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Power Grid Analysis in VLSI Designs - SERC

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Figure 1.6 Total power break up <strong>in</strong>to leakage and activeLeakage power control and power network <strong>in</strong>tegrity have become one of the key area of<strong>in</strong>terest for today’s power sensitive designs. In comments on <strong>Power</strong> Consumption Problem atthe 2002 International Electron Devices Meet<strong>in</strong>g, Intel chairman Andrew Grove cited off-statecurrent leakage <strong>in</strong> particular as a limit<strong>in</strong>g factor <strong>in</strong> future microprocessor <strong>in</strong>tegration. [72]Designers have been com<strong>in</strong>g out <strong>in</strong>novative way to reduce leakage power us<strong>in</strong>g varioustechniques – reduc<strong>in</strong>g device power supply and frequency of operation [73], Multi-Vt transistorusage [74-79], controll<strong>in</strong>g <strong>in</strong>put states [74], memory leakage reduction [75], us<strong>in</strong>g reverse bodybias [76], and us<strong>in</strong>g transistor stack [77]. A detailed study on sources of leakage power andreduction techniques can be found <strong>in</strong> [82].Several techniques are available to reduce the leakage – gated power supply us<strong>in</strong>g powerswitches is one of the most promis<strong>in</strong>g techniques. <strong>Power</strong> switches consist of several PMOS23

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