Power Grid Analysis in VLSI Designs - SERC
Power Grid Analysis in VLSI Designs - SERC
Power Grid Analysis in VLSI Designs - SERC
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3.2 Current approaches to <strong>Power</strong> <strong>Analysis</strong>Cell based power estimation consists of cell characterization and logic simulation or activityestimation. The characterization phase entails a set of electrical simulations of each library cellfor all possible <strong>in</strong>put transitions and for a wide range of fan<strong>in</strong> and fanout conditions. Tim<strong>in</strong>gand power <strong>in</strong>formation obta<strong>in</strong>ed <strong>in</strong> this way is used to construct lookup tables for the basiclibrary elements [46][69].Summ<strong>in</strong>g the leakage power of the design’s constituent library cells derives the total leakagepower of a circuit:P leakageTotal = ∑∀ Cell (i)PCellLeaka ge(i) (3)Where P cellLeakage(I) is the leakage power dissipation of each cell. Technology library developersannotate the library cells with the approximate total leakage power dissipated by each cell.There is usually a s<strong>in</strong>gle static power number per library cell but sometimes leakage power candepend on the logical condition of the cell. In this case, the library cell is annotated with a statedependent static power.A cell’s <strong>in</strong>ternal power is the sum of the <strong>in</strong>ternal power of all of the cell’s <strong>in</strong>puts and outputs asmodeled <strong>in</strong> the technology library:∑P = Ei * A(i) * f ( i)(4)Internal∀P<strong>in</strong>(i)Where Ei is the <strong>in</strong>ternal energy of each p<strong>in</strong>. In practice, the <strong>in</strong>ternal energy if a p<strong>in</strong> ischaracterized <strong>in</strong> the technology library and can be accessed by simple table look-up. Depend<strong>in</strong>g42