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Power Grid Analysis in VLSI Designs - SERC

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circuit nodes and propagates the same. It is known fact that power compiler cannot estimategood switch<strong>in</strong>g activity for sequential cells. It should be also noted that most ASIC vendorshave cell power model<strong>in</strong>g based on Synopsys Liberty syntax so it is highly important to haves<strong>in</strong>gle cell power estimation close to <strong>Power</strong> Compiler number. Synopsys Reference Manual on<strong>Power</strong> Compiler [18] gives basic power calculation theory and description of terms be<strong>in</strong>g used<strong>in</strong> its tools.We used power compiler <strong>in</strong> two modes.One mode was to use power compiler as complete solution for power estimation. In thisapproach, we generated <strong>in</strong>put switch<strong>in</strong>g activity from our vectors and specified topower compiler. <strong>Power</strong> compiler propagated the switch<strong>in</strong>g activity based on switch<strong>in</strong>gprobability. It then calculates power. In this method, it used some assignment methodfor sequential cells and we went ahead with that because our aim was to verify defaultswitch<strong>in</strong>g activity propagation algorithm of <strong>Power</strong> Compiler.Second mode was to use power compiler just as power calculation eng<strong>in</strong>e. In thisapproach, we generated switch<strong>in</strong>g activity at all the nodes by us<strong>in</strong>g methodologydef<strong>in</strong>ed <strong>in</strong> Chapter 3 and used the power calculation eng<strong>in</strong>e. As mentioned earlier,power calculation eng<strong>in</strong>e is quite accurate and so based on power estimation; our aimwas to evaluate switch<strong>in</strong>g activity determ<strong>in</strong>ation accuracy of other methods.3.3.2 <strong>Power</strong> Mill (or Nano Sim) [4][68]<strong>Power</strong> Mill is Synopsys tool (currently known as Nano Sim) with fast SPICE eng<strong>in</strong>e at core. Ithas been identified as nicely correlat<strong>in</strong>g for two of the s<strong>in</strong>gle cell circuits and one small design46

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