NPN SILICON PLANAR TRANSISTORS BC107/A/B/C ... - Micros
NPN SILICON PLANAR TRANSISTORS BC107/A/B/C ... - Micros
NPN SILICON PLANAR TRANSISTORS BC107/A/B/C ... - Micros
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company<strong>NPN</strong> <strong>SILICON</strong> <strong>PLANAR</strong> <strong>TRANSISTORS</strong><strong>BC107</strong>/A/B/CBC108/A/B/CBC109/A/B/CTO-18Metal Can PackageLow Noise General Purpose Audio AmplifiersABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL <strong>BC107</strong> BC108 BC109 UNITCollector Emitter Voltage V CEO 45 25 25 VCollector Base Voltage V CBO 50 30 30 VEmitter Base Voltage V EBO 6.0 5.0 5.0 VCollector Current Continuous I C 200 mAPower Dissipation at T a =25ºC P D 300 mWDerate above 25ºC 1.72 mW/ ºCPower Dissipation at T c =25ºC P D 750 mWDerate above 25ºC 4.29 mW/ ºCOperating And Storage JunctionTemperature RangeT j , T stg - 65 to +200 ºCTHERMAL CHARACTERISTICSJunction to Ambient in free air R th (j-a) 583ºC/WJunction to Case R th (j-c) 233ºC/WELECTRICAL CHARACTERISTICS (T a =25ºC unless specified otherwise )DESCRIPTION SYMBOL TEST CONDITION <strong>BC107</strong> BC108 BC109 UNITCollector Emitter Voltage V CEO I C =2mA, I B= 0 >45 >25 >25 VEmitter Base Voltage V EBO I E =10µA, I C =0 >6 >5 >5 VCollector Cut Off Current I CBO V CB =45V, I E =0
<strong>NPN</strong> <strong>SILICON</strong> <strong>PLANAR</strong> <strong>TRANSISTORS</strong><strong>BC107</strong>/A/B/CBC108/A/B/CBC109/A/B/CTO-18Metal Can PackageELECTRICAL CHARACTERISTICS (T a =25ºC unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITCollector Emitter Saturation Voltage V CE (sat) I C =10mA, I B =0.5mA 0.25 VI C =100mA, I B =5mA 0.60 VBase Emitter Saturation Voltage V BE (sat) I C =10mA, I B =0.5mA 0.83 VI C =100mA, I B =5mA 1.05 VBase Emitter On Voltage V BE (on) I C =2mA, V CE =5V 0.55 0.70 VI C =10mA, V CE =5V 0.77 VCollector Knee Voltage V CE (K)I C =10mA, I B =the value for whichI C =11mA at V CE =1V0.60 VTransition frequency f T I C =10mA, V CE =5V, f=100MHz 150 MHzOutput Capacitance C obo V CB =10V, I E =0, f=1MHz 4.5 pFNoise FigureNF I C =0.2mA, V CE =5V, Rg=2KΩ,f=30Hz to 15KHz BC1094.0 dBf=1KHz, ∆F=200Hz, BC1094.0 dB<strong>BC107</strong>/108 10 dBSMALL SIGNAL CHARACTERISTICSDESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITSmall Signal Current Gain h fe I C =2mA, V CE =5V, f=1KHzInput Impedance h ie I C =2mA, V CE =5V, f=1KHz<strong>BC107</strong> 125 500BC108 125 900BC109 240 900A Group 125 260B Group 240 500C Group 450 900A Group 1.6 4.5 KΩB Group 3.2 8.5 KΩC Group 6.0 15 KΩOutput Admittance h oe I C =2mA, V CE =5V, f=1KHzA Group 30 µmhosB Group 60 µmhosC Group 110 µmhos<strong>BC107</strong>_109Rev_3 231202EContinental Device India Limited Data Sheet Page 2 of 4
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