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Déformation photoinduite dans les films minces contenant des ...

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Chapter 3. Microscopic mechanisms at the origin of the photo-induced deformation inazobenzene-containing thin <strong>films</strong> 99component, along the s direction.We conclude that the photodeformation phenomena in sol-gel Si-DR1 thin <strong>films</strong> aredependent not only on the spatial distribution of the light intensity but also on thedistribution of the field polarization. In particular, the latter governs the efficiencyand the orientation of a directional reversible matter migration process. Accordingto the field spatial distribution, this can induce matter accumulation towards thezones where the field polarization is perpendicular to the intensity gradient, or candrive matter away from the field components parallel to the intensity gradient. Theseresults are in agreement with several observations reported in the far and in the nearfield and allow to coherently interpret a certain number of unexplained phenomena.pastel-00527388, version 1 - 19 Oct 20103.5 Matter migration phenomena in PMMA-DR13.5.1 Matter migration under s- and p-polarized lightGenerally, photoinduced deformation in azo-containing materials are performed in polymermatrices like PMMA. The results reported so far show that under s-polarized interferencevery weak photoinduced deformations occur. This is consistent with ourobservations in sol-gel Si-DR1 thin <strong>films</strong> and we may interpret the weak photoinduceddeformation has being due to matrix photoexpansion. However, in a previous study [15]photoinduced matter migration has been observed under the exposure to s-polarizedinterference.We have used the techniques presented in the previous sections to study the photomechanicalphenomena in the PMMA-DR1 material <strong>des</strong>cribed in section 2.2.3. In Figure3.32 we show the photoinduced deformation obtained on a PMMA-DR1 sample180 nm thick under irradiation with an interference pattern using a very weak powerdensity, 70 µW/mm 2 per beam (blue laser, λ = 473 nm), for both s and p polarizations26 . In (a-b) we show the optical and topography images, obtained scanning overthe same line with a range of 5 µm, of the first ≃ 200 s of irradiation using s-polarizedlight. In (e-top) is plotted the average transmitted light intensity corresponding to (a)while in (e-bottom) is reported the average profile evolution corresponding to (b). Thesame is shown for p-polarized light (c-d) and (f).At t = 0, turning the laser on, we observe in both cases the growth of a weak relief(≃ 1 nm) in phase with the bright fringes of the interference pattern, which can be26 The SNOM signal of the optical image for the p polarization is very weak, which might be due tothe anistropic sensibility of the tip for s and p polarizaitions, which is exalted at low light intensitites.

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