DDR3 Synchronous Dynamic Ram 3D3D4G32YB2495 - 3D Plus

DDR3 Synchronous Dynamic RamMEMORY MODULEDDR3 SDRam 128Mx32-BGA3D3D4G32YB24954Gbit DDR3 SDRam organized as 128Mx32Pin Assignment (Top View)Main applications:BGA 136 (Pitch : 0.80 mm) Embedded Systems Workstations Servers Super Computers Test SystemsFeatures and Benefits- JEDEC-standard ball-out- Combines two 2Gb x16 devices in one package- Vdd=VddQ = +1.35V, backward compatible to1.5V operation- Differential bidirectional data strobe- 8n-bit prefetch architecture- 8 internal banks per memory- Nominal and dynamic on-die termination- Programmable CAS latency- Posted CAS additive latency- Fixed burst lengths of 8 and burst chp (BC) of 4- Selectable BC4 or BL8 on-the-fly- Self refresh mode- Write leveling- Multipurpose register- Output driver calibration- Clock rate available : 1066, 1333 and 1600 Mbps- Commercial, Industrial and Military temperaturerange.General description3D Plus offers a new 4Gbit DDR3 SDRAM cube with acompatible JEDEC standard footprint.FUNCTIONAL Block DiagramDM2DQS2, DQS2#DQ[23 :16]DM0DQS0, DQS0#DQ[7 : 0]1128Mx16ZQ0This product embeds 2 chips with a capacity of 2Gb(128Mx16) each.Our products are available at 1066, 1333 and 1600 Mbps inCommercial, Industrial and Military temperature range.Thanks to the high density patented technology thememories are embedded in a small form factor devicewithout compromising electrical or thermal performance.DM1DQS1, DQS1#DQ[15 :8]DM3DQS3, DQS3#DQ[31 : 24]2128Mx16ZQ1This device is ideal for high density memory applicationsthat require high speed transfer and compatibility withstandard servers and networking equipment.(All other signals are common to the devices)DDR3 Memory ModulePRELIMINARY3D Plus SA reserves the right to cancel product or specifications without notice3DFP-0495-REV 1 - AUGUST 2012

DDR3 Synchronous Dynamic RamMEMORY MODULEDDR3 SDRam 128Mx32-BGA3D3D4G32YB24954Gbit DDR3 SDRam organized as 128Mx32DC OPERATING CONDITIONSParameter Symbol Min Max UnitSupply Voltage V DD 1.283 1.45 VI/O Supply Voltage V DDQ 1.283 1.45 VI/O Capacitance C IO 1.5 2.1 pFInputs Capacitance C I 0.75 1.2 pFNote :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS"are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time couldaffect device reliabilityABSOLUTE MAXIMUM DC RATINGSParameter Symbol Min Max UnitVoltage on any ball relative to V SS V IN , V OUT -0.4 +1,975 VInput Leakage Current Ii -4 +4 µAVref Supply Leakage Current IVref -2 +2 µAStorage temperature T STG -55 +150 °CElectrical CharacteristicsParameter Symbol Value UnitOperating Current (one bank active) I DD1 136 mAPrecharge Power Down Current I DD2P0 28 mARoom Temp Self Refresh I DD6 24 mA3D3D4G32YB2495XTemperature RangeC = 0°C ~ +70°CI = -40°C ~ +85°CM = -55°C + 125°CMain Sales Office:FRANCE3D PLUS408, rue Hélène Boucher ZI.78532 BUC CedexTel : 33 (0)13 0 83 26 50 Fax : 33 (0)1 39 56 25 89Web : www.3d-plus.come-mail : sales@3d-plus.comDISTRIBUTORUSA3D PLUS USA, Inc6633 Eldorado ParkwaySuite 420Mckinney, TX 75070Tel : (241) 733-8505 Tel : (241) 733-8506 e-mail : sales@3d-plus.comDDR3 Memory ModulePRELIMINARY3D Plus SA reserves the right to cancel product or specifications without notice3DFP-0495-REV 1 - AUGUST 2012