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Power Grid Analysis in VLSI Designs - SERC

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Most popular technique to control this IR drop is to <strong>in</strong>sert decoupl<strong>in</strong>g capacitors <strong>in</strong> the design.Figure 4.2 shows electrical representation of <strong>in</strong>ductance and dynamic switch<strong>in</strong>g of cell thatcauses <strong>Power</strong> supply noise and decoupl<strong>in</strong>g capacitors that helps <strong>in</strong> meet<strong>in</strong>g this <strong>in</strong>stantaneousneed.V ddV ssL pdV dd P<strong>in</strong>C pdRpdI ddR ndL V ss P<strong>in</strong>ps R ps C psI ssV dd NetC ndV ss NetCellC decapR nsC nsFigure 4.2 Schematic circuit for <strong>in</strong>stantaneous voltage drop analysisThis work focuses on comput<strong>in</strong>g <strong>in</strong>stantaneous IR drop (deltaV) or actual voltage (Vdd-deltaV)at Cell’s <strong>Power</strong>/Ground ports. Vdd is ideal voltage source here and constant over time. Herealso our approach is focused on cell based designs. Next section expla<strong>in</strong>s the cellcharacterization and model<strong>in</strong>g needed for block level analysis. Us<strong>in</strong>g this characterization, webuild a power grid network that can be simulated. This is discussed <strong>in</strong> section 5.3. Section 5.4expla<strong>in</strong>s the prototype flow we developed and chapter ends with validation results andconclusion.4.2 Cell CharacterizationDef<strong>in</strong>ition: Cell characterization is a process through which data is prepared forevery cell for usage <strong>in</strong> the design.Process <strong>in</strong>volves SPICEcharacterization as well as post process<strong>in</strong>g of data. The process needs64

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