mission<br />
• Rechargeable<br />
• Logistics fuel<br />
5 MWe Gas Turbine<br />
6 hour fuel<br />
240 kW APU<br />
1 hour fuel<br />
Solid Oxide<br />
FC, 9 days<br />
Direct Meth<br />
FC, 3.5 days<br />
Palm Power<br />
35W JP8 Stirling<br />
3 days<br />
Air-cooled<br />
TPV, 1 day<br />
Air-cooled<br />
TE, 11 hrs<br />
Water-cooled<br />
TPV, 13 hr<br />
Water-cooled<br />
TE, 90 min<br />
DARPA WASP<br />
Zinc-Air<br />
Primary<br />
Reformed<br />
Meth FC, 9 hr<br />
Zinc-Air<br />
10hr<br />
BA-5590<br />
Li Primary<br />
BB-2590<br />
Li-ion secondary<br />
cell<br />
Zinc-Air<br />
30min<br />
Nanoparticle<br />
Li-ion cell<br />
Top Fuel Dragster<br />
w/ generator<br />
~5 sec<br />
NRL ARSENIC<br />
UGS<br />
ARMY Future<br />
Force Warrior<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
System Block Diagram<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory
Individual Junction Testing<br />
First thermo-element tested.<br />
In-situ Sn face down<br />
TE Device Junction Test Apparatus<br />
MITLL Engineering Division<br />
TE Measurement Apparatus<br />
MITLL Electrooptical <strong>Materials</strong> Group<br />
slide-<br />
GSH 3/15/2007<br />
• Extend previous material measurement work<br />
– T.C. Harman, C.J. Vineis<br />
– Thermal conductivity uncertainty<br />
• Develop device oriented measurement capability<br />
– Vacuum operation with heat flux measurement<br />
– Measure V(I,Th,Tl) and Q(I,Th,Tl)<br />
MIT Lincoln Laboratory
• Working module design<br />
completed<br />
– Thermal stress, passivation, and<br />
operational lifetime identified as<br />
critical risks<br />
– Still need insulating coating for hotside<br />
interconnects<br />
• Successfully soldered junctions<br />
to copper substrates<br />
– Soldered junctions under test:<br />
T < 200ºC so far<br />
• Moving forward with small<br />
module fabrication and testing<br />
– Substrate ordered<br />
– Fixturing design and fab proceeding<br />
Module Devleopment<br />
slide-<br />
GSH 3/15/2007<br />
MIT Lincoln Laboratory