BLF546 UHF push-pull power MOS transistor - NXP Semiconductors

DISCRETE SEMICONDUCTORSDATA SHEETM3D092BLF546UHF push-pull power MOStransistorProduct specificationSupersedes data of 1998 Jan 092003 Sep 22

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546FEATURES• High power gain• Easy power control• Good thermal stability• Gold metallization ensuresexcellent reliability• Designed for broadband operation.DESCRIPTIONSilicon N-channel enhancementmode vertical D-MOS push-pulltransistor designed forcommunications transmitterapplications in the UHF frequencyrange.The transistor is encapsulated in a4-lead, SOT268A balanced flangepackage, with two ceramic caps. Themounting flange provides thecommon source connection for thetransistors.PINNING - SOT268APIN DESCRIPTION1 drain 12 gate 13 gate 24 drain 25 sourcePIN CONFIGURATIONhandbook, halfpage 12Top viewFig.1 Simplified outline and symbol.CAUTIONThis product is supplied in anti-static packing to prevent damage caused byelectrostatic discharge during transport and handling. For further information,refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.WARNINGProduct and environmental safety - toxic materials435MAM395This product contains beryllium oxide. The product is entirely safe providedthat the BeO discs are not damaged. All persons who handle, use or disposeof this product should be aware of its nature and of the necessary safetyprecautions. After use, dispose of as chemical or special waste according tothe regulations applying at the location of the user. It must never be thrownout with the general or domestic waste.ggdsdQUICK REFERENCE DATARF performance at T h =25°C in a push-pull common source test circuit.MODE OF OPERATIONf(MHz)CW, class-B 500 28 80 >11 >50V DS(V)P L(W)G p(dB)η D(%)2003 Sep 22 2

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITPer transistor section (unless otherwise specified)V DS drain-source voltage − 65 VV GS gate-source voltage − ±20 VI D drain current (DC) − 9 AP tot total power dissipation T mb ≤ 25 °C; total device;− 145 Wboth sections equally loadedT stg storage temperature −65 150 °CT j junction temperature − 200 °CTHERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th j-mbR th mb-hthermal resistance from junction tomounting basethermal resistance from mountingbase to heatsinktotal device;both sections equally loadedtotal device;both sections equally loaded1.2 K/W0.25 K/Whandbook, halfpageI D(A)MRA995200handbook, halfpageP tot(W)160MDA51910 2 (1)10(2)120(2)(1)804011 10V DS (V)10 20040 80120T h (°C) 160(1) Current in this area may be limited by R DSon .(2) T mb =25°C.Total device; both sections equally loaded.Fig.2 DC SOAR.(1) Continuous operation.(2) Short-time operation during mismatch.Total device; both sections equally loaded.Fig.3 Power derating curves.2003 Sep 22 3

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546CHARACTERISTICST j =25°C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITPer sectionV (BR)DSS drain-source breakdown voltage V GS = 0; I D = 20 mA 65 − − VI DSS drain-source leakage current V GS = 0; V DS = 28 V − − 2 mAI GSS gate-source leakage current V GS = ±20 V; V DS =0 − − 1 µAV GSth gate-source threshold voltage I D = 80 mA; V DS = 10 V 1 − 4 Vg fs forward transconductance I D = 2.4 A; V DS = 10 V 1.2 1.7 − SR DSon drain-source on-state resistance I D = 2.4 A; V GS = 10 V − 0.4 0.6 ΩI DSX on-state drain current V GS = 15 V; V DS = 10 V − 10 − AC is input capacitance V GS = 0; V DS = 28 V; f = 1 MHz − 60 − pFC os output capacitance V GS = 0; V DS = 28 V; f = 1 MHz − 46 − pFC rs feedback capacitance V GS = 0; V DS = 28 V; f = 1 MHz − 15 − pFV GS group indicatorGROUPLIMITS(V)GROUPLIMITS(V)MIN. MAX. MIN. MAX.A 2.0 2.1 O 3.3 3.4B 2.1 2.2 P 3.4 3.5C 2.2 2.3 Q 3.5 3.6D 2.3 2.4 R 3.6 3.7E 2.4 2.5 S 3.7 3.8F 2.5 2.6 T 3.8 3.9G 2.6 2.7 U 3.9 4.0H 2.7 2.8 V 4.0 4.1J 2.8 2.9 W 4.1 4.2K 2.9 3.0 X 4.2 4.3L 3.0 3.1 Y 4.3 4.4M 3.1 3.2 Z 4.4 4.5N 3.2 3.32003 Sep 22 4

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF54612handbook, halfpageT.C.(mV/K)8MDA52012handbook, halfpageI D(A)MDA5218404−41 10I D (A)00410 −2 10 −1 Fig.5 Drain current as a function of gate-source8 12 16V GS (V)V DS =10V.Fig.4Temperature coefficient of gate-sourcevoltage as a function of drain current; typicalvalues per section.V DS = 10 V; T j =25°C.voltage; typical values per section.0.8handbook, halfpageR DSon(Ω)0.6MDA522250handbook, halfpageC(pF)200MDA5231500.41000.250C isC os00 40 80 120 160T j (°C)01 1020 30 40V DS (V)I D = 2.4 A; V GS =10V.V GS = 0; f = 1 MHz.Fig.6Drain-source on-state resistance as afunction of junction temperature; typicalvalues per section.Fig.7Input and output capacitance as functionsof drain-source voltage; typical values persection.2003 Sep 22 5

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF54680handbook, halfpageC rs(pF)MDA52460402000 10 2030 40V DS (V)V GS = 0; f = 1 MHz.Fig.8Feedback capacitance as a function ofdrain-source voltage; typical values persection.APPLICATION INFORMATION FOR CLASS-B OPERATIONT h =25°C; R th mb-h = 0.25 K/W, unless otherwise specified.RF performance in a common source, class-B, push-pull circuit.MODE OF OPERATIONf(MHz)V DS(V)I DQ(mA)P L(W)G p(dB)CW, class-B 500 28 2 × 80 80 >11typ. 13η D(%)>50typ. 60Ruggedness in class-B operationThe BLF546 is capable of withstanding a full load mismatch corresponding to VSWR = 10 through all phases under thefollowing conditions: V DS = 28 V; f = 500 MHz at rated output power.2003 Sep 22 6

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF54625handbook, halfpageG p(dB)20G pMDA525100η C(%)80120handbook, halfpageP L(W)MDA52680156010η C4040520040 60 801000P L (W) 1200048 12 16P IN (W)Class-B operation; V DS = 28 V; I DQ =2×80 mA;Z L = 2.3 + j2.7 Ω(per section); f = 500 MHz.Class-B operation; V DS = 28 V; I DQ =2×80 mA;Z L = 2.3 + j2.7 Ω(per section); f = 500 MHz.Fig.9Power gain and efficiency as functions ofload power; typical values.Fig.10 Load power as a function of input power;typical values.2003 Sep 22 7

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546handbook, full pagewidthC12+V DC13V BIASR1R2C8R7L20C7C14R3L1 C1 L4 L6 L8 L10 L12,,,,,,,,D.U.T.L16L14 L18 L22 L24 L26,,,,,, C23,,50 ΩinputL2C3 C4 C5 C6 C9C1,,,,,,,,L3L5 L7 L9 L11 L13R4C10C11BLF546L27C18 C19 C20 C21 C22C24,,,,,,,,L15 L19 L23 L25 L28L17C1550 ΩoutputR8L21V BIASR5R6C17C16MDA530f = 500 MHz.+V DFig.11 Test circuit for class-B operation.List of components (see Fig.11)COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.C1, C2 multilayer ceramic chip capacitor; 33 pF, 500 Vnote 1C3multilayer ceramic chip capacitor; 11 pF, 500 Vnote 1C4, C6, C21, C22 film dielectric trimmer 2 to 9 pF 2222 809 09005C5multilayer ceramic chip capacitor; 12 pF, 500 Vnote 2C7, C10, C14, C15 multilayer ceramic chip capacitor; 390 pF, 500 Vnote 1C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104C9multilayer ceramic chip capacitor; 39 pF, 500 Vnote 2C13, C16 electrolytic capacitor 4.7 µF, 63 V 2222 030 384782003 Sep 22 8

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.C18, C19 multilayer ceramic chip capacitor; 18 pF, 500 Vnote 2C20multilayer ceramic chip capacitor; 15 pF, 500 Vnote 2C23, C24 multilayer ceramic chip capacitor; 15 pF, 500 Vnote 1L1, L3, L26, L28 stripline; note 3 50 Ω 55.6 × 2.4 mmL2 semi-rigid cable; note 4 50 Ω ext. dia. 2 mmext. conductorlength 55.6 mmL4, L5 stripline; note 3 42 Ω 12 × 3mmL6, L7 stripline; note 3 42 Ω 26.5 × 3mmL8, L9 stripline; note 3 42 Ω 5.5 × 3mmL10, L11 stripline; note 3 42 Ω 6 × 3mmL12, L13 stripline; note 3 42 Ω 3 × 3 mmL14, L15 stripline; note 3 42 Ω 7 × 3 mmL16, L17 3 turns enamelled 1 mm copper wire 15.6 nH length 8.5 mmint. dia. 5.4 mmleads 2 × 5mmL18, L19 stripline; note 3 42 Ω 12 × 3mmL20, L21 grade 3B Ferroxcube RF choke 4312 020 36642L22, L23 stripline; note 3 42 Ω 20 × 3mmL24, L25 stripline; note 3 42 Ω 14 × 3mmL27 semi-rigid cable; note 5 50 Ω ext. dia. 2 mmext. conductorlength 55.6 mmR1, R5 0.4 W metal film resistor 11.5 kΩ 2322 151 71153R2, R6 10 turns cermet potentiometer 50 kΩR3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003R7, R8 1 W metal film resistor 10 Ω 2322 153 51009Notes1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε r = 2.2);thickness 1 ⁄ 32 inch.4. Semi-rigid cable L2 is soldered on to stripline L3.5. Semi-rigid cable L27 is soldered on to stripline L28.2003 Sep 22 9

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546200handbook, full pagewidthstrapsstraps85V DR2C12C13L2L3C7 C8C14L20R7L27L28C1L4 L6C3 C4 C5L5 L7C2R3L8 L10L12 L14C6 C9 C18L13 L15L9 L11R4L16C20L18C19L19C21L17L22L23C23L24L25C22 C24L1C10 C11C15R8L26L21R6C17V DC16MDA518Dimensions in mm.The circuit and components are situated on one side of the printed circuit board, the other side being fullymetallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivetsfor a direct contact between upper and lower sheets.Fig.12 Component layout for 500 MHz test circuit.2003 Sep 22 10

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF5462handbook, halfpageZ i(Ω)0r iMDA52710handbook, halfpageZ L(Ω)8MDA528−80 200x i400 600−26R L−44X L−62f (MHz)00 200400 600f (MHz)Class-B operation; V DS = 28 V; I DQ =2×80 mA; P L =80W.Fig.13 Input impedance as a function of frequency(series components); typical values persection.Class-B operation; V DS = 28 V; I DQ =2×80 mA; P L =80W.Fig.14 Load impedance as a function of frequency(series components); typical values persection.30handbook, halfpageMDA529G p(dB)201000200400 600f (MHz)Class-B operation; V DS = 28 V; I DQ =2×80 mA; P L =80W.Fig.15 Power gain as a function of frequency;typical values per section.2003 Sep 22 11

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546PACKAGE OUTLINEFlanged double-ended ceramic package; 2 mounting holes; 4 leadsSOT268ADA5FU 1BqCH 1MC Mc14HU 2PEw 2w 1 A BM M MA23bw 3 MQe0 5 10 mmscaleDIMENSIONS (millimetre dimensions are derived from the original inch dimensions)UNITAbDeFHH 1pQq U 1w 1 w 2w 3mm4.914.191.661.390.130.0712.9612.446.486.226.452.041.7717.0216.008.237.723.433.172.672.4118.4224.9024.636.616.35c E U 20.250.25 0.51inches0.1930.1650.0650.0550.0050.0030.5100.4900.2550.2450.2540.0800.0700.6700.6300.3240.3040.1350.1250.1050.0950.7250.9800.9700.2600.2500.010 0.0200.010OUTLINEVERSIONREFERENCESIEC JEDEC EIAJEUROPEANPROJECTIONISSUE DATESOT268A99-03-292003 Sep 22 12

Philips SemiconductorsUHF push-pull power MOS transistorProduct specificationBLF546DATA SHEET STATUSLEVELDATA SHEETSTATUS (1)PRODUCTSTATUS (2)(3)DEFINITIONI Objective data Development This data sheet contains data from the objective specification for productdevelopment. Philips Semiconductors reserves the right to change thespecification in any manner without notice.II Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct.III Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time in orderto improve the design, manufacturing and supply. Relevant changes willbe communicated via a Customer Product/Process Change Notification(CPCN).Notes1. Please consult the most recently issued data sheet before initiating or completing a design.2. The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.DEFINITIONSShort-form specification ⎯ The data in a short-formspecification is extracted from a full data sheet with thesame type number and title. For detailed information seethe relevant data sheet or data handbook.Limiting values definition ⎯ Limiting values given are inaccordance with the Absolute Maximum Rating System(IEC 60134). Stress above one or more of the limitingvalues may cause permanent damage to the device.These are stress ratings only and operation of the deviceat these or at any other conditions above those given in theCharacteristics sections of the specification is not implied.Exposure to limiting values for extended periods mayaffect device reliability.Application information ⎯ Applications that aredescribed herein for any of these products are forillustrative purposes only. Philips Semiconductors makeno representation or warranty that such applications will besuitable for the specified use without further testing ormodification.DISCLAIMERSLife support applications ⎯ These products are notdesigned for use in life support appliances, devices, orsystems where malfunction of these products canreasonably be expected to result in personal injury. PhilipsSemiconductors customers using or selling these productsfor use in such applications do so at their own risk andagree to fully indemnify Philips Semiconductors for anydamages resulting from such application.Right to make changes ⎯ Philips Semiconductorsreserves the right to make changes in the products -including circuits, standard cells, and/or software -described or contained herein in order to improve designand/or performance. When the product is in full production(status ‘Production’), relevant changes will becommunicated via a Customer Product/Process ChangeNotification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of theseproducts, conveys no licence or title under any patent,copyright, or mask work right to these products, andmakes no representations or warranties that theseproducts are free from patent, copyright, or mask workright infringement, unless otherwise specified.2003 Sep 22 13

Philips Semiconductors – a worldwide companyContact informationFor additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.© Koninklijke Philips Electronics N.V. 2003 SCA75All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.Printed in The Netherlands 613524/03/pp14 Date of release: 2003 Sep 22 Document order number: 9397 750 11591