Nr.2 - ALPA - Albanian Papers
Nr.2 - ALPA - Albanian Papers Nr.2 - ALPA - Albanian Papers
AKTET ISSN 2073-2244Journal of Institute Alb-Shkencawww.alb-shkenca.orgRevistë Shkencore e Institutit Alb-ShkencaCopyright © Institute Alb-ShkencaDETERMINATION OF NANOSTRUCTURES OF THIN LAYERS FROM STUDY OF QUANTALTRANSITIONSPËRCAKTIMI I NANOSTRUKTURAVE TË SHTRESAVE TË HOLLA BAZUAR NË STUDIMIN EKALIMEVE KUANTIKEJAHJA KOKAJ 1 , NEBI CAKA 2 , AGON KOKA 31Department of Physics, Kuwait University, Kuwait2University of Prishtina, Faculty of Electrical and Computer Engineering, Prishtina, Kosova3 FH Joanneum University of Applied sciences and Technology, Graz, AustriaEmail: jkokaj@yahoo.comAKTET IV, 2: 173-177, 2011PERMBLEDHJENë kuadër të këtij punimi janë studiuar nanostrukturat e një shtrese filmike të përgatitur në mënyrë eksperimentale.Janë përcaktuar vetitë strukturale dhe elektronike edhe të nanostrukturave të një gjysmëpërçuesi. Tensioni mekaniki nanostrukturave dhe kompozicioni i tyre janë përcaktuar me anë të difraksionit të rrezeve të rëntgenit. Janë maturspektrat difraksionalë të rrezeve të rëntgenit (XRD) për CdTe të elektrodepozituara mbi çelik inoks, mbi nikel dhe përCdTe në formë pluhuri. Me anë të elektroskopit elektronik me rreze depërtuese është bërë përcaktimi ikompozicionit ndërtues. Është përcaktuar koeficienti i absorbimit optik i shtresës së hollë prej CdTe, me trashësi prej0.95 μm, në funksion të energjisë fotonike. Është përcaktuar kalimi kuantik i drejtpërdrejtë për shtresën e hollë prejCdTe duke fituar vlerën 1. 51 eV.Fjalët çelës: nanostrukturat, gjysmëpërçuesi, absorbimi kuantik, shtresa e hollë..SUMMARYNanostructures on the experimentally prepared thin film layer are studied. Structural and electronic properties ofthese semiconductor nanostructures are accessed. Strain and composition are evaluated by using high-resolution x-ray diffraction technique. The X Ray Diffraction (XRD) spectra for CdTe electrodeposited on stainless steel, on nickeland for CdTe powder are measured. Transition electron microscopy techniques for composition evaluation areapplied. The optical absorption coefficient as a function of photon energy for a 0.95 μm thin CdTe film originallydeposited on stainless steel is evaluated. Direct allowed transition in a 0.23 μm thin CdTe film deposited initially onmolybdenum at −580 m is determined and the value of 1.51 eV is obtained.Key words: nanostructures, semiconductors, quantum absorption, thin films.1. INTRODUCTIONOver the last two decades, preparation of thinfilm semiconductors for use in photovoltaicdevices has become an important subject intechnology and in fundamental studies in physicsand chemistry. The electrochemical deposition isa low cost deposition method of high qualitysemiconductor thin films. However,electrodeposition has become one of the mostsuccessful methods of making high-efficiencysolar cells. The conversion efficiency of solar cellsbased on electrodeposited films of cadmiumtelluride (CdTe) exceeds 11% [1-3]. Thin films ofCdTe can be electrodeposited from acidic [1, 2, 3,4, 5], alkaline [6] and organic [7, 8] electrolytes.The pulsed-electrodeposition technique from
Kokaj et alacidic solution has also been reported recently [9,10]. Films deposited from acidic solution have, sofar, produced solar cells with higher efficiencies(16-18%). These films are n-type as deposited andhave a high resistivity of 10 4 – 10 6 Ω cm *1+.Room temperature electron and hole mobilitiesof 1100 and 80 cm 2 V -1 s -1 have been reported forgood-quality crystals. The minority carrierdiffusion lengths have been measured by theelectron-beam induced current technique to be2.5 μm and 2.8 μm for n- and p-type crystals,respectively [11].The optical absorption spectrum of CdTe shows asharp edge and large absorption coefficients(about 10 5 cm 1 for above bandgap radiation).Thus, solar radiation with energy greater than thebandgap energy is absorbed within 1-2 μm fromthe surface. When the solar cell is designed forphotogeneration of EHPs (electron-hole-pairs) totake place in the depletion region, the shortminority carrier diffusion length in polycrystallineCdTe thin films has essentially no effect on thecarrier collection. CdTe is also noted for its hightransparency in the far infrared region(absorption coefficient: 1.4 x 10 -3 cm -1 at 10.8μm).Although an extensive work has been done in thepast on electrodeposition of CdTe forphotovoltaic applications, still some of itsfundamental properties need to be explored infurther details. Some of them are addressed andstudied in this work.2. EXPERIMENTAL PROCEDURESElectrodepositon was performed in a l-literborosilicate beaker having a Teflon lid withopenings for the insertion of various electrodesand thermometer (Fig. 1). The design of thedeposition unit proved to be perfect in the sensethat deposits were quite uniform and thedeposition parameters could be controlled well.Electrodeposition was carried out cathodically ondifferent conducting substrates at a cathodepotential in the range of -550 mV to -590 mV withrespect to a saturated silver-silver chloridereference electrode (SSC). The electrolyte whichwas stirred moderately by a Teflon-coatedmagnetic bar, was a 750 ml purified solution ofIM CdSO 4 (Johnson Matthey, Alfa 20132).Fig 1. Schematic diagram for the electrodeposition apparatusThe composition of films and the preferentialorientation of grains were determined by X-raysdiffraction (XRD) using a Siemens diffractometermodel D500 (CdKa; 0.15406 nm). Scanningelectron microscopy (SEM) and energy dispersiveelectron microprobe analysis (EMA) wereperformed using a Joel (JSM-6300) microscope.The specular reflectance measurements wereperformed in the wavelength range of 0.2-3.3 μm174AKTET Vol. IV, Nr 2, 2011
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Kokaj et alacidic solution has also been reported recently [9,10]. Films deposited from acidic solution have, sofar, produced solar cells with higher efficiencies(16-18%). These films are n-type as deposited andhave a high resistivity of 10 4 – 10 6 Ω cm *1+.Room temperature electron and hole mobilitiesof 1100 and 80 cm 2 V -1 s -1 have been reported forgood-quality crystals. The minority carrierdiffusion lengths have been measured by theelectron-beam induced current technique to be2.5 μm and 2.8 μm for n- and p-type crystals,respectively [11].The optical absorption spectrum of CdTe shows asharp edge and large absorption coefficients(about 10 5 cm 1 for above bandgap radiation).Thus, solar radiation with energy greater than thebandgap energy is absorbed within 1-2 μm fromthe surface. When the solar cell is designed forphotogeneration of EHPs (electron-hole-pairs) totake place in the depletion region, the shortminority carrier diffusion length in polycrystallineCdTe thin films has essentially no effect on thecarrier collection. CdTe is also noted for its hightransparency in the far infrared region(absorption coefficient: 1.4 x 10 -3 cm -1 at 10.8μm).Although an extensive work has been done in thepast on electrodeposition of CdTe forphotovoltaic applications, still some of itsfundamental properties need to be explored infurther details. Some of them are addressed andstudied in this work.2. EXPERIMENTAL PROCEDURESElectrodepositon was performed in a l-literborosilicate beaker having a Teflon lid withopenings for the insertion of various electrodesand thermometer (Fig. 1). The design of thedeposition unit proved to be perfect in the sensethat deposits were quite uniform and thedeposition parameters could be controlled well.Electrodeposition was carried out cathodically ondifferent conducting substrates at a cathodepotential in the range of -550 mV to -590 mV withrespect to a saturated silver-silver chloridereference electrode (SSC). The electrolyte whichwas stirred moderately by a Teflon-coatedmagnetic bar, was a 750 ml purified solution ofIM CdSO 4 (Johnson Matthey, Alfa 20132).Fig 1. Schematic diagram for the electrodeposition apparatusThe composition of films and the preferentialorientation of grains were determined by X-raysdiffraction (XRD) using a Siemens diffractometermodel D500 (CdKa; 0.15406 nm). Scanningelectron microscopy (SEM) and energy dispersiveelectron microprobe analysis (EMA) wereperformed using a Joel (JSM-6300) microscope.The specular reflectance measurements wereperformed in the wavelength range of 0.2-3.3 μm174AKTET Vol. IV, Nr 2, 2011