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Documento PDF - UniCA Eprints - Università degli studi di Cagliari.

Documento PDF - UniCA Eprints - Università degli studi di Cagliari.

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34 polymer/semiconductor interfacean energy 0.35 eV/thiophene. The interaction vanishedat <strong>di</strong>stances larger than 8 Å. By starting from the minimumenergy <strong>di</strong>stance and by further relaxing the systemwe identify the lowest energy configuration of the polymeron the surface with a bin<strong>di</strong>ng energy as large as 0.73eV/thiophene. The driving force for this bin<strong>di</strong>ng energy isdue to the attraction beween the negative carbon atoms ofthe thiophene rings of the polymer and the positive zincatoms of the surface. The P3HT polymer on the ZnO surfacepreservs the quasi-planar configuration of the isolatedmolecule.Figure 3.3.: Interaction and adhesion of a P3HT molecule on a ZnOsurface.3.4 p3ht/zno interfaceIn order to generate models of the P3HT/ZnO interfacewe consider a planar ZnO surface ideally perfect andwe put on it the organic polymer. There are three possibleways to apply boundary con<strong>di</strong>tions to the interface: (i)perio<strong>di</strong>c boundary con<strong>di</strong>tions for both ZnO and polymer;(ii) no perio<strong>di</strong>c con<strong>di</strong>tions at all, i.e. finite size cluster; (iii)mixed perio<strong>di</strong>c-non perio<strong>di</strong>c con<strong>di</strong>tions. The case (i) hasthe advantage of avoi<strong>di</strong>ng free surfaces, but it can introduceartifacts in the polymer assembling since it imposesthe same perio<strong>di</strong>city for both the polymer and the ZnO

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