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Documento PDF - UniCA Eprints - Università degli studi di Cagliari.

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36 polymer/semiconductor interfaceinto account by heating and equilibrating the interfaces atroom temperature.3.5 p3ht/zno interface: low deposition rateIn the regime of low deposition rate (LDR) the polymertend to organize parallel to the substrate forming s-foils [3].This has been already <strong>di</strong>scussed chapter 2 (see panel a ofFigure 3.4).The atomistic models generated during the LDR assemblingprocedure are reported in Figure 3.4.za)zb)yyc)d)zzyyFigure 3.4.: Assembling of P3HT layers on the ZnO surface.In each layer (s-foil) deposited, the polymer moleculesare aligned with the backbone parallel to rows of Zn-O<strong>di</strong>mers and the molecule-molecule inter<strong>di</strong>gitation <strong>di</strong>stanceis controlled by its matching with the lattice spacing of theZnO surface, particularly for the first layers. Given the sensitivityof the polymer crystal structure on synthesis con<strong>di</strong>tions,the above mismatch can be important in drivingthe final structure of the polymer at interface. The experimentalinter<strong>di</strong>gitation <strong>di</strong>stance in the P3HT is reportedto be 16.8 Å. Since the ZnO surface lattice parameter inthe y <strong>di</strong>rection is 5.20 Å, the best matching between thepolymer and the ZnO surface is obtained by putting onepolymer chain every three rows (inter<strong>di</strong>gitation <strong>di</strong>stanceof 15.6 Å corresponds to three times 5.20). For ideally perfectpolymer structure, the calculated inter<strong>di</strong>gitation <strong>di</strong>stancein perfect crystals is smaller than the experimentalone and it can assume two values (as already <strong>di</strong>scussed insection 2.1): 13.6 Å for high density phase and 15.8 Å forthe lower dense phase. Both experimental and high densityideal phase values gives a sizable mismatch with the ZnO

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